NCP105AMX280TCG

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In order to optimize performance for battery operated portable applications, the NCP105 employs the dynamic quiescent current adjustment for very low IQ consumption at no−load. www.onsemi.com MARKING DIAGRAMS Features • Operating Input Voltage Range: 1.7 V to 5.5 V • Available in Fixed Voltage Options: 0.8 V to 3.6 V • • • • • • • • • • 1 Contact Factory for Other Voltage Options Very Low Quiescent Current of Typ. 50 mA Soft Start Feature with Two VOUT Slew Rate Speed Standby Current Consumption: Typ. 0.1 mA Low Dropout: 125 mV Typical at 150 mA @ 2.8 V ±1% Accuracy at Room Temperature High Power Supply Ripple Rejection: 70 dB at 1 kHz Thermal Shutdown and Current Limit Protections Available in XDFN4 and TSOP−5 Packages Stable with a 1 mF Ceramic Output Capacitor These are Pb−Free Devices XX M 1 XX = Specific Device Code M = Date Code 5 TSOP−5 CASE 483 5 1 XX M G G 1 XX = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. Typical Applicaitons • • • • XDFN4 CASE 711AJ PIN CONNECTIONS PDAs, Mobile phones, GPS, Smartphones Wireless Handsets, Wireless LAN, Bluetooth®, Zigbee® Portable Medical Equipment Other Battery Powered Applications VIN EN IN 3 4 2 1 VOUT IN CIN EN ON OFF OUT NCP105 GND COUT 1 mF Ceramic GND OUT (Bottom View) Figure 1. Typical Application Schematic IN 1 GND 2 EN 3 5 OUT 4 N/C (Top View) ORDERING INFORMATION See detailed ordering, marking and shipping information on page 14 of this data sheet. © Semiconductor Components Industries, LLC, 2018 September, 2019 − Rev. 1 1 Publication Order Number: NCP105/D NCP105 IN ENABLE LOGIC EN THERMAL SHUTDOWN BANDGAP REFERENCE MOSFET DRIVER WITH CURRENT LIMIT OUT AUTO LOW POWER MODE ACTIVE DISCHARGE* EN GND *Active output discharge function is present only in NCP105A and NCP105C devices. yyy denotes the particular VOUT option. Figure 2. Simplified Schematic Block Diagram PIN FUNCTION DESCRIPTION Pin No. (XDFN4) Pin No. (TSOP5) Pin Name Description 1 5 OUT Regulated output voltage pin. A small ceramic capacitor with minimum value of 1 mF is needed from this pin to ground to assure stability. 2 2 GND Power supply ground. 3 3 EN Driving EN over 0.9 V turns on the regulator. Driving EN below 0.4 V puts the regulator into shutdown mode. 4 1 IN Input pin. A small capacitor is needed from this pin to ground to assure stability. − 4 N/C − − EPAD Not connected. This pin can be tied to ground to improve thermal dissipation. Exposed pad should be connected directly to the GND pin. Soldered to a large ground copper plane allows for effective heat removal. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VIN −0.3 V to 6 V V Output Voltage VOUT −0.3 V to VIN + 0.3 V or 6 V V Enable Input VEN −0.3 V to 6 V V Input Voltage (Note 1) Output Short Circuit Duration tSC ∞ s TJ(MAX) 150 °C TSTG −55 to 150 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Maximum Junction Temperature Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22−A114, ESD Machine Model tested per EIA/JESD22−A115, Latchup Current Maximum Rating tested per JEDEC standard: JESD78. THERMAL CHARACTERISTICS (Note 3) Rating Symbol Value Unit Thermal Characteristics, XDFN4 1x1 mm Thermal