NCN7200MTTWG

NCN7200 Data Switch, Gigabit Ethernet LAN, with 2:1 Mux/ DeMux and Power-Down Feature http://onsemi.com The NCN7200 is pin−compatible to the PI3L720ZHE and comes in a 42−pin WQFN package (3.5 mm x 9 mm x 0.5 mm Pitch). The NCN7200 is an 8−channel, bidirectional switch with a power shutdown feature that puts all outputs in a high−impedance state. The switch is compatible with 10/100/1000 Base−T Ethernet standards. The device has 3 additional lines for status indicator LEDs which are switched together with the Ethernet pairs. Features • • • • • • • • MARKING DIAGRAM NCN7200 AWLYYWWG 1 WQFN42 CASE 510AP 2:1 Mux/ DeMux LAN Switch Three Extra Channels Facilitate LED Switching Fully Specified for Power Supply Range: 3 V to 3.6 V Powerdown Feature Conserves Energy ESD Protection ♦ 8 kV HBM (Human Body Model, I/O to GND) ♦ 10 kV Contact Discharge (IEC61000−4−2) Low Crosstalk: −70 dB Pin−to−Pin Replacement for PI3L720ZHE This is a Pb−Free Device A WL YY WW G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package ORDERING INFORMATION Typical Applications • Routes signals for 10/100/1000 Mbps Ethernet • Facilitates Docking System by Interfacing One Controller to Dual See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. Connectors © Semiconductor Components Industries, LLC, 2011 March, 2011 − Rev. 2 1 Publication Order Number: NCN7200/D NCN7200 A0+ B0+ A0− B0− C0+ . . . C0− . . . A3+ B3+ A3− B3− C3+ C3− LEDA0 LEDB0 LEDC0 LEDA1 LEDB1 LEDC1 LEDA2 LEDB2 LEDC2 SEL PD POWER DOWN Figure 1. Detailed Block Diagram TRUTH TABLE PD SEL Function L L AX to BX; LEDAX to LEDBX L H AX to CX; LEDAX to LEDCX H X Hi−Z http://onsemi.com 2 LEDA2 LEDB2 LEDC2 VDD 42 41 40 39 NCN7200 VDD 1 38 B0+ A0+ 2 37 B0− 3 36 C0+ VDD 4 35 C0− PD 5 34 B1+ A1+ 6 33 B1− A1− 7 32 C1+ VDD 8 31 C1− A2+ 9 30 VDD A2− 10 29 B2+ A3+ 11 28 B2− A3− 12 27 C2+ SEL 13 26 C2− VDD 14 25 B3+ LEDA0 15 24 B3− LEDA1 16 23 C3+ LEDB0 17 22 C3− 20 21 LEDC1 VDD 19 LEDC0 18 Exposed Pad on Underside (Connect to GND) LEDB1 A0− Figure 2. Pin Description (Top View) http://onsemi.com 3 NCN7200 PIN DESCRIPTION Pin Name Description AX+, AX− Port A DeMux I/O BX+, BX− Port B Mux I/O CX+, CX− Port C LED Mux I/O GND Ground LEDZX LED I/O PD Powerdown, Active high, with internal pulldown resistor SEL Select VDD Power MAXIMUM RATINGS Value Unit Storage Temperature Description −65 to +150 °C Supply Voltage to Ground Potential −0.5 to +4.0 V DC Input Voltage −0.5 to +5.5 V DC Output Current (Note 1) 120 mA Power Dissipation (Note 1) 0.5 W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Continuous short−circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45 mA over long term may adversely affect reliability. Shorting output to either V+ or V− will adversely affect reliability. GIGABIT ETHERNET LAN SWITCH WITH 2:1 MUX/ DEMUX AND POWER DOWN FEATURE (Min / Max values are at VDD = 3.3 V ±10%, TA = −40°C to +85°C. Typ values are at VDD = 3.3 V and TA = 25°C) Symbol Description Test Conditions Min Typ Max Unit 3.0 3.3 3.6 V POWER SUPPLY CHARACTERISTICS (Note 2) VDD IDD−Standby IDD−Active IDD−PD Power DC Supply Voltage Quiescent Power Supply Current VDD = 3.6 V, VIN = GND or VDD 0.38 0.45 mA Active Power Supply Current VDD = 3.6 V, VIN = VDD or GND 1.0 1.5 mA PD = 1, VDD = 3.6 V, VIN = VDD or GND 0.13 0.16 mA Power Down Current 2. Active power represents normal data communication. Standby power is when the device is enabled for operation but there is no LAN traffic (cable not connected). Power down current is the minimum power state used when not connected and mobile. 