DATA SHEET
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LDO Regulator for RF and
Analog Circuits - Ultra-Low
Noise and High PSRR
WLCSP4
CASE 567JZ
250 mA
The NCP160 is a linear regulator capable of supplying 250 mA
output current. Designed to meet the requirements of RF and analog
circuits, the NCP160 device provides low noise, high PSRR, low
quiescent current, and very good load/line transients. The device is
designed to work with a 1 mF input and a 1 mF output ceramic
capacitor. It is available in two thickness ultra−small 0.35P, 0.64 mm x
0.64 mm Chip Scale Package (CSP) and XDFN−4 0.65P, 1 mm x
1 mm.
A1
X
A1
Operating Input Voltage Range: 1.9 V to 5.5 V
Available in Fixed Voltage Option: 1.8 V to 5.14 V
±2% Accuracy Over Load/Temperature
Ultra Low Quiescent Current Typ. 18 mA
Standby Current: Typ. 0.1 mA
Very Low Dropout: 80 mV at 250 mA
Ultra High PSRR: Typ. 98 dB at 20 mA, f = 1 kHz
Ultra Low Noise: 10 mVRMS
Stable with a 1 mF Small Case Size Ceramic Capacitors
Available in −WLCSP4 0.64 mm x 0.64 mm x 0.4 mm
−WLCSP4 0.64 mm x 0.64 mm x 0.33 mm
−XDFN4 1 mm x 1 mm x 0.4 mm
These Devices are Pb−Free and are RoHS Compliant
XX M
X
1
X or XX = Specific Device Code
M
= Date Code
PIN CONNECTIONS
IN
Features
•
1
XDFN4
CASE 711AJ
MARKING DIAGRAMS
NCP160
•
•
•
•
•
•
•
•
•
•
WLCSP4
CASE 567KA
OUT
A1
A2
B1
B2
EN
GND
(Top View)
(Top View)
Typical Applications
•
•
•
•
ORDERING INFORMATION
Battery−powered Equipment
Wireless LAN Devices
Smartphones, Tablets
Cameras, DVRs, STB and Camcorders
© Semiconductor Components Industries, LLC, 2017
September, 2022 − Rev. 19
See detailed ordering, marking and shipping information on
page 17 of this data sheet.
1
Publication Order Number:
NCP160/D
NCP160
VOUT
VIN
IN
OUT
NCP160
CIN
1 mF
Ceramic
EN
COUT
1 mF
Ceramic
ON
GND
OFF
Figure 1. Typical Application Schematics
IN
EN
ENABLE
THERMAL
LOGIC
SHUTDOWN
BANDGAP
MOSFET
REFERENCE
INTEGRATED
DRIVER WITH
SOFT−START
CURRENT LIMIT
OUT
* ACTIVE DISCHARGE
Version A only
EN
GND
Figure 2. Simplified Schematic Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
CSP4
Pin No.
XDFN4
Pin
Name
A1
4
IN
A2
1
OUT
B1
3
EN
B2
2
GND
Common ground connection
−
EPAD
EPAD
Expose pad can be tied to ground plane for better power dissipation
Description
Input voltage supply pin
Regulated output voltage. The output should be bypassed with small 1 mF ceramic capacitor.
Chip enable: Applying VEN < 0.4 V disables the regulator, Pulling VEN > 1.2 V enables the LDO.
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NCP160
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VIN
−0.3 V to 6
V
Output Voltage
VOUT
−0.3 to VIN + 0.3, max. 6
V
Chip Enable Input
VCE
−0.3 V to 6
V
Output Short Circuit Duration
tSC
unlimited
s
Maximum Junction Temperature
TJ
150
°C
Input Voltage (Note 1)
Storage Temperature
TSTG
−55 to 150
°C
ESD Capability, Human Body Model (Note 2)
ESDHBM
2000
V
ESD Capability, Machine Model (Note 2)
ESDMM
200
V
Value
Unit
Stresses exceeding those listed in the Maximum Ratings table may
damage the device. If any of these limits are exceeded, device
functionality should not be assumed, damage may occur and
reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114
ESD Machine Model tested per EIA/JESD22−A115
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
THERMAL CHARACTERISTICS
Rating
Symbol
Thermal Characteristics, CSP4 (Note 3)
Thermal Resistance, Junction−to−Air
108
RqJA
Thermal Characteristics, XDFN4 (Note 3)
Thermal Resistance, Junction−to−Air
°C/W
198.1
3. Measured according to JEDEC board specification. Detailed description of the board can be found in JESD51−7
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3
NCP160
ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 1 V; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise
noted. VEN = 1.2 V. Typical values are at TJ = +25°C (Note 4).
