NCN2612BMTTWG

NCN2612BMTTWG

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    WFQFN56_EP

  • 描述:

    ICTXRX1CHANUSB56WQFN

  • 数据手册
  • 价格&库存
NCN2612BMTTWG 数据手册
NCN2612B 6-Channel Differential 1:2 Switch for PCIe 2.0 and Display Port 1.1 The NCN2612B is a 6−Channel differential SPDT switch designed to route PCI Express Gen2 and/or DisplayPort 1.1a signals. Due to the ultra−low ON−state capacitance (2.1 pF typ) and resistance (8 W typ), this switch is ideal for switching high frequency signals up to a signal bit rate (BR) of 5 Gbps. This switch pinout is designed to be used in BTX form factor desktop PCs and is available in a space−saving 5x11x0.75 mm WQFN56 package. The NCN2612B uses 80% less quiescent power than other comparable PCIe switches. http://onsemi.com MARKING DIAGRAM NCN2612B AWLYYWWG WQFN56 CASE 510AK Features BTX Pinout VDD Power Supply from 3 V to 3.6 V Low Supply Current: 250 mA typ 6 Differential Channels, 2:1 MUX/DEMUX Compatible with Display Port 1.1a & PCIe 2.0 Data Rate: Supports 5 Gbps Low RON Resistance: 8 W typ Low CON Capacitance: 2.1 pF Space Saving, Small WQFN−56 Package This is a Pb−Free Device A WL YY WW G Typical Applications D1 +/− D2 +/− PCIe BUFF1 IN_0 +/− PCIe BUFF2 IN_1 +/− IN_2 +/− IN_3 +/− D3 +/− HPD1/HPD2 AUX +/− NCN2612B X +/− OUT +/− AUX Package Shipping† NCN2612BMTTWG WQFN56 (Pb−Free) 2000 / Tape & Reel Tx0 +/− Tx1 +/− Tx2 +/− Tx3 +/− Rx0 +/− Rx1 +/− PCIe Graphics (PEG) Connector D0 +/− Graphics and Memory Controller Hub (GMCH) PCIe IN Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. • Notebook Computers • Desktop Computers • Server/Storage Networks PCI Express PCIe BUFF3 Graphics (PEG) PCIe BUFF4 = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package ORDERING INFORMATION Display Port Connector • • • • • • • • • • 1 Figure 1. Application Schematic © Semiconductor Components Industries, LLC, 2011 August, 2011 − Rev. 0 1 Publication Order Number: NCN2612B/D NCN2612B IN_0+ D0+ IN_0− D0− IN_1+ D1+ IN_1− D1− IN_2+ D2+ IN_2− D2− IN_3+ D3+ IN_3− D3− Tx0+ Tx0− Tx1+ Tx1− Tx2+ Tx2− Tx3+ Tx3− OUT+ AUX+ OUT− AUX− X+ HPD1 X− HPD2 Rx0+ Rx0− Rx1+ Rx1− SEL Logic Control LE Figure 2. NCN2612B Block Diagram TRUTH TABLE (SEL Control) Function TRUTH TABLE (Latch Control) SEL LE PCI Express Gen2 Path is Active (Tx, Rx) L L Respond to Changes on SEL Digital Video Port is Active (D, HPD, AUX) H H Latched http://onsemi.com 2 Internal Mux Select 49 GND 50 VDD 51 D1− 52 D1+ 53 D0− 54 D0+ 55 VDD 56 GND NCN2612B GND 1 48 GND SEL 2 47 D2+ LE 3 46 D2− IN_0+ 4 45 D3+ IN_0− 5 44 D3− VDD 6 43 Tx0+ IN_1+ 7 42 Tx0− IN_1− 8 41 Tx1+ IN_2+ 9 40 Tx1− Exposed Pad on Underside (solder to external Gnd) IN_2− 10 GND 11 IN_3+ 12 39 Tx2+ 38 Tx2− 37 Tx3+ IN_3− 13 36 Tx3− 14 35 GND OUT− 15 34 VDD OUT+ GND 16 33 AUX+ VDD 17 32 AUX− X+ 18 31 HPD1 X− 19 30 HPD2 29 GND Figure 3. Pinout (Top View) http://onsemi.com 3 GND 28 VDD 27 Rx0+ 26 Rx0− 25 Rx1+ 24 Rx1− 23 VDD 22 20 GND 21 GND NCN2612B PIN FUNCTION AND DESCRIPTION Pin Name 6, 17, 22, 27, 34,50, 55 VDD DC Supply, 3.3 V $10% Description 1, 11, 16, 20, 21, 28, 29, 35, 48, 49, 56 GND Power Ground. Exposed Pad − 2 SEL 3 LE 4 IN_0+ Differential input from GMCH PCIE outputs. IN_0+ makes a differential pair with IN_0−. 