DATA SHEET
www.onsemi.com
LDO Regulator - Ultra-Low
Noise, High PSRR, RF and
Analog Circuits
MARKING
DIAGRAMS
WLCSP4
CASE 567JZ
250 mA
NCP163
The NCP163 is a next generation of high PSRR, ultra−low noise
LDO capable of supplying 250 mA output current. Designed to meet
the requirements of RF and sensitive analog circuits, the NCP163
device provides ultra−low noise, high PSRR and low quiescent
current. The device also offer excelent load/line transients. The
NCP163 is designed to work with a 1 mF input and a 1 mF output
ceramic capacitor. It is available in two thickness ultra−small 0.35P,
WLCSP Packages, XDFN4 0.65P and industry standard SOT23−5L.
WLCSP4
A1
CASE 567KA/567XW
X
XDFN4
CASE 711AJ
1
X
A1
XX M
1
SOT23−5L
CASE 527AH
XXX MG
G
Features
•
•
•
•
•
•
•
•
•
•
•
Operating Input Voltage Range: 2.2 V to 5.5 V
Available in Fixed Voltage Option: 1.2 V to 5.3 V
±2% Accuracy Over Load/Temperature
Ultra Low Quiescent Current Typ. 12 mA
Standby Current: Typ. 0.1 mA
Very Low Dropout: 80 mV at 250 mA
Ultra High PSRR: Typ. 92 dB at 20 mA, f = 1 kHz
Ultra Low Noise: 6.5 mVRMS
Stable with a 1 mF Small Case Size Ceramic Capacitors
Available in − WLCSP4: 0.64 mm x 0.64 mm x 0.33 mm
− WLCSP4: 0.64 mm x 0.64 mm x 0.4 mm
− XDFN4: 1 mm x 1 mm x 0.4 mm
− SOT23−5: 2.9 mm x 2.8 mm x 1.2 mm
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
•
•
•
•
Battery−powered Equipment
Wireless LAN Devices
Smartphones, Tablets
Cameras, DVRs, STB and Camcorders
XM
X, XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
IN
OUT
A1
A2
B1
B2
EN
GND
(Top View)
IN
1
GND
2
EN
3
(Top View)
5
OUT
4
NC
(Top View)
VIN
IN
VOUT
OUT
ORDERING INFORMATION
NCP163
CIN
1 mF
Ceramic
EN
COUT
1 mF
Ceramic
ON
OFF
GND
See detailed ordering, marking and shipping information on
page 18 of this data sheet.
Figure 1. Typical Application Schematics
© Semiconductor Components Industries, LLC, 2016
September, 2022 − Rev. 15
1
Publication Order Number:
NCP163/D
NCP163
IN
EN
ENABLE
THERMAL
LOGIC
SHUTDOWN
BANDGAP
MOSFET
REFERENCE
INTEGRATED
DRIVER WITH
SOFT−START
CURRENT LIMIT
OUT
* ACTIVE DISCHARGE
Version A only
EN
GND
Figure 2. Simplified Schematic Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
WLCSP4
Pin No.
SOT23−5L
Pin No.
XDFN4
Pin
Name
A1
1
4
IN
A2
5
1
OUT
B1
3
3
EN
B2
2
2
GND
−
4
−
NC
−
−
EPAD
EPAD
Description
Input voltage supply pin
Regulated output voltage. The output should be bypassed with small 1 mF ceramic
capacitor.
Chip enable: Applying VEN < 0.4 V disables the regulator, Pulling VEN > 1.2 V
enables the LDO.
Common ground connection
Not connected. Can be tied to ground plane.
Exposed pad. Can be tied to ground plane for better power dissipation.
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VIN
−0.3 V to 6
V
Output Voltage
VOUT
−0.3 to VIN + 0.3, max. 6 V
V
Chip Enable Input
VCE
−0.3 to 6 V
V
Output Short Circuit Duration
tSC
unlimited
s
Maximum Junction Temperature
TJ
150
°C
Input Voltage (Note 1)
Storage Temperature
TSTG
−55 to 150
°C
ESD Capability, Human Body Model (Note 2)
ESDHBM
2000
V
ESD Capability, Machine Model (Note 2)
ESDMM
200
V
ESD Capability, Charged Device Model (Note 2)
ESDCDM
1000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114
ESD Machine Model tested per EIA/JESD22−A115
ESD Charged Device Model tested per EIA/JESD22−C101, Field Induced Charge Model
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
www.onsemi.com
2
NCP163
THERMAL CHARACTERISTICS
Rating
Symbol
Value
RqJA
198.1
Thermal Characteristics, WLCSP4 (Note 3), Thermal Resistance, Junction−to−Air
Thermal Characteristics, XDFN4 (Note 3), Thermal Resistance, Junction−to−Air
Unit
108
Thermal Characteristics, SOT23−5 (Note 3), Thermal Resistance, Junction−to−Air
°C/W
218
3. Measured according to JEDEC board specification. Detailed description of the board can be found in JESD51−7
ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 1 V; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise
noted. VEN = 1.2 V. Typical values are at TJ = +25°C (Note 4).
