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NCP1529ASNT1G

NCP1529ASNT1G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TSOP5_3X1.5MM

  • 描述:

    1.7MHz、1A、高效率、低纹波、可调输出电压降压型转换器

  • 数据手册
  • 价格&库存
NCP1529ASNT1G 数据手册
Buck Converter - DC-DC, High Efficiency, Adjustable Output Voltage, Low Ripple 1.7 MHz, 1 A NCP1529 The NCP1529 step−down DC−DC converter is a monolithic integrated circuit for portable applications powered from one cell Li−ion or three cell Alkaline/NiCd/NiMH batteries. The device is able to deliver up to 1.0 A on an output voltage range externally adjustable from 0.9 V to 3.9 V or fixed at 1.2 V or 1.35 V. It uses synchronous rectification to increase efficiency and reduce external part count. The device also has a built−in 1.7 MHz (nominal) oscillator which reduces component size by allowing a small inductor and capacitors. Automatic switching PWM/PFM mode offers improved system efficiency. Additional features include integrated soft−start, cycle−by−cycle current limiting and thermal shutdown protection. The NCP1529 is available in a space saving, low profile 2x2x0.5 mm UDFN6 package and TSOP−5 package. www.onsemi.com MARKING DIAGRAM 5 5 1 DXJAYWG G 1 DXJ = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Features • • • • • • • • • • • • • TSOP−5 SN SUFFIX CASE 483 Up to 96% Efficiency Best In Class Ripple, including PFM mode Source up 1.0 A 1.7 MHz Switching Frequency Adjustable from 0.9 V to 3.9 V or Fixed at 1.2 V or 1.35 V Synchronous rectification for higher efficiency 2.7 V to 5.5 V Input Voltage Range Low Quiescent Current 28 mA Shutdown Current Consumption of 0.3 mA Thermal Limit Protection Short Circuit Protection All Pins are Fully ESD Protected These are Pb−Free Devices UDFN6 MU SUFFIX CASE 517AB 1 2 3 6 XXMG 5 G 4 XX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 14 of this data sheet. Typical Applications • • • • • • Cellular Phones, Smart Phones and PDAs Digital Still Cameras MP3 Players and Portable Audio Systems Wireless and DSL Modems USB Powered Devices Portable Equipment VIN VIN SW CIN OFF ON L VOUT VIN R1 Cff R2 Figure 1. Typical Application for Adjustable Version © Semiconductor Components Industries, LLC, 2010 August, 2020− Rev. 6 SW CIN COUT EN FB GND VIN OFF ON L VOUT COUT EN FB GND Figure 2. Typical Application for Fixed Version 1 Publication Order Number: NCP1529/D NCP1529 PIN FUNCTION DESCRIPTION Pin TSOP−5 Pin UDFN6 Pin Name Type 1 6 EN Analog Input 2 2,4,7 (Note 1) GND Analog / Power Ground This pin is the GND reference for the NFET power stage and the analog section of the IC. The pin must be connected to the system ground. 3 5 SW Analog Output Connection from power MOSFETs to the Inductor. 4 3 VIN Analog / Power Input Power supply input for the PFET power stage, analog and digital blocks. The pin must be decoupled to ground by a 4.7 mF ceramic capacitor. 5 1 FB Analog Input Feedback voltage from the output of the power supply. This is the input to the error amplifier. Description Enable for switching regulators. This pin is active HIGH and is turned off by logic LOW on this pin. 1. Exposed pad for UDFN6 package, named Pin 7, must be connected to system ground. PIN CONNECTIONS EN 1 GND 2 SW 3 5 FB 4 VIN FB 1 GND 2 VIN 3 7 6 EN 5 SW 4 GND (Top View) (Top View) Figure 3. Pin Connections − TSOP−5 Figure 4. Pin Connections − UDFN6 PERFORMANCES 100 90 EFFICIENCY (%) 80 70 60 50 40 30 20 10 0 0 500 IOUT (mA) Figure 5. Efficiency vs Output Current VIN = 3.6 V, VOUT = 3.3 V www.onsemi.com 2 1000 NCP1529 FUNCTIONAL BLOCK DIAGRAM Q1 Vbattery Q2 VIN 2.2 mH SW PWM/PFM CONTROL 10 mF 4.7 mF GND Enable EN R1 