5 IN_0− Differential input from GMCH PCIE outputs. IN_0− makes a differential pair with IN_0+. 7 IN_1+ Differential input from GMCH PCIE outputs. IN_1+ makes a differential pair with IN_1−. 8 IN_1− Differential input from GMCH PCIE outputs. IN_1− makes a differential pair with IN_1+. The exposed pad on the backside of package is internally connected to Gnd. Externally the exposed pad should also be user−connected to GND. SEL controls the mux through a flow−through latch. Do not float this pin. SEL = 0 for PCIE Mode; SEL = 1 for DP Mode LE controls the latch gate. Do not float this pin. 9 IN_2+ Differential input from GMCH PCIE outputs. IN_2+ makes a differential pair with IN_2−. 10 IN_2− Differential input from GMCH PCIE outputs. IN_2− makes a differential pair with IN_2+. 12 IN_3+ Differential input from GMCH PCIE outputs. IN_3+ makes a differential pair with IN_3−. 13 IN_3− Differential input from GMCH PCIE outputs. IN_3− makes a differential pair with IN_3+. 14 OUT+ Pass−through output from AUX+ input when SEL = 1. Pass−through output from Rx0+ input when SEL = 0. 15 OUT− Pass−through output from AUX− input when SEL = 1. Pass−through output from Rx0− input when SEL = 0. 18 X+ X+ is an analog pass−through output corresponding to Rx1+. 19 X− X− is an analog pass−through output corresponding to the Rx1− input. The path from Rx1− to X− must be matched with the path from Rx1+ to X+. X+ and X− form a differential pair when the pass−through mux mode is selected. 23 Rx1− Differential input from PCIE connector or device. Rx1− makes a differential pair with Rx1+. Rx1− is passed through to the X− pin on the path that matches the Rx1+ to X+ pin. 24 Rx1+ Differential input from PCIE connector or device. Rx1+ makes a differential pair with Rx1−. Rx1+ is passed through to the X+ pin when SEL = 0. 25 Rx0− Differential input from PCIE connector or device. Rx0− makes a differential pair with Rx0+. Rx0− is passed through to the OUT− pin when SEL = 0. 26 Rx0+ Differential input from PCIE connector or device. Rx0+ makes a differential pair with Rx0−. Rx0+ is passed through to the OUT+ pin when SEL = 0. 30 HPD2 Negative low frequency HPD input handshake protocol signal (normally not connected). 31 HPD1 Positive low frequency HPD input handshake protocol signal. 32 AUX− Differential input from HDMI/DP connector. AUX− makes a differential pair with AUX+. AUX− is passed through to the OUT− pin when SEL = 1. 33 AUX+ Differential input from HDMI/DP connector. AUX+ makes a differential pair with AUX−. AUX+ is passed through to the OUT+ pin when SEL = 1. 37, 36 Tx3+, Tx3− Analog pass−through output#2 corresponding to IN_3+ and IN_3− when SEL = 0. 39, 38 Tx2+, Tx2− Analog pass−through output#2 corresponding to IN_2+ and IN_2− when SEL = 0. 41, 40 Tx1+, Tx1− Analog pass−through output#2 corresponding to IN_1+ and IN_1− when SEL = 0. 43, 42 Tx0+, Tx0− Analog pass−through output#2 corresponding to IN_0+ and IN_0− when SEL = 0. 45, 44 D3+, D3− Analog pass−through output#1 corresponding to IN_3+ and IN_3−, when SEL = 1. 47, 46 D2+, D2− Analog pass−through output#1 corresponding to IN_2+ and IN_2−, when SEL = 1. 52, 51 D1+, D1− Analog pass−through output#1 corresponding to IN_1+ and IN_1−, when SEL = 1. 