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NCP1217P65

NCP1217P65

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    DIP7

  • 描述:

    IC CTRLR PWM CM OVP HV 8DIP

  • 数据手册
  • 价格&库存
NCP1217P65 数据手册
NCP1217, NCP1217A PWM Controller, Fixed Frequency, Current Mode Housed in an SO−8 or PDIP−7 package, the NCP1217 represents the enhanced version of the NCP1203−based controllers. Due to its high drive capability, NCP1217 drives large gate−charge MOSFETs, which together with internal ramp compensation and built−in overvoltage protection, ease the design of modern AC/DC adapters. NCP1217 offers a true alternative to UC384X−based designs. With an internal structure operating at different fixed frequencies (65–100–133 kHz), the controller features a high−voltage startup FET, which ensures a clean and loss less startup sequence. Its current−mode control topology provides an excellent input audio−susceptibility and inherent pulse−by−pulse control. Internal ramp compensation easily prevents subharmonic oscillations from taking place in continuous conduction mode designs. When the current setpoint falls below a given value, e.g. the output power demand diminishes, the IC automatically enters the so−called skip cycle mode and provides excellent efficiency at light loads. Because this occurs at a user adjustable low peak current, no acoustic noise takes place. The NCP1217 features two efficient protective circuitries: 1) In presence of an overcurrent condition, the output pulses are disabled and the device enters a safe burst mode, trying to restart. Once the default has gone, the device auto−recovers. 2) If an external signal (e.g. a temperature sensor) pulls Pin 1 above 3.2 V, output pulses are immediately stopped and the NCP1217 stays latched in this position. Reset occurs when the VCC collapses to ground, e.g. the user unplugs the power supply. Features • • • • • • • • • • • • • • Current−Mode with Adjustable Skip−Cycle Capability Built−in Internal Ramp Compensation Auto−Recovery Internal Output Short−Circuit Protection Internal 1.0 ms Soft−Start (NCP1217A Only) Limited Duty−Cycle to 50% (NCP1217A Only) Full Latchoff if Adjustment Pin is Brought High Extremely Low No−Load Standby Power Internal Temperature Shutdown 500 mA Peak Current Capability Fixed Frequency Versions at 65 kHz, 100 kHz and 133 kHz Direct Optocoupler Connection Internal Leading Edge Blanking SPICE Models Available for TRANsient and AC Analysis These are Pb−Free Devices MARKING DIAGRAMS 8 SOIC−8 D SUFFIX CASE 751 8 1 XXXXX ALYW G 1 XXXXXXXXX AWL YYWWG PDIP−7 P SUFFIX CASE 626B 8 1 1 XXXXXX A L, WL Y, YY W, WW G or G = = = = = = Specific Device Code Assembly Location Wafer Lot Year Work Week Pb−Free Package DEVICE MARKING INFORMATION See detailed device marking information in the ordering information section on page 17 of this data sheet. PIN CONNECTIONS Adj 1 8 HV FB 2 7 NC CS 3 6 VCC 5 Drv GND 4 (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the ordering information section on page 17 of this data sheet. Typical Applications • • • • www.onsemi.com High Power AC/DC Converters for TVs, Set−Top Boxes, etc. Offline Adapters for Notebooks Telecom DC−DC Converters All Power Supplies © Semiconductor Components Industries, LLC, 2015 April, 2015 − Rev. 9 1 Publication Order Number: NCP1217/D NCP1217, NCP1217A See Application Section + Aux. + VOUT NCP1217 Adj 1 2 EMI FILTER CS VCC 3 Gnd Drv 4 UNIVERSAL INPUT HV FB 8 7 6 5 Ramp Adjustment + Figure 1. Typical Application Example PIN FUNCTION DESCRIPTION Pin No. Pin Name Function Description 1 Adj Adjust the skipping peak current This pin lets you adjust the level at which the cycle skipping process takes place. Shorting this pin to ground permanently disables the skip cycle feature. By bringing this pin above 3.1 V, you permanently shut off the device. 2 FB Sets the peak current setpoint By connecting an optocoupler to this pin, the peak current setpoint is adjusted accordingly to the output power demand. 