ILIMIT LOGIC CONTROL & THERMAL SHUTDOWN FB REFERENCE VOLTAGE R2 Figure 6. Simplified Block Diagram www.onsemi.com 3 18 pF NCP1529 MAXIMUM RATINGS Symbol Value Unit Minimum Voltage All Pins Rating Vmin −0.3 V Maximum Voltage All Pins (Note 2) Vmax 7.0 V Maximum Voltage EN Vmax VIN + 0.3 V Thermal Resistance, Junction−to−Air (TSOP−5 Package) Thermal Resistance using TSOP−5 Recommended Board Layout (Note 9) RqJA 300 110 °C/W Thermal Resistance, Junction−to−Air (UDFN6 Package) Thermal Resistance using UDFN6 Recommended Board Layout (Note 9) RqJA 220 40 °C/W Operating Ambient Temperature Range (Notes 7 and 8) TA −40 to 85 °C Storage Temperature Range Tstg −55 to 150 °C Junction Operating Temperature (Notes 7 and 8) Tj −40 to 150 °C Latchup Current Maximum Rating (TA = 85°C) (Note 5) Other Pins Lu $100 mA 2.0 200 kV V 1 per IPC ESD Withstand Voltage (Note 4) Human Body Model Machine Model Vesd Moisture Sensitivity Level (Note 6) MSL Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Maximum electrical ratings are defined as those values beyond which damage to the device may occur at TA = 25°C. 3. According to JEDEC standard JESD22−A108B. 4. This device series contains ESD protection and exceeds the following tests: Human Body Model (HBM) per JEDEC standard: JESD22−A114. Machine Model (MM) per JEDEC standard: JESD22−A115. 5. Latchup current maximum rating per JEDEC standard: JESD78. 6. JEDEC Standard: J−STD−020A. 7. In applications with high power dissipation (low VIN, high IOUT), special care must be paid to thermal dissipation issues. Board design considerations − thermal dissipation vias, traces or planes and PCB material − can significantly improve junction to air thermal resistance RqJA (for more information, see design and layout consideration section). Environmental conditions such as ambient temperature TA brings thermal limitation on maximum power dissipation allowed. The following formula gives calculation of maximum ambient temperature allowed by the application: TA MAX = TJ MAX − (RqJA x Pd) Where: TJ is the junction temperature, Pd is the maximum power dissipated by the device (worst case of the application), and RqJA is the junction−to−ambient thermal resistance. 8. To prevent permanent thermal damages, this device include a thermal shutdown which engages at 180°C (typ). 9. Board recommended TSOP−5 and UDFN6 layouts are described on Layout Considerations section. 1200 IOUTmax, MAXIMUM OUTPUT CURRENT (mA) PD, POWER DISSIPATION (mW) 1200 UDFN6 1000 800 1000 TSOP−5 600 400 200 0 −40 −20 0 20 40 60 800 TSOP−5 600 400 200 0 2.7 80 UDFN6 TA, AMBIENT TEMPERATURE (°C) 3.7 4.2 4.7 VIN, INPUT VOLTAGE (V) Figure 8. Power Derating Figure 7. Maximum Output Current, TA = 455C www.onsemi.com 4 3.2 5.2 NCP1529 ELECTRICAL CHARACTERISTICS (Typical values are referenced to TA = +25°C, Min and Max values are referenced −40°C to +85°C ambient temperature, unless otherwise noted, operating conditions VIN = 3.6 V, VOUT = 1.2 V, unless otherwise noted.) Rating Conditions Symbol Min Typ Max Vin IQ Unit 2.7 − 5.5 V − 28 39 mA INPUT VOLTAGE Input Voltage Range Quiescent Current No Switching, No load Standby Current EN Low Under Voltage Lockout VIN Falling Under Voltage Hysteretis ISTB − 0.3 1.0 mA VUVLO 2.2 2.4 2.55 V VUVLOH − 100 − mV VIH 1.2 − − V ANALOG AND DIGITAL PIN Positive going Input High Voltage Threshold Negative going Input High Voltage Threshold VIL − − 0.4 V VENH − 100 − mV EN = 3.6 V IENH − 1.5 − mA Adjustable Version Fixed Version at 1.2 V Fixed Version at 1.35 V VFB − − − 0.6 1.2 1.35 − − − V VOUT 0.9 0.9 − − 3.3 3.9 V DVOUT − −3 $1 $2 − +3 % IOUTMAX 1 − − A EN Threshold