Parameter
Test Conditions
Symbol
Min
VIN
VIN = VOUT(NOM) + 1 V
0 mA ≤ IOUT ≤ 250 mA
VOUT
Line Regulation
VOUT(NOM) + 1 V ≤ VIN ≤ 5.5 V
LineReg
0.02
%/V
Load Regulation
IOUT = 1 mA to 250 mA
LoadReg
0.001
%/mA
Operating Input Voltage
Output Voltage Accuracy
Dropout Voltage (Note 5)
Max
Unit
1.9
5.5
V
−2
+2
%
VOUT(NOM) = 1.8 V
180
250
VOUT(NOM) = 2.5 V
110
175
VOUT(NOM) = 2.8 V
95
160
VOUT(NOM) = 2.85 V
95
160
VOUT(NOM) = 3.0 V
90
155
85
149
VOUT(NOM) = 3.3 V
80
145
VOUT(NOM) = 3.5 V
75
140
VOUT(NOM) = 4.5 V
65
120
VOUT(NOM) = 5.0 V
75
105
VOUT(NOM) = 5.14 V
60
105
VOUT(NOM) = 3.2 V
IOUT = 250 mA
Typ
VDO
Output Current Limit
VOUT = 90% VOUT(NOM)
ICL
Short Circuit Current
VOUT = 0 V
ISC
250
700
mV
mA
690
Quiescent Current
IOUT = 0 mA
IQ
18
23
mA
Shutdown Current
VEN ≤ 0.4 V, VIN = 4.8 V
IDIS
0.01
1
mA
EN Input Voltage “H”
VENH
EN Input Voltage “L”
VENL
VEN = 4.8 V
IEN
EN Pin Threshold Voltage
EN Pull Down Current
Turn−On Time
Power Supply Rejection Ratio
Output Voltage Noise
Thermal Shutdown Threshold
Active Output Discharge Resistance
Line Transient (Note 6)
0.4
0.2
COUT = 1 mF, From assertion of VEN to
VOUT = 95% VOUT(NOM)
IOUT = 20 mA
0.5
V
mA
120
ms
f = 100 Hz
f = 1 kHz
f = 10 kHz
f = 100 kHz
PSRR
91
98
82
48
dB
IOUT = 1 mA
IOUT = 250 mA
VN
14
10
mVRMS
Temperature rising
TSDH
160
°C
Temperature falling
TSDL
140
°C
VEN < 0.4 V, Version A only
RDIS
280
W
f = 10 Hz to 100 kHz
VIN = (VOUT(NOM) + 1 V) to (VOUT(NOM) +
1.6 V) in 30 ms, IOUT = 1 mA
VIN = (VOUT(NOM) + 1.6 V) to (VOUT(NOM) +
1 V) in 30 ms, IOUT = 1 mA
Load Transient (Note 6)
1.2
IOUT = 1 mA to 200 mA in 10 ms
IOUT = 200 mA to 1mA in 10 ms
−1
TranLINE
mV
+1
TranLOAD
−40
+40
mV
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C.
Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.
5. Dropout voltage is characterized when VOUT falls 100 mV below VOUT(NOM).
6. Guaranteed by design.
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NCP160
TYPICAL CHARACTERISTICS
2.520
1.820
1.815
2.515
VOUT, OUTPUT VOLTAGE (V)
VOUT, OUTPUT VOLTAGE (V)
IOUT = 10 mA
1.805
2.505
IOUT = 250 mA
1.800
2.495
VIN = 2.8 V
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
1.790
1.785
1.780
−40 −20
0
20
40
60
80
100
120
VIN = 3.5 V
VOUT = 2.5 V
CIN = 1 mF
COUT = 1 mF
2.490
2.485
2.480
−40 −20
140
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Output Voltage vs. Temperature −
VOUT = 1.8 V − XDFN Package
Figure 4. Output Voltage vs. Temperature −
VOUT = 2.5 V − XDFN Package
3.33
3.35
3.32
3.34
VOUT, OUTPUT VOLTAGE (V)
VOUT, OUTPUT VOLTAGE (V)
IOUT = 250 mA
2.500
1.795
3.31
IOUT = 10 mA
3.30
3.29
IOUT = 250 mA
3.28
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
3.27
3.26
3.25
−40 −20
0
20
40
60
80
100
120
3.33
IOUT = 10 mA and 250 mA
3.32
3.31
3.30
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
3.29
3.28
3.27
−40 −20
140
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Output Voltage vs. Temperature −
VOUT = 3.3 V − XDFN Package
Figure 6. Output Voltage vs. Temperature −
VOUT = 3.3 V − CSP Package
0.010
REGLINE, LINE REGULATION (%/V)
5.19
VOUT, OUTPUT VOLTAGE (V)
IOUT = 10 mA
2.510
1.810
5.18
5.17
IOUT = 10 mA
5.16
5.15
IOUT = 250 mA
5.14
VIN = 5.5 V
VOUT = 5.14 V
CIN = 1 mF
COUT = 1 mF
5.13
5.12
5.11
