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NCL30386A1DR2G

NCL30386A1DR2G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOP10

  • 描述:

    DIMMABLE POWER FACTOR COR

  • 数据手册
  • 价格&库存
NCL30386A1DR2G 数据手册
Dimmable Power Factor Corrected LED Driver Featuring Primary Side CC / CV Control NCL30386 The NCL30386 is a power factor corrected controller targeting isolated and non−isolated “smart−dimmable” constant−current LED drivers. Designed to support flyback, buck−boost and SEPIC topologies, the controller operates in a quasi−resonant mode to provide high efficiency. Thanks to a novel control method, the device is able to tightly regulate a constant LED current and voltage from the primary side. This removes the need for secondary−side feedback circuitry, its biasing and for an optocoupler. The device also provides near−unity power factor correction. The device is highly integrated with a minimum number of external components. A robust suite of safety protection is built in to simplify the design. This device is specifically intended for very compact space efficient designs and supports analog and digital dimming with two dedicated dimming inputs control ideal for Smart LED Lighting applications. Features • • • • • • • • • • • High Voltage Startup Quasi−resonant Peak Current−mode Control Operation Primary Side Feedback CC / CV Control Tight LED Constant Current Regulation of ±2% Typical Digital Power Factor Correction Analog and Digital Dimming Cycle by Cycle Peak Current Limit Wide Operating VCC Range −40 to + 125°C Robust Protection Features ♦ Brown−Out ♦ OVP on VCC ♦ Constant Voltage / LED Open Circuit Protection ♦ Winding Short Circuit Protection ♦ Secondary Diode Short Protection ♦ Output Short Circuit Protection ♦ Thermal Shutdown www.onsemi.com MARKING DIAGRAM 9 9 L30386x ALYWX G 1 SOIC−9 CASE 751BP L30386 x A L Y W G 1 = Specific Device Code = Version = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package PIN CONNECTIONS HV ADIM 1 COMP 2 ZCD 3 8 PDIM CS 4 7 VCC GND 5 6 DRV 10 ORDERING INFORMATION See detailed ordering and shipping information on page 18 of this data sheet. Typical Applications • Integral LED Bulbs • LED Power Driver Supplies • LED Light Engines © Semiconductor Components Industries, LLC, 2018 July, 2020 − Rev. 3 1 Publication Order Number: NCL30386/D NCL30386 . . Aux . VADIM NCL30386 1 10 2 9 3 8 4 7 5 6 PWM signal Figure 1. Typical Application Schematic for NCL30386 PIN FUNCTION DESCRIPTION NCL30386 Pin N5 Pin Name Function 1 ADIM Analog dimming Pin Description 2 COMP OTA output for CV loop This pin receives a compensation network to stabilize the CV loop 3 ZCD Zero crossing Detection Vaux sensing This pin connects to the auxiliary winding and is used to detect the core reset event. This pin also senses the auxiliary winding voltage for accurate output voltage control 4 CS Current sense 5 GND − 6 DRV Driver output 7 VCC Supplies the controller 8 PDIM PWM dimming 9 NC creepage 10 HV High Voltage sensing This pin is used for analog control of the output current. Applying a voltage varying between VDIM(EN) and VDIM100 will dim the output current from 0.5% to 100%. This pin monitors the primary peak current. The controller ground The driver’s output to an external MOSFET This pin is connected to an external auxiliary voltage. This pin is used PWM dimming control. An optocoupler can be connected directly to the pin if the PWM control signal is from the secondary side This pin connects after the diode bridge to provide the startup current and internal high voltage sensing function. www.onsemi.com 2 NCL30386 INTERNAL CIRCUIT ARCHITECTURE CS_shorted Enable V REF OFF f_OVP Internal Thermal Shutdown V DD STOP VCC UVLO Fault Management VCC Management Latch UVP COMP VCC_max Ipkmax Qdrv BO_NOK V HVdiv FF_mode V HVdiv V REFX BO_NOK ZCD f_OVP Zero Crossing Detection Logic (ZCD Blanking, Time−Out, ...) S UVP Q V HVdiv VCC Qdrv Clamp Circuit Q DRV R Line feed−forward Leading Edge Blanking STOP V REF(PFC) CS_reset Constant−Current Control V DIMA Ipkmax ADIM Enable V DIMA Max. Peak Current Limit Ipkmax CS Short Protection CS_shorted Winding and Output diode Short Circuit Protection Analog Dimming STOP Enable GND HV Brown−Out FF_mode Valley Selection Frequency Foldback Under Voltage Protection CS HV STUP WOD_SCP V CV Constant Voltage Control VCC Over Voltage Protection V CV dc_DIM dc_DIM PWM Dimming VREFX setpoint V REFX V HVdiv WOD_SCP Generation of the Reference Voltage for Power Factor Corr. Figure 2. Internal Circuit Architecture NCL30386 www.onsemi.com 3 V REF(PFC) PDIM NCL30386 MAXIMUM RATINGS TABLE Symbol VCC(MAX) ICC(MAX) Rating VDRV(MAX) Maximum driver pin voltage, DRV pin, continuous voltage IDRV(MAX) Maximum current for DRV pin VHV(MAX) IHV(MAX) Value Unit −0.3 to 30 Internally limited V mA −0.3, VDRV (Note 1) −300, +500 V mA −0.3, +700 ±20 V mA −0.3, 5.5 (Note 2) −2, +5 V mA Maximum Power Supply voltage, VCC pin, continuous voltage Maximum current for VCC pin Maximum voltage on HV pin Maximum current for HV pin (dc current self−limited if operated within the allowed range) VMAX IMAX Maximum voltage on low power pins (except pins HV, DRV and VCC) Current range for low power pins (except pins HV, DRV and VCC) RθJ−A Thermal Resistance Junction−to−Air 180 °C/W Maximum Junction Temperature 150 °C Operating Temperature Range −40 to +125 °C Storage Temperature Range −65 to +150 °C TJ(MAX) ESD Capability, HBM model except HV pin (Note 3) 4 kV ESD Capability, HBM model HV pin 700 V ESD Capability, MM model (Note 3) 200 V 1 kV ESD Capability, CDM model (Note 3) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VDRV is the DRV clamp voltage VDRV(high) when VCC is higher than VDRV(high). VDRV is VCC otherwise. 