3 CS Current sense input This pin senses the primary current and routes it to the internal comparator via an L.E.B. By inserting a resistor in series with the pin, you control the amount of ramp compensation you need. 4 GND The IC ground 5 Drv Driving pulses 6 VCC Supplies the IC 7 NC 8 HV − The driver’s output to an external MOSFET. This pin is connected to an external bulk capacitor of typically 22 F. − Ensures a clean and lossless startup sequence This unconnected pin ensures adequate creepage distance. Connected to the high−voltage rail, this pin injects a constant current into the VCC capacitor during the startup sequence. www.onsemi.com 2 NCP1217, NCP1217A Adj Latchoff Comparator + - 1 + − 80 k FB HV 8 Set 3.1 V Latch 1.1 V UVLO Reset Skip Cycle Comparator + - 2 HV Current Source NC 7 UVLO High and Low Internal VCC 24 k Reset Current Sense 250 ns L.E.B. 3 65−100−133 kHz Clock Q Flip−Flop DCmax = 74% Set Q Reset VCC Overload Management 6 19 k Ramp Compensation 20 k Ground 4 + − + - 57 k VREF Drv 25 k * Available for “A” version only 1ms SS* 1V 5 ±500 mA Figure 2. Internal Circuit Architecture MAXIMUM RATINGS Rating Symbol Value Unit VCC 16 V − −0.3 to 10 V Maximum Voltage on Pin 8 (HV), Pin 6 (VCC) Decoupled to Ground with 10 F VHV 500 V Maximum Voltage on Pin 8 (HV), Pin 6 (VCC) Grounded VHV 450 V 28 V − 5.0 mA Thermal Resistance, Junction−to−Case RJC 57 °C/W Thermal Resistance, Junction−to−Air, PDIP−7 Version Thermal Resistance, Junction−to−Air, SO−8 Version RJA RJA 100 178 °C/W Power Supply Voltage Power Supply Voltage on All Other Pins Except Pin 8 (HV), Pin 6 (VCC) and Pin 5 (Drv) Minimum Operating Voltage on Pin 8 (HV) Maximum Current into All Pins Except VCC (6) and HV (8) when 10 V ESD Diodes are Activated Maximum Junction Temperature TJMAX 150 °C Temperature Shutdown − 155 °C Hysteresis in Shutdown − 30 °C Storage Temperature Range − −60 to +150 °C ESD Capability, HBM Model (All Pins Except VCC and HV) − 2.0 kV ESD Capability, Machine Model − 200 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This device series contains ESD protection rated using the following tests: Human Body Model (HBM) 2000 V per JEDEC Standard JESD22, Method A114E. Machine Model (MM) 200 V per JEDEC Standard JESD22, Method A115A. www.onsemi.com 3 NCP1217, NCP1217A ELECTRICAL CHARACTERISTICS (For typical values TJ = 25°C, for min/max values TJ = 0°C to +125°C, Max TJ = 150°C, VCC = 11 V unless otherwise noted.) Characteristic Pin Symbol Min Typ Max Unit Turn−On Threshold Level, VCC Going Up 6 VCCON 11.8 12.8 13.8 V Minimum Operating Voltage After Turn−On 6 VCCmin 6.9 7.6 8.3 V VCC Decreasing Level at which the Latchoff Phase Ends 6 VCClatch − 5.6 − V Internal IC Consumption, No Output Load on Pin 5, FSW = 65 kHz 6 ICC1 − 960 1110 (Note 1) A Internal IC Consumption, No Output Load on Pin 5, FSW = 100 kHz 6 ICC1 − 1020 1180 (Note 1) A Internal IC Consumption, No Output Load on Pin 5, FSW = 133 kHz 6 ICC1 − 1060 1200 (Note 1) A Internal IC Consumption, 1.0 nF Output Load on Pin 5, FSW = 65 kHz 6 ICC2 − 1.7 2.0 (Note 1) mA Internal IC Consumption, 1.0 nF Output Load on Pin 5, FSW = 100 kHz 6 ICC2 − 2.1 2.4 (Note 1) mA Internal IC Consumption, 1.0 nF Output Load on Pin 5, FSW = 133 kHz 6 ICC2 − 2.4 2.9 (Note 1) mA Internal IC Consumption, Latchoff Phase, VCC = 6.0 V 6 ICC3 − 230 − A High−Voltage Current Source, VCC = 10 V 8 IC1 3.5 (Note 2) 6.0 7.8 mA High−Voltage Current Source, VCC = 0 8 IC2 − 7.0 − mA Output Voltage Rise−Time @ CL = 1.0 nF, 10−90% of a 12 V Output Signal 5 Tr − 60 − ns Output Voltage Fall−Time @ CL = 1.0 nF, 10−90% of a 12 V Output Signal 5 Tf − 20 − ns Source Resistance 5 ROH 15 20 35  Sink Resistance 5 ROL 5.0 10 18  SUPPLY SECTION (All frequency versions, unless otherwise noted) INTERNAL STARTUP CURRENT SOURCE (TJ u 0°C) DRIVE OUTPUT CURRENT COMPARATOR (Pin 5 Unloaded) Input Bias Current @ 1.0 V Input Level on Pin 3 3 IIB − 0.02 − A Maximum Internal Current Setpoint 3 ILimit 0.9 1.0 1.1 V Default Internal Current Setpoint for Skip Cycle Operation 3 ILskip − 330 − mV Propagation Delay from Current Detection to Gate OFF State 3 TDEL − 90 150 ns Leading Edge Blanking Duration 3 TLEB − 250 − ns INTERNAL OSCILLATOR (VCC = 11 V, Pin 5 Loaded by 1.0 k) Oscillation Frequency, 65 kHz Version − fOSC 58.5 65 71.5 kHz Oscillation Frequency, 100 kHz Version − fOSC 90 100 110 kHz Oscillation Frequency, 133 kHz Version − fOSC 120 133 146 kHz Maximum Duty−Cycle, NCP1217 − Dmax 69 74 80 % Maximum Duty−Cycle, NCP1217A − Dmax 42 46.5 50 % Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Maximum Value @ TJ = 0°C. 2. Minimum Value @ TJ = 125°C. www.onsemi.com 4 NCP1217, NCP1217A ELECTRICAL CHARACTERISTICS (continued) (For typical values TJ = 25°C, for min/max values TJ = 0°C to +125°C, Max TJ = 150°C, VCC = 11 V unless otherwise noted.) Pin Symbol Min Typ Max Unit Internal Pull−Up Resistor 2 Rup − 19 − k Pin 2 (FB) to Internal Current Setpoint Division Ratio − Iratio − 3.3 − − Default Skip Mode Level 1 Vskip 0.93 1.1 1.26 V Pin 1 Internal Output Impedance 1 Zout − 27 − k Internal Ramp Level @ 25°C (Note 3) 3 Vramp 2.6 2.9 3.2 V Internal Ramp Resistance to CS Pin 3 Rramp − 19 − k 1 Vlatch 2.69 3.10 3.42 V Characteristic FEEDBACK SECTION (VCC = 11 V, Pin 5 Loaded by 1.0 k) SKIP CYCLE GENERATION INTERNAL RAMP COMPENSATION ADJUSTMENT LATCHOFF LEVEL Latching Level Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. A 1.0 M resistor is connected to the ground for the measurement. 