NCP154MX100180TAG

DATA SHEET www.onsemi.com Voltage Regulator - Dual, Low IQ, Low Dropout, Dual Input 300 mA XDFN8, 1.2x1.6 CASE 711AS NCP154 MARKING DIAGRAM The NCP154 is 300 mA, Dual Output Linear Voltage Regulator that offers two independent input pins and provides a very stable and accurate voltage with ultra low noise and very high Power Supply Rejection Ratio (PSRR) suitable for RF applications. The device doesn’t require any additional noise bypass capacitor to achieve ultra low noise performance. In order to optimize performance for battery operated portable applications, the NCP154 employs the Adaptive Ground Current Feature for low ground current consumption during light-load conditions. XM G X M G = Specific Device Code = Date Code = Pb−Free Package PIN CONNECTIONS Features • Operating Input Voltage Range: 1.9 V to 5.25 V • Two Independent Input Voltage Pins • Two Independent Output Voltage (for detail please refer to Ordering • • • • • • • • Information) Low IQ of typ. 55 mA per Channel High PSRR: 75 dB at 1 kHz Very Low Dropout: 140 mV Typical at 300 mA Thermal Shutdown and Current Limit Protections Stable with a 1 mF Ceramic Output Capacitor Available in XDFN8 1.2 × 1.6 mm Package Active Output Discharge for Fast Output Turn-Off These are Pb-free Devices GND 1 8 EN1 OUT1 2 7 IN1 OUT2 3 6 IN2 GND 4 5 EN2 EP XDFN8 (Top View) ORDERING INFORMATION Typical Applications • Smartphones, Tablets • Wireless Handsets, Wireless LAN, Bluetooth®, ZigBee® Interfaces • Other Battery Powered Applications See detailed ordering, marking and shipping information in the package dimensions section on page 17 of this data sheet. NCP154 VIN1 IN1 VIN2 VOUT1 OUT1 IN2 VOUT2 OUT2 EN1 CIN1 1 mF CIN2 1 mF EN2 GND COUT2 1 mF COUT1 1 mF Figure 1. Typical Application Schematic © Semiconductor Components Industries, LLC, 2015 October, 2022 − Rev. 3 1 Publication Order Number: NCP154/D NCP154 IN1 ENABLE LOGIC EN1 THERMAL SHUTDOWN BANDGAP REFERENCE MOSFET DRIVER WITH CURRENT LIMIT OUT1 ACTIVE DISCHARGE EN1 GND IN2 ENABLE LOGIC EN2 THERMAL SHUTDOWN BANDGAP REFERENCE MOSFET DRIVER WITH CURRENT LIMIT OUT2 ACTIVE DISCHARGE EN2 GND Figure 2. Simplified Schematic Block Diagram Table 1. PIN FUNCTION DESCRIPTION Pin No. Pin Name Description 1 GND Power supply ground. Soldered to the copper plane allows for effective heat dissipation. 2 OUT1 Regulated output voltage of the first channel. A small 1 mF ceramic capacitor is needed from this pin to ground to assure stability. 3 OUT2 Regulated output voltage of the second channel. A small 1 mF ceramic capacitor is needed from this pin to ground to assure stability. 4 GND Power supply ground. Soldered to the copper plane allows for effective heat dissipation. 5 EN2 Driving EN2 over 0.9 V turns-on OUT2. Driving EN below 0.4 V turns-off the OUT2 and activates the active discharge. 6 IN2 Inputs pin for second channel. It is recommended to connect 1 mF ceramic capacitor close to the device pin. 7 IN1 Inputs pin for first channel. It is recommended to connect 1 mF ceramic capacitor close to the device pin. 8 EN1 Driving EN1 over 0.9 V turns-on OUT1. Driving EN below 0.4 V turns-off the OUT1 and activates the active discharge. − EP Exposed pad must be tied to ground. Soldered to the copper plane allows for effective thermal dissipation. www.onsemi.com 2 NCP154 Table 2. ABSOLUTE MAXIMUM