Resistance, Junction−to−Air RqJA 208 °C/W Thermal Characteristics, TSOP−5 Thermal Resistance, Junction−to−Air RqJA 162 °C/W 3. Single component mounted on 1 oz, FR 4 PCB with 645 mm2 Cu area. www.onsemi.com 2 NCP105 ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 85°C; VIN = VOUT(NOM) + 1 V for VOUT options greater than 1.5 V. Otherwise VIN = 2.5 V, whichever is greater; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise noted. VEN = 0.9 V. Typical values are at TJ = +25°C. Min./Max. are for TJ = −40°C and TJ = +85°C respectively (Note 4). Parameter Test Conditions Operating Input Voltage Output Voltage Accuracy −40°C ≤ TJ ≤ 85°C VOUT ≤ 2.0 V Symbol Min VIN VOUT VOUT > 2.0 V Line Regulation Load Regulation − XDFN4 package Max Unit 1.7 5.5 V −40 +40 mV +2 % VOUT + 0.5 V ≤ VIN ≤ 5.5 V (VIN ≥ 1.7 V) RegLINE −2 0.01 0.1 %/V IOUT = 1 mA to 150 mA RegLOAD 6 15 mV 14 25 220 330 125 210 105 165 225 380 VOUT = 2.8 V 130 260 VOUT = 3.3 V 110 215 Load Regulation − TSOP−5 package Dropout Voltage − XDFN4 package (Note 5) IOUT = 150 mA Dropout Voltage − TSOP−5 package (Note 5) IOUT = 150 mA VOUT = 1.8 V VDO VOUT = 2.8 V VOUT = 3.3 V Output Current Limit Typ VOUT = 1.8 V VDO ICL Quiescent Current IOUT = 0 mA IQ 50 95 mA Shutdown Current VEN ≤ 0.4 V, VIN = 5.5 V IDIS 0.01 1 mA EN Pin Threshold Voltage High Threshold Low Threshold VEN Voltage increasing VEN Voltage decreasing VEN_HI VEN_LO VOUT = 3.3 V, IOUT = 10 mA Normal (version A and B) VOUT_SR Slow (version C and D) EN Pin Input Current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature Thermal Shutdown Hysteresis Active Output Discharge Resistance VEN = 5.5 V 600 mV VOUT = 90% VOUT(nom) VOUT Slew Rate (Note 6) 200 mV mA V 0.9 0.4 190 mV/ms 20 IEN 0.3 PSRR 70 dB f = 10 Hz to 100 kHz VN 70 mVrms Temperature increasing from TJ = +25°C TSD 160 °C Temperature falling from TSD TSDH 20 °C VEN < 0.4 V, Version A and C only RDIS 100 W VIN = 3.8 V, VOUT = 3.5 V IOUT = 10 mA f = 1 kHz 1.0 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 5. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 1 V. 6. Please refer OPN to determine slew rate. NCP105A, NCP105B − Normal speed. NCP105C, NCP105D − slower speed www.onsemi.com 3 NCP105 TYPICAL CHARACTERISTICS 1.815 VOUT, OUTPUT VOLTAGE (V) 1.820 1.215 VOUT, OUTPUT VOLTAGE (V) 1.220 1.210 1.205 IOUT = 10 mA 1.200 1.195 IOUT = 150 mA 1.190 1.180 1.175 VIN = 2.5 V VOUT = 1.2 V CIN = 1 mF COUT = 1 mF 1.170 −40 −30 −20 −10 0 VOUT, OUTPUT VOLTAGE (V) 2.820 2.815 2.810 2.805 10 20 30 40 50 60 70 80 90 IOUT = 10 mA IOUT = 150 mA 2.780 2.775 2.770 −40 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 3.305 3.300 3.295 10 20 30 40 50 60 70 80 90 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF IOUT = 10 mA 3.290 3.285 IOUT = 150 mA 3.280 3.275 3.270 3.265 3.260 −40 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Output Voltage vs. Temperature − VOUT = 2.8 V − XDFN4 Figure 6. Output Voltage vs. Temperature − VOUT = 3.3 V − XDFN4 REGLOAD, LOAD REGULATION (mV) REGLINE, LINE REGULATION (%/V) 1.775 1.770 −40 −30 −20 −10 0 TJ, JUNCTION TEMPERATURE (°C)) 0.005 0 1.780 3.310 VIN = 3.8 V VOUT = 2.8 V CIN = 1 mF COUT = 1 mF 2.785 0.001 IOUT = 150 mA 1.785 Figure 4. Output Voltage