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NCP170BXV190T2G

NCP170BXV190T2G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOT563

  • 描述:

    IC REG LIN 1.9V 150MA SOT563-6

  • 数据手册
  • 价格&库存
NCP170BXV190T2G 数据手册
LDO Regulator Ultra‐Low IQ, CMOS 150 mA NCP170 The NCP170 series of CMOS low dropout regulators are designed specifically for portable battery-powered applications which require ultra-low quiescent current. The ultra-low consumption of typ. 500 nA ensures long battery life and dynamic transient boost feature improves device transient response for wireless communication applications. The device is available in small 1 × 1 mm XDFN4, SOT-563 and TSOP-5 packages. Features • • • • • • • • • • • Operating Input Voltage Range: 2.2 V to 5.5 V Output Voltage Range: 1.2 V to 3.6 V (0.1 V Steps) Ultra-Low Quiescent Current Typ. 0.5 mA Low Dropout: 170 mV Typ. at 150 mA High Output Voltage Accuracy ±1% Stable with Ceramic Capacitors 1 mF Over-Current Protection Thermal Shutdown Protection NCP170A for Active Discharge Option Available in Small 1 × 1 mm XDFN4, SOT−563 and TSOP-5 Packages These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com 6 1 1 XDFN4 MX SUFFIX CASE 711AJ SOT−563 XV SUFFIX CASE 463A 5 1 TSOP−5 SN SUFFIX CASE 483 MARKING DIAGRAMS XDFN4 XX M 1 XX = Specific Device Code M = Date Code SOT−563 XX MG 1 XX = Specific Device Code M = Month Code G = Pb-Free Package Typical Applications • Battery Powered Equipments • Portable Communication Equipments • Cameras, Image Sensors and Camcorders *Pb-Free indicator, “G” or microdot “G”, may or may not be present. TSOP−5 VIN CIN IN 1 mF NCP170 VOUT OUT COUT EN 5 XXXAYWG G 1 mF 1 GND XXX = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Figure 1. Typical Application Schematic ORDERING INFORMATION See detailed ordering, marking and shipping information on page 22 of this data sheet. © Semiconductor Components Industries, LLC, 2017 December, 2020 − Rev. 23 1 Publication Order Number: NCP170/D NCP170 PIN FUNCTION DESCRIPTION Pin No. XDFN4 Pin No. SOT−563 Pin No. TSOP−5 Pin Name 4 1 1 IN 2 2 2 GND 3 6 3 EN 1 3 5 OUT Output Pin EPAD − − EPAD Internally Connected to GND − 4 4 NC − 5 − GND Description Power Supply Input Voltage Power Supply Ground Chip Enable Pin (Active “H”) No Connect Power Supply Ground ABSOLUTE MAXIMUM RATINGS Symbol VIN Rating Input Voltage (Note 1) VOUT Output Voltage VCE Chip Enable Input TJ(MAX) TSTG Maximum Junction Temperature Storage Temperature Value Unit 6.0 V −0.3 to VIN + 0.3 V −0.3 to 6.0 V 150 °C −55 to 150 °C ESDHBM ESD Capability, Human Body Model (Note 2) 2000 V ESDMM ESD Capability, Machine Model (Note 2) 200 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC-Q100-002 (EIA/JESD22-A114) ESD Machine Model tested per AEC-Q100-003 (EIA/JESD22-A115) Latchup Current Maximum Rating tested per JEDEC standard: JESD78 THERMAL CHARACTERISTICS Symbol RqJA Rating Value Thermal Characteristics, Thermal Resistance, Junction-to-Air XDFN4 1 × 1 mm SOT−563 TSOP−5 Figure 2. Simplified Block Diagram www.onsemi.com 2 250 200 250 Unit °C/W NCP170 ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 1.2 V (−40°C ≤ TJ ≤ 85°C; VIN = 2.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 3) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 − 5.5 V TA = +25°C 1.188 1.2 1.212 V −40°C ≤ TJ ≤ 85°C 1.176 1.2 1.224 Operating Input Voltage Output Voltage LineReg Line Regulation 2.5 V < VIN ≤ 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 2.5 V − 0.05 0.20 %/V −20 1 20 mV VDO Dropout Voltage (Note 4) − − − mV IOUT Output Current (Note 5) 150 − − mA ISC Short Circuit Current Limit VOUT = 0 V − 225 − mA IQ Quiescent Current IOUT = 0 mA − 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25°C − 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V EN Pin Current VEN ≤ VIN ≤ 5.5 V (Note 6) − 10 − nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 2.2 V + 200 mVpp Modulation IOUT = 150 mA IOUT = 10 mA − − 57 63 − − VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA, f = 100 Hz to 1 MHz, COUT = 1 mF − 85 − mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 6) − 100 − W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C (Note 6) − 175 − °C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 6) − 25 − °C IEN RLOW dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 4. Not Characterized at VIN = 2.2 V, VOUT = 1.2 V, IOUT = 150 mA. 5. Respect SOA. 6. Guaranteed by design and characterization. www.onsemi.com 3 NCP170 ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 1.5 V (−40°C ≤ TJ ≤ 85°C; VIN = 2.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 7) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 − 5.5 V TA = +25°C 1.485 1.5 1.515 V −40°C ≤ TJ ≤ 85°C 1.470 1.5 1.530 Operating Input Voltage Output Voltage LineReg Line Regulation 4.3 V < VIN ≤ 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 4.3 V − 0.05 0.20 %/V −20 − 20 mV VDO Dropout Voltage IOUT = 150 mA (Note 8) − − − mV IOUT Output Current (Note 9) 150 − − mA ISC Short Circuit Current Limit VOUT = 0 V − 225 − mA IQ Quiescent Current IOUT = 0 mA − 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25°C − 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V EN Pin Current VEN ≤ VIN ≤ 5.5 V (Note 10) − 10 − nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 2.5 V + 200 mVpp Modulation IOUT = 150 mA − 57 − VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA, f = 100 Hz to 1 MHz, COUT = 1 mF − 90 − mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 10) − 100 − W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C (Note 10) − 175 − °C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 10) − 25 − °C IEN RLOW dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 8. Not Characterized at VIN = 2.2 V, VOUT = 1.5 V, IOUT = 150 mA. 9. Respect SOA. 10. Guaranteed by design and characterization. www.onsemi.com 4 NCP170 ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 1.8 V (−40°C ≤ TJ ≤ 85°C; VIN = 2.8 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 11) Symbol VIN Parameter Test Conditions Min Typ Max Unit 2.2 − 5.5 V 2.0 − 5.5 TA = +25°C 1.782 1.8 1.818 −40°C ≤ TJ ≤ 85°C 1.764 1.8 1.836 − 0.05 0.20 %/V −20 1 20 mV − 350 480 mV 150 − − mA Operating Input Voltage IOUT < 30 mA VOUT Output Voltage V LineReg Line Regulation 2.8 V < VIN ≤ 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 2.8 V VDO Dropout Voltage IOUT = 150 mA (Note 12) IOUT Output Current (Note 13) ISC Short Circuit Current Limit VOUT = 0 V − 225 − mA IQ Quiescent Current IOUT = 0 mA − 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25°C − 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V EN Pull Down Current VEN ≤ VIN ≤ 5.5 V (Note 14) − 10 − nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 2.8 V + 200 mVpp Modulation IOUT = 150 mA − 57 − dB VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA f = 100 Hz to 1 MHz, COUT = 1 mF − 95 − mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 14) − 100 − W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C (Note 14) − 175 − °C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 14) − 25 − °C IEN RLOW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 11. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 12. Characterized when VOUT falls 54 mV below the regulated voltage and only for devices with VOUT = 1.8 V. 13. Respect SOA. 14. Guaranteed by design and characterization. www.onsemi.com 5 NCP170 ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 1.9 V (−40°C ≤ TJ ≤ 85°C; VIN = 2.9 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 15) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 − 5.5 V TA = +25°C 1.881 1.9 1.919 V −40°C ≤ TJ ≤ 85°C 1.862 1.9 1.938 Operating Input Voltage Output Voltage LineReg Line Regulation 3.5 V < VIN ≤ 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 3.5 V − 0.05 0.20 %/V −20 1 20 mV VDO Dropout Voltage IOUT = 150 mA (Note 16) − 335 460 