Hysteresis EN High Input Current OUTPUT Feedback Voltage Level Output Voltage Range (Notes 10, 11) Output Voltage Accuracy USB or 5 V Rail Powered Applications (VIN from 4.3 V to 5.5 V) (Note 12) Room Temperature (Note 13) Overtemperature Range Maximum Output Current (Note 10) Output Voltage Load Regulation Overtemperature Load = 100 mA to 1000 mA (PWM Mode) Load = 0 mA to 100 mA (PFM Mode) VLOADR − − −0.9 1.1 − − % Load Transient Response Rise/Fall Time 1 ms 10 mA to 100 mA Load Step (PFM to PWM Mode) 200 mA to 600 mA Load Step (PWM to PWM Mode) VLOADT − 40 − mV − 85 − VLINER − 0.05 − % Output Voltage Line Regulation Load = 100 mA VIN = 2.7 V to 5.5 V Line Transient Response Load = 100 mA 3.6 V to 3.2 V Line Step (Fall Time = 50 ms) VLINET − 6.0 − mVPP Output Voltage Ripple IOUT = 0 mA IOUT = 300 mA VRIPPLE − − 8.0 3.0 − − mVPP FSW 1.2 1.7 2.2 MHz Switching Frequency Duty Cycle D − − 100 % tSTART − 310 500 ms High−Side MOSFET On−Resistance RONHS − 400 − mW Low−Side MOSFET On−Resistance RONLS − 300 − mW High−Side MOSFET Leakage Current ILEAKHS − 0.05 − mA Low−Side MOSFET Leakage Current ILEAKLS − 0.01 − mA IPK − 1.6 − A Thermal Shutdown Threshold TSD − 180 − °C Thermal Shutdown Hysteresis TSDH − 40 − °C Soft−Start Time Time from EN to 90% of Output Voltage POWER SWITCHES PROTECTION DC−DC Short Circuit Protection Peak Inductor Current 10. Functionality guaranteed per design and characterization. 11. Whole output voltage range is available for adjustable versions only. By topology, the maximum output voltage will be equal or lower than the input voltage. 12. See chapter ”USB or 5 V Rail Powered Applications”. 13. For adjustable versions only, the overall output voltage tolerance depends upon the accuracy of the external resistor (R1 and R2). Specified value assumes that external resistor have 0.1% tolerance. www.onsemi.com 5 NCP1529 TABLE OF GRAPHS Typical Characteristics for Step−down Converter Figure Efficiency vs. Output Current Iq ON Quiescent Current, PFM no load vs. Input Voltage 9 Iq OFF Standby Current, EN Low vs. Input Voltage 8 Switching Frequency vs. Ambient Temperature 13 VLOADR Load Regulation vs. Load Current 14 VLOADT Load Transient Response VLINER Line Regulation VLINET Line Transient Response tSTART Soft Start 20 Short Circuit Protection 21 h FSW IPK 10, 11, 12 16, 17 vs. Output Current 15 18, 19 VUVLO Under Voltage Lockout Threshold vs. Ambient Temperature 22 VIL, VIH Enable Threshold vs. Ambient Temperature 23 P, G Phase & Gain Performance 24 www.onsemi.com 6 NCP1529 31 Iq, QUIESCENT CURRENT (mA) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 2.5 3.0 3.5 4.0 4.5 5.5 29 28 27 2.5 4.0 4.5 5.0 5.5 Figure 10. Quiescent Current vs. Input Voltage (Open Loop, Feedback = 1, Temperature = 255C) 90 90 80 −40°C 70 60 25°C 50 85°C 40 30 60 50 10 600 800 1000 3.3 V 30 10 400 VBAT = 2.7 V 40 20 200 5.5 V 70 20 0 0 200 400 600 800 IOUT, OUTPUT CURRENT (mA) IOUT, OUTPUT CURRENT (mA) Figure 11. Efficiency vs. Output Current (VIN = 3.3 V, VOUT = 1.2 V) Figure 12. Efficiency vs. Output Current (Vout = 1.2 V, Temperature = 255C) 1000 2.2 3.3 V 90 80 1.2 V 70 60 VOUT = 0.9 V 50 40 30 20 10 0 200 400 600 800 IOUT, OUTPUT CURRENT (mA) SWITCHING FREQUENCY (MHz) 100 0 3.5 Figure 9. Standby Current vs. Input Voltage (Enable = 0, Temperature = 255C) 100 0 3.0 VIN, INPUT VOLTAGE (V) 100 0 EFFICIENCY (%) 30 VIN, INPUT VOLTAGE (V) 80 EFFICIENCY (%) 5.0 EFFICIENCY (%) Istb, STANDBY CURRENT (mA) 1.0 1000 2.1 2 1.9 VIN = 2.7 V 1.8 1.7 1.6 3.6 V 1.5 1.4 5.5 V 1.3 1.2 −60 Figure 13. Efficiency vs. Output Current (VIN = 3.6 V, Temperature = 255C) −20 20 60 TA, AMBIENT TEMPERATURE (°C) 100 Figure 14. Switching Frequency vs. Ambient Temperature (Vout = 1.2 V, Iout = 200 mA) www.onsemi.com 7 3.0 3.0 2.0 2.0 LINE REGULATION (%) LOAD REGULATION (%) NCP1529 1.0 −40°C 0.0 −1.0 25°C −2.0 −3.0 0 200 400 85°C 600 800 1000 1.0 100 mA 0 −1.0 1 mA IOUT = 800 mA −2.0 −3.0 2.7 3.2 3.7 4.2 4.7 5.2 IOUT, OUTPUT CURRENT (mA) VIN, INPUT VOLTAGE (V) Figure 15. Load Regulation vs. Output Current (VIN = 5.5 V, VOUT = 1.2 V) Figure 16. Line Regulation vs. Input Voltage (VOUT = 1.2 V, Temperature = 255C) Figure 17. 