2. This level is low enough to guarantee not to exceed the internal ESD diode and 5.5 V ZENER diode. More positive and negative voltages can be applied if the pin current stays within the −2 mA / 5 mA range. 3. This device series contains ESD protection and exceeds the following tests: Human Body Model 4000 V per Mil−Std−883, Method 3015. Charged Device Model 2000 V per JEDEC Standard JESD22−C101D. 4. This device contains latch−up protection and exceeds 100 mA per JEDEC Standard JESD78. ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25°C, VCC = 12 V, VZCD = 0 V, , VCS = 0 V) For min/max values TJ = −40°C to +125°C, Max TJ = 150°C, VCC = 12 V) Test Condition Symbol Min High voltage current source VCC = VCC(on) – 200 mV IHV(start2) 3.3 High voltage current source VCC = 0 V IHV(start1) VCC = 0 V VHV(MIN) VHV = 450 V IHV(leak) Description Typ Max Unit 4.7 6.1 mA HIGH VOLTAGE SECTION VCC level for IHV(start1) to IHV(start2) transition 300 VCC(TH) Minimum startup voltage HV source leakage current Maximum rms input voltage for correct constant−current operation (TJ = −20°C to 125°C) mA 2 − V 17 − V 4.5 10 mA VHV(OL) 265 Vrms VCC(on) VCC(on2) VCC(off) VCC(HYS) VCC(reset) 16 9.77 8.2 7.8 4 18 10.80 8.6 − 5 20 11.24 9.4 − 6 Over Voltage Protection VCC OVP threshold VCC(OVP) 25 26.5 28 V VCC(off) noise filter (Note 6) VCC(reset) noise filter (Note 6) tVCC(off) tVCC(reset) − − 5 20 − − ms ICC1 ICC2 ICC3 ICC4 1.2 – − − 1.5 3.0 3.3 2.9 1.8 3.5 4.0 3.4 SUPPLY SECTION Supply Voltage Startup Threshold Threshold for turning off DSS (Note 5) Minimum Operating Voltage Hysteresis VCC(on) – VCC(off) Internal logic reset Supply Current Device Disabled/Fault Device Enabled/No output load on pin 5 Device Switching (Fsw = 65 kHz) Device switching (Fsw = 15 kHz) VCC increasing VCC increasing VCC decreasing VCC decreasing VCC > VCC(off) Fsw = 65 kHz CDRV = 470 pF, Fsw = 65 kHz VREFX = 10%of max value 5. Refer to ordering table option at the end of the document. 6. Guaranteed by design. www.onsemi.com 4 V mA NCL30386 ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25°C, VCC = 12 V, VZCD = 0 V, , VCS = 0 V) For min/max values TJ = −40°C to +125°C, Max TJ = 150°C, VCC = 12 V) Description Test Condition Symbol Min Typ Max Unit Maximum Internal current limit VILIM 1.31 1.38 1.45 V Leading Edge Blanking Duration for VILIM tLEB 270 330 390 ns Propagation delay from current detection to gate off−state tILIM − 100 150 ns Maximum on−time (option B) ton(MAX) 29 39 49 ms Maximum on−time (option A) ton(MAX2) 16 20 24 ms Threshold for immediate fault protection activation (140% of VILIM) CURRENT SENSE VCS(stop) 1.91 1.99 2.07 V Leading Edge Blanking Duration for VCS(stop) tBCS − 170 − ns Current source for CS to GND short detection ICS(short) 400 500 600 mA VCS(low) 20 60 100 mV Drive Resistance DRV Sink DRV Source RSNK RSRC − − 13 30 − − Drive current capability DRV Sink (Note GBD) DRV Source (Note GBD) ISNK ISRC − − 500 300 − − Current sense threshold for CS to GND short detection VCS rising GATE DRIVE W mA Rise Time (10 % to 90 %) CDRV = 470 pF tr – 30 − ns Fall Time (90 % to 10 %) CDRV = 470 pF tf – 20 − ns DRV Low Voltage VCC = VCC(off)+0.2 V CDRV = 470 pF, RDRV=33 kW VDRV(low) 8 – − V DRV High Voltage VCC = VCC(MAX) CDRV = 470 pF, RDRV=33 kW VDRV(high) 10 12 14 V Upper ZCD threshold voltage VZCD rising VZCD(rising) − 90 150 mV Lower ZCD threshold voltage VZCD falling VZCD(falling) 35 55 − mV VZCD(HYS) 15 − − mV VZCD decreasing tZCD(DEM) − − 150 ns Blanking delay after on−time (ZCD blank option B) VREFX > 0.35 V tZCD(blank1)B 1.1 1.5 1.9 ms Blanking Delay at light load (ZCD blank option B) VREFX < 0.25 V tZCD(blank2)B 0.6 0.8 1.0 ms Blanking delay after on−time (ZCD blank option A) VREFX > 0.35 V tZCD(blank1)A 0.75 1.0 1.25 ms Blanking Delay at light load (ZCD blank option A) VREFX < 0.25 V tZCD(blank2)A 0.45 0.6 0.75 ms tTIMO 5 6.5 8 ms ZERO VOLTAGE DETECTION CIRCUIT ZCD hysteresis Propagation Delay from valley detection to DRV high Timeout after last DEMAG transition Pulling−down resistor VZCD = VZCD(falling) RZCD(pd) 200 kW CONSTANT CURRENT CONTROL Reference Voltage at TJ = 25°C to 100°C VREF Reference Voltage TJ = −40°C to 125°C 10% reference Voltage (TJ = 25°C to 85°C) 10% reference Voltage (TJ = −40°C to 125°C) Current sense