NCP302150MNTWG

Integrated Driver and MOSFET NCP302150 The NCP302150 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a single package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP302150 integrated solution greatly reduces package parasitics and board space compared to a discrete component solution. www.onsemi.com Features Capable of Average Currents up to 50 A Capable of Switching at Frequencies up to 2 MHz Compatible with 3.3 V or 5 V PWM Input Responds Properly to 3−level PWM Inputs Option for Zero Cross Detection with 3−level PWM Internal Bootstrap Diode Undervoltage Lockout Supports Intel® Power State 4 Thermal Warning Output Thermal Shutdown PQFN31 5X5, 0.5P CASE 483BR MARKING DIAGRAM NCP 302150 AWLYYWW A WL YY WW Applications • Notebook, Tablet PC and Ultrabook • Servers and Workstations, V−Core and Non−V−Core DC−DC Figure 1. Application Schematic 21 22 31 PWM 20 PGND GL VSW VSW VSW 23 VSW 19 30 SMOD# 18 29 VCC 17 28 CGND 16 VSW PGND VCCD 27 BOOT 33 GL THWN 26 nc 32 AGND DISB# 25 PHASE 1 24 VIN 2 VSW PGND 3 VSW CGND VOUT 4 VSW VSW PGND 15 SMOD# 14 PWM 5 VSW PGND BOOT 6 13 DISB# 7 12 PGND 8 11 VIN THWN SMOD from controller 10 VCCD VCC PWM from controller VIN VIN 5V DRVON from controller VIN 9 • • PINOUT DIAGRAM VSW • Converters Desktop and All−in−One Computers, V−Core and Non−V−Core DC−DC Converters High−Current DC−DC Point−of−Load Converters Small Form−Factor Voltage Regulator Modules = Assembly Location = Wafer Lot = Year = Work Week VSW • • • • • • • • • • ORDERING INFORMATION Device Package Shipping† NCP302150MNTWG PQFN31 3000 / Tape & Reel 5x5 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2018 March, 2021 − Rev. 4 1 Publication Order Number: NCP302150/D NCP302150 VCCD 29 VCC 5 BOOT 3 VCC SMOD# 2 PWM 1 8−11 VIN LEVEL SHIFT UVLO 16−26 VSW 7 PHASE DEAD TIME CONTROL SHUTDOWN TEMP WARNING SENSE DISB# 31 LEVEL SHIF 28 PGND THWN 30 12−15 PGND 27 GL AGND 32 CGND 33 GL ZCD CONTROL 4 Figure 2. Block Diagram Table 1. PIN LIST AND DESCRIPTION Pin No. Symbol 1 PWM 2 SMOD# 3 VCC 4, 32 CGND, AGND 5 BOOT 6 nc 7 PHASE 8−11 VIN 12−15, 28 PGND 16−26 VSW Description PWM Control Input and Zero Current Detection Enable Skip Mode pin. 3−state input (see Table 6): SMOD# = High ³ State of PWM determine whether the NCP302150 performs ZCD or not. SMOD# = Mid ³ Connects PWM to internal resistor divider placing a bias voltage on PWM pin. Otherwise, logic is equivalent to SMOD# in the high state. SMOD# = Low ³ Placing PWM into mid−state pulls GH and GL low without delay. There is an internal pull−up resistor to VCC on this pin. Control Power Supply Input Signal Ground (pin 4 and pad 32 are internally connected) Bootstrap Voltage Open pin (not used) Bootstrap Capacitor Return Conversion Supply Power Input Power Ground Switch Node Output 27, 33 GL 29 VCCD Low Side FET Gate Access (pin 27 and pad 33 are internally connected) Driver Power Supply Input 30 THWN Thermal warning indicator. This is an open−drain output. When the temperature at the driver die reaches TTHWN, this pin is pulled low. 31 DISB# Output disable pin. When this pin is pulled to a logic high level, the driver is enabled. There is an internal pull−down resistor on this pin. www.onsemi.com 2 NCP302150 Table 2. ABSOLUTE MAXIMUM RATINGS (Electrical Information − all signals referenced to PGND unless noted otherwise) Min Max Unit VCC, VCCD −0.3 6.5 V VIN −0.3 30 V BOOT (DC) −0.3 35 V BOOT (< 20 ns) −0.3 40 V BOOT to PHASE (DC) −0.3 6.5 V VSW, PHASE (DC) −0.3 30 V VSW, PHASE (< 20 