Parameter
Test Conditions
Operating Input Voltage
Output Voltage Accuracy
Symbol
Min
VIN
VIN = (VOUT(NOM) + 1 V) to 5.5 V
0 mA ≤ IOUT ≤ 250 mA
VIN = (VOUT(NOM) + 1 V) to 5.5 V
0 mA ≤ IOUT ≤ 250 mA
(for VOUT < 1.8 V, XDFN4 package)
VOUT
VIN = (VOUT(NOM) + 1 V) to 5.5 V
SOT23−5L Package Only
Line Regulation
Load Regulation
Dropout Voltage (Note 5)
Dropout Voltage (Note 5)
VOUT(NOM) + 1 V ≤ VIN ≤ 5.5 V
IOUT = 1mA to 250mA
IOUT = 250 mA
(WLCSP, XDFN4
Packages)
WLCSP, XDFN4
SOT23−5L
Unit
2.2
5.5
V
−2
+2
−3
+3
−2
+2
0.02
0.001
LoadReg
0.015
VOUT(NOM) = 1.8 V
180
250
VOUT(NOM) = 2.5 V
110
175
VOUT(NOM) = 2.8 V
95
160
VOUT(NOM) = 3.0 V
90
155
85
149
VOUT(NOM) = 3.3 V
80
145
VOUT(NOM) = 3.5 V
75
140
VOUT(NOM) = 4.5 V
65
120
VOUT(NOM) = 5.0 V
75
105
VOUT(NOM) = 1.8 V
205
280
120
190
115
185
105
175
VOUT(NOM) = 2.8 V
VOUT(NOM) = 3.0 V
VDO
VDO
VOUT(NOM) = 3.3 V
mV
mV
VOUT = 90% VOUT(NOM)
ICL
Short Circuit Current
VOUT = 0 V
ISC
690
Quiescent Current
IOUT = 0 mA
IQ
12
20
mA
Shutdown Current
VEN ≤ 0.4 V, VIN = 4.8 V
IDIS
0.01
1
mA
EN Input Voltage “H”
VENH
EN Input Voltage “L”
VENL
VEN = 4.8 V
IEN
EN Pull Down Current
Turn−On Time
Power Supply Rejection Ratio
COUT = 1 mF, From
assertion of VEN to
VOUT =
95% VOUT(NOM)
IOUT = 20 mA
700
%/mA
Output Current Limit
EN Pin Threshold Voltage
250
%
%/V
0.008
VOUT(NOM) = 3.2 V
IOUT = 250 mA
(SOT23−5L
Package)
Max
LineReg
Typ
1.2
0.4
0.2
“A” Option
120
“C” Option
135
f = 100 Hz
f = 1 kHz
f = 10 kHz
f = 100 kHz
91
92
85
60
www.onsemi.com
3
PSRR
mA
0.5
V
mA
ms
dB
NCP163
ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 1 V; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise
noted. VEN = 1.2 V. Typical values are at TJ = +25°C (Note 4).
Parameter
Output Voltage Noise
Thermal Shutdown Threshold
Active Output Discharge Resistance
Line Transient (Note 6)
Test Conditions
f = 10 Hz to 100 kHz
IOUT = 1 mA
IOUT = 250 mA
Min
Typ
Max
Unit
VN
8.0
6.5
mVRMS
Temperature rising
TSDH
160
°C
Temperature falling
TSDL
140
°C
VEN < 0.4 V, Version A only
RDIS
280
W
VIN = (VOUT(NOM) + 1 V) to (VOUT(NOM) +
1.6 V) in 30 ms, IOUT = 1 mA
VIN = (VOUT(NOM) + 1.6 V) to (VOUT(NOM) +
1 V) in 30 ms, IOUT = 1 mA
Load Transient (Note 6)
Symbol
IOUT = 1 mA to 200 mA in 10 ms
IOUT = 200 mA to 1mA in 10 ms
−1
TranLINE
mV
+1
TranLOAD
−40
+40
mV
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C.
Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.
5. Dropout voltage is characterized when VOUT falls 100 mV below VOUT(NOM).
6. Guaranteed by design.
www.onsemi.com
4
NCP163
TYPICAL CHARACTERISTICS
3.330
VOUT, OUTPUT VOLTAGE (V)
3.335
1.825
VOUT, OUTPUT VOLTAGE (V)
1.830
1.820
1.815
IOUT = 10 mA
1.810
1.805
IOUT = 250 mA
1.800
1.795
VIN = 2.8 V
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
1.790
1.785
1.780
−40 −20
0
20
40
60
80
100
120
140
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
3.300
3.295
3.290
3.285
−40 −20
0
20
40
60
80
100
120 140
0.05
5.025
IOUT = 10 mA
5.020
5.015
IOUT = 250 mA
5.010
5.005
VIN = 5.5 V
VOUT = 5.0 V
CIN = 1 mF
COUT = 1 mF
5.000
4.995
0
20
40
60
80
100
120
REGLINE, LINE REGULATION (%/V)
VOUT, OUTPUT VOLTAGE (V)
3.305
Figure 4. Output Voltage vs. Temperature −
VOUT = 3.3 V − XDFN Package
4.990
−40 −20
140
0.04
0.03
0.02
0.01
0
−0.01
VIN = 2.8 V
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
−0.02
−0.03
−0.04
−0.05
−40 −20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Output Voltage vs. Temperature −
VOUT = 5.0 V − XDFN Package
Figure 6. Line Regulation vs. Temperature −
VOUT = 1.8 V
REGLOAD, LOAD REGULATION (mV)
0.050
REGLINE, LINE REGULATION (%/V)
IOUT = 250 mA
3.310
Figure 3. Output Voltage vs. Temperature −
VOUT = 1.8 V − XDFN Package
5.030
0.040
0.030
0.020
0.010
0
−0.010
−0.040
IOUT = 10 mA
3.315
TJ, JUNCTION TEMPERATURE (°C)
5.035
−0.030
3.320
TJ, JUNCTION TEMPERATURE (°C)
5.040
−0.020
3.325
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
−0.050
−40 −20
0
20
40
60
80
100
120
140
20
VIN = 2.8 V
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
18
16
14
12
10
8
6
4
2
0
−40 −20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Line Regulation vs. Temperature −
VOUT = 3.3 V
Figure 8. Load Regulation vs. Temperature −
VOUT = 1.8 V
www.onsemi.com
5
NCP163
REGLOAD, LOAD REGULATION (mV)
20
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
18
16
14
12
10
8
6
4
2
0
−40 −20
0
20
40
60
80
100
120
140
18
16
14
12
10
8
6
2
0
−40 −20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Load Regulation vs. Temperature −
VOUT = 3.3 V
Figure 10. Load Regulation vs. Temperature −
VOUT = 5.0 V
1500
1500
1350
1200
TJ = 125°C
1050
TJ = 25°C
900
750
TJ = −40°C
600
450
VIN = 2.8 V
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
300
150
0
25
50
75
1200
TJ = 125°C
1050
TJ = 25°C
900
750
TJ = −40°C
600
450
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
300
150
0
100 125 150 175 200 225 250
0
25
50
75
100 125 150 175 200 225 250
IOUT, OUTPUT CURRENT (mA)
IOUT, OUTPUT CURRENT (mA)
Figure 11. Ground Current vs. Load Current −
VOUT = 1.8 V
Figure 12. Ground Current vs. Load Current −
VOUT = 3.3 V
250
VDROP, DROPOUT VOLTAGE (mV)
1500
1350
1200
1050
TJ = 25°C
TJ = 125°C
900
750
TJ = −40°C
600
450
VIN = 5.5 V
VOUT = 5.0 V
CIN = 1 mF
COUT = 1 mF
300
150
0
VIN = 5.5 V
VOUT = 5.0 V
CIN = 1 mF
COUT = 1 mF
4
1350
0
IGND, GROUND CURRENT (mA)
20
TJ, JUNCTION TEMPERATURE (°C)
IGND, GROUND CURRENT (mA)
IGND, GROUND CURRENT (mA)
REGLOAD, LOAD REGULATION (mV)
TYPICAL CHARACTERISTICS
0
25
50
75
100 125 150 175 200
200
TJ = 125°C
TJ = 25°C
175
150
125
TJ = −40°C
100
75
50
25
0
225 250
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
225
0
25
50
75
100 125 150 175 200 225 250
IOUT, OUTPUT CURRENT (mA)
IOUT, OUTPUT CURRENT (mA)
Figure 13. Ground Current vs. Load Current −
VOUT = 5.0 V
Figure 14. Dropout Voltage vs. Load Current −
VOUT = 1.8 V
www.onsemi.com
6
NCP163
TYPICAL CHARACTERISTICS
150
VDROP, DROPOUT VOLTAGE (mV)
VDROP, DROPOUT VOLTAGE (mV)
150
135
120
TJ = 125°C
105
TJ = 25°C
90
75
60
TJ = −40°C
45
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
30
15
0
0
25
50
75
100 125 150 175 200
225 250
45
TJ = −40°C
30
15
0
0
25
50
75
VOUT = 5.0 V
CIN = 1 mF
COUT = 1 mF
100 125 150 175 200 225 250