−40 −20
0
20
40
60
80
100
120
140
0.009
0.008
0.007
0.006
0.005
0.004
VIN = 2.8 V
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
0.003
0.002
0.001
0
−40 −20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Output Voltage vs. Temperature −
VOUT = 5.14 V − XDFN Package
Figure 8. Line Regulation vs. Temperature −
VOUT = 1.8 V
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NCP160
TYPICAL CHARACTERISTICS
REGLINE, LINE REGULATION (%/V)
0.020
REGLINE, LINE REGULATION (%/V)
0.010
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
0.009
0.008
0.007
0.016
0.014
0.006
0.012
0.005
0.010
0.008
0.004
0.003
0.006
0.002
0.004
0.001
0
−40 −20
0
20
40
60
80
100
120
60
80
100
120 140
Figure 10. Line Regulation vs. Temperature −
VOUT = 5.14 V
0.0014
0.0012
0.0010
0.0008
VIN = 2.8 V
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
0.0006
0.0004
0.0002
0
−40 −20
0
20
40
60
80
100
120
0.0020
0.0018
0.0016
0.0014
0.0012
0.0010
0.0008
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
0.0006
0.0004
0.0002
0
140
−40 −20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Load Regulation vs. Temperature −
VOUT = 1.8 V
Figure 12. Load Regulation vs. Temperature −
VOUT = 3.3 V
0.0020
1.50
VIN = 5.5 V
VOUT = 5.14 V
CIN = 1 mF
COUT = 1 mF
IGND, GROUND CURRENT (mA)
0.0014
40
Figure 9. Line Regulation vs. Temperature −
VOUT = 3.3 V
0.0016
0.0018
20
TJ, JUNCTION TEMPERATURE (°C)
0.0018
0.0016
0
TJ, JUNCTION TEMPERATURE (°C)
REGLOAD, LOAD REGULATION (%/mA)
REGLOAD, LOAD REGULATION (%/mA)
0.002
0
−40 −20
140
0.0020
REGLOAD, LOAD REGULATION (%/mA)
VIN = 5.5 V
VOUT = 5.14 V
CIN = 1 mF
COUT = 1 mF
0.018
0.0012
0.0010
0.0008
0.0006
0.0004
0.0002
0
−40 −20
0
20
40
60
80
100
120
140
1.35
1.20
TJ = 125°C
1.05
TJ = 25°C
0.90
0.75
0.60
TJ = −40°C
0.45
VIN = 2.8 V
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
0.30
0.15
0
0
25
50
75
100 125 150 175 200 225 250
TJ, JUNCTION TEMPERATURE (°C)
IOUT, OUTPUT CURRENT (mA)
Figure 13. Load Regulation vs. Temperature −
VOUT = 5.14 V
Figure 14. Ground Current vs. Load Current −
VOUT = 1.8 V
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NCP160
1.50
1.50
1.35
1.35
IGND, GROUND CURRENT (mA)
IGND, GROUND CURRENT (mA)
TYPICAL CHARACTERISTICS
1.20
TJ = 125°C
1.05
TJ = 25°C
0.90
0.75
0.60
TJ = −40°C
0.45
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
0.30
0.15
0
0
25
50
75
100 125 150 175 200
225 250
0.60
TJ = −40°C
0.45
VIN = 5.5 V
VOUT = 5.14 V
CIN = 1 mF
COUT = 1 mF
0.30
0.15
0
0
25
50
75
100 125 150 175 200 225 250
Figure 16. Ground Current vs. Load Current −
VOUT = 5.14 V
150
VDROP, DROPOUT VOLTAGE (mV)
VDROP, DROPOUT VOLTAGE (mV)
0.75
Figure 15. Ground Current vs. Load Current −
VOUT = 3.3 V
200
TJ = 125°C
175
TJ = 25°C
150
125
100
TJ = −40°C
75
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
50
0
25
50
75
100 125 150 175 200
225 250
135
120
105
90
TJ = 125°C
75
60
TJ = 25°C
45
TJ = −40°C
30
15
0
0
25
50
75
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
100 125 150 175 200 225 250
IOUT, OUTPUT CURRENT (mA)
IOUT, OUTPUT CURRENT (mA)
Figure 17. Dropout Voltage vs. Load Current −
VOUT = 1.8 V
Figure 18. Dropout Voltage vs. Load Current −
VOUT = 3.3 V
250
VDROP, DROPOUT VOLTAGE (mV)
150
VDROP, DROPOUT VOLTAGE (mV)
