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NCP170AMX310TCG

NCP170AMX310TCG

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    XDFN4_1X1MM_EP

  • 描述:

    IC REG LINEAR 3.1V 150MA 4XDFN

  • 数据手册
  • 价格&库存
NCP170AMX310TCG 数据手册
NCP170 LDO Regulator, 150 mA, Ultra‐Low IQ, CMOS The NCP170 series of CMOS low dropout regulators are designed specifically for portable battery-powered applications which require ultra-low quiescent current. The ultra-low consumption of typ. 500 nA ensures long battery life and dynamic transient boost feature improves device transient response for wireless communication applications. The device is available in small 1 × 1 mm XDFN4, SOT-563 and TSOP-5 packages. • Operating Input Voltage Range: 2.2 V to 5.5 V Output Voltage Range: 1.2 V to 3.6 V (0.1 V Steps) Ultra-Low Quiescent Current Typ. 0.5 mA Low Dropout: 170 mV Typ. at 150 mA High Output Voltage Accuracy ±1% Stable with Ceramic Capacitors 1 mF Over-Current Protection Thermal Shutdown Protection NCP170A for Active Discharge Option Available in Small 1 × 1 mm XDFN4, SOT−563 and TSOP-5 Packages These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant IN 1 mF XDFN4 MX SUFFIX CASE 711AJ SOT−563 XV SUFFIX CASE 463A 5 1 TSOP−5 SN SUFFIX CASE 483 MARKING DIAGRAMS XDFN4 XX M 1 XX = Specific Device Code M = Date Code SOT−563 XX MG XX = Specific Device Code M = Month Code G = Pb-Free Package • Battery Powered Equipments • Portable Communication Equipments • Cameras, Image Sensors and Camcorders VIN 1 1 Typical Applications CIN 6 1 Features • • • • • • • • • • www.onsemi.com NCP170 *Pb-Free indicator, “G” or microdot “G”, may or may not be present. VOUT OUT COUT EN TSOP−5 5 XXXAYWG G 1 mF GND 1 XXX = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Figure 1. Typical Application Schematic ORDERING INFORMATION See detailed ordering, marking and shipping information on page 21 of this data sheet. © Semiconductor Components Industries, LLC, 2017 May, 2019 − Rev. 18 1 Publication Order Number: NCP170/D NCP170 PIN FUNCTION DESCRIPTION Pin No. XDFN4 Pin No. SOT−563 Pin No. TSOP−5 Pin Name 4 1 1 IN 2 2 2 GND 3 6 3 EN 1 3 5 OUT Output Pin EPAD − − EPAD Internally Connected to GND − 4 4 NC − 5 − GND Description Power Supply Input Voltage Power Supply Ground Chip Enable Pin (Active “H”) No Connect Power Supply Ground ABSOLUTE MAXIMUM RATINGS Symbol VIN Rating Input Voltage (Note 1) VOUT Output Voltage VCE Chip Enable Input TJ(MAX) TSTG Maximum Junction Temperature Storage Temperature Value Unit 6.0 V −0.3 to VIN + 0.3 V −0.3 to 6.0 V 150 °C −55 to 150 °C ESDHBM ESD Capability, Human Body Model (Note 2) 2000 V ESDMM ESD Capability, Machine Model (Note 2) 200 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC-Q100-002 (EIA/JESD22-A114) ESD Machine Model tested per AEC-Q100-003 (EIA/JESD22-A115) Latchup Current Maximum Rating tested per JEDEC standard: JESD78 THERMAL CHARACTERISTICS Symbol RqJA Rating Value Thermal Characteristics, Thermal Resistance, Junction-to-Air XDFN4 1 × 1 mm SOT−563 TSOP−5 Figure 2. Simplified Block Diagram www.onsemi.com 2 250 200 250 Unit °C/W NCP170 ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 1.2 V (−40°C ≤ TJ ≤ 85°C; VIN = 2.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 3) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 − 5.5 V TA = +25°C 1.188 1.2 1.212 V −40°C ≤ TJ ≤ 85°C 1.176 1.2 1.224 Operating Input Voltage Output Voltage LineReg Line Regulation 2.5 V < VIN ≤ 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 2.5 V − 0.05 0.20 %/V −20 1 20 mV VDO Dropout Voltage (Note 4) − − − mV IOUT Output Current (Note 5) 150 − − mA ISC Short Circuit Current Limit VOUT = 0 V − 225 − mA IQ Quiescent Current IOUT = 0 mA − 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25°C − 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V EN Pin Current VEN ≤ VIN ≤ 5.5 V (Note 6) − 10 − nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 2.2 V + 200 mVpp Modulation IOUT = 150 mA IOUT = 10 mA − − 57 63 − − VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA, f = 100 Hz to 1 MHz, COUT = 1 mF − 85 − mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 6) − 100 − W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C (Note 6) − 175 − °C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 6) − 25 − °C IEN RLOW dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 4. Not Characterized at VIN = 2.2 V, VOUT = 1.2 V, IOUT = 150 mA. 5. Respect SOA. 6. Guaranteed by design and characterization. www.onsemi.com 3 NCP170 ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 1.5 V (−40°C ≤ TJ ≤ 85°C; VIN = 2.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 7) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 − 5.5 V TA = +25°C 1.485 1.5 1.515 V −40°C ≤ TJ ≤ 85°C 1.470 1.5 1.530 Operating Input Voltage Output Voltage LineReg Line Regulation 4.3 V < VIN ≤ 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 4.3 V − 0.05 0.20 %/V −20 − 20 mV VDO Dropout Voltage IOUT = 150 mA (Note 8) − − − mV IOUT Output Current (Note 9) 150 − − mA ISC Short Circuit Current Limit VOUT = 0 V − 225 − mA IQ Quiescent Current IOUT = 0 mA − 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25°C − 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V EN Pin Current VEN ≤ VIN ≤ 5.5 V (Note 10) − 10 − nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 2.5 V + 200 mVpp Modulation IOUT = 150 mA − 57 − VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA, f = 100 Hz to 1 MHz, COUT = 1 mF − 90 − mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 10) − 100 − W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C (Note 10) − 175 − °C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 10) − 25 − °C IEN RLOW dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 8. Not Characterized at VIN = 2.2 V, VOUT = 1.5 V, IOUT = 150 mA. 9. Respect SOA. 10. Guaranteed by design and characterization. www.onsemi.com 4 NCP170 ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 1.8 V (−40°C ≤ TJ ≤ 85°C; VIN = 2.8 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 11) Symbol VIN Parameter Test Conditions Min Typ Max Unit 2.2 − 5.5 V 2.0 − 5.5 TA = +25°C 1.782 1.8 1.818 −40°C ≤ TJ ≤ 85°C 1.764 1.8 1.836 − 0.05 0.20 %/V −20 1 20 mV − 350 480 mV 150 − − mA Operating Input Voltage IOUT < 30 mA VOUT Output Voltage V LineReg Line Regulation 2.8 V < VIN ≤ 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 2.8 V VDO Dropout Voltage IOUT = 150 mA (Note 12) IOUT Output Current (Note 13) ISC Short Circuit Current Limit VOUT = 0 V − 225 − mA IQ Quiescent Current IOUT = 0 mA − 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25°C − 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V EN Pull Down Current VEN ≤ VIN ≤ 5.5 V (Note 14) − 10 − nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 2.8 V + 200 mVpp Modulation IOUT = 150 mA − 57 − dB VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA f = 100 Hz to 1 MHz, COUT = 1 mF − 95 − mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 14) − 100 − W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C (Note 14) − 175 − °C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 14) − 25 − °C IEN RLOW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 11. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 12. Characterized when VOUT falls 54 mV below the regulated voltage and only for devices with VOUT = 1.8 V. 13. Respect SOA. 14. Guaranteed by design and characterization. www.onsemi.com 5 NCP170 ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 2.5 V (−40°C ≤ TJ ≤ 85°C; VIN = 3.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 15) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 − 5.5 V TA = +25°C 2.475 2.5 2.525 V −40°C ≤ TJ ≤ 85°C 2.450 2.5 2.550 Operating Input Voltage Output Voltage LineReg Line Regulation 3.5 V < VIN ≤ 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 3.5 V − 0.05 0.20 %/V −20 1 20 mV VDO Dropout Voltage IOUT = 150 mA (Note 16) − 240 330 mV IOUT Output Current (Note 17) 150 − − mA ISC Short Circuit Current Limit VOUT = 0 V − 225 − mA IQ Quiescent Current IOUT = 0 mA − 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25°C − 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V EN Pull Down Current VEN ≤ VIN ≤ 5.5 V (Note 18) − 10 − nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 3.5 V + 200 mVpp Modulation IOUT = 150 mA − 57 − dB VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA f = 100 Hz to 1 MHz, COUT = 1 mF − 125 − mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 18) − 100 − W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C (Note 18) − 175 − °C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 18) − 25 − °C IEN RLOW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 15. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 16. Characterized when VOUT falls 75 mV below the regulated voltage and only for devices with VOUT = 2.5 V. 17. Respect SOA. 18. Guaranteed by design and characterization. www.onsemi.com 6 NCP170 ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 2.8 V (−40°C ≤ TJ ≤ 85°C; VIN = 3.8 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 19) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 − 5.5 V TA = +25°C 2.772 2.8 2.828 V −40°C ≤ TJ ≤ 85°C 2.744 2.8 2.856 Operating Input Voltage Output Voltage LineReg Line Regulation 3.8 V < VIN ≤ 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 3.8 V − 0.05 0.20 %/V −20 1 20 mV VDO Dropout Voltage IOUT = 150 mA (Note 20) − 210 300 mV IOUT Output Current (Note 21) 150 − − mA ISC Short Circuit Current Limit VOUT = 0 V − 195 − mA IQ Quiescent Current IOUT = 0 mA − 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25°C − 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V EN Pull Down Current VEN ≤ VIN ≤ 5.5 V (Note 22) − 10 − nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 3.8 V + 200 mVpp Modulation IOUT = 150 mA − 40 − dB VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA f = 100 Hz to 1 MHz, COUT = 1 mF − 125 − mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 22) − 100 − W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C (Note 22) − 175 − °C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 22) − 25 − °C IEN RLOW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 19. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 20. Characterized when VOUT falls 84 mV below the regulated voltage and only for devices with VOUT = 2.8 V. 21. Respect SOA. 22. Guaranteed by design and characterization. www.onsemi.com 7 NCP170 ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 3.0 V (−40°C ≤ TJ ≤ 85°C; VIN = 4.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 23) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 − 5.5 V TA = +25°C 2.97 3.0 3.03 V −40°C ≤ TJ ≤ 85°C 2.94 3.0 3.06 Operating Input Voltage Output Voltage LineReg Line Regulation 4.0 V < VIN ≤ 5.5 V, IOUT = 1 mA − 0.05 0.20 %/V LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 4 V −20 1 20 mV VDO Dropout Voltage IOUT = 150 mA (Note 24) − 190 260 mV IOUT Output Current (Note 25) 150 − − mA ISC Short Circuit Current Limit VOUT = 0 V − 195 − mA IQ Quiescent Current IOUT = 0 mA − 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25°C − 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V EN Pull Down Current VEN ≤ VIN ≤ 5.5 V (Note 26) − 10 − nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 4.0 V + 200 mVpp Modulation IOUT = 150 mA − 47 − dB VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA f = 100 Hz to 1 MHz, COUT = 1 mF − 120 − mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 26) − 100 − W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C (Note 26) − 175 − °C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 26) − 25 − °C IEN RLOW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 23. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 24. Characterized when VOUT falls 90 mV below the regulated voltage and only for devices with VOUT = 3.0 V. 25. Respect SOA. 26. Guaranteed by design and characterization. www.onsemi.com 8 NCP170 ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 3.3 V (−40°C ≤ TJ ≤ 85°C; VIN = 4.3 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 27) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 − 5.5 V TA = +25°C 3.267 3.3 3.333 V −40°C ≤ TJ ≤ 85°C 3.234 3.3 3.366 Operating Input Voltage Output Voltage LineReg Line Regulation 4.3 V < VIN ≤ 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 4.3 V − 0.05 0.20 %/V −20 1 20 mV VDO Dropout Voltage IOUT = 150 mA (Note 28) − 180 250 mV IOUT Output Current (Note 29) 150 − − mA ISC Short Circuit Current Limit VOUT = 0 V − 195 − mA IQ Quiescent Current IOUT = 0 mA − 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25°C − 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V EN Pull Down Current VEN ≤ VIN ≤ 5.5 V (Note 30) − 10 − nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 4.3 V + 200 mVpp Modulation IOUT = 150 mA − 41 − dB VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA f = 100 Hz to 1 MHz, COUT = 1 mF − 125 − mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 30) − 100 − W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C (Note 30) − 175 − °C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 30) − 25 − °C IEN RLOW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 27. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 28. Characterized when VOUT falls 99 mV below the regulated voltage and only for devices with VOUT = 3.3 V. 29. Respect SOA. 30. Guaranteed by design and characterization. www.onsemi.com 9 NCP170 ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 3.6 V (−40°C ≤ TJ ≤ 85°C; VIN = 4.6 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 31) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 − 5.5 V TA = +25°C 3.564 3.6 3.636 V −40°C ≤ TJ ≤ 85°C 3.528 3.6 3.672 − 0.05 0.20 %/V −20 1 20 mV − 170 240 mV 150 − − mA Operating Input Voltage Output Voltage LineReg Line Regulation 4.6 V < VIN ≤ 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 4.6 V VDO Dropout Voltage IOUT = 150 mA (Note 32) IOUT Output Current (Note 33) ISC Short Circuit Current Limit VOUT = 0 V − 195 − mA IQ Quiescent Current IOUT = 0 mA − 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25°C − 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V EN Pull Down Current VEN ≤ VIN ≤ 5.5 V (Note 34) − 10 − nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 4.6 V + 200 mVpp Modulation IOUT = 150 mA − 30 − dB VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA f = 100 Hz to 1 MHz, COUT = 1 mF − 130 − mVrms RLOW Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 34) − 100 − TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C (Note 34) − 175 − °C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 34) − 25 − °C IEN Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 31. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 32. Characterized when VOUT falls 108 mV below the regulated voltage and only for devices with VOUT = 3.6 V. 33. Respect SOA. 34. Guaranteed by design and characterization. www.onsemi.com 10 NCP170 TYPICAL CHARACTERISTICS 1.202 1.802 Vin = 5.5 V Vin = 3.0 V 1.198 Vin = 2.2 V 1.196 1.798 Vin = 3.5 V 1.794 NCP170xxx120TyG Cin = Cout = 1 mF Iout = 1 mA 1.192 1.190 −40 −20 0 20 40 NCP170xxx180TyG Cin = Cout = 1 mF Iout = 1 mA 1.792 60 1.790 −40 80 −20 0 20 40 60 80 TEMPERATURE (°C) TEMPERATURE (°C) Figure 3. Output Voltage vs. Temperature, Vout = 1.2 V Figure 4. Output Voltage vs. Temperature, Vout = 1.8 V 3.008 3.604 Vin = 5.5 V 3.000 Vin = 3.3 − 4.5 V 2.996 Vin = 5.0 V 2.992 NCP170xxx300TyG Cin = Cout = 1 mF Iout = 1 mA 2.988 2.984 −40 −20 0 20 40 60 Vin = 5.5 V 3.600 OUTPUT VOLTAGE (V) 3.004 OUTPUT VOLTAGE (V) Vin = 2.8 V 1.796 1.194 3.596 Vin = 3.8 − 4.5 V Vin = 5.0 V 3.592 3.588 NCP170xxx360TyG Cin = Cout = 1 mF Iout = 1 mA 3.584 3.580 −40 80 −20 0 20 40 60 80 TEMPERATURE (°C) TEMPERATURE (°C) Figure 5. Output Voltage vs. Temperature, Vout = 3.0 V Figure 6. Output Voltage vs. Temperature, Vout = 3.6 V 1.200 1.802 Vin = 2.5 V 1.198 Vin = 3.0 V 1.197 Vin = 4.0 V 1.196 NCP170xxx120TyG Cin = Cout = 1 mF TA = 25°C 1.195 0 20 40 60 Vin = 5.5 V 80 100 120 OUTPUT VOLTAGE (V) 1.800 OUTPUT VOLTAGE (V) 1.199 1.194 Vin = 5.5 V 1.800 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 1.200 Vin = 2.8 V 1.798 Vin = 4.0 V 1.796 Vin = 4.5 V 1.794 NCP170xxx180TyG Cin = Cout = 1 mF TA = 25°C 1.792 1.790 140 0 20 40 60 Vin = 5.5 V 80 100 120 140 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 7. Output Voltage vs. Output Current, Vout = 1.2 V Figure 8. Output Voltage vs. Output Current, Vout = 1.8 V www.onsemi.com 11 NCP170 TYPICAL CHARACTERISTICS 3.002 3.599 3.000 Vin = 4.5 V 2.999 Vin = 5.0 V 2.998 NCP170xxx300TyG Cin = Cout = 1 mF TA = 25°C 2.997 2.996 0 450 40 60 3.597 3.596 Vin = 4.6 V 3.595 Vin = 5.5 V 80 100 120 3.593 140 40 60 80 100 120 140 Figure 10. Output Voltage vs. Output Current, Vout = 3.6 V 300 TA = 85°C 250 TA = −40°C 200 150 100 50 20 40 60 80 100 120 NCP170xxx250TyG Cin = Cout = 1 mF 250 TA = 85°C TA = 25°C 200 150 TA = −40°C 100 50 0 140 0 20 40 60 80 100 120 140 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 11. Dropout Voltage vs. Output Current, Vout = 1.8 V Figure 12. Dropout Voltage vs. Output Current, Vout = 2.5 V 200 250 NCP170xxx300TyG Cin = Cout = 1 mF 200 TA = 85°C TA = 25°C 150 TA = −40°C 100 50 0 20 40 60 80 100 120 DROPOUT VOLTAGE (mV) DROPOUT VOLTAGE (mV) 20 Figure 9. Output Voltage vs. Output Current, Vout = 3.0 V 300 0 0 Vin = 5.5 V OUTPUT CURRENT (mA) TA = 25°C 0 Vin = 5.0 V NCP170xxx360TyG Cin = Cout = 1 mF TA = 25°C OUTPUT CURRENT (mA) 350 0 Vin = 4.3 V 3.594 NCP170xxx180TyG Cin = Cout = 1 mF 400 DROPOUT VOLTAGE (mV) 20 3.598 OUTPUT VOLTAGE (V) Vin = 4.0 V DROPOUT VOLTAGE (mV) OUTPUT VOLTAGE (V) 3.001 TA = 25°C 150 125 100 TA = −40°C 75 50 25 0 140 TA = 85°C NCP170xxx360TyG Cin = Cout = 1 mF 175 0 20 40 60 80 100 120 140 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 13. Dropout Voltage vs. Output Current, Vout = 3.0 V Figure 14. Dropout Voltage vs. Output Current, Vout = 3.6 V www.onsemi.com 12 NCP170 TYPICAL CHARACTERISTICS 0.55 Vin = 5.5 V 0.50 Vin = 2.5 − 4.0 V 0.45 0.40 Vin = 5.0 V −20 0 20 40 60 QUIESCENT CURRENT (mA) 0.60 0.35 −40 Vin = 5.0 V 0.40 −20 0 20 40 60 70 NCP170xxx360TyG Cin = Cout = 1 mF Iout = 0 Vout = 3.6 V Vin = 5.5 V Vin = 4.0 V 0.45 Vin = 5.0 V 0.40 0.35 −40 −20 0 20 40 60 80 Vin = 2.5 V NCP170xxx120TyG Cin = Cout = 1 mF TA = 25°C Vout = 1.2 V 60 50 Vin = 3.5 V 40 30 20 Vin = 5.5 V 10 0 80 0.01 0.1 1 10 100 TEMPERATURE (°C) OUTPUT CURRENT (mA) Figure 17. Quiescent Current vs. Temperature, Vout = 3.6 V Figure 18. Ground Current vs. Output Current, Vout = 1.2 V 80 80 NCP170xxx250TyG Cin = Cout = 1 mF TA = 25°C Vout = 2.5 V Vin = 3.5 V Vin = 4.5 V 50 40 30 20 Vin = 5.5 V NCP170xxx360TyG Cin = Cout = 1 mF TA = 25°C Vout = 3.6 V 70 GROUND CURRENT (mA) GROUND CURRENT (mA) Vin = 3.5 − 4.0 V 0.45 Figure 16. Quiescent Current vs. Temperature, Vout = 2.5 V 0.50 60 Vin = 4.6 V Vin = 5.0 V 50 40 30 Vin = 5.5 V 20 10 10 0 0.50 0.35 −40 80 Vin = 5.5 V Figure 15. Quiescent Current vs. Temperature, Vout = 1.2 V 0.55 60 0.55 TEMPERATURE (°C) 0.60 70 NCP170xxx250TyG Cin = Cout = 1 mF Iout = 0 Vout = 2.5 V 0.60 TEMPERATURE (°C) 0.65 QUIESCENT CURRENT (mA) 0.65 NCP170xxx120TyG Cin = Cout = 1 mF Iout = 0 Vout = 1.2 V GROUND CURRENT (mA) QUIESCENT CURRENT (mA) 0.65 0.01 0.1 1 10 0 100 0.01 0.1 1 10 100 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 19. Ground Current vs. Output Current, Vout = 2.5 V Figure 20. Ground Current vs. Output Current, Vout = 3.6 V www.onsemi.com 13 NCP170 TYPICAL CHARACTERISTICS 80 80 70 70 Iout = 1 mA 10 mA 100 mA PSRR (dB) PSRR (dB) 50 40 30 NCP170xxx120TyG 20 Cout = 1 mF Vin = 2.2 V+ 200 mVpp modulation 10 TA = 25°C Vout = 1.2 V 0 100 1k 10k 100k 1M 40 30 150 mA 100k 1M FREQUENCY (Hz) Figure 21. PSRR vs. Frequency, Vout = 1.2 V Figure 22. PSRR vs. Frequency, Vout = 1.8 V 70 Iout = 1 mA Iout = 1 mA 60 10 mA 50 PSRR (dB) 100 mA 50 40 30 NCP170xxx300TyG Cout = 1 mF Vin = 4.0 V+ 200 mVpp modulation TA = 25°C Vout = 3.0 V 20 10 100 1k 150 mA 10k 100k 1M 40 30 NCP170xxx360TyG 20 Cout = 1 mF Vin = 4.6 V+ 200 mVpp modulation 10 TA = 25°C Vout = 3.6 V 0 100 1k 10k 150 mA 100k FREQUENCY (Hz) Figure 23. PSRR vs. Frequency, Vout = 3.0 V Figure 24. PSRR vs. Frequency, Vout = 3.6 V 1.4 2.0 NCP170xxx120TyG Cin = Cout = 1 mF Vin = 5.5 V Vout = 1.2 V Iout = 1 mA TA = 25°C 1.2 1.0 0.8 0.6 0.4 0.2 0 10 mA 100 mA FREQUENCY (Hz) OUTPUT VOLTAGE NOISE SPECTRAL DENSITY (mV/√Hz) PSRR (dB) 10 mA 100 mA FREQUENCY (Hz) 60 OUTPUT VOLTAGE NOISE SPECTRAL DENSITY (mV/√Hz) 50 NCP170xxx180TyG 20 Cout = 1 mF Vin = 2.8 V+ 200 mVpp modulation 10 TA = 25°C Vout = 1.8 V 0 100 1k 10k 150 mA 70 0 Iout = 1 mA 60 60 10 100 1k 10k 100k 1M NCP170xxx180TyG Cin = Cout = 1 mF Vin = 5.5 V Vout = 1.8 V Iout = 1 mA TA = 25°C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure 25. Output Voltage Noise Spectral Density, Vout = 1.2 V Figure 26. Output Voltage Noise Spectral Density, Vout = 1.8 V www.onsemi.com 14 1M 1M NCP170 TYPICAL CHARACTERISTICS 4.0 NCP170xxx300TyG Cin = Cout = 1 mF Vin = 5.5 V Vout = 3.0 V Iout = 1 mA TA = 25°C 3.0 2.5 2.0 OUTPUT VOLTAGE NOISE SPECTRAL DENSITY (mV/√Hz) OUTPUT VOLTAGE NOISE SPECTRAL DENSITY (mV/√Hz) 3.5 1.5 1.0 0.5 0 10 100 1k 10k 100k 1M NCP170xxx360TyG Cin = Cout = 1 mF Vin = 5.5 V Vout = 3.6 V Iout = 1 mA TA = 25°C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure 27. Output Voltage Noise Spectral Density, Vout = 3.0 V Figure 28. Output Voltage Noise Spectral Density, Vout = 3.6 V www.onsemi.com 15 1M NCP170 TYPICAL CHARACTERISTICS Figure 29. Load Transient Response