lower threshold for detection of the leakage inductance reset time VCS falling Blanking time for leakage inductance reset detection 326 333 340 mV VREF 323 333 343 mV VREF10 23.45 33.50 43.55 mV VREF10 21.77 33.50 45.23 mV VCS(low) 20 50 100 mV tCS(low) − 120 − ns VREF(CV) 2.42 2.48 2.54 V CONSTANT VOLTAGE SECTION Internal voltage reference for constant voltage regulation TJ = 25°C www.onsemi.com 5 NCL30386 ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25°C, VCC = 12 V, VZCD = 0 V, , VCS = 0 V) For min/max values TJ = −40°C to +125°C, Max TJ = 150°C, VCC = 12 V) Description Test Condition Symbol Min Typ Max Unit VREF(CV) 2.38 2.48 2.58 V GEA 40 50 60 mS CONSTANT VOLTAGE SECTION Internal voltage reference for constant voltage regulation TJ = −40°C to 125°C CV Error amplifier Gain Error amplifier current capability VREFX=VREF COMP pin lower clamp voltage COMP pin higher clamp voltage ZCD pin voltage below which the CV OTA is boosted IEA ±60 mA VCV(clampL) 0.6 V VCV(clampH) VREF(CV)* 80% Vboost(CV) Error amplifier current capability during boost phase IEAboost ZCD slow OVP threshold (Vref(CV)*115%) VOVP1 Switching period during slow OVP Tsw(OVP1) ZCD voltage at which slow OVP is exit (Vref(CV)*105%) VOVP1rst ZCD fast OVP threshold (Vref(CV)*130%) 4.1 1.88 2 V 2.12 ±140 2.69 2.87 V mA 3.04 1.5 V ms 2.625 V VOVP2 3.29 3.43 3.57 V LINE FEED FORWARD VVS to ICS(offset) conversion ratio KLFF 0.153 0.185 0.217 mA/V Offset current maximum value VHV > (450 V or 500 V) Ioffset(MAX) 76 95 114 mA Line feed−forward current DRV high, VHV = 200 V IFF 32 37 42 mA Threshold for line range detection VHV increasing VHV increases VHL 252 264 276 V Threshold for line range detection VHV decreasing VHV decreases VLL 241 253 265 V tHL(blank) 15 25 35 ms VALLEY LOCKOUT SECTION Blanking time for line range detection Valley thresholds (expressed as a percentage of VREF) 1st to 2nd valley transition at LL and 2nd to 3rd valley HL, VREF decr. 2nd to 1st valley transition at LL and 3rd to 2nd valley HL, VREF incr. 2nd to 3rd valley transition at LL and 3rd to 4th valley HL, VREF decr. 3rd to 2nd valley transition at LL and 4th to 3rd valley HL, VREF incr. 3rd to 4th valley transition at LL and 4th to 5th valley HL, VREF decr. 4th to 3th valley transition at LL and 5th to 4th valley HL, VREF incr. 4th to 5th valley transition at LL and 5th to 6th valley HL, VREF decr. 5th to 4th valley transition at LL and 6th to 5th valley HL, VREF incr. VREF decreases VREF increases VREF decreases VREF increases VREF decreases VREF increases VREF decreases VREF increases VVLY1−2/2−3 VVLY2−1/3−2 VVLY2−3/3−4 VVLY3−2/4−3 VVLY3−4/4−5 VVLY4−3/5−4 VVLY4−5/5−6 VVLY5−4/6−5 80 90 65 75 50 60 35 45 % VREF value at which the FF mode is activated VREF decreases VFFstart 25 % VREF value at which the FF mode is removed VREF increases VFFstop 35 % Added dead time VREFX = 25%VREF tFF1LL 1.4 2.0 2.6 ms Added dead time VREFX = 8% VREF tFFchg − 40 − ms FREQUENCY FOLDBACK Dead−time clamp (Maximum dead−time option C) VREFX < 1 mV tFFend 1.4 − ms Dead−time clamp (Maximum dead−time option B) VREFX < 3 mV tFFend2 − 687 − ms Dead−time clamp (Maximum dead−time option A) VREFX < 11.2 mV tFFend3 − 250 − ms DIM pin voltage for zero output current (OFF voltage) VADIM(EN) 0.475 0.5 0.525 V ADIM pin voltage for 0.5% reference voltage VADIM(MIN) 0.67 0.7 0.73 Minimum dimming level (dimming lower clamp option Y) KDIM(MIN) ADIM pin voltage for maximum output current (VREFX = 1 V) VADIM100 DIMMING SECTION 0.5 − 3.0 V % 3.1 V Dimming range VADIM(range) 2.3 V Clamping voltage for DIM pin VADIM(CLP) 6.8 V Dimming pin pull−up current source IADIM(pullup) 8 10 12 mA Current Comparator threshold for PDIM IPDIM rising IPDIM(THR) 60 70 80 mA Current Comparator threshold for PDIM IPDIM falling IPDIM(THD) 86 100 114 mA www.onsemi.com 6 NCL30386 ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25°C, VCC = 12 V, VZCD = 0 V, , VCS = 0 V) For min/max values TJ = −40°C to +125°C, Max TJ = 150°C, VCC = 12 V) Description Test Condition Symbol Min Typ Max Unit IPDIM(LIM) 510 600 690 mA VPDIM − 3 TSHDN 130 150 170 °C Thermal Shutdown Hysteresis TSHDN(HYS) − 50 – °C Threshold voltage for output short circuit or aux. winding short circuit detection VZCD(short) 0.8 1.0 1.2 V tOVLD 70 90 110 ms trecovery 3 4 5 s V DIMMING SECTION Cascode current limit for PDIM PDIM pin voltage V FAULT PROTECTION Thermal Shutdown Device switching (FSW around 65 kHz) Short circuit detection Timer VZCD < VZCD(short) Auto−recovery Timer BROWN−OUT AND LINE SENSING Brown−Out ON level (IC start pulsing) VHV increasing VHVBO(on) 104 110 116 Brown−Out OFF level (IC stops pulsing) VHV decreasing VHVBO(off) 93 99 105 BO comparators delay tBO(delay) Brown−Out blanking time 30 tBO(blank) 15 V ms 25 35 ms HV pin voltage above which the sampling of ZCD is enabled VHV decreasing VsampEN 61 V Sampling Enable comparator hysteresis VHV increasing VsampHYS 4 V TYPICAL CHARACTERISTICS 18.30 8.90 18.25 8.88 VCC(off) (V) VCC(on) (V) 18.20 18.15 18.10 