TJ = 25°C
0.90
IOUT, OUTPUT CURRENT (mA)
225
135
120
105
90
75
TJ = 125°C
60
TJ = 25°C
45
TJ = −40°C
30
15
0
1.05
IOUT, OUTPUT CURRENT (mA)
250
25
0
TJ = 125°C
1.20
0
25
50
VOUT = 5.14 V
CIN = 1 mF
COUT = 1 mF
75
100 125 150 175 200
225 250
225
200
175
IOUT = 250 mA
150
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
125
100
75
IOUT = 0 mA
50
25
0
−40 −20
0
20
40
60
80
100
120 140
IOUT, OUTPUT CURRENT (mA)
TJ, JUNCTION TEMPERATURE (°C)
Figure 19. Dropout Voltage vs. Load Current −
VOUT = 5.14 V
Figure 20. Dropout Voltage vs. Temperature−
VOUT = 1.8 V
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NCP160
TYPICAL CHARACTERISTICS
VDROP, DROPOUT VOLTAGE (mV)
150
180
160
XDFN
140
120
CSP4
Package
100
80
60
40
20
0
0
25
50
75
100 125 150 175 200
135
120
105
90
60
CSP4
Package
45
30
15
0
225 250
XDFN
75
0
25
50
75
100 125 150 175 200
225 250
IOUT, OUTPUT CURRENT (mA)
IOUT, OUTPUT CURRENT (mA)
Figure 21. Comparison Dropout for XDFN and
CSP – 1.8 V
Figure 22. Comparison Dropout for XDFN and
CSP – 3.3 V
100
VDROP, DROPOUT VOLTAGE (mV)
VDROP, DROPOUT VOLTAGE (mV)
200
80
XDFN
60
CSP4
Package
40
20
0
0
25
50
75
100 125 150 175 200
225 250
IOUT, OUTPUT CURRENT (mA)
Figure 23. Comparison Dropout for XDFN and
CSP – 5.14 V
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NCP160
TYPICAL CHARACTERISTICS
100
VDROP, DROPOUT VOLTAGE (mV)
VDROP, DROPOUT VOLTAGE (mV)
150
135
120
IOUT = 250 mA
105
90
75
60
IOUT = 0 mA
45
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
30
15
0
−40 −20
0
20
40
60
80
100
120
140
70
60
IOUT = 0 mA
50
40
30
VOUT = 5.14 V
CIN = 1 mF
COUT = 1 mF
20
10
0
−40 −20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 24. Dropout Voltage vs. Temperature−
VOUT = 3.3 V
Figure 25. Dropout Voltage vs. Temperature−
VOUT = 5.14 V
ICL, SHORT CIRCUIT CURRENT (mA)
740
730
720
710
700
690
680
VIN = 4.3 V
VOUT = 90% VOUT(nom)
CIN = 1 mF
COUT = 1 mF
670
660
650
−40 −20
0
20
40
60
80
100
120
140
700
690
680
670
660
650
640
VIN = 4.3 V
VOUT = 0 V (Short)
CIN = 1 mF
COUT = 1 mF
630
620
610
600
−40 −20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 26. Current Limit vs. Temperature
Figure 27. Short Circuit Current vs.
Temperature
1.0
0.50
0.9
IEN, ENABLE PIN CURRENT (mA)
ICL, CURRENT LIMIT (mA)
IOUT = 250 mA
80
TJ, JUNCTION TEMPERATURE (°C)
750
VEN, ENABLE VOLTAGE THRESHOLD (V)
90
0.8
OFF −> ON
0.7
0.6
ON −> OFF
0.5
0.4
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
0.3
0.2
0.1
0
−40 −20
0
20
40
60
80
100
120
140
0.45
0.40
0.35
0.30
0.25
0.20
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
0.15
0.10
0.05
0
−40 −20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 28. Enable Threshold Voltage vs.
Temperature
Figure 29. Enable Current Temperature
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NCP160
TYPICAL CHARACTERISTICS
90
80
70
300
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
RDIS, DISCHARGE RESISTIVITY
IDIS, DISABLE CURRENT (nA)
100
60
50
40
30
20
10
0
−40 −20
0
20
40
60
80
100
120 140
290
280
270
260
250
240
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
230
220
210
200
−40 −20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 30. Disable Current vs. Temperature
Figure 31. Discharge Resistivity vs.