RATINGS Rating Symbol Input Voltage (Note 1) Value Unit VIN1, VIN2 −0.3 V to 6 V V Output Voltage VOUT1, VOUT2 −0.3 V to VIN + 0.3 V or 6 V V Enable Inputs VEN1, VEN2 −0.3 V to VIN + 0.3 V or 6 V V tSC Indefinite s TJ(MAX) 150 °C TSTG −55 to 150 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2,000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Output Short Circuit Duration Maximum Junction Temperature Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115) Latchup Current Maximum Rating tested per JEDEC standard: JESD78. Table 3. THERMAL CHARACTERISTICS (Note 3) Symbol Rating Thermal Characteristics, XDFN8 1.2 × 1.6 mm, Thermal Resistance, Junction-to-Air qJA 3. Single component mounted on 1 oz, FR4 PCB with 645 mm2 Cu area. www.onsemi.com 3 Value 160 Unit °C/W NCP154 Table 4. ELECTRICAL CHARACTERISTICS (−40°C ≤ TJ ≤ 85°C; VIN = VOUT(NOM) + 1 V or 2.5 V, whichever is greater; VEN = 0.9 V, IOUT = 1 mA, CIN = COUT = 1 mF. Typical values are at TJ = +25°C. Min/Max values are specified for TJ = −40°C and TJ = 85°C respectively.) (Note 4) Parameter Test Conditions Operating Input Voltage VOUT > 2 V Symbol Min VIN 1.9 5.25 V −2 +2 % −60 +60 mV Max Unit Output Voltage Accuracy −40°C ≤ TJ ≤ 85°C Line Regulation VOUT + 0.5 V ≤ VIN ≤ 5 V RegLINE 0.02 0.1 %/V Load Regulation IOUT = 1 mA to 300 mA RegLOAD 15 40 mV VOUT(nom) = 1.5 V 360 470 mV VOUT(nom) = 1.8 V 335 390 mV VOUT(nom) = 2.7 V 165 275 mV 160 270 mV VOUT(nom) = 3.0 V 150 260 mV VOUT(nom) = 3.3 V 140 250 mV Dropout Voltage (Note 5) Output Current Limit Quiescent Current VOUT Typ VOUT ≤ 2 V IOUT = 300 mA VOUT(nom) = 2.8 V VDO VOUT = 90% VOUT(nom) ICL 400 IOUT = 0 mA, EN1=VIN, EN2=0V or EN2=VIN, EN1=0V IQ 55 100 mA IQ 110 200 mA IDIS 0.1 1 mA IOUT1 = IOUT2 = 0 mA, VEN1 = VEN2 = VIN Shutdown current (Note 6) VEN ≤ 0.4 V, VIN = 5.25 V EN Pin Threshold Voltage High Threshold Low Threshold VEN Voltage increasing VEN Voltage decreasing EN Pin Input Current VEN = VIN = 5.25 V Power Supply Rejection Ratio VIN = VOUT+1 V for VOUT > 2 V, VIN = 2.5 V, for VOUT ≤ 2 V, IOUT = 10 mA Output Noise Voltage f = 10 Hz to 100 kHz Active Discharge Resistance VEN_HI VEN_LO mA 0.9 V 0.4 IEN 0.3 PSRR 75 dB VN 75 mVrms VIN = 4 V, VEN < 0.4 V RDIS 50 W Thermal Shutdown Temperature Temperature increasing from TJ = +25°C TSD 160 °C Thermal Shutdown Hysteresis Temperature falling from TSD TSDH f = 1 kHz − 20 1.0 − mA °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 5. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 1 V. 6. Shutdown Current is the current flowing into the IN pin when the device is in the disable state. www.onsemi.com 4 NCP154 1.85 1.04 1.84 VOUT, OUTPUT VOLTAGE (V) 1.05 1.03 1.02 1.01 IOUT = 1 mA 1.00 IOUT = 300 mA 0.99 0.98 VIN = 2.5 V VOUT = 1.0 V CIN = COUT = 1 mF 0.97 0.96 0.95 −40 −25 −10 5 20 35 50 65 80 95 1.82 1.80 IOUT = 300 mA 1.79 1.78 1.76 1.75 −40 −25 3.35 2.83 2.82 IOUT = 1 mA 2.81 2.80 IOUT = 300 mA 2.79 2.78 VIN = 3.8 V VOUT = 2.8 V CIN = COUT = 1 mF 2.77 2.76 2.75 −40 −25 −10 5 20 35 50 65 80 20 35 50 65 80 95 3.32 IOUT = 1 mA 3.31 IOUT = 300 mA 3.30 3.29 3.28 VIN = 4.3 V VOUT = 3.3 V CIN = COUT = 1 mF 3.27 3.26 3.25 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Output Voltage vs. Temperature – VOUT = 1.0 V Figure 6. Output Voltage vs. Temperature – VOUT = 1.0 V IQ, QUIESCENT CURRENT (mA) 60 TJ = 85°C 420 TJ = 25°C 360 300 TJ = −40°C 240 180 120 30 60 90 120 150 180 210 240 270 300 95 85°C 54 −40°C 48 42 25°C 36 30 24 18 VIN = 4.3 V VOUT = 3.3 V CIN = COUT = 1 mF 12 6 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 IOUT, OUTPUT CURRENT (mA) VIN, INPUT VOLTAGE (V) Figure 7. Ground Current vs. Output Current Figure 8. Quiescent Current vs. Input Voltage www.onsemi.com 5 95 3.33 TJ, JUNCTION TEMPERATURE (°C) VIN = 4.3 V VOUT = 3.3 V CIN = COUT = 1 mF 0 5 Figure 4. Output Voltage vs. Temperature – VOUT = 1.0 V 3.34 480 −10 Figure 3. Output Voltage vs. Temperature – VOUT = 1.0 V 2.85 540 VIN = 2.8 V VOUT = 1.8 V CIN = COUT = 1 mF 1.77 2.84 60 0 IOUT = 1 mA 1.81 TJ, JUNCTION TEMPERATURE (°C) 600 IGND, GROUND CURRENT (mA) 1.83 TJ, JUNCTION TEMPERATURE (°C) VOUT, OUTPUT VOLTAGE (V) VOUT, OUTPUT VOLTAGE (V) VOUT, OUTPUT VOLTAGE (V) TYPICAL CHARACTERISTICS NCP154 TYPICAL CHARACTERISTICS 0.10 LINEREG, LINE REGULATION (%/V) IQ, QUIESCENT CURRENT (mA) 60 58 56 54 52 50 48 46 VIN = 4.3 V VOUT = 3.3 V CIN = COUT = 1 mF 44 42 40 −40 −25 −10 5 20 35 50 65 80 95 0.04 0.02 0 −0.02 −0.04 −0.08 −0.10 −40 −25 5 20 35 50 65 80 Figure 9. Quiescent Current vs. Temperature Figure 10. Line Regulation vs. Temperature – VOUT = 1.0 V 0.06 0.04 0.02 0 −0.02 −0.04 VIN = 4.3 V VOUT = 3.3 V CIN = COUT = 1 mF −0.06 −0.08 −0.10 −40 −25 −10 5 20 35 50 65 80 95 95 30 27 24 21 18 15 12 9 VIN = 2.5 V VOUT = 1.0 V CIN = COUT = 1 mF 6 3 0 −40 −25 −10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 11. Line Regulation vs. Temperature – VOUT = 3.3 V Figure 12. Load Regulation vs. Temperature – VOUT = 1.0 V 200 30 VIN = 4.3 V VOUT = 3.3 V CIN = COUT = 1 mF VDROP, DROPOUT VOLTAGE (mV) 27 −10 TJ, JUNCTION TEMPERATURE (°C) 0.08 24 VIN = 2.5 V VOUT = 1.0 V CIN = COUT = 1 mF −0.06 REGLOAD, LOAD REGULATION (mV) LINEREG, LINE REGULATION (%/V) 0.06 TJ, JUNCTION TEMPERATURE (°C) 0.10 REGLOAD, LOAD REGULATION (mV) 0.08 21 18 15 12 9 6 3 0 −40 −25 −10 5 20 35 50 65 80 150 TJ = 85°C TJ = 25°C 125 100 TJ = −40°C 75 50 25 0 95 VIN = 4.3 V VOUT = 3.3 V CIN = COUT = 1 mF 175 0 25 50 75 100 125 150 175 200 225 250 275 300 TJ, JUNCTION TEMPERATURE (°C) IOUT, OUTPUT CURRENT (mA) Figure 13. Load Regulation vs. Temperature – VOUT = 3.3 V Figure 14. Dropout Voltage vs. Output Current – VOUT = 3.3 V www.onsemi.com 6 NCP154 TYPICAL CHARACTERISTICS 180 160 400 VIN = 4.3 V VOUT = 3.3 V CIN = COUT = 1 mF IOUT = 300 mA VDO, DROPOUT VOLTAGE (mV) VDROP, DROPOUT VOLTAGE (mV) 200 140 120 100 IOUT = 150 mA 80 60 IOUT = 0 mA 40 20 0 −40 −25 −10 5 35 20 50 65 80 150 100 50 1.9 1.5 1.7 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 Figure 15. Dropout Voltage vs. Temperature Figure 16. Dropout Voltage vs. Output Voltage ISC, SHORT CIRCUIT CURRENT (mA) VOUT = 90% VOUT(NOM) CIN = COUT = 1 mF VIN = 3.8 V 500 475 VIN = 5.25 V 450 425 400 375 350 −40 −25 ISC, SHORT CIRCUIT CURRENT (mA) 200 VOUT, OUTPUT VOLTAGE (V) 525 −10 5 20 35 50 65 80 95 600 575 550 VOUT = 0 V CIN = COUT = 1 mF VIN = 3.8 V 525 500 475 VIN = 5.25 V 450 425 400 375 350 −40 −25 −10 5 20 35 50 65 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 17. Current Limit vs. Temperature Figure 18. Short Circuit Current vs. Temperature 530 80 95 80 95 30 520 510 500 490 480 470 460 VOUT = 0 V CIN = COUT = 1 mF 450 440 430 250 TJ, JUNCTION TEMPERATURE (°C) IDIS, DISABLE CURRENT (nA) ICL, CURRENT LIMIT (mA) 550 300 0 95 600 575 350 2.5 2.8 3.1 3.4 3.7 4.0 4.3 4.6 4.9 5.2 5.5 27 24 21 VIN = 4.3 V VOUT = 0 V VEN = 0 V CIN = COUT = 1 mF 18 15 12 9 6 3 0 −40 −25 −10 5 20 35 50 65 VIN, INPUT VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 19. Short Circuit Current vs. Input Voltage Figure 20. Disable Current vs. Temperature www.onsemi.com 7 NCP154 450 400 0.8 OFF → ON 0.7 ON → OFF 0.6 0.5 0.4 0.3 VIN = 4.3 V VOUT = 3.3 V CIN = COUT = 1 mF 0.2 0.1 0 −40 −25 RDIS, DISCHARGE RESISTIVITY (W) IEN, ENABLE CURRENT (nA) 1.0 0.9 −10 5 20 50 35 65 300 250 200 150 VIN = 4.3 V VOUT = 3.3 V CIN = COUT = 1 mF 100 50 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 21. Enable Thresholds vs. Temperature Figure 22. Current to Enable Pin vs. Temperature 100 100 90 90 80 70 60 50 40 30 VIN = 4 V VOUT = 1 V CIN = COUT = 1 mF 20 10 0 −40 −25 −10 5 20 35 50 65 80 95 70 95 1 mA 10 mA 80 100 mA 60 50 40 VIN = 2.5 V + 100 mVPP VOUT = 1.0 V CIN = none COUT = 1 mF, MLCC 30 20 10 0 0.1 1 10 300 mA 150 mA 100 1,000 10,000 TJ, JUNCTION TEMPERATURE (°C) FREQUENCY (kHz) Figure 23. Discharge Resistivity vs. Temperature Figure 24. Power Supply Rejection Ratio, VOUT = 1.0 V 100 100 90 80 1 mA 10 mA 70 60 50 40 30 20 10 0 VOUT = 3.3 V 10 100 mA VOUT = 1.0 V ESR (W) RR, RIPPLE REJECTION (dB) 350 0 −40 −25 95 80 RR, RIPPLE REJECTION (dB) VEN, ENABLE VOLTAGE (V) TYPICAL CHARACTERISTICS 1 VIN = 4.3 V + 100 mVPP VOUT = 3.3 V CIN = none COUT = 1 mF, MLCC 0.1 1 10 VIN = VOUT + 1 V or 2.5 V CIN = COUT = 1 mF, MLCC, size 1206 300 mA 150 mA 100 1,000 0.1 10,000 0 30 60 90 120 150 180 210 240 270 300 FREQUENCY (kHz) IOUT, OUTPUT CURRENT (mA) Figure 25. Power Supply Rejection Ratio, VOUT = 3.3 V Figure 26. Output Capacitor ESR vs. Output Current www.onsemi.com 8 NCP154 OUTPUT VOLTAGE NOISE (mV/sqrtHz) TYPICAL CHARACTERISTICS 10 RMS Output Noise (mV) 1 150 mA 1 mA 0.1 0.01 0.001 10 mA VIN = 2.5 V VOUT = 1.0 V CIN = COUT = 1 mF 0.01 0.1 IOUT 10 Hz – 100 kHz 100 Hz – 100 kHz 1 mA 40.83 40.27 10 mA 36.03 35.38 150 mA 36.54 35.97 300 mA 37.05 36.48 300 mA 1 10 100 1000 FREQUENCY (kHz) OUTPUT VOLTAGE NOISE (mV/sqrtHz) Figure 27. Output Voltage Noise Spectral Density for VOUT = 1.0 V, COUT = 1 mF 10 RMS Output Noise (mV) 1 300 mA 1 mA 10 mA 0.1 0.01 0.001 VIN = 2.8 V VOUT = 1.8 V CIN = COUT = 1 mF 0.01 0.1 IOUT 10 Hz – 100 kHz 100 Hz – 100 kHz 1 mA 77.84 77.28 10 mA 71.71 70.48 150 mA 71.95 70.88 300 mA 72.71 71.67 150 mA 1 10 100 1000 FREQUENCY (kHz) OUTPUT VOLTAGE NOISE (mV/sqrtHz) Figure 28. Output Voltage Noise Spectral Density for VOUT = 1.8 V, COUT = 1 mF 10 RMS Output Noise (mV) 1 150 mA 1 mA 10 mA 0.1 0.01 0.001 VIN = 4.3 V VOUT = 3.3 V CIN = COUT = 1 mF 0.01 0.1 IOUT 10 Hz – 100 kHz 100 Hz – 100 kHz 1 mA 119.7 117.87 10 mA 113.47 111.47 150 mA 113.84 112.05 300 mA 115.95 114.03 300 mA 1 10 100 1000 FREQUENCY (kHz) Figure 29. Output Voltage Noise Spectral Density for VOUT = 3.3 V, COUT = 1 mF www.onsemi.com 9 NCP154 VOUT 500 mV/div VIN = 2.5 V VOUT = 1.0 V IOUT = 10 mA CIN = COUT = 1 mF VEN IIN VIN = 2.5 V VOUT = 1.0 V IOUT = 10 mA CIN = COUT = 4.7 mF VOUT 40 ms/div Figure 30. Enable Turn−on Response – VOUT = 1.0 V, COUT = 1 mF Figure 31. Enable Turn−on Response – VOUT = 1.0 V, COUT = 4.7 mF 500 mV/div 40 ms/div 200 mA/div VEN IIN VOUT 1 V/div VIN = 4.3 V VOUT = 3.3 V IOUT = 10 mA CIN = COUT = 1 mF VEN IIN VIN = 4.3 V VOUT = 3.3 