54, 53 D0+, D0− Analog pass−through output#1 corresponding to IN_0+ and IN_0−, when SEL = 1. http://onsemi.com 4 NCN2612B MAXIMUM RATINGS Symbol Rating Unit Power Supply Voltage Parameter VDD −0.5 to 5.3 VDC Input/Output Voltage Range of the Switch (Tx, Rx, D, HPD, AUX, IN_, OUT, X) VIS −0.5 to VDD + 0.3 VDC Selection Pin Voltages (SEL and LE) VIN −0.5 to VDD + 0.3 VDC Continuous Current Through One Switch Channel IIS ±120 mA Maximum Junction Temperature (Note 1) TJ 150 °C Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Range Tstg −65 to +150 °C Thermal Resistance, Junction−to−Air (Note 2) RqJA 37 °C/W ILU ±100 mA Human Body Model (HBM) ESD Rating (Note 4) ESD HBM 7000 V Machine Model (MM) ESD Rating (Note 4) ESD MM 400 V MSL Level 1 − Latch−up Current (Note 3) Moisture Sensitivity (Note 5) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded. 2. This parameter is based on EIA/JEDEC 51−7 with a 4−layer PCB, 80 mm x 80 mm, two 1oz Cu material internal planes and top planes of 2oz Cu material. 3. Latch up Current Maximum Rating: ±100 mA per JEDEC standard: JESD78. 4. This device series contains ESD protection and passes the following tests: Human Body Model (HBM) ±7.0 kV per JEDEC standard: JESD22−A114 for all pins. Machine Model (MM) ±400 V per JEDEC standard: JESD22−A115 for all pins. 5. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A. http://onsemi.com 5 NCN2612B ELECTRICAL CHARACTERISTICS (VDD = +3.3V ±10%, TA = −40°C to +85°C, unless otherwise noted. All Typical values are at VDD = +3.3 V, TA = +25°C, unless otherwise noted.) Characteristics Symbol Conditions Min Typ Max Unit POWER SUPPLY VDD Supply Voltage Range IDD Power Supply Current 3.0 VDD = 3.6 V, VIN = GND or VDD 3.3 3.6 V 250 350 mA 1.2 V DATA SWITCH PERFORMANCE (for both PCIe and Display Port applications, unless otherwise noted) VIS Data Input/Output Voltage Range 0 RON On Resistance (Tx, Rx) VDD = 3 V, VIS = 0 V to 1.2 V, IIS = 15 mA 8.0 13 W RON On Resistance (D, HPD, AUX) VDD = 3 V, VIS = 0 V to 1.2 V, IIS = 15 mA 9.0 13 W RON(flat) On Resistance Flatness VDD = 3 V, VIS = 0 V to 1.2 V, IIS = 15 mA (Note 6) 0.1 1.24 W DRON On Resistance Matching (Tx, Rx) VDD = 3 V, VIS = 0 V, IIS = 15 mA 0.35 W DRON On Resistance Matching (D, HPD, AUX) VDD = 3 V, VIS = 0 V, IIS = 15 mA 0.35 W pF CON On Capacitance f = 1 MHz, Switch On, Open Output 2.1 COFF Off Capacitance f = 1 MHz, Switch Off 1.6 pF ION On Leakage Current (IN_/ X/OUT) VDD = 3.6 V, VIN_ = Vx = VOUT = 0 V, 1.2 V; Switch On to D/HPD/AUX or Tx/Rx; outputs unconnected −1 +1 mA IOFF Off Leakage Current (D/Tx/HPD/Rx/AUX) VDD = 3.6 V, VIN_ = VX_ = VOUT_ = 0 V, 1.2 V; Switch Off; VD = VHPD = VAUX or VD = VHPD = VAUX set to 1.2 V, 0 V −1 +1 mA V CONTROL LOGIC CHARACTERISTICS (SEL and LE pins) VIL Off voltage input 0 0.8 VIH High voltage input 2 VDD V IIN Off voltage input −1 +1 mA CIN High voltage input VIN = 0 V or VDD f = 1 MHz 1 pF 5 Gbps f = 100 MHz −0.7 dB f = 1.35 GHz −1.3 f = 2.5 GHz −1.9 f = 3.0 GHz −1.9 f = 100 MHz −54 f = 1.35 GHz −30 f = 2.5 GHz −24 f = 3.0 GHz −22 f = 5.0 GHz −17 f = 100 MHz −50 f = 1.35 GHz −32 f = 2.5 GHz −27 f = 3.0 GHz −25 f = 5.0 GHz −25 DYNAMIC CHARACTERISTICS BR Signal Data Rate DIL Differential Insertion Loss DISO DCTK DRL Differential Off Isolation