ns) −5 35 V PHASE (< 5 ns) −15 35 V All Other Pins −0.3 VVCC + 0.3 V Pin Name / Parameter Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 3. THERMAL INFORMATION Rating Symbol Value Unit qJA 12.4 _C/W qJ−PCB 1.8 _C/W Operating Junction Temperature Range (Note 1) TJ −40 to +150 _C Operating Ambient Temperature Range TA −40 to +125 _C Maximum Storage Temperature Range TSTG −55 to +150 _C 10.5 W Thermal Resistance (under On Semi SPS Thermal Board) Maximum Power Dissipation Moisture Sensitivity Level MSL 1 1. The maximum package power dissipation must be observed. 2. JESD 51−5 (1S2P Direct−Attach Method) with 0 LFM 3. JESD 51−7 (1S2P Direct−Attach Method) with 0 LFM Table 4. RECOMMENDED OPERATING CONDITIONS Parameter Min Typ Max Unit VCC, VCCD 4.5 5.0 5.5 V VIN 4.5 12 20 V FSW = 1 MHz, VIN = 12 V, VOUT = 1.0 V, TA = 25_C 45 A Continuous Output Current FSW = 300 kHz, VIN = 12 V, VOUT = 1.0 V, TA = 25_C 50 A Peak Output Current Duration = 5 ms, Period = 10 ms 85 A 125 _C Supply Voltage Range Conversion Voltage Pin Name Conditions Junction Temperature −40 Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 3 NCP302150 Table 5. ELECTRICAL CHARACTERISTICS (VVCC = VVCCD = 5.0 V, VVIN = 12 V, VDISB# = 2.0 V, CVCCD = CVCC = 0.1 mF unless specified otherwise) Min/Max values are valid for the temperature range −40°C ≤ TJ ≤ 125°C unless noted otherwise, and are guaranteed by test, design or statistical correlation.) Parameter Symbol Conditions Min. Typ. Max. Unit 1 2 mA VCC SUPPLY CURRENT Operating DISB# = 5 V, PWM = 400 kHz − No switching DISB# = 5 V, PWM = 0 V − − 2 mA Disabled DISB# = 0 V, SMOD# = VCC − 0.4 1 mA 6 13 mA 2.89 − 3.37 V 150 − − mV DISB# = 0 V, SMOD# = GND UVLO Start Threshold VUVLO VCC rising UVLO Hysteresis VCCD SUPPLY CURRENT Enabled, No switching DISB# = 5 V, PWM = 0 V, VPHASED = 0 V − 175 300 mA Disabled DISB# = 0 V − 0.4 1 mA Operating DISB# = 5 V, PWM = 400 kHz − − 20 mA DISB# = 5 V, PWM = 400 kHz − 467 − kW DISB# INPUT Input Resistance Upper Threshold VUPPER DISB# = 5 V, PWM = 0 V − − 2.0 V Lower Threshold VLOWER DISB# = 5 V, PWM = 0 V 0.8 − − V Hysteresis DISB# = 5 V, PWM = 400 kHz 200 − − mV Enable Delay Time DISB# = 5 V, PWM = 0 V − − 40 ms Disable Delay Time DISB# = 5 V, PWM = 0 V − 21 50 ns SMOD# INPUT SMOD# Input Voltage High VSMOD_HI 2.65 − − V SMOD# Input Voltage Mid−state VSMOD#_MID 1.4 − 2.0 V SMOD# Input Voltage Low VSMOD_LO − − 0.7 V SMOD# Input Resistance RSMOD#_UP Pull−up resistance to VCC − 455 − kW SMOD# Propagation Delay, Falling TSMOD#_PD_F SMOD# = Low to GL = 90%, PWM = MID − 34 42 ns SMOD# Propagation Delay, Rising TSMOD#_PD_R SMOD# = High to GL = 10%, PWM = MID − 22 30 ns PWM INPUT Input Voltage High VPWM_HI 2.65 − − V Input Mid−state Voltage VPWM_MID 1.4 − 2.0 V Input Low Voltage VPWM_LO − − 0.7 V Input Resistance RPWM_HIZ SMOD# = VSMOD#_HI or VSMOD#_LO 10 − − MW Input Resistance RPWM_BIAS SMOD# = VSMOD#_MID − 68 − kW PWM Input Bias Voltage VPWM_BIAS SMOD# = VSMOD#_MID − 1.7 − V Non−overlap Delay, Leading Edge TNOL_L GL Falling = 1 V to GH−VSW Rising = 1 V − 13 − ns Non−overlap Delay, Trailing Edge TNOL_T GH−VSW Falling = 1 V to GL Rising = 1 V − 12 − ns PWM Propagation Delay, Rising TPWM,PD_R PWM = High to GL = 90% − 13 35 ns PWM Propagation Delay, Falling TPWM,PD_F PWM = Low to SW = 90% − 47 52 ns www.onsemi.com 4 NCP302150 Table 5. ELECTRICAL CHARACTERISTICS (VVCC = VVCCD = 5.0 V, VVIN = 12 V, VDISB# = 2.0 V, CVCCD = CVCC = 0.1 mF unless specified otherwise) Min/Max values are valid for the temperature