Temperature
OUTPUT VOLTAGE NOISE (nV/√Hz)
10,000
IOUT = 250 mA
1000
IOUT = 10 mA
RMS Output Noise (mV)
IOUT = 1 mA
100
10
1
VIN = 2.8 V
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
0.01
0.1
1
10
100
IOUT
10 Hz − 100 kHz
100 Hz − 100 kHz
1 mA
14.62
14.10
10 mA
11.12
10.48
250 mA
10.37
9.82
1000
FREQUENCY (kHz)
Figure 32. Output Voltage Noise Spectral Density − VOUT = 1.8 V
OUTPUT VOLTAGE NOISE (nV/√Hz)
10,000
IOUT = 250 mA
1000
IOUT = 10 mA
RMS Output Noise (mV)
IOUT = 1 mA
100
10
1
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
0.01
0.1
1
10
100
IOUT
10 Hz − 100 kHz
100 Hz − 100 kHz
1 mA
16.9
15.79
10 mA
12.64
11.13
250 mA
11.96
10.64
1000
FREQUENCY (kHz)
Figure 33. Output Voltage Noise Spectral Density − VOUT = 3.3 V
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NCP160
TYPICAL CHARACTERISTICS
120
120
80
60
90
IOUT = 250 mA
0.01
0.1
1
10
100
1k
60
IOUT = 20 mA
40
IOUT = 100 mA
20
IOUT = 250 mA
0.01
0.1
1
10
100
1k
FREQUENCY (kHz)
FREQUENCY (kHz)
Figure 34. Power Supply Rejection Ratio,
VOUT = 1.8 V
Figure 35. Power Supply Rejection Ratio,
VOUT = 3.3 V
10k
100
IOUT = 10 mA
VIN = 5.5 V
VOUT = 5.14 V
COUT = 1 mF
80
Unstable Operation
70
10
50
ESR (W)
60
IOUT = 20 mA
40
30
1
IOUT = 100 mA
Stable Operation
20
IOUT = 250 mA
0.01
0.1
1
10
100
1k
0.1
10k
0
50
100
150
200
FREQUENCY (kHz)
IOUT, OUTPUT CURRENT (mA)
Figure 36. Power Supply Rejection Ratio,
VOUT = 5.14 V
Figure 37. Stability vs. ESR
VEN
IINPUT
VOUT
500 mV/div
10
0
VIN = 3.6 V
VOUT = 3.3 V
COUT = 1 mF
80
0
10k
IOUT = 10 mA
100
VIN = 2.8 V, VOUT = 1.8 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
250
VEN
IINPUT
VOUT
VIN = 2.8 V, VOUT = 1.8 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
100 ms/div
100 ms/div
Figure 38. Enable Turn−on Response −
COUT = 1 mF, IOUT = 10 mA
Figure 39. Enable Turn−on Response −
COUT = 1 mF, IOUT = 250 mA
www.onsemi.com
11
300
200 mA/div
20
IOUT = 100 mA
1 V/div
RR, RIPPLE REJECTION (dB)
IOUT = 20 mA
40
100
500 mV/div
RR, RIPPLE REJECTION (dB)
100
0
1 V/div
VIN = 2.5 V
VOUT = 1.8 V
COUT = 1 mF
200 mA/div
RR, RIPPLE REJECTION (dB)
IOUT = 10 mA
NCP160
TYPICAL CHARACTERISTICS
500 mV/div
10 mV/div
2.3 V
VIN
VOUT
VOUT = 1.8 V, IOUT = 10 mA
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
3.8 V
VIN
VOUT
VOUT = 3.3 V, IOUT = 10 mA
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
20 ms/div
20 ms/div
Figure 40. Line Transient Response −
VOUT = 1.8 V
Figure 41. Line Transient Response −
VOUT = 3.3 V
5.5 V
VIN
VIN
5.3 V
VOUT
1 V/div
VOUT
VOUT = 5.14 V, IOUT = 10 mA
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
VOUT = 2.8 V, CIN = 1 mF (MLCC),
IOUT = 10 mA, COUT = 1 mF (MLCC)
4 ms/div
Figure 43. Turn−on/off − Slow Rising VIN
IOUT
100 mA/div
20 ms/div
Figure 42. Line Transient Response −
VOUT = 5.14 V
tRISE = 1 ms
50 mV/div
50 mV/div
100 mA/div
10 mV/div
200 mV/div
10 mV/div
500 mV/div
4.8 V
3.3 V
VOUT
VIN = 2.8 V, VOUT = 1.8 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
IOUT
tFALL = 1 ms
VOUT
VIN = 2.8 V, VOUT = 1.8 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
4 ms/div
20 ms/div
Figure 44. Load Transient Response −
1 mA to 250 mA − VOUT = 1.8 V
Figure 45. Load Transient Response −
250 mA to 1 mA − VOUT = 1.8 V
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12
NCP160
TYPICAL CHARACTERISTICS
100 mA/div
IOUT
tRISE = 1 ms
50 mV/div
50 mV/div
100 mA/div
IOUT
VOUT
VIN = 4.3 V, VOUT = 3.3 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
tFALL = 1 ms
VOUT
VIN = 4.3 V, VOUT = 3.3 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
4 ms/div
20 ms/div
Figure 46. Load Transient Response −
1 mA to 250 mA − VOUT = 3.3 V
Figure 47. Load Transient Response −
250 mA to 1 mA − VOUT = 3.3 V
tRISE = 1 ms
VIN = 5.5 V, VOUT = 5.14 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
tFALL = 1 ms
VOUT
VIN = 5.5 V, VOUT = 5.14 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
4 ms/div
20 ms/div
Figure 48. Load Transient Response −
1 mA to 250 mA − VOUT = 5.14 V
Figure 49. Load Transient Response −
250 mA to 1 mA − VOUT = 5.14 V
TSD Cycling
500 mV/div
500 mA/div
50 mV/div
VOUT
Short Circuit Event
Overheating
1 V/div
100 mA/div
IOUT
VEN
IOUT
VOUT
Thermal Shutdown
VOUT
VIN = 5.5 V, VOUT = 3.3 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
COUT = 4.7 mF
1 V/div
50 mV/div
100 mA/div
IOUT
VIN = 3.8 V
VOUT = 2.8 V
CIN = 1 mF (MLCC)
COUT = 1 mF
10 ms/div
400 ms/div
Figure 50. Short Circuit and Thermal
Shutdown
Figure 51. Enable Turn−off
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13
NCP160
APPLICATIONS INFORMATION
General
transient response or high frequency PSRR. It is not
recommended to use tantalum capacitors on the output due
to their large ESR. The equivalent series resistance of
tantalum capacitors is also strongly dependent on the
temperature, increasing at low temperature.