3. Measured by the voltage drop between A and B pins at indicated current through the switch. ON resistance is determined by the lower of the voltages on the two (A & B) pins. 4. Guaranteed by design and/or characterization. 5. The bus switch contributes no propagational delay other than the RC delay of the ON resistance of the switch and the load capacitance. The time constant for the switch alone is of the order of 0.25 ns for 10 pF load. Since this time constant is much smaller than the rise/fall times of typical driving signals, it adds very little propagational delay to the system. Propagational delay of the bus switch when used in a system is determined by the driving circuit on the driving side of the switch and its interactions with the load on the driven side. http://onsemi.com 4 NCN7200 GIGABIT ETHERNET LAN SWITCH WITH 2:1 MUX/ DEMUX AND POWER DOWN FEATURE (Min / Max values are at VDD = 3.3 V ±10%, TA = −40°C to +85°C. Typ values are at VDD = 3.3 V and TA = 25°C) Symbol Description Test Conditions Min Typ Max Unit CONTROL LOGIC (SEL AND PD PINS) DC ELECTRICAL CHARACTERISTICS FOR 1000 BASE−T ETHERNET SWITCHING VIH Input HIGH Voltage Guaranteed HIGH level 2.0 VIL Input LOW Voltage Guaranteed LOW level −0.5 VIK Clamp Diode Voltage VDD = Max, IIN = −18 mA V 0.8 −0.7 −1.0 IIHSEL Input HIGH Current (SEL) VDD = Max, VIN = VDD ±0.1 IIHPD Input High Current (PD) VDD = Max, VIN = VDD ±1.2 Input LOW Current VDD = Max, VIN = GND ±0.1 VDD = 0 V, VIN = 0 V to VDD ±0.1 IIL IOFF Off−Leakage Current (SEL) A DATA PATH (AX TO BX, CX PINS) DC ELECTRICAL CHARACTERISTICS FOR 1000 BASE−T ETHERNET SWITCHING VDD = Min, 1.5 V < VIN < VDD, ITN = −40 mA 2.0 RFLAT(ON) On−Resistance Flatness (Note 3) VDD = Min, VIN @ 1.5 V and VDD, ITN = −40 mA 0.3 RON On−Resistance match from center ports to any other port (Note 3) VDD = Min, 1.5 V < VIN < VDD, ITN = −40 mA 0.5 ION On Leakage Current (AX) VDD = 3.6 V, VAX = 0 V or VDD, VOUT = Float −0.1 +0.1 A IOFF Off Leakage Current (AX/BX/CX) VDD = 3.6 V, VIN = 0 V or VDD, VOUT = VDD or 0V −0.1 +0.1 A RON Switch On−Resistance (Note 3) 6.0  1.0 DATA PATH (LEDAX TO LEDBX, LEDCX PINS) DC ELECTRICAL CHARACTERISTICS FOR 1000 BASE−T ETHERNET SWITCHING RON Switch On−Resistance (Note 3) VDD = Min, 1.5 V < VIN < VDD, ITN = −40 mA 7.0 RFLAT(ON) On−Resistance Flatness (Note 3) VDD = Min, VIN @ 1.5 V and VDD, ITN = −40 mA 0.3 RON On−Resistance match from center ports to any other port (Note 3) VDD = Min, 1.5 V < VIN < VDD, ITN = −40 mA 0.8 16  1.25 ION On Leakage Current (LEDAX) VDD = 3.6 V, VAX = 0 V or VDD, VOUT = Float −0.1 +0.1 A IOFF Off Leakage Current (LEDAX/LEDBX/LEDCX) VDD = 3.6 V, VIN = 0 V or VDD, VOUT = VDD or 0V −0.1 +0.1 A CONTROL LOGIC (SEL AND PD PINS) DC ELECTRICAL CHARACTERISTICS FOR 10/100 BASE−T ETHERNET SWITCHING VIH Input HIGH Voltage Guaranteed HIGH level (Control Pins) 2.0 VIL Input LOW Voltage Guaranteed LOW level (Control Pins) −0.5 VIK Clamp Diode Voltage VDD = Max, IN = −18 mA V 0.8 −0.7 −1.0 IIHSEL Input HIGH Current (SEL) VDD = Max, VIN = VDD ±0.1 IIHPD Input HIGH Current (PD) VDD = Max, VIN = VDD ±1.2 Input LOW Current VDD = Max, VIN = GND ±0.1 VDD = 0 V, VIN = 0 V to VDD ±0.1 IIL IOFF Off−Leakage Current (SEL) A 2. Active power represents normal data communication. Standby power is when the device is enabled for operation but there is no LAN traffic (cable not connected). Power down current is the minimum power state used when not connected and mobile. 