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NCP136AFCT110T2G

NCP136AFCT110T2G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    XFBGA6

  • 描述:

    IC REG LINEAR 1.1V 700MA 6WLCSP

  • 数据手册
  • 价格&库存
NCP136AFCT110T2G 数据手册
LDO Regulator - Very Low Dropout, CMOS, Bias Rail 700 mA NCP136 The NCP136 is a 700 mA VLDO equipped with NMOS pass transistor and a separate bias supply voltage (VBIAS). The device provides very stable, accurate output voltage with low noise suitable for space constrained, noise sensitive applications. In order to optimize performance for battery operated portable applications, the NCP136 features low IQ consumption. The WLCSP6 1.4 mm x 0.8 mm Chip Scale package is optimized for use in space constrained applications. Features • • • • • • • • • • • • • www.onsemi.com Input Voltage Range: VOUT to 5.5 V Bias Voltage Range: 2.5 V to 5.5 V Fixed or Adjustable Voltage Version Available Output Voltage Range: 0.4 V to 1.8 V (Fixed) ±1% Accuracy over Temperature, 0.5% VOUT @ 25°C Ultra−Low Dropout: Typ. 40 mV at 700 mA Very Low Bias Input Current of Typ. 80 mA Very Low Bias Input Current in Disable Mode: Typ. 0.5 mA Logic Level Enable Input for ON/OFF Control Output Active Discharge Option Available Stable with a 10 mF Ceramic Capacitor Available in WLCSP6 − 1.4 mm x 0.8 mm, 0.4 mm pitch Package These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Battery−powered Equipment • Smartphones, Tablets • Cameras, DVRs, STB and Camcorders WLCSP6, 1.4x0.8x0.37 CASE 567YU WLCSP6, 1.4x0.8x0.33 CASE 567XK MARKING DIAGRAM XXM XX = Specific Device Code M = Month Code PIN CONNECTIONS 1 2 A OUT IN B SNS/ADJ EN C GND BIAS VBIAS CBIAS 1 mF BIAS VIN CIN 4.7 mF VOUT OUT IN NCP136FIX SNS EN GND Top View COUT 10 mF ORDERING INFORMATION See detailed ordering, marking and shipping information on page 12 of this data sheet. OFF ON Figure 1. Typical Application Schematic − Fixed Voltage Version © Semiconductor Components Industries, LLC, 2019 January, 2021 − Rev. 5 1 Publication Order Number: NCP136/D NCP136 VBIAS CBIAS 1 mF VOUT BIAS VIN IN EN CIN 4.7 mF OUT NCP136 0.4 V ADJ R1 CFF GND ON COUT 10 mF R2 OFF Figure 2. Typical Application Schematic − Adjustable Voltage Version CURRENT LIMIT IN EN BIAS OUT ENABLE BLOCK 150 W *Active DISCHARGE UVLO VOLTAGE REFERENCE + − THERMAL LIMIT SNS/ADJ GND *Active output discharge function is present only in NCP136A and NCP136C option devices. Figure 3. Simplified Schematic Block Diagram www.onsemi.com 2 NCP136 PIN FUNCTION DESCRIPTION Pin No. WLCSP6 Pin Name A1 OUT A2 IN B1 SNS/ADJ Feedback / adjustable input pin (connect this pin directly to the OUT pin or to the resistor divider) B2 EN Enable pin. Driving this pin high enables the regulator. Driving this pin low puts the regulator into shutdown mode. C1 GND Ground pin C2 BIAS Bias voltage supply for internal control circuits. This pin is monitored by internal Under-Voltage Lockout Circuit. Description Regulated Output Voltage pin Input Voltage Supply pin ABSOLUTE MAXIMUM RATINGS Rating Input Voltage (Note 1) Output Voltage