80 14.0 70 13.5 60 50 VCCOFF, (V) HV PIN LEAKAGE CURRENT @ 500V (A) TYPICAL CHARACTERISTICS 40 30 13.0 12.5 12.0 20 11.5 10 0 −50 0 50 11.0 −50 150 100 0 50 100 TEMPERATURE (°C) TEMPERATURE (°C) Figure 3. High Voltage Pin Leakage Current vs. Temperature Figure 4. VCCOFF vs. Temperature 9.0 150 3.0 ICC 1.0 nF LOAD, (mA) 2.8 VCCMIN, (V) 8.5 8.0 7.5 2.6 2.4 133 kHz 2.2 2.0 100 kHz 1.8 1.6 65 kHz 1.4 1.2 7.0 −50 0 50 1.0 −50 150 100 TEMPERATURE (°C) 0 50 100 TEMPERATURE (°C) Figure 5. VCCMIN vs. Temperature Figure 6. ICC 1.0 nF Load vs. Temperature www.onsemi.com 5 150 NCP1217, NCP1217A TYPICAL CHARACTERISTICS (continued) 150 5.90 133 kHz 5.80 110 VCClatch, (V) FOSC, (kHz) 130 100 kHz 90 65 kHz 70 50 −50 0 50 5.70 5.60 5.50 5.40 100 5.30 −50 150 0 Figure 7. Switching Frequency vs. Temperature DRIVE SOURCE RESISTANCE, () ICC3, (A) 400 350 300 250 0 50 20 15 10 5 0 −50 150 100 25 0 50 100 150 TEMPERATURE (°C) TEMPERATURE (°C) Figure 9. ICC3 vs. Temperature Figure 10. Drive Source Resistance vs. Temperature 1.10 CURRENT SENSE LIMIT, (V) 30 DRIVE SINK RESISTANCE, () 150 30 450 25 20 15 10 5 0 −50 100 Figure 8. VCClatch vs. Temperature 500 200 −50 50 TEMPERATURE (°C) TEMPERATURE (°C) 0 50 100 150 1.05 1.00 0.95 0.90 −50 TEMPERATURE (°C) 0 50 100 TEMPERATURE (°C) Figure 11. Drive Sink Resistance vs. Temperature Figure 12. Current Sense Limit vs. Temperature www.onsemi.com 6 150 NCP1217, NCP1217A TYPICAL CHARACTERISTICS (continued) 3.10 INT COMP RAMP LEVEL (V) 1.15 1.10 1.05 1.00 −50 0 50 100 3.05 3.00 2.95 2.90 2.85 2.80 2.75 2.70 −50 150 0 50 Figure 13. Skip Mode Level vs. Temperature Figure 14. Int Comp Ramp Max Level vs. Temperature 8.0 7.0 6.0 5.0 4.0 3.0 −50 100 TEMPERATURE (°C) TEMPERATURE (°C) HV SOURCE CURRENT (mA) DSKIP MODE LEVEL (V) 1.20 0 50 100 TEMPERATURE (°C) Figure 15. High Voltage Current Source (@ VCC = 10V) vs. Temperature www.onsemi.com 7 150 150 NCP1217, NCP1217A APPLICATION INFORMATION Introduction help reducing magnetics or improve the EMI signature before reaching the 150 kHz starting point. Overcurrent Protection (OCP): By continuously monitoring the VCC auxiliary winding voltage, NCP1217 enters burst mode as soon as the power supply undergoes an overload: when the VCC voltage goes down until it crosses the undervoltage lockout level (VCCmin). When the NCP1217 reaches this level (typically 7.6 V), it stops the switching pulses until the VCC pin voltage reaches VCClatch (5.6 V). At VCClatch, the NCP1217 attempts to restart. As soon as the default disappears, the power supply resumes operation. Overvoltage Protection (OVP): If pin1 is brought to a level higher than the internal 3.2 V reference voltage, the controller is permanently shut down until the user cycles the VCC OFF and ON again. This allows the building of efficient and low−cost over voltage protection circuits. Wide Duty−Cycle Operation: Wide mains operation requires a large duty−cycle excursion. The NCP1217 can go up to 74% typically. Low Standby−Power: If SMPS naturally exhibit a good efficiency at nominal load, they begin to be less efficient when the output power demand diminishes. By skipping unneeded switching cycles, the NCP1217 drastically reduces the power wasted during light load conditions. In no−load conditions, the NPC1217 allows the total standby power to easily reach next International Energy Agency (IEA) recommendations. No Acoustic Noise While Operating: Instead of skipping cycles at high peak currents, the NCP1217 waits until the peak current demand falls below a user−adjustable 1/3 of the maximum limit. As a result, cycle skipping can take place without having a singing transformer … You can thus select cheap magnetic components free of noise problems. External MOSFET Connection: By leaving the external MOSFET external to the IC, you can select avalanche proof devices, which in certain cases (e.g. low output powers), let you work without an active clamping network. Also, by controlling the MOSFET gate signal flow, you have an option to slow down the device commutation, therefore reducing the amount of ElectroMagnetic Interference (EMI). SPICE Model: A dedicated model to run transient cycle−by−cycle simulations is available but also an averaged version to help you closing the loop. Ready−to−use templates can be downloaded in OrCAD’s Pspice and INTUSOFT’s IsSpice from ON Semiconductor web site, NCP1217 related section. The NCP1217 implements a standard current mode architecture where the switch−off event is dictated by the peak current setpoint. This component represents the ideal candidate where low part−count is the key parameter, particularly in low−cost AC/DC adapters, TV power supplies, etc. Due to its high−performance High−Voltage technology, the NCP1217 incorporates all the necessary components normally needed in UC384X based supplies: timing components, feedback devices, low−pass filter and startup device but also enhances the original component by offering: 1) an externally triggerable latchoff 2) ramp compensation and finally, 3) short−circuit protection. Due to its high−voltage current source, ON Semiconductor’s NCP1217 does not need an external startup resistance but supplies the startup current directly from the high−voltage rail. On the other hand, more and more applications are requiring low no−load standby power, e.g. for AC/DC adapters, VCRs, etc. UC384X series have a lot of difficulty to reduce the switching losses at low power levels. NCP1217 elegantly solves this problem by skipping unwanted switching cycles at a user−adjustable power level. By ensuring that skip cycles take place at low peak current, the device ensures quiet, noise−free operation: Current−Mode Operation: As the UC384X series, the NCP1217 features a well−known current mode control architecture which provides superior input audio− susceptibility compared to traditional voltage−mode controllers. Primary current pulse−by−pulse checking together with a fast over current comparator offers greater security in the event of a difficult fault condition, e.g. a saturating transformer. Ramp Compensation: By inserting a resistor between the current−sense (CS) pin and the actual sense resistor, it becomes possible to inject a given amount of ramp compensation since the internal saw tooth clock is routed to the CS pin. Subharmonic oscillations in Continuous Conduction Mode (CCM) can thus be compensated via a single resistor. Adjustable Skip Cycle Level: By offering the ability to tailor the level at which the skip cycle takes place, the designer can make sure that the skip operation only occurs at low peak current. This point guarantees a noise−free operation with cheap transformers. Skip cycle offers a proven mean to reduce the standby power in no or light loads situations. Wide Switching−Frequency Offer: Three different options are available: 65 kHz – 100 kHz–133 kHz. Depending on the application, the designer can pick up the right device to www.onsemi.com 8 NCP1217, NCP1217A Startup Sequence 12.8 V), the current source turns off and no longer wastes any power. At this time, the VCC capacitor only supplies the controller and the auxiliary supply is supposed to take over before VCC collapses below VCCmin. Figure 16 shows the internal arrangement of this structure. When the power supply is first powered from the mains outlet, the internal current source (typically 7.0 mA) is biased and charges up the VCC capacitor. When the voltage on this VCC capacitor reaches the VCCON level (typically 8 12.8 V/5.6 V + - HV 6 mA or 0 6 CVCC Aux 4 Figure 16. The Current Source Brings VCC Above 12.8 V and then Turns Off level, preventing a bias current to circulate in the optocoupler LED. As a result, the auxiliary voltage also decreases because it also operates in Flyback and thus duplicates the output voltage, providing the leakage inductance between windings is kept low. To account for this situation and properly protect the power supply, NCP1217 hosts a dedicated overload detection circuitry. Once activated, this circuitry imposes to deliver pulses in a burst manner with a low duty−cycle. The system auto−recovers when the fault condition disappears. During the startup phase, the peak current is pushed to the maximum until the output voltage reaches its target and the feedback loop takes over. The auxiliary voltage takes place after a few switching cycles and self−supplies the IC. In presence of a short circuit on the output, the auxiliary voltage will go down until it crosses the undervoltage lockout level of typically 7.6 V. When this happens, NCP1217 immediately stops the switching pulses and unbiases all