The NCP160 is an ultra−low noise 250 mA low dropout
regulator designed to meet the requirements of RF
applications and high performance analog circuits. The
NCP160 device provides very high PSRR and excellent
dynamic response. In connection with low quiescent current
this device is well suitable for battery powered application
such as cell phones, tablets and other. The NCP160 is fully
protected in case of current overload, output short circuit and
overheating.
Enable Operation
Input capacitor connected as close as possible is necessary
for ensure device stability. The X7R or X5R capacitor
should be used for reliable performance over temperature
range. The value of the input capacitor should be 1 mF or
greater to ensure the best dynamic performance. This
capacitor will provide a low impedance path for unwanted
AC signals or noise modulated onto constant input voltage.
There is no requirement for the ESR of the input capacitor
but it is recommended to use ceramic capacitors for their low
ESR and ESL. A good input capacitor will limit the
influence of input trace inductance and source resistance
during sudden load current changes.
The NCP160 uses the EN pin to enable/disable its device
and to deactivate/activate the active discharge function.
If the EN pin voltage is 1.2 V the device is guaranteed to
be enabled. The NCP160 regulates the output voltage and
the active discharge transistor is turned−off.
The EN pin has internal pull−down current source with
typ. value of 200 nA which assures that the device is
turned−off when the EN pin is not connected. In the case
where the EN function isn’t required the EN should be tied
directly to IN.
Output Decoupling (COUT)
Output Current Limit
Input Capacitor Selection (CIN)
The NCP160 requires an output capacitor connected as
close as possible to the output pin of the regulator. The
recommended capacitor value is 1 mF and X7R or X5R
dielectric due to its low capacitance variations over the
specified temperature range. The NCP160 is designed to
remain stable with minimum effective capacitance of 0.7 mF
to account for changes with temperature, DC bias and
package size. Especially for small package size capacitors
such as 0201 the effective capacitance drops rapidly with the
applied DC bias. Please refer Figure 52.
Output Current is internally limited within the IC to a
typical 700 mA. The NCP60 will source this amount of
current measured with a voltage drops on the 90% of the
nominal VOUT. If the Output Voltage is directly shorted to
ground (VOUT = 0 V), the short circuit protection will limit
the output current to 690 mA (typ). The current limit and
short circuit protection will work properly over whole
temperature range and also input voltage range. There is no
limitation for the short circuit duration.
Thermal Shutdown
When the die temperature exceeds the Thermal Shutdown
threshold (TSD * 160°C typical), Thermal Shutdown event
is detected and the device is disabled. The IC will remain in
this state until the die temperature decreases below the
Thermal Shutdown Reset threshold (TSDU − 140°C typical).
Once the IC temperature falls below the 140°C the LDO is
enabled again. The thermal shutdown feature provides the
protection from a catastrophic device failure due to
accidental overheating. This protection is not intended to be
used as a substitute for proper heat sinking.
Power Dissipation
As power dissipated in the NCP160 increases, it might
become necessary to provide some thermal relief. The
maximum power dissipation supported by the device is
dependent upon board design and layout. Mounting pad
configuration on the PCB, the board material, and the
ambient temperature affect the rate of junction temperature
rise for the part.