Chip Enable, Bias and SNS Input Symbol Value Unit VIN −0.3 to 6 V VOUT −0.3 to (VIN+0.3) ≤ 6 V VEN, VBIAS, VSNS/ADJ −0.3 to 6 V Output Short Circuit Duration tSC unlimited s Maximum Junction Temperature TJ 150 °C TSTG −55 to 150 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection (except OUT pin) and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22−A114 ESD Machine Model tested per EIA/JESD22−A115 Latchup Current Maximum Rating tested per JEDEC standard: JESD78. THERMAL CHARACTERISTICS Rating Thermal Characteristics, WLCSP6 1.4 mm x 0.8 mm Thermal Resistance, Junction−to−Air (Note 3) Symbol Value Unit RqJA 69 °C/W 3. This junction−to−ambient thermal resistance under natural convection was derived by thermal simulations based on the JEDEC JESD51 series standards methodology. Only a single device mounted at the center of a high_K (2s2p) 80 mm x 80 mm multilayer board with 1−ounce internal planes and 2−ounce copper on top and bottom. Top copper layer has a dedicated 1.6 sqmm copper area. www.onsemi.com 3 NCP136 ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 85°C; VBIAS = 2.7 V or (VOUT + 1.6 V), whichever is greater, VIN = VOUT(NOM) + 0.3 V, IOUT = 1 mA, VEN = 1 V, CIN = 4.7 mF, COUT = 10 mF, CBIAS = 1 mF, unless otherwise noted. Typical values are at TJ = +25°C. Min/Max values are for −40°C ≤ TJ ≤ 85°C unless otherwise noted. (Note 4) Parameter Symbol Min Max Unit Operating Input Voltage Range VIN VOUT + VDO 5.5 V Operating Bias Voltage Range VBIAS (VOUT + 1.50) ≥ 2.5 5.5 V Undervoltage Lock−out Test Conditions VBIAS Rising Hysteresis Output Voltage Accuracy Typ UVLO 1.6 0.2 V VOUT ±0.5 % Output Voltage Accuracy −40°C ≤ TJ ≤ 85°C, VOUT(NOM) + 0.1 V ≤ VIN ≤ VOUT(NOM) + 1.0 V, 2.7 V or (VOUT(NOM) + 1.6 V), whichever is greater < VBIAS < 5.5 V, 1 mA < IOUT < 700 mA VOUT VIN Line Regulation VOUT(NOM) + 0.1 V ≤ VIN ≤ 5.0 V LineReg 0.01 %/V VBIAS Line Regulation 2.7 V or (VOUT(NOM) + 1.6 V), whichever is greater < VBIAS < 5.5 V LineReg 0.01 %/V Load Regulation IOUT = 1 mA to 700 mA LoadReg 1.5 mV VIN Dropout Voltage IOUT = 700 mA (Note 5) VDO 40 60 mV VBIAS Dropout Voltage IOUT = 700 mA, VIN = VBIAS (Notes 5, 6) VDO 1.1 1.5 V Output Current Limit VOUT = 90% VOUT(NOM) ICL SNS/ADJ Pin Operating Current mA 0.5 mA IBIASQ 70 110 mA 0.5 1 mA 0.5 1 mA Bias Pin Disable Current VEN ≤ 0.4 V IBIAS(DIS) Input Pin Disable Current VEN ≤ 0.4 V IVIN(DIS) EN Pin Threshold Voltage EN Input Voltage “H” VEN(H) EN Input Voltage “L” VEN(L) Power Supply Rejection Ratio 1450 2000 % 0.1 VBIAS = 2.7 V, IOUT = 0 mA VEN = 5.5 V 800 +1.0 ISNS Bias Pin Quiescent Current EN Pull Down Current −1.0 V 0.9 0.4 IEN 0.3 VIN to VOUT, f = 1 kHz, IOUT = 10 mA, VIN ≥ VOUT +0.5 V, VOUT(NOM) = 1.2 V, VBIAS = 3.0 V PSRR(VIN) 75 dB VBIAS to VOUT, f = 1 kHz, IOUT = 10 mA, VIN ≥ VOUT +0.5 V, VOUT(NOM) = 1.2 V, VBIAS = 3.0 V PSRR(VBIAS) 80 dB Output Noise Voltage VIN = VOUT +0.5 V, f = 10 Hz to 100 kHz, VOUT(NOM) = 1.2 V VN 40 mVRMS Thermal Shutdown Threshold Temperature increasing 160 °C Output Discharge Pull−Down VEN ≤ 0.4 V, VOUT = 0.5 V, NCP136A and NCP136C option Temperature decreasing 1 mA 140 RDISCH 150 W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C. Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible. 5. Dropout voltage is characterized when VOUT falls 3% below VOUT(NOM). 6. For fixed output voltages below 1.5 V, VBIAS dropout does not apply due to a minimum Bias operating voltage of 2.5 V. www.onsemi.com 4 NCP136 ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 85°C; IOUT = 1 mA, VEN = 1 V, CIN = 4.7 μF, COUT = 10 μF, CBIAS = 1 μF. Typical values are at TJ = +25°C. Min/Max values are for −40°C ≤ TJ ≤ 85°C unless otherwise noted. (Note 7) Parameter Test conditions Symbol Min Typ Max Unit NCP136xFCRC040T2G VBIAS = 3 V, VIN = 0.6 V Delay time From assertion of VEN to output voltage increase ‘A’ option tDELAY 73 Rise time VOUT rise from 10% to 90% VOUT(NOM) ‘A’ option tRISE 15 From assertion of VEN to VOUT = 98% VOUT(NOM) ‘A’ option tON 98 Turn−On Time ms NCP136xFCT080T2G & NCP136xFCRC080T2G VBIAS = 3 V, VIN = 1.0 V Delay time From assertion of VEN to output voltage increase ‘A’ and ‘B’ option tDELAY 55 Rise time VOUT rise from 10% to 90% VOUT(NOM) ‘A’ and ‘B’ option tRISE 17 From assertion of VEN to VOUT = 98% VOUT(NOM) ‘A’ and ‘B’ option tON 80 Turn−On Time ms NCP136xFCT088T2G VBIAS = 3 V, VIN = 1.1 V Delay time From assertion of VEN to output voltage increase ‘A’ option tDELAY 71 Rise time VOUT rise from 10% to 90% VOUT(NOM) ‘A’ option tRISE 16 From assertion of VEN to VOUT = 98% VOUT(NOM) ‘A’ option tON 97 Turn−On Time ms NCP136xFCT105T2G VBIAS = 3 V, VIN = 1.25 V Delay time From assertion of VEN to output voltage increase ‘A’ option tDELAY 71 Rise time VOUT rise from 10% to 90% VOUT(NOM) ‘A’ option tRISE 18 From assertion of VEN to VOUT = 98% VOUT(NOM) ‘A’ option tON 102 Turn−On Time ms NCP136xFCT110T2G VBIAS = 3 V, VIN = 1.3 V Delay time From assertion of VEN to output voltage increase ‘A’ option tDELAY 71 Rise time VOUT rise from 10% to 90% VOUT(NOM) ‘A’ option tRISE 19 From assertion of VEN to VOUT = 98% VOUT(NOM) ‘A’ option tON 105 ‘A’ option tON 70 Turn−On Time ms NCP136xFCT120T2G VBIAS = 3 V, VIN = 1.4 V Delay time Rise time From assertion of VEN to output voltage increase ‘C’ option VOUT rise from 10% to 90% VOUT(NOM) ‘A’ option 80 tRISE ‘C’ option Turn−On Time From assertion of VEN to VOUT = 98% VOUT(NOM) ‘A’ option ‘C’ option ms 21 80 tON 108 210 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C. Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible. www.onsemi.com 5 NCP136 TYPICAL CHARACTERISTICS At TJ = +25°C, VIN = VOUT(NOM) + 0.3 V, VBIAS = 2.8 V, VEN = VBIAS, VOUT(NOM) = 1.2 V, IOUT = 700 mA, CIN = 4.7 mF, CBIAS = 1 mF, and COUT = 10 mF (effective capacitance), unless otherwise noted. 