unnecessary logical blocks. The overall consumption drops, while keeping the gate grounded, and the VCC slowly falls down. As soon as VCC reaches typically 5.6 V, the startup source turns−on again and a new startup sequence occurs, bringing VCC toward 12.8 V as an attempt to restart. If the default has gone, then the power supply normally restarts. If not, a new protective burst is initiated, shielding the SMPS from any runaway. Figure 18 portrays the typical operating signals in short circuit. Once the power supply has started, the VCC shall be constrained below 16 V, which is the maximum rating on Pin 6. Figure 17 portrays a typical startup sequence with a VCC regulated at 12.5 V. 13.5 12.5 REGULATION 12.8 V 11.5 10.5 9.5 3.00 M 8.00 M 13.0 M 18.0 M 23.0 M t, TIME (sec) Figure 17. A Typical Startup Sequence for the NCP1217 Overload Operation In applications where the output current is purposely not controlled (e.g. wall adapters delivering raw DC level), it is interesting to implement a true short−circuit protection. A short−circuit actually forces the output voltage to be at a low www.onsemi.com 9 NCP1217, NCP1217A VCCON = 12.8 V VCCmin = 7.6 V VCC VCClatch = 5.6 V DRIVING PULSES Figure 18. Typical Waveforms in Short Circuit Conditions Calculating the VCC Capacitor The The VCC capacitor can be calculated knowing the IC consumption as soon as VCC reaches 12.8 V. Suppose that a NCP1217P065 is used and drives a MOSFET with a 30 nC total gate charge (Qg). The total average current is thus made of ICC1 (750 A) plus the driver current, Fsw * Qg + 1.95 mA. The total current is therefore 2.7 mA. The V available to fully startup the circuit (e.g. never reach the 8.2 V VCCmin during power on) is 13.7−8.2 + 5.5 V best case or 4.9 V worse case (11.9−7.0) . We have a capacitor that then needs to supply the NCP1217 with 2.7 mA during a given time until the auxiliary supply takes over. Suppose that this time was measured at around 15 ms. CVCC is calculated using the equation C + C w 8.3 F. Select a 22 F/25 V and this will fit. theoretical power transfer is therefore: 1 · Lp · Ip2 · Fsw + 4.1 W. If this IC enters skip cycle 2 mode with a bunch length of 10 ms over a recurrent period of 100 ms, then the total power transfer is: 4.1 * 0.1 + 410 mW. To better understand how this skip cycle mode takes place, a look at the operation mode versus the FB level immediately gives the necessary insight. FB 4.2 V, FB Pin Open 3.2 V, Upper Dynamic Range NORMAL CURRENT MODE OPERATION t · i or V Skipping Cycle Mode SKIP CYCLE OPERATION IP(min) = 333 mV/RSENSE The NCP1217 automatically skips switching cycles when the output power demand drops below a given level. This is accomplished by monitoring the FB pin. In normal operation, pin 2 imposes a peak current accordingly to the load value. If the load demand decreases, the internal loop asks for less peak current. When this setpoint reaches a determined level (Vpin 1), the IC prevents the current from decreasing further down and starts to blank the output pulses: the IC enters the so−called skip cycle mode, also named controlled burst operation. The power transfer now depends upon the width of the pulse bunches (Figure 20). Suppose we have the following component values: 1V Time Figure 19. When FB is above the skip cycle threshold (1.0 V by default), the peak current cannot exceed 1.0 V/Rsense. When the IC enters the skip cycle mode, the peak current cannot go below Vpin1/3.3. The user still has the flexibility to alter this 1.0 V by either shunting pin 1 to ground through a resistor or raising it through a resistor up to the desired level. In this later case, care must be taken to keep sufficient margin between this pin 1 adjustment level and the latchoff level. Grounding pin 1 permanently invalidates the skip cycle operation. Lp, primary inductance = 350 H Fsw, switching frequency = 65 kHz Ip skip = 600 mA (or 333 mV/Rsense) www.onsemi.com 10 NCP1217, NCP1217A Power P1 Power P2 Power P3 Figure 20. Output Pulses at Various Power Levels (X = 5.0 ms/div) P1 t P2 t P3 MAX PEAK CURRENT 300 M SKIP CYCLE CURRENT LIMIT 200 M 100 M 0 315.40 U 882.70 U 1.450 M 2.017 M 2.585 M Figure 21. The Skip Cycle Takes Place at Low Peak Currents which Guarantees Noise−Free Operation Sufficient margin shall be kept between normal Pin1 level and the latchoff point in order to avoid false triggering. Ramp Compensation Continuous Conduction Mode (CCM) with a duty−cycle greater than 50%. To lower the current loop gain, one usually injects between 