range −40°C ≤ TJ ≤ 125°C unless noted otherwise, and are guaranteed by test, design or statistical correlation.) Parameter Symbol Conditions Min. Typ. Max. Unit Exiting PWM Mid−state Propagation Delay, Mid−to−Low TPWM_EXIT_L PWM = Mid−to−Low to GL = 10% − 14 25 ns Exiting PWM Mid−state Propagation Delay, Mid−to−High TPWM_EXIT_H PWM = Mid−to−High to SW = 10% − 13 25 ns ZD FUNCTION Zero Cross Detect Threshold VZCD − −6 − mV ZCD Blanking + Debounce Time tBLNK − 330 − ns − 150 − _C − 15 − _C − 180 − _C THERMAL WARNING & SHUTDOWN Thermal Warning Temperature TTHWN Temperature at Driver Die Thermal Warning Hysteresis TTHWN_HYS Thermal Shutdown Temperature TTHDN Thermal Shutdown Hysteresis TTHDN_HYS − 25 − _C THWM Open Drain Current ITHWN − − 5 mA Forward Bias Current = 2.0 mA − 380 − mV Source Current = 100 mA − 0.9 − W − 2 − A − 0.7 − W − 2.5 − A Temperature at Driver Die BOOSTSTRAP DIODE Forward Voltage HIGH−SIDE DRIVER Output Impedance, Sourcing RSOURCE_GH Output Sourcing Peak Current ISOURCE_GH Output Impedance, Sinking RSINK_GH Output Sinking Peak Current ISINK_GH Source Current = 100 mA LOW−SIDE DRIVER Output Impedance, Sourcing RSOURCE_GL Source Current = 100 mA − 0.9 − W Output Sourcing Peak Current ISOURCE_GL GL = 2.5 V − 2 − A Output Impedance, Sinking RSINK_GH Sink Current = 100 mA − 0.4 − W Output Sinking Peak Current ISINK_GL GL = 2.5 V − 4.5 − A GL Rise Time TR_GL GL = 10% to 90%, CLOAD = 3.0 nF − 12 − ns GL Fall Time TF_GL GL = 90% to 10%, CLOAD = 3.0 nF − 6 − ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Table 6. LOGIC TABLE INPUT TRUTH TABLE DISB# PWM SMOD# (Note 4) GH (not a pin) GL L X X L L H H X H L H L X L H H MID H or MID L ZCD (Note 5) H MID L L L (Note 6) 4. PWM input is driven to mid−state with internal divider resistors when SMOD# is driven to mid−state and PWM input is undriven externally. 5. GL goes low following 80 ns de−bounce time, 250 ns blanking time and then SW exceeding ZCD threshold. 6. There is no delay before GL goes low. www.onsemi.com 5 NCP302150 TYPICAL PERFORMANCE CHARACTERISTICS Test Conditions: VIN = 12 V, VCC = VCCD = 5 V, VOUT = 1 V, LOUT = 250 nH, TA = 25 °C and natural convection cooling, unless otherwise noted. Figure 3. Efficiency − 19 V Input, 1.0 V Output Figure 4. Efficiency − 19 V Input, 1.8 V Output Figure 5. Efficiency − 12 V Input, 1.0 V Output Figure 6. Efficiency − 12 V Input, 1.8 V Output Figure 7. Power losses vs. Output Current, 12Vin Figure 8. Power losses vs. Output Current, 19Vin www.onsemi.com 6 NCP302150 TYPICAL PERFORMANCE CHARACTERISTICS Test Conditions: VIN = 12 V, VCC = PVCC = 5 V, VOUT = 1 V, LOUT = 250 nH, TA = 25 °C and natural convection cooling, unless otherwise noted. Figure 9. Power Loss vs. Switching Frequency Figure 10. Power Loss vs. Input Voltage Figure 11. Power Loss vs. Driver Supply Voltage Figure 12. Power Loss vs. Output Voltage Figure 13. Driver Supply Current vs. Switching Frequency Figure 14. Driver Supply Current vs. Driver Supply Voltage www.onsemi.com 7 NCP302150 Theory of Operation Safety Timer and Overlap Protection Circuit The NCP302150 is an integrated driver and MOSFET module designed for use in a synchronous buck converter topology. The NCP302150 supports numerous application control definitions including ZCD (Zero Current Detect) and alternately PWM Tristate control. A PWM input signal is required to control the drive signals to the high−side and low−side integrated MOSFETs. It is important to avoid cross−conduction of the two MOSFETS