NCP176AMX120TCG

DATA SHEET www.onsemi.com LDO Regulator - Fast Transient Response, Low Voltage XDFN6 MX SUFFIX CASE 711AT 500 mA The NCP176 is CMOS LDO regulator featuring 500 mA output current. The input voltage is as low as 1.4 V and the output voltage can be set from 0.7 V. Features • • • • • • • • • • • • Operating Input Voltage Range: 1.4 V to 5.5 V Output Voltage Range: 0.7 to 3.6 V (0.1 V steps) Quiescent Current typ. 60 mA Low Dropout: 130 mV typ. at 500 mA, VOUT = 2.5 V High Output Voltage Accuracy ±0.8% (VOUT > 1.8 V) Stable with Small 1 mF Ceramic Capacitors Over−current Protection Built−in Soft Start Circuit to Suppress Inrush Current Thermal Shutdown Protection: 165°C With (NCP176A) and Without (NCP176B) Output Discharge Function Available in XDFN6 1.2 mm x 1.2 mm x 0.4 mm Package These are Pb−free Devices PIN CONNECTIONS OUT 1 FB 2 GND 3 GND NCP176 6 IN 5 N/C 4 EN XDFN6 (Top View) MARKING DIAGRAM XX M XX = Specific Device Code M = Date Code ORDERING INFORMATION See detailed ordering and shipping information in the ordering information section on page 11 of this data sheet. Typical Applications • Battery Powered Equipment • Portable Communication Equipment • Cameras, Image Sensors and Camcorders VIN CIN 1 mF IN OUT COUT 1 mF NCP176 ON EN GND VOUT FB OFF Figure 1. Typical Application Schematic © Semiconductor Components Industries, LLC, 2015 September, 2022 − Rev. 7 1 Publication Order Number: NCP176/D NCP176 IN OUT IN OUT PROG . VOLTAGE REFERENCE AND SOFT − START PROG . VOLTAGE REFERENCE AND SOFT − START FB/ADJ FB/ADJ EN EN 0.7 V 0.7 V THERMAL SHUTDOWN THERMAL SHUTDOWN GND NCP176A (with output active discharge) GND NCP176B (without output active discharge) Figure 2. Internal Block Diagram Table 1. PIN FUNCTION DESCRIPTION Pin No. XDFN6 Pin Name 1 OUT LDO output pin 2 FB Feedback input pin 3 GND Ground pin 4 EN Chip enable input pin (active “H”) 5 N/C Not internally connected. This pin can be tied to the ground plane to improve thermal dissipation. 6 IN Power supply input pin EPAD EPAD It is recommended to connect the EPAD to GND, but leaving it open is also acceptable Description Table 2. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit IN −0.3 to 6.0 V OUT −0.3 to VIN + 0.3 V Chip Enable Input EN −0.3 to 6.0 V Output Current IOUT Internally Limited mA TJ(MAX) 150 °C Input Voltage (Note 1) Output Voltage Maximum Junction Temperature Storage Temperature TSTG −55 to 150 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115) Latchup Current Maximum Rating tested per JEDEC standard: JESD78 Table 3. THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction−to−Air, XDFN6 1.2 mm x 1.2 mm (Note 3) Symbol Value Unit RqJA 123 °C/W 3. Measured according to JEDEC board specification. Detailed description of the board can be found in JESD51−7. www.onsemi.com 2 NCP176 Table 4. ELECTRICAL CHARACTERISTICS − devices with VOUT−NOM < 1.8 V VIN = VOUT−NOM + 0.5 V and VIN ≥ 1.6 V, VEN = 1.2 V, IOUT = 1 mA, CIN = COUT = 1.0 mF, TJ = 25°C. The specifications in bold are guaranteed at −40°C ≤ TJ ≤ 85°C. (Note 4) Parameter Test Conditions Input Voltage Output Voltage TJ = +25°C Symbol Min Max Unit VIN 1.4 5.5 V VOUT −18 +18 mV −55 +50 −40°C ≤ TJ ≤ 85°C Typ Line Regulation VIN = VOUT−NOM + 0.5 V to 5.25 V VIN ≥ 1.4 V LineReg 0.02 0.1 %/V Load Regulation 1 mA ≤ IOUT ≤ 500 mA VIN = VOUT−NOM + 0.5 V and VIN ≥ 1.8 V LoadReg 1 5.0 mV 1 mA ≤ IOUT ≤ 400 mA VIN = VOUT−NOM + 0.5 V and VIN ≥ 1.7 V 1 5.0 1 mA ≤ IOUT ≤ 300 mA VIN = VOUT−NOM + 0.5 V and VIN ≥ 1.6 V 1 5.0 VDO 295 380 mV IOUT = 0 mA IQ 60 90 mA VEN = 0 V ISTBY 0.05 1 VOUT = VOUT−NOM − 100 mV VIN = VOUT−NOM + 0.5 V and VIN ≥ 1.8 V IOUT Dropout Voltage (Note 5) Quiescent Current Standby Current Output Current Limit Short Circuit Current Enable Threshold Voltage Enable Input Current Power Supply Rejection Ratio Output Noise Output Discharge Resistance (NCP176A option only) IOUT = 500 mA 1.4 V ≤ VOUT < 1.8 V VOUT = VOUT−NOM − 100 mV VIN = VOUT−NOM + 0.5 V and VIN ≥ 1.7 V 400 VOUT = VOUT−NOM − 100 mV VIN = VOUT−NOM + 0.5 V and VIN ≥ 1.6 V 300 mA mA 500 VOUT = 0 V VIN = VOUT−NOM + 0.5 V and VIN ≥ 1.8 V ISC 550 EN Input Voltage “H” VENH 1.0 EN Input Voltage “L” VENL VEN = VIN = 5.5 V IEN 0.15 f = 1 kHz, Ripple 0.2 Vp−p, VIN = VOUT−NOM + 1.0 V, IOUT = 30 mA (VOUT ≤ 2.0V, VIN = 3.0 V) PSRR 75 dB 40x VOUT−NOM mVRMS f = 10 Hz to 100 kHz 750 mA V 0.4 0.6 mA VIN = 4.0 V, VEN = 0 V, VOUT = VOUT−NOM RACTDIS 60 W Thermal Shutdown Temperature Temperature rising from TJ = +25°C TSD 165 °C Thermal Shutdown Hysteresis Temperature falling from TSD TSDH 20 °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C. Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible. 5. Measured when the output voltage falls −3% below the nominal output voltage (voltage measured under the condition VIN = VOUT−NOM + 0.5V). www.onsemi.com 3 NCP176 Table 5. ELECTRICAL CHARACTERISTICS − devices with VOUT−NOM . 1.8 V VIN = VOUT−NOM + 1 V, VEN = 1.2 V, IOUT = 1 mA, CIN = COUT = 1.0 mF, TJ = 25°C. The specifications in bold are guaranteed at −40°C ≤ TJ ≤ 85°C. (Note 6) Parameter Test Conditions Input Voltage Output Voltage TJ = +25°C Symbol Min Max Unit VIN 1.4 5.5 V VOUT −0.8 +0.8 % −1.5 +1.5 −40°C ≤ TJ ≤ 85°C Typ Line Regulation VIN = VOUT−NOM + 0.5 V to 5.25 V LineReg 0.02 0.1 %/V Load Regulation 1 mA ≤ IOUT ≤ 500 mA LoadReg 1 5.0 mV VDO mV Dropout Voltage (Note 7) Quiescent Current Standby Current Output Current Limit Short Circuit Current Enable Threshold Voltage Enable Input Current Power Supply Rejection Ratio Output Noise Output Discharge Resistance (NCP176A option only) IOUT = 500 mA 1.8 V ≤ VOUT < 2.1 V 200 275 2.1 V ≤ VOUT < 2.5 V 160 230 2.5 V ≤ VOUT < 3.0 V 130 190 3.0 V ≤ VOUT < 3.6 V 110 165 IOUT = 0 mA IQ 60 90 mA VEN = 0 V ISTBY 0.05 1 mA VOUT = VOUT−NOM − 100 mV IOUT 500 mA VOUT = 0 V ISC 550 EN Input Voltage “H” VENH 1.0 EN Input Voltage “L” VENL VEN = VIN = 5.5 V IEN 0.15 f = 1 kHz, Ripple 0.2 Vp−p, VIN = VOUT−NOM + 1.0 V, IOUT = 30 mA (VOUT ≤ 2.0V, VIN = 3.0 V) PSRR 75 dB 20x VOUT−NOM mVRMS f = 10 Hz to 100 kHz 750 mA V 0.4 0.6 mA VIN = 4.0 V, VEN = 0 V, VOUT = VOUT−NOM RACTDIS 60 W Thermal Shutdown Temperature Temperature rising from TJ = +25°C TSD 165 °C Thermal Shutdown Hysteresis Temperature falling from TSD TSDH 20 °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C. Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible. 7. Measured when the output voltage falls −3% below the nominal output voltage (voltage measured under the condition VIN = VOUT−NOM + 0.5V). www.onsemi.com 4 NCP176 TYPICAL CHARACTERISTICS 1.255 1.827 1.245 1.821 1.225 1.215 1.205 1.195 1.185 1.175 VOUT−NOM = 1.2 V 1.165 1.155 1.145 −40 −20 0 20 40 1.815 1.809 1.803 1.797 1.791 60 1.773 −40 80 −20 0 20 40 60 TEMPERATURE (°C) TEMPERATURE (°C) Figure 3. Output Voltage vs. Temperature Figure 4. Output Voltage vs. Temperature 3.35 0.10 3.34 0.08 3.33 0.06 3.32 3.31 3.30 3.29 3.28 3.27 VOUT−NOM = 3.3 V 3.26 3.25 −40 VOUT−NOM = 1.8 V 1.785 1.779 LINE REGULATION (%/V) OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 1.235 −20 0 20 40 60 80 0.04 0.02 0 −0.02 −0.04 −0.06 VIN = VOUT−NOM + 0.5 V to 5.25 V, VIN ≥ 1.4 V −0.08 −0.10 −40 −20 0 20 40 60 TEMPERATURE (°C) Figure 5. Output Voltage vs. Temperature Figure 6. Line Regulation vs. Temperature 5 VOUT−NOM = 1.2 V VOUT−NOM = 1.8 V VOUT−NOM = 3.3 V 4 3 2 1 0 −1 −2 IOUT = 1 mA to 500 mA −3 −4 −5 −40 −20 0 20 40 60 TEMPERATURE (°C) Figure 7. Load Regulation vs. Temperature www.onsemi.com 5 80 VOUT−NOM = 1.2 V VOUT−NOM = 1.8 V VOUT−NOM = 3.3 V TEMPERATURE (°C) LOAD REGULATION (mV) OUTPUT VOLTAGE (V) VIN = VOUT−NOM + 1 V (VOUT−NOM > 1.5 V) OR VIN = 2.5 V (VOUT−NOM ≤ 1.5 V), VEN = 1.2 V, IOUT = 1 MA, CIN = COUT = 1.0 MF, TJ = 25°C. 80 80 NCP176 TYPICAL CHARACTERISTICS VIN = VOUT−NOM + 1 V (VOUT−NOM > 1.5 V) OR VIN = 2.5 V (VOUT−NOM ≤ 1.5 V), VEN = 1.2 V, IOUT = 1 MA, CIN = COUT = 1.0 MF, TJ = 25°C. 275 275 VOUT−NOM = 1.8 V TJ = 25°C 175 150 125 TJ = −40°C 100 75 50 0 160 100 200 300 400 500 175 150 125 IOUT = 250 mA 100 75 IOUT = 100 mA 50 IOUT = 10 mA −20 0 20 40 80 Figure 8. Dropout Voltage vs. Output Current Figure 9. Dropout Voltage vs. Output Current 160 TJ = 85°C TJ = 25°C 100 80 60 TJ = −40°C 40 20 140 VOUT−NOM = 3.3 V IOUT = 500 mA 120 100 80 IOUT = 250 mA 60 40 IOUT = 100 mA 20 0 60 TEMPERATURE (°C) 120 0 200 OUTPUT CURRENT (mA) VOUT−NOM = 3.3 V 140 IOUT = 500 mA 225 25 0 −40 DROPOUT VOLTAGE (mV) DROPOUT VOLTAGE (mV) DROPOUT VOLTAGE (mV) TJ = 85°C 200 25 0 VOUT−NOM = 1.8 V 250 225 100 200 300 400 0 −40 500 IOUT = 10 mA −20 0 20 40 60 80 OUTPUT CURRENT (mA) TEMPERATURE (°C) Figure 10. Dropout Voltage vs. Output Current Figure 11. Dropout Voltage vs. Temperature 90 QUIESCENT CURRENT (mA) DROPOUT VOLTAGE (mV) 250 80 70 60 50 40 30 20 VOUT−NOM = 1.2 V VOUT−NOM = 1.8 V VOUT−NOM = 3.3 V IOUT = 0 mA 10 0 −40 −20 0 20 40 60 80 TEMPERATURE (°C) Figure 12. Quiescent Current vs. Temperature www.onsemi.com 6 NCP176 TYPICAL CHARACTERISTICS VIN = VOUT−NOM + 1 V (VOUT−NOM > 1.5 V) OR VIN = 2.5 V (VOUT−NOM ≤ 1.5 V), VEN = 1.2 V, IOUT = 1 MA, CIN = COUT = 1.0 MF, TJ = 25°C. 1.0 0.8 QUIESCENT CURRENT (mA) STANDBY CURRENT (mA) 90 VOUT−NOM = 1.2 V VOUT−NOM = 1.8 V VOUT−NOM = 3.3 V VEN = 0 V 0.9 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 −40 −20 0 20 40 60 70 TJ = −40°C 65 60 55 VOUT−NOM = 1.8 V 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Figure 13. Standby Current vs. Temperature Figure 14. Quiescent Current vs. Input Voltage 1000 SHORT CIRCUIT CURRENT (mA) GROUND CURRENT (mA) 75 INPUT VOLTAGE (V) VOUT−NOM = 1.8 V 250 200 150 100 TJ = 85°C TJ = 25°C TJ = −40°C 50 0 100 200 300 400 500 950 VOUT−FORCED = 0 V 900 850 800 750 700 650 VOUT−NOM = 1.2 V VOUT−NOM = 1.8 V VOUT−NOM = 3.3 V 600 550 500 −40 −20 0 20 40 60 OUTPUT CURRENT (mA) TEMPERATURE (°C) Figure 15. Ground Current vs. Output Current Figure 16. Short Circuit Current vs. Temperature 950 ENABLE THRESHOLD VOLTAGE (V) 1000 OUTPUT CURRENT LIMIT (mA) TJ = 85°C TJ = 25°C TEMPERATURE (°C) 300 0 80 50 80 IOUT = 0 mA 85 VOUT−FORCED = VOUT−NOM − 0.1 V 900 850 VOUT−NOM = 1.2 V 800 VOUT−NOM = 3.3 V 750 700 650 VOUT−NOM = 1.8 V 600 550 500 −40 −20 0 20 40 60 80 1.0 0.9 OFF −> ON 0.8 ON −> OFF 0.7 0.6 0.5 0.4 −40 VOUT−NOM = 1.8 V −20 0 20 40 60 TEMPERATURE (°C) TEMPERATURE (°C) Figure 17. Output Current Limit vs. Temperature Figure 18. Enable Threshold Voltage vs. Temperature www.onsemi.com 7 80 80 NCP176 TYPICAL CHARACTERISTICS VIN = VOUT−NOM + 1 V (VOUT−NOM > 1.5 V) OR VIN = 2.5 V (VOUT−NOM ≤ 1.5 V), VEN = 1.2 V, IOUT = 1 MA, CIN = COUT = 1.0 MF, TJ = 25°C. OUTPUT DISCHARGE RESISTANCE (W) ENABLE INPUT CURRENT (mA) 0.6 VOUT−NOM = 1.8 V VIN = 5.5 V VEN = 5.5 V 0.5 0.4 0.3 0.2 0.1 0 −40 −20 0 20 40 60 80 60 50 40 30 VOUT−NOM = 1.8 V VIN = 4.0 V VEN = 0 V VOUT−FORCED = VOUT−NOM 20 10 0 −40 −20 0 20 40 80 TEMPERATURE (°C) Figure 20. Output Discharge Resistance vs. Temperature (NCP176A option only) 6 OUTPUT VOLTAGE NOISE (mV/√Hz) 70 60 50 40 COUT = 1 mF X7R 0805 IOUT = 30 mA 30 20 VOUT−NOM = 1.8 V, VIN = 3.0 V VOUT−NOM = 3.3 V, VIN = 4.3 V 10 10 100 1K 10K 100K 1M 10M VOUT−NOM = 1.8 V, VIN = 2.8 V VOUT−NOM = 3.3 V, VIN = 4.3 V 5 COUT = 1 mF X7R 0805 4 Integral noise: 10 Hz − 100 kHz: 54 mVrms 10 Hz − 1 MHz: 62 mVrms 3 2 1 0 10 100 1K 10K 100K FREQUENCY (Hz) FREQUENCY (Hz) Figure 21. Power Supply Rejection Ratio Figure 22. Output Voltage Noise Spectral Density VOUT−NOM = 3.3 V 100 mA/div VOUT−NOM = 3.3 V 50 mA/div 60 TEMPERATURE (°C) 80 IIN VIN IIN VIN VOUT VOUT 1 V/div 1 V/div PSRR (dB) 70 Figure 19. Enable Input Current vs. Temperature 90 0 80 1 ms/div 50 ms/div Figure 23. Turn−ON/OFF − VIN driven (slow) Figure 24. Turn−ON − VIN driven (fast) www.onsemi.com 8 1M NCP176 TYPICAL CHARACTERISTICS 500 mV/div 10 mV/div IIN 50 mA/div VOUT 1 V/div VOUT−NOM = 3.3 V 3.3 V 2.3 V VIN tR = tF = 1 ms VOUT 1.2 V 100 ms/div 20 ms/div 1 V/div VOUT−NOM = 3.3 V VIN 200 mA/div 3.8 V Figure 26. Line Transient Response tR = tF = 1 ms 50 mV/div 10 mV/div 500 mV/div Figure 25. Turn−ON/OFF − EN driven 4.8 V VOUT 3.3 V VIN VOUT 20 ms/div tR = tF = 1 ms 1 mA 1.2 V 10 ms/div Figure 28. Load Transient Response 220 VIN VOUT−NOM = 3.3 V VIN = 4.3 V 500 mA tR = tF = 1 ms IOUT VOUT 1 mA 1.2 V 10 ms/div qJA, JUNCTION−TO−AMBIENT THERMAL RESISTANCE (°C/W) 1 V/div VOUT−NOM = 1.2 V VIN = 2.2 V 500 mA IOUT Figure 27. Line Transient Response 50 mV/div 200 mA/div VOUT−NOM = 1.2 V 1.6 200 PD(MAX), 2 oz Cu 180 PD(MAX), 1 oz Cu 160 140 qJA, 1 oz Cu 120 qJA, 2 oz Cu 100 1.0 0.8 0.6 0.2 400 500 0 600 PCB COPPER AREA (mm2) Figure 30. qJA and PD(MAX) vs. Copper Area www.onsemi.com 9 1.2 0.4 TA = 25°C 80 TJ = 125°C (for PD(MAX) curve 60 0 100 200 300 Figure 29. Load Transient Response 1.4 PD(MAX), MAXIMUM POWER DISSIPATION (W) VIN VEN 1 V/div 2 V/div VIN = VOUT−NOM + 1 V (VOUT−NOM > 1.5 V) OR VIN = 2.5 V (VOUT−NOM ≤ 1.5 V), VEN = 1.2 V, IOUT = 1 MA, CIN = COUT = 1.0 MF, TJ = 25°C. NCP176 APPLICATIONS INFORMATION General Enable Operation The NCP176 is a high performance 500 mA low dropout linear regulator (LDO) delivering excellent noise and dynamic performance. Thanks to its adaptive ground current behavior the device consumes only 60 mA of quiescent current (no−load condition). The regulator features low noise of 48 mVRMS, PSRR of 75 dB at 1 kHz and very good line/load transient performance. Such excellent dynamic parameters, small dropout voltage and small package size make the device an ideal choice for powering the precision noise sensitive circuitry in portable applications. A logic EN input provides ON/OFF control of the output voltage. When the EN is low the device consumes as low as 50 nA typ. from the IN pin. The device is fully protected in case of output overload, output short circuit condition or overheating, assuring a very robust design. The LDO uses the EN pin to enable/disable its operation and to deactivate/activate the output discharge function (A−version only). If the EN pin voltage is < 0.4 V the device is disabled and the pass transistor is turned off so there is no current flow between the IN and OUT pins. On A−version the active discharge transistor is active so the output voltage is pulled to GND through 60 W (typ.) resistor. If the EN pin voltage is > 1.0 V the device is enabled and regulates the output voltage. The active discharge transistor is turned off. The EN pin has internal pull−down current source with value of 150 nA typ. which assures the device is turned off when the EN pin is unconnected. In case when the EN function isn’t required the EN pin should be tied directly to IN pin. Output Current Limit Output current is internally limited to a 750 mA typ. The LDO will source this current when the output voltage drops down from the nominal output voltage (test condition is VOUT−NOM – 100mV). If the output voltage is shorted to ground, the short circuit protection will limit the output current to 750 mA typ. The current limit and short circuit protection will work properly over the whole temperature and input voltage ranges. There is no limitation for the short circuit duration. Input Capacitor Selection (CIN) Input capacitor connected as close as possible is necessary to ensure device stability. The X7R or X5R capacitor should be used for reliable performance over temperature range. The value of the input capacitor should be 1 mF or greater for the best dynamic performance. This capacitor will provide a low impedance path for unwanted AC signals or noise modulated onto the input voltage. There is no requirement for the ESR of the input capacitor but it is recommended to use ceramic capacitor for its low ESR and ESL. A good input capacitor will limit the influence of input trace inductance and source resistance during load current changes. Thermal Shutdown When the LDO’s die temperature exceeds the thermal shutdown threshold value the device is internally disabled. The IC will remain in this state until the die temperature decreases by value called thermal shutdown hysteresis. Once the IC temperature falls this way the LDO is back enabled. The thermal shutdown feature provides the protection against overheating due to some application failure and it is not intended to be used as a normal working function. Output Capacitor Selection (COUT) The LDO requires an output capacitor connected as close as possible to the output and ground pins. The recommended capacitor value is 1 mF, ceramic X7R or X5R type due to its low capacitance variations over the specified temperature range. The LDO is designed to remain stable with minimum effective capacitance of 0.8 mF. When selecting the capacitor the changes with temperature, DC bias and package size needs to be taken into account. Especially for small package size capacitors such as 0201 the effective capacitance drops rapidly with the applied DC bias voltage (refer the capacitor’s datasheet for details). There is no requirement for the minimum value of equivalent series resistance (ESR) for the COUT but the maximum value of ESR should be less than 0.5 W. Larger capacitance and lower ESR improves the load transient response and high frequency PSRR. Only ceramic capacitors are recommended, the other types like tantalum capacitors not due to their large ESR. Power Dissipation Power dissipation caused by voltage drop across the LDO and by the output current flowing through the device needs to be dissipated out from the chip. The maximum power dissipation is dependent on the PCB layout, number of used Cu layers, Cu layers thickness and the ambient temperature. The maximum power dissipation can be computed by following equation: P D(MAX) + TJ * TA [W] q JA (eq. 1) Where (TJ − TA) is the temperature difference between the junction and ambient temperatures and θJA is the thermal resistance (dependent on the PCB as mentioned above). www.onsemi.com 10 NCP176 The power dissipated by the LDO for given application conditions can be calculated by the next equation: P D + V IN @ I GND ) ǒV IN * V OUTǓ @ I OUT [W] 100 kHz) can be tuned by the selection of COUT capacitor and proper PCB layout. A simple LC filter could be added to the LDO’s IN pin for further PSRR improvement. (eq. 2) Enable Turn−On Time Where IGND is the LDO’s ground current, dependent on the output load current. Connecting the exposed pad and N/C pin to a large ground planes helps to dissipate the heat from the chip. The relation of θJA and PD(MAX) to PCB copper area and Cu layer thickness could be seen on the Figure 30. The enable turn−on time is defined as the time from EN assertion to the point in which VOUT will reach 98% of its nominal value. This time is dependent on various application conditions such as VOUT−NOM, COUT and TA. PCB Layout Recommendations To obtain good transient performance and good regulation characteristics place CIN and COUT capacitors as close as possible to the device pins and make the PCB traces wide. In order to minimize the solution size, use 0402 or 0201 capacitors size with appropriate effective capacitance. Larger copper area connected to the pins will also improve the device thermal resistance. The actual power dissipation can be calculated from the equation above (Power Dissipation section). Exposed pad and N/C pin should be tied to the ground plane for good power dissipation. Reverse Current The PMOS pass transistor has an inherent body diode which will be forward biased in the case when VOUT > VIN. Due to this fact in cases, where the extended reverse current condition can be anticipated the device may require additional external protection. Power Supply Rejection Ratio The LDO features very high power supply rejection ratio. The PSRR at higher frequencies (in the range above ORDERING INFORMATION TABLE Voltage Option Marking Option Package Shipping† NCP176AMX100TCG 1.0 V AA With output discharge NCP176AMX120TCG (Note 8) 1.2 V AE XDFN6 (Pb−Free) 3000 or 5000 / Tape & Reel (Note 8) NCP176AMX180TCG (Note 8) 1.8 V AF NCP176AMX300TCG 3.0 V AC NCP176AMX330TCG (Note 8) 3.3 V AD NCP176BMX100TCG (Note 8) 1.0 V DA NCP176BMX120TCG (Note 8) 1.2 V DE NCP176BMX180TCG (Note 8) 1.8 V DF NCP176BMX280TCG (Note 8) 2.8 V DG NCP176BMX300TCG 3.0 V DC NCP176BMX330TCG 3.3 V DD Part Number Without output discharge †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 8. Product processed after October 1, 2022 are shipped with quantity 5000 units / tape & reel. www.onsemi.com 11 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS XDFN6 1.20x1.20, 0.40P CASE 711AT ISSUE C SCALE 4:1 D PIN ONE REFERENCE DATE 04 DEC 2015 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO THE PLATED TERMINALS. 4. COPLANARITY APPLIES TO THE PAD AS WELL AS THE TERMINALS. A B ÍÍÍ ÍÍÍ ÍÍÍ E L TOP VIEW DETAIL A OPTIONAL CONSTRUCTION A 0.05 C DIM A A1 b D D2 E E2 e L L1 A1 GENERIC MARKING DIAGRAM* 0.05 C C SIDE VIEW NOTE 4 MILLIMETERS TYP MAX 0.37 0.45 0.03 0.05 0.18 0.23 1.20 1.25 0.94 1.04 1.20 1.25 0.40 0.30 0.40 BSC 0.15 0.20 0.25 0.05 0.00 0.10 MIN 0.30 0.00 0.13 1.15 0.84 1.15 0.20 SEATING PLANE XX M D2 1 3 6X L1 XX = Specific Device Code M = Date Code E2 6X *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. L 6 DETAIL A 4 6X e b 0.10 BOTTOM VIEW M C A B NOTE 3 RECOMMENDED MOUNTING FOOTPRINT* 1.08 PACKAGE OUTLINE 6X 0.37 1.40 0.40 1 0.40 PITCH 6X 0.24 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON76141F XDFN6, 1.20 X 1.20, 0.40P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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