8.84 8.82 8.80 18.05 18.00 −50 8.86 8.78 −25 0 25 50 75 100 125 8.76 −50 −25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 3. VCC(on) vs. Junction Temperature Figure 4. VCC(off) vs. Junction Temperature www.onsemi.com 7 125 NCL30386 28.0 1.45 27.5 1.43 1.41 27.0 VILIM (V) VCC(OVP) (V) TYPICAL CHARACTERISTICS 26.5 26.0 1.37 1.35 25.5 1.33 25.0 −50 −25 0 25 50 75 100 1.31 −50 125 −25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. VCC(OVP) vs. Junction Temperature Figure 6. VILIM vs. Junction Temperature 100 2.07 90 2.05 80 2.03 70 2.01 VCS(stop) (V) VCS(low)F (V) 1.39 60 50 1.99 1.97 40 1.95 30 1.93 20 −50 −25 0 25 50 75 100 1.91 −50 125 125 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. VCS(low)F vs. Junction Temperature Figure 8. VCS(stop) vs. Junction Temperature 144 335.5 134 334.5 114 VREF (V) tILIM (ns) 124 104 94 84 333.5 332.5 331.5 74 64 −50 −25 0 25 50 75 100 330.5 −50 125 −25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. tILIM vs. Junction Temperature Figure 10. VREF vs. Junction Temperature www.onsemi.com 8 125 NCL30386 TYPICAL CHARACTERISTICS 60 2.511 58 2.506 56 2.501 54 GEA (mS) VREF(CV) (V) 2.496 2.491 2.486 52 50 48 2.481 46 2.476 44 2.471 42 2.466 −50 −25 0 25 50 75 100 40 −50 125 −25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 11. VREF(CV) vs. Junction Temperature Figure 12. GEA vs. Junction Temperature 3.46 2.883 2.878 3.45 2.873 3.44 VOVP2 (V) VOVP1 (V) 2.868 2.863 2.858 3.43 3.42 2.853 2.848 2.843 2.838 −50 125 3.41 −25 0 25 50 75 100 3.40 −50 125 −25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 13. VOVP1 vs. Junction Temperature Figure 14. VOVP2 vs. Junction Temperature 0.190 125 37.8 37.6 0.188 37.4 KLFF (mA/V) 37.2 IFF (mA) 0.186 0.184 37.0 36.8 36.6 0.182 36.4 0.180 −50 36.0 −50 36.2 −25 0 25 50 75 100 125 −25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 15. KLFF vs. Junction Temperature Figure 16. IFF vs. Junction Temperature www.onsemi.com 9 125 NCL30386 TYPICAL CHARACTERISTICS 100.2 VHVbo(off) (V) VHVBO(on) (V) 111.2 110.7 110.2 99.7 99.2 98.7 109.7 109.2 −50 −25 0 25 50 75 100 98.2 −50 125 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 17. VHVBO(on) vs. Junction Temperature Figure 18. VHVbo(off) vs. Junction Temperature 75 0.504 74 73 IPDIM(THR) (mA) VADIM(EN) (V) 0.502 0.500 0.498 72 71 70 69 68 67 0.496 66 0.494 −50 −25 0 25 50 75 100 65 −50 125 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 19. VADIM(EN) vs. Junction Temperature Figure 20. IPDIM(THR) vs. Junction Temperature 105 104 621 616 102 IPDIM(LIM) (mA) IPDIM(THD) (mA) 103 101 100 99 98 97 611 606 601 96 95 −50 −25 0 25 50 75 100 125 596 −50 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 21. IPDIM(THD) vs. Junction Temperature Figure 22. IPDIM(LIM) vs. Junction Temperature www.onsemi.com 10 NCL30386 APPLICATION INFORMATION • Fast Over Voltage Protection: If the voltage of ZCD pin The NCL30386 implements a current−mode architecture operating in quasi−resonant mode. Thanks to proprietary circuitry, the controller is able to accurately regulate the secondary side current and voltage of the fly−back converter without using any opto−coupler or measuring directly the secondary side current or voltage. The controller provides near unity power factor correction • Quasi−Resonance Current−Mode Operation: implementing quasi−resonance operation in peak current−mode control, the NCL30386 optimizes the efficiency by switching in the valley of the MOSFET drain−source voltage. Thanks to an internal algorithm control, the controller locks−out in a selected valley and remains locked until the input voltage or the output current set point significantly changes. • Primary Side Constant Current Control: thanks to a proprietary circuit, the controller is able to take into account the effect of the leakage inductance of the transformer and allows an accurate control of the secondary side current regardless of the input voltage and output load variation • Primary Side Constant Voltage Regulation: By monitoring the auxiliary winding voltage, it is possible to regulate accurately the output voltage. The output voltage regulation is typically within ±2%. • Load Transient Compensation: Since PFC has low loop bandwidth, abrupt changes in the load may cause excessive over or under−shoot. The slow Over Voltage Protection contains the output voltage when it tends to become excessive. In addition, the NCL30386 speeds up the constant voltage regulation loop when the output voltage goes below 80% of its regulation level. • Power Factor Correction: A proprietary concept allows achieving high power factor correction and low THD while keeping accurate constant current and constant voltage control. • Line Feed−forward: allows compensating the variation of the output current caused by the propagation delay. • VCC Over Voltage Protection: if the VCC pin voltage exceeds an internal limit, the controller shuts down and waits 4 seconds before restarting pulsing. • • • • • • • • exceeds 130% of its