which could result in a decrease in the power conversion efficiency or damage to the device. The NCP302150 prevents cross−conduction by monitoring the status of the MOSFETs and applying the appropriate amount of non−overlap (NOL) time (the time between the turn−off of one MOSFET and the turn−on of the other MOSFET). When the PWM input pin is driven high, the gate of the low−side MOSFET (LSGATE) goes low after a propagation delay (tpdlGL). The time it takes for the low−side MOSFET to turn off is dependent on the total charge on the low−side MOSFET gate. The NCP302150 monitors the gate voltage of both MOSFETs and the switch node voltage to determine the conduction status of the MOSFETs. Once the low−side MOSFET is turned off an internal timer delays (tpdhGH) the turn−on of the high−side MOSFET. When the PWM input pin goes low, the gate of the high−side MOSFET (HSGATE) goes low after the propagation delay (tpdlGH). The time to turn off the high−side MOSFET (tfGH) is dependent on the total gate charge of the high−side MOSFET. A timer is triggered once the high−side MOSFET stops conducting, to delay (tpdhGL) the turn−on of the low−side MOSFET. Low−Side Driver The low−side driver drives an internal, ground−referenced low−RDS(on) N−Channel MOSFET. The voltage supply for the low−side driver is internally connected to the VCCD and PGND pins. High−Side Driver The high−side driver drives an internal, floating low−RDS(on) N−channel MOSFET. The gate voltage for the high side driver is developed by a bootstrap circuit referenced to Switch Node (VSW and PHASE) pins. The bootstrap circuit is comprised of the integrated diode and an external bootstrap capacitor and resistor. When the NCP302150 is starting up, the VSW pin is at ground, allowing the bootstrap capacitor to charge up to VCCD through the bootstrap diode (See Figure 1). When the PWM input is driven high, the high−side driver turns on the high−side MOSFET using the stored charge of the bootstrap capacitor. As the high−side MOSFET turns on, the voltage at the VSW and PHASE pins rises. When the high−side MOSFET is fully turned on, the switch node settles to VIN and the BST pin settles to VIN + VCCD (excluding parasitic ringing). Zero Current Detect The bootstrap circuit relies on an external charge storage capacitor (CBST) and an integrated diode to provide current to the HS Driver. A multi−layer ceramic capacitor (MLCC) with a value greater than 100 nF should be used as the bootstrap capacitor. An optional 1 to 4 W resistor in series with the bootstrap capacitor decreases the VSW overshoot. The Zero Current Detect PWM (ZCD_PWM) mode is enabled when SMOD# is high (see Tables 6 and 8). With PWM set to > VPWM_HI, GL goes low and GH goes high after the non−overlap delay. When PWM is driven to < VPWM_HI and to > VPWM_LO, GL goes high after the non−overlap delay, and stays high for the duration of the ZCD blanking timer (TZCD_BLANK) and an 80 ns de−bounce timer. Once this timer expires, VSW is monitored for zero current detection, and GL is pulled low once zero current is detected. The threshold on VSW to determine zero current undergoes an auto−calibration cycle every time DISB# is brought from low to high. This auto−calibration cycle typically takes 25 ms to complete. Power Supply Decoupling PWM Input Bootstrap Circuit The PWM Input pin is a tri−state input used to control the HS MOSFET ON/OFF state. It also determines the state of the LS MOSFET. See Table 6 for logic operation. The PWM in some cases must