10 mA to 100 mA Load Transient in 1 ms (VIN = 3.6 V, VOUT = 1.2 V, Temperature = 255C) Figure 18. 200 mA to 600 mA Load Transient in 1 ms (VIN = 3.6 V, VOUT = 1.2 V, Temperature = 255C) Figure 19. 3.0 V to 3.6 V Line Transient, Rise = 50 ms (VIN = 1.2 V, IOUT = 100 mA, Temperature = 255C) Figure 20. 3.6 V to 3.0 V Line Transient, Fall = 50 ms (VIN = 1.2 V, IOUT = 100 mA, Temperature = 255C) www.onsemi.com 8 NCP1529 Figure 22. Short−Circuit Protection (VIN = 3.6 V, VOUT = 1.2 V, IOUT = CC, Temperature = 255C) 1.2 2.55 ENABLE THRESHOLD VOLTAGES (V) 2.60 UVLOrise 2.50 2.45 UVLOfall 2.40 2.35 2.30 2.25 −25 0 25 50 75 100 125 1.1 1.0 0.9 VIH 0.8 0.7 VIL 0.6 0.5 0.4 −40 −15 10 35 60 TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 23. Undervoltage Lockout Threshold vs. Ambient Temperature Figure 24. Enable Threshold Voltages vs. Ambient Temperature 70 200 160 50 120 30 Phase 40 10 0 Gain −10 −40 −80 −30 −50 10 80 PHASE (°) 2.20 −50 GAIN (dB) UNDERVOLTAGE LOCKOUT THRESHOLD (V) Figure 21. Typical Soft−Start (VIN = 3.6 V, VOUT = 1.2 V, IOUT = 100 mA, Temperature = 255C) −120 100 1000 10000 100000 −160 1000000 FREQUENCY (Hz) Figure 25. Phase and Gain Performance (VIN = 3.6 V, VOUT = 1.2 V, IOUT = 200 mA, Temperature = 255C) www.onsemi.com 9 85 NCP1529 DC/DC OPERATION DESCRIPTION Detailed Description VOUT The NCP1529 uses a constant frequency, current mode step−down architecture. Both the main (P−channel MOSFET) and synchronous (N−channel MOSFET) switches are internal. The output voltage is set by an external resistor divider in the range of 0.9 V to 3.9 V and can source at least 1A. The NCP1529 works with two modes of operation; PWM/PFM depending on the current required. In PWM mode, the device can supply voltage with a tolerance of $3% and 90% efficiency or better. Lighter load currents cause the device to automatically switch into PFM mode to reduce current consumption and extended battery life. Additional features include soft−start, undervoltage protection, current overload protection and thermal shutdown protection. As shown on Figure 1, only six external components are required. The part uses an internal reference voltage of 0.6 V. It is recommended to keep NCP1529 in shutdown mode until the input voltage is 2.7 V or higher. ISW VSW Figure 26. PWM Switching Waveforms (VIN = 3.6 V, VOUT = 1.2 V, IOUT = 600 mA, Temperature = 255C) PFM Operating Mode Under light load conditions, the NCP1529 enters in low current PFM mode of operation to reduce power consumption. The output regulation is implemented by pulse frequency modulation. If the output voltage drops below the threshold of PFM comparator a new cycle will be initiated by the PFM comparator to turn on the switch Q1. Q1 remains ON during the minimum on time of the structure while Q2 is in its current source mode. The peak inductor current depends upon the drop between input and output voltage. After a short dead time delay where Q1 is switched OFF, Q2 is turned in its ON state. The negative current detector will detect when the inductor current drops below zero and sends a signal to turn Q2 to current