mV IOUT Output Current (Note 17) 150 − − mA ISC Short Circuit Current Limit VOUT = 0 V − 225 − mA IQ Quiescent Current IOUT = 0 mA − 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25°C − 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V EN Pull Down Current VEN ≤ VIN ≤ 5.5 V (Note 18) − 10 − nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 3.5 V + 200 mVpp Modulation IOUT = 150 mA − 57 − dB VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA f = 100 Hz to 1 MHz, COUT = 1 mF − 100 − mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 18) − 100 − W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C (Note 18) − 175 − °C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 18) − 25 − °C IEN RLOW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 15. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 16. Characterized when VOUT falls 57 mV below the regulated voltage and only for devices with VOUT = 1.9 V. 17. Respect SOA. 18. Guaranteed by design and characterization. www.onsemi.com 6 NCP170 ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 2.5 V (−40°C ≤ TJ ≤ 85°C; VIN = 3.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 19) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 − 5.5 V TA = +25°C 2.475 2.5 2.525 V −40°C ≤ TJ ≤ 85°C 2.450 2.5 2.550 Operating Input Voltage Output Voltage LineReg Line Regulation 3.5 V < VIN ≤ 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 3.5 V − 0.05 0.20 %/V −20 1 20 mV VDO Dropout Voltage IOUT = 150 mA (Note 20) − 240 330 mV IOUT Output Current (Note 21) 150 − − mA ISC Short Circuit Current Limit VOUT = 0 V − 225 − mA IQ Quiescent Current IOUT = 0 mA − 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25°C − 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V EN Pull Down Current VEN ≤ VIN ≤ 5.5 V (Note 22) − 10 − nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 3.5 V + 200 mVpp Modulation IOUT = 150 mA − 57 − dB VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA f = 100 Hz to 1 MHz, COUT = 1 mF − 125 − mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 22) − 100 − W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C (Note 22) − 175 − °C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 22) − 25 − °C IEN RLOW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 19. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 20. Characterized when VOUT falls 75 mV below the regulated voltage and only for devices with VOUT = 2.5 V. 21. Respect SOA. 22. Guaranteed by design and characterization. www.onsemi.com 7 NCP170 ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 2.8 V (−40°C ≤ TJ ≤ 85°C; VIN = 3.8 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 23) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 − 5.5 V TA = +25°C 2.772 2.8 2.828 V −40°C ≤ TJ ≤ 85°C 2.744 2.8 2.856 Operating Input Voltage Output Voltage LineReg Line Regulation 3.8 V < VIN ≤ 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 3.8 V − 0.05 0.20 %/V −20 1 20 mV VDO Dropout Voltage IOUT = 150 mA (Note 24) − 210 300 mV IOUT Output Current (Note 25) 150 − − mA ISC Short Circuit Current Limit VOUT = 0 V − 195 − mA IQ Quiescent Current IOUT = 0 mA − 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25°C − 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V EN Pull Down Current VEN ≤ VIN ≤ 5.5 V (Note 26) − 10 − nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 3.8 V + 200 mVpp Modulation IOUT = 150 mA − 40 − dB VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA f = 100 Hz to 1 MHz, COUT = 1 mF − 125 − mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 26) − 100 − W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C (Note 26) − 175 − °C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 26) − 25 − °C IEN RLOW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 23. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 24. Characterized when VOUT falls 84 mV below the regulated voltage and only for devices with VOUT = 2.8 V. 25. Respect SOA. 26. Guaranteed by design and characterization. www.onsemi.com 8 NCP170 ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 3.0 V (−40°C ≤ TJ ≤ 85°C; VIN = 4.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 27) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 − 5.5 V TA = +25°C 2.97 3.0 3.03 V −40°C ≤ TJ ≤ 85°C 2.94 3.0 3.06 Operating Input Voltage Output Voltage LineReg Line Regulation 4.0 V < VIN ≤ 5.5 V, IOUT = 1 mA − 0.05 0.20 %/V LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 4 V −20 1 20 mV VDO Dropout Voltage IOUT = 150 mA (Note 28) − 190 260 mV IOUT Output Current (Note 29) 150 − − mA ISC Short Circuit Current Limit VOUT = 0 V − 195 − mA IQ Quiescent Current IOUT = 0 mA − 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25°C − 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V EN Pull Down Current VEN ≤ VIN ≤ 5.5 V (Note 30) − 10 − nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 4.0 V + 200 mVpp Modulation IOUT = 150 mA − 47 − dB VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA f = 100 Hz to 1 MHz, COUT = 1 mF − 120 − mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 30) − 100 − W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C (Note 30) − 175 − °C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 30) − 25 − °C IEN RLOW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 27. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 28. Characterized when VOUT falls 90 mV below the regulated voltage and only for devices with VOUT = 3.0 V. 29. Respect SOA. 30. Guaranteed by design and characterization. www.onsemi.com 9 NCP170 ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 3.3 V (−40°C ≤ TJ ≤ 85°C; VIN = 4.3 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 31) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 − 5.5 V TA = +25°C 3.267 3.3 3.333 V −40°C ≤ TJ ≤ 85°C 3.234 3.3 3.366 Operating Input Voltage Output Voltage LineReg Line Regulation 4.3 V < VIN ≤ 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 4.3 V − 0.05 0.20 %/V −20 1 20 mV VDO Dropout Voltage IOUT = 150 mA (Note 32) − 180 250 mV IOUT Output Current (Note 33) 150 − − mA ISC Short Circuit Current Limit VOUT = 0 V − 195 − mA IQ Quiescent Current IOUT = 0 mA − 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25°C − 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V EN Pull Down Current VEN ≤ VIN ≤ 5.5 V (Note 34) − 10 − nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 4.3 V + 200 mVpp Modulation IOUT = 150 mA − 41 − dB VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA f = 100 Hz to 1 MHz, COUT = 1 mF − 125 − mVrms Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 34) − 100 − W TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C (Note 34) − 175 − °C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 34) − 25 − °C IEN RLOW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 31. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 32. Characterized when VOUT falls 99 mV below the regulated voltage and only for devices with VOUT = 3.3 V. 33. Respect SOA. 34. Guaranteed by design and characterization. www.onsemi.com 10 NCP170 ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 3.6 V (−40°C ≤ TJ ≤ 85°C; VIN = 4.6 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C.) (Note 35) Symbol VIN VOUT Parameter Test Conditions Min Typ Max Unit 2.2 − 5.5 V TA = +25°C 3.564 3.6 3.636 V −40°C ≤ TJ ≤ 85°C 3.528 3.6 3.672 − 0.05 0.20 %/V −20 1 20 mV − 170 240 mV 150 − − mA Operating Input Voltage Output Voltage LineReg Line Regulation 4.6 V < VIN ≤ 5.5 V, IOUT = 1 mA LoadReg Load Regulation 0 mA < IOUT ≤ 150 mA, VIN = 4.6 V VDO Dropout Voltage IOUT = 150 mA (Note 36) IOUT Output Current (Note 37) ISC Short Circuit Current Limit VOUT = 0 V − 195 − mA IQ Quiescent Current IOUT = 0 mA − 0.5 0.9 mA ISTB Standby Current VEN = 0 V, TJ = 25°C − 0.1 0.5 mA VENH EN Pin Threshold Voltage EN Input Voltage “H” 1.2 − − V VENL EN Pin