150
VDROP, DROPOUT VOLTAGE (mV)
VDROP, DROPOUT VOLTAGE (mV)
TJ = 25°C
60
Figure 16. Dropout Voltage vs. Load Current −
VOUT = 5.0 V
IOUT = 250 mA
175
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
IOUT = 100 mA
75
50
25
0
−40 −20
IOUT = 10 mA
0
20
40
60
80
100
120 140
135
120
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
IOUT = 250 mA
105
90
75
IOUT = 100 mA
60
IOUT = 10 mA
45
30
15
0
−40 −20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 17. Dropout Voltage vs. Temperature −
VOUT = 1.8 V
Figure 18. Dropout Voltage vs. Temperature −
VOUT = 3.3 V
100
720
IOUT = 250 mA
90
80
700
ICL, CURRENT LIMIT (mA)
VDROP, DROPOUT VOLTAGE (mV)
75
Figure 15. Dropout Voltage vs. Load Current −
VOUT = 3.3 V
200
100
TJ = 125°C
90
IOUT, OUTPUT CURRENT (mA)
225
125
120
105
IOUT, OUTPUT CURRENT (mA)
250
150
135
IOUT = 100 mA
70
60
50
IOUT = 10 mA
40
30
VOUT = 5.0 V
CIN = 1 mF
COUT = 1 mF
20
10
0
−40 −20
0
20
40
60
80
100
680
660
640
620
600
560
540
520
−40 −20
120 140
VIN = 4.3 V
VOUT = 90% VOUT(nom)
CIN = 1 mF
COUT = 1 mF
580
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 19. Dropout Voltage vs. Temperature −
VOUT = 5.0 V
Figure 20. Current Limit vs. Temperature
www.onsemi.com
7
NCP163
VEN, ENABLE VOLTAGE THRESHOLD (V)
700
680
660
640
620
600
580
VIN = 4.3 V
VOUT = 0 V (SHORT)
CIN = 1 mF
COUT = 1 mF
560
540
520
500
−40 −20
0
20
40
60
80
100
120 140
0.9
0.8
0.7
0.6
0.4
0.2
0.1
0
−40 −20
0
20
40
60
80
100
120 140
Figure 21. Short Circuit Current vs.
Temperature
Figure 22. Enable Thresholds Voltage
0.45
90
0.40
0.35
0.30
0.25
0.20
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
0.15
0.10
0.05
0
−40 −20
270
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
0.3
100
280
ON −> OFF
0.5
0.50
290
OFF −> ON
TJ, JUNCTION TEMPERATURE (°C)
0
20
40
60
80
100
120 140
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
80
70
60
50
40
30
20
10
0
−40 −20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 23. Current to Enable Pin vs.
Temperature
Figure 24. Disable Current vs. Temperature
100
300
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
260
10
Unstable Operation
1
Stable Operation
ESR (W)
RDIS, DISCHARGE RESISTIVITY (W)
1.0
TJ, JUNCTION TEMPERATURE (°C)
IDIS, DISABLE CURRENT (nA)
IEN, ENABLE PIN CURRENT (mA)
ISC, SHORT CIRCUIT CURRENT (mA)
TYPICAL CHARACTERISTICS
250
240
230
220
210
200
−40 −20
0
20
40
60
80
100
0.1
120 140
0
50
100
150
200
250
300
TJ, JUNCTION TEMPERATURE (°C)
IOUT, OUTPUT CURRENT (mA)
Figure 25. Discharge Resistance vs.
Temperature
Figure 26. Maximum COUT ESR Value vs. Load
Current
www.onsemi.com
8
NCP163
TYPICAL CHARACTERISTICS
OUTPUT NOISE (nV/√Hz)
10K
1 mA
10 mA
250 mA
1K
100
10
1
RMS Output Noise (mV)
10 Hz − 100 kHz 100 Hz − 100 kHz
IOUT
1 mA
7.73
6.99
10 mA
7.12
6.26
250 mA
7.11
6.33
VIN = 2.8 V
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
10
100
1K
10K
1M
100K
FREQUENCY (Hz)
Figure 27. Output Voltage Noise Spectral Density – VOUT = 1.8 V
OUTPUT NOISE (nV/√Hz)
10K
1 mA
10 mA
250 mA
1K
100
10
1
RMS Output Noise (mV)
10 Hz − 100 kHz 100 Hz − 100 kHz
IOUT
1 mA
7.9
7.07
10 mA
7.19
6.25
250 mA
7.29
6.38
VIN = 3.8 V
VOUT = 2.8 V
CIN = 1 mF
COUT = 1 mF
10
100
1K
10K
1M
100K
FREQUENCY (Hz)
Figure 28. Output Voltage Noise Spectral Density – VOUT = 2.8 V
120
VIN = 2.8 V+100mVpp
VOUT = 1.8 V
COUT = 1 mF MLCC 1206
100
RR, RIPPLE REJECTION (dB)
RR, RIPPLE REJECTION (dB)
120
80
60
40
1 mA
10 mA
20 mA
100 mA
250 mA
20
0
10
100
1K
10K
100K
1M
100
80
60
1 mA
10 mA
20 mA
100 mA
250 mA
40
20
0
10M
VIN = 4.3 V+100mVpp
VOUT = 3.3 V
COUT = 1 mF MLCC 1206
10
100
1K
10K
100K
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 29. Power Supply Rejection Ratio −
VOUT = 1.8 V
Figure 30. Power Supply Rejection Ratio −
VOUT = 3.3 V
www.onsemi.com
9
10M
NCP163
TYPICAL CHARACTERISTICS
RR, RIPPLE REJECTION (dB)
120
100
80
60
1 mA
10 mA
20 mA
100 mA
250 mA
40
20
0
10
100
VIN = 5.5 V+100mVpp
VOUT = 5.0 V
COUT = 1 mF MLCC 1206
1K
10K
100K
1M
10M
FREQUENCY (Hz)
500 mV/div
VIN = 4.3 V
VOUT = 3.3 V
COUT = 1 mF (MLCC)
IINPUT
1 V/div
VOUT
VEN
VOUT
200 mA/div
VEN
IINPUT
VIN = 4.3 V
VOUT = 3.3 V
COUT = 4.7 mF (MLCC)
50 ms/div
Figure 33. Enable Turn−on Response −
COUT = 4.7 mF, IOUT = 10 mA − “A” Option
500 mV/div
50 ms/div
Figure 32. Enable Turn−on Response −
COUT = 1 mF, IOUT = 10 mA − “A” Option
VOUT
VIN = 4.3 V
VOUT = 3.3 V
COUT = 1 mF (MLCC)
IINPUT
VEN
1 V/div
VEN
VOUT
200 mA/div
200 mA/div
1 V/div
500 mV/div
200 mA/div
1 V/div
500 mV/div
Figure 31. Power Supply Rejection Ratio −
VOUT = 5.0 V
IINPUT
VIN = 4.3 V
VOUT = 3.3 V
COUT = 4.7 mF (MLCC)
50 ms/div
50 ms/div
Figure 34. Enable Turn−on Response −
COUT = 1 mF, IOUT = 250 mA − “A” Option
Figure 35. Enable Turn−on Response −
COUT = 4.7 mF, IOUT = 250 mA − “A” Option
www.onsemi.com
10
NCP163
IINPUT
500 mV/div
VIN = 3.85 V
VOUT = 2.85 V
COUT = 1 mF (MLCC)
IOUT = 0 mA
200 mA/div
200 mA/div
VOUT
1 V/div
VEN
1 V/div
500 mV/div
TYPICAL CHARACTERISTICS
VEN
VOUT
IINPUT
VIN = 3.85 V
VOUT = 2.85 V
COUT = 1 mF (MLCC)
IOUT = 0 mA
50 ms/div
50 ms/div
Figure 36. Enable Turn−on Response −
COUT = 1 mF − “A” Option − Normal
Figure 37. Enable Turn−on Response −
COUT = 1 mF − “C” Option − Slow
www.onsemi.com
11
NCP163
TYPICAL CHARACTERISTICS
3.3 V
tFALL = 1 ms
500 mV/div
2.3 V
VIN
VIN
tRISE = 1 ms
10 mV/div
VOUT = 1.8 V, IOUT = 10 mA
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
VOUT
2.3 V
VOUT = 1.8 V, IOUT = 10 mA
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
VOUT
2 ms/div
2 ms/div
Figure 38. Line Transient Response −
IOUT = 10 mA
Figure 39. Line Transient Response −
IOUT = 10 mA
2.3 V
VOUT
tRISE = 1 ms
VOUT = 1.8 V, IOUT = 250 mA
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
10 mV/div
VIN
500 mV/div
3.3 V
VIN
3.3 V
tFALL = 1 ms
2.3 V
VOUT = 1.8 V, IOUT = 250 mA
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
VOUT
2 ms/div
2 ms/div
Figure 40. Line Transient Response −
IOUT = 250 mA
Figure 41. Line Transient Response −
IOUT = 250 mA
IOUT
100 mA/div
IOUT
tRISE = 1 ms
tFALL = 1 ms
VIN = 3.8 V, VOUT = 3.3 V
CIN = 1 mF (MLCC)
COUT = 4.7 mF
20 mV/div
20 mV/div
100 mA/div
10 mV/div
500 mV/div
10 mV/div
500 mV/div
3.3 V
VOUT
COUT = 4.7 mF
COUT = 1 mF
VOUT
COUT = 1 mF
VIN = 3.8 V, VOUT = 3.3 V
CIN = 1 mF (MLCC)
5 ms/div
10 ms/div
Figure 42. Load Transient Response −
1 mA to 250 mA
Figure 43. Load Transient Response −
250 mA to 1 mA
www.onsemi.com
12
NCP163
TYPICAL CHARACTERISTICS
VIN = 3.8 V, VOUT = 3.3 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
100 mA/div
IOUT
VIN = 3.8 V, VOUT = 3.3 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
tRISE = 500 ns
20 mV/div
20 mV/div
100 mA/div
IOUT
VOUT
tRISE = 1 ms
VOUT
tRISE = 1 ms
tRISE = 500 ns
5 ms/div
5 ms/div
Figure 44. Load Transient Response −
1 mA to 250 mA
Figure 45. Load Transient Response −
250 mA to 1 mA
1 V/div
VOUT
VIN
TSD On
VOUT
TSD Off
VIN = 3.8 V
VOUT = 3.3 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
IOUT = 10 mA
500 mV/div
IOUT
10 ms/div
2 ms/div
Figure 46. Overheating Protection − TSD
Figure 47. Turn−on/off − Slow Rising VIN
VEN
500 mV/div
VIN = 3.8 V
VOUT = 2.8 V
CIN = 1 mF (MLCC)
VOUT
COUT = 10 mF
1 V/div
100 mA/div
VIN = 5.5 V, VOUT = 1.2 V
CIN = 1 mF (MLCC), COUT = 1 mF (MLCC)
COUT = 4.7 mF
COUT = 1 mF
400 ms/div
Figure 48. Enable Turn−off − Various Output
Capacitors
www.onsemi.com
13
NCP163
APPLICATIONS INFORMATION
General
transient response or high frequency PSRR. It is not
recommended to use tantalum capacitors on the output due
to their large ESR. The equivalent series resistance of
tantalum capacitors is also strongly dependent on the