V IOUT = 10 mA CIN = COUT = 4.7 mF VOUT 40 ms/div 40 ms/div Figure 32. Enable Turn−on Response – VOUT = 3.3 V, COUT = 1 mF Figure 33. Enable Turn−on Response – VOUT = 3.3 V, COUT = 4.7 mF VIN 500 mV/div VIN = 3.8 V to 4.8 V IOUT = 10 mA CIN = none COUT = 1 mF tRISE = 1 ms 20 mV/div 1 V/div 20 mV/div 500 mV/div 500 mV/div 100 mA/div IIN 100 mA/div 500 mV/div 50 mA/div VEN 500 mV/div 500 mV/div TYPICAL CHARACTERISTICS VOUT VIN = 4.8 V to 3.8 V IOUT = 10 mA CIN = none COUT = 1 mF VIN tFALL = 1 ms VOUT 8 ms/div 8 ms/div Figure 34. Line Transient Response – Rising Edge, VOUT = 3.3 V, IOUT = 10 mA Figure 35. Line Transient Response – Falling Edge, VOUT = 3.3 V, IOUT = 10 mA www.onsemi.com 10 NCP154 500 mV/div tRISE = 1 ms VIN = 3.8 V to 4.8 V IOUT = 300 mA CIN = none COUT = 1 mF tFALL = 1 ms 20 mV/div VIN VOUT VOUT 4 ms/div 4 ms/div Figure 36. Line Transient Response– Rising Edge, VOUT = 3.3 V, IOUT = 300 mA Figure 37. Line Transient Response– Falling Edge, VOUT = 3.3 V, IOUT = 300 mA tRISE = 1 ms VOUT 500 mV/div VIN VIN = 3.8 V to 4.8 V IOUT = 10 mA CIN = none COUT = 4.7 mF tFALL = 1 ms VOUT 4 ms/div Figure 38. Line Transient Response– Rising Edge, VOUT = 3.3 V, IOUT = 10 mA, COUT = 4.7 mF Figure 39. Line Transient Response– Falling Edge, VOUT = 3.3 V, IOUT = 10 mA, COUT = 4.7 mF IOUT1 50 mV/div 50 mV/div 100 mA/div tRISE = 500 ns IOUT1 VIN = 4.8 V to 3.8 V IOUT = 10 mA CIN = none COUT = 4.7 mF VIN 4 ms/div 50 mV/div 50 mV/div 100 mA/div VIN = 4.8 V to 3.8 V IOUT = 300 mA CIN = none COUT = 1 mF VIN 20 mV/div 20 mV/div 500 mV/div 20 mV/div 500 mV/div TYPICAL CHARACTERISTICS VIN = 2.8 V VOUT1 = 1.0 V, VOUT2 = 1.8 V IOUT2 = 10 mA COUT1 = 1 mF, COUT2 = 1 mF VOUT1 VOUT2 tFALL = 500 ns VIN = 2.8 V VOUT1 = 1.0 V, VOUT2 = 1.8 V IOUT2 = 10 mA COUT1 = 1 mF, COUT2 = 1 mF VOUT1 VOUT2 4 ms/div 100 ms/div Figure 40. Load Transient Response − 1.0 V – Rising Edge, IOUT1 = 100 mA to 300 mA Figure 41. Load Transient Response − 1.0 V – Falling Edge, IOUT1 = 300 mA to 100 mA www.onsemi.com 11 NCP154 TYPICAL CHARACTERISTICS IOUT1 VOUT1 100 mA/div IOUT1 VIN = 2.8 V VOUT1 = 1.0 V, VOUT2 = 1.8 V IOUT2 = 10 mA COUT1 = 1 mF, COUT2 = 1 mF 50 mV/div 50 mV/div 50 mV/div 50 mV/div 100 mA/div tRISE = 500 ns VOUT2 VOUT2 10 ms/div Figure 42. Load Transient Response − 1.0 V – Rising Edge, IOUT1 = 1 mA to 300 mA Figure 43. Load Transient Response − 1.0 V – Falling Edge, IOUT1 = 300 mA to 1 mA IOUT1 VOUT1 100 mA/div VIN = 2.8 V VOUT1 = 1.0 V, VOUT2 = 1.8 V IOUT2 = 10 mA COUT1 = 1 mF, COUT2 = 1 mF 50 mV/div 50 mV/div IOUT1 VOUT2 tFALL = 500 ns VIN = 2.8 V VOUT1 = 1.0 V, VOUT2 = 1.8 V IOUT2 = 10 mA COUT1 = 1 mF, COUT2 = 1 mF VOUT1 VOUT2 4 ms/div 4 ms/div Figure 44. Load Transient Response − 1.0 V – Rising Edge, IOUT1 = 50 mA to 300 mA Figure 45. Load Transient Response − 1.0 V – Falling Edge, IOUT1 = 300 mA to 50 mA IOUT1 IOUT1 100 mA/div tRISE = 500 ns VIN = 4.3 V VOUT1 = 3.3 V, VOUT2 = 2.8 V IOUT2 = 10 mA COUT1 = 1 mF, COUT2 = 1 mF 50 mV/div 50 mV/div 100 mA/div 50 mV/div 50 mV/div 100 mA/div VOUT1 4 ms/div tRISE = 500 ns 50 mV/div 50 mV/div tFALL = 500 ns VIN = 2.8 V VOUT1 = 1.0 V, VOUT2 = 1.8 V IOUT2 = 10 mA COUT1 = 1 mF, COUT2 = 1 mF VOUT1 VOUT2 tFALL = 500 ns VIN = 4.3 V VOUT1 = 3.3 V, VOUT2 = 2.8 V IOUT2 = 10 mA COUT1 = 1 mF, COUT2 = 1 mF VOUT1 VOUT2 4 ms/div 100 ms/div Figure 46. Load Transient Response − 3.3 V – Rising Edge, IOUT1 = 100 mA to 300 mA Figure 47. Load Transient Response – 3.3 V – Falling Edge, IOUT1 = 300 mA to 100 mA www.onsemi.com 12 NCP154 TYPICAL CHARACTERISTICS IOUT1 VOUT1 100 mA/div IOUT1 VIN = 4.3 V VOUT1 = 3.3 V, VOUT2 = 2.8 V IOUT2 = 10 mA COUT1 = 1 mF, COUT2 = 1 mF 50 mV/div 50 mV/div 50 mV/div 50 mV/div 100 mA/div tRISE = 500 ns VOUT2 VOUT2 10 ms/div Figure 48. Load Transient Response − 3.3 V – Rising Edge, IOUT1 = 1 mA to 300 mA Figure 49. Load Transient Response – 3.3 V – Falling Edge, IOUT1 = 300 mA to 1 mA IOUT1 VOUT1 100 mA/div IOUT1 VIN = 4.3 V VOUT1 = 3.3 V, VOUT2 = 2.8 V IOUT2 = 10 mA COUT1 = 1 mF, COUT2 = 1 mF 50 mV/div 50 mV/div 100 mA/div 50 mV/div 50 mV/div VOUT1 4 ms/div tRISE = 500 ns VOUT2 tFALL = 500 ns VIN = 4.3 V VOUT1 = 3.3 V, VOUT2 = 2.8 V IOUT2 = 10 mA COUT1 = 1 mF, COUT2 = 1 mF VOUT1 VOUT2 4 ms/div 4 ms/div Figure 50. Load Transient Response − 3.3 V – Rising Edge, IOUT1 = 50 mA to 300 mA Figure 51. Load Transient Response – 3.3 V – Falling Edge, IOUT1 = 300 mA to 50 mA VEN 500 mV/div 500 mV/div VEN tRISE = 500 ns VOUT COUT = 4.7 mF VIN = 4.3 V VOUT = 3.3 V IOUT = 0 mA COUT = 1 mF, 4.7 mF tRISE = 500 ns VOUT COUT = 4.7 mF 1 V/div 500 mV/div tFALL = 500 ns VIN = 4.3 V VOUT1 = 3.3 V, VOUT2 = 2.8 V IOUT2 = 10 mA COUT1 = 1 mF, COUT2 = 1 mF COUT = 1 mF VIN = 4.3 V VOUT = 3.3 V IOUT = 0 mA COUT = 1 mF, 4.7 mF COUT = 1 mF 200 ms/div 200 ms/div Figure 52. Enable Turn−Off – VOUT = 1.0 V Figure 53. Enable Turn−Off – VOUT = 3.3 V www.onsemi.com 13 NCP154 TYPICAL CHARACTERISTICS 500 mA/div VIN VOUT1 1 V/div 1 V/div VOUT2 VIN = 4.3 V VOUT1 = 3.3 V, VOUT2 = 2.8 V IOUT1 = 10 mA, IOUT2 = 10 mA CIN = COUT1 = COUT2 = 1 mF IOUT VOUT Short circuit current Overheating TSD cycling Thermal Shutdown VIN = 5.25 V VOUT = 3.3 V CIN = COUT = 1 mF Short circuit event 20 ms/div 4 ms/div Figure 54. Turn−on/off − Slow Rising VIN Figure 55. Short Circuit and Thermal Shutdown www.onsemi.com 14 NCP154 General If the EN pin voltage >0.9 V the device is guaranteed to be enabled. The NCP154 regulates the output voltage and the active discharge transistor is turned−off. The both EN pin has internal pull−down current source with typ. value of 300 nA which assures that the device is turned−off when the EN pin is not connected. In the case where the EN function isn’t required the EN should be tied directly to IN. The NCP154 is a dual output high performance 300 mA Low Dropout Linear Regulator. This device delivers very high PSRR (75 dB at 1 kHz) and excellent dynamic performance as load/line transients. In connection with low quiescent current this device is very suitable for various battery powered applications such as tablets, cellular phones, wireless and many others. Each output is fully protected in case of output overload, output short circuit condition and overheating, assuring a very robust design. The NCP154 device is housed in XDFN−8 1.6 mm x 1.2 mm package which is useful for space constrains application. Output Current Limit Output Current is internally limited within the IC to a typical 400 mA. The NCP154 will source this amount of current measured with a voltage drops on the 90% of the nominal VOUT. If the Output Voltage is directly shorted to ground (VOUT = 0 V), the short circuit protection will limit the output current to 520 mA (typ). The current limit and short circuit protection will work