NCP2823AFCCT2G

NCP2823 Series Audio Power Amplifier, 3.0 W, Filterless, Class D The NCP2823A/B are cost effective mono audio power amplifiers designed for portable electronic devices. NCP2823A is optimized for 8 W operation and NCP2823B can operate with speaker impedance down to 4.0 W. For Instance, NCP2823B is capable of delivering 3 W of continuous average power to a 4.0 W from a 5.0 V supply in a Bridge Tied Load (BTL) configuration. Under the same conditions, NCP2823A can provide 1.5 W to an 8.0 W BTL load with less than 10% THD+N. For cellular handsets or PDAs it offers space and cost savings because no output filter is required when using inductive transducers. With more than 90% efficiency and very low shutdown current, it increases the lifetime of your battery and drastically lowers the junction temperature. NCP2823 processes analog inputs with a pulse width modulation technique that lowers output noise and THD. The device allows independent gain while summing signals from various audio sources. Thus, in cellular handsets, the earpiece, the loudspeaker and even melody ringer can be driven with a single NCP2823. Due to its low 26 mV noise floor, A−weighted, clean listening is guaranteed no matter the load sensitivity. • • • • • • MARKING DIAGRAM 1 9−PIN FLIP−CHIP CSP FC SUFFIX CASE 499AL XXXG AYWW A1 XXX A Y WW G = QTA for NCP2823A = PMA for NCP2823B = TPG for NCP2823A with backside laminate = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 10 of this data sheet. Features • • • • • http://onsemi.com Optimized PWM Output Stage: Filterless Capability Externally gain setting Low consumption: 1.8 mA for NCP2823A High efficiency: up to 92% Large Output Power Capability: 3 W @ VP = 5.0 V, RL = 4 W, THD+N < 10% 3 W @ VP = 5.5 V, RL = 4 W, THD+N < 1% High PSRR: up to −77 dB Fully Differential Capability: RF immunity Thermal and Auto recovery Short−Circuit Protection CMRR (−80 dB) Eliminates Two Input Coupling Capacitors Pin to Pin compatible with NCP2820 Flip−Chip These Devices are Pb−Free and are RoHS Compliant 1.45 mm 3.7 mm Typical Applications • Audio Amplifier for ♦ ♦ ♦ ♦ Cellular Phones Digital Cameras Personal Digital Assistant and Portable Media Player GPS © Semiconductor Components Industries, LLC, 2011 January, 2011 − Rev. 2 1 Publication Order Number: NCP2823/D NCP2823 Series A1 INP A2 A3 AGND VOUTN B1 B2 B3 AVDD PVDD PGND C1 C2 C3 INN EN VOUTP (Top View) Figure 1. Pin Description BATTERY Cs VDD INN Rf VOUTP RAMP GENERATOR Data Processor Negative Differential Input CMOS Output Stage VOUTN Rf Ri RL = 8 W Ri INP 300 kW Positive Differential Input Shutdown Control EN Vih Vil Figure 2. Simplified Block Diagram http://onsemi.com 2 GND NCP2823 Series PIN FUNCTION DESCRIPTION Pin Pin Name Type A1 INP INPUT Positive Differential Input C1 INN INPUT Negative Differential Input B2 PVDD POWER Power Supply: This pin is the power supply of the device. A 4.7 mF ceramic capacitor or larger must bypass this input to the ground. This capacitor should be placed as close a possible to this input. B1 AVDD POWER Analog Power Supply: This pin must be connected to PVDD. C3 VOUTP OUTPUT Positive output Special care must be observed at layout level. See the Layout recommendations. Negative output: Special care must be observed at layout level. See the Layout recommendations. Description A3 VOUTN OUTPUT C2 EN INPUT B3 PGND POWER Power Ground: This pin is the power ground and carries the high switching current. A high quality ground must be provided to avoid any noise spikes/uncontrolled operation. Care must be observed to avoid high−density current flow in a limited PCB copper track. A2 AGND POWER Analog Ground: This pin is the analog ground of the device and must be connected to GND plane. Enable: When a High logic is applied to this pin, the device is activated MAXIMUM RATINGS Rating Symbol Value Unit VP −0.3 to +6.0 V VINP/N −0.3 to +VDD V VDG IDG −0.3 to VDD +0.3 1 V mA Human Body Model (HBM) ESD Rating are (Note 3) ESD HBM 2000 V Machine Model (MM) ESD