source mode to prevent a too large deregulation of the output voltage. When the output voltage falls below the threshold of the PFM comparator, a new cycle starts immediately. PWM Operating Mode In this mode, the output voltage of the device is regulated by modulating the on−time pulse width of the main switch Q1 at a fixed 1.7 MHz frequency. The switching of the PMOS Q1 is controlled by a flip−flop driven by the internal oscillator and a comparator that compares the error signal from an error amplifier with the sum of the sensed current signal and compensation ramp. The driver switches ON and OFF the upper side transistor (Q1) while the lower side transistor is switched OFF then ON. At the beginning of each cycle, the main switch Q1 is turned ON by the rising edge of the internal oscillator clock. The inductor current ramps up until the sum of the current sense signal and compensation ramp becomes higher than the error amplifier’s voltage. Once this has occurred, the PWM comparator resets the flip−flop, Q1 is turned OFF while the synchronous switch Q2 is turned ON. Q2 replaces the external Schottky diode to reduce the conduction loss and improve the efficiency. To avoid overall power loss, a certain amount of dead time is introduced to ensure Q1 is completely turned OFF before Q2 is being turned ON. VOUT VSW ISW Figure 27. PFM Switching Waveforms (VIN = 3.6 V, VOUT = 1.2 V, IOUT = 0 mA, Temperature = 255C) www.onsemi.com 10 NCP1529 Soft−Start temperature exceeds 180°C, the device shuts down. In this mode all power transistors and control circuits are turned off. The device restarts in soft−start after the temperature drops below 140°C. This feature is provided to prevent catastrophic failures from accidental device overheating. The NCP1529 uses soft−start to limit the inrush current when the device is initially powered up or enabled. Soft start is implemented by gradually increasing the reference voltage until it reaches the full reference voltage. During startup, a pulsed current source charges the internal soft−start capacitor to provide gradually increasing reference voltage. When the voltage across the capacitor ramps up to the nominal reference voltage, the pulsed current source will be switched off and the reference voltage will switch to the regular reference voltage. Short Circuit Protection When the output is shorted to ground, the device limits the inductor current. The duty−cycle is minimum and the consumption on the input line is 550 mA (typ). When the short circuit condition is removed, the device returns to the normal mode of operation. Cycle−by−cycle Current Limitation USB or 5 V Rail Powered Applications From the block diagram, an ILIM comparator is used to realize cycle−by−cycle current limit protection. The comparator compares the SW pin voltage with the reference voltage, which is biased by a constant current. If the inductor current reaches the limit, the ILIM comparator detects the SW voltage falling below the reference voltage and releases the signal to turn off the switch Q1. The cycle−by−cycle current limit is set at 1600 mA (nom). For USB or 5 V rail powered applications, NCP1529 is able to supply voltages up to 3.9 V, 600 mA, operating in PWM mode only, with high efficiency (Figure 28), low output voltage ripple and good load regulation results over all current range (Figure 29). 