Threshold Voltage EN Input Voltage “L” − − 0.4 V EN Pull Down Current VEN ≤ VIN ≤ 5.5 V (Note 38) − 10 − nA PSRR Power Supply Rejection Ratio f = 1 kHz, VIN = 4.6 V + 200 mVpp Modulation IOUT = 150 mA − 30 − dB VNOISE Output Noise Voltage VIN = 5.5 V, IOUT = 1 mA f = 100 Hz to 1 MHz, COUT = 1 mF − 130 − mVrms RLOW Active Output Discharge Resistance (A option only) VIN = 5.5 V, VEN = 0 V (Note 34) − 100 − TSD Thermal Shutdown Temperature Temperature Increasing from TJ = +25°C (Note 38) − 175 − °C TSDH Thermal Shutdown Hysteresis Temperature Falling from TSD (Note 38) − 25 − °C IEN Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 35. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 36. Characterized when VOUT falls 108 mV below the regulated voltage and only for devices with VOUT = 3.6 V. 37. Respect SOA. 38. Guaranteed by design and characterization. www.onsemi.com 11 NCP170 TYPICAL CHARACTERISTICS 1.802 1.202 Vin = 5.5 V Vin = 3.0 V 1.198 Vin = 2.2 V 1.196 1.798 Vin = 3.5 V 1.794 NCP170xxx120TyG Cin = Cout = 1 mF Iout = 1 mA 1.192 1.190 −40 −20 0 20 40 NCP170xxx180TyG Cin = Cout = 1 mF Iout = 1 mA 1.792 60 1.790 −40 80 −20 0 20 40 60 80 TEMPERATURE (°C) TEMPERATURE (°C) Figure 3. Output Voltage vs. Temperature, Vout = 1.2 V Figure 4. Output Voltage vs. Temperature, Vout = 1.8 V 3.008 3.604 Vin = 5.5 V 3.000 Vin = 3.3 − 4.5 V 2.996 Vin = 5.0 V 2.992 NCP170xxx300TyG Cin = Cout = 1 mF Iout = 1 mA 2.988 2.984 −40 −20 0 20 40 60 Vin = 5.5 V 3.600 OUTPUT VOLTAGE (V) 3.004 OUTPUT VOLTAGE (V) Vin = 2.8 V 1.796 1.194 3.596 Vin = 3.8 − 4.5 V Vin = 5.0 V 3.592 3.588 NCP170xxx360TyG Cin = Cout = 1 mF Iout = 1 mA 3.584 3.580 −40 80 −20 0 20 40 60 80 TEMPERATURE (°C) TEMPERATURE (°C) Figure 5. Output Voltage vs. Temperature, Vout = 3.0 V Figure 6. Output Voltage vs. Temperature, Vout = 3.6 V 1.200 1.802 Vin = 2.5 V 1.198 Vin = 3.0 V 1.197 Vin = 4.0 V 1.196 NCP170xxx120TyG Cin = Cout = 1 mF TA = 25°C 1.195 0 20 40 60 Vin = 5.5 V 80 100 120 OUTPUT VOLTAGE (V) 1.800 OUTPUT VOLTAGE (V) 1.199 1.194 Vin = 5.5 V 1.800 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 1.200 Vin = 2.8 V 1.798 Vin = 4.0 V 1.796 Vin = 4.5 V 1.794 NCP170xxx180TyG Cin = Cout = 1 mF TA = 25°C 1.792 1.790 140 0 20 40 60 Vin = 5.5 V 80 100 120 140 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 7. Output Voltage vs. Output Current, Vout = 1.2 V Figure 8. Output Voltage vs. Output Current, Vout = 1.8 V www.onsemi.com 12 NCP170 TYPICAL CHARACTERISTICS 3.002 3.599 3.000 Vin = 4.5 V 2.999 Vin = 5.0 V 2.998 NCP170xxx300TyG Cin = Cout = 1 mF TA = 25°C 2.997 2.996 0 450 40 60 3.597 3.596 Vin = 4.6 V 3.595 Vin = 5.5 V 80 100 120 3.593 140 40 60 80 100 120 140 Figure 10. Output Voltage vs. Output Current, Vout = 3.6 V 300 TA = 85°C 250 TA = −40°C 200 150 100 50 20 40 60 80 100 120 NCP170xxx250TyG Cin = Cout = 1 mF 250 TA = 85°C TA = 25°C 200 150 TA = −40°C 100 50 0 140 0 20 40 60 80 100 120 140 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 11. Dropout Voltage vs. Output Current, Vout = 1.8 V Figure 12. Dropout Voltage vs. Output Current, Vout = 2.5 V 200 250 NCP170xxx300TyG Cin = Cout = 1 mF 200 TA = 85°C TA = 25°C 150 TA = −40°C 100 50 0 20 40 60 80 100 120 DROPOUT VOLTAGE (mV) DROPOUT VOLTAGE (mV) 20 Figure 9. Output Voltage vs. Output Current, Vout = 3.0 V 300 0 0 Vin = 5.5 V OUTPUT CURRENT (mA) TA = 25°C 0 Vin = 5.0 V NCP170xxx360TyG Cin = Cout = 1 mF TA = 25°C OUTPUT CURRENT (mA) 350 0 Vin = 4.3 V 3.594 NCP170xxx180TyG Cin = Cout = 1 mF 400 DROPOUT VOLTAGE (mV) 20 3.598 OUTPUT VOLTAGE (V) Vin = 4.0 V DROPOUT VOLTAGE (mV) OUTPUT VOLTAGE (V) 3.001 TA = 25°C 150 125 100 TA = −40°C 75 50 25 0 140 TA = 85°C NCP170xxx360TyG Cin = Cout = 1 mF 175 0 20 40 60 80 100 120 140 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 13. Dropout Voltage vs. Output Current, Vout = 3.0 V Figure 14. Dropout Voltage vs. Output Current, Vout = 3.6 V www.onsemi.com 13 NCP170 TYPICAL CHARACTERISTICS 0.55 Vin = 5.5 V 0.50 Vin = 2.5 − 4.0 V 0.45 0.40 Vin = 