Differential Crosstalk Differential Return Loss f = 100 MHz −20 f = 1.35 GHz −14 f = 2.5 GHz −10 f = 3.0 GHz −6 6. Guaranteed by characterization and/or design. http://onsemi.com 6 dB dB dB NCN2612B SWITCHING CHARACTERISTICS (VDD = +3.3 V, TA = 25°C, unless otherwise specified) Symbol tb−b tch−ch Characteristics Bit−to−bit skew Channel−to−channel skew Conditions Min Typ Max Unit Within the same differential pair 7 ps Maximum skew between all channels 55 ps SELECTION PINS SWITCHING CHARACTERISTICS (VDD = +3.3 V, TA = 25°C, unless otherwise specified) Symbol Characteristics Conditions TSELON SEL to Switch turn ON time VIS = 1 V, RL = 50 W, VLE = VDD, CL = 100 pF 9.5 ns TSELOFF Min Typ Max Unit SEL to Switch turn OFF time VIS = 1 V, RL = 50 W, VLE = VDD, CL = 100pF 5 ns TSET LE setup time SEL to LE VIS = 1 V, RL = 50 W, VLE = VDD, CL = 100 pF 1 ns THOLD LE hold time LE to SEL VIS = 1 V, RL = 50 W, VLE = VDD, CL = 100 pF 1 ns http://onsemi.com 7 NCN2612B TYPICAL OPERATING CHARACTERISTICS Figure 5. Eye Diagram for DisplayPort at 2.7 Gbps, 340 mVpp Differential Swing (Minimum Case) 0 0 −10 −10 −20 −20 −30 MAGNITUDE (dB) MAGNITUDE (dB) Figure 4. Eye Diagram for PCI Express at 5 Gbps, 800 mVpp Differential Swing (Minimum Case) −40 −50 −60 −70 −80 −30 −40 −50 −60 −70 −80 −90 −100 10000000 100000000 1E+09 1E+10 −90 10000000 100000000 FREQUENCY (Hz) 0 12 −4 11 −12 −16 −20 −24 −28 10000000 100000000 1E+09 1E+10 Figure 7. Differential Off Isolation RON, ON RESISTANCE (W) MAGNITUDE (dB) Figure 6. Differential Crosstalk −8 1E+09 FREQUENCY (Hz) 1E+10 VCC=3.0 VCC=3.3 10 VCC=3.6 9 8 7 6 5 0 0.5 1 VIS (V) FREQUENCY (Hz) Figure 8. Differential Return Loss Figure 9. RON vs. VIS http://onsemi.com 8 1.5 2 NCN2612B PARAMETER MEASUREMENT INFORMATION Figure 10. Differential Insertion Loss (SDD21) and Differential Return Loss (SDD11) Figure 11. Differential Off Isolation (SDD21) Figure 12. Differential Crosstalk (SDD21) Figure 13. Bit−to−Bit and Channel−to−Channel Skew tskew = |tPLH1-tPLH2| or |tPHL1-tPHL2| Figure 14. tON and tOFF Figure 16. On State Leakage Figure 15. Off State Leakage http://onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WQFN56 5x11, 0.5P CASE 510AK−01 ISSUE A SCALE 2:1 A B D ÉÉÉ ÉÉÉ ÉÉÉ PIN ONE LOCATION L DATE 02 MAR 2010 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSIONS: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L L1 DETAIL A ALTERNATE CONSTRUCTIONS E DIM A A1 A3 b D D2 E E2 e K L L1 ÉÉ ÉÉ EXPOSED Cu MOLD CMPD DETAIL B 0.15 C ALTERNATE CONSTRUCTION TOP VIEW 0.15 C DETAIL B (A3) 0.10 C 0.08 C SIDE VIEW NOTE 4 A A1 C RECOMMENDED SOLDERING FOOTPRINT GENERIC MARKING DIAGRAM* 5.30 XXXXXXXX XXXXXXXX AWLYYWWG SEATING PLANE 56X 0.63 2.50 0.10 C A B D2 DETAIL A 56X L 1 0.10 C A B 8.50 11.30 PKG OUTLINE 1 0.50 PITCH 56 e 56X e/2 BOTTOM VIEW DOCUMENT NUMBER: DESCRIPTION: XXXXX A WL YY WW G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. E2 K MILLIMETERS MIN MAX 0.70 0.80 −−− 0.05 0.20 REF 0.20 0.30 5.00 BSC 2.30 2.50 11.00 BSC 8.30 8.50 0.50 BSC 0.20 MIN 0.30 0.50 −−− 0.15 b 0.10 C A B 0.05 C 56X 0.35 DIMENSIONS: MILLIMETERS NOTE 3 98AON45390E WQFN56 5x11, 0.5P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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