properly over whole temperature range and also input voltage range. There is no limitation for the short circuit duration. This protection works separately for each channel. Short circuit on the one channel do not influence second channel which will work according to specification. Input Capacitor Selection (CIN) It is recommended to connect at least a 1 mF Ceramic X5R or X7R capacitor as close as possible to the IN pin of the device. This capacitor will provide a low impedance path for unwanted AC signals or noise modulated onto constant input voltage. There is no requirement for the min. or max. ESR of the input capacitor but it is recommended to use ceramic capacitors for their low ESR and ESL. A good input capacitor will limit the influence of input trace inductance and source resistance during sudden load current changes. Larger input capacitor may be necessary if fast and large load transients are encountered in the application. Thermal Shutdown When the die temperature exceeds the Thermal Shutdown threshold (TSD − 160°C typical), Thermal Shutdown event is detected and the affected channel is turn−off. Second channel still working. The channel which is overheated will remain in this state until the die temperature decreases below the Thermal Shutdown Reset threshold (TSDU − 140°C typical). Once the device temperature falls below the 140°C the appropriate channel is enabled again. The thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. This protection is not intended to be used as a substitute for proper heat sinking. The long duration of the short circuit condition to some output channel could cause turn−off other output when heat sinking is not enough and temperature of the other output reach TSD temperature. Output Decoupling (COUT) The NCP154 requires an output capacitor for each output connected as close as possible to the output pin of the regulator. The recommended capacitor value is 1 mF and X7R or X5R dielectric due to its low capacitance variations over the specified temperature range. The NCP154 is designed to remain stable with minimum effective capacitance of 0.33 mF to account for changes with temperature, DC bias and package size. Especially for small package size capacitors such as 0201 the effective capacitance drops rapidly with the applied DC bias. There is no requirement for the minimum value of Equivalent Series Resistance (ESR) for the COUT but the maximum value of ESR should be less than 3 W. Larger output capacitors and lower ESR could improve the load transient response or high frequency PSRR. It is not recommended to use tantalum capacitors on the output due to their large ESR. The equivalent series resistance of tantalum capacitors is also strongly dependent on the temperature, increasing at low temperature. Power Dissipation As power dissipated in the NCP154 increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. The maximum power dissipation the NCP154 can handle is given by: Enable Operation The NCP154 uses the dedicated EN pin for each output channel. This feature allows driving outputs separately. If the EN pin voltage is VIN. Due to this fact in cases, where the extended reverse current condition can be anticipated the device may require additional external protection. The turn−on time is defined as the time period from EN assertion to the point