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NCP1216AFORWGEVB

NCP1216AFORWGEVB

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    -

  • 描述:

    BOARD EVAL NCP1216A 35W

  • 数据手册
  • 价格&库存
NCP1216AFORWGEVB 数据手册
NCP1216AFORWGEVB Implementing a DC/DC Single‐ended Forward Converter with the NCP1216A Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL • Current-mode Operation Introduction This document describes how the NCP1216A controller can be used to design a DC/DC single-ended forward converter suitable for telecommunication applications. The requirements for the converter are as follows: • Input Voltage Range from 36 V to 72 VDC • Continuous Output Power Greater than 30 W for a 12 V Output Voltage • Small PCB Dimensions • Efficiency Greater then 85% • Input to Output Isolation Voltage of 1500 V • • The NCP1216A controller is an attractive solution for this application, due to the following features: • • 50% Maximum Duty Cycle Operation • • Forward converters usually limit the maximum duty cycle to 50%. Since the voltage reset is constrained to be equal to the input voltage (1:1 reset ratio), it is not desirable to exceed 50% DC to avoid saturating the transformer core. No Auxiliary Winding Operation The DSS (Dynamic Self-supply) function allows the NCP1216A derive power directly from the HV line without having to supply VCC either from the secondary output inductance (creepage distance and isolation issues) or via an auxiliary winding delivering a variable voltage of N × Vin. 500 mA Peak Current Capability The NCP1216A can drive a MOSFET directly without any additional driver stage. If the selected MOSFET gate charge would overload the DSS capability, then an auxiliary winding could be used solely to supply the driver pulses. © Semiconductor Components Industries, LLC, 2012 August, 2012 − Rev. 1 Cycle-by-cycle primary current monitoring eliminates any overcurrent situations, e.g. resulting from a secondary short-circuit. Direct Optocoupler Connection In applications where the input to output isolation is required, a direct connection eases the design stage, saving external components. Extremely Low No-load Power Consumption Extremely low consumption in no-load operation is a great advantage of the NCP1216A controller. Today’s maximum stand-by consumption standards can be easily met if this function is used. Short-circuit Protection By monitoring the activity on the feedback line, the NCP1216A simplifies the task of secondary side short-circuit protection. Coupling problems are eliminated thanks to this feature and the DSS implementation. The 35 W DC/DC Converter Board Specifications The schematic of the proposed converter is shown in Figure 1. This converter has the following specifications: Minimum Input Voltage 36 VDC Maximum Input Voltage 72 VDC Output Voltage 12 VDC Continued Output Current 100 kHz No-load Consumption at 48 V 1.8 mA Maximum Ambient Temperature 1 3.0 A Operating Frequency 70°C Publication Order Number: EVBUM2133/D R1 12 k + 36− 72 V C1 22 m/ 100 V 2 http://onsemi.com Figure 1. Schematic Diagram NCP1216A C4 22 m DRV GND HV VCC IC1 CS FB ADJ 10 mH L1 C2 22 m/ 100 V + R5 8k2 1N4148 1k8 R3 10 R D1 0R C5 1.5 n T2 Q1 FQD18N20 D3 MURA240T3 R4 + R2 C3 22 m/ 100 V MURA240T3 D2 T1 4n7/Y2 C6 MURB1620CT D4B D4A C9 220 m/ 25 V C10 220 m/ 25 V + C8 220 m/ 25 V IC3 TLV431 PC817 IC2 18 k R8 R7 560 R 33 n C12 1.0 mH + 100 mH + L3 2n2 C7 L2 100 R R6 R10 4k3 R9 39 k C11 220 m/ 25 V +12 V NCP1216AFORWGEVB NCP1216AFORWGEVB Description of Converter Connection The primary magnetization current does not directly participate in the energy transfer and cause additive losses on the power switch and the primary winding. When the switch is off, the transformer core must be reset in order to let the internal flux return to zero. This is done via a dedicated reset circuit. Consequently the magnetizing current Imag must be kept smaller than the productive component of the primary current. The core flux density excursion DB has to be chosen with respect to the characteristics of the core material: the saturation flux density Bmax or Bsat, the residual flux density Br, hysteretic losses and the core temperature behavior. With respect to these characteristics, the flux density excursion in high frequency