500 TJ = 85°C 60 VDO (VIN − VOUT), DROPOUT VOLTAGE (mV) VDO (VIN − VOUT), DROPOUT VOLTAGE (mV) 70 TJ = 25°C TJ = −40°C 50 40 30 20 10 0 0 100 200 300 400 500 600 TJ = 25°C TJ = 85°C 350 300 250 200 150 100 50 0.5 1.5 2.5 3.5 4.5 IOUT, OUTPUT CURRENT (mA) VBIAS − VOUT (V) Figure 4. VIN Dropout Voltage vs. IOUT and TJ Figure 5. VIN Dropout Voltage vs. VBIAS − VOUT and TJ 90 TJ = −40°C 1400 IBIAS, BIAS PIN CURRENT (mA) VDO (VBIAS − VOUT), DROPOUT VOLTAGE (mV) TJ = −40°C 400 0 700 1500 TJ = 25°C TJ = 85°C 1300 1200 1100 1000 900 800 80 70 60 50 40 30 TJ = −40°C TJ = 25°C TJ = 85°C 20 10 0 0 100 200 300 400 500 600 0.1 700 1 10 100 1000 IOUT, OUTPUT CURRENT (mA) Figure 6. VBIAS Dropout Voltage vs. IOUT and TJ Figure 7. BIAS Pin Current vs. IOUT and TJ PSRR, POWER SUPPLY REJECTION RATIO [dB] IOUT, OUTPUT CURRENT (mA) 100 IBIAS, BIAS PIN CURRENT (mA) 450 90 80 70 60 50 40 30 TJ = −40°C 20 TJ = 25°C TJ = 85°C 10 0 2 2.5 3 3.5 4 4.5 5 100 VIN = 1.7 V + 100 mVPP VBIAS = 3 V COUT = 10 mF 90 80 70 60 50 40 30 IOUT = 10 mA 20 IOUT = 700 mA 10 0 VBIAS, BIAS VOLTAGE (V) 10 100 1k 10k 100k 1M f, FREQUENCY [Hz] Figure 8. BIAS Pin Current vs. VBIAS and TJ Figure 9. VIN PSRR vs. Frequency www.onsemi.com 6 10M NCP136 100 SPECTRAL NOISE DENSITY [mV/sqrtHz] PSRR, POWER SUPPLY REJECTION RATIO [dB] TYPICAL CHARACTERISTICS (continued) At TJ = +25°C, VIN = VOUT(NOM) + 0.3 V, VBIAS = 2.8 V, VEN = VBIAS, VOUT(NOM) = 1.2 V, IOUT = 700 mA, CIN = 4.7 mF, CBIAS = 1 mF, and COUT = 10 mF (effective capacitance), unless otherwise noted. VIN = 1.7 V VBIAS = 3 V + 100 mVPP COUT = 10 mF 90 80 70 60 50 40 30 IOUT = 10 mA 20 IOUT = 700 mA 10 0 10 100 1k 10k 100k 1M 10M 10 VIN = 1.7 V VBIAS = 2.8 V COUT = 10 mF 1 0.1 IOUT = 1 mA 0.01 IOUT = 700 mA 0.001 10 100 10k 100k 1M 10M FREQUENCY [Hz] f, FREQUENCY [Hz] Figure 10. VBIAS PSRR vs. Frequency Figure 11. Output Voltage Spectral Noise Density vs. Frequency 20 mV/div 100 mV/div 1k VOUT VOUT 1 mA 400 mA/div 400 mA/div 700 mA IOUT 200 ms/div 700 mA 500 ms/div Figure 13. Load Transient Response, IOUT = 1 mA to 700 mA in 1 ms, COUT = 47 mF 40 mV/div 40 mV/div Figure 12. Load Transient Response, IOUT = 1 mA to 700 mA in 1 ms, COUT = 10 mF VOUT VOUT 350 mA 200 mA/div 200 mA/div 350 mA 1 mA IOUT 1 mA IOUT 100 ms/div 1 mA Figure 14. Load Transient Response, IOUT = 1 mA to 350 mA in 1 ms, COUT = 4.7 mF IOUT 100 ms/div Figure 15. Load Transient Response, IOUT = 1 mA to 350 mA in 1 ms, COUT = 10 mF www.onsemi.com 7 NCP136 VEN 2 V/div 20 mV/div TYPICAL CHARACTERISTICS (continued) At TJ = +25°C, VIN = VOUT(NOM) + 0.3 V, VBIAS = 2.8 V, VEN = VBIAS, VOUT(NOM) = 1.2 V, IOUT = 700 mA, CIN = 4.7 mF, CBIAS = 1 mF, and COUT = 10 mF (effective capacitance), unless otherwise noted. VOUT VOUT 200 mV/div 200 mA/div IOUT 200 mA/div 350 mA IOUT 1 mA 20 ms/div 400 ms/div Figure 16. Load Transient Response, IOUT = 1 mA to 350 mA in 1 ms, COUT = 47 mF Figure 17. Enable Transient Response, COUT = 10 mF, IOUT = 700 mA − A Option (Normal) 2 V/div 2 V/div VIN = 1.4 V VBIAS = 3 V VOUT(NOM) = 1.2 V VEN VEN VOUT 200 mV/div 200 mA/div 200 mV/div IOUT VIN = 1.4 V VBIAS = 3 V VOUT(NOM) = 1.2 V VOUT 20 ms/div 50 ms/div Figure 19. Enable Transient Response, COUT = 10 mF, IOUT = 700 mA − C Option (Slow) Figure 18. Enable Transient Response, COUT = 10 mF, IOUT = 0 mA − A Option (Normal) 1 V/div VOUT 2.8 V 10 mV/div 200 mV/div 200 mA/div 2 V/div 3.8 V VEN VBIAS VOUT 50 ms/div 10 ms/div Figure 20. Enable Transient Response, COUT = 10 mF, IOUT = 0 mA − C Option (Slow) Figure 21. BIAS Line Transient Response, VBIAS = 2.8 V to 3.8 V in 5 ms www.onsemi.com 8 NCP136 TYPICAL CHARACTERISTICS (continued) At TJ = +25°C, VIN = VOUT(NOM) + 0.3 V, VBIAS = 2.8 V, VEN = VBIAS, VOUT(NOM) = 1.2 V, IOUT = 700 mA, CIN = 4.7 mF, CBIAS = 1 mF, and COUT = 10 mF (effective capacitance), unless otherwise noted. 10 mV/div 1 V/div 2.5 V 1.5 V VIN VOUT 10 ms/div Figure 22. IN Line Transient Response, VIN = 1.5 V to 2.5 V in 5 ms www.onsemi.com 9 NCP136 APPLICATIONS INFORMATION VBAT NCP136 EN Switch−mode DC/DC VOUT = 1.5 V EN Processor 1.5 V LX IN OUT BIAS IN 1.2 V SNS LOAD GND FB GND I/O I/O To other circuits Figure 23. Typical Application: Low−Voltage DC/DC Post−Regulator with ON/OFF Functionality Input and Output Capacitors The NCP136 dual−rail very low dropout voltage regulator is using NMOS pass transistor for output voltage regulation from VIN voltage. All the low current internal control circuitry is powered from the VBIAS voltage. The use of an NMOS pass transistor offers several advantages in applications. Unlike PMOS topology devices, the output capacitor has reduced impact on loop stability. Vin to Vout operating voltage difference can be very low compared with standard PMOS regulators in very low Vin applications. The NCP136 offers smooth monotonic start-up. The controlled voltage rising limits the inrush current. The Enable (EN) input is equipped with internal hysteresis. NCP136 Voltage linear regulator Fixed version is available. The NCP136 device is designed to be stable for ceramic output capacitors with Effective capacitance in the range from 4.7 mF to 47 mF. The device is also stable with multiple capacitors in parallel, having the total effective capacitance in the specified range. In applications where no low input supplies impedance available (PCB inductance in VIN and/or VBIAS inputs as example), the recommended CIN = 1 mF and CBIAS = 0.1 mF or greater. Ceramic capacitors are recommended. For the best performance all the capacitors should be connected to the NCP136 respective pins directly in the device PCB copper layer, not through vias having not negligible impedance. When using small ceramic capacitor, their capacitance is not constant but varies with applied DC biasing voltage, temperature and tolerance. The effective capacitance can be much lower than their nominal capacitance value, most importantly in negative temperatures and higher LDO output voltages. That is why the recommended Output capacitor capacitance value is specified as Effective value in the specific application conditions. Dropout Voltage Because of two power supply inputs VIN and VBIAS and one VOUT regulator output, there are two Dropout voltages specified. The first, the VIN Dropout voltage is the voltage difference (VIN – VOUT) when VOUT starts to decrease by percent specified in the Electrical Characteristics table. VBIAS is high enough; specific value is published in the Electrical Characteristics table. The second, VBIAS dropout voltage is the voltage difference (VBIAS – VOUT) when VIN and VBIAS pins are joined together and VOUT starts to decrease. www.onsemi.com 10 NCP136 VBIAS CBIAS 1 mF VOUT BIAS VIN IN EN CIN 4.7 mF OUT NCP136 0.4 V R1 ADJ CFF GND ON COUT 10 mF R2 OFF Figure 24. Typical Application Schematic − Adjustable Output Voltage Adjustment c. R1 = R2 = 51 kW VOUT−ADJ = 0.4 ⋅ (1 + 51 kW/51 kW ) + 100 nA ⋅ 51 kW = 0.8051 V Error − 0.63% It is recommended to keep the total resistance of resistors (R1 + R2) no greater than a few hundred kW. If total resistance is too big the dynamic performance could get worse due to PCB parasitic capacitance. Big resistors value in combination with parasitic capacitance create low−pass filter and virtually slow−down LDO control loop. The required output voltage can be adjusted from 0.4 V to 1.8 V using two external resistors. Typical application schematics is shown in Figure 24. Output voltage is calculated according to equation 1. Generally, any voltage option can used as adjustable, in the equation below VOUT−ADJ is requested voltage and VOUT_NOM is nominal VOUT as reference voltage. When resistor’s value is in kW range last term (IADJ ⋅ R1) can be omitted because its effect on output voltage accuracy is negligible. In other cases it should be consider especially when tight output voltage accuracy is requested. ǒ V OUT*ADJ + V OUT_NOM @ 1 ) Ǔ R1 ) I ADJ @ R 1 R2 Output Voltage Example: (eq. 1) Voltage Calculation Example − VOUT = 0.8 V: a. R1 = R2 = 5.1 kW, no (IFB × R1) VOUT−ADJ = 0.4 ⋅ (1 + 5.1 kW/5.1 kW ) = 0.8 V Error − 0% b. R1 = R2 = 5.1 kW VOUT−ADJ = 0.4 ⋅ (1 + 5.1 kW/5.1 kW ) + 100 nA ⋅ 5.1 kW = 0.80051 V Error − 0.06% VOUT(V) R1 (kW) (Note 1) R2 (kW) (Note 1) CFF (nF) 0.80 5.1 5.1 5.6 1.05 3.9 2.4 5.6 1.10 8.2 4.7 5.6 1. To increase power efficiency, current flows through resistor divider can be reduced by multiply all resistor values by 10. Feed Forward Capacitor CFF Feedforward capacitor is recommended to improve PSRR, load transient and noise performance. Recommended value for NCP136 device is about 5.6 nF. The capacitor can also improve LDO stability. www.onsemi.com 11 NCP136 Enable Operation current source with typ. value of 0.3 mA which assures that the device is turned off when the EN pin is not connected. The enable pin will turn the regulator on or off. The threshold limits are covered in the electrical characteristics table in this data sheet. To get the full functionality of Soft Start, it is recommended to turn on the VIN and VBIAS supply voltages first and activate the Enable pin no sooner than VIN and VBIAS are on their nominal levels. If the enable function is not to be used then the pin should be connected to VIN or VBIAS. If the EN pin voltage is < 0.4 V the device is guaranteed to be disabled. The pass transistor is turned off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active (devices with Output Active Discharge feature only) so that the output voltage VOUT is pulled down to GND through a 150 W resistor. In the disable state the device consumes as low as typ. 0.5 mA from the VIN and 0.5 mA from VBIAS. If the EN pin voltage > 0.9 V the device is guaranteed to be enabled. The NCP136 regulates the output voltage and the active discharge transistor is turned off. The EN pin has internal pull−down Current Limitation The internal Current Limitation circuitry allows the device to supply the full nominal current and surges but protects the device against Current Overload or Short. Thermal Protection Internal thermal shutdown (TSD) circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. When TSD activated , the regulator output turns off. When cooling down under the low temperature threshold, device output is activated again. This TSD feature is provided to prevent failures from accidental overheating. Activation of the thermal protection circuit indicates excessive power dissipation or inadequate heatsinking. For reliable operation, junction temperature should be limited to +105°C maximum. ORDERING INFORMATION Nominal Output Voltage Marking Option NCP136AFCT080T2G 0.80 V 7A Output Active Discharge, Normal Turn−On Slew Rate NCP136BFCT080T2G 0.80 V 7H Non*Active Discharge, Normal Turn−On Slew Rate NCP136AFCT088T2G 0.88 V 7J Output Active Discharge, Normal Turn−On Slew Rate NCP136AFCT105T2G 1.05 V 7K Output Active Discharge, Normal Turn−On Slew Rate NCP136AFCT110T2G 1.10 V 7L Output Active Discharge, Normal Turn−On Slew Rate NCP136AFCT120T2G 1.20 V 7E Output Active Discharge, Normal Turn−On Slew Rate NCP136CFCT120T2G 1.20 V 7C Output Active Discharge, Slow Turn−On Slew Rate NCP136AFCRC040T2G 0.40 V 7M Output Active Discharge, Normal Turn−On Slew Rate Back Side Coating Device NCP136AFCRC080T2G 0.80 V 7A Output Active Discharge, Normal Turn−On Slew Rate Back Side Coating Package Shipping† WLCSP6 Case 567XK (Pb−Free) 5000 / Tape & Reel WLCSP6 Case 567YU (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. To order other package and voltage variants, please contact your ON Semiconductor sales representative. www.onsemi.com 12 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WLCSP6 1.4x0.8x0.33 CASE 567XK ISSUE O DATE 15 JAN 2019 GENERIC MARKING DIAGRAM* XXM XX = Specific Device Code M = Month Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON03100H WLCSP6 1.4x0.8x0.33 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WLCSP6 1.4x0.8x0.37 CASE 567YU ISSUE O DATE 14 NOV 2019 GENERIC MARKING DIAGRAM* XXM XX = Specific Device Code M = Month Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON14943H WLCSP6 1.4x0.8x0.37 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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NCP136AFCT110T2G 价格&库存

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NCP136AFCT110T2G
  •  国内价格 香港价格
  • 5000+2.429995000+0.30262
  • 10000+2.3365210000+0.29098
  • 25000+2.3134025000+0.28810

库存:5000

NCP136AFCT110T2G
  •  国内价格 香港价格
  • 1+7.018261+0.87401
  • 10+6.1687410+0.76821
  • 25+5.7952925+0.72171
  • 100+4.39294100+0.54707
  • 250+3.73829250+0.46554
  • 500+3.55154500+0.44229
  • 1000+2.710341000+0.33753
  • 2500+2.523472500+0.31426

库存:5000