Rating are (Note 3) ESD MM 200 V RqJC 90 °C/W Operating Ambient Temperature Range TA −40 to +85 °C Operating Junction Temperature Range TJ −40 to +125 °C Maximum Junction Temperature (Note 6) TJMAX +150 °C Storage Temperature Range TSTG −65 to +150 °C Moisture Sensitivity (Note 5) MSL Level 1 AVDD, PVDD Pins: Power Supply Voltage (Note 2) INP/N ,Pins: Input (Note 2) Digital Input/Output: EN Pin: Input Voltage Input Current WCSP 1.5 x 1.5 mm package (Notes 6 and 7) Thermal Resistance Junction−to−Case Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Maximum electrical ratings are defined as those values beyond which damage to the device may occur at TA = 25°C. 2. According to JEDEC standard JESD22−A108B. 3. This device series contains ESD protection and passes the following tests: Human Body Model (HBM) +/−2.0 kV per JEDEC standard: JESD22−A114 for all pins. Machine Model (MM) +/−200 V per JEDEC standard: JESD22−A115 for all pins. 4. Latch up Current Maximum Rating: $100 mA per JEDEC standard: JESD78 class II. 5. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A. 6. The thermal shutdown set to 150°C (typical) avoids irreversible damage on the device due to power dissipation. 7. The RqCA is dependent on the PCB heat dissipation. The maximum power dissipation (PD) is dependent on the min input voltage, the max output current and external components selected. R qCA + 125 * T A PD * R qJC http://onsemi.com 3 NCP2823 Series ELECTRICAL CHARACTERISTICS Min and Max Limits apply for TA between −40°C to +85°C and for VDD between 2.5 V to 5.5 V (Unless otherwise noted). Typical values are referenced to TA = + 25 °C and VDD = 3.6 V. (see Note 8) Symbol Parameter Conditions Min Typ Max Unit 5.5 V 300 350 kHz 1.8 2.4 2.6 4.6 1 GENERAL PERFORMANCES VP FOSC IDD Isd Operational Power Supply 2.5 Oscillator Frequency 250 Supply current NCP2823A VP = 3.6 V, No Load NCP2823B VP = 3.6 V, No Load mA Shutdown current VENL = VENR = 0 V 0.01 TON Turn ON Time EN rising edge 7.4 ms TOFF Turn Off Time EN falling edge 4 ms Zsd Class D Output impedance in shutdown mode VENL = 0 V 20 kW RDS(ON) Static drain−source on−state resistance of power Mosfets 300 mW NCP2823A, VP = 3.6 V, Po = 600 mW, RL = 8 W, F = 1 kHz 92 % NCP2823B, VP = 3.6 V, Po = 1 W, RL = 4 W, F = 1 kHz 90 h Efficiency mA Av Voltage gain FLP −3 dB Cut off Frequency of the Built in Low Pass Filter TSD Thermal Shut Down Protection 150 °C TSDH Thermal Shut Down Hysteresis 10 °C VIH Rising Voltage Input Logic High VIL Falling Voltage Input Logic Low RPLD 285 kW Ri 300 kW Ri 315 kW Ri kHz 30 1.2 Pull Down Resistor V/V − VDD V − 0.4 V 250 kW 0.3 mV F = 217 Hz, Input ac grounded −77 dB F = 1 kHz, Input ac grounded −63 Signal to noise ratio VP = 5 V, Pout = 600 mW (A. Weighted) 97 dB Common mode rejection ratio Input shorted together VIC = 1 Vpp, f = 217 Hz −80 dB Output Voltage noise Input ac grounded, Av = 0 dB No weighting 35 mV A. Weighted 26 AUDIO PERFORMANCES voo PSRR SNR CMRR Vn Output offset Power supply rejection ratio 8. Performances guaranteed over the indicated operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. http://onsemi.com 4 NCP2823 Series ELECTRICAL CHARACTERISTICS Min and Max Limits apply for TA between −40°C to +85°C and for VDD between 2.5 V to 5.5 V (Unless otherwise noted). Typical values are referenced to TA = + 25 °C and VDD = 3.6 V. (see Note 8) Symbol Parameter Conditions Min Typ Max Unit AUDIO PERFORMANCES Po Output Power NCP2823A RL = 8 W F = 1 kHz THD+N < 1% THD+N < 10% NCP2823B RL = 4 W F = 1 kHz THD+N < 1% THD+N < 10% THD+N Total harmonic distortion plus noise VP = 5 V 1.5 VP = 3.6 V 0.7 VP = 2.5 V 0.22 VP = 5 V 1.8 VP = 3.6 V 0.87 VP = 2.5 V 0.4 VP = 5 V 1.72 VP = 3.6 V 1.2 VP = 2.5 V 0.58 VP = 5 V W 3 VP = 3.6 V 1.57 VP = 2.5 V 0.71 VP = 3.6 V, Av = 6 dB, Po = 0.5 W 0.1 VP = 5 V, Av = 6 dB, Po = 1 W 0.08 % 8. Performances guaranteed over the indicated operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. http://onsemi.com 5 NCP2823 Series TYPICAL OPERATING CHARACTERISTICS 100 10 90 2.5 V 80 70 (%) 60 THD+N (%) 3.6 V 3 V to 2.5 V 4.2 V 50 5V 40 30 VP = 5.5 V 3V 1 4.2 V 3.6 V 5V VP = 5.5 V 0.1 20 10 0 0 500 1000 Pout (mW) 1500 0.01 2000 0.01 0.1 10 1 Pout (W) Figure 3. Efficiency vs Pout Figure 4. NCP2823A/B, THD+N vs Pout, RL = 8 W 1 10 VP = 2.7 V 0.1 3V 1 3.6 V THD(%) THD+N (%) 2.5 V 4.2 V 5V 0.01 0.1 VP = 5.5 V 0.01 0.01 0.1 1 0.001 10 10 100 1000 FREQUENCY (Hz) Pout (W) 0.1 0.1 THD(%) 1 THD(%) 1 2.5 V 0.01 100000 Figure 6. THD+N vs Frequency Pout = 150 mW, RL = 8 W Figure 5. NCP2823B, THD+N vs Pout, RL = 4 W VP = 5 V 10000 VP = 3.6 V VP = 5 V 0.01 3.6 V 0.001 10 100 1000 FREQUENCY (Hz) 10000 100000 Figure 7. THD+N vs Frequency Pout = 250 mW, RL = 8 W 0.001 10 100 1000 10000 FREQUENCY (Hz) 100000 Figure 8. THD+N vs Frequency Pout = 500 mW, RL = 8 W http://onsemi.com 6 NCP2823 Series TYPICAL OPERATING CHARACTERISTICS 1 1 VP = 2.7 V VP = 5 V 0.1 THD(%) THD(%) 0.1 0.01 0.001 10 0.01 100 1000 10000 FREQUENCY (Hz) 100000 0.001 10 Figure 9. THD+N vs Frequency Pout = 1 W, RL = 8 W 1 0.1 0.1 100000 VP = 3.6 V THD(%) THD(%) 1000 10000 FREQUENCY (Hz) Figure 10. THD+N vs Frequency Pout = 300 mW, RL = 4 W 1 VP = 5 V 2.5 V 0.01 100 VP = 5 V 0.01 4.2 V 0.001 10 100 1000 10000 FREQUENCY (Hz) 100000 0.001 10 Figure 11. THD+N vs Frequency Pout = 500 mW, RL = 4 W 100 1000 10000 FREQUENCY (Hz) 100000 Figure 12. THD+N vs Frequency Pout = 1 W, RL = 4 W 1 0 VP = 5 V −10 −20 0.1 THD(%) CMRR(dB) −30 0.01 −40 −50 −60 −70 VP = 2.5 V to 5.5 V −80 0.001 10 100 1000 10000 FREQUENCY (Hz) 100000 −90 10 Figure 13. THD+N vs Frequency Pout = 2 W, RL = 4 W 100 1000 10000 FREQUENCY (Hz) 100000 Figure 14. CMRR vs Frequency, Vipp = 1 Vpp, RL = 8 W http://onsemi.com 7 NCP2823 Series TYPICAL OPERATING CHARACTERISTICS 0 0 −10 −20 −20 −30 PSRR (dB) Vrip = 1 Vpp −60 −80 Vrip = 200 mVpp −40 −50 3.6 V −60 −80 100 2.5 V −70 −100 1000 10000 FREQUENCY (Hz) 100000 −90 VP = 4.2 V 10 Figure 15. CMRR vs Frequency vs VP 100 1000 10000 FREQUENCY (Hz) Figure 16. PSRR vs Frequency 0 −10 Input Floating −20 PSRR (dB) CMRR (dB) −40 −120 10 Input Grounded −30 −40 −50 −60 2.5 V 3.6 V VP = 4.2 V −70 −80 −90 10 100 1000 FREQUENCY (Hz) 10000 Figure 17. PSRR vs Frequency http://onsemi.com 8 100000 100000 NCP2823 Series DETAIL OPERATING DESCRIPTION General Description of this resistor is to eliminate any unwanted state changes when the Enable pin is floating. The basic structure of the NCP2823A/B is composed of one analog pre−amplifier, a pulse width modulator and an H−bridge CMOS power stage. The first stage is externally configurable with gain−setting resistor Ri and the internal fixed feedback resistor Rf (the closed−loop gain is fixed by the ratios of these resistors). The load is driven differentially through two output stages. The differential PWM output signal is a digital image of the analog audio input signal. The human ear is a band pass filter regarding acoustic waveforms, which the typical cut off values are 20 Hz and 20 kHz. Thus, the user will hear only the amplified audio input signal within the frequency range. The switching frequency and its harmonics are fully filtered. The inductive parasitic element of the loudspeaker helps to guarantee a superior distortion value. 30 kHz Built−in Low Pass Filter This filter allows connecting directly a DAC or a CODEC to the NCP2823 input without increasing the output noise by mixing frequency with the DAC/CODEC output frequency. Consequently, optimized operation with DACs or CODECs is guaranteed without additional external components. Power Supply Bypassing The NCP2823 requires a correct decoupling of the power supply in order to guarantee the best operation in terms of audio performances. To achieve these performances, it is necessary to place a 4.7 mF low ESR ceramic capacitor as close as possible to the PVDD pin in order to reduce high frequency transient spikes due to parasitic inductance (see Layout considerations). Power Amplifier The output PMOS and NMOS transistors of the amplifier have been designed to deliver a