regulation level, the controller shuts dwon and waits 4 s before trying to restart. Brown−Out: the controller includes a brown−out circuit which safely stops the controller in case the input voltage is too low. The device will automatically restart if the line recovers. Cycle−by−cycle peak current limit: when the current sense voltage exceeds the internal threshold VILIM, the MOSFET is turned off for the rest of the switching cycle. Winding Short−Circuit Protection: an additional comparator senses the CS signal and stops the controller if VCS reaches 1.5 x VILIM (after a reduced LEB of tBCS). This additional comparator is enabled only during the main LEB duration tLEB, for noise immunity reason. Output Under Voltage Protection: If a too low voltage is applied on ZCD pin for 90−ms time interval, the controllers assume that the output or the ZCD pin is shorted to ground and shutdown. After waiting 4 seconds, the IC restarts switching. Analog Dimming: the ADIM pin is dedicated to analog dimming. The minimum dimming level is fixed 0.5% of the maximum output current. If a voltage lower than VADIM(EN) is applied on the pin, the controller is disabled. PWM dimming: the PDIM pin is dedicated to PWM dimming. The controller measures the duty ratio of a signal applied to the pin and reduces the output current accordingly. The PWM dimming signal is transform into an analog signal internally, and the LED current is controlled in an analog way. Thermal Shutdown: an internal circuitry disables the gate drive when the junction temperature exceeds 150°C (typically). The circuit resumes operation once the temperature drops below approximately 100°C. Dynamic Self Supply option: the dynamic self−supply keeps the controller alive in case of low dimming. If VCC reaches VCC(off), the HV current source is turned on to charge VCC capacitor until the voltage reaches VCC(on2) without interrupting the DRV pulses. www.onsemi.com 11 NCL30386 POWER FACTOR AND CONSTANT CURRENT CONTROL The NCL30386 embeds an analog/digital block to control the power factor and regulate the output current by monitoring the ZCD, CS and HV pin voltages (signals VZCD, VHV_DIV, VCS). This circuit generates the current setpoint VCTRL_DIV and compares it to the current sense signal to turn the MOSFET off. The HV pin provides the sinusoidal reference necessary for shaping the input current. The obtained current reference is further modulated so that when averaged over a half line period, it is equal to the output current reference (VREFX). The modulation and averaging process is made internally by a digital circuit. If the HV pin properly conveys the sinusoidal shape, power factor will be close to 1. Also, the Total Harmonic Distortion (THD) will be low especially if the output voltage ripple is small. The output current will be well regulated, following the equation below: I OUT + V REFX 2N spR sense Rsense is the current sense resistor VREFX is the output current reference: VREFX = VREF if no dimming The output current reference (VREFX) is VREF unless the constant voltage mode is activated or ADIM pin voltage is below VADIM(100) or a PWM signal with a duty−cycle below 95% is applied on PDIM. ♦ ♦ CONSTANT VOLTAGE CONTROL The auxiliary winding voltage is sampled internally through the ZCD pin. A precise internal voltage reference VREF(CV) sets the voltage target for the CV loop. The sampled voltage is applied to the negative input of the CV OTA and compared to VREFCV. A type 2 compensator is needed at the CV OTA output to stabilize the loop. The COMP pin voltage modify the the output current internal reference in order to regulate the output voltage. When VCOMP ≥ 4 V, VREFX = VREF. When VCOMP < 0.6 V, VREFX = 0 V (eq. 1) Where: ♦ Nsp is the secondary to primary transformer turns ratio: Nsp = NS / NP. RZCDU ZCD VZCDsamp ZCD & signal sampling Gm COMP . Aux. RZCDL VREF(CV) OTA R1 C2 C1 Figure 23. Constant Voltage Feedback Circuit STARTUP PHASE (HV STARTUP) It is generally requested that the LED driver starts to emit light in less than 1 s and possibly within 300 ms. It is challenging since the start−up consists of the time to charge the VCC capacitor and that necessary to charge the output capacitor until sufficient current flows into the LED string. This second phase can be particularly long in dimming cases where the secondary current is a portion of the nominal one. The NCL30386/88 features a high voltage startup circuit that allows charging VCC capacitor very fast. When the power supply is first connected to the mains outlet, the internal current source is biased and charges up the VCC capacitor. When the voltage on this VCC capacitor reaches the VCC(on) level, the current source turns off. At this time, the controller is only supplied by the VCC capacitor, and the auxiliary supply should take over before VCC collapses below VCC(off). The HV startup circuitry is made of two startup current levels, IHV(start1) and IHV(start1). This helps to protect the controller against short−circuit