operate with frequency programming resistances to ground. These resistances can range from 10 kW to 300 kW depending on the application. When SMOD# is set to > VSMOD#_HI or to < VSMOD#_LO, the input impedance to the PWM input is very high in order to avoid interferences with controllers that must use programming resistances on the PWM pin. If SMOD# is set to < VSMOD#_HI and > VSMOD#_LO (Mid−State), the PWM pin undriven default voltage is set to Mid−State with internal divider resistances. The NCP302150 sources relatively large currents into the MOSFET gates. In order to maintain a constant and stable supply voltage (VCCD) a low−ESR capacitor should be placed near the power and ground pins. A multi−layer ceramic capacitor (MLCC) between 1 mF and 4.7 mF is typically used. A separate supply pin (VCC) is used to power the analog and digital circuits within the driver. A 1 mF ceramic capacitor should be placed on this pin in close proximity to the NCP302150. It is good practice to separate the VCC and VCCD decoupling capacitors with a resistor (10 W typical) to avoid coupling driver noise to the analog and digital circuits that control the driver function (See Figure 1). www.onsemi.com 8 NCP302150 Disable Input (DISB#) Thermal Warning/Thermal Shutdown Output The DISB# pin is used to disable the GH to the High−Side FET to prevent power transfer. The pin has a pull−down resistance to force a disabled state when it is left unconnected. DISB# can be driven from the output of a logic device or set high with a pull−up resistance to VCC. The THWN pin is an open drain output. When the temperature of the driver exceeds TTHWN, the THWN pin is pulled low indicating a thermal warning. At this point, the part continues to function normally. When the temperature drops TTHWN_HYS below TTHWN, the THWN pin goes high. If the driver temperature exceeds TTHDN, the part enters thermal shutdown and turns off both MOSFETs. Once the temperature falls TTHDN_HYS below TTHDN, the part resumes normal operation. VCC Undervoltage Lockout The VCC pin is monitored by an Undervoltage Lockout Circuit (UVLO). VCC voltage above the rising threshold enables the NCP302150. Skip Mode Input (SMOD#) The SMOD# tri−state input pin has an internal pull−up resistance to VCC. When driven high, the SMOD# pin enables the low side synchronous MOSFET to operate independently of the internal ZCD function. When the SMOD# pin is set low during the PWM cycle it disables the low side MOSFET to allow discontinuous mode operation. The NCP302150 has the capability of internally connecting a resistor divider to the PWM pin. To engage this mode, SMOD# needs to be placed into mid−state. While in SMOD# mid−state, the IC logic is equivalent to SMOD# being in the high state. Table 7. UVLO/DISB# LOGIC TABLE UVLO DISB# Driver State L X Disabled (GH = GL = 0) H L Disabled (GH = GL = 0) H H Enabled (See Table 1) H Open Disabled (GH = GL = 0) NOTE: If the Zero Current Detect circuit detects zero current after the ZCD Wait timer period, the GL is driven low by the Zero Current Detect signal. If the Zero Current Detect circuit detects zero current before the ZCD Wait timer period expires, the Zero Current detect signal is ignored and the GL is driven low at the end of the ZCD Wait timer period. NOTE: If the SMOD# input is driven low at any time after the GL has been driven high, the SMOD# Falling edge triggers the GL to go low. If the SMOD# input is driven low while the GH is high, the SMOD# input is