vs. Temperature − VOUT = 1.8 V − XDFN4 2.795 0.002 1.795 1.790 Figure 3. Output Voltage vs. Temperature − VOUT = 1.2 V − XDFN4 2.790 0.003 IOUT = 10 mA TJ, JUNCTION TEMPERATURE (°C) 2.800 0.004 1.805 1.800 TJ, JUNCTION TEMPERATURE (°C) VOUT, OUTPUT VOLTAGE (V) 1.185 1.810 VIN = 2.8 V VOUT = 1.8 V CIN = 1 mF COUT = 1 mF VOUT = 1.2 V VOUT = 1.8 V VOUT = 2.8 V VOUT = 3.3 V −0.001 −0.002 −0.003 −0.004 −0.005 −40 −30 −20 −10 0 VIN = VOUT_NOM + 0.5 to 5.5 V IOUT = 10 mA CIN = 1 mF COUT = 1 mF 10 20 30 40 50 60 70 80 90 10 9 VOUT = 2.8 V VOUT = 3.3 V 8 7 6 5 4 VOUT = 1.2 V VOUT = 1.8 V 3 V =V IN OUT_NOM + 1 V 2 IOUT = 1 mA to 150 mA CIN = 1 mF 1 COUT = 1 mF 0 −40 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Line Regulation vs. Temperature Figure 8. Load Regulation vs. Temperature − XDFN4 www.onsemi.com 4 NCP105 TYPICAL CHARACTERISTICS 70 VIN = VOUT_NOM + 1 V CIN = 1 mF COUT = 1 mF 300 TJ = 25°C TJ = −40°C 250 200 150 100 50 0 0.001 250 VDO, DROPOUT VOLTAGE (mV) IQ, QUIESCENT CURRENT (mA) 350 TJ = 85°C 0.01 0.1 1 10 200 175 1000 35 28 VIN = 2.8 V VOUT = 1.8 V IOUT = 0 mA CIN = 1 mF COUT = 1 mF 21 14 7 0 0 200 TJ = 85°C 100 75 TJ = 25°C 50 15 30 45 60 75 90 105 120 135 150 1 2 3 4 5 VOUT = 2.8 V CIN = 1 mF COUT = 1 mF meas for VOUT_NOM − 100 mV 180 160 140 6 TJ = 85°C 120 100 80 TJ = −40°C 60 40 20 0 TJ = 25°C 0 15 30 45 60 75 90 105 120 135 150 IOUT, OUTPUT CURRENT (mA) IOUT, OUTPUT CURRENT (mA) Figure 11. Dropout Voltage vs. Load Current − VOUT = 1.8 V Figure 12. Dropout Voltage vs. Load Current − VOUT = 2.8 V 720 150 VOUT = 3.3 V CIN = 1 mF COUT = 1 mF meas for VOUT_NOM − 100 mV 135 120 105 700 TJ = 85°C ICL, CURRENT LIMIT (mA) VDROP, DROPOUT VOLTAGE (mV) TJ = 85°C 42 Figure 10. Quiescent Current vs. Input Voltage VOUT = 1.8 V 125 90 75 TJ = −40°C 60 45 30 15 0 49 Figure 9. Ground Current vs. Load Current TJ = −40°C 0 TJ = −40°C 56 VIN, INPUT VOLTAGE (V) 150 25 0 TJ = 25°C 63 IOUT, OUTPUT CURRENT (mA) VOUT = 1.8 V CIN = 1 mF COUT = 1 mF meas for VOUT_NOM − 100 mV 225 100 VDROP, DROPOUT VOLTAGE (mV) IGND, GROUND CURRENT (mA) 400 TJ = 25°C 0 15 30 45 60 75 90 680 660 640 620 600 580 560 540 520 −40 −30 −20 −10 0 105 120 135 150 VIN = 4.3 V VOUT = 90% VOUT(nom) CIN = 1 mF COUT = 1 mF 10 20 30 40 50 60 70 80 90 IOUT, OUTPUT CURRENT (mA) TJ, JUNCTION TEMPERATURE (°C) Figure 13. Dropout Voltage vs. Load Current − VOUT = 3.3 V Figure 14. Current Limit vs. Temperature www.onsemi.com 5 NCP105 680 660 640 620 600 580 560 540 520 500 −40 −30 −20 −10 0 VIN = 4.3 V VOUT = 0 V (short) CIN = 1 mF COUT = 1 mF 10 20 30 40 50 60 70 80 90 1.0 0.9 OFF −> ON 0.8 0.7 0.6 0.5 ON −> OFF 0.4 VIN = 3.8 V VOUT = 2.8 V CIN = 1 mF COUT = 1 mF 0.3 0.2 0.1 0 −40 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 15. Short Circuit Current vs. Temperature Figure 16. Enable Thresholds Voltage 250 30 225 27 200 175 150 125 100 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 75 50 25 0 −40 −30 −20 −10 0 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 24 21 18 15 12 9 6 3 0 −40 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 17. Current to Enable Pin vs. Temperature Figure 18. Disable Current vs. Temperature 100 100 90 80 Unstable Operation 70 10 60 ESR (W) RDIS, DISCHARGE RESISTIVITY (W) VEN, ENABLE VOLTAGE THRESHOLDS (V) 700 IDIS, DISABLE CURRENT (nA) IEN, ENABLE PIN CURRENT (nA) ISC, SHORT CIRCUIT CURRENT (mA) TYPICAL CHARACTERISTICS 50 40 30 20 10 0 −40 −30 −20 −10 0 1 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 0.1 10 20 30 40 50 60 70 80 90 Stable Operation 0 15 30 45 60 75 90 105 120 135 150 TJ, JUNCTION TEMPERATURE (°C) IOUT, OUTPUT CURRENT (mA) Figure 19. Discharge Resistance vs. Temperature Figure 20. Maximum COUT ESR Value vs. Load Current www.onsemi.com 6 NCP105 NOISE SPECTRAL DENSITY (mV/√Hz) TYPICAL CHARACTERISTICS 10 IOUT = 1 mA IOUT = 10 mA IOUT = 150 mA 1 IOUT 0.1 VIN = 2.5 V VOUT = 1.2 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 0.01 0.001 10 100 1K 10K 100K 1M RMS Output Noise (mVRMS) 10 Hz − 100 kHz 100 Hz − 100 kHz 1 mA 65.6 61.9 10 mA 63.1 59.5 150 mA 60.8 58.3 10M FREQUENCY (Hz) NOISE SPECTRAL DENSITY (mV/√Hz) Figure 21. Output Voltage Noise Spectral Density – VOUT = 1.2 V 10 IOUT = 1 mA IOUT = 10 mA IOUT = 150 mA 1 IOUT 1 mA 0.1 VIN = 3.8 V VOUT = 2.8 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 0.01 0.001 10 100 1K 10K 100K 1M RMS Output Noise (mVRMS) 10 Hz − 100 kHz 100 Hz − 100 kHz 93.4 87.9 10 mA 92.1 86.6 150 mA 114.4 107.5 10M FREQUENCY (Hz) NOISE SPECTRAL DENSITY (mV/√Hz) Figure 22. Output Voltage Noise Spectral Density – VOUT = 2.8 V 10 IOUT = 1 mA IOUT = 10 mA IOUT = 150 mA 1 IOUT 0.1 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 0.01 0.001 10 100 1K 10K 100K 1M RMS Output Noise (mVRMS) 10 Hz − 100 kHz 100 Hz − 100 kHz 1 mA 104.0 98.0 10 mA 102.9 96.7 150 mA 115.8 110.8 10M FREQUENCY (Hz) Figure 23. Output Voltage Noise Spectral Density – VOUT = 3.3 V www.onsemi.com 7 NCP105 TYPICAL CHARACTERISTICS RR, RIPPLE REJECTION (dB) 80 70 60 50 40 30 20 10 0 VIN = 2.5 V + 100 mVpp VOUT = 1.2 V CIN = none COUT = 1 mF (MLCC) 100 1K 10K 100K 1M 10M 40 30 VIN = 2.8 V + 100 mVpp VOUT = 1.8 V CIN = none COUT = 1 mF (MLCC) 20 10 0 100 1K 10K 100 IOUT = 1 mA IOUT = 10 mA IOUT = 150 mA 60 50 40 VIN = 3.8 V + 100 mVpp VOUT = 2.8 V CIN = none COUT = 1 mF (MLCC) 100 60 50 100K 1M Figure 25. Power Supply Rejection Ratio, VOUT = 1.8 V 70 20 70 Figure 24. Power Supply Rejection Ratio, VOUT = 1.2 V 80 10 0 80 FREQUENCY (Hz) 90 30 IOUT = 1 mA IOUT = 10 mA IOUT = 150 mA 90 FREQUENCY (Hz) 100 RR, RIPPLE REJECTION (dB) 100 IOUT = 1 mA IOUT = 10 mA IOUT = 150 mA 90 RR, RIPPLE REJECTION (dB) RR, RIPPLE REJECTION (dB) 100 1K 10K 100K 1M IOUT = 1 mA IOUT = 10 mA IOUT = 150 mA 90 80 70 60 50 40 30 VIN = 4.3 V + 100 mVpp VOUT = 3.3 V CIN = none COUT = 1 mF (MLCC) 20 10 0 10M 100 1K 10K 100K 1M FREQUENCY (Hz) FREQUENCY (Hz) Figure 26. Power Supply Rejection Ratio, VOUT = 2.8 V Figure 27. Power Supply Rejection Ratio, VOUT = 3.3 V www.onsemi.com 8 10M 10M NCP105 500 mV/div VEN 50 mA/div VEN IINPUT 500 mV/div VIN = 2.8 V VOUT = 1.8 V COUT = 1 mF (MLCC) VOUT IINPUT VIN = 2.8 V VOUT = 1.8 V COUT = 1 mF (MLCC) VOUT 200 ms/div Figure 28. Enable Turn−on Response − IOUT = 0 mA, Slow Option − C Figure 29. Enable Turn−on Response − IOUT = 150 mA, Slow Option − C 500 mV/div 200 ms/div VEN C option VIN = 2.8 V VOUT = 1.8 V COUT = 1 mF (MLCC) VOUT IINPUT 500 mV/div A option 50 mA/div IINPUT VEN A option C option VIN = 2.8 V VOUT = 