in which VOUT will reach 98% of its nominal value. This time is dependent on various application conditions such as VOUT(NOM), COUT, TA. Power Supply Rejection Ratio To obtain good transient performance and good regulation characteristics place input and output capacitors close to the device pins and make the PCB traces wide. In order to minimize the solution size, use 0402 capacitors. Larger copper area connected to the pins will also improve the device thermal resistance. The actual power dissipation can be calculated from the equation above (Equation 2). Expose pad should be tied the shortest path to the GND pin. PCB Layout Recommendations The NCP154 features very good Power Supply Rejection ratio. If desired the PSRR at higher frequencies in the range 100 kHz – 10 MHz can be tuned by the selection of COUT capacitor and proper PCB layout. www.onsemi.com 16 NCP154 Table 5. ORDERING INFORMATION Device Voltage Option* (OUT1/OUT2) Marking Package Shipping NCP154MX280280TAG (Note 7) 2.8 V / 2.8 V DA XDFN−8 (Pb-Free) 3000 or 5000 / Tape & Reel (Note 7) NCP154MX180280TAG 1.8 V / 2.8 V DC NCP154MX330180TAG 3.3 V / 1.8 V DD NCP154MX300180TAG 3.0 V / 1.8 V DE NCP154MX330280TAG (Note 7) 3.3 V / 2.8 V DF 3000 or 5000 / Tape & Reel (Note 7) NCP154MX330330TAG 3.3 V / 3.3 V DG 3000 / Tape & Reel NCP154MX330300TAG (Note 7) 3.3 V / 3.0 V DH 3000 or 5000 / Tape & Reel (Note 7) NCP154MX300300TAG 3.0 V / 3.0 V DJ 3000 / Tape & Reel NCP154MX100180TAG 1.0 V / 1.8 V DK NCP154MX150280TAG (Note 7) 1.5 V / 2.8 V DL NCP154MX180290TAG (Note 7) 1.8 V / 2.9 V DM NCP154MX180300TAG 1.8 V / 3.0 V DN 3000 / Tape & Reel NCP154MX280270TAG (Note 7) 2.8 V / 2.7 V DP 3000 or 5000 / Tape & Reel (Note 7) NCP154MX310310TAG 3.1 V / 3.1 V DQ 3000 / Tape & Reel NCP154MX330285TAG (Note 7) 3.3 V / 2.85 V DR 3000 or 5000 / Tape & Reel (Note 7) NCP154MX180270TAG 1.8 V / 2.7 V DT 3000 / Tape & Reel 3000 / Tape & Reel 3000 or 5000 / Tape & Reel (Note 7) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Contact factory for other voltage options. Output voltage range 1.0 V to 3.3 V with step 50 mV. 7. Product processed after October 1, 2022 are shipped with quantity 5000 units / Tape & Reel. Bluetooth is a registered trademark of Bluetooth SIG. ZigBee is a registered trademark of ZigBee Alliance. www.onsemi.com 17 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS XDFN8 1.6x1.2, 0.4P CASE 711AS ISSUE D SCALE 4:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L A B 8X L1 DETAIL A ÍÍÍ ÍÍÍ ÍÍÍ OPTIONAL CONSTRUCTION E PIN ONE IDENTIFIER DIM A A1 b D D2 E E2 e L L1 ÉÉ ÉÉ ÇÇ ÇÇ EXPOSED Cu TOP VIEW 0.10 C DATE 08 DEC 2015 MOLD CMPD DETAIL B OPTIONAL CONSTRUCTION A DETAIL B GENERIC MARKING DIAGRAM* A1 8X MILLIMETERS MIN NOM MAX 0.300 0.375 0.450 0.000 0.025 0.050 0.130 0.180 0.230 1.500 1.600 1.700 1.200 1.300 1.400 1.100 1.200 1.300 0.200 0.300 0.400 0.40 BSC 0.150 0.200 0.250 0.000 0.050 0.100 0.08 C NOTE 3 DETAIL A 8X 8X C SIDE VIEW L XXMG G SEATING PLANE XX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. D2 1 4 E2 L1 8 5 e e/2 8X b 0.10 C A BOTTOM VIEW RECOMMENDED MOUNTING FOOTPRINT* B 0.05 C 1.44 PACKAGE OUTLINE 8X 0.35 1.40 0.44 8X 0.26 1 0.40 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON87768E XDFN8, 1.6X1.2, 0.4P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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