NCL30088
Power Factor Corrected
Quasi-Resonant Primary
Side Current-Mode
Controller for LED Lighting
with Thermal Foldback
www.onsemi.com
The NCL30088 is a power factor corrected flyback controller
targeting isolated and non−isolated constant current LED drivers. The
controller operates in a quasi−resonant mode to provide optimal
efficiency. Thanks to a novel control method, the device is able to
tightly regulate a constant LED current from the primary side. This
removes the need for secondary side feedback circuitry, biasing and an
optocoupler.
The device is highly integrated with a minimum number of external
components. A robust suite of safety protection is built in to simplify
the design. This device is specifically intended for very compact,
space efficient designs.
Features
•
•
•
•
•
•
•
•
•
•
•
Quasi−resonant Peak Current−mode Control Operation
Constant Current Control with Primary Side Feedback
Tight LED Constant Current Regulation of ±2% Typical
Power Factor Correction
Line Feedforward for Enhanced Regulation Accuracy
Low Start−up Current (13 mA typ.)
Wide Vcc Range
300 mA / 500 mA Totem Pole Driver with 12 V Gate Clamp
Robust Protection Features
♦ OVP on VCC
♦ Programmable Over Voltage / LED Open Circuit Protection
♦ Cycle−by−cycle Peak Current Limit
♦ Winding Short Circuit Protection
♦ Secondary Diode Short Protection
♦ Output Short Circuit Protection
♦ Shorted Current Sense Protection
♦ User Programmable NTC Based Thermal Foldback
♦ Thermal Shutdown
♦ Vcc Undervoltage Lockout
♦ Brown−out Protection
Pb−Free, Halide−Free Product
Four Versions: NCL30088A, B, C and D (See Table 1)
8
1
SOIC−8 NB
CASE 751
MARKING DIAGRAM
8
L30088x
ALYW
G
1
L30088x = Specific Device Code
x = A, B, C, D
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb-Free Package
PIN CONNECTIONS
1
ZCD
VCC
VS
DRV
COMP
GND
CS
SD
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 25 of this data sheet.
Typical Applications
•
•
•
•
Integral LED Bulbs and Tubes
LED Light Engines
LED Drivers/Power Supplies
Electronic Control Gear for LED Lighting
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 4
1
Publication Order Number:
NCL30088/D
NCL30088
.
Aux
.
.
NCL30088
1
8
2
7
3
6
4
5
Rsense
Figure 1. Typical Application Schematic in a Flyback Converter
Aux
.
.
NCL30088
1
8
2
7
3
6
4
5
Rsense
Figure 2. Typical Application Schematic in a Buck−Boost Converter
www.onsemi.com
2
NCL30088
Table 1. FOUR NCL30088 VERSIONS
Part Number
Protection Mode
Current Regulation
Reference Voltage
(VREF)
Recommended for (*):
Isolated converters.
Non−isolated converters with
NCL30088A
Latching−off
250 mV
V out v Ǹ2 @ (V in,rms) LL
Isolated converters.
Non−isolated converters with
NCL30088B
Auto−recovery
250 mV
V out v Ǹ2 @ (V in,rms) LL
Non−isolated converters with
NCL30088C
Latching−off
200 mV
V out u Ǹ2 @ (V in,rms) LL
Non−isolated converters with
NCL30088D
Auto−recovery
200 mV
V out u Ǹ2 @ (V in,rms) LL
*(Vin,rms)LL designates the lowest line rms voltage. Refer to AND9200/D for more details.
(http://www.onsemi.com/pub_link/Collateral/AND9200−D.PDF).
Table 2. PIN FUNCTION DESCRIPTION
Pin No.
Pin Name
Function
Pin Description
1
ZCD
Zero Crossing Detection
2
VS
Input Voltage Sensing
3
COMP
Filtering Capacitor
This pin receives a filtering capacitor for power factor correction. Typical values
ranges from 1 − 4.70 mF
4
SD
Thermal Foldback and
Shutdown
Connecting an NTC to this pin allows the user to program thermal current foldback threshold and slope. A Zener diode can also be used to pull−up the pin
and stop the controller for adjustable OVP protection.
5
CS
Current Sense
6
GND
−
7
DRV
Driver Output
The driver’s output to an external MOSFET
8
VCC
IC Supply Pin
This pin is the positive supply of the IC. The circuit starts to operate when VCC
exceeds 18 V and turns off when VCC goes below 8.8 V (typical values). After
start−up, the operating range is 9.4 V up to 25.5 V (VCC (OVP ) minimum level).
Connected to the auxiliary winding, this pin detects the core reset event.
This pin observes the input voltage rail and protects the LED driver in case of
too low mains conditions (brown−out).
This pin also observes the input voltage rail for:
− Power Factor Correction
− Valley lockout
This pin monitors the primary peak current.
Controller ground pin.
www.onsemi.com
3
NCL30088
Internal Circuit Architecture
Enable
Over Voltage Protection
(Auto−recovery or Latched)
Aux_SCP
Thermal
Foldback
VCC
VCC Management
Latch
Internal
Thermal
Shutdown
V TF
V REF
OFF
UVLO
Fault
Management
Over Temp. Protection
(Auto−recovery or Latched)
SD
V DD
STOP
VCC_max
VCC Over Voltage
Protection
WOD_SCP
BO_NOK
DRV
FF_mode
V VS
V REF
VCC
FF_mode
ZCD
Zero Crossing Detection Logic
(ZCD Blanking, Time−Out, ...)
Clamp
Circuit
Valley Selection
Frequency Foldback
Aux. Winding Short Circuit Prot.
Aux_SCP
DRV
S
VTF
V VS
Q
CS_ok
Q
R
Line
feed−forward
VVS
STOP
VREF
VTF
CS
Power Factor and
Constant−Current
Control
Leading
Edge
Blanking
CS_reset
Ipkmax
Max. Peak
Current
Limit
Ipkmax
CS Short
Protection
CS_ok
Maximum
on time
STOP
t on,max
COMP
VVS
VS
BO_NOK
Brown−Out
UVLO
t on,max
Winding and
Output diode
Short Circuit
Protection
WOD_SCP
GND
Figure 3. Internal Circuit Architecture
www.onsemi.com
4
NCL30088
Table 3. MAXIMUM RATINGS TABLE
Symbol
Rating
Value
Unit
VCC(MAX)
ICC(MAX)
Maximum Power Supply voltage, VCC pin, continuous voltage
Maximum current for VCC pin
−0.3 to 30
Internally limited
V
mA
VDRV(MAX)
IDRV(MAX)
Maximum driver pin voltage, DRV pin, continuous voltage
Maximum current for DRV pin
−0.3, VDRV (Note 1)
−300, +500
V
mA
VMAX
IMAX
Maximum voltage on low power pins (except DRV and VCC pins)
Current range for low power pins (except DRV and VCC pins)
−0.3, 5.5 (Notes 2 and 5)
−2, +5
V
mA
RθJ−A
Thermal Resistance Junction−to−Air
180
°C/W
TJ(MAX)
Maximum Junction Temperature
150
°C
Operating Temperature Range
−40 to +125
°C
Storage Temperature Range
−60 to +150
°C
ESD Capability, HBM model (Note 3)
3.5
kV
ESD Capability, MM model (Note 3)
250
V
ESD Capability, CDM model (Note 3)
2
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. VDRV is the DRV clamp voltage VDRV(high) when VCC is higher than VDRV(high). VDRV is VCC otherwise.