1.8 V COUT = 1 mF (MLCC) VOUT 50 ms/div 100 ms/div Figure 30. VOUT Slew−Rate Comparison A and C option − IOUT = 10 mA Figure 31. VOUT Slew−Rate Comparison A and C option − IOUT = 150 mA tRISE,FALL = 1 ms VIN VOUT 500 mV/div 3.0 V 2.0 V VOUT = 1.2 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 20 mV/div 20 mV/div 500 mV/div 500 mV/div 50 mA/div 500 mV/div 500 mV/div 50 mA/div 500 mV/div TYPICAL CHARACTERISTICS 3.0 V tRISE,FALL = 1 ms VIN 2.0 V VOUT = 1.2 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) VOUT 10 ms/div 10 ms/div Figure 32. Line Transient Response − IOUT = 10 mA Figure 33. Line Transient Response − IOUT = 150 mA www.onsemi.com 9 NCP105 tRISE,FALL = 1 ms 3.8 V VOUT = 2.8 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) VOUT 20 mV/div VIN 500 mV/div 4.8 V 4.8 V tRISE,FALL = 1 ms VIN 3.8 V VOUT = 2.8 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) VOUT 10 ms/div 10 ms/div Figure 34. Line Transient Response − IOUT = 10 mA Figure 35. Line Transient Response − IOUT = 150 mA tRISE = 1 ms IOUT 50 mA/div VIN = 2.5 V VOUT = 1.2 V CIN = 1 mF (MLCC) IOUT = 1 mA to 150 mA VIN = 2.5 V VOUT = 1.2 V CIN = 1 mF (MLCC) IOUT = 1 mA to 150 mA IOUT tFALL = 1 ms COUT = 1 mF 20 mV/div COUT = 1 mF VOUT COUT = 4.7 mF VOUT COUT = 4.7 mF 10 ms/div Figure 36. Load Transient Response − VOUT = 1.2 V Figure 37. Load Transient Response − VOUT = 1.2 V 50 mA/div 5 ms/div tRISE = 1 ms VIN = 3.8 V, VOUT = 2.8 V CIN = 1 mF (MLCC) COUT = 1 mA to 150 mA IOUT IOUT VIN = 3.8 V, VOUT = 2.8 V CIN = 1 mF (MLCC) IOUT = 1 mA to 150 mA tFALL = 1 ms COUT = 1 mF COUT = 1 mF 20 mV/div 20 mV/div 50 mA/div 20 mV/div 50 mA/div 20 mV/div 500 mV/div TYPICAL CHARACTERISTICS VOUT COUT = 4.7 mF VOUT COUT = 4.7 mF 5 ms/div 10 ms/div Figure 38. Load Transient Response − VOUT = 2.8 V Figure 39. Load Transient Response − VOUT = 2.8 V www.onsemi.com 10 NCP105 50 mA/div tRISE = 1 ms VIN = 4.3 V, VOUT = 3.3 V CIN = 1 mF (MLCC) IOUT = 1 mA to 150 mA IOUT VIN = 4.3 V, VOUT = 3.3 V CIN = 1 mF (MLCC) IOUT = 1 mA to 150 mA IOUT tFALL = 1 ms COUT = 1 mF 20 mV/div COUT = 1 mF VOUT COUT = 4.7 mF VOUT COUT = 4.7 mF 5 ms/div 10 ms/div Figure 40. Load Transient Response − VOUT = 3.3 V Figure 41. Load Transient Response − VOUT = 3.3 V VIN VIN VOUT VOUT VIN = 3.8 V VOUT = 2.8 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 500 mV/div VIN = 3.8 V VOUT = 3.3 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 10 ms/div 10 ms/div Figure 42. Turn−on/off − Slow Rising VIN − IOUT = 10 mA Figure 43. Turn−on/off − Slow Rising VIN − IOUT = 150 mA 50 mV/div IOUT VOUT 500 mV/div 500 mV/div 20 mV/div 50 mA/div TYPICAL CHARACTERISTICS TSD On TSD Off VIN = 5.5 V, VOUT = 1.8 V CIN = 1 mF (MLCC), COUT = 1 mF (MLCC) 5 ms/div Figure 44. Overheating Protection − TSD www.onsemi.com 11 NCP105 APPLICATIONS INFORMATION General The NCP105 is a high performance 150 mA Low Dropout Linear Regulator. This device delivers very high PSRR (over 70 dB at 1 kHz) and excellent dynamic performance as load/line transients. In connection with very low quiescent current this device is very suitable for various battery powered applications such as tablets, cellular phones, wireless and many others. The device is fully protected in case of