Figure 52. Capacity vs DC Bias Voltage
There is no requirement for the minimum value of
Equivalent Series Resistance (ESR) for the COUT but the
maximum value of ESR should be less than 2 W. Larger
output capacitors and lower ESR could improve the load
www.onsemi.com
14
NCP160
The maximum power dissipation the NCP160 can handle
is given by:
ƪ125oC * T Aƫ
P D [ V IN @ I GND ) I OUTǒV IN * V OUTǓ
(eq. 1)
q JA
140
PD(MAX), TA = 25°C, 2 oz Cu
130
PD(MAX), TA = 25°C, 1 oz Cu
1.2
1.0
0.8
120
qJA, 1 oz Cu
110
0.6
0.4
100
qJA, 2 oz Cu
0.2
90
80
0
100
200
300
400
500
600
PD(MAX), MAXIMUM POWER DISSIPATION (W)
qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (°C/W)
P D(MAX) +
The power dissipated by the NCP160 for given
application conditions can be calculated from the following
equations:
0
700
PCB COPPER AREA (mm2)
1.0
220
qJA, 2 oz Cu
210
0.9
200
0.8
qJA, 1 oz Cu
190
PD(MAX), TA = 25°C, 2 oz Cu
PD(MAX), TA = 25°C, 1 oz Cu
180
0.7
0.6
170
0.5
160
0.4
150
0
100
200
300
400
PCB COPPER AREA (mm2)
500
600
Figure 54. qJA and PD (MAX) vs. Copper Area (XDFN4)
www.onsemi.com
15
0.3
700
PD(MAX), MAXIMUM POWER DISSIPATION (W)
qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (°C/W)
Figure 53. qJA and PD (MAX) vs. Copper Area (CSP4)
(eq. 2)
NCP160
Reverse Current
Turn−On Time
The PMOS pass transistor has an inherent body diode
which will be forward biased in the case that VOUT > VIN.
Due to this fact in cases, where the extended reverse current
condition can be anticipated the device may require
additional external protection.
The turn−on time is defined as the time period from EN
assertion to the point in which VOUT will reach 98% of its
nominal value. This time is dependent on various
application conditions such as VOUT(NOM), COUT, TA.
Power Supply Rejection Ratio
To obtain good transient performance and good regulation
characteristics place CIN and COUT capacitors close to the
device pins and make the PCB traces wide. In order to
minimize the solution size, use 0402 or 0201 capacitors with
appropriate capacity. Larger copper area connected to the
pins will also improve the device thermal resistance. The
actual power dissipation can be calculated from the equation
above (Equation 2). Expose pad can be tied to the GND pin
for improvement power dissipation and lower device
temperature.
PCB Layout Recommendations
The NCP160 features very high Power Supply Rejection
ratio. If desired the PSRR at higher frequencies in the range
100 kHz – 10 MHz can be tuned by the selection of COUT
capacitor and proper PCB layout.
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16
NCP160
ORDERING INFORMATION
Nominal
Output
Voltage
Description
NCP160AFCS180T2G
1.8 V
250 mA, Active Discharge
NCP160AFCS250T2G
2.5 V
NCP160AFCS270T2G
NCP160AFCS280T2G
NCP160AFCSC280T2G
2.8 V
NCP160AFCS285T2G
2.85 V
NCP160AFCS2925T2G
2.925 V
NCP160AFCS300T2G
Device
Marking
Rotation
Package
Shipping†
WLCSP4
CASE 567KA
(Pb-Free)
5000 / Tape
& Reel
A
0°
D
0°
2.7 V
4
0°
2.8 V
E
0°
250 mA, Active Discharge,
Backside Coating
E
0°
250 mA, Active Discharge
F
0°
T
0°
3.0 V
J
0°
NCP160AFCS320T2G
3.2 V
V
0°
NCP160AFCS330T2G
3.3 V
K
0°
NCP160AFCS350T2G
3.5 V
L
0°
NCP160AFCS370T2G
3.7 V
Y
0°
NCP160AFCS450T2G
4.5 V
P
0°
NCP160AFCS500T2G
5.0 V
R
0°
NCP160AFCS514T2G
5.14 V
Q
0°
NCP160BFCS180T2G
1.8 V
A
90°
NCP160BFCS250T2G
2.5 V
D
90°
NCP160BFCS280T2G
2.8 V
E
90°
NCP160BFCS285T2G
2.85 V
F
90°
NCP160BFCS2925T2G
2.925 V
T
90°