between VCC and GND. At power−up, as long as VCC is below VCC(TH), the source delivers IHV(start1) (around 300 mA typical). Then, when VCC reaches VCC(TH), the source smoothly transitions to IHV(start2) and delivers its nominal value. As a result, in case of short−circuit between VCC and GND occurring at high line (Vin = 265 Vrms), the power dissipation will be 375 x 300u = 112 mW instead of 1.5 W if there was only one startup current level. To speed−up the output voltage rise, the following is implemented: • The digital OTA output is increased until VREF(PFC) signal reaches VREFX. Again, this is to speed−up the control signal rise to their steady state value. • At the beginning of each operating phase of a VCC cycle, the digital OTA output is set to 0. Actually, the digital OTA output is set to 0 in the case of a cold start−up or in the case of a start−up sequence following www.onsemi.com 12 NCL30386 • an operation interruption due to a fault. On the other hand, if the VCC hiccups just because the system fails to start−up in one VCC cycle (DSS option not activated), the digital OTA output is not reset to ease the second (or more) attempt. If the load is shorted, the circuit will operate in hiccup mode with VCC oscillating between VCC(off) and VCC(on) until the output under voltage protection (UVP) trips. UVP is triggered if the ZCD pin voltage does not exceed 1 V within a 90 ms operation of time. This indicates that the ZCD pin is shorted to ground or that an excessive load prevents the output voltage from rising. threshold of (VCS(stop) = 140% *VILIM) monitors the CS pin to detect a winding or an output diode short circuit. The controller shuts down if it detects 4 consecutives pulses during which the CS pin voltage exceeds VCS(stop). The controller goes into auto−recovery mode. PWM DIMMING The NCL30386 has a dedicated pin for PWM dimming. The controller directly measures the duty ratio of a PWM signal applied to PDIM. Two counters with a high frequency clock are used for this purpose. A first counter measure the high state duration of the PWM signal (ton_PDIM) and the second counter measures its period (Tsw_PDIM). A divider computes (ton_PDIM / Tsw_PDIM) and the result is directly the output current setpoint (VREFX set point). A filter is added after the digital divider to remove the ripple of the signal. A cascode configuration on PDIM pin allows decreasing the fall time of the signal. Due to this circuit, the LED current is controlled in an analog way, even if a PWM signal is used for dimming. This allows having a good PF during dimming. CYCLE−BY−CYCLE CURRENT LIMIT When the current sense voltage exceeds the internal threshold VILIM, the MOSFET is turned off for the rest of the switching cycle. WINDING AND OUTPUT DIODE SHORT−CIRCUIT PROTECTION In parallel to the cycle−by−cycle sensing of the CS pin, another comparator with a reduced LEB (tBCS ) and a VDIM_sec Ton_P IPDIM IPDIM(THD) IPDIM(THR) VPDIM_int Tsw_P Figure 24. PDIM Internal Waveforms Practically, the controller extracts the duty−cycle by measuring the current inside PDIM pin which is directly the opto coupler collector current. If PDIM pin is left open, the controller delivers 100% of Iout. If the pin is pulled down for longer than 25 ms, the controller is disabled. www.onsemi.com 13 NCL30386 ANALOG DIMMING The pin ADIM pin allows dimming the LED light using an analog signal as the control input. The DIM pin voltage is sampled by an analog to digital converter and sets the output current value accordingly. If the power supply designer applies an analog signal varying from VDIM(EN) to VDIM100 to the DIM pin, the output current will increase or decrease proportionally to the voltage applied. For VDIM = VDIM100, the power supply delivers the maximum output current (VREFX = VREF). If a voltage lower than VADIM(MIN) is applied to ADIM pin, the output current is clamped to 0.5% of the maximum output current depending on the controller option If a voltage lower than VADIM(EN) is applied to the DIM pin, the DRV pulses are disabled. The DIM pin is pulled up internally by a small current source or resistor. Thus, if the pin is left open, the controller is able to start. Note: • Interaction between ADIM and PDIM: if ADIM and PDIM are both used at the same time, the resulting dimming set point if a multiplication of VADIM and the duty−ratio of PDIM signal. • If the dimming curve option S is selected, a square relationship is implemented between the dimming signal and the output current setpoint. VREF 100% VREF L option S option 0.5% VREF VADIM (EN) VADIM 100 VADIM (MIN) Figure 25. ADIM Pin Dimming Curves www.onsemi.com 14 VADIM NCL30386 VALLEY LOCKOUT Quasi−Square wave resonant systems have a wide switching frequency excursion. The switching frequency increases when the output load decreases or when the input voltage increases. The switching frequency of such systems must be limited. The NCL30386 changes valley as VREFX decreases and as the input voltage increases