5.0 V −20 0 20 40 60 QUIESCENT CURRENT (mA) 0.60 0.35 −40 Vin = 5.0 V 0.40 −20 0 20 40 60 70 NCP170xxx360TyG Cin = Cout = 1 mF Iout = 0 Vout = 3.6 V Vin = 5.5 V Vin = 4.0 V 0.45 Vin = 5.0 V 0.40 0.35 −40 −20 0 20 40 60 80 Vin = 2.5 V NCP170xxx120TyG Cin = Cout = 1 mF TA = 25°C Vout = 1.2 V 60 50 Vin = 3.5 V 40 30 20 Vin = 5.5 V 10 0 80 0.01 0.1 1 10 100 TEMPERATURE (°C) OUTPUT CURRENT (mA) Figure 17. Quiescent Current vs. Temperature, Vout = 3.6 V Figure 18. Ground Current vs. Output Current, Vout = 1.2 V 80 80 NCP170xxx250TyG Cin = Cout = 1 mF TA = 25°C Vout = 2.5 V Vin = 3.5 V Vin = 4.5 V 50 40 30 20 Vin = 5.5 V NCP170xxx360TyG Cin = Cout = 1 mF TA = 25°C Vout = 3.6 V 70 GROUND CURRENT (mA) GROUND CURRENT (mA) Vin = 3.5 − 4.0 V 0.45 Figure 16. Quiescent Current vs. Temperature, Vout = 2.5 V 0.50 60 Vin = 4.6 V Vin = 5.0 V 50 40 30 Vin = 5.5 V 20 10 10 0 0.50 0.35 −40 80 Vin = 5.5 V Figure 15. Quiescent Current vs. Temperature, Vout = 1.2 V 0.55 60 0.55 TEMPERATURE (°C) 0.60 70 NCP170xxx250TyG Cin = Cout = 1 mF Iout = 0 Vout = 2.5 V 0.60 TEMPERATURE (°C) 0.65 QUIESCENT CURRENT (mA) 0.65 NCP170xxx120TyG Cin = Cout = 1 mF Iout = 0 Vout = 1.2 V GROUND CURRENT (mA) QUIESCENT CURRENT (mA) 0.65 0.01 0.1 1 10 0 100 0.01 0.1 1 10 100 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 19. Ground Current vs. Output Current, Vout = 2.5 V Figure 20. Ground Current vs. Output Current, Vout = 3.6 V www.onsemi.com 14 NCP170 TYPICAL CHARACTERISTICS 80 80 70 70 Iout = 1 mA 10 mA 100 mA PSRR (dB) PSRR (dB) 50 40 30 NCP170xxx120TyG 20 Cout = 1 mF Vin = 2.2 V+ 200 mVpp modulation 10 TA = 25°C Vout = 1.2 V 0 100 1k 10k 100k 1M 40 30 150 mA 100k 1M FREQUENCY (Hz) Figure 21. PSRR vs. Frequency, Vout = 1.2 V Figure 22. PSRR vs. Frequency, Vout = 1.8 V 70 Iout = 1 mA Iout = 1 mA 60 10 mA 50 PSRR (dB) 100 mA 50 40 30 NCP170xxx300TyG Cout = 1 mF Vin = 4.0 V+ 200 mVpp modulation TA = 25°C Vout = 3.0 V 20 10 100 1k 150 mA 10k 100k 1M 40 30 NCP170xxx360TyG 20 Cout = 1 mF Vin = 4.6 V+ 200 mVpp modulation 10 TA = 25°C Vout = 3.6 V 0 100 1k 10k 150 mA 100k FREQUENCY (Hz) Figure 23. PSRR vs. Frequency, Vout = 3.0 V Figure 24. PSRR vs. Frequency, Vout = 3.6 V 1.4 2.0 NCP170xxx120TyG Cin = Cout = 1 mF Vin = 5.5 V Vout = 1.2 V Iout = 1 mA TA = 25°C 1.2 1.0 0.8 0.6 0.4 0.2 0 10 mA 100 mA FREQUENCY (Hz) OUTPUT VOLTAGE NOISE SPECTRAL DENSITY (mV/√Hz) PSRR (dB) 10 mA 100 mA FREQUENCY (Hz) 60 OUTPUT VOLTAGE NOISE SPECTRAL DENSITY (mV/√Hz) 50 NCP170xxx180TyG 20 Cout = 1 mF Vin = 2.8 V+ 200 mVpp modulation 10 TA = 25°C Vout = 1.8 V 0 100 1k 10k 150 mA 70 0 Iout = 1 mA 60 60 10 100 1k 10k 100k 1M NCP170xxx180TyG Cin = Cout = 1 mF Vin = 5.5 V Vout = 1.8 V Iout = 1 mA TA = 25°C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure 25. Output Voltage Noise Spectral Density, Vout = 1.2 V Figure 26. Output Voltage Noise Spectral Density, Vout = 1.8 V www.onsemi.com 15 1M 1M NCP170 TYPICAL CHARACTERISTICS 4.0 NCP170xxx300TyG Cin = Cout = 1 mF Vin = 5.5 V Vout = 3.0 V Iout = 1 mA TA = 25°C 3.0 2.5 2.0 OUTPUT VOLTAGE NOISE SPECTRAL DENSITY (mV/√Hz) OUTPUT VOLTAGE NOISE SPECTRAL DENSITY (mV/√Hz) 3.5 1.5 1.0 0.5 0 10 100 1k 10k 100k 1M NCP170xxx360TyG Cin = Cout = 1 mF Vin = 5.5 V Vout = 3.6 V Iout = 1 mA TA = 25°C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure 27. Output Voltage Noise Spectral Density, Vout = 3.0 V Figure 28. Output Voltage Noise Spectral Density, Vout = 3.6 V www.onsemi.com 16 1M NCP170 TYPICAL CHARACTERISTICS Figure 29. Load Transient Response at Load Step from 1 mA to 50 mA, Vout = 1.2 V Figure 30. Load Transient Response at Load Step from 0.1 mA to 50 mA, Vout = 1.2 V Figure 31. Load Transient Response at Load Step from 0.1 mA to 10 mA, Vout = 1.2 V Figure 32. Load Transient Response at Load Step from 1 mA to 50 mA, Vout = 2.5 V Output Voltage Output Current Figure 33. Load Transient Response at Load Step from 0.1 mA to 50 mA, Vout = 2.5 V Figure 34. Load Transient Response at Load Step from 0.1 mA to 10 mA, Vout = 2.5 V