100 95 90 Low Dropout Operation ǒ V out + V OUT(max) ) I OUTǒR DS(on)_R INDUCTORǓ • • • • Ǔ EFFICIENCY (%) The NCP1529 offers a low input to output voltage difference. The NCP1529 can operate at 100% duty cycle. In this mode the PMOS (Q1) remains completely ON. The minimum input voltage to maintain regulation can be calculated as: (eq. 1) VOUT: Output Voltage (V) IOUT: Max Output Current RDS(on): P−Channel Switch RDS(on) RINDUCTOR: Inductor Resistance (DCR) −40°C 85 80 75 70 65 60 55 50 45 40 25°C 85°C 0 200 400 600 800 1000 IOUT, OUTPUT CURRENT (mA) Figure 28. Efficiency vs. Output Current (VIN = 5.0 V, VOUT = 3.9 V) Undervoltage Lockout 3.0 The Input voltage VIN must reach 2.4 V (typ) before the NCP1529 enables the DC/DC converter output to begin the start up sequence (see soft−start section). The UVLO threshold hysteresis is typically 100 mV. LOAD REGULATION (%) 2.5 2.0 Shutdown Mode Forcing this pin to a voltage below 0.4 V will shut down the IC. In shutdown mode, the internal reference, oscillator and most of the control circuitries are turned off. Therefore, the typical current consumption will be 0.3 mA (typical value). Applying a voltage above 1.2 V to EN pin will enable the DC/DC converter for normal operation. The device will go through soft−start to normal operation. 1.5 1.0 0.5 −40°C 0.0 −0.5 −1.0 −1.5 25°C 85°C −2.0 −2.5 −3.0 Thermal Shutdown 0 200 400 600 800 1000 IOUT, OUTPUT CURRENT (mA) Internal Thermal Shutdown circuitry is provided to protect the integrated circuit in the event that the maximum junction Temperature is exceeded. If the junction Figure 29. Load Regulation vs. Output Current (VIN = 5.0 V, VOUT = 3.9 V) www.onsemi.com 11 NCP1529 APPLICATION INFORMATION Output Voltage Selection Input Capacitor Selection In case of adjustable versions, the output voltage is programmed through an external resistor divider connected from VOUT to FB then to GND. For low power consumption and noise immunity, the resistor from FB to GND (R2) should be in the [100k−600k] range. If R2 is 200 k given the VFB is 0.6 V, the current through the divider will be 3.0 mA. The formula below gives the value of VOUT, given the desired R1 and the R1 value: In PWM operating mode, the input current is pulsating with large switching noise. Using an input bypass capacitor can reduce the peak current transients drawn from the input supply source, thereby reducing switching noise significantly. The capacitance needed for the input bypass capacitor depends on the source impedance of the input supply. The maximum RMS current occurs at 50% duty cycle with maximum output current, which is IO, max/2. For NCP1529, a low profile ceramic capacitor of 4.7 mF should be used for most of the cases. For effective bypass results, the input capacitor should be placed as close as possible to the VIN Pin V out + V FB • • • • (1 ) R1ńR2) (eq. 2) VOUT: Output Voltage (V) VFB: Feedback Voltage = 0.6 V R1: Feedback Resistor from VOUT to FB R2: Feedback Resistor from FB to GND Table 1. LIST OF INPUT CAPACITORS Manufacturer Part Number Case Size Value (mF) DC Bias (V) Technology MURATA GRM15 series 0402 4.7 6.3 X5R MURATA GRM18 series 0603 4.7 10 X5R TDK C1608 series 0603 4.7 6.3 X5R TDK C1608 series 0603 4.7 10 X5R Output L−C Filter Design Considerations Inductor Selection The NCP1529 operates at 1.7 MHz frequency and uses current mode architecture. The correct selection of the output filter ensures good stability and fast transient response. Due to the nature of the buck converter, the output L−C filter must be selected to work with internal compensation. For NCP1529, the internal compensation is internally fixed and it is optimized for an output filter of L = 2.2 mH and COUT = 10 mF. The corner frequency is given by: The inductor parameters directly related to device performances are saturation current and DC resistance and inductance value. The inductor