and as the output current setpoint is varied during dimming. This limits the frequency excursion. By default, when the output current is not dimmed, the controller operates in the first valley at low line and in the second valley at high line. HV pin voltage for valley change value at which the controller changes valley (Iout decreasing) REFX 0 100% −−LL −− 230 V −−HL −− 400 V 1st 2nd 2nd 3rd rd th 80% 100% 85% 70% 3 50% 35% 4 4th 5th 5th 6th 25% 55% 40% 30% FF mode 0% 0 FF mode −−LL −− 240 V −−HL −− 400 V HV pin voltage for valley change Figure 26. TABLE II: Valley Selection www.onsemi.com 15 0% Iout increase 65% Iout decreases VREFX value at which the controller changes valley (Iout increasing) NCL30386 ZERO CROSSING DETECTION BLOCK The ZCD pin allows detecting when the drain−source voltage of the power MOSFET reaches a valley. A valley is detected when the ZCD pin voltage crosses below the 55 mV internal threshold. At startup or in case of extremely damped free oscillations, the ZCD comparator may not be able to detect the valleys. To avoid such a situation, the NCL30386 a Time−Out circuit that generates pulses if the voltage on ZCD pin stays below the 55 mV threshold for 6.5 ms. The Time−out also acts as a substitute clock for the valley detection and simulates a missing valley in case of too damped free oscillations. At startup, the output voltage reflected on the auxiliary winding is low. Because of the ZCD resistor bridge setting the constant voltage regulation target, the voltage on the ZCD pin is very low and the ZCD comparator might be unable to detect the valleys. In this condition, setting the DRV Latch with the 6.5−ms time−out leads to a continuous conduction mode operation (CCM) at the beginning of the soft−start. This CCM operation only last a few cycles until the voltage on ZCD pin becomes high enough and trips the ZCD comparator. V ZCD 3 4 high V ZCD(THD) The 3rd valley is validated 14 2 nd , 3 rd low 12 The 2nd valley is detected By the ZCD comparator The 3rd valley is not detected by the ZCD comp high low 15 ZCD comp high low 16 Time−out circuit adds a pulse to account for the missing 3rd valley TimeOut high low 17 Clk Figure 27. ZCD Time−out Chronograms ZCD PIN OVER VOLTAGE PROTECTION. Because of the power factor correction, it is necessary to set the crossover frequency of the CV loop very low (target 10 Hz, depending on power stage phase shift). Because the loop is slow, the output voltage can reach high value during startup or during an output load step. It is necessary to limit the output voltage excursion. For this, the NCL30388 features a slow over voltage protection (slow OVP) and a fast over voltage protection (fast OVP) on ZCD pin. If the ZCD pin or the auxiliary winding happen to be shorted the time−out function would normally make the controller keep switching and hence lead to improper regulation of the LED current. The Under Voltage Protection (UVP) is implemented to avoid these scenarios: a secondary timer starts counting when the ZCD voltage is below the VZCD(short) threshold. If this timer reaches 90 ms, the controller detects a fault and enters the auto−recovery fault mode. www.onsemi.com 16 NCL30386 Slow OVP Fast OVP If ZCD voltage exceed VZCD(OVP1) for 4 consecutive switching cycles, the controller stops switching during 1.4 ms. After 1.4 ms, the controller initiates a new DRV pulse to refresh ZCD sampling voltage. If VZCD is still too high (VZCD > 110%VREF(CV)), the controller continues to switch with a 1.4 ms period. The controller resumes its normal operation when VZCD < 110%VREF(CV). If ZCD voltage exceeds VZCD(OVP2) (130% of VREF(CV)) for 4 consecutive switching cycles (slow OVP not triggered) or for 2 switching cycles if the slow OVP has already been triggered, the controller detects a fault and starts the auto−recovery fault mode (cf: Protections Section) LINE FEEDFORWARD HV vDD vVS CS I CS(offset) KLFF RLFF R sense Q_drv + 25 ms Blanking − BO_NOK 1 V / 0.9 V Figure 28. Line Feed−Forward and Brown−out Schematic PROTECTIONS The circuit incorporates a large variety of protections to make the LED driver very rugged. Among them, we can list: • Fault of the GND connection If the GND pin is properly connected, the supply current drawn from the positive terminal of the VCC capacitor, flows out of the GND pin to return to the negative terminal of the VCC capacitor. If the GND pin is not connected, the circuit ESD diodes offer another return path. The accidental non connection of the GND pin can hence be detected by detecting that one of this ESD diode is conducting. Practically, the ESD diode of CS pin is monitored. If such a fault is detected for 200 ms, the circuit stops generating DRV pin. • Output short circuit situation (Output Under Voltage Protection) Overload is detected by monitoring the ZCD pin voltage: if it remains below VZCD(short) for 90 ms, an output short circuit is detected and the circuit stops generating pulses for 4 s. When this 4 s delay has elapsed, the circuit