2. This level is low enough to guarantee not to exceed the internal ESD diode and 5.5−V Zener diode. More positive and negative voltages can
be applied if the pin current stays within the −2−mA / 5−mA range.
3. This device contains ESD protection and exceeds the following tests: Human Body Model 3500 V per JEDEC Standard JESD22−A114E,
Machine Model Method 250 V per JEDEC Standard JESD22−A115B, Charged Device Model 2000 V per JEDEC Standard JESD22−C101E.
4. This device contains latch−up protection and has been tested per JEDEC Standard JESD78D, Class I and exceeds ±100 mA
5. Recommended maximum VS voltage for optimal operation is 4 V. −0.3 V to +4.0 V is hence, the VS pin recommended range.
Table 4. ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25°C, VCC = 12 V, VZCD = 0 V,
VCS = 0 V, VSD = 1.5 V) For min/max values TJ = −40°C to +125°C, VCC = 12 V)
Description
Test Condition
Symbol
Min
Typ
Max
Unit
VCC rising
VCC rising
VCC falling
VCC(on)
VCC(off)
VCC(HYS)
VCC(reset)
16.0
8.2
8
4
18.0
8.8
−
5
20.0
9.4
−
6
VCC Over Voltage Protection Threshold
VCC(OVP)
25.5
26.8
28.5
V
VCC(off) noise filter
VCC(reset) noise filter
tVCC(off)
tVCC(reset)
−
−
5
20
−
−
ms
ICC(start)
−
13
30
mA
58
75
mA
STARTUP AND SUPPLY CIRCUITS
Supply Voltage
Startup Threshold
Minimum Operating Voltage
Hysteresis VCC(on) – VCC(off)
Internal logic reset
V
Startup current
Startup current in fault mode
Supply Current
Device Disabled/Fault
Device Enabled/No output load on pin 7
Device Switching (FSW = 65 kHz)
ICC(sFault)
mA
VCC > VCC(off)
Fsw = 65 kHz
CDRV = 470 pF, Fsw = 65 kHz
ICC1
ICC2
ICC3
0.8
–
−
1.0
2.6
3.0
1.2
4.0
4.5
Maximum Internal current limit
VILIM
0.95
1.00
1.05
V
Leading Edge Blanking Duration for VILIM
tLEB
240
300
360
ns
CURRENT SENSE
6. Guaranteed by Design
7. A NTC is generally placed between the SD and GND pins. Parameters RTF(start), RTF(stop), ROTP(off) and ROTP(on) give the resistance the
NTC must exhibit to respectively, enter thermal foldback, stop thermal foldback, trigger the OTP limit and allow the circuit recovery after
an OTP situation.
8. At startup, when VCC reaches VCC(on), the controller blanks OTP for more than 250 ms to avoid detecting an OTP fault by allowing the
SD pin voltage to reach its nominal value if a filtering capacitor is connected to the SD pin.
www.onsemi.com
5
NCL30088
Table 4. ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25°C, VCC = 12 V, VZCD = 0 V,
VCS = 0 V, VSD = 1.5 V) For min/max values TJ = −40°C to +125°C, VCC = 12 V)
Description
Test Condition
Symbol
Min
Typ
Max
Unit
tILIM
−
100
150
ns
CURRENT SENSE
Propagation delay from current detection to gate
off−state
Maximum on−time
ton(MAX)
26
36
46
ms
Threshold for immediate fault protection activation
VCS(stop)
1.35
1.50
1.65
V
Leading Edge Blanking Duration for VCS(stop)
tBCS
−
150
−
ns
Current source for CS to GND short detection
ICS(short)
400
500
600
mA
VCS(low)
30
65
100
mV
Drive Resistance
DRV Sink
DRV Source
RSNK
RSRC
−
−
13
30
−
−
Drive current capability
DRV Sink (Note 6)
DRV Source (Note 6)
ISNK
ISRC
−
−
500
300
−
−
Current sense threshold for CS to GND short detection
VCS rising
GATE DRIVE
W
mA
Rise Time (10% to 90%)
CDRV = 470 pF
tr
–
40
−
ns
Fall Time (90% to 10%)
CDRV = 470 pF
tf
–
30
−
ns
DRV Low Voltage
VCC = VCC(off)+0.2 V
CDRV = 470 pF, RDRV=33 kW
VDRV(low)
8
–
−
V
DRV High Voltage
VCC = VCC(MAX)
CDRV = 470 pF, RDRV=33 kW
VDRV(high)
10
12
14
V
Upper ZCD threshold voltage
VZCD rising
VZCD(rising)
−
90
150
mV
Lower ZCD threshold voltage
VZCD falling
VZCD(falling)
35
55
−
mV
VZCD(HYS)
15
−
−
mV
TDEM
−
100
300
ns
TZCD(blank1)
1.12
1.50
1.88
ms
TTIMO
5.0
6.5
8.0
ms
VZCD = VZCD(falling)
RZCD(PD)
−
200
−
kW
Reference Voltage at TJ = 25°C
A and B versions
C and D versions
VREF
245
195
250
200
255
205
mV
Reference Voltage TJ = 25°C to 100°C
A and B versions
C and D versions
VREF
242.5
192.5
250.0
200.0
257.5
207.5
mV
Reference Voltage TJ = −40°C to 125°C
A and B versions
C and D versions
VREF
240
190
250
200
260
210
mV
VCS falling
VCS(low)
20
55
100
mV
Vratio
−
4
−
−
40
50
60
mS
ZERO VOLTAGE DETECTION CIRCUIT
ZCD hysteresis
Propagation Delay from valley detection to DRV high
VZCD falling
Blanking delay after on−time
Timeout after last DEMAG transition
Pulling−down resistor
CONSTANT CURRENT AND POWER FACTOR CONTROL
Current sense lower threshold
Vcontrol to current setpoint division ratio
Error amplifier gain
VREFX=VREF
GEA
Error amplifier current capability
VREFX=VREF
IEA
±60
mA
6. Guaranteed by Design
7. A NTC is generally placed between the SD and GND pins. Parameters RTF(start), RTF(stop), ROTP(off) and ROTP(on) give the resistance the
NTC must exhibit to respectively, enter thermal foldback, stop thermal foldback, trigger the OTP limit and allow the circuit recovery after
an OTP situation.