ignored. www.onsemi.com 9 NCP302150 Inductor Current PWM GH SMOD# triggered GL SMOD# Figure 15. SMOD# Timing Diagram NOTE: If the SMOD# input is driven low at any time after the GL has been driven high, the SMOD# Falling edge triggers the GL to go low. If the SMOD# input is driven low while the GH is high, the SMOD# input is ignored. For Use with Controllers with 3−State PWM Controllers Detection Capability Table 8. LOGIC TABLE − 3−STATE PWM CONTROLLERS WITH NO ZCD PWM SMOD# GH (not a pin) GL H H ON OFF M H OFF ZCD L H OFF ON and low states. To enter into DCM, PWM needs to be switched to the mid−state. Whenever PWM transitions to mid−state, GH turns off and GL turns on. GL stays on for the duration of the de−bounce timer and ZCD blanking timers. Once these timers expire, the NCP302150 monitors the SW voltage and turns GL off when SW exceeds the ZCD threshold voltage. By turning off the LS FET, the body diode of the LS FET allows any positive current to go to zero but prevents negative current from conducting. This section describes operation with controllers that are capable of 3 states in their PWM output and relies on the NCP302150 to conduct zero current detection during discontinuous conduction mode (DCM). The SMOD# pin needs to either be set to 5 V or left disconnected. The NCP302150 has an internal pull−up resistor that connects to VCC that sets SMOD# to the logic high state if this pin is disconnected. To operate the buck converter in continuous conduction mode (CCM), PWM needs to switch between the logic high www.onsemi.com 10 NCP302150 Figure 16. Timing Diagram − 3−state PWM Controller, No ZCD FOR USE WITH CONTROLLERS WITH 3−STATE PWM CONTROLLERS DETECTION CAPABILITY: Table 9. LOGIC TABLE − 3−STATE PWM CONTROLLERS WITH ZCD PWM SMOD# GH (not a pin) GL H L ON OFF M L OFF OFF L L OFF ON This section describes operation with controllers that are capable of 3 PWM output levels and have zero current detection during discontinuous conduction mode (DCM). The SMOD# pin needs to be pulled low (below and low states. During DCM, the controller is responsible for detecting when zero current has occurred, and then notifying the NCP302150 to turn off the LS FET. When the controller detects zero current, it needs to set PWM to mid−state, which causes the NCP302150 to pull both GH and GL to their off states without delay. VSMOD#_LO). To operate the buck converter in continuous conduction mode (CCM), PWM needs to switch between the logic high www.onsemi.com 11 NCP302150 SMOD# = Low Controller detects zero current → Sets PWM to mid−state. PWM in mid−state pulls GL low. Figure 17. Timing Diagram − 3−state PWM Controller, with ZCD Figure 18. Top Copper Layer www.onsemi.com 12 NCP302150 Figure 19. Bottom Copper Layer www.onsemi.com 13 NCP302150 RECOMMENDED PCB FOOTPRINT (Option 1) LAND PATTERN RECOMMENDATION RECOMMENDED MOUNTING FOOTPRINT For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 14 NCP302150 RECOMMENDED PCB FOOTPRINT (Option 2) LAND PATTERN RECOMMENDATION RECOMMENDED MOUNTING FOOTPRINT For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 15 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PQFN31 5X5, 0.5P CASE 483BR ISSUE A DATE 24 APR 2020 SCALE 2.5:1 GENERIC MARKING DIAGRAM* XXXXXXXX XXXXXXXX AWLYYWWG G DOCUMENT NUMBER: DESCRIPTION: XXXX A WL YY WW G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) 98AON13680G PQFN31 5X5, 0.5P *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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