www.onsemi.com 17 NCP170 TYPICAL CHARACTERISTICS Figure 35. Load Transient Response at Load Step from 1mA to 50 mA, Vout= 3.0 V Figure 36. Load Transient Response at Load Step from 0.1 mA to 50 mA, Vout = 3.0 V Figure 37. Load Transient Response at Load Step from 0.1 mA to 10 mA, Vout = 3.0 V Figure 38. Load Transient Response at Load Step from 1 mA to 50 mA, Vout = 3.6 V Figure 39. Load Transient Response at Load Step from 0.1 mA to 50 mA, Vout = 3.6 V Figure 40. Load Transient Response at Load Step from 0.1 mA to 10 mA, Vout = 3.6 V www.onsemi.com 18 NCP170 TYPICAL CHARACTERISTICS Figure 41. Output Voltage with and without Active Discharge Feature, Vout = 1.2 V Figure 42. Output Voltage with and without Active Discharge Feature, Vout = 2.5 V Figure 43. Output Voltage with and without Active Discharge Feature, Vout = 3.0 V Figure 44. Output Voltage with and without Active Discharge Feature, Vout = 3.6 V www.onsemi.com 19 NCP170 TYPICAL CHARACTERISTICS Figure 45. Enable Turn−on Response at Vout = 1.2 V Figure 46. Enable Turn−on Response at Vout = 1.8 V Figure 47. Enable Turn−on Response at Vout = 2.5 V Figure 48. Enable Turn−on Response at Vout = 3.6 V www.onsemi.com 20 NCP170 APPLICATIONS INFORMATION General available at output pin. In case the Enable function is not required the EN pin should be connected directly to input pin. The NCP170 is a high performance 150 mA Linear Regulator with Ultra Low IQ. This device delivers low Noise and high Power Supply Rejection Ratio with excellent dynamic performance due to employing the Dynamic Quiescent Current adjustment which assure ultra low IQ consumption at no – load state. These parameters make this device very suitable for various battery powered applications. Thermal Shutdown When the die temperature exceeds the Thermal Shutdown point (TSD = 175°C typical) the device goes to disabled state and the output voltage is not delivered until the die temperature decreases to 150°C. The Thermal Shutdown feature provides a protection from a catastrophic device failure at accidental overheating. This protection is not intended to be used as a substitute for proper heat sinking. Input Decoupling (CIN) It is recommended to connect at least a 1 mF Ceramic X5R or X7R capacitor between IN and GND pins of the device. This capacitor will provide a low impedance path for any unwanted AC signals or Noise superimposed onto constant Input Voltage. The good input capacitor will limit the influence of input trace inductances and source resistance during sudden load current changes. Higher capacitance and lower ESR Capacitors will improve the overall line transient response. Power Dissipation and Heat sinking The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. For reliable operation, junction temperature should be limited to +125°C. The maximum power dissipation the NCP170 device can handle is given by: Output Decoupling (COUT) The NCP170 does not require a minimum Equivalent Series Resistance (ESR) for the output capacitor. The device is designed to be stable with standard ceramics capacitors with values of 1.0 mF or greater up to 10 mF. The X5R and X7R types have the lowest capacitance variations over temperature thus they are recommended. There is recommended connect the output capacitor as close as possible to the output pin of the regulator. P D(MAX) + ƪTJ(MAX) * TAƫ R qJA (eq. 1) The power dissipated by the NCP170 device for given application conditions can be calculated from the following equations: P D [ V INǒI GND(I OUT)Ǔ ) I OUTǒV IN * V OUTǓ (eq. 2) or Enable Operation The NCP170 uses the EN pin to enable /disable its device and to activate /deactivate the active discharge function at devices with this feature. If the EN pin voltage is pulled below 0.4 V the device is guaranteed to be disable. The active discharge transistor at the devices with Active Discharge Feature is activated and the output voltage VOUT is pulled to GND through an internal circuitry with