output overload, output short circuit condition and overheating, assuring a very robust design. disable state the device consumes as low as typ. 10 nA from the VIN. If the EN pin voltage >0.9 V the device is guaranteed to be enabled. The NCP105 regulates the output voltage and the active discharge transistor is turned−off. The EN pin has internal pull−down current source with typ. value of 300 nA which assures that the device is turned−off when the EN pin is not connected. In the case where the EN function isn’t required the EN should be tied directly to IN. Input Capacitor Selection (CIN) Output Current Limit It is recommended to connect at least a 1 mF Ceramic X5R or X7R capacitor as close as possible to the IN pin of the device. This capacitor will provide a low impedance path for unwanted AC signals or noise modulated onto constant input voltage. There is no requirement for the min. /max. ESR of the input capacitor but it is recommended to use ceramic capacitors for their low ESR and ESL. A good input capacitor will limit the influence of input trace inductance and source resistance during sudden load current changes. Larger input capacitor may be necessary if fast and large load transients are encountered in the application. Output Current is internally limited within the IC to a typical 600 mA. The NCP105 will source this amount of current measured with a voltage drops on the 90% of the nominal VOUT. If the Output Voltage is directly shorted to ground (VOUT = 0 V), the short circuit protection will limit the output current to 630 mA (typ). The current limit and short circuit protection will work properly over whole temperature range and also input voltage range. There is no limitation for the short circuit duration. Thermal Shutdown When the die temperature exceeds the Thermal Shutdown threshold (TSD − 160°C typical), Thermal Shutdown event is detected and the device is disabled. The IC will remain in this state until the die temperature decreases below the Thermal Shutdown Reset threshold (TSDU − 140°C typical). Once the IC temperature falls below the 140°C the LDO is enabled again. The thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. This protection is not intended to be used as a substitute for proper heat sinking. Output Decoupling (COUT) The NCP105 requires an output capacitor connected as close as possible to the output pin of the regulator. The recommended capacitor value is 1 mF and X7R or X5R dielectric due to its low capacitance variations over the specified temperature range. The NCP105 is designed to remain stable with minimum effective capacitance of 0.47 mF to account for changes with temperature, DC bias and package size. Especially for small package size capacitors such as 0402 the effective capacitance drops rapidly with the applied DC bias. There is no requirement for the minimum value of Equivalent Series Resistance (ESR) for the COUT but the maximum value of ESR should be less than 1.8 W. Larger output capacitors and lower ESR could improve the load transient response or high frequency PSRR. It is not recommended to use tantalum capacitors on the output due to their large ESR. The equivalent series resistance of tantalum capacitors is also strongly dependent on the temperature, increasing at low temperature. Power Dissipation As power dissipated in the NCP105 increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. The maximum power dissipation the NCP105 can handle is given by: Enable Operation P D(MAX) + The NCP105 uses the EN pin to enable/disable its device and to deactivate/activate the active discharge function. If the EN pin voltage is VIN. Due to this fact in cases, where the extended reverse current condition can be anticipated the device may require additional external protection. PCB Layout Recommendations Power Supply Rejection Ratio To obtain good transient performance and good regulation characteristics place CIN and COUT capacitors close to the device pins and make the PCB traces wide. In order to minimize the solution size, use 0402 capacitors. Larger copper area connected to the pins will also improve the device thermal resistance. The actual power dissipation can be calculated from the equation above (Equation 2). Expose pad should be tied the shortest path to the GND pin. The NCP105 features very good Power Supply Rejection ratio. If desired the PSRR at higher frequencies in the range 100 kHz − 10 MHz can be tuned by the selection of COUT capacitor and proper PCB layout. Turn−On Time The turn−on time is defined as the time period from EN assertion to the point in which VOUT will reach 98% of its nominal value. This time is dependent on various application conditions such as VOUT(NOM) COUT and TA. ORDERING INFORMATION − XDFN4 PACKAGE Device Voltage Option Marking NCP105AMX100TCG 1.05 V TA NCP105AMX120TCG 1.2 V TC NCP105AMX180TBG 1.8 V TD NCP105AMX250TCG 2.5 V TE NCP105AMX280TCG 2.8 V TF NCP105AMX300TCG 3.0 V TG NCP105AMX330TCG 3.3 V TH NCP105AMX345TCG 3.45 V TJ Description Package Shipping 150 mA, Active Discharge, Normal Slew−rate XDFN4 (Pb−Free) 3000 / Tape & Reel NCP105AMX180TCG www.onsemi.com 14 NCP105 PACKAGE DIMENSIONS TSOP−5 CASE 483 ISSUE M D 5X NOTE 5 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. 0.20 C A B 0.10 T M 2X 0.20 T B 5 1 4 2 B S 3 K DETAIL Z G A A TOP VIEW DIM A B C D G H J K M S DETAIL Z J C 0.05 H SIDE VIEW C SEATING PLANE END VIEW MILLIMETERS MIN MAX 2.85 3.15 1.35 1.65 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 15 NCP105 PACKAGE DIMENSIONS XDFN4 1.0x1.0, 0.65P CASE 711AJ ISSUE A PIN ONE REFERENCE 2X 0.05 C 4X A B D ÉÉ ÉÉ E 4X L2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 mm FROM THE TERMINAL TIPS. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. b2 DETAIL A DIM A A1 A3 b b2 D D2 E e L L2 0.05 C 2X TOP VIEW (A3) 0.05 C A 0.05 C NOTE 4 A1 SIDE VIEW e DETAIL A e/2 1 4X 2 SEATING PLANE RECOMMENDED MOUNTING FOOTPRINT* L 0.65 PITCH D2 45 5 C PACKAGE OUTLINE D2 4 MILLIMETERS MIN MAX 0.33 0.43 0.00 0.05 0.10 REF 0.15 0.25 0.02 0.12 1.00 BSC 0.43 0.53 1.00 BSC 0.65 BSC 0.20 0.30 0.07 0.17 3 4X 4X b 0.05 BOTTOM VIEW M 0.11 2X 0.52 4X 0.39 1.20 C A B 4X NOTE 3 0.24 4X 0.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Bluetooth is a registered trademark of Bluetooth SIG. ZigBee is a registered trademark of ZigBee Alliance. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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