at Load Step from 1 mA to 50 mA, Vout = 1.2 V Figure 30. Load Transient Response at Load Step from 0.1 mA to 50 mA, Vout = 1.2 V Figure 31. Load Transient Response at Load Step from 0.1 mA to 10 mA, Vout = 1.2 V Figure 32. Load Transient Response at Load Step from 1 mA to 50 mA, Vout = 2.5 V Output Voltage Output Current Figure 33. Load Transient Response at Load Step from 0.1 mA to 50 mA, Vout = 2.5 V Figure 34. Load Transient Response at Load Step from 0.1 mA to 10 mA, Vout = 2.5 V www.onsemi.com 16 NCP170 TYPICAL CHARACTERISTICS Figure 35. Load Transient Response at Load Step from 1mA to 50 mA, Vout= 3.0 V Figure 36. Load Transient Response at Load Step from 0.1 mA to 50 mA, Vout = 3.0 V Figure 37. Load Transient Response at Load Step from 0.1 mA to 10 mA, Vout = 3.0 V Figure 38. Load Transient Response at Load Step from 1 mA to 50 mA, Vout = 3.6 V Figure 39. Load Transient Response at Load Step from 0.1 mA to 50 mA, Vout = 3.6 V Figure 40. Load Transient Response at Load Step from 0.1 mA to 10 mA, Vout = 3.6 V www.onsemi.com 17 NCP170 TYPICAL CHARACTERISTICS Figure 41. Output Voltage with and without Active Discharge Feature, Vout = 1.2 V Figure 42. Output Voltage with and without Active Discharge Feature, Vout = 2.5 V Figure 43. Output Voltage with and without Active Discharge Feature, Vout = 3.0 V Figure 44. Output Voltage with and without Active Discharge Feature, Vout = 3.6 V www.onsemi.com 18 NCP170 TYPICAL CHARACTERISTICS Figure 45. Enable Turn−on Response at Vout = 1.2 V Figure 46. Enable Turn−on Response at Vout = 1.8 V Figure 47. Enable Turn−on Response at Vout = 2.5 V Figure 48. Enable Turn−on Response at Vout = 3.6 V www.onsemi.com 19 NCP170 APPLICATIONS INFORMATION General available at output pin. In case the Enable function is not required the EN pin should be connected directly to input pin. The NCP170 is a high performance 150 mA Linear Regulator with Ultra Low IQ. This device delivers low Noise and high Power Supply Rejection Ratio with excellent dynamic performance due to employing the Dynamic Quiescent Current adjustment which assure ultra low IQ consumption at no – load state. These parameters make this device very suitable for various battery powered applications. Thermal Shutdown When the die temperature exceeds the Thermal Shutdown point (TSD = 175°C typical) the device goes to disabled state and the output voltage is not delivered until the die temperature decreases to 150°C. The Thermal Shutdown feature provides a protection from a catastrophic device failure at accidental overheating. This protection is not intended to be used as a substitute for proper heat sinking. Input Decoupling (CIN) It is recommended to connect at least a 1 mF Ceramic X5R or X7R capacitor between IN and GND pins of the device. This capacitor will provide a low impedance path for any unwanted AC signals or Noise superimposed onto constant Input Voltage. The good input capacitor will limit the influence of input trace inductances and source resistance during sudden load current changes. Higher capacitance and lower ESR Capacitors will improve the overall line transient response. Power Dissipation and Heat sinking The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. For reliable operation, junction temperature should be limited to +125°C. The maximum power dissipation the NCP170 device can handle is given by: Output Decoupling (COUT) The NCP170 does not require a minimum Equivalent Series Resistance (ESR) for the output capacitor. The device is designed to be stable with standard ceramics capacitors with values of 1.0 mF or greater up to 10 mF. The X5R and X7R types have the lowest capacitance variations over temperature thus they are recommended. There is recommended connect the output capacitor as close as possible to the output pin of the regulator. P D(MAX) + ƪTJ(MAX) * TAƫ R qJA (eq. 1) The power dissipated by the NCP170 device for given application conditions can be calculated from the following equations: P D [ V INǒI GND(I OUT)Ǔ ) I OUTǒV IN * V OUTǓ (eq. 2) or Enable Operation The NCP170 uses the EN pin to enable /disable its device and to activate /deactivate the active discharge function at devices with this feature. If the EN pin voltage is pulled below 0.4 V the device is guaranteed to be disable. The active discharge transistor at the devices