ripple current (DIL) decreases with higher inductance: f+ 1 2p ǸL C OUT + 1 2p Ǹ2.2 mH 10 mF DI L + The device operates with inductance value of 2.2 mH. If the corner frequency is moved, it is recommended to check the loop stability depending of the accepted output ripple voltage and the required output current. Take care to check the loop stability. The phase margin is usually higher than 45°. I L(max) + I O(max) ) 10 mF 4.7 mH 4.7 mF Ǔ V OUT V IN DI L 2 • IL(max): Maximum inductor current • IO(max): Maximum Output current (eq. 4) (eq. 5) The inductor’s resistance will factor into the overall efficiency of the converter. For best performances, the DC resistance should be less than 0.3 W for good efficiency. Table 2. L−C FILTER EXAMPLE 2.2 mH f SW 1* The saturation current of the inductor should be rated higher than the maximum load current plus half the ripple current: (eq. 3) Output Capacitor (COUT) L ǒ • DIL: Peak to peak inductor ripple current • L: Inductor value • fSW: Switching frequency + 34 kHz Inductance (L) V OUT www.onsemi.com 12 NCP1529 Table 3. LIST OF INDUCTORS Manufacturer Part Number Case Size (mm) Height Max (mm) L (mH) DCR Typ (W) DCR Max (W) Rated Current (mA) Inductance Drop Rated Current (mA) Temperature Drop Structure COILCRAFT DO1605T-222 5.5 x 4.2 1.8 2.2 NA 0.070 1800 (-10%) 1700 (+40°C) Wire Wound COILCRAFT EPL3015-222 3.0 x 3.0 1.5 2.2 0.082 0.094 1600 (-30%) 2000 (+40°C) Wire Wound COILCRAFT EPL2014-222 2.0 x 2.0 1.4 2.2 0.120 0.132 1300 (-30%) 1810 (+40°C) Wire Wound MURATA LQM2HPN2R2 2.5 x 2.0 1.0 2.2 0.080 0.100 NA 1300 (+40°C) Multilayer MURATA LQH3NPN2R2 3.0 x 3.0 1.2 2.2 0.065 0.085 1150 (-30%) 1460 (+40°C) Wire Wound MURATA LQH44PN2R2 4.0 x 4.0 1.8 2.2 0.049 0.059 2500 (-30%) 1800 (+40°C) Wire Wound TDK MLP2520S2R2L 2.5 x 2.0 1.0 2.2 0.080 0.104 1300 (-30%) NA Multilayer TDK VLS252010T2R2 2.0 x 1.6 1.2 2.2 0.158 0.190 1400 (-30%) 1100 (+40°C) Wire Wound 744 029 002 2.8 x 2.8 1.35 2.2 0.088 0.105 1150 (-35%) 1700 (+40°C) Wire Wound WURTH ELEC Output Capacitor Selection The output ripple voltage in PWM mode is given by: Selecting the proper output capacitor is based on the desired output ripple voltage. Ceramic capacitors with low ESR values will have the lowest output ripple voltage and are strongly recommended. The output capacitor requires either an X7R or X5R dielectric. DV OUT + DI L ǒ 1 4 f SW C OUT ) ESR Ǔ (eq. 6) Table 4. LIST OF OUTPUT CAPACITORS Manufacturer Part Number Case Size Value (mF) DC Bias (V) Technology MURATA GRM15 series 0402 4.7 6.3 X5R MURATA GRM18 series 0603 4.7 10 X5R MURATA GRM18 series 0603 10 6.3 X5R TDK C1608 series 0603 4.7 6.3 X5R TDK C1608 series 0603 4.7 10 X5R TDK C1608 series 0603 10 6.3 X5R Feed−Forward Capacitor Selection (Adjustable Only) Having feed-forward capacitor of 1 nF or higher can increase soft−start time and reduce inrush current. Choose a small ceramic capacitor X7R or X5R or COG dielectric. The feed-forward capacitor sets the feedback loop response and acts on soft-start time. A minimum 18 pF feed-forward capacitor is needed to ensure loop stability. www.onsemi.com 13 NCP1529 LAYOUT CONSIDERATIONS Electrical Layout Considerations capacitor is recommended to meet compensation requirements. A four layer PCB with a ground plane and a power plane will help NCP1529 noise immunity and loop stability. Implementing a high frequency DC−DC converter requires respect of some rules to get a powerful portable application. Good layout is key to prevent switching regulators to generate noise to application and to themselves. Electrical layout guide lines are: • Use short and large traces when