NCP160BFCS300T2G
3.0 V
J
90°
NCP160BFCS330T2G
3.3 V
K
90°
NCP160BFCS350T2G
3.5 V
L
90°
NCP160BFCS450T2G
4.5 V
P
90°
NCP160BFCS500T2G
5.0 V
R
90°
NCP160BFCS514T2G
5.14 V
Q
90°
250 mA, Non-Active
Discharge
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17
NCP160
ORDERING INFORMATION (continued)
Device
Nominal
Output
Voltage
Description
Marking
Rotation
NCP160AFCT180T2G
1.8 V
A
0°
NCP160AFCT250T2G
2.5 V
D
0°
NCP160AFCT270T2G
2.7 V
T
0°
NCP160AFCT280T2G
2.8 V
E
0°
NCP160AFCT285T2G
2.85 V
F
0°
NCP160AFCT300T2G
3.0 V
J
0°
NCP160AFCT330T2G
3.3 V
K
0°
NCP160AFCTC330T2G
3.3 V
K
0°
NCP160AFCT350T2G
3.5 V
L
0°
NCP160AFCT450T2G
4.5 V
P
0°
NCP160AFCT500T2G
5.0 V
NCP160AFCT514T2G
5.14 V
NCP160AFCTC180T2G
1.8 V
NCP160BFCT180T2G
NCP160BFCT210T2G
250 mA, Active Discharge
250 mA, Active Discharge,
Backside Coating
250 mA, Active Discharge
R
0°
Q
0°
A
0°
1.8 V
A
90°
2.1 V
T
90°
NCP160BFCT250T2G
2.5 V
D
90°
NCP160BFCT280T2G
2.8 V
E
90°
NCP160BFCT285T2G
2.85 V
F
90°
NCP160BFCT300T2G
3.0 V
J
90°
NCP160BFCT330T2G
3.3 V
K
90°
NCP160BFCT350T2G
3.5 V
L
90°
NCP160BFCT450T2G
4.5 V
P
90°
NCP160BFCT500T2G
5.0 V
R
90°
NCP160BFCT514T2G
5.14 V
Q
90°
250 mA, Active Discharge,
Backside Coating
250 mA, Non-Active
Discharge
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18
Package
Shipping†
WLCSP4
CASE 567JZ
(Pb-Free)
5000 / Tape
& Reel
NCP160
ORDERING INFORMATION (continued)
Device
Nominal Output
Voltage
NCP160AMX180TBG (Note 7)
1.8 V
NCP160AMX1825TBG (Note 7)
1.825 V
NCP160AMX250TBG
Description
Marking
Package
Shipping†
250 mA,
Active Discharge
DF
XDFN4
(Pb-Free)
3000 or 5000 /
Tape & Reel
(Note 7)
D7
2.5 V
DG
NCP160AMX270TBG
2.7 V
D6
NCP160AMX275TBG
2.75 V
D2
NCP160AMX280TBG (Note 7)
2.8 V
DH
NCP160AMX285TBG
2.85 V
DJ
NCP160AMX290TBG (Note 7)
2.9 V
D4
NCP160AMX300TBG (Note 7)
3.0 V
DK
NCP160AMX320TBG (Note 7)
3.2 V
DY
NCP160AMX310TBG
3.1 V
D3
NCP160AMX330TBG (Note 7)
3.3 V
DA
NCP160AMX350TBG (Note 7)
3.5 V
DL
NCP160AMX450TBG
4.5 V
DM
NCP160AMX500TBG (Note 7)
5.0 V
DW
NCP160AMX514TBG (Note 7)
5.14 V
NCP160BMX180TBG
1.8 V
NCP160BMX1825TBG (Note 7)
1.825 V
DC
250 mA,
Non-Active Discharge
EF
E7
NCP160BMX250TBG
2.5 V
EG
NCP160BMX275TBG (Note 7)
2.75 V
E2
NCP160BMX280TBG (Note 7)
2.8 V
EH
NCP160BMX285TBG (Note 7)
2.85 V
EJ
NCP160BMX300TBG
3.0 V
EK
NCP160BMX330TBG
3.3 V
EA
NCP160BMX350TBG
3.5 V
EL
NCP160BMX450TBG
4.5 V
EM
NCP160BMX500TBG
5.0 V
EW
NCP160BMX514TBG (Note 7)
5.14 V
EC
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
7. Product processed after October 1, 2022 are shipped with quantity 5000 units / tape & reel.
www.onsemi.com
19
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WLCSP4, 0.64x0.64x0.33
CASE 567JZ
ISSUE B
DATE 16 MAY 2022
GENERIC
MARKING DIAGRAM*
XM
X
M
= Specific Device Code
= Date Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON85781F
WLCSP4, 0.64X0.64x0.33
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WLCSP4, 0.64x0.64
CASE 567KA
ISSUE B
SCALE 4:1
DATE 24 MAR 2020
GENERIC
MARKING DIAGRAM*
XM
X
M
= Specific Device Code
= Date Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON85783F
WLCSP4, 0.64X0.64
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
XDFN4 1.0x1.0, 0.65P
CASE 711AJ
ISSUE C
GENERIC
MARKING DIAGRAM*
XX M
1
DOCUMENT NUMBER:
DESCRIPTION:
XX = Specific Device Code
M = Date Code
98AON67179E
XDFN4, 1.0X1.0, 0.65P
DATE 08 MAR 2022
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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