converters should be between 0.15 T and 0.2 T. If a higher value is chosen, greater losses will be generated. The primary turn count Np can be calculated by rearranging equation 4: Capacitors C1, C2, C3 and inductor L1 form the input filter. Diode D3, capacitor C5 and resistor R5 provide the primary clamping network which combats leakage inductance between the reset winding and the primary winding. The link between both windings occurs via D2 when the switch is off. Transformer T2 with diode D1 and resistors R2, R3 serve as the primary current sensing circuit. Thanks to low insertion losses, the final efficiency of the converter benefits greatly from this configuration. IC1 is the main driving circuit of the power converter. The secondary circuitry has D4A as the forward diode and D4B as the freewheeling diode. Capacitor C6 offers a path for common-mode (CM) currents circulating via the various transformer stray capacitances during switching events. Resistors R7, R8, R9, and R10 together with capacitor C12, shunt regulator IC3, and optocoupler IC2 form an isolated feedback circuit for output voltage regulation. A snubber network (R6, C7) is connected across inductor L2 in order to damp high frequency oscillations. L2, C8, C9 and C10 form the basic LC output filter. L3 and C11 form an additional output filter to reduce high frequency noise. Design considerations for various sections of the converter are described below. Np + In a forward converter, the core magnetization is ensured by applying a voltage Vin on the primary side. This action creates the core flux f which links both primary and secondary windings. Using Faraday’s law, we can write that E = N.df/dt, where E is the voltage generated by a winding of N turns, energized by a flux f. By integrating this formula, and rearranging it in terms of the input voltage Vin and the on time ton, we can see that the internal flux depends on the volt-second product: (eq. 1) where: Ae is the total core area B is the core flux density Thus, the maximum core flux density DBMAX and the peak primary magnetization current IPKMAG of the transformer are given by the primary inductance value L1 and the maximum input voltage according to equations (2) and (3): I PKMAG + V in max DB MAX + where: Vin max L1 fop ądmax Np L1 @ 1 @ d max f op V in max @ d max N p @ f op @ A e (eq. 4) For an EFD25 core with a total core area of 58 mm2 (DBmax = 0.2 T, Vin max = 80 V, fop = 100 kHz and maximum duty cycle dmax = 0.5) then the number of primary turns Np = 35. The number of reset winding turns depends on design tradeoffs. When the number of turns of the reset winding is lower than the that of the primary winding, the reflected voltage on the power switch drain will be lower than 2 × Vin max. However, this limits the maximum duty cycle excursion to less than 50%. Conversely, if the reset turns are larger than the primary turns, the maximum allowed duty cycle will increase but the MOSFET voltage stress will exceed 2 × Vin max. Due to these issues, the practical number of turns for the reset winding is usually chosen to be the same as the primary winding, or a 1:1 ratio. It is important to provide a very good coupling between these two windings. A high leakage inductance between these windings would require a hard voltage clamp that would hurt the converter efficiency. The number of turns on the secondary winding Ns can be obtained from equation 5: Transformer Design V in @ t on + N @ f + N @ A e @ B V in max @ d max DB MAX @ f op @ A e Ns + Np @ where: Vout Vf Vin min (eq. 2) (eq. 3) V out d max ) Vf V in min (eq. 5) is the desired output voltage is the voltage drop of the output rectifier is the minimum input voltage In the example using the EFD 25, equation (5) gives Ns = 25 turns. The primary and the secondary windings must be wound to limit the skin effect. This can be done by using several wires wound in parallel. The maximum diameter Dmax (in mm) of each single wire in the winding is given by equation 6: is the maximum input voltage is the primary winding inductance is the operating frequency is the maximum duty cycle is the count of the primary turns http://onsemi.com 3 NCP1216AFORWGEVB D max + 2 @ 75 Ǹfop would be about 3.0 W. When the current sense transformer is used, power losses are about 50 mW. The disadvantage of this solution lies in the current error brought by the magnetization current of current sense transformer. This error is additive so it should accounted for and reduced. A toroidal core with 38 turns of the secondary winding was used in NCP1216A demo board. The primary winding is created by one turn of isolated wire. The peak current I2pk of the current sense resistor can be obtained from equation 8: (eq. 6) The total area of the selected wire for primary and secondary windings is a tradeoff between the desired output power, allowable conduction losses in the windings and thermal considerations. The current density in the transformer winding can generally range from 2 to 3.5 A/mm2. If a cooling fan is used, the current density can be increased. The reset winding can be made with a single wire technique, given the low magnetization current flowing into it. In some cases, a small air gap can be inserted into the magnetic circuit of the forward transformer. This solution brings the residual flux density Br to a lower value than without a gap. The main drawback lies in the primary inductance decrease which forces a higher magnetizing current. I 2pk + I 1pk @ 1 * I magpk Ns where: I1pk Ns Imagpk I magpk + The value of the output inductor selected depends on the acceptable level of ripple current. For a small ripple current, a large inductance is needed. On the other hand, when the current ripple is high, large output capacitors must be used to reduce the voltage ripple. In practice, it is usual to limit the current ripple to about 10−20% of the average current of the inductor. The maximum current ripple DImax in a forward converter occurs at 50% duty cycle. Its value can be found via equation (7): V sec max 4 @ f op @ L 2 is the peak current of the power switch is the count of secondary turns is the peak value of the magnetization current Figure 2 shows the current sense transformer circuit. The peak value of the magnetization current is given by equation 9: Output Inductor Design DI max + (eq. 8) V csth max @ d max (eq. 9) L s @ f op where: Vcsth max is the maximum threshold voltage of the current sense input Ls is the inductance of the secondary winding Q1 (eq. 7) I1/Ns D1 where: Vsec max is the maximum secondary voltage L2 is the inductance of inductor L2 I2 T2 Imag I1 RSENSE In the NCP1216A demo board, where a 100 mH inductor is used, the maximum output ripple will be DImax = 2.0 A. This is rather high, but the allowable dimensions of the inductor limit a higher inductance value selection. The values and types of output capacitors must be chosen with respect to the maximum allowable output voltage excursion as well as the RMS current that will flow in them. Ns Np Figure 2. Implementation of the Current Sense Transformer The value of the current sense resistor Rsense can be calculated by using equation 10: Current Sense Transformer Design R sense + The current sense transformer is used to reduce power losses traditionally found in the standard current sense resistor configuration. If a classical current sense resistor were used in this application, the associated power loss V csth max I 2pk (eq. 10) The NCP1216A Leading Edge Blanking circuit (LEB) allows the designer to avoid using a RC network to suppress voltage spikes during the switch turn-on event. http://onsemi.com 4 NCP1216AFORWGEVB Primary RCD Clamp and Inductor Snubber Network Design C clamp + Because of manufacturing constraints, the leakage inductance between primary and secondary windings is never equal to zero. The energy stored in this leakage inductance during ton will cause large voltage spikes when the switch is turning off. To protect the power switch from a catastrophic voltage spike, a RCD clamping network must be used. The values of these components depend not only on the leakage inductance value but also on the reflected voltage, the parasitic influence of the layout, and the RCD capacitor. The power dissipation of the RCD clamp can be obtained from equation 11: V clamp 2 P clamp + 1 @ I 1pk @ L leak @ f op @ 2 V clamp * V refl where: Lleak Vclamp Vrefl An RC snubber network is connected across the inductor L2 to dampen the parasitic oscillations caused when the freewheel and forward diodes are switched. Both the clamp and snubber networks dissipate heat and affect the converter efficiency. Regulation Loop Design A standard loop topology with a TLV431 shunt regulator is used. The optocoupler provides good isolation between input and output sides of the converter. The output voltage is set up by the R9 and R10 divider ratio according to equation 14: (eq. 11) ǒ V out + 1, 25 @ 1 ) 2 L leak @ I 1pk @ f op R9 R 10 Ǔ (eq. 14) The maximum current flowing through the optocoupler LED is determined by resistor R7. The internal consumption of the TLV431 is low, thus avoiding another biasing element, bypassing the LED. Resistor R8 and C12 constitute the feedback loop compensation circuit. The optimal values for these components are based on the feedback response measurements. The optimal values of the clamping devices are given by equations 12 and 13: 2 @ V clamp @ ǒV clamp * V reflǓ (eq. 13) where: Vripple is the ripple voltage level on the clamping capacitor; this ripple should be minimized. is value of the leakage inductance is value of the clamp voltage is value of the reflected voltage (Vrefl = Vin max for forward converters with max. DC = 50%) R clamp + V clamp V ripple @ f op @ R clamp (eq. 12) http://onsemi.com 5 NCP1216AFORWGEVB Figure 3. PCB Layout (Top Side) Figure 4. PCB Layout (Bottom Side) Figure 5. Component Arrangement (Top Side) Figure 6. Component Arrangement (Bottom Side) http://onsemi.com 6 NCP1216AFORWGEVB PCB Layout Design Performance of the Converter A double-sided PCB is used to minimize the size of the converter. The board is designed with respect to the power dissipation created by the power devices, thus large cooling areas are used. Sound grounding techniques and appropriate isolation distances were incorporated into the layout. The PCB layout and component arrangement can be seen on Figures 3, 4, 5 and 6. The power conversion efficiency of the DC/DC converter is shown in Figures 7 and 8. 86 EFFICIENCY (%) 85, 5 Table 1. BILL OF MATERIALS L1 10 mH DS3316P−103−Coilcraft L2 100 mH B0754−A−Coilcraft L3 1.0 mH DS3316P−102−Coilcraft T1 C0972−A−Coilcraft T2 Toroid f6.0 mm, Material T30−Epcos Ns = 38 Turns C1, C2, C3 22 m/100 V Nippon Chemi−Con−KMF C4 22 m/25 V Nippon Chemi−Con−KMF C5 1,5 nF/500 V Through Hole Ceramic Capacitor C6 4n7 Y2 Type Capacitor C7 2,2 nF/500 V Through Hole Ceramic Capacitor 84, 5 84 36 R1 12 kW SMD 0805 R2 1,8 kW SMD 0805 R3 10 W SMD 0805 R4 0R SMD1206 R5 8,2 kW/1.0 W Through Hole R6 100 W/1.0 W Through Hole R7 560 W SMD1206 R8 18 kW SMD 0805 R9 39 kW SMD 0805 R10 4,3 kW SMD 0805 D1 MMSD914T1−ON Semiconductor D2, D3 MURA2403T3−ON Semiconductor D4 MURB1620CT−ON Semiconductor Q1 FQD18N20V2TF−Fairchild IC1 NCP1216A−ON Semiconductor IC2 PC817−SHARP IC3 TLV431BSN1T1−ON Semiconductor 66 76 86 90 85 EFFICIENCY (%) 33 nF SMD 1206 56 Figure 7. DC/DC Converter Efficiency vs. Input Voltage 220 m/25 V Nippon Chemi−Con−LXZ C12 46 INPUT VOLTAGE (V) 80 75 70 65 60 0 5 10 15 20 25 OUTPUT POWER (W) 30 35 Figure 8. DC/DC Converter Efficiency vs. Output Power (Vin = 48 V) The no-load consumption as a function of input voltage is shown in Figure 9. 150 NO LOAD CONSUMPTION (mW) C8, C9, C10, C11 85 140 130 120 110 100 90 80 70 36 40 44 48 52 56 60 64 68 72 76 80 INPUT VOLTAGE (V) Figure 9. No Load Consumption vs. Input Voltage http://onsemi.com 7 NCP1216AFORWGEVB The gate (trace 1) and drain (trace 2) waveforms of the power MOSFET Q1 are shown in Figures 10, 11, 12 and 13 for several converter conditions. GATE DRAIN GATE DRAIN Figure 13. Detailed Burst During Overload The load regulation for an output current step from 10% to 100% can be seen in Figure 14. Figure 10. Vinput = 48 V, Iout = 3.0 A GATE DRAIN Figure 14. Load Regulation (Iout changing from 10% to 100%−0.3 A to 3.0 A) Figure 11. No Load Operation GATE DRAIN Figure 12. Overload Operation http://onsemi.com 8 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. The evaluation board/kit (research and development board/kit) (hereinafter the “board”) is not a finished product and is not available for sale to consumers. The board is only intended for research, development, demonstration and evaluation purposes and will only be used in laboratory/development areas by persons with an engineering/technical training and familiar with the risks associated with handling electrical/mechanical components, systems and subsystems. This person assumes full responsibility/liability for proper and safe handling. Any other use, resale or redistribution for any other purpose is strictly prohibited. THE BOARD IS PROVIDED BY ONSEMI TO YOU “AS IS” AND WITHOUT ANY REPRESENTATIONS OR WARRANTIES WHATSOEVER. WITHOUT LIMITING THE FOREGOING, ONSEMI (AND ITS LICENSORS/SUPPLIERS) HEREBY DISCLAIMS ANY AND ALL REPRESENTATIONS AND WARRANTIES IN RELATION TO THE BOARD, ANY MODIFICATIONS, OR THIS AGREEMENT, WHETHER EXPRESS, IMPLIED, STATUTORY OR OTHERWISE, INCLUDING WITHOUT LIMITATION ANY AND ALL REPRESENTATIONS AND WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, TITLE, NON−INFRINGEMENT, AND THOSE ARISING FROM A COURSE OF DEALING, TRADE USAGE, TRADE CUSTOM OR TRADE PRACTICE. onsemi reserves the right to make changes without further notice to any board. You are responsible for determining whether the board will be suitable for your intended use or application or will achieve your intended results. Prior to using or distributing any systems that have been evaluated, designed or tested using the board, you agree to test and validate your design to confirm the functionality for your application. Any technical, applications or design information or advice, quality characterization, reliability data or other services provided by onsemi shall not constitute any representation or warranty by onsemi, and no additional obligations or liabilities shall arise from onsemi having provided such information or services. onsemi products including the boards are not designed, intended, or authorized for use in life support systems, or any FDA Class 3 medical devices or medical devices with a similar or equivalent classification in a foreign jurisdiction, or any devices intended for implantation in the human body. You agree to indemnify, defend and hold harmless onsemi, its directors, officers, employees, representatives, agents, subsidiaries, affiliates, distributors, and assigns, against any and all liabilities, losses, costs, damages, judgments, and expenses, arising out of any claim, demand, investigation, lawsuit, regulatory action or cause of action arising out of or associated with any unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of any products and/or the board. This evaluation board/kit does not fall within the scope of the European Union directives regarding electromagnetic compatibility, restricted substances (RoHS), recycling (WEEE), FCC, CE or UL, and may not meet the technical requirements of these or other related directives. FCC WARNING – This evaluation board/kit is intended for use for engineering development, demonstration, or evaluation purposes only and is not considered by onsemi to be a finished end product fit for general consumer use. It may generate, use, or radiate radio frequency energy and has not been tested for compliance with the limits of computing devices pursuant to part 15 of FCC rules, which are designed to provide reasonable protection against radio frequency interference. Operation of this equipment may cause interference with radio communications, in which case the user shall be responsible, at its expense, to take whatever measures may be required to correct this interference. onsemi does not convey any license under its patent rights nor the rights of others. LIMITATIONS OF LIABILITY: onsemi shall not be liable for any special, consequential, incidental, indirect or punitive damages, including, but not limited to the costs of requalification, delay, loss of profits or goodwill, arising out of or in connection with the board, even if onsemi is advised of the possibility of such damages. In no event shall onsemi’s aggregate liability from any obligation arising out of or in connection with the board, under any theory of liability, exceed the purchase price paid for the board, if any. The board is provided to you subject to the license and other terms per onsemi’s standard terms and conditions of sale. For more information and documentation, please visit www.onsemi.com. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 1 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
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