3. Measured by the voltage drop between A and B pins at indicated current through the switch. ON resistance is determined by the lower of the voltages on the two (A & B) pins. 4. Guaranteed by design and/or characterization. 5. The bus switch contributes no propagational delay other than the RC delay of the ON resistance of the switch and the load capacitance. The time constant for the switch alone is of the order of 0.25 ns for 10 pF load. Since this time constant is much smaller than the rise/fall times of typical driving signals, it adds very little propagational delay to the system. Propagational delay of the bus switch when used in a system is determined by the driving circuit on the driving side of the switch and its interactions with the load on the driven side. http://onsemi.com 5 NCN7200 GIGABIT ETHERNET LAN SWITCH WITH 2:1 MUX/ DEMUX AND POWER DOWN FEATURE (Min / Max values are at VDD = 3.3 V ±10%, TA = −40°C to +85°C. Typ values are at VDD = 3.3 V and TA = 25°C) Symbol Description Test Conditions Min Typ Max Unit DATA PATH (AX TO BX, CX PINS) DC ELECTRICAL CHARACTERISTICS FOR 10/100 BASE−T ETHERNET SWITCHING Switch On−Resistance (Note 3) VDD = Min, 1.25 V < VIN < VDD, ITN = −10 mA to −30 mA 2.0 RFLAT(ON) On−Resistance Flatness (Note 3) VDD = Min, 1.25 V < VIN < VDD, ITN = −10 mA to −30 mA 0.8 RON On−Resistance match from center ports to any other port (Note 3) VDD = Min, 1.25 V < VIN < VDD, ITN = −10 mA to −30 mA 0.8 RON 6.0  1.3 ION On Leakage Current (AX) VDD = 3.6 V, VAX = 0 V or VDD, VOUT = Float −0.1 +0.1 A IOFF Off Leakage Current (AX/BX/CX) VDD = 3.6 V, VIN = 0 V or VDD, VOUT = VDD or 0V −0.1 +0.1 A DATA PATH (LEDAX TO LEDBX, LEDCX PINS) DC ELECTRICAL CHARACTERISTICS FOR 10/100 BASE−T ETHERNET SWITCHING RON Switch On−Resistance (Note 3) VDD = Min, 1.25 V < VIN < VDD, ITN = −10 mA to −30 mA 7.0 RFLAT(ON) On−Resistance Flatness (Note 3) VDD = Min, 1.25 V < VIN < VDD, ITN = −10 mA to −30 mA 0.3 RON On−Resistance match from center ports to any other port (Note 3) VDD = Min, 1.25 V < VIN < VDD, ITN = −10 mA to −30 mA 0.8 16  1.25 ION On Leakage Current (LEDAX) VDD = 3.6 V, VAX = 0 V or VDD, VOUT = Float −0.1 +0.1 A IOFF Off Leakage Current (LEDAX/LEDBX/LEDCX) VDD = 3.6 V, VIN = 0 V or VDD, VOUT = VDD or 0V −0.1 +0.1 A pF CAPACITANCE (AX TO BX, CX AND LEDAX TO LEDBX, LEDCX PINS) (Note 4) CIN COFF(B1, VIN = 0 V, f = 1 MHz Input Capacitance 3.0 4.0 Port B Capacitance, Switch OFF 5.0 7.0 A/B Capacitance, Switch ON 10.5 12 B2) CON(A/B) DYNAMIC ELECTRICAL CHARACTERISTICS (AX TO BX AND LEDAX TO LEDBX PINS) (Note 5) BW Bandwidth −3 dB OIRR XTALK RL = 100  (Figure 3) 750 MHz OFF Isolation RL = 100 , f = 250 MHz (Figure 7) −30 dB Crosstalk RL = 100 , f = 250 MHz (Figure 8) −70 SWITCHING CHARACTERISTICS (AX TO BX AND LEDAX TO LEDBX PINS) (Notes 4 and 5) tPD Propagation Delay (Figure 4) ns 0.3 tPZH, tPZL Line Enable Time − SEL to AN, BN (Figure 4) 0.5 15 tPHZ, tPLZ Line Disable Time − SEL to AN, BN (Figure 4) 0.5 25 tSK(o) Output Skew between center port to any other port 0.1 0.2 tSK(p) Skew between opposite transitions of the same output (tHil, − tPLH) 0.1 0.2 2. Active power represents normal data communication. Standby power is when the device is enabled for operation but there is no LAN traffic (cable not connected). Power down current is the minimum power state used when not connected and mobile. 3. Measured by the voltage drop between A and B pins at indicated current through the switch. ON resistance is determined by the lower of the voltages on the two (A & B) pins. 4. Guaranteed by design and/or characterization. 5. The bus switch contributes no propagational delay other than the RC delay of the ON resistance of the switch and the load capacitance. The time constant for the switch alone is of the order of 0.25 ns for 10 pF load. Since this time constant is much smaller than the rise/fall times of typical driving signals, it adds very little propagational delay to the system. Propagational delay of the bus switch when used in a system is determined by the driving circuit on the driving side of the switch and its interactions with the load on the driven side. http://onsemi.com 6 NCN7200 50  DUT Reference Input Output 50  VNA Source Port 1 50  VNA Return Port 2 Control Line Figure 3. Bandwidth 1.2 V VDD 2.5 V SEL Open 1.25 V 200 0V RP SEL Pulse Generator VIN D.U.T. 1.25 V Output VOUT tPZL tPLZ VDD/2 10pF CL 200 VOL + 0.3V VOL tPHZ tPZH 50 VOH VOH VOH − 0.3V VDD/2 Output Figure 4. Three−State and tpd Test Setup Figure 5. Three−State Timing Diagram SWITCH POSITIONS Test Switch tPLZ, tPZL (Output on B−Side) 1.2 V tPHZ, tPZH (Output on B−Side) GND tPD OPEN VOL ANALOG IN VCC 50% GND tPD(HL) tPD(LH) ANALOG OUT VOUT 50% Figure 6. Propagation Delay http://onsemi.com 7 NCN7200 DUT NC (Sense) Transmitted COM Output 50  50  Generator (Force) NO 50  SEL Figure 7. Off−Isolation +3.3V 0V or VDD 0V SEL PD 0.1 F VDD A0+ NCN7200 A0− 50  All unused I/O ports B1+ B1− Network Analyzer PORT 1 VIN+ 50  PORT 2 VIN− 50  PORT 3 VOUT+ 50  PORT 4 VOUT− 50  GND ǒ Differential Crosstalk + 20log Ǔ V OUT) * V OUT* V IN) * V IN* Measurements are standardized against shorts at IC terminals. Differential Crosstalk is measured between any two non−adjacent pairs. Figure 8. Differential Crosstalk http://onsemi.com 8 NCN7200 APPLICATION INFORMATION Logic Inputs Power−Supply Sequencing The logic control inputs can be driven up to +3.6 V regardless of the supply voltage. For example, given a +3.3 V supply, the output enables or select pins may be driven low to 0 V and high to 3.6 V: driving the control pins to the rails minimizes power consumption. Proper power−supply sequencing is advised for all CMOS devices. It is recommended to always apply VDD before applying signals to the input/output or control pins. ORDERING INFORMATION Device NCN7200MTTWG Package Shipping† WQFN42 (Pb−Free) 2000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WQFN42 3.5x9, 0.5P CASE 510AP−01 ISSUE O DATE 15 FEB 2010 1 SCALE 2:1 PIN ONE REFERENCE ÇÇ ÇÇ ÇÇ ÇÇ NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B D L L L1 DETAIL A E ALTERNATE TERMINAL CONSTRUCTIONS DIM A A1 A3 b D D2 E E2 e K L L1 ÉÉ ÉÉ EXPOSED Cu 0.15 C 0.15 C MOLD CMPD DETAIL B TOP VIEW ALTERNATE CONSTRUCTION A 0.10 C A3 GENERIC MARKING DIAGRAM* 0.08 C DETAIL B NOTE 4 A1 SIDE VIEW C XXXXXXXX XXXXXXXX AWLYYWWG SEATING PLANE 0.10 C A B D2 DETAIL A 17 42X 22 L b 0.10 C A B 0.05 C XXXXX A WL YY WW G K 42X NOTE 3 38 = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. E2 1 MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.20 0.30 3.50 BSC 1.95 2.15 9.00 BSC 7.45 7.65 0.50 BSC 0.20 −−− 0.30 0.50 0.00 0.15 RECOMMENDED MOUNTING FOOTPRINT 0.10 C A B 9.30 42X e 0.63 e/2 BOTTOM VIEW 0.50 PITCH 3.80 2.16 1 42X 0.35 PACKAGE OUTLINE DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98AON48316E WQFN42 3.5X9, 0.5P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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