large amount of current is flowing. • Keep the same ground reference for input and output capacitors to minimize the loop formed by high current path from the battery to the ground plane. • Isolate feedback pin from the switching pin and the current loop to protect against any external parasitic signal coupling. Add a feed−forward capacitor between VOUT and FB which adds a zero to the loop and participates to the good loop stability. A 18 pF Thermal Layout Considerations High power dissipation in small package leads to thermal consideration such as: • Enlarge VIN trace and added several vias connected to power plane. • Connect GND pin to top plane. • Join top, bottom and each ground plane together using several free vias in order to increase radiator size. For high ambient temperature and high power dissipation requirements, UDFN6 package using exposed pad connected to main radiator is recommended. Refer to Notes 7, 8, and 9. VOUT Trace EN Trace FB Trace VIN Trace SW Trace SW Trace VIN Trace FB Trace VOUT Trace GND Plane GND Plane EN Trace Figure 30. TSOP−5 Recommended Board Layout Figure 31. UDFN6 Recommended Board Layout ORDERING INFORMATION Nominal Output Voltage Marking Package Shipping† NCP1529ASNT1G* Adj DXJ TSOP−5 3000 / Tape & Reel NCP1529MUTBG* Adj TL NCP1529MU12TBG** 1.2 V TC UDFN6 3000 / Tape & Reel NCP1529MU135TBG 1.35 V RC Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Not recommended for new designs. **This device is End of Life. Please contact sales for additional information and assistance with replacement devices. The product described herein (NCP1529), may be covered by the following U.S. patents: TBD. There may be other patents pending. www.onsemi.com 14 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOP−5 CASE 483 ISSUE N 5 1 SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. D 5X NOTE 5 2X DATE 12 AUG 2020 0.20 C A B 0.10 T M 2X 0.20 T 5 B 1 4 2 B S 3 K DETAIL Z G A A TOP VIEW DIM A B C D G H J K M S DETAIL Z J C 0.05 H C SIDE VIEW SEATING PLANE END VIEW GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 0.95 0.037 MILLIMETERS MIN MAX 2.85 3.15 1.35 1.65 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 1.9 0.074 5 5 XXXAYWG G 1 1 Analog 2.4 0.094 XXX = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package 1.0 0.039 XXX MG G Discrete/Logic XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ARB18753C TSOP−5 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN6 2x2, 0.65P CASE 517AB ISSUE C DATE 10 APR 2013 SCALE 4:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25MM FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. TIE BARS MAY BE VISIBLE IN THIS VIEW AND ARE CONNECTED TO THE THERMAL PAD. A B D NOTE 5 PIN ONE REFERENCE 0.10 C 0.10 C ÍÍ ÍÍ ÍÍ E END VIEW TOP VIEW ÉÉÉ ÉÉÉ ÇÇÇ A3 DETAIL B 0.10 C EXPOSED Cu A 6X 0.08 C A1 NOTE 4 C SIDE VIEW DETAIL A D2 1 SEATING PLANE L 3 4 6X L DETAIL A ALTERNATE TERMINAL CONSTRUCTIONS b e BOTTOM VIEW 0.10 M C A B 0.05 M C A1 GENERIC MARKING DIAGRAM* ALTERNATE CONSTRUCTIONS L1 6 A3 DETAIL B L E2 ÉÉ ÉÉ ÇÇ MOLD CMPD MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.127 REF 0.25 0.35 2.00 BSC 1.50 1.70 2.00 BSC 0.80 1.00 0.65 BSC 0.25 0.35 --0.15 DIM A A1 A3 b D D2 E E2 e L L1 XXMG G XX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. RECOMMENDED SOLDERING FOOTPRINT* PACKAGE OUTLINE 1.70 6X 0.47 2.30 0.95 1 0.65 PITCH 6X 0.40 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON22162D UDFN6 2X2, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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NCP1529ASNT1G
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