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NCP1294EDBR2G

NCP1294EDBR2G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TSSOP16

  • 描述:

    Converter Offline Boost, Flyback, Forward Topology 1MHz 16-TSSOP

  • 数据手册
  • 价格&库存
NCP1294EDBR2G 数据手册
DATA SHEET www.onsemi.com Flyback, Boost, Forward PWM Controller 16 SOIC−16 D SUFFIX CASE 751B 1 NCP1294 The NCP1294 fixed frequency feed forward voltage mode PWM controller contains all of the features necessary to be configured in a Flyback, Boost or Forward topology. This PWM controller has been optimized for high frequency primary side control operation. In addition, this device includes such features as: Soft−Start, accurate duty cycle limit control, less than 50mA startup current, over and undervoltage protection, and bidirectional synchronization. The NCP1294 is available in a 16 lead SOIC narrow surface mount package. TSSOP−16 DB SUFFIX CASE 948F 16 1 PIN CONNECTIONS AND MARKING DIAGRAM GATE • • • • • • • • • • • • • • • • 1.0 MHz Frequency Capability Fixed Frequency Voltage Mode Operation, with Feed Forward Thermal Shutdown Undervoltage Lock−Out Accurate Programmable Max Duty Cycle Limit 1.0 A Sink/Source Gate Drive Programmable Pulse−By−Pulse Overcurrent Protection Leading Edge Current Sense Blanking 75 ns Shutdown Propagation Delay Programmable Soft−Start Undervoltage Protection Overvoltage Protection with Programmable Hysteresis Bidirectional Synchronization 25 ns GATE Rise and Fall Time (1.0 nF Load) 3.3 V 3% Reference Voltage Output These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ISENSE SYNC FF UV OV RTCT ISET 16 1 16 NCP1294EG AWLYWW Features 1 VC PGND VCC VREF LGND SS COMP VFB NCP 1294 ALYW G NCP1294= Specific Device Code A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week G or G = Pb−Free Package ORDERING INFORMATION Package Shipping† SOIC−16 (Pb−Free) 2500 Tape & Reel NCP1294EDBR2G TSSOP−16 (Pb−Free) 2500 Tape & Reel Device NCP1294EDR2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2009 August, 2021 − Rev. 1 1 Publication Order Number: NCP1294/D 1.0 mF 10 k 330 pF 200 2200 pF 0.01 mF 0.22 mF 11 V 51 k VIN (36 V to 72 V) GATE ISENSE PGND SS LGND FF ISET OV UV VCC 10 22 mF 18 V SYNC RTCT VFB COMP VREF VC FZT688 NCP1294 Figure 1. Application Diagram, 36 V−72 V to 5.0 V/5.0 A Converter www.onsemi.com 2 150 470 pF 5.6 k 10 13 k 4.3 k D11 BAS21 10 k T3 100:1 180 100 pF MOC81025 62 IRF634 100 1.0 mF 510 k 1.0 k 20.25 k 24.3 k 4700 pF 0.1 mF 160 k BAS21 10 680 pF 10 TL431 0.1 mF 5.1 k 2.0 k 100 mF 2.0 k MBRB2545CT D13 V33MLA1206A23 1.0 k T1 4:1 T2 2:5 SGND VOUT (5.0 V/5.0 A) NCP1294 NCP1294 MAXIMUM RATINGS Rating Operating Junction Temperature, TJ Lead Temperature Soldering: Reflow: (SMD styles only) (Note 1) Storage Temperature Range, TS ESD (Human Body Model) Value Unit Internally Limited − 230 peak °C −65 to +150 °C 2.0 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. 60 second maximum above 183°C. MAXIMUM RATINGS Pin Name Pin Symbol VMAX VMIN ISOURCE ISINK Gate Drive Output GATE 15 V −0.3 V 1.0 A Peak, 200 mA DC 1.0 A Peak, 200 mA DC Current Sense Input ISENSE 6.0 V −0.3 V 1.0 mA 1.0 mA Timing Resistor/Capacitor RTCT 6.0 V −0.3 V 1.0 mA 10 mA Feed Forward FF 6.0 V −0.3 V 1.0 mA 25 mA Error Amp Output COMP 6.0 V −0.3 V 10 mA 20 mA Feedback Voltage VFB 6.0 V −0.3 V 1.0 mA 1.0 mA Sync Input SYNC 6.0 V −0.3 V 10 mA 10 mA Undervoltage UV 6.0 V −0.3 V 1.0 mA 1.0 mA Overvoltage OV 6.0 V −0.3 V 1.0 mA 1.0 mA Current Set ISET 6.0 V −0.3 V 1.0 mA 1.0 mA Soft−Start SS 6.0 V −0.3 V 1.0 mA 10 mA Logic Section Supply VCC 15 V −0.3 V 10 mA 50 mA Power Section Supply VC 15 V −0.3 V 10 mA 1.0 A Peak, 200 mA DC Reference Voltage VREF 6.0 V −0.3 V lnternally Limited 10 mA Power Ground PGND N/A N/A 1.0 A Peak, 200 mA DC N/A Logic Ground LGND N/A N/A N/A N/A ELECTRICAL CHARACTERISTICS (−40°C < TA < 85°C; −40°C < TJ < 125°C; 3.0 V < VC < 15 V; 4.7 V < VCC < 15 V; RT = 12 k; CT = 390 pF; unless otherwise specified.) Characteristic Test Conditions Min Typ Max Unit − 4.4 4.6 4.7 V Start/Stop Voltages Start Threshold Stop Threshold − Hysteresis Start−Stop ICC @ Startup VCC < UVL Start Threshold 3.2 3.8 4.1 V 400 850 1400 mV − 38 75 mA − 9.5 14 mA Supply Current ICC Operating − IC Operating 1.0 nF Load on GATE − 12 18 mA IC Operating No Switching − 2.0 4.0 mA www.onsemi.com 3 NCP1294 ELECTRICAL CHARACTERISTICS (−40°C < TA < 85°C; −40°C < TJ < 125°C; 3.0 V < VC < 15 V; 4.7 V < VCC < 15 V; RT = 12 k; CT = 390 pF; unless otherwise specified.) Characteristic Test Conditions Min Typ Max Unit 3.2 3.3 3.4 V Reference Voltage Total Accuracy 0 mA < IREF < 2.0 mA Line Regulation − 6.0 20 mV Load Regulation 0 mA < IREF < 2.0 mA − − 6.0 15 mV Noise Voltage 10 Hz < F < 10 kHz. Note 2 − 50 − mV Op Life Shift T = 1000 Hrs. Note 2 − 4.0 20 mV Fault Voltage − 2.8 2.95 3.1 V VREF(OK) Voltage − 2.9 3.05 3.2 V VREF(OK) Hysteresis − 30 100 150 mV Current Limit − 2.0 40 100 mA Error Amp Reference Voltage VFB = COMP 1.234 1.263 1.285 V VFB Input Current VFB = 1.2 V − 1.3 2.0 mA Open Loop Gain Note 2 60 − − dB Unity Gain Bandwidth Note 2 1.5 − − MHz COMP Sink Current COMP = 1.4 V, VFB = 1.45 V 3.0 12 32 mA COMP Source Current COMP = 1.4 V, VFB = 1.15 V 1.0 1.6 2.0 mA COMP High Voltage VFB = 1.15 V 2.8 3.1 3.4 V COMP Low Voltage VFB = 1.45 V 75 125 300 mV PSRR Freq = 120 Hz. Note 2 60 85 − dB SS Clamp, VCOMP SS = 1.4 V, VFB = 0 V, ISET = 2.0 V 1.3 1.4 1.5 V COMP Max Clamp Note 2 1.7 1.8 1.9 V Oscillator Frequency Accuracy − 260 273 320 kHz Voltage Stability − − 1.0 2.0 % − 8.0 − % 1.0 − − MHz 80 85 90 % 1.94 2.0 2.06 V Temperature Stability −40°C < TJ < 125°C. (Note 2) Max Frequency Note 2 Duty Cycle Peak Voltage − Note 2 Valley Clamp Voltage 0.9 0.95 1.0 V 0.85 1.0 1.15 V − 0.85 1.0 1.15 mA Input Threshold − 0.9 1.4 1.8 V Output Pulse Width − 200 320 450 ns 2.1 2.5 2.8 V 35 70 140 kW Valley Voltage − Note 2 Discharge Current Synchronization Output High Voltage 100 mA Load Input Resistance − SYNC to Drive Delay Time from SYNC to GATE Shutdown 100 140 180 ns Output Drive Current RSYNC = 1.0 W 1.0 1.5 2.25 mA 2. Guaranteed by design, not 100% tested in production. www.onsemi.com 4 NCP1294 ELECTRICAL CHARACTERISTICS (−40°C < TA < 85°C; −40°C < TJ < 125°C; 3.0 V < VC < 15 V; 4.7 V < VCC < 15 V; RT = 12 k; CT = 390 pF; unless otherwise specified.) Characteristic Test Conditions Min Typ Max Unit − 1.5 2.0 V Gate Driver High Saturation Voltage VC − GATE, VC = 10 V, ISOURCE = 200 mA Low Saturation Voltage GATE − PGND, ISINK = 200 mA High Voltage Clamp − − 1.2 1.5 V 11 13.5 16 V Output Current 1.0 nF Load. Note 3 − 1.0 1.25 A Output UVL Leakage GATE = 0 V − 1.0 50 mA Rise Time 1.0 nF Load, VC = 20 V, 1.0 V < GATE < 9.0 V − 60 100 ns Fall Time 1.0 nF Load, VC = 20 V, 9.0 V < GATE < 1.0 V − 25 50 ns Max Gate Voltage During UVL/Sleep IGATE = 500 mA 0.4 0.7 1.0 V − 0.3 0.7 V 2.0 16 30 mA 50 75 125 ns 0.475 0.5 0.525 V 50 90 125 ns Feed Forward (FF) Discharge Voltage IFF = 2.0 mA Discharge Current FF = 1.0 V FF to GATE Delay − Overcurrent Protection Overcurrent Threshold ISET = 0.5 V, Ramp ISENSE ISENSE to GATE Delay − External Voltage Monitors Overvoltage Threshold OV Increasing 1.9 2.0 2.1 V Overvoltage Hysteresis Current OV = 2.15 V 10 12.5 15 mA Undervoltage Threshold UV Increasing 0.95 1.0 1.05 V 25 75 125 mV Undervoltage Hysteresis − Soft−Start (SS) Charge Current SS = 2.0 V 40 50 70 mA Discharge Current SS = 2.0 V 4.0 5.0 7.0 mA Charge Voltage − 2.8 3.0 3.4 V Discharge Voltage − 0.25 0.3 0.35 V 1.15 1.25 1.35 V − 0.1 0.2 V 50 150 250 ns Soft−Start Clamp Offset FF = 1.25 V Soft−Start Fault Voltage OV = 2.15 V or LV = 0.85 V Blanking Blanking Time − SS Blanking Disable Threshold VFB < 1.0 2.8 3.0 3.3 V COMP Blanking Disable Threshold VFB < 1.0, SS > 3.0 V 2.8 3.0 3.3 V Thermal Shutdown Note 3 125 150 180 °C Thermal Hysteresis Note 3 5.0 10 15 °C Thermal Shutdown 3. Guaranteed by design, not 100% tested in production. www.onsemi.com 5 NCP1294 PACKAGE PIN DESCRIPTION Package Pin # Pin Symbol Function 1 GATE External power switch driver with 1.0 A peak capability. Rail to rail output occurs when the capacitive load is between 470 pF and 10 nF. 2 ISENSE Current sense comparator input. 3 SYNC Bidirectional synchronization. Locks to highest frequency. 4 FF PWM ramp. 5 UV Undervoltage protection monitor. 6 OV Overvoltage protection monitor. 7 RTCT Timing resistor RT and capacitor CT determine oscillator frequency and maximum duty cycle, DMAX. 8 ISET Voltage at this pin sets pulse−by−pulse overcurrent threshold. 9 VFB Feedback voltage input. Connected to the error amplifier inverting input. 10 COMP 11 SS 12 LGND Logic ground. 13 VREF 3.3 V reference voltage output. Decoupling capacitor can be selected from 0.01 mF to 10 mF. 14 VCC Logic supply voltage. 15 PGND 16 VC Error amplifier output. Charging external capacitor restricts error amplifier output voltage during the power up or fault conditions. Output power stage ground. Output power stage supply voltage. www.onsemi.com 6 NCP1294 VCC 2.0 mA (maximum load current) 3.3 V + UVL − + − ENABLE VREF = 3.3 V − Thermal Shutdown VREF OK + 3.1 V UV Lockout Start/Stop Low Sat Gate Driver S RTCT OSC VBG (1.263 V) VFB G2 2.0 V to 1.0 V Trip Points 3.0 V + EAMP − R VC Q GATE G1 SYNC VREF 13.5 V Q PGND − Max Duty Cycle + (Sat Sense) VREF 50 mA SS to 1.8 V Max + + − COMP Soft−Start Clamp LGND PWM Comp ON − FF FF Discharge VO Off G4 G3 DISABLE 150 ns Blank − OV Monitor Max SS Det + ISET Latching Discharge ILIM − 3.0 V SS 5.0 mA + OV − 2.0 V + (Sat Sense) ISENSE UV Monitor − + Figure 2. Block Diagram www.onsemi.com 7 UV 1.0 V NCP1294 APPLICATION INFORMATION THEORY OF OPERATION VOUT Feed Forward Voltage Mode Control In conventional voltage mode control, the ramp signal has fixed rising and falling slope. The feedback signal is derived solely from the output voltage. Consequently, voltage mode control has inferior line regulation and audio susceptibility. Feed forward voltage mode control derives the ramp signal from the input line, as shown in Figure 3. Therefore, the ramp of the slope varies with the input voltage. At the start of each switch cycle, the capacitor connected to the FF pin is charged through a resistor connected to the input voltage. Meanwhile, the Gate output is turned on to drive an external power switching device. When the FF pin voltage reaches the error amplifier output VCOMP, the PWM comparator turns off the Gate, which in turn opens the external switch. Simultaneously, the FF capacitor is quickly discharged to 0.3 V. Overall, the dynamics of the duty cycle are controlled by both input and output voltages. As illustrated in Figure 4, with a fixed input voltage the output voltage is regulated solely by the error amplifier. For example, an elevated output voltage reduces VCOMP which in turn causes duty cycle to decrease. However, if the input voltage varies, the slope of the ramp signal will react immediately which provides a much improved line transient response. As an example shown in Figure 5, when the input voltage goes up, the rising edge of the ramp signal increases which reduces duty cycle to counteract the change. VIN VCOMP FF VIN RTCT GATE Figure 4. Pulse Width Modulated by Output Current with Constant Input Voltage VIN VCOMP FF IOUT RTCT VOUT Power Stage GATE GATE R Figure 5. Pulse Width Modulated by Input Voltage with Constant Output Current Latch & Driver Feedback Network FF Powering the IC & UVL PWM COMP The Undervoltage Lockout (UVL) comparator has two voltage references; the start and stop thresholds. During power−up, the UVL comparator disables VREF (which in−turn disables the entire IC) until the controller reaches its VCC start threshold. During power−down, the UVL comparator allows the controller to operate until the VCC stop threshold is reached. The NCP1294 requires only 50 mA during startup. The output stage is held at a low impedance state in lock out mode. During power up and fault conditions, the Soft−Start clamps the Comp pin voltage and limits the duty cycle. The power up transition tends to generate temporary duty cycles much greater than the steady state value due to the low output voltage. Consequently, excessive current stresses often take place in the system. Soft−Start technique alleviates this problem by gradually releasing the clamp on the duty cycle to eliminate the in−rush current. The duration FB − + C Error Amplifier + − Figure 3. Feed Forward Voltage Mode Control The feed forward feature can also be employed to provide a volt−second clamp, which limits the maximum product of input voltage and turn on time. This clamp is used in circuits, such as Forward and Flyback converter, to prevent the transformer from saturating. Calculations used in the design of the volt−second clamp are presented in the Design Guidelines section. www.onsemi.com 8 NCP1294 of the Soft−Start can be programmed through a capacitance connected to the SS pin. The constant charging current to the SS pin is 50 mA (typ). The VREF (ok) comparator monitors the 3.3 V VREF output and latches a fault condition if VREF falls below 3.1 V. The fault condition may also be triggered when the OV pin voltage rises above 2.0 V or the UV pin voltage falls below 1.0 V. The undervoltage comparator has a built−in hysteresis of 75 mV (typ). The hysteresis for the OV comparator is programmable through a resistor connected to the OV pin. When an OV condition is detected, the overvoltage hysteresis current of 12.5 mA (typ) is sourced from the pin. In Figure 6, the fault condition is triggered by pulling the UV pin to the ground. Immediately, the SS capacitor is discharged with 5.0 mA of current (typ) and the GATE output is disabled until the SS voltage reaches the discharge voltage of 0.3 V (typ). The IC starts the Soft−Start transition again if the fault condition has recovered as shown in Figure 6. However, if the fault condition persists, the SS voltage will stay at 0.1 V until the removal of the fault condition. Figure 7. The GATE Output Is Terminated When the ISENSE Pin Voltage Reaches the Threshold Set By the ISET Pin. CH2: ISENSE Pin, CH4: ISET Pin, CH3: GATE Pin The current sense signal is prone to leading edge spikes caused by the switching transition. A RC low−pass filter is usually applied to the current signals to avoid premature triggering. However, the low pass filter will inevitably change the shape of the current pulse and also add cost. The NCP1294 uses leading edge blanking circuitry that blocks out the first 150 ns (typ) of each current pulse. This removes the leading edge spikes without altering the current waveform. The blanking is disabled during Soft−Start and when the VCOMP is saturated high so that the minimum on−time of the controller does not have the additional blanking period. The max SS detect comparator keeps the blanking function disabled until SS charges fully. The output of the max Duty Cycle detector goes high when the error amplifier output gets saturated high, indicating that the output voltage has fallen well below its regulation point and the power supply may be underload stress. Figure 6. The Fault Condition Is Triggered when the UV Pin Voltage Falls Below 1.0 V. The Soft−Start Capacitor Is Discharged and the GATE Output Is Disabled. CH2: Envelop of GATE Output, CH3: SS Pin with 0.01 mF Capacitor, CH4: UV Pin Oscillator and Synchronization The switching frequency is programmable through a RC network connected to the RTCT Pin. As shown in Figure 8, when the RTCT pin reaches 2.0 V, the capacitor is discharged by a 1.0 mA current source and the Gate signal is disabled. When the RTCT pin decreases to 1.0 V, the Gate output is turned on and the discharge current is removed to let the RTCT pin ramp up. This begins a new switching cycle. The CT charging time over the switch period sets the maximum duty cycle clamp which is programmable through the RT value as shown in the Design Guidelines. At the beginning of each switching cycle, the SYNC pin generates a 2.5 V, 320 nS (typ) pulse. This pulse can be utilized to synchronize other power supplies. Current Sense and Overcurrent Protection The current can be monitored by the ISENSE pin to achieve pulse by pulse current limit. Various techniques, such as a using current sense resistor or current transformer, can be adopted to derive current signals. The voltage of the ISET pin sets the threshold for maximum current. As shown in Figure 7, when the ISENSE pin voltage exceeds the ISET voltage, the current limit comparator will reset the GATE latch flip−flop to terminate the GATE pulse. www.onsemi.com 9 NCP1294 DESIGN GUIDELINES Switch Frequency and Maximum Duty Cycle Calculations Oscillator timing capacitor, CT, is charged by VREF through RT and discharged by an internal current source. During the discharge time, the internal clock signal sets the Gate output to the low state, thus providing a user selectable maximum duty cycle clamp. Charge and discharge times are determined by following general formulas; * VVALLEY) ǒ(V(VREF Ǔ REF * VPEAK) tC + RTCT ln ǒ (VREF * VPEAK * IdRT) td + RTCT ln (VREF * VVALLEY * IdRT) Ǔ where: tC = charging time; td = discharging time; VVALLEY = valley voltage of the oscillator; VPEAK = peak voltage of the oscillator. Substituting in typical values for the parameters in the above formulas, VREF = 3.3 V, VVALLEY = 1.0 V, VPEAK = 2.0 V, Id = 1.0 mA: Figure 8. The SYNC Pin Generates a Sync Pulse at the Beginning of Each Switching Cycle. CH2: GATE Pin, CH3: RTCT, CH4: SYNC Pin tC + 0.57RTCT ǒ 1.3 * 0.001RT td + RTCT ln 2.3 * 0.001RT D max + Ǔ 0.57 TǓ 0.57 ) Inǒ1.3*0.001R 2.3*0.001R T It is noticed from the equation that for the oscillator to function properly, RT has to be greater than 2.3 k. Select RC for Feed Forward Ramp If the line voltage is much greater than the FF pin Peak Voltage, the charge current can be treated as a constant and is equal to VIN/R. Therefore, the volt−second value is determined by: VIN Figure 9. Operation with External Sync. CH2: SYNC Pin, CH3: GATE Pin, CH4: RTCT Pin TON + (VCOMP * VFF(d)) R C where: VCOMP = COMP pin voltage; VFF(d) = FF pin discharge voltage. As shown in the equation, the volt−second clamp is set by the VCOMP clamp voltage which is equal to 1.8 V. In Forward or Flyback circuits, the volt−second clamp value is designed to prevent transformers from saturation. In a buck or forward converter, volt−second is equal to An external pulse signal can feed to the bidirectional SYNC pin to synchronize the switch frequency. For reliable operation, the sync frequency should be approximately 20% higher than free running IC frequency. As show in Figure 9, when the SYNC pin is triggered by an incoming signal, the IC immediately discharges CT. The GATE signal is turned on once the RTCT pin reaches the valley voltage. Because of the steep falling edge, this valley voltage falls below the regular 1.0 V threshold. However, the RTCT pin voltage is then quickly raised by a clamp. When the RTCT pin reaches the 0.95 V (typ) Valley Clamp Voltage, the clamp is disconnected after a brief delay and CT is charged through RT. VIN TON + ǒVOUTn TS Ǔ n = transformer turns ratio, which is a constant determined by the regulated output voltage, switching period and transformer turns ration (use 1.0 for buck converter). It is interesting to notice from the aforementioned two equations www.onsemi.com 10 NCP1294 800 1.00 0.95 700 0.90 RT = 5.0 K 500 400 Duty Cycle (%) Frequency (kHz) 600 RT = 10 K 300 200 0.85 0.80 0.75 0.70 0.65 0.60 100 0 0.0001 0.55 RT = 50 K 0.50 1000 0.01 0.001 RT (W) Figure 10. Typical Performance Characteristics, Oscillator Frequency vs. CT Figure 11. Typical Performance Characteristics, Oscillator Duty Cycle vs. RT that during steady state, VCOMP doesn’t change for input voltage variations. This intuitively explains why FF voltage mode control has superior line regulation and line transient response. Knowing the nominal value of VIN and TON, one can also select the value of RC to place VCOMP at the center of its dynamic range. 12.5 mA (R1 ) R2) + VHYST As shown in Figure 12, the voltage divider output feeds to the FB pin, which connects to the inverting input of the error amplifier. The non−inverting input of the error amplifier is connected to a 1.27 V (typ) reference voltage. The FB pin has an input current which has to be considered for accurate DC outputs. The following equation can be used to calculate the R1 and R2 value VOUT Ier Ǔ R2 V + 1.27 * ʼn R1 ) R2 OUT − where ∇ is the correction factor due to the existence of the FB pin input current Ier. COMP + − In Figure 13, the voltage divider uses three resistors in series to set OV and UV threshold seen from the input voltage. The values of the resistors can be calculated from the following three equations, where the third equation is derived from OV hysteresis requirement. VIN(HIGH) R3 ǒR2 ) R3 Ǔ + 2.0 V ) R1 (B) 1.27 R2 Figure 12. The Design of Feedback Voltage Divider Has to Consider the Error Amplifier Input Current Design Voltage Dividers for OV and UV Detection (A) FB + Ri = DC resistance between the FB pin and the voltage divider output. Ier = VFB input current, 1.3 mA typical. ) R3 Ǔ + 1.0 V ǒR2 R2 ) R3 ) R1 R1 Ri ʼn + (Ri ) R1ńńR2)Ier VIN(LOW) (C) where: VIN(LOW), VIN(HIGH) = input voltage OV and UV threshold; VHYST = OV hysteresis seen at VIN It is self−evident from equation A and B that to use this design, VIN(HIGH) has to be two times greater than VIN(LOW). Otherwise, two voltage dividers have to be used to program OV and UV separately. Select Feedback Voltage Divider ǒ 1000000 100000 10000 CT (mF) R1 R2 R3 VIN VUV VOV Figure 13. OV/UV Monitor Divider www.onsemi.com 11 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−16 CASE 751B−05 ISSUE K DATE 29 DEC 2006 SCALE 1:1 −A− 16 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 −B− 1 P 8 PL 0.25 (0.010) 8 M B S G R K F X 45 _ C −T− SEATING PLANE J M D DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 16 PL 0.25 (0.010) M T B S A S STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE STYLE 3: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR, DYE #1 BASE, #1 EMITTER, #1 COLLECTOR, #1 COLLECTOR, #2 BASE, #2 EMITTER, #2 COLLECTOR, #2 COLLECTOR, #3 BASE, #3 EMITTER, #3 COLLECTOR, #3 COLLECTOR, #4 BASE, #4 EMITTER, #4 COLLECTOR, #4 STYLE 4: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. STYLE 5: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. DRAIN, DYE #1 DRAIN, #1 DRAIN, #2 DRAIN, #2 DRAIN, #3 DRAIN, #3 DRAIN, #4 DRAIN, #4 GATE, #4 SOURCE, #4 GATE, #3 SOURCE, #3 GATE, #2 SOURCE, #2 GATE, #1 SOURCE, #1 STYLE 6: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE STYLE 7: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. SOURCE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE P‐CH SOURCE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE N‐CH COLLECTOR, DYE #1 COLLECTOR, #1 COLLECTOR, #2 COLLECTOR, #2 COLLECTOR, #3 COLLECTOR, #3 COLLECTOR, #4 COLLECTOR, #4 BASE, #4 EMITTER, #4 BASE, #3 EMITTER, #3 BASE, #2 EMITTER, #2 BASE, #1 EMITTER, #1 SOLDERING FOOTPRINT 8X 6.40 16X 1 1.12 16 16X 0.58 1.27 PITCH 8 9 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98ASB42566B SOIC−16 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP−16 CASE 948F−01 ISSUE B 16 DATE 19 OCT 2006 1 SCALE 2:1 16X K REF 0.10 (0.004) 0.15 (0.006) T U M T U S V S K S ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ K1 2X L/2 16 9 J1 B −U− L SECTION N−N J PIN 1 IDENT. N 8 1 0.25 (0.010) M 0.15 (0.006) T U S A −V− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. N F DETAIL E −W− C 0.10 (0.004) −T− SEATING PLANE D H G DETAIL E DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT 7.06 16 XXXX XXXX ALYW 1 1 0.65 PITCH 16X 0.36 DOCUMENT NUMBER: DESCRIPTION: 16X 1.26 98ASH70247A TSSOP−16 DIMENSIONS: MILLIMETERS XXXX A L Y W G or G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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NCP1294EDBR2G 价格&库存

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NCP1294EDBR2G
    •  国内价格
    • 2500+5.15000

    库存:2500