attempts to restart. • ZCD pin incorrect connection: The line voltage is sensed by the HV pin and converted into a current. By adding an external resistor in series between the sense resistor and the CS pin, a voltage offset proportional to the line voltage is added to the CS signal. The offset is applied only during the MOSFET on−time in order to not influence the detection of the leakage inductance reset. The offset is always applied even at light load in order to improve the current regulation at low output load. BROWN−OUT In order to protect the supply against a very low input voltage, the NCL30386 features a brown−out circuit with a fixed ON/OFF threshold. The controller is allowed to start if a voltage higher than 100 V is applied to the HV pin and shuts−down if the HV pin voltage decreases and stays below 9 0 V for 25 ms typical. Exiting a brown−out condition overrides the hiccup on VCC (VCC does not wait to reach VCC(off)) and the IC immediately goes into startup mode. www.onsemi.com 17 NCL30386 • Die Over Temperature (TSD) If the ZCD pin grounded, the circuit will detect an output short circuit situation when 90−ms delay has elapsed. ♦ A 200 kW resistor pulls down the ZCD pin so that the output short circuit detection trips if the ZCD pin is not connected (floating). Winding or Output Diode Short Circuit protection The circuit detects this failure when 4 consecutive DRV pulses occur within which the CS pin voltage exceeds (VCS(stop)=140% *VILIM). In this case, the controller enters auto−recovery mode (4−s operation interruption between active bursts). VCC Over Voltage Protection The circuit stops generating pulses if the VCC exceeds VCC(OVP) and enters auto−recovery mode. This feature protects the circuit if output LEDs happen to be disconnected. ZCD fast OVP If ZCD voltage exceeds VZCD(OVP2) for 4 consecutive switching cycles (slow OVP not triggered) or for 2 switching cycles if the slow OVP has already been triggered, the controller detects a fault and enters auto−recovery mode (4 s operation interruption between active bursts). ♦ • • • The circuit stops operating if the junction temperature (TJ) exceeds 150°C typically. The controller remains off until TJ goes below nearly 100°C. • Brown−Out Protection (BO) The circuit prevents operation when the line voltage is too low to avoid an excessive stress of the LED driver. Operation resumes as soon as the line voltage is high enough and VCC is higher than VCC(on). • CS pin short to ground The CS pin is checked at start−up (cold start−up or after a brown−out event). A current source (Ics(short)) is applied to the pin and no DRV pulse is generated until the CS pin exceeds Vcs(low). Ics(short) and Vcs(low) are 500 mA and 60 mV typically (VCS rising). The typical minimum impedance to be placed on the CS pin for operation is then 120 W. In practice, it is recommended to place more than 250 W to take into account possible parametric deviations Also, along the circuit operation, the CS pin could happen to be grounded. If it is grounded, the MOSFET conduction time is limited by the maximum on−time. If such an event occurs, a new pin impedance test is made. ORDERING TABLE OPTION DSS Maximum dead−time Max. On− time VREF ZCD blanking Dimming Curve Line Range Detector Dimming Clamp Y N A B C U V A B A B L S Y N Y N OPN # On Off 250 ms 687 ms 1.4 ms 250 mV 333 mV 20 ms 33 ms 1 ms 1.5 ms Linear Square On Off On Off NCL30386A1 x x x x x x x x NCL30386A2 x x x x x x NCL30386B1 x x x x x NCL30386B2 x x x x x x x x x x x x x ORDERING INFORMATION2 Marking Package type Shipping† NCL30386A1DR2G L30386A1 SOIC9 COMP EPX 0.5P PBF 2500 / Tape & Reel NCL30386A2DR2G L30386A2 SOIC9 COMP EPX 0.5P PBF 2500 / Tape & Reel NCL30386B1DR2G L30386B1 SOIC9 COMP EPX 0.5P PBF 2500 / Tape & Reel NCL30386B2DR2G L30386B2 SOIC9 COMP EPX 0.5P PBF 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 18 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−9 NB CASE 751BP ISSUE A 9 1 SCALE 1:1 DATE 21 NOV 2011 2X 0.10 C A-B D D A 0.20 C 2X 4 TIPS F 0.10 C A-B 10 6 H E 1 5 0.20 C 9X B 5 TIPS L2 b 0.25 A3 L DETAIL A M C SEATING PLANE C A-B D TOP VIEW 9X h 0.10 C 0.10 C X 45 _ M A e A1 C SIDE VIEW SEATING PLANE DETAIL A END VIEW 1 6.50 9X 1.18 1 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON52301E SOIC−9 NB MILLIMETERS MIN MAX 1.25 1.75 0.10 0.25 0.17 0.25 0.31 0.51 4.80 5.00 3.80 4.00 1.00 BSC 5.80 6.20 0.37 REF 0.40 1.27 0.25 BSC 0_ 8_ 9 1.00 PITCH 0.58 DIM A A1 A3 b D E e H h L L2 M GENERIC MARKING DIAGRAM* RECOMMENDED SOLDERING FOOTPRINT* 9X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.10mm TOTAL IN EXCESS OF ’b’ AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15mm PER SIDE. DIMENSIONS D AND E ARE DETERMINED AT DATUM F. 5. DIMENSIONS A AND B ARE TO BE DETERMINED AT DATUM F. 6. A1 IS DEFINED AS THE VERTICAL DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. XXXXX ALYWX G XXXXX = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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