temperature, increasing at low temperature.
The NCP163 is an ultra−low noise 250 mA low dropout
regulator designed to meet the requirements of RF
applications and high performance analog circuits. The
NCP163 device provides very high PSRR and excellent
dynamic response. In connection with low quiescent current
this device is well suitable for battery powered application
such as cell phones, tablets and other. The NCP163 is fully
protected in case of current overload, output short circuit and
overheating.
Enable Operation
The NCP163 uses the EN pin to enable/disable its device
and to deactivate/activate the active discharge function.
If the EN pin voltage is 1.2 V the device is guaranteed to
be enabled. The NCP163 regulates the output voltage and
the active discharge transistor is turned−off.
The EN pin has internal pull−down current source with
typ. value of 200 nA which assures that the device is
turned−off when the EN pin is not connected. In the case
where the EN function isn’t required the EN should be tied
directly to IN.
The NCP163 provides soft−start feature ensures smooth
monotonous output voltage rising. It prevents excessive
input current after EN pin turn−on when big output
capacitance is connected.
There are two slew−rate options of start−up ramp. The
normal ”A” option and slower ”C” option. For more
information please refer ordering information table.
Input Capacitor Selection (CIN)
Input capacitor connected as close as possible is necessary
for ensure device stability. The X7R or X5R capacitor
should be used for reliable performance over temperature
range. The value of the input capacitor should be 1 mF or
greater to ensure the best dynamic performance. This
capacitor will provide a low impedance path for unwanted
AC signals or noise modulated onto constant input voltage.
There is no requirement for the ESR of the input capacitor
but it is recommended to use ceramic capacitors for their low
ESR and ESL. A good input capacitor will limit the
influence of input trace inductance and source resistance
during sudden load current changes.
Output Decoupling (COUT)
The NCP163 requires an output capacitor connected as
close as possible to the output pin of the regulator. The
recommended capacitor value is 1 mF and X7R or X5R
dielectric due to its low capacitance variations over the
specified temperature range. The NCP163 is designed to
remain stable with minimum effective capacitance of 0.7 mF
to account for changes with temperature, DC bias and
package size. Especially for small package size capacitors
such as 0201 the effective capacitance drops rapidly with the
applied DC bias. Please refer Figure 49.
Output Current Limit
Output Current is internally limited within the IC to a
typical 700 mA. The NCP163 will source this amount of
current measured with a voltage drops on the 90% of the
nominal VOUT. If the Output Voltage is directly shorted to
ground (VOUT = 0 V), the short circuit protection will limit
the output current to 690 mA (typ). The current limit and
short circuit protection will work properly over whole
temperature range and also input voltage range. There is no
limitation for the short circuit duration.
Thermal Shutdown
When the die temperature exceeds the Thermal Shutdown
threshold (TSD − 160°C typical), Thermal Shutdown event
is detected and the device is disabled. The IC will remain in
this state until the die temperature decreases below the
Thermal Shutdown Reset threshold (TSDU − 140°C typical).
Once the IC temperature falls below the 140°C the LDO is
enabled again. The thermal shutdown feature provides the
protection from a catastrophic device failure due to
accidental overheating. This protection is not intended to be
used as a substitute for proper heat sinking.
Figure 49. Capacity vs DC Bias Voltage
There is no requirement for the minimum value of
Equivalent Series Resistance (ESR) for the COUT but the
maximum value of ESR should be less than 2 W. Larger
output capacitors and lower ESR could improve the load
www.onsemi.com
14
NCP163
Power Dissipation
P D(MAX) +
ƪ125oC * T Aƫ
q JA
P D [ V IN @ I GND ) I OUTǒV IN * V OUTǓ
160
1.6
PD(MAX), TA = 25°C, 2 oz Cu
150
PD(MAX), TA = 25°C, 1 oz Cu
140
1.4
1.2
130
1.0
120
0.8
qJA, 1 oz Cu
110
0.6
0.4
100
qJA, 2 oz Cu
90
80
0
100
200
(eq. 1)
The power dissipated by the NCP163 for given
application conditions can be calculated from the following
equations:
300
400
500
0.2
600
PCB COPPER AREA (mm2)
Figure 50. qJA and PD (MAX) vs. Copper Area (CSP4)
www.onsemi.com
15
0
700
PD(MAX), MAXIMUM POWER DISSIPATION (W)
qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (°C/W)
As power dissipated in the NCP163 increases, it might
become necessary to provide some thermal relief. The
maximum power dissipation supported by the device is
dependent upon board design and layout. Mounting pad
configuration on the PCB, the board material, and the
ambient temperature affect the rate of junction temperature
rise for the part.
The maximum power dissipation the NCP163 can handle
is given by:
(eq. 2)
220
1.0
qJA, 1 oz Cu
210
0.9
200
0.8
qJA, 2 oz Cu
190
PD(MAX), TA = 25°C, 2 oz Cu
PD(MAX), TA = 25°C, 1 oz Cu
180
0.7
0.6
170
0.5
160
0.4
150
0
100
200
300
400
PCB COPPER AREA (mm2)
500
600
PD(MAX), MAXIMUM POWER DISSIPATION (W)
qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (°C/W)
NCP163
0.3
700
0.7
325
PD(MAX), TA = 25°C, 2 oz Cu
300
PD(MAX), TA = 25°C, 1 oz Cu
275
250
0.6
0.5
0.4
qJA, 1 oz Cu
225
0.3
qJA, 2 oz Cu
200
0.2
175
150
0.1
0
100
200
300
400
PCB COPPER AREA (mm2)
500
600
Figure 52. qJA and PD (MAX) vs. Copper Area (SOT23−5L)
www.onsemi.com
16
0
700
PD(MAX), MAXIMUM POWER DISSIPATION (W)
qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (°C/W)
Figure 51. qJA and PD (MAX) vs. Copper Area (XDFN4)
NCP163
Reverse Current
Turn−On Time
The PMOS pass transistor has an inherent body diode
which will be forward biased in the case that VOUT > VIN.
Due to this fact in cases, where the extended reverse current
condition can be anticipated the device may require
additional external protection.
The turn−on time is defined as the time period from EN
assertion to the point in which VOUT will reach 98% of its
nominal value. This time is dependent on various
application conditions such as VOUT(NOM), COUT, TA.
Power Supply Rejection Ratio
To obtain good transient performance and good regulation
characteristics place CIN and COUT capacitors close to the
device pins and make the PCB traces wide. In order to
minimize the solution size, use 0402 or 0201 capacitors with
appropriate capacity. Larger copper area connected to the
pins will also improve the device thermal resistance. The
actual power dissipation can be calculated from the equation
above (Equation 2). Expose pad can be tied to the GND pin
for improvement power dissipation and lower device
temperature.
PCB Layout Recommendations
The NCP163 features very high Power Supply Rejection
ratio. If desired the PSRR at higher frequencies in the range
100 kHz – 10 MHz can be tuned by the selection of COUT
capacitor and proper PCB layout.
www.onsemi.com
17
NCP163
ORDERING INFORMATION (WLCSP4)
Device
Voltage
Option
Marking
Rotation
NCP163AFCS120T2G
1.2 V
2
0
NCP163AFCS180T2G
1.8 V
Y
180
NCP163AFCS250T2G
2.5 V
T
270
NCP163AFCS260T2G
2.6 V
4
180
NCP163AFCS270T2G
2.7 V
V
270
NCP163AFCS280T2G
2.8 V
3
180
NCP163AFCS285T2G
2.85 V
5
180
NCP163AFCS290T2G
2.9 V
6
180
NCP163AFCS2925T2G
2.925 V
2
180
NCP163BFCS180T2G
1.8 V
Y
270
NCP163BFCS2925T2G
2.925 V
2
270
NCP163CFCS285T2G
2.85 V
P
180
NCP163AFCT120T2G
1.2 V
A
0
NCP163AFCT180T2G
1.8 V
Y
180
NCP163AFCT250T2G
2.5 V
Y
90
NCP163AFCT260T2G
2.6 V
6
270
NCP163AFCT270T2G
2.7 V
5
180
NCP163AFCT280T2G
2.8 V
3
180
NCP163AFCT285T2G
2.85 V
5
270
NCP163AFCT290T2G
2.9 V
4
270
NCP163AFCT2925T2G
2.925 V
2
180
NCP163AFCT300T2G
3.0 V
3
270
NCP163AFCT330T2G
3.3 V
6
90
NCP163BFCT180T2G
1.8 V
Y
270
NCP163BFCT2925T2G
2.925 V
2
270
Description
250 mA, Active Discharge
Package
Shipping†
WLCSP4
CASE 567KA
(Pb-Free)
5000 /
Tape &
Reel
WLCSP4
CASE 567XW
(Pb-Free)
10000 /
Tape &
Reel
WLCSP4
CASE 567JZ
(Pb-Free)
5000 /
Tape &
Reel
250 mA, Non−Active Discharge
250 mA, Active Discharge
Slow Turn−On Slew
250 mA, Active Discharge
250 mA, Non−Active Discharge
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
18
NCP163
ORDERING INFORMATION (XDFN4)
Device
Voltage
Option
Marking
Description
Package
Shipping†
NCP163AMX120TBG* (Note 7)
1.2 V
ME
250 mA, Active Discharge
NCP163AMX130TBG* (Note 7)
1.3 V
MG
XDFN4
CASE 711AJ
(Pb-Free)
3000 or 5000 /
Tape & Reel
(Note 7)
NCP163AMX150TBG
1.5 V
MV
NCP163AMX180TBG (Note 7)
1.8 V
MA
NCP163AMX1825TBG (Note 7)
1.825 V
MC
NCP163AMX185TBG
(In Development)
1.85 V
MZ
NCP163AMX190TBG
1.9 V
MH
NCP163AMX250TBG
2.5 V
MU
NCP163AMX260TBG
2.6 V
MN
NCP163AMX270TBG (Note 7)
2.7 V
MX
NCP163AMX275TBG
2.75 V
MD
NCP163AMX280TBG (Note 7)
2.8 V
MM
NCP163AMX285TBG
2.85 V
MQ
NCP163AMX290TBG (Note 7)
2.9 V
MR
NCP163AMX300TBG (Note 7)
3.0 V
MJ
NCP163AMX330TBG (Note 7)
3.3 V
MK
NCP163AMX500TBG (Note 7)
5.0 V
ML
NCP163BMX180TBG (Note 7)
1.8 V
PA
NCP163BMX1825TBG (Note 7)
1.825 V
PC
NCP163BMX275TBG
2.75 V
PD
250 mA, Non−Active
Discharge
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*Contact sales office for availability information.
7. Product processed after October 1, 2022 are shipped with quantity 5000 units / tape & reel.
ORDERING INFORMATION (SOT23−5L)
Voltage
Option
Marking
Description
Package
Shipping†
NCP163ASN150T1G
1.5 V
KAK
250 mA, Active Discharge
3000 / Tape & Reel
NCP163ASN180T1G
1.8 V
KAA
SOT23−5L
CASE 527AH
(Pb-Free)
NCP163ASN250T1G
2.5 V
KAD
NCP163ASN270T1G
2.7 V
KAL
NCP163ASN280T1G
2.8 V
KAE
NCP163ASN300T1G
3.0 V
KAF
NCP163ASN330T1G
3.3 V
KAG
NCP163ASN350T1G
3.5 V
KAH
NCP163ASN500T1G
5.0 V
KAJ
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
19
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23, 5 Lead
CASE 527AH
ISSUE A
DATE 09 JUN 2021
q
q
q
q
q
q1
q2
GENERIC
MARKING DIAGRAM*
XXXM
XXX = Specific Device Code
M = Date Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34320E
SOT−23, 5 LEAD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WLCSP4, 0.64x0.64x0.33
CASE 567JZ
ISSUE B
DATE 16 MAY 2022
GENERIC
MARKING DIAGRAM*
XM
X
M
= Specific Device Code
= Date Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON85781F
WLCSP4, 0.64X0.64x0.33
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WLCSP4, 0.64x0.64
CASE 567KA
ISSUE B
SCALE 4:1
DATE 24 MAR 2020
GENERIC
MARKING DIAGRAM*
XM
X
M
= Specific Device Code
= Date Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON85783F
WLCSP4, 0.64X0.64
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WLCSP4, 0.64x0.64x0.40
CASE 567XW
ISSUE A
DATE 13 NOV 2019
GENERIC
MARKING DIAGRAM*
XM
X
M
= Specific Device Code
= Month
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON08375H
WLCSP4, 0.64x0.64x0.40
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
XDFN4 1.0x1.0, 0.65P
CASE 711AJ
ISSUE C
GENERIC
MARKING DIAGRAM*
XX M
1
DOCUMENT NUMBER:
DESCRIPTION:
XX = Specific Device Code
M = Date Code
98AON67179E
XDFN4, 1.0X1.0, 0.65P
DATE 08 MAR 2022
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales