DATA SHEET
www.onsemi.com
Linear Voltage Regulator Fast Transient Response,
Enable
500 mA
1
XDFN4
CASE 711AJ
MARKING DIAGRAM
NCP177
XX M
The NCP177 is CMOS LDO regulator featuring 500 mA output
current. The input voltage is as low as 1.6 V and the output voltage can
be set from 0.7 V.
Features
•
•
•
•
•
•
•
•
•
•
•
Operating Input Voltage Range: 1.6 V to 5.5 V
Output Voltage Range: 0.7 V to 3.6 V
Quiescent Current typ. 60 mA
Low Dropout: 200 mV Typ. at 500 mA, VOUT−NOM = 1.8 V
High Output Voltage Accuracy ±0.8%
Stable with Small 1 mF Ceramic Capacitors
Over−current Protection
Thermal Shutdown Protection: 175°C
With (NCP177A) and Without (NCP177B) Output Discharge
Function
Available in XDFN4 1 mm x 1 mm x 0.4 mm Package
This is a Pb−Free Device
Typical Applications
CIN
1 μF
IN
OUT
NCP177
ON
EN
XX = Specific Device Code
M = Date Code
PINOUT DIAGRAM
(Top View)
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 10 of this data sheet.
• Battery Powered Equipment
• Portable Communication Equipment
• Cameras, Image Sensors and Camcorders
VIN
1
VOUT
COUT
1 μF
GND
OFF
Figure 1. Typical Application
Schematic
© Semiconductor Components Industries, LLC, 2017
September, 2022 − Rev. 8
1
Publication Order Number:
NCP177/D
NCP177
IN
OUT
IN
OUT
PROG . VOLTAGE
REFERENCE AND
SOFT − START
PROG . VOLTAGE
REFERENCE AND
SOFT − START
EN
EN
0.7 V
0.7 V
THERMAL
SHUTDOWN
THERMAL
SHUTDOWN
GND
NCP177A (with output active discharge)
GND
NCP177B (without output active discharge)
Figure 2. Internal Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
Pin Name
Description
1
OUT
Regulated output voltage pin
2
GND
Power supply ground pin
3
EN
Enable pin (active “H”)
4
IN
Power supply input voltage pin
−
EPAD
Exposed pad should be tied to ground plane for better power dissipation
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
IN
−0.3 to 6.0
V
OUT
−0.3 to VIN + 0.3
V
EN
−0.3 to 6.0
V
IOUT
Internally Limited
mA
TJ(MAX)
150
°C
TSTG
−55 to 150
°C
ESD Capability, Human Body Model (Note 2)
ESDHBM
2000
V
ESD Capability, Machine Model (Note 2)
ESDMM
200
V
Input Voltage (Note 1)
Output Voltage
Chip Enable Input
Output Current
Maximum Junction Temperature
Storage Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per JESD22−A114
ESD Machine Model tested per JESD22−A115
Latchup Current Maximum Rating tested per JEDEC standard: JESD78
THERMAL CHARACTERISTICS
Rating
Thermal Characteristics, XDFN4 (Note 3)
Thermal Resistance, Junction−to−Air
Symbol
Value
Unit
RqJA
223
°C/W
3. Measured according to JEDEC board specification. Detailed description of the board can be found in JESD51−7
www.onsemi.com
2
NCP177
ELECTRICAL CHARACTERISTICS
VIN = VOUT−NOM + 0.5 V or VIN = 1.6 V (whichever is higher), VEN = 1.2 V, IOUT = 1 mA, CIN = COUT = 1.0 mF, TJ = 25°C
The specifications in bold are guaranteed at −40°C ≤ TJ ≤ 85°C. (Note 4)
Parameter
Test Conditions
Max
Unit
1.6
5.5
V
−0.8
0.8
%
−40°C ≤ TJ ≤ 85°C
−2.0
1.0
TJ = +25°C
−1.2
1.2
−40°C ≤ TJ ≤ 85°C
−2.5
1.5
Input Voltage
Output Voltage
VOUT_NOM ≥ 1.8 V
TJ = +25°C
VOUT_NOM < 1.8 V
Symbol
Min
VIN
VOUT
Typ
Line Regulation
VIN = VOUT−NOM + 0.5 V to 5.25 V
VIN ≥ 1.6 V
LineReg
0.02
0.1
%/V
Load Regulation
1 mA ≤ IOUT ≤ 500 mA, VIN ≥ 1.75 V
LoadReg
1
10
mV
VDO
295
380
mV
1.8 V ≤ VOUT < 2.1 V
200
285
2.1 V ≤ VOUT < 2.5 V
160
240
2.5 V ≤ VOUT < 3.0 V
130
200
Dropout Voltage (Note 5)
IOUT = 500 mA
1.4 V ≤ VOUT < 1.8 V
3.0 V ≤ VOUT < 3.6 V
Quiescent Current
Standby Current
Output Current Limit
110
175
IOUT = 0 mA
IQ
60
90
mA
VEN = 0 V
ISTBY
0.1
1
mA
VOUT = VOUT−NOM − 100 mV, VIN ≥ 1.75 V
IOUT
VOUT = VOUT−NOM − 100 mV, VIN ≥ 1.6 V
Short Circuit Current
EN Pin Threshold Voltage
Enable Input Current
Power Supply Rejection Ratio
Output Noise
Output Discharge Resistance
(NCP177A option only)
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
510
800
300
600
800
mA
VOUT = 0 V, VIN ≥ 1.75 V
ISC
510
EN Input Voltage “H”
VENH
1.0
EN Input Voltage “L”
VENL
VEN = VIN = 5.5 V
IEN
0.15
f = 1 kHz, Ripple 0.2 Vp−p,
VIN = VOUT−NOM + 1.0 V, IOUT = 30 mA
(VOUT ≤ 2.0 V, VIN = 3.0 V)
PSRR
75
dB
54
mVRMS
f = 10 Hz to 100 kHz
mA
V
0.4
0.6
mA
VIN = 4.0 V, VEN = 0 V, VOUT = VOUT−NOM
RACTDIS
60
W
Temperature rising from 25°C
TSD_TEMP
175
°C
Temperature falling from TSD_TEMP
TSD_HYST
20
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C.
Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.
5. Measured when the output voltage falls 3% below the nominal output voltage (the voltage measured under the condition VIN = VOUT−NOM
+ 0.5 V).
www.onsemi.com
3
NCP177
TYPICAL CHARACTERISTICS
VIN = VOUT−NOM + 0.5 V OR VIN = 1.6 V (WHICHEVER IS HIGHER), VEN = 1.2 V, IOUT = 1 MA, CIN = COUT = 1.0 MF, TJ = 25°C
1.814
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
0.708
0.703
0.698
0.693
VOUT−NOM = 0.7 V
0.688
0.683
−40
−20
0
20
40
60
1.804
1.794
1.784
VOUT−NOM = 1.8 V
1.774
1.764
−40
80
−20
0
20
TEMPERATURE (°C)
Figure 3. Output Voltage vs. Temperature
Figure 4. Output Voltage vs. Temperature
0.08
3.314
0.06
LINE REGULATION (%/V)
OUTPUT VOLTAGE (V)
0.10
3.304
3.294
3.284
3.274
3.264
VOUT−NOM = 3.3 V
3.254
3.244
−20
0
20
60
0.04
0.02
0
−0.02
−0.04
−0.06
−0.08
−0.10
−40
80
−20
0
20
40
60
TEMPERATURE (°C)
Figure 5. Output Voltage vs. Temperature
Figure 6. Line Regulation vs. Temperature
2
1
0
−1
−2
−3
−20
0
20
40
60
VOUT−NOM = 1.8 V
250
DROPOUT VOLTAGE (mV)
3
80
275
VOUT−NOM = 3.3 V
IOUT = 1 mA to 500 mA
4
LOAD REGULATION (mV)
40
80
VOUT−NOM = 3.3 V
VIN = 3.8 V to 5.25 V
TEMPERATURE (°C)
5
−4
−5
−40
60
TEMPERATURE (°C)
3.324
3.234
−40
40
200
TJ = 25°C
175
150
125
TJ = −40°C
100
75
50
25
0
80
TJ = 85°C
225
0
100
200
300
400
500
TEMPERATURE (°C)
OUTPUT CURRENT (mA)
Figure 7. Load Regulation vs. Temperature
Figure 8. Dropout Voltage vs. Output Current
www.onsemi.com
4
NCP177
TYPICAL CHARACTERISTICS
VIN = VOUT−NOM + 0.5 V OR VIN = 1.6 V (WHICHEVER IS HIGHER), VEN = 1.2 V, IOUT = 1 MA, CIN = COUT = 1.0 MF, TJ = 25°C
275
DROPOUT VOLTAGE (mV)
200
175
150
125
IOUT = 250 mA
100
75
50
IOUT = 100 mA
25
0
−40
IOUT = 10 mA
−20
0
20
40
TJ = 85°C
120
TJ = 25°C
100
80
60
TJ = −40°C
40
60
0
80
0
100
200
300
400
500
TEMPERATURE (°C)
OUTPUT CURRENT (mA)
Figure 9. Dropout Voltage vs. Temperature
Figure 10. Dropout Voltage vs. Output Current
1.0
VOUT−NOM = 3.3 V
140
0.9
IOUT = 500 mA
120
100
80
IOUT = 250 mA
60
40
IOUT = 100 mA
20
−20
0
20
40
60
VEN = 0 V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
VOUT−NOM = 0.7 V to 3.3 V
0.1
0
−40
IOUT = 10 mA
0
−40
80
−20
0
20
40
60
80
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 11. Dropout Voltage vs. Temperature
Figure 12. Standby Current vs. Temperature
90
80
QUIESCENT CURRENT (mA)
90
QUIESCENT CURRENT (mA)
VOUT−NOM = 3.3 V
140
20
STANDBY CURRENT (mA)
DROPOUT VOLTAGE (mV)
IOUT = 500 mA
225
160
DROPOUT VOLTAGE (mV)
160
VOUT−NOM = 1.8 V
250
VOUT−NOM = 3.3 V
70
60
VOUT−NOM = 0.7 V
VOUT−NOM = 1.8 V
50
40
30
20
IOUT = 0 mA
10
0
−40
−20
0
20
40
60
80
75
TJ = −40°C
70
TJ = 25°C
65
TJ = 85°C
60
VOUT−NOM = 1.8 V
55
50
80
IOUT = 0 mA
85
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
TEMPERATURE (°C)
INPUT VOLTAGE (V)
Figure 13. Quiescent Current vs. Temperature
Figure 14. Quiescent Current vs. Input Voltage
www.onsemi.com
5
NCP177
TYPICAL CHARACTERISTICS
VIN = VOUT−NOM + 0.5 V OR VIN = 1.6 V (WHICHEVER IS HIGHER), VEN = 1.2 V, IOUT = 1 MA, CIN = COUT = 1.0 MF, TJ = 25°C
1000
SHORT CIRCUIT CURRENT (mA)
GROUND CURRENT (mA)
350
300
250
200 TJ = −40°C
150
TJ = 25°C
100
TJ = 85°C
50
0
VOUT−NOM = 1.8 V
0
100
200
300
400
500
900
850
1.8 V
800
1.4 V
750
700
3.3 V
650
VOUT−NOM = 0.7 V
600
550
500
−40
−20
0
20
40
60
TEMPERATURE (°C)
Figure 15. Ground Current vs. Output Current
Figure 16. Short Circuit Current vs.
Temperature
950
ENABLE THRESHOLD VOLTAGE (V)
OUTPUT CURRENT LIMIT (mA)
VOUT−FORCED = 0 V
OUTPUT CURRENT (mA)
1000
VOUT−FORCED = VOUT−NOM − 0.1 V
900
850
1.8 V
800
1.4 V
750
3.3 V
700
650
VOUT−NOM = 0.7 V
600
550
500
−40
−20
0
20
40
60
80
OFF −> ON
0.8
ON −> OFF
0.7
0.6
0.5
0.4
−40
VOUT−NOM = 1.8 V
−20
0
20
40
60
Figure 17. Output Current Limit vs.
Temperature
Figure 18. Enable Threshold Voltage vs.
Temperature
OUTPUT DISCHARGE RESISTANCE (W)
0.5
0.4
0.3
0.2
0.1
0
−40
0.9
TEMPERATURE (°C)
VOUT−NOM = 1.8 V
VIN = 5.5 V
VEN = 5.5 V
−20
0
20
40
60
80
80
1.0
TEMPERATURE (°C)
0.6
ENABLE INPUT CURRENT (mA)
950
80
70
60
50
40
30
VOUT−NOM = 1.8 V
VIN = 4.0 V
VEN = 0 V
VOUT−FORCED = VOUT−NOM
20
10
0
−40
−20
0
20
40
60
80
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 19. Enable Input Current vs.
Temperature
Figure 20. Output Discharge Resistance vs.
Temperature (NCP177A option only)
www.onsemi.com
6
NCP177
TYPICAL CHARACTERISTICS
VIN = VOUT−NOM + 0.5 V OR VIN = 1.6 V (WHICHEVER IS HIGHER), VEN = 1.2 V, IOUT = 1 MA, CIN = COUT = 1.0 MF, TJ = 25°C
90
6
OUTPUT VOLTAGE NOISE (mV/√Hz)
COUT = 1 mF X7R 0805
80
60
50
40
30
20
VOUT_NOM = 1.8 V, VIN = 3.0 V
VOUT_NOM = 3.3 V, VIN = 4.3 V
10
10
100
1k
10k
100k
1M
COUT = 1 mF X7R 0805
4
Integral Noise:
10 Hz − 100 kHz: 54 mVrms
10 Hz − 1 MHz: 62 mVrms
3
2
1
0
10M
10
100
1k
100k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 21. Power Supply Rejection Ratio
Figure 22. Output Voltage Noise Spectral
Density
VIN
1 V/div
50 mA/div
IIN
IIN
VIN
VOUT
1 V/div
VOUT
1 ms/div
50 ms/div
Figure 24. Turn−ON − VIN Driven (fast)
VIN
VOUT−NOM = 1.8 V
500 mV/div
2 V/div
Figure 23. Turn−ON/OFF − VIN Driven (slow)
VOUT−NOM = 1.8 V
VEN
1M
VOUT−NOM = 1.8 V
VOUT−NOM = 1.8 V
50 mA/div
10k
500 mV/div
0
IIN
3.3 V
VIN
tR = tF = 1 ms
2.3 V
500 mV/div
Without output discharge
With output discharge
5 mV/div
PSRR (dB)
70
VOUT_NOM = 1.8 V, VIN = 3.0 V
VOUT_NOM = 3.3 V, VIN = 4.3 V
5
VOUT
1.8 V
VOUT
1 ms/div
5 ms/div
Figure 25. Turn−ON/OFF − EN Driven
Figure 26. Line Transient Response
www.onsemi.com
7
NCP177
TYPICAL CHARACTERISTICS
VIN
IOUT
VOUT
500 mA
VOUT−NOM = 1.8 V
tR = tF = 1 ms
1 mA
1.8 V
PD(MAX), 2 oz Cu
350
0.7
0.6
330
310
PD(MAX), 1 oz Cu 0.5
290
0.4
270
0.3
250
qJA, 1 oz Cu
230
210
190
20 ms/div
TA = 25°C
TJ = 125°C (for PD(MAX) curve)
0
100
200
300
qJA, 2 oz Cu 0.1
400
500
600
PCB COPPER AREA (mm2)
Figure 27. Load Transient Response
0.2
0
PD(MAX), MAXIMUM POWER DISSIPATION (W)
370
qJA, JUNCTION TO AMBIENT
THERMAL RESISTANCE (°C/W)
50 mV/div
200 mA/div
1 V/div
VIN = VOUT−NOM + 0.5 V OR VIN = 1.6 V (WHICHEVER IS HIGHER), VEN = 1.2 V, IOUT = 1 MA, CIN = COUT = 1.0 MF, TJ = 25°C
Figure 28. qJA and PD(MAX) vs. Copper Area
APPLICATIONS INFORMATION
General
Output Capacitor Selection (COUT)
The NCP177 is a high performance 500 mA low dropout
linear regulator (LDO) delivering excellent noise and
dynamic performance. Thanks to its adaptive ground current
behavior the device consumes only 60 mA of quiescent
current (no−load condition).
The regulator features low noise of 48 mVRMS, PSRR of
75 dB at 1 kHz and very good line/load transient
performance. Such excellent dynamic parameters, small
dropout voltage and small package size make the device an
ideal choice for powering the precision noise sensitive
circuitry in portable applications.
A logic EN input provides ON/OFF control of the output
voltage. When the EN is low the device consumes as low as
100 nA typ. from the IN pin.
The device is fully protected in case of output overload,
output short circuit condition or overheating, assuring a very
robust design.
The LDO requires an output capacitor connected as close
as possible to the output and ground pins. The recommended
capacitor value is 1 mF, ceramic X7R or X5R type due to its
low capacitance variations over the specified temperature
range. The LDO is designed to remain stable with minimum
effective capacitance of 0.8 mF. When selecting the capacitor
the changes with temperature, DC bias and package size
needs to be taken into account. Especially for small package
size capacitors such as 0201 the effective capacitance drops
rapidly with the applied DC bias voltage (refer the
capacitor’s datasheet for details).
There is no requirement for the minimum value of
equivalent series resistance (ESR) for the COUT but the
maximum value of ESR should be less than 0.5 W. Larger
capacitance and lower ESR improves the load transient
response and high frequency PSRR. Only ceramic
capacitors are recommended, the other types like tantalum
capacitors not due to their large ESR.
Input Capacitor Selection (CIN)
Input capacitor connected as close as possible is necessary
to ensure device stability. The X7R or X5R capacitor should
be used for reliable performance over temperature range.
The value of the input capacitor should be 1 mF or greater for
the best dynamic performance. This capacitor will provide
a low impedance path for unwanted AC signals or noise
modulated onto the input voltage.
There is no requirement for the ESR of the input capacitor
but it is recommended to use ceramic capacitor for its low
ESR and ESL. A good input capacitor will limit the
influence of input trace inductance and source resistance
during load current changes.
Enable Operation
The LDO uses the EN pin to enable/disable its operation
and to deactivate/activate the output discharge function
(A−version only).
If the EN pin voltage is < 0.4 V the device is disabled and
the pass transistor is turned off so there is no current flow
between the IN and OUT pins. On A−version the active
discharge transistor is active so the output voltage is pulled
to GND through 60 W (typ.) resistor.
If the EN pin voltage is > 1.0 V the device is enabled and
regulates the output voltage. The active discharge transistor
is turned off.
www.onsemi.com
8
NCP177
The power dissipated by the LDO for given application
conditions can be calculated by the next equation:
The EN pin has internal pull−down current source with
value of 300 nA typ. which assures the device is turned off
when the EN pin is unconnected. In case when the EN
function isn’t required the EN pin should be tied directly to
IN pin.
P D + V IN @ I GND ) ǒV IN * V OUTǓ @ I OUT [W]
Where: IGND is the LDO’s ground current, dependent on the
output load current.
Connecting the exposed pad and N/C pin to a large ground
planes helps to dissipate the heat from the chip.
The relation of θJA and PD(MAX) to PCB copper area and
Cu layer thickness could be seen on the Figure 26.
Output Current Limit
Output current is internally limited to a 750 mA typ. The
LDO will source this current when the output voltage drops
down from the nominal output voltage (test condition is
VOUT−NOM – 100 mV). If the output voltage is shorted to
ground, the short circuit protection will limit the output
current to 700 mA typ. The current limit and short circuit
protection will work properly over the whole temperature
and input voltage ranges. There is no limitation for the short
circuit duration.
Reverse Current
The PMOS pass transistor has an inherent body diode
which will be forward biased in the case when VOUT > VIN.