with Active Discharge Feature is activated and the output voltage VOUT is pulled to GND through an internal circuitry with effective resistance about 100 ohms. If the EN pin voltage is higher than 1.2 V the device is guaranteed to be enabled. The internal active discharge circuitry is switched off and the desired output voltage is V IN(MAX) [ P D(MAX) ) ǒV OUT I OUT ) I GND I OUTǓ (eq. 3) Hints VIN and GND printed circuit board traces should be as wide as possible. When the impedance of these traces is high, there is a chance to pick up noise or cause the regulator to malfunction. Place external components, especially the output capacitor, as close as possible to the NCP170, and make traces as short as possible. www.onsemi.com 20 NCP170 ORDERING INFORMATION Device Nominal Output Voltage Marking NCP170AMX120TCG 1.2 AC NCP170AMX135TCG 1.35 AP NCP170AMX150TCG 1.5 AJ NCP170AMX170TCG 1.7 AT NCP170AMX180TAG 1.8 AD NCP170AMX180TCG 1.8 AD NCP170AMX190TCG 1.9 AL NCP170AMX250TCG 2.5 AE NCP170AMX280TAG 2.8 AF NCP170AMX280TCG 2.8 AF NCP170AMX285TCG 2.85 AK NCP170AMX300TAG 3.0 AA NCP170AMX300TCG 3.0 AA NCP170AMX310TCG 3.1 AN NCP170AMX320TCG 3.2 AQ NCP170AMX330TAG 3.3 AG NCP170AMX330TCG 3.3 AG NCP170AMX360TCG 3.6 AM NCP170BMX120TCG 1.2 2C NCP170BMX135TCG 1.35 2P NCP170BMX150TCG 1.5 2J NCP170BMX170TCG 1.7 2T NCP170BMX180TCG 1.8 2D NCP170BMX190TCG 1.9 2L NCP170BMX250TCG 2.5 2E NCP170BMX280TCG 2.8 2F NCP170BMX285TCG 2.85 2K NCP170BMX300TCG 3.0 2A NCP170BMX310TCG 3.1 2N NCP170BMX320TCG 3.2 2Q NCP170BMX330TCG 3.3 2G NCP170BMX360TCG 3.6 2M Active Discharge Package Shipping† XDFN4 1.0 × 1.0 (Pb-Free) 3000 / Tape & Reel Yes No www.onsemi.com 21 NCP170 ORDERING INFORMATION Device Nominal Output Voltage Marking NCP170AXV120T2G 1.2 AC NCP170AXV135T2G 1.35 AL NCP170AXV150T2G 1.5 AJ NCP170AXV180T2G 1.8 AD NCP170AXV190T2G 1.9 AM NCP170AXV210T2G 2.1 AK NCP170AXV250T2G 2.5 AE NCP170AXV280T2G 2.8 AF NCP170AXV300T2G 3.0 AA NCP170AXV310T2G 3.1 AN NCP170AXV330T2G 3.3 AH NCP170AXV360T2G 3.6 AG NCP170BXV120T2G 1.2 2C NCP170BXV135T2G 1.35 2L NCP170BXV150T2G 1.5 2J NCP170BXV180T2G 1.8 2D NCP170BXV190T2G 1.9 2M NCP170BXV250T2G 2.5 2E NCP170BXV280T2G 2.8 2F NCP170BXV300T2G 3.0 2A NCP170BXV310T2G 3.1 2N NCP170BXV330T2G 3.3 2H NCP170ASN120T2G 1.2 GCG NCP170ASN150T2G 1.5 GCH NCP170ASN180T2G 1.8 GCF NCP170ASN250T2G 2.5 GCE NCP170ASN280T2G 2.8 GCA NCP170ASN300T2G 3.0 GCC NCP170ASN330T2G 3.3 GCD Active Discharge Package Shipping† SOT−563 (Pb-Free) 4000 / Tape & Reel (Available Soon) TSOP−5 (Pb-Free) 3000 / Tape & Reel (Available Soon) Yes No Yes †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 22 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A ISSUE G 6 1 DATE 23 SEP 2015 SCALE 4:1 D −X− 5 6 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 4 E −Y− 3 b e DIM A b C D E e L HE HE C 5 PL 6 0.08 (0.003) M X Y STYLE 1: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 STYLE 2: PIN 1. EMITTER 1 2. EMITTER2 3. BASE 2 4. COLLECTOR 2 5. BASE 1 6. COLLECTOR 1 STYLE 3: PIN 1. CATHODE 1 2. CATHODE 1 3. ANODE/ANODE 2 4. CATHODE 2 5. CATHODE 2 6. ANODE/ANODE 1 STYLE 4: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR STYLE 5: PIN 1. CATHODE 2. CATHODE 3. ANODE 4. ANODE 5. CATHODE 6. CATHODE STYLE 6: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE STYLE 7: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. ANODE 6. CATHODE STYLE 8: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN STYLE 9: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 10: PIN 1. CATHODE 1 2. N/C 3. CATHODE 2 4. ANODE 2 5. N/C 6. ANODE 1 MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 GENERIC MARKING DIAGRAM* XX MG 1 XX = Specific Device Code M = Month Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: STATUS: 98AON11126D ON SEMICONDUCTOR STANDARD 1 © Semiconductor Components Industries, LLC, 2002 January, 2002 − Rev. 01O NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 SOT−563, 6 LEAD http://onsemi.com 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled exceptCase when stamped Outline Number: 483A “CONTROLLED COPY” in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98AON11126D PAGE 2 OF 2 ISSUE REVISION DATE A ADDED STYLE 5. REQ. BY D. BARLOW. 03 NOV 2003 B ADDED STYLE 6. REQ. BY M. ATANOVICH. 