50 and 100% of the inductor down−slope. Figure 22 depicts how internally the ramp is generated. Ramp compensation is a known mean to cure subharmonic oscillations. These oscillations take place at half the switching frequency and occur only during www.onsemi.com 11 NCP1217, NCP1217A Latching Off the NCP1217 Duty Cycle Typ = 74% Total latched shutdown can easily be implemented through a simple PNP bipolar transistor as depicted by Figure 23. When OFF, Q1 is transparent to the operation. When forward biased, the transistor pulls the Adj pin toward VCC and permanently latches−off the IC as soon Vadj goes above the latching level (typical 3.1 V). Figure 23 shows how to wire the bipolar transistor to activate the latchoff. A typical candidate for Q1 could be an MMBT3906 from ON Semiconductor. 2.9 V 0V 19 k Rcomp + - L.E.B. CS Rsense VCC From Setpoint Figure 22. Inserting a Resistor in Series with the Current Sense Information Brings Ramp Compensation Off In the NCP1217, the ramp features a swing of 2.9 V with a duty cycle max at 74%. Over a 65 kHz frequency, for instance, it corresponds to a 254 mV/s ramp. In our FLYBACK design, let’s suppose that our primary inductance Lp is 350 H, delivering 12 V with a Np:Ns ratio of 1:0.1. The OFF time primary current slope is thus given by: (Vout ) Vf) · Lp Np Ns Q1 Rlimit + 371 mAńs or 37 mVńs when projected over an Rsense of 0.1 , for instance. If we select 75% of the downslope as the required amount of ramp compensation, then we shall inject 27 mV/s. Our internal compensation being of 254 mV/s, the divider ratio (divratio) between Rcomp and the 19 k is 0.106. A few lines of algebra to determine Rcomp: 1 8 2 7 3 6 4 5 CVCC Figure 23. A Simple Bipolar Transistor Totally Disables the IC 19 k · divratio + 2.26 k. (1−divratio) www.onsemi.com 12 NCP1217, NCP1217A VCC The startup current source keeps the device latched until reset occurs. VCCON = 12.8 V VCCmin = 7.6 V VCClatch = 5.6 V Reset level Time Drv Driver Pulses Latched−off Time Adj Default adj level Time Fault brings adj above latching level Figure 24. When Vadj is Pulled Above 3.1 V, NCP1217 Permanently Latches−Off the Output Pulses In normal operation, the Adj pin level is kept at a fixed level, the default one or lower. As soon as some external signal pulls this Adj pin level above 3.1 V typical, the output pulses are permanently disabled. Care must be taken to limit the injected current into pin 1 to less than 2.0 mA, e.g. through a series resistor of 5.6 k with a 10 V VCC. The startup switch is activated every time VCC reaches 5.6 V and maintains a VCC voltage ramping up and down between 5.6 V and 12.8 V. Reset occurs when VCC falls below 5.6 V, e.g. when the user cycle the SMPS down. Figure 25 illustrates the operation. Adding a zener diode from Q1 base to ground makes a cheap OVP, protecting the supply from any lethal open−loop operation. If a thermistor (NTC) is added in parallel with the Zener−diode, overtemperature protection is also ensured. Vaux OVP T 1 8 2 7 3 6 4 5 t16 V CVCC Laux Figure 25. A Thermistor and a Zener Diode Offer Both OVP and Overtemperature Latched−Off Protection Nonlatching Shutdown In some cases, it might be desirable to shut off the part temporarily and authorize its restart once the default has disappeared. This option can easily be accomplished through a single NPN bipolar transistor wired between FB and ground. By pulling FB below the Adj Pin 1 level, the output pulses are disabled as long as FB is pulled below Pin 1. As soon as FB is relaxed, the IC resumes its operation. Figure 26 depicts the application example. www.onsemi.com 13 NCP1217, NCP1217A ON/OFF Q1 1 8 2 7 3 6 4 5 internal parasitic SCRs are triggered, engendering irremediable damages to the IC if a low impedance path is offered between VCC and GND. If the current sense pin is often the seat of such spurious signals, the high−voltage pin can also be the source of problems in certain circumstances. During the turn−off sequence, e.g. when the user unplugs the power supply, the controller is still fed by its VCC capacitor and keeps activating the MOSFET ON and OFF with a peak current limited by Rsense. Unfortunately, if the quality coefficient Q of the resonating network formed by Lp and Cbulk is low (e.g. the MOSFET Rdson + Rsense are small), conditions are met to make the circuit resonate and thus negatively bias the controller. Since we are talking about ms pulses, the amount of injected charge (Q = I * t) immediately latches the controller that brutally