8. At startup, when VCC reaches VCC(on), the controller blanks OTP for more than 250 ms to avoid detecting an OTP fault by allowing the
SD pin voltage to reach its nominal value if a filtering capacitor is connected to the SD pin.
www.onsemi.com
6
NCL30088
Table 4. ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25°C, VCC = 12 V, VZCD = 0 V,
VCS = 0 V, VSD = 1.5 V) For min/max values TJ = −40°C to +125°C, VCC = 12 V)
Description
Test Condition
Symbol
COMP pin grounded
IEA_STUP
Min
Typ
Max
Unit
CONSTANT CURRENT AND POWER FACTOR CONTROL
COMP Pin Start−up Current Source
mA
140
LINE FEED FORWARD
KLFF
18
20
22
mS
DRV high, VVS = 2 V
IFF
35
40
45
mA
VVS > 5 V
Ioffset(MAX)
80
100
120
mA
Threshold for high− line range (HL) detection
VVS rising
VHL
2.28
2.40
2.52
V
Threshold for low−line range (LL) detection
VVS falling
VLL
2.18
2.30
2.42
V
tHL(blank)
15
25
35
ms
TSHDN
130
150
170
_C
VVS to ICS(offset) conversion ratio
Line feed−forward current on CS pin
Offset current maximum value
VALLEY LOCKOUT SECTION
Blanking time for line range detection
FAULT PROTECTION
Thermal Shutdown (Note 6)
FSW = 65 kHz
Thermal Shutdown Hysteresis
TSHDN(HYS)
−
50
–
_C
Threshold voltage for output short circuit or
auxiliary winding short circuit detection
VZCD(short)
0.8
1.0
1.2
V
Short circuit detection Timer
tOVLD
70
90
110
ms
Auto−recovery timer duration
trecovery
3
4
5
s
SD pin Clamp series resistor
RSD(clamp)
Clamped voltage
VZCD < VZCD(short)
1.6
kW
SD pin open
VSD(clamp)
1.13
1.35
1.57
V
VSD rising
VOVP
2.35
2.50
2.65
V
Delay before OVP or OTP confirmation (OVP and
OTP)
TSD(delay)
22.5
30.0
37.5
ms
Reference current for direct connection of an NTC
(Note 8)
IOTP(REF)
80
85
90
mA
SD pin detection level for OVP
Fault detection level for OTP (Note 7)
VSD falling
VOTP(off)
0.47
0.50
0.53
V
SD pin level for operation recovery after an OTP
detection
VSD rising
VOTP(on)
0.66
0.70
0.74
V
OTP blanking time when circuit starts operating
(Note 8)
tOTP(start)
250
370
ms
SD pin voltage at which thermal fold−back starts
(VREF is decreased)
VTF(start)
0.94
1.00
1.06
V
SD pin voltage at which thermal fold−back stops
(VREF is clamped to VREF50)
VTF(stop)
0.64
0.69
0.74
V
VTF(start) over IOTP(REF) ratio (Note 7)
TJ = +25°C to +125°C
RTF(start)
10.8
11.7
12.6
kW
VTF(stop) over IOTP(REF) ratio (Note 7)
TJ = +25°C to +125°C
RTF(stop)
7.4
8.1
8.8
kW
VOTP(off) over IOTP(REF) ratio (Note 7)
TJ = +25°C to +125°C
ROTP(off)
5.4
5.9
6.4
kW
VOTP(on) over IOTP(REF) ratio (Note 7)
TJ = +25°C to +125°C
ROTP(on)
7.5
8.1
8.7
kW
VREF(50)
40
50
60
%
VREF @ VSD = 600 mV (SD pin falling no OTP
detection) (percent of VREF)
6. Guaranteed by Design
7. A NTC is generally placed between the SD and GND pins. Parameters RTF(start), RTF(stop), ROTP(off) and ROTP(on) give the resistance the
NTC must exhibit to respectively, enter thermal foldback, stop thermal foldback, trigger the OTP limit and allow the circuit recovery after
an OTP situation.
8. At startup, when VCC reaches VCC(on), the controller blanks OTP for more than 250 ms to avoid detecting an OTP fault by allowing the
SD pin voltage to reach its nominal value if a filtering capacitor is connected to the SD pin.
www.onsemi.com
7
NCL30088
Table 4. ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25°C, VCC = 12 V, VZCD = 0 V,
VCS = 0 V, VSD = 1.5 V) For min/max values TJ = −40°C to +125°C, VCC = 12 V)
Description
Test Condition
Symbol
Min
Typ
Max
Unit
Brown−Out ON level (IC start pulsing)
VS rising
VBO(on)
0.95
1.00
1.05
V
Brown−Out OFF level (IC shuts down)
VS falling
VBO(off)
0.85
0.90
0.95
V
BROWN−OUT
ms
BO comparators delay
tBO(delay)
Brown−Out blanking time
tBO(blank)
15
25
35
ms
IBO(bias)
50
250
450
nA
VS pin Pulling−down Current
VS = VBO(on)
30
6. Guaranteed by Design
7. A NTC is generally placed between the SD and GND pins. Parameters RTF(start), RTF(stop), ROTP(off) and ROTP(on) give the resistance the
NTC must exhibit to respectively, enter thermal foldback, stop thermal foldback, trigger the OTP limit and allow the circuit recovery after
an OTP situation.
8. At startup, when VCC reaches VCC(on), the controller blanks OTP for more than 250 ms to avoid detecting an OTP fault by allowing the
SD pin voltage to reach its nominal value if a filtering capacitor is connected to the SD pin.
TYPICAL CHARACTERISTICS
20.0
9.4
9.3
19.5
9.2
9.1
18.5
VCC(off) (V)
VCC(on) (V)
19.0
18.0
17.5
17.0
−25
0
25
50
75
100
125
150
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. VCC Minimum Operating Voltage vs.
Temperature
11.5
6.0
11.0
5.8
5.6
VCC(reset) (V)
5.4
10.0
9.5
9.0
5.2
5.0
4.8
4.6
8.5
4.4
8.0
7.5
−50
−25
Figure 4. VCC Start−up Threshold vs.
Temperature
10.5
VCC(hys) (V)
8.7
8.6
8.5
8.4
8.3
8.2
−50
16.5
16.0
−50
9.0
8.9
8.8
−25
0
25
50
75
100
125
4.2
4.0
−50
150
−25
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Hysteresis (VCC(on) − VCC(off)) vs.
Temperature
Figure 7. VCC(reset) vs. Temperature
www.onsemi.com
8
NCL30088
TYPICAL CHARACTERISTICS
40
28.0
27.8
35
30
27.2
27.0
ICC(start) (mA)
VCC(ovp) (V)
27.6
27.4
26.8
26.6
26.4
25
20
15
10
26.2
26.0
25.8
25.6
−50
5
−25
0
25
50
75
100
125
0
−50
150
−25
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. VCC Over Voltage Protection
Threshold vs. Temperature
Figure 9. Start−up Current vs. Temperature
2.0
150
1.8
125
ICC1 (mA)
ICC(sfault) (mA)
1.6
100
75
50
1.4
1.2
1.0
0.8
25
0.6
−25
0
25
50
75
100
125
0.4
−50
150
−25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Start−up Current in Fault Mode vs.
Temperature
Figure 11. ICC1 vs. Temperature
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
−50
125 150
5.0
4.5
4.0
ICC3 (mA)
ICC2 (mA)
0
−50
3.5
3.0
2.5
2.0
1.5
−25
0
25
50
75
100
125
1.0
−50
150
−25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. ICC2 vs. Temperature
Figure 13. ICC3 vs. Temperature
www.onsemi.com
9
125 150
NCL30088
1.05
400
1.04
380
360
1.02
340
1.01
320
TLEB (ns)
1.03
1.00
0.99
280
260
0.97
240
0.96
0.95
−50
220
−25
0
25
50
75
100
125
200
−50
150
−25
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 14. Maximum Internal Current Limit vs.
Temperature
Figure 15. Leading Edge Blanking vs.
Temperature
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
−50
50
48
46
44
42
40
38
36
34
−25
0
25
50
75
100
125
32
30
−50
150
−25
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 16. Current Limit Propagation Delay vs.