effective resistance about 100 ohms. If the EN pin voltage is higher than 1.2 V the device is guaranteed to be enabled. The internal active discharge circuitry is switched off and the desired output voltage is V IN(MAX) [ P D(MAX) ) ǒV OUT I OUT ) I GND I OUTǓ (eq. 3) Hints VIN and GND printed circuit board traces should be as wide as possible. When the impedance of these traces is high, there is a chance to pick up noise or cause the regulator to malfunction. Place external components, especially the output capacitor, as close as possible to the NCP170, and make traces as short as possible. www.onsemi.com 21 NCP170 ORDERING INFORMATION Device Nominal Output Voltage Marking NCP170AMX120TCG 1.2 AC NCP170AMX129TCG 1.29 AV NCP170AMX135TCG 1.35 AP NCP170AMX150TCG 1.5 AJ NCP170AMX170TCG 1.7 AT NCP170AMX180TBG 1.8 AD NCP170AMX180TCG 1.8 AD NCP170AMX190TCG 1.9 AL NCP170AMX250TCG 2.5 AE NCP170AMX280TBG 2.8 AF NCP170AMX280TCG 2.8 AF NCP170AMX285TCG 2.85 AK NCP170AMX300TBG 3.0 AA NCP170AMX300TCG 3.0 AA NCP170AMX310TCG 3.1 AN NCP170AMX320TCG 3.2 AQ NCP170AMX330TBG 3.3 AG NCP170AMX330TCG 3.3 AG NCP170AMX360TCG 3.6 AM NCP170BMX120TCG 1.2 2C NCP170BMX135TCG 1.35 2P NCP170BMX150TCG 1.5 2J NCP170BMX170TCG 1.7 2T NCP170BMX180TCG 1.8 2D NCP170BMX190TCG 1.9 2L NCP170BMX250TCG 2.5 2E NCP170BMX280TCG 2.8 2F NCP170BMX285TCG 2.85 2K NCP170BMX300TCG 3.0 2A NCP170BMX310TCG 3.1 2N NCP170BMX320TCG 3.2 2Q NCP170BMX330TCG 3.3 2G NCP170BMX360TCG 3.6 2M Active Discharge Package Shipping† XDFN4 1.0 × 1.0 (Pb-Free) 3000 / Tape & Reel Yes No www.onsemi.com 22 NCP170 ORDERING INFORMATION Device Nominal Output Voltage Marking NCP170AXV120T2G 1.2 AC NCP170AXV135T2G 1.35 AL NCP170AXV150T2G 1.5 AJ NCP170AXV180T2G 1.8 AD NCP170AXV190T2G 1.9 AM NCP170AXV210T2G 2.1 AK NCP170AXV250T2G 2.5 AE NCP170AXV280T2G 2.8 AF NCP170AXV300T2G 3.0 AA NCP170AXV310T2G 3.1 AN NCP170AXV330T2G 3.3 AH NCP170AXV360T2G 3.6 AG NCP170BXV120T2G 1.2 2C NCP170BXV135T2G 1.35 2L NCP170BXV150T2G 1.5 2J NCP170BXV180T2G 1.8 2D NCP170BXV190T2G 1.9 2M NCP170BXV250T2G 2.5 2E NCP170BXV280T2G 2.8 2F NCP170BXV300T2G 3.0 2A NCP170BXV310T2G 3.1 2N NCP170BXV330T2G 3.3 2H NCP170ASN120T2G 1.2 GCG NCP170ASN129T2G 1.29 GCJ NCP170ASN150T2G 1.5 GCH NCP170ASN180T2G 1.8 GCF NCP170ASN250T2G 2.5 GCE NCP170ASN280T2G 2.8 GCA NCP170ASN300T2G 3.0 GCC NCP170ASN330T2G 3.3 GCD Active Discharge Package Shipping† SOT−563 (Pb-Free) 4000 / Tape & Reel (Available Soon) TSOP−5 (Pb-Free) 3000 / Tape & Reel (Available Soon) Yes No Yes †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 23 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A ISSUE H 6 1 SCALE 4:1 DOCUMENT NUMBER: DESCRIPTION: 98AON11126D SOT−563, 6 LEAD DATE 26 JAN 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOT−563, 6 LEAD CASE 463A ISSUE H DATE 26 JAN 2021 GENERIC MARKING DIAGRAM* XX MG 1 XX = Specific Device Code M = Month Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON11126D SOT−563, 6 LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOP−5 CASE 483 ISSUE N 5 1 SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. D 5X NOTE 5 2X DATE 12 AUG 2020 0.20 C A B 0.10 T M 2X 0.20 T 5 B 1 4 2 B S 3 K DETAIL Z G A A TOP VIEW DIM A B C D G H J K M S DETAIL Z J C 0.05 H C SIDE VIEW SEATING PLANE END VIEW GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 0.95 0.037 MILLIMETERS MIN MAX 2.85 3.15 1.35 1.65 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 1.9 0.074 5 5 XXXAYWG G 1 1 Analog 2.4 0.094 XXX = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package 1.0 0.039 XXX MG G Discrete/Logic XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ARB18753C TSOP−5 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS XDFN4 1.0x1.0, 0.65P CASE 711AJ ISSUE B 1 SCALE 4:1 GENERIC MARKING DIAGRAM* XX M 1 DOCUMENT NUMBER: DESCRIPTION: XX = Specific Device Code M = Date Code 98AON67179E XDFN4, 1.0X1.0, 0.65P DATE 25 JUN 2021 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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