discharges its VCC capacitor. If this VCC capacitor is of sufficient value, its stored energy damages the controller. Figure 27 depicts a typical negative shot occurring on the HV pin where the brutal VCC discharge testifies for latchup. Figure 26. Another Way of Shutting Down the IC Without a Definitive Latchoff State Protecting the Controller Against Negative Spikes As with any controller built upon a CMOS technology, it is the designer’s duty to avoid the presence of negative spikes on sensitive pins. Negative signals have the bad habit to forward bias the controller substrate and induce erratic behaviors. Sometimes, the injection can be so strong that www.onsemi.com 14 NCP1217, NCP1217A Vcc 5 V/DIV Vlatch 1 V/DIV Time 10 ms/DIV Figure 27. A Negative Spike Takes Place on the Bulk Capacitor at the Switch−Off Sequence Another option (Figure 29) consists in wiring a diode from VCC to the bulk capacitor to force VCC to reach VCCON sooner and thus stops the switching activity before the bulk capacitor gets deeply discharged. For security reasons, two diodes can be connected in series. Simple and inexpensive cures exist to prevent from internal parasitic SCR activation. One of them consists in inserting a resistor in series with the high−voltage pin to keep the negative current to the lowest when the bulk becomes negative (Figure 28). Please note that the negative spike is clamped to (−2*Vf) thanks to the diode bridge. Also, the power dissipation of this resistor is extremely small since it only heats up during the startup sequence. 3 Rbulk u4.7 k + Cbulk 1 8 2 7 3 6 4 5 + 2 1 + CVCC Figure 28. A simple resistor in series avoids any latch−up in the controller . . . Cbulk 1 8 2 7 3 6 4 5 3 D3 1N4007 1 + CVCC Figure 29. . . . or one diode forces VCC to reach VCCON sooner. www.onsemi.com 15 NCP1217, NCP1217A Soft−Start (NCP1217A only) also activated during the Over Current Burst (OCP) sequence. Every restart attempt is followed by a soft−start activation. Generally speaking, the soft−start will be activated when VCC ramps up either from zero (fresh power−on sequence) or 5.6 V, the latchoff voltage occurring during OCP. Figure 30 portrays the soft−start behavior. The time scales are purposely shifted to offer a better zoom portion. The NCP1217A features an internal 1.0 ms soft−start activated during the power on sequence (PON). As soon as VCC reaches VCCOFF, the peak current is gradually increased from nearly zero up to the maximum clamping level (e.g. 1.0 V). This situation lasts during 1.0 ms and further to that time period, the peak current limit is blocked to 1.0 V until the supply enters regulation. The soft−start is Figure 30. Soft−start is activated during a startup sequence or an OCP condition www.onsemi.com 16 NCP1217, NCP1217A ORDERING INFORMATION Version Marking Package Shipping† NCP1217D65R2G 65 kHz 17D06 SO−8 (Pb−Free) 2500 / Tape & Reel NCP1217D100R2G 100 kHz 17D10 SO−8 (Pb−Free) 2500 / Tape & Reel NCP1217D133R2G 133 kHz 17D13 SO−8 (Pb−Free) 2500 / Tape & Reel NCP1217P65G 65 kHz P1217P065 PDIP−7 (Pb−Free) 50 Units / Rail NCP1217P100G 100 kHz P1217P100 PDIP−7 (Pb−Free) 50 Units / Rail NCP1217P133G 133 kHz N1217P133 PDIP−7 (Pb−Free) 50 Units / Rail NCP1217AD65R2G 65 kHz 17A06 SO−8 (Pb−Free) 2500 / Tape & Reel NCP1217AD100R2G 100 kHz 17A10 SO−8 (Pb−Free) 2500 / Tape & Reel NCP1217AD133R2G 133 kHz 17A13 SO−8 (Pb−Free) 2500 / Tape & Reel NCP1217AP65G 65 kHz 1217AP06 PDIP−7 (Pb−Free) 50 Units / Rail NCP1217AP100G 100 kHz P1217AP10 PDIP−7 (Pb−Free) 50 Units / Rail NCP1217AP133G 133 kHz 1217AP13 PDIP−7 (Pb−Free) 50 Units / Rail Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. www.onsemi.com 17 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP−7 (PDIP−8 LESS PIN 7) CASE 626B ISSUE D DATE 22 APR 2015 SCALE 1:1 D A E H 8 5 E1 1 4 NOTE 8 b2 c B END VIEW TOP VIEW WITH LEADS CONSTRAINED NOTE 5 A2 A e/2 NOTE 3 L SEATING PLANE A1 C D1 M e 8X SIDE VIEW b 0.010 eB END VIEW M C A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACKAGE SEATED IN JEDEC SEATING PLANE GAUGE GS−3. 4. DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE NOT TO EXCEED 0.10 INCH. 5. DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR TO DATUM C. 6. DIMENSION eB IS MEASURED AT THE LEAD TIPS WITH THE LEADS UNCONSTRAINED. 7. DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE LEADS, WHERE THE LEADS EXIT THE BODY. 8. PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE CORNERS). DIM A A1 A2 b b2 C D D1 E E1 e eB L M INCHES MIN MAX −−−− 0.210 0.015 −−−− 0.115 0.195 0.014 0.022 0.060 TYP 0.008 0.014 0.355 0.400 0.005 −−−− 0.300 0.325 0.240 0.280 0.100 BSC −−−− 0.430 0.115 0.150 −−−− 10 ° MILLIMETERS MIN MAX −−− 5.33 0.38 −−− 2.92 4.95 0.35 0.56 1.52 TYP 0.20 0.36 9.02 10.16 0.13 −−− 7.62 8.26 6.10 7.11 2.54 BSC −−− 10.92 2.92 3.81 −−− 10 ° NOTE 6 GENERIC MARKING DIAGRAM* STYLE 1: PIN 1. AC IN 2. DC + IN 3. DC − IN 4. AC IN 5. GROUND 6. OUTPUT 7. NOT USED 8. VCC XXXXXXXXX AWL YYWWG XXXX A WL YY WW G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON12198D Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PDIP−7 (PDIP−8 LESS PIN 7) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK 8 1 SCALE 1:1 −X− DATE 16 FEB 2011 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S 8 8 1 1 IC 4.0 0.155 XXXXX A L Y W G IC (Pb−Free) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package XXXXXX AYWW 1 1 Discrete XXXXXX AYWW G Discrete (Pb−Free) XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 1.270 0.050 SCALE 6:1 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 8 8 XXXXX ALYWX G XXXXX ALYWX 1.52 0.060 0.6 0.024 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 7.0 0.275 DIM A B C D G H J K M N S mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−8 NB CASE 751−07 ISSUE AK DATE 16 FEB 2011 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER STYLE 2: PIN 1. COLLECTOR, DIE, #1 2. COLLECTOR, #1 3. COLLECTOR, #2 4. COLLECTOR, #2 5. BASE, #2 6. EMITTER, #2 7. BASE, #1 8. EMITTER, #1 STYLE 3: PIN 1. DRAIN, DIE #1 2. DRAIN, #1 3. DRAIN, #2 4. DRAIN, #2 5. GATE, #2 6. SOURCE, #2 7. GATE, #1 8. SOURCE, #1 STYLE 4: PIN 1. ANODE 2. ANODE 3. ANODE 4. ANODE 5. ANODE 6. ANODE 7. ANODE 8. COMMON CATHODE STYLE 5: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. DRAIN 5. GATE 6. GATE 7. SOURCE 8. SOURCE STYLE 6: PIN 1. SOURCE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. GATE 7. GATE 8. SOURCE STYLE 7: PIN 1. INPUT 2. EXTERNAL BYPASS 3. THIRD STAGE SOURCE 4. GROUND 5. DRAIN 6. GATE 3 7. SECOND STAGE Vd 8. FIRST STAGE Vd STYLE 8: PIN 1. COLLECTOR, DIE #1 2. BASE, #1 3. BASE, #2 4. COLLECTOR, #2 5. COLLECTOR, #2 6. EMITTER, #2 7. EMITTER, #1 8. COLLECTOR, #1 STYLE 9: PIN 1. EMITTER, COMMON 2. COLLECTOR, DIE #1 3. COLLECTOR, DIE #2 4. EMITTER, COMMON 5. EMITTER, COMMON 6. BASE, DIE #2 7. BASE, DIE #1 8. EMITTER, COMMON STYLE 10: PIN 1. GROUND 2. BIAS 1 3. OUTPUT 4. GROUND 5. GROUND 6. BIAS 2 7. INPUT 8. GROUND STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 14: PIN 1. N−SOURCE 2. N−GATE 3. P−SOURCE 4. P−GATE 5. P−DRAIN 6. P−DRAIN 7. N−DRAIN 8. N−DRAIN STYLE 15: PIN 1. ANODE 1 2. ANODE 1 3. ANODE 1 4. ANODE 1 5. CATHODE, COMMON 6. CATHODE, COMMON 7. CATHODE, COMMON 8. CATHODE, COMMON STYLE 16: PIN 1. EMITTER, DIE #1 2. BASE, DIE #1 3. EMITTER, DIE #2 4. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE #1 8. COLLECTOR, DIE #1 STYLE 17: PIN 1. VCC 2. V2OUT 3. V1OUT 4. TXE 5. RXE 6. VEE 7. GND 8. ACC STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE STYLE 19: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. MIRROR 2 7. DRAIN 1 8. MIRROR 1 STYLE 20: PIN 1. SOURCE (N) 2. GATE (N) 3. SOURCE (P) 4. GATE (P) 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 21: PIN 1. CATHODE 1 2. CATHODE 2 3. CATHODE 3 4. CATHODE 4 5. CATHODE 5 6. COMMON ANODE 7. COMMON ANODE 8. CATHODE 6 STYLE 22: PIN 1. I/O LINE 1 2. COMMON CATHODE/VCC 3. COMMON CATHODE/VCC 4. I/O LINE 3 5. COMMON ANODE/GND 6. I/O LINE 4 7. I/O LINE 5 8. COMMON ANODE/GND STYLE 23: PIN 1. LINE 1 IN 2. COMMON ANODE/GND 3. COMMON ANODE/GND 4. LINE 2 IN 5. LINE 2 OUT 6. COMMON ANODE/GND 7. COMMON ANODE/GND 8. LINE 1 OUT STYLE 24: PIN 1. BASE 2. EMITTER 3. COLLECTOR/ANODE 4. COLLECTOR/ANODE 5. CATHODE 6. CATHODE 7. COLLECTOR/ANODE 8. COLLECTOR/ANODE STYLE 25: PIN 1. VIN 2. N/C 3. REXT 4. GND 5. IOUT 6. IOUT 7. IOUT 8. IOUT STYLE 26: PIN 1. GND 2. dv/dt 3. ENABLE 4. ILIMIT 5. SOURCE 6. SOURCE 7. SOURCE 8. VCC STYLE 29: PIN 1. BASE, DIE #1 2. EMITTER, #1 3. BASE, #2 4. EMITTER, #2 5. COLLECTOR, #2 6. COLLECTOR, #2 7. COLLECTOR, #1 8. COLLECTOR, #1 STYLE 30: PIN 1. DRAIN 1 2. DRAIN 1 3. GATE 2 4. SOURCE 2 5. SOURCE 1/DRAIN 2 6. SOURCE 1/DRAIN 2 7. SOURCE 1/DRAIN 2 8. GATE 1 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB STYLE 27: PIN 1. ILIMIT 2. OVLO 3. UVLO 4. INPUT+ 5. SOURCE 6. SOURCE 7. SOURCE 8. DRAIN STYLE 28: PIN 1. SW_TO_GND 2. DASIC_OFF 3. DASIC_SW_DET 4. GND 5. V_MON 6. VBULK 7. VBULK 8. VIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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