03 MAR 2004 C ADDED SYTLE 7. REQ. BY A. TAM. 19 MAR 2004 D ADDED STYLE 8 AND 9. REQ. K. VAN TYNE. 30 APR 2004 E ADDED NOM VALUES AND CHANGED DIMS TO INDUSTRY STANDARD. REQ. BY D. TRUHITTE 31 JAN 2005 F ADDED STYLE 10. REQ. BY M. DEWITT. 28 APR 2005 G REMOVED −01 FROM CASE CODE VARIANT. REQ. BY N. CALZADA. 23 SEP 2015 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. © Semiconductor Components Industries, LLC, 2015 September, 2015 − Rev. G Case Outline Number: 463A MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOP−5 CASE 483 ISSUE M 5 1 SCALE 2:1 DATE 17 MAY 2016 NOTE 5 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. D 5X 0.20 C A B 0.10 T M 2X 0.20 T 5 B 1 4 2 S 3 K B DETAIL Z G A A TOP VIEW DIM A B C D G H J K M S DETAIL Z J C 0.05 H C SIDE VIEW SEATING PLANE END VIEW GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 0.95 0.037 MILLIMETERS MIN MAX 2.85 3.15 1.35 1.65 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 1.9 0.074 5 5 XXXAYWG G 1 1 Analog 2.4 0.094 XXX = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package 1.0 0.039 XX MG G Discrete/Logic XX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 0.7 0.028 SCALE 10:1 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: STATUS: 98ARB18753C ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 TSOP−5 http://onsemi.com 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98ARB18753C PAGE 2 OF 2 ISSUE REVISION DATE O INITIATED NEW MECHANICAL OUTLINE #483. REQ BY WL CHIN/L. RENNICK. 28 OCT 1998 A UPDATE OUTLINE DRAWING TO CORRECT DIN “C” (SHOULD BE FROM TIP OF LID TO TOP OF PKG). DIM IN TABLE INCORRECTLY LISTED TO G, F TO H, H TO J, N TO L & R TO M. REQ BY F. PADILLA 13 NOV 1998 B CHANGE OF LEGAL ONWERSHIP FROM MOTOROLA TO ON SEMICONDUCTOR. REQ BY A. GARLINGTON 20 APR 2001 C ADDED NOTE “4”. REQ BY S. RIGGS 27 JUN 2003 D ADDED FOOTPRINT INFORMATION. UPDATED MARKING. REQ. BY D. JOERSZ 07 APR 2005 E CHANGED DEVICE MARKING FROM AWW TO AYW. REQ. BY J. MANES. 14 SEP 2005 F UPDATED DRAWINGS TO LATEST JEDEC STANDARDS. ADDED NOTE 5. REQ. BY T. GURNETT. 07 JUN 2006 G ADDED MARKING DIAGRAM FOR IC OPTION. REQ. BY J. MILLER. 21 FEB 2007 H CORRECTED MARKING DIAGRAM ERROR BY REVERSING ANALOG AND DISCRETE LABELS. REQ. BY GK SUA. 18 MAY 2007 J CHANGED NOTE 4. REQ. BY A. GARLINGTON. 13 MAR 2013 K REMOVED DIMENSION L AND ADDED DATUMS A AND B TO TOP VIEW. REQ. BY A. GARLINGTON. 19 APR 2013 L REMOVED −02 FROM CASE CODE VARIANT. REQ. BY N. CALZADA. 23 SEP 2015 M CHANGED DIMENSIONS A & B FROM BASIC TO MIN AND MAX VALUES. REQ. BY A. GARLINGTON. 17 MAY 2016 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. © Semiconductor Components Industries, LLC, 2016 May, 2016 − Rev. M Case Outline Number: 483 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS XDFN4 1.0x1.0, 0.65P CASE 711AJ ISSUE A 1 SCALE 4:1 DATE 13 NOV 2015 PIN ONE REFERENCE 0.05 C 2X 4X A B D ÏÏ ÏÏ E 4X DETAIL A 0.05 C 2X TOP VIEW (A3) 0.05 C A 0.05 C NOTE 4 A1 SIDE VIEW C SEATING PLANE e/2 DETAIL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 mm FROM THE TERMINAL TIPS. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. DIM A A1 A3 b b2 D D2 E e L L2 MILLIMETERS MIN MAX 0.33 0.43 0.00 0.05 0.10 REF 0.15 0.25 0.02 0.12 1.00 BSC 0.43 0.53 1.00 BSC 0.65 BSC 0.20 0.30 0.07 0.17 GENERIC MARKING DIAGRAM* e 1 b2 L2 4X 2 L XX M 1 D2 45 5 D2 4 XX = Specific Device Code M = Date Code 3 4X b 0.05 M C A B NOTE 3 BOTTOM VIEW *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. RECOMMENDED MOUNTING FOOTPRINT* 0.65 PITCH 2X 0.52 PACKAGE OUTLINE 4X 4X 0.11 4X 0.24 0.39 1.20 4X 0.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: 98AON67179E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed STATUS: ON SEMICONDUCTOR STANDARD versions are uncontrolled except when stamped “CONTROLLED COPY” in red. NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 Case Outline Number: http://onsemi.com XDFN4, 1.0X1.0, 0.65P DESCRIPTION: October, 2002 − Rev. 0 PAGE 1 OFXXX 2 1 DOCUMENT NUMBER: 98AON67179E PAGE 2 OF 2 ISSUE REVISION DATE O RELEASED FOR PRODUCTION. REQ. BY I. CAMBALIZA. 02 FEB 2012 A CORRECTED MARKING DIAGRAM TO TWO CHARACTERS. REQ. BY J. SUPINA. 13 NOV 2015 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. © Semiconductor Components Industries, LLC, 2015 November, 2015 − Rev. A Case Outline Number: 711AJ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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