Temperature
Figure 17. Maximum On−time vs. Temperature
1.60
220
210
1.58
200
190
1.56
1.54
1.52
TBCS (ns)
VCS(stop) (V)
300
0.98
TON(max) (ms)
TILIM (ns)
VILIM (V)
TYPICAL CHARACTERISTICS
1.50
1.48
1.46
1.44
1.42
1.40
1.38
−50
−25
0
25
50
75
100
125
150
180
170
160
150
140
130
120
110
100
−50
−25
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 18. VCS(stop) vs. Temperature
Figure 19. Leading Edge Blanking Duration for
VCS(stop) vs. Temperature
www.onsemi.com
10
NCL30088
TYPICAL CHARACTERISTICS
600
100
580
90
560
80
VCS(low) (mV)
ICS(short) (mA)
540
520
500
480
460
−25
0
25
50
75
100
125
20
−50
150
25
50
75
100
125 150
Figure 20. ICS(short) vs. Temperature
Figure 21. VCS(low), VCS Rising vs.
Temperature
14
12
RSRC (W)
RSNK (W)
0
TJ, JUNCTION TEMPERATURE (°C)
16
10
8
6
4
−25
0
25
50
75
100
125
150
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
−50
−25
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 22. Sink Gate Drive Resistance vs.
Temperature
Figure 23. Source Gate Drive Resistance vs.
Temperature
50
45
45
40
40
35
35
30
30
tF (ns)
50
25
25
20
20
15
15
10
10
5
0
−50
−25
TJ, JUNCTION TEMPERATURE (°C)
18
tr (ns)
50
30
20
2
0
−50
60
40
440
420
400
−50
70
−25
0
25
50
75
100
125
150
5
0
−50
−25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 24. Gate Drive Rise Time vs.
Temperature
Figure 25. Gate Drive Fall Time
(CDRV = 470 pF) vs. Temperature
www.onsemi.com
11
125 150
NCL30088
TYPICAL CHARACTERISTICS
9.8
15.0
9.6
14.5
14.0
VDRV(high) (V)
VDRV(low) (V)
9.4
9.2
9.0
8.8
12.0
11.0
8.4
8.2
−50
−25
0
25
50
75
100
125
10.5
10.0
−50
150
−25
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 26. DRV Low Voltage vs. Temperature
Figure 27. DRV High Voltage vs. Temperature
150
80
140
130
75
120
110
65
VZCD(falling) (mV)
70
100
90
80
70
60
55
50
45
60
50
40
40
30
−50
35
30
−50
−25
0
25
50
75
100
125
150
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 28. Upper ZCD Threshold Voltage vs.
Temperature
Figure 29. Lower ZCD Threshold vs.
Temperature
50
2.0
45
1.9
40
1.8
35
1.7
30
25
20
15
10
5
0
−50
−25
TJ, JUNCTION TEMPERATURE (°C)
tZCD(blank1) (ms)
VZCD(rising) (mV)
13.0
12.5
11.5
8.6
VZCD(HYS) (mV)
13.5
1.6
1.5
1.4
1.3
1.2
−25
0
25
50
75
100
125
150
1.1
1.0
−50
−25
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 30. ZCD Hysteresis vs. Temperature
Figure 31. ZCD Blanking Delay vs.
Temperature
www.onsemi.com
12
NCL30088
TYPICAL CHARACTERISTICS
7.8
256
255
254
253
7.6
7.4
252
VREF (mV)
TTIMO (ms)
7.2
7.0
6.8
6.6
6.4
246
−25
0
25
50
75
100
125
245
244
−50
150
25
50
75
100
125 150
Figure 32. ZCD Time−out vs. Temperature
Figure 33. Reference Voltage vs. Temperature
(A and B versions)
110
60
58
90
56
54
70
GEA (mS)
VCS(low) (mV)
0
TJ, JUNCTION TEMPERATURE (°C)
100
60
50
52
50
48
40
30
46
20
10
−50
44
−25
0
25
50
75
100
125
42
−50
150
−25
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 34. Current Sense Lower Threshold
(VCS Falling) vs. Temperature
Figure 35. Error Amplifier Trans−conductance
Gain vs. Temperature
44
21.5
43
21.0
42
20.5
41
IFF (mA)
22.0
20.0
40
19.5
39
19.0
38
18.5
37
18.0
−50
−25
TJ, JUNCTION TEMPERATURE (°C)
80
KLFF (mS)
249
248
247
6.2
6.0
5.8
−50
251
250
−25
0
25
50
75
100
125
150
36
−50
−25
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 36. Feedforward VVS to ICS(offset)
Conversion Ratio vs. Temperature
Figure 37. Line Feedforward Current on CS
Pin (@ VVS = 2 V) vs. Temperature
www.onsemi.com
13
NCL30088
TYPICAL CHARACTERISTICS
120
2.55
115
2.50
2.45
105
VHL (V)
Ioffset(MAX) (mA)
110
100
95
2.40
2.35
90
2.30
85
80
−50
−25
0
25
50
75
100
125
2.25
−50
150
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 38. Ioffset(MAX) vs. Temperature
Figure 39. Threshold for High−line Range
Detection vs. Temperature
2.60
40
2.55
38
36
THL(blank) (ms)
2.50
2.45
VLL (V)
−25
2.40
2.35
34
32
30
28
26
2.30
24
2.25
−25
0
25
50
75
100
125
22
20
−50
150
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 40. Threshold for Low−line Range
Detection vs. Temperature
Figure 41. Blanking Time for Low−line Range
Detection vs. Temperature
1.20
115
1.15
110
1.10
105
1.05
100
1.00
0.95
95
90
0.90
85
0.85
80
0.80
−50
−25
TJ, JUNCTION TEMPERATURE (°C)
tOVLD (ms)
VZCD(short) (V)
2.20
−50
−25
0
25
50
75
100
125
150
75
−50
−25
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 42. Threshold Voltage for Output Short
Circuit Detection vs. Temperature
Figure 43. Short Circuit Detection Timer vs.
Temperature
www.onsemi.com
14
NCL30088
TYPICAL CHARACTERISTICS
5.00
2.20
2.10
4.75
RSD(clamp) (kW)
Trecovery (s)
4.50
4.25
4.00
3.75
3.50
3.00
−50
1.50
1.40
1.20
1.10
1.00
−50
−25
0
25
50
75
100
125
150
−25
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 44. Auto−recovery Timer Duration vs.
Temperature
Figure 45. SD Pin Clamp Series Resistor vs.
Temperature
1.60
2.58
1.55
2.56
1.50
2.54
1.45
2.52
1.40
VOVP (V)
VSD(clamp) (V)
1.70
1.60
1.30
3.25
1.35
1.30
2.50
2.48
2.46
1.25
1.20
2.44
1.15
1.10
−50
2.42
−25
0
25
50
75
100
125
2.40
−50
150
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 46. SD Pin Clamp Voltage vs.
Temperature
Figure 47. SD Pin OVP Threshold Voltage vs.
Temperature
91
90
36
89
88
IOTP(REF) (mA)
34
32
30
28
26
24
22
−50
−25
TJ, JUNCTION TEMPERATURE (°C)
38
TSD(delay) (ms)
2.00
1.90
1.80
−25
0
25
50
75
100
125
150
87
86
85
84
83
82
81
80
79
−50
−25
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 48. TSD(delay) vs. Temperature
Figure 49. IOTP(REF) vs. Temperature
www.onsemi.com
15
NCL30088
12.5
12.4
12.3
12.2
12.1
12.0
11.9
11.8
11.7
11.6
11.5
11.4
11.3
11.2
11.1
11.0
−50
8.8
8.7
RTF(stop) (kW)
RTF(start) (kW)
TYPICAL CHARACTERISTICS
−25
0
25
50
75
100
125
8.2
8.1
8.0
7.9
7.8
7.7
7.6
−50
150
−25
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 50. RTF(start) vs. Temperature
Figure 51. RTF(stop) vs. Temperature
8.8
8.7
8.6
6.4
6.3
6.2
ROTP(on) (kW)
6.1
ROTP(off) (kW)
8.6
8.5
8.4
8.3
6.0
5.9
5.8
5.7
8.5
8.4
8.3
8.2
8.1
8.0
7.9
5.6
−25
0
25
50
75
100
125
7.8
7.7
7.6
−50
150
−25
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 52. ROTP(off) vs. Temperature
Figure 53. ROTP(on) vs. Temperature
55
1.05
54
1.04
53
1.03
52
1.02
VBO(on) (V)
VREF(50) (%)
5.5
5.4
−50
51
50
49
1.01
1.00
0.99
48
0.98
47
0.97
46
45
−50
0.96
0.95
−50
−25
0
25
50
75
100
125
150
−25
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 54. Ratio VREF(50) over VREF vs.
Temperature
Figure 55. Brown−out ON Level vs.
Temperature
www.onsemi.com
16
NCL30088
TYPICAL CHARACTERISTICS
0.95
0.94
0.93
tBO(blank) (ms)
0.91
0.90
0.89
0.88
0.87
0.86
0.85
−50
−25
0
25
50
75
100
125
150
−25
0
25
50
75
100
125 150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 56. Brown−out OFF Level vs.
Temperature
Figure 57. Brown−out Blanking Time vs.
Temperature
500
450
400
350
IBO(bias) (nA)
VBO(off) (V)
0.92
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
−50
300
250
200
150
100
50
0
−50
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 58. VS Pin Pulling−down Current vs.
Temperature
www.onsemi.com
17
150
NCL30088
Application Information
The NCL30088 is a driver for power−factor corrected
flyback and non−isolated buck−boost and SEPIC
converters. Its current−mode, quasi−resonant architecture
optimizes the efficiency by turning on the MOSFET when
its drain−source voltage is minimal (valley). At high line, the
circuit delays the MOSFET turn on until the second valley
is detected to reduce the switching losses. A proprietary
circuitry ensures both accurate regulation of the output
current (without the need for a secondary−side feedback)
and near−unity power factor correction. The circuit contains
a suite of powerful protections to ensure a robust LED driver
design without the need for extra components or overdesign.
• Quasi−Resonance Current−Mode Operation:
implementing quasi−resonance operation in peak
current−mode control, the NCL30088 optimizes the
efficiency by turning on the MOSFET when its
drain−source voltage is minimal (valley). In light−load
conditions, the circuit changes valleys to reduce the
switching losses. For stable operation, the valley at
which the MOSFET switches on remains locked until
the input voltage or the output current set−point
significantly changes.
• Primary−Side Constant−Current Control with
Power Factor Correction: a proprietary circuitry
allows the LED driver to achieve both near−unity
power factor correction and accurate regulation of the
output current without requiring any secondary−side
feedback (no optocoupler needed). A power factor as
high as 0.99 and an output current deviation below ±2%
are typically obtained.
• Main protection features:
♦ Over Temperature Thermal Fold−back /
Shutdown/ Over Voltage Protection: the
NCL30088 features a gradual current foldback to
protect the driver from excessive temperature down
to 50% of the programmed current. This represents a
power reduction of the LED by more than 50%. If
the temperature continues to rise after this point to a
second level, the controller stops operating. This
mode would only be expected to be reached if there
is a severe fault. The first and second temperature
thresholds depend on the value of the NTC
ZCD
VCS
STOP
VVS
♦
♦
♦
♦
♦
connected to the SD pin. Note, the SD pin can also
be used to shutdown the device by pulling this pin
below the VOTP(off) min level. A Zener diode can
also be used to pull−up the pin and stop the
controller for adjustable OVP protection. Both
protections are latching−off (A and C versions) or
auto−recovery (the circuit can recover operation
after 4−s delay has elapsed − B and D versions).
Cycle−by−cycle peak current limit: when the
current sense voltage exceeds the internal threshold
VILIM, the MOSFET is immediately turned off
(cycle−by−cycle current limitation).
Winding or Output Diode Short−Circuit
Protection: an additional comparator senses the CS
signal and stops the controller if it exceeds 150% x
VILIM for 4 consecutive cycles. This feature can
protect the converter if a winding is shorted or if the
output diode is shorted or simply if the transformer
saturates. This protection is latching−off (A and C
versions) or auto−recovery (B and D versions).
Output Short−circuit protection: if the ZCD pin
voltage remains low for a 90−ms time interval, the
controller detects that the output or the ZCD pin is
grounded and hence, stops operation. This protection
is latching−off (A and C versions) or auto−recovery
(B and D versions).
Open LED protection: if the VCC pin voltage
exceeds the OVP threshold, the controller shuts
down and waits 4 seconds before restarting
switching operation.
Floating or Short Pin Detection: the circuit can
detect most of these situations which helps pass
safety tests.
Power Factor and Constant Current Control
The NCL30088 embeds an analog/digital block to control
the power factor and regulate the output current by
monitoring the ZCD, VS and CS pin voltages (signals ZCD,
VS and VCS of Figure 59). This circuitry generates the
current setpoint (VCONTROL/4) and compares it to the
current sense signal (VCS) to dictate the MOSFET turning
off event when VCS exceeds VCONTROL/4.
VREFX
PWM Latch reset
Power Factor and
Constant−Current
Control
COMP
C1
Figure 59. Power Factor and Constant−Current Control
www.onsemi.com
18
NCL30088
Start−up Sequence
As illustrated in Figure 59, the VS pin provides the
sinusoidal reference necessary for shaping the input current.
The obtained current reference is further modulated so that
when averaged over a half−line period, it is equal to the
output current reference (VREFX). This averaging process is
made by an internal Operational Trans−conductance
Amplifier (OTA) and the capacitor connected to the COMP
pin (C1 of Figure 59). Typical COMP capacitance is 1 mF
and should not be less than 470 nF to ensure stability. The
COMP ripple does not affect the power factor performance
as the circuit digitally eliminates it when generating the
current setpoint.
If the VS pin properly conveys the sinusoidal shape, power
factor will be close to unity and the Total Harmonic
Distortion (THD) will be low. In any case, the output current
will be well regulated following the equation below:
I out +
V REFX
2N PSR sense
Generally an LED lamp is expected to emit light in < 1 sec
and typically within 300 ms. The start−up phase consists of
the time to charge the VCC capacitor, begin switching and
the time to charge the output capacitor until sufficient
current flows into the LED string. To speed−up this phase,
the following defines the start−up sequence:
• The COMP pin is grounded when the circuit is off. The
average COMP voltage needs to exceed the VS pin
peak value to have the LED current properly regulated
(whatever the current target is). To speed−up the COMP
capacitance charge and shorten the start−up phase, an
internal 80−mA current source adds to the OTA sourced
current (60 mA max typically) to charge up the COMP
capacitance. The 80−mA current source remains on until
the OTA starts to sink current as a result of the COMP
pin voltage sufficient rise. At that moment, the COMP
pin being near its steady−state value, it is only driven
by the OTA.
• If VCC drops below the VCC(off) threshold because the
circuit fails to start−up properly on the first attempt, a
new try takes place as soon as VCC is recharged to
VCC(on). The COMP voltage is not reset at that
moment. Instead, the new attempt starts with the
COMP level obtained at the end of the previous
operating phase.
• If the load is shorted, the circuit will operate in hiccup
mode with VCC oscillating between VCC(off) and
VCC(on) until the AUX_SCP protection trips
(AUX_SCP is triggered if the ZCD pin voltage does
not exceed 1 V within a 90−ms operation period of time
thus indicating a short to ground of the ZCD pin or an
excessive load preventing the output voltage from
rising). The NCL30088A and NCL30088C latch off in
this case. With the B and D versions, the AUX_SCP
protection forces the 4−s auto−recovery delay to reduce
the operation duty−ratio. Figure 60 illustrates a start−up
sequence with the output shorted to ground, in this
second case.
(eq. 1)
Where:
• NPS is the secondary to primary transformer turns
NPS = NS/NP. NPS is 1 in the case of non−isolated
buck−boost or SEPIC converter.
• Rsense is the current sense resistor (see Figure 1).
• VREFX is the output current internal reference.
VREFX = VREF (250 mV in A and B versions and
200 mV in C and D versions, typically) at full load.
The output current reference (VREFX) is VREF unless the
temperature is high enough to activate the thermal fold−back
(see “protections” section).
If a major fault is detected, the circuit enters the
latched−off or auto−recovery mode and the COMP pin is
grounded (except in an UVLO condition). This ensures a
clean start−up when the circuit resumes operation.
www.onsemi.com
19
NCL30088
VCC(on)
VCC
VCC(off)
(‧‧‧ )
(‧‧‧ )
time
AUX_SCPtrips
as t 1 + t2 + t3 = tOVLD
(tOVLD ^90 ms)
DRV
t1
t3
t1
t2
t3
time
t2
trecovery (^4 s )
trecovery (^4 s )
Figure 60. Start−up Sequence in a Load Short−circuit Situation (auto−recovery versions)
Zero Crossing Detection Block
NCL30088 features a time−out circuit that generates pulses
if the voltage on ZCD pin stays below the 55−mV threshold
for 6.5 ms. The time−out also acts as a substitute clock for the
valley detection and simulates a missing valley in case the
free oscillations are too damped.
The ZCD pin detects when the drain−source voltage of the
power MOSFET reaches a valley by crossing below the
55−mV internal threshold. At startup or in case of extremely
damped free oscillations, the ZCD comparator may not be
able to detect the valleys. To avoid such a situation, the
Figure 61. Zero Current Detection Block
www.onsemi.com
20
NCL30088
• After the appropriate number of “clock” pulses in
If the ZCD pin or the auxiliary winding happen to be
shorted, the time−out function would normally make the
controller keep switching and hence lead to improper LED
current value. The “AUX_SCP” protection prevents such a
stressful operation: a secondary timer starts counting that is
only reset when the ZCD voltage exceeds the VZCD(short)
threshold (1 V typically). If this timer reaches 90 ms (no
ZCD voltage pulse having exceeded VZCD(short) for this time
period), the controller detects a fault and stops operation for
4 seconds (B and D versions) or latches off (A and C
versions).
The “clock” shown in Figure 61 is used by the “valley
selection frequency foldback” circuitry of the block diagram
(Figure 3), to generate the next DRV pulse (if no fault
prevents it):
• Immediately when the clock occurs in QR mode at low
line or valley 2 at high line (full load)
thermal foldback mode
For an optimal operation, the maximum ZCD level
should be maintained below 5 V to stay safely below the
built in clamping voltage of the pin.
Line Range Detection
As sketched in Figure 62, this circuit detects the low−line
range if the VS pin remains below the VLL threshold (2.3 V
typical) for more than the 25−ms blanking time. High−line
is detected as soon as the VS pin voltage exceeds VHL (2.4 V
typical). These levels roughly correspond to 184−V rms and
192−V rms line voltages if the external resistors divider
applied to the VS pin is designed to provide a 1−V peak value
at 80 V rms.
Figure 62. Line Range Detection
efficiency over the line range by turning on the MOSFET at
the first valley in low-line conditions and at the second
valley in the high-line case. This is illustrated by Figure 63
that sketches the MOSFET Drain-source voltage in both
cases. In the event that thermal foldback is activated,
additional valleys can be skipped as the power is reduced.
In the low-line range, conduction losses are generally
dominant. Adding a dead-time would further increase these
losses. Hence, only a short dead-time is necessary to reach
the MOSFET valley. In high-line conditions, switching
losses generally are the most critical. It is thus efficient to
skip one valley to lower the switching frequency. Hence,
under normal operation, the NCL30088 optimizes the
Figure 63. Full−load Operation − Quasi−resonant Mode in low line (left), turn on at valley 2 when in high line (right)
Line Feedforward
external resistor in series between the sense resistor and the
CS pin, a voltage offset proportional to the input voltage is
added to the CS signal for the MOSFET on−time.
As illustrated by Figure 64, the input voltage is sensed by
the VS pin and converted into a current. By adding an
www.onsemi.com
21
NCL30088
Bulk rail
vDD
VS
CS
I CS(offset)
RCS
Rsense
Q_drv
Figure 64. Line Feed−Forward Schematic
In Figure 64, Q_drv designates the output of the PWM latch which is high for the on−time and low otherwise.
Protections
The circuit incorporates a large variety of protections to
make the LED driver very rugged. Among them, we can list:
abnormally steep slope of the current, internal propagation
delays and the MOSFET turn−off time will make possible
the current rise up to 50% or more of the nominal maximum
value set by VILIM. As illustrated in Figure 65, the circuit
uses this current overshoot to detect a winding short circuit.
The leading edge blanking (LEB) time for short circuit
protection (LEB2) is significantly faster than the LEB time
for cycle−by−cycle protection (LEB1). Practically, if four
consecutive switching periods lead the CS pin voltage to
exceed (VCS(stop)=150% *VILIM), the controller enters
auto−recovery mode in B and D versions (4−s operation
interruption between active bursts) and latches off in A and
C versions. Similarly, this function can also protect the
power supply if the output diode is shorted or if the
transformer simply saturates.
Output Short Circuit Situation
An overload fault is detected if the ZCD pin voltage
remains below VZCD(short) for 90 ms. In such a situation, the
circuit stops generating pulses until the 4−s delay
auto−recovery time has elapsed (B and D versions) or
latches off (A and C versions).
Winding or Output Diode Short Circuit Protection
If a transformer winding happens to be shorted, the
primary inductance will collapse leading the current to ramp
up in a very abrupt manner. The VILIM comparator (current
limitation threshold) will trip to open the MOSFET and
eventually stop the current rise. However, because of the
S
DRV
Q
Vdd
aux
UVLO
Q
TSD
CS
+
V control / 4
UVLO
PWMreset
VCC
Vcc
management
BONOK
R
LEB1
−
latch
4−s timer
+
VCCreset
(grand
reset)
STOP
Ipkmax
−
V ILIMIT
AUX_SCP
SD Pin OVP
(OVP2)
LEB2
+
−
WOD_SCP
VCC(ovp)
4−pulse
counter
OTP
V CS(stop)
S
S
OFF
Q
Q
R
4−s timer
Q
AUTO − RECOVERY
(B and D versions)
R
VCCreset
Figure 65. Winding Short Circuit Protection, Max. Peak Current Limit Circuits
www.onsemi.com
22
latch
Q
LATCHING − OFF
(A and C versions)
NCL30088
VCC Over Voltage Protection
Programmable Over Voltage Protection (OVP2)
The circuit stops generating pulses if VCC exceeds
VCC(OVP) and enters auto−recovery mode. This feature
protects the circuit if the output LED string happens to open
or is disconnected.
Connect a Zener diode between VCC and the SD pin to set
a programmable VCC OVP (DZ of Figure 66). The triggering
level is (VZ+VOVP) where VOVP is the 2.5−V internal
threshold. If this protection trips, the NCL30088A and
NCL30088C latch off while the NCL30088B and
NCL30088D enter the auto−recovery mode.
Vdd
IOTP(REF)
NCL30088B / NCL30088D
(autorecovery versions)
SD Pin OVP (OVP2) DETECTION
S
+
Q
VCC
−
OFF
Q
VOVP
T SD(delay)
DZ
R
SD
4−s Timer
OTP DETECTION
−
NTC
NCP30088A / NCL30088C
(latching off versions)
+
T OTP(start)
V OTP(off) / V
OTP(on)
S
Q
Latch
Q
Thermal
Foldback
R
V TF
grand reset
Clamp
Rclamp
Vclamp
Figure 66. Thermal Foldback and OVP/OTP Circuitry
The SD pin is clamped to about 1.35 V (Vclamp ) through
a 1.6−kW resistor (Rclamp ). It is then necessary to inject about
ǒ
circuit gradually reduces the LED current down 50% of its
nominal value when VSD reaches VTF(stop), in accordance
with the characteristic of Figure 67.
If this thermal foldback cannot prevent the temperature
from rising (testified by VSD drop below VOTP), the circuit
latches off (A and C versions) or enters auto−recovery mode
(B and D versions) and cannot resume operation until VSD
exceeds VOTP(on) to provide some temperature hysteresis
(around 10°C typically). The OTP thresholds nearly
correspond to the following resistances of the NTC:
• Thermal foldback starts when RNTC ≤ RTF(start)
(11.7 kW, typically)
• Thermal foldback stops when RNTC ≤ RTF(stop) (8.0 kW,
typically)
• OTP triggers when RNTC ≤ ROTP(off) (5.9 kW, typically)
• OTP is removed when RNTC ≥ ROTP(on) (8.0 kW,
typically) (Note 9)
Ǔ
V OVP * V clamp
R clamp
that is
ǒ2.501.6* k1.35 ^ 700 mAǓ
typically, to trigger the OVP protection. This current helps
ensure an accurate detection by using the Zener diode far
from its knee region.
Programmable Over Temperature Foldback Protection
(OTP)
Connect an NTC between the SD pin and ground to detect
an over−temperature condition. In response to a high
temperature (detected if VSD drops below VTF(start)), the
9. This condition is sufficient for operation recovery of the B and D versions. For the A and C versions which latch off when OTP triggers, the
circuit further needs to be reset by a VCC drop below VCC(reset).
An online EXCEL®−based design tool is available to aid in selecting the appropriate NTC value.
www.onsemi.com
23
NCL30088
At startup, when VCC reaches VCC(on), the OTP
comparator is blanked for at least 250 ms in order to allow the
SD pin voltage to reach its nominal value if a filtering
capacitor is connected to the SD pin. This avoids flickering
of the LED light during turn on.
Brown−Out Protection
The NCL30088 prevents operation when the line voltage
is too low for proper operation. As illustrated in Figure 68,
the circuit detects a brown−out situation if the VS pin
remains below the VBO(off) threshold (0.9 V typical) for
more than the 25−ms blanking time. In this case, the
controller stops operating. Operation resumes as soon as the
VS pin voltage exceeds VBO(on) (1.0 V typical) and VCC is
higher than VCC(on). To ease recovery, the circuit overrides
the VCC normal sequence (no need for VCC cycling down
below VCC(off)). Instead, its consumption immediately
reduces to ICC(start) so that VCC rapidly charges up to
VCC(on). Once done, the circuit re−starts operating.
Figure 67. Output Current Reduction versus SD
Pin Voltage
Figure 68. Brown−out Circuit
• Fault of the GND connection
Die Over Temperature (TSD)
The circuit stops operating if the junction temperature (TJ)
exceeds 150°C typically. The controller remains off until TJ
goes below nearly 100°C.
If the GND pin is properly connected, the supply
current drawn from the positive terminal of the VCC
capacitor, flows out of the GND pin to return to the
negative terminal of the VCC capacitor. If the GND pin
is not connected, the circuit ESD diodes offer another
return path. The accidental non−connection of the GND
pin is monitored by detecting that one of the ESD diode
is conducting. Practically, the ESD diode of CS pin is
monitored. If such a fault is detected for 200 ms, the
circuit stops generating DRV pulses.
Pin Connection Faults
The circuit addresses most pin connection fault cases:
• CS pin short to ground
The circuit senses the CS pin impedance every time it
starts−up and after DRV pulses terminated by the 36−ms
maximum on−time. If the measured impedance does
not exceed 120 ohm typically, the circuit stops
operating. In practice, it is recommended to place a
minimum of 250−ohm in series between the CS pin and
the current sense resistor to take into account possible
parametric deviations.
More generally, incorrect pin connection situations
(open, grounded, shorted to adjacent pin) are covered by
AND9204/D.
www.onsemi.com
24
NCL30088
Fault Modes
In the case of a latching−off fault, the circuit stops pulsing
until the LED driver is unplugged and VCC drops below
VCC(reset). At that moment, the fault is cleared and the circuit
could resume operation.
In the auto−recovery case, the circuit cannot generate
DRV pulses for the auto−recovery 4−s delay. When this time
has elapsed, the circuit recovers operation as soon as the
VCC voltage has exceeded VCC(on).
In the B and D versions, all these protections are
auto−recovery. The SD pin OTP and OVP, WOD_SCP and
AUX_SCP are latching off in the A and C versions (see
Table 5).
The circuit turns off whenever a major faulty condition
prevents it from operating:
• Severe OTP (VSD level below VOTP(off))
• VCC OVP
• OVP2 (additional OVP provided by SD pin)
• Output diode short circuit protection: “WOD_SCP
high”
• Output / Auxiliary winding Short circuit protection:
“Aux_SCP high”
• Die over temperature (TSD)
In this mode, the DRV pulses generation is interrupted.
Table 5. PROTECTION MODES
AUX_SCP
WOD_SCP
SD Pin OTP
SD Pin OVP
NCL30088A*
Latching off
Latching off
Latching off
Latching off
NCL30088B
Auto−recovery
Auto−recovery
Auto−recovery
Auto−recovery
NCL30088C*
Latching off
Latching off
Latching off
Latching off
NCL30088D
Auto−recovery
Auto−recovery
Auto−recovery
Auto−recovery
ORDERING INFORMATION
Device
Package Type
Shipping
SOIC−8
(Pb−Free/Halide Free)
2500 / Tape & Reel
NCL30088ADR2G*
NCL30088BDR2G
NCL30088CDR2G*
NCL30088DDR2G
*Please contact local sales representative for availability.
EXCEL is a registered trademark of Microsoft Corporation.
www.onsemi.com
25
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
8
1
SCALE 1:1
−X−
DATE 16 FEB 2011
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
8
5
S
B
0.25 (0.010)
M
Y
M
1
4
−Y−
K
G
C
N
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
M
D
0.25 (0.010)
M
Z Y
S
X
J
S
8
8
1
1
IC
4.0
0.155
XXXXX
A
L
Y
W
G
IC
(Pb−Free)
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
XXXXXX
AYWW
1
1
Discrete
XXXXXX
AYWW
G
Discrete
(Pb−Free)
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
1.270
0.050
SCALE 6:1
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
8
8
XXXXX
ALYWX
G
XXXXX
ALYWX
1.52
0.060
0.6
0.024
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
7.0
0.275
DIM
A
B
C
D
G
H
J
K
M
N
S
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42564B
SOIC−8 NB
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOIC−8 NB
CASE 751−07
ISSUE AK
DATE 16 FEB 2011
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. COLLECTOR
4. EMITTER
5. EMITTER
6. BASE
7. BASE
8. EMITTER
STYLE 2:
PIN 1. COLLECTOR, DIE, #1
2. COLLECTOR, #1
3. COLLECTOR, #2
4. COLLECTOR, #2
5. BASE, #2
6. EMITTER, #2
7. BASE, #1
8. EMITTER, #1
STYLE 3:
PIN 1. DRAIN, DIE #1
2. DRAIN, #1
3. DRAIN, #2
4. DRAIN, #2
5. GATE, #2
6. SOURCE, #2
7. GATE, #1
8. SOURCE, #1
STYLE 4:
PIN 1. ANODE
2. ANODE
3. ANODE
4. ANODE
5. ANODE
6. ANODE
7. ANODE
8. COMMON CATHODE
STYLE 5:
PIN 1. DRAIN
2. DRAIN
3. DRAIN
4. DRAIN
5. GATE
6. GATE
7. SOURCE
8. SOURCE
STYLE 6:
PIN 1. SOURCE
2. DRAIN
3. DRAIN
4. SOURCE
5. SOURCE
6. GATE
7. GATE
8. SOURCE
STYLE 7:
PIN 1. INPUT
2. EXTERNAL BYPASS
3. THIRD STAGE SOURCE
4. GROUND
5. DRAIN
6. GATE 3
7. SECOND STAGE Vd
8. FIRST STAGE Vd
STYLE 8:
PIN 1. COLLECTOR, DIE #1
2. BASE, #1
3. BASE, #2
4. COLLECTOR, #2
5. COLLECTOR, #2
6. EMITTER, #2
7. EMITTER, #1
8. COLLECTOR, #1
STYLE 9:
PIN 1. EMITTER, COMMON
2. COLLECTOR, DIE #1
3. COLLECTOR, DIE #2
4. EMITTER, COMMON
5. EMITTER, COMMON
6. BASE, DIE #2
7. BASE, DIE #1
8. EMITTER, COMMON
STYLE 10:
PIN 1. GROUND
2. BIAS 1
3. OUTPUT
4. GROUND
5. GROUND
6. BIAS 2
7. INPUT
8. GROUND
STYLE 11:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
STYLE 12:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
STYLE 13:
PIN 1. N.C.
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
STYLE 14:
PIN 1. N−SOURCE
2. N−GATE
3. P−SOURCE
4. P−GATE
5. P−DRAIN
6. P−DRAIN
7. N−DRAIN
8. N−DRAIN
STYLE 15:
PIN 1. ANODE 1
2. ANODE 1
3. ANODE 1
4. ANODE 1
5. CATHODE, COMMON
6. CATHODE, COMMON
7. CATHODE, COMMON
8. CATHODE, COMMON
STYLE 16:
PIN 1. EMITTER, DIE #1
2. BASE, DIE #1
3. EMITTER, DIE #2
4. BASE, DIE #2
5. COLLECTOR, DIE #2
6. COLLECTOR, DIE #2
7. COLLECTOR, DIE #1
8. COLLECTOR, DIE #1
STYLE 17:
PIN 1. VCC
2. V2OUT
3. V1OUT
4. TXE
5. RXE
6. VEE
7. GND
8. ACC
STYLE 18:
PIN 1. ANODE
2. ANODE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. CATHODE
8. CATHODE
STYLE 19:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. MIRROR 2
7. DRAIN 1
8. MIRROR 1
STYLE 20:
PIN 1. SOURCE (N)
2. GATE (N)
3. SOURCE (P)
4. GATE (P)
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
STYLE 21:
PIN 1. CATHODE 1
2. CATHODE 2
3. CATHODE 3
4. CATHODE 4
5. CATHODE 5
6. COMMON ANODE
7. COMMON ANODE
8. CATHODE 6
STYLE 22:
PIN 1. I/O LINE 1
2. COMMON CATHODE/VCC
3. COMMON CATHODE/VCC
4. I/O LINE 3
5. COMMON ANODE/GND
6. I/O LINE 4
7. I/O LINE 5
8. COMMON ANODE/GND
STYLE 23:
PIN 1. LINE 1 IN
2. COMMON ANODE/GND
3. COMMON ANODE/GND
4. LINE 2 IN
5. LINE 2 OUT
6. COMMON ANODE/GND
7. COMMON ANODE/GND
8. LINE 1 OUT
STYLE 24:
PIN 1. BASE
2. EMITTER
3. COLLECTOR/ANODE
4. COLLECTOR/ANODE
5. CATHODE
6. CATHODE
7. COLLECTOR/ANODE
8. COLLECTOR/ANODE
STYLE 25:
PIN 1. VIN
2. N/C
3. REXT
4. GND
5. IOUT
6. IOUT
7. IOUT
8. IOUT
STYLE 26:
PIN 1. GND
2. dv/dt
3. ENABLE
4. ILIMIT
5. SOURCE
6. SOURCE
7. SOURCE
8. VCC
STYLE 29:
PIN 1. BASE, DIE #1
2. EMITTER, #1
3. BASE, #2
4. EMITTER, #2
5. COLLECTOR, #2
6. COLLECTOR, #2
7. COLLECTOR, #1
8. COLLECTOR, #1
STYLE 30:
PIN 1. DRAIN 1
2. DRAIN 1
3. GATE 2
4. SOURCE 2
5. SOURCE 1/DRAIN 2
6. SOURCE 1/DRAIN 2
7. SOURCE 1/DRAIN 2
8. GATE 1
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42564B
SOIC−8 NB
STYLE 27:
PIN 1. ILIMIT
2. OVLO
3. UVLO
4. INPUT+
5. SOURCE
6. SOURCE
7. SOURCE
8. DRAIN
STYLE 28:
PIN 1. SW_TO_GND
2. DASIC_OFF
3. DASIC_SW_DET
4. GND
5. V_MON
6. VBULK
7. VBULK
8. VIN
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
工商网监
湘ICP备2023018690号