maximum output power before clipping. The channel resistance (Ron) of the NMOS and PMOS transistors is typically 0.3 W. Input Capacitors Cin Thanks to its fully differential architecture the NCP2823 does not require input capacitors. However, it is possible to use input capacitors when the differential source is not biased or in single ended configuration. In this case it is necessary to take into account the corner frequency which can influence the low frequency response of the NCP2823. The following equation will help choose the adequate input capacitor. Gain Selection The preamplifier stage amplifies the input signal. The gain is fully configurable by external resistors. The gain setting is given by the following equation: Av + 300 kW Ri (eq. 1) fC + Turn On and Turn Off Transitions 1 2 @ p @ Ri @ C in (eq. 2) Over Current Protection In order to reduce “pop and click” noises during transition, the output power in the load must not be established or cutoff suddenly. When logic high is applied to the Enable pin, the internal biasing voltage rises quickly and, 4 ms later, once the output DC level is around the common mode voltage, the gain is established slowly (5.0 ms). Thus, the total turn on time to get full power to the load is 7.4 ms (typical). The device has the same behavior when it is turned−off by a logic low on the Enable pin. No power is delivered to the load 4 ms after a falling edge on the shutdown pin. Due to the fast turn on and off times, the shutdown signal can be used as a mute signal as well. This protection allows detecting an over current in the H−Bridge. When the current is higher than 2A for the NCP2823B or 1A for the NCP2823A, the H−Bridge is positioned in high impedance. When the short circuit is removed or the current is lower, the NCP2823 goes back to normal operation. This protection avoids over current due to a bad assembly (Output shorted together, to VDD or to ground). Layout Recommendations For Efficiency and EMI standpoints, it is strongly recommended to use Power and ground plane in order to reduce parasitic resistance and inductance. For the same reason, it is recommended to keep the output traces short and well shielded in order to avoid them to act as antenna. Shutdown Function The device enters shutdown mode when the Enable signal is low. During the shutdown mode, the DC Shutdown current of the circuit does not exceed 1 mA. The NCP2823A/B has an internal resistor (RPLD = 250 kW) connected between GND and Enable. The purpose http://onsemi.com 9 NCP2823 Series The EMI Level is strongly dependent upon the application. However, ferrite beads placed close to the NCP2823 will reduce EMI radiation when it is needed. Ferrite value is strongly dependent upon the application. Figure 18. PCB Layout example ORDERING INFORMATION Package Shipping† WLCSP9 (Pb−Free) 3000 / Tape & Reel WLCSP9 (Backside Laminate Coating) (Pb−Free) 3000 / Tape & Reel NCP2823BFCT1G WLCSP9 (Pb−Free) 3000 / Tape & Reel NCP2823BFCT2G WLCSP9 (Pb−Free) 3000 / Tape & Reel Device NCP2823AFCT2G NCP2823AFCCT2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Demo Board Available: NCP2823AGEVB/D and NCP2823BGEVB/D evaluation board configure the device in typical application. http://onsemi.com 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 9 PIN FLIP−CHIP CASE 499AL−01 ISSUE O DATE 30 AUG 2004 1 SCALE 4:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL CROWNS OF SOLDER BALLS. −A− 4X D 0.10 C −B− E TOP VIEW A 0.10 C 0.05 C −C− GENERIC MARKING DIAGRAM* A2 A1 SIDE VIEW SEATING PLANE XXXX AYWW e C1 C B e A b 1 2 XXXX A Y WW G or G E1 3 0.05 C A B 0.03 C DOCUMENT NUMBER: DESCRIPTION: A3 A1 D1 9X MILLIMETERS MIN MAX 0.540 0.660 0.210 0.270 0.330 0.390 1.450 BSC 1.450 BSC 0.290 0.340 0.500 BSC 1.000 BSC 1.000 BSC DIM A A1 A2 D E b e D1 E1 BOTTOM VIEW 98AON19548D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 9 PIN FLIP−CHIP, 1.45 X 1.45 MM PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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