Due to this fact in cases, where the extended reverse current
condition can be anticipated the device may require
additional external protection.
Thermal Shutdown
When the LDO’s die temperature exceeds the thermal
shutdown threshold value the device is internally disabled.
The IC will remain in this state until the die temperature
decreases by value called thermal shutdown hysteresis.
Once the IC temperature falls this way the LDO is back
enabled. The thermal shutdown feature provides the
protection against overheating due to some application
failure and it is not intended to be used as a normal working
function.
Power Supply Rejection Ratio
The LDO features very high power supply rejection ratio.
The PSRR at higher frequencies (in the range above
100 kHz) can be tuned by the selection of COUT capacitor
and proper PCB layout. A simple LC filter could be added
to the LDO’s IN pin for further PSRR improvement.
Enable Turn−On Time
The enable turn−on time is defined as the time from EN
assertion to the point in which VOUT will reach 98% of its
nominal value. This time is dependent on various
application conditions such as VOUT−NOM, COUT and TA.
Power Dissipation
Power dissipation caused by voltage drop across the LDO
and by the output current flowing through the device needs
to be dissipated out from the chip. The maximum power
dissipation is dependent on the PCB layout, number of used
Cu layers, Cu layers thickness and the ambient temperature.
The maximum power dissipation can be computed by
following equation:
P D(MAX) +
TJ * TA
125 * T A
+
[W]
q JA
q JA
(eq. 2)
PCB Layout Recommendations
To obtain good transient performance and good regulation
characteristics place CIN and COUT capacitors as close as
possible to the device pins and make the PCB traces wide.
In order to minimize the solution size, use 0402 or 0201
capacitors size with appropriate effective capacitance.
Larger copper area connected to the pins will also improve
the device thermal resistance. The actual power dissipation
can be calculated from the equation above (Power
Dissipation section). Exposed pad and N/C pin should be
tied to the ground plane for good power dissipation.
(eq. 1)
Where: (TJ − TA) is the temperature difference between the
junction and ambient temperatures and θJA is the thermal
resistance (dependent on the PCB as mentioned above).
For reliable operation junction temperature should be
limited do +125°C.
www.onsemi.com
9
NCP177
ORDERING INFORMATION
Part Number
Voltage Option
Option
Marking
NCP177AMX070TCG (Note 6)
0.70 V
JA
NCP177AMX090TCG (Note 6)
0.90 V
JM
NCP177AMX100TCG
1.00 V
JC
NCP177AMX110TCG
1.10 V
JD
NCP177AMX120TCG (Note 6)
1.20 V
NCP177AMX125TCG (Note 6)
1.25 V
NCP177AMX135TCG
1.35 V
JF
NCP177AMX150TCG
1.50 V
JG
NCP177AMX180TCG (Note 6)
1.80 V
JH
NCP177AMX330TCG (Note 6)
3.30 V
JJ
NCP177BMX070TCG (Note 6)
0.70 V
HA
NCP177BMX100TCG
1.00 V
HC
NCP177BMX110TCG (Note 6)
1.10 V
HD
NCP177BMX120TCG
1.20 V
NCP177BMX125TCG (Note 6)
1.25 V
NCP177BMX135TCG (Note 6)
1.35 V
NCP177BMX150TCG (Note 6)
1.50 V
HG
NCP177BMX180TCG (Note 6)
1.80 V
HH
NCP177BMX330TCG (Note 6)
3.30 V
HJ
With output
discharge
Without
output
discharge
Package
Shipping†
XDFN−4
(Pb−Free)
JE
JK
3000 or 5000 / Tape & Reel
(Note 6)
HE
HL
HF
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
6. Product processed after October 1, 2022 are shipped with quantity 5000 units / tape & reel.
www.onsemi.com
10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
XDFN4 1.0x1.0, 0.65P
CASE 711AJ
ISSUE C
GENERIC
MARKING DIAGRAM*
XX M
1
DOCUMENT NUMBER:
DESCRIPTION:
XX = Specific Device Code
M = Date Code
98AON67179E
XDFN4, 1.0X1.0, 0.65P
DATE 08 MAR 2022
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative