NCP330MUTBG

NCP330 Soft-Start Controlled Load Switch The NCP330 is a low Ron N−channel MOSFET controlled by a soft−start sequence of 2 ms for mobile applications. The very low RDS(on) allows system supplying or battery charging up to DC 3A.The device is enable automatically if a Power Supply is connected on Vin pin (active High) and maintained off if no Vin (internal pull down). Due to a current consumption optimization, leakage current is drastically decreased from the battery connected to the device, allowing long battery life. Features • • • • • • • • • • • • 1.8 V − 5.5 V Operating Range 30 mW N−MOSFET DC Current Up to 3 A Peak Current Up to 5 A Built−in Soft−Start 2 ms Reverse Voltage Protection Active High with Integrated Bridge Compliance to IEC61000−4−2 (Level 4) 8.0 kV (Contact) 15 kV (Air) ESD Ratings: Machine Model = B Human Body Model = 3 mDFN4 1.2 x 1.6 mm NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable This is a Pb−Free Device www.onsemi.com MARKING DIAGRAM 1 3A M UDFN4 CASE 517CE 3A M = Specific Device Code = Date Code PINOUT DIAGRAM IN OUT PAD1 GND EN (Top View) Typical Applications • • • • • Mobile Phones Tablets Digital Cameras GPS Computers Vbat 1 mF ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. IN OUT NCP330 EN 1 mF GND EN USB Port VBUS D+ D− GND 4 IN CMIC OUT SBC Charger SYSTEM Supply HS Monitoring USB Signal Routing Accessory Detection and ID I@C Figure 1. Typical Application Circuit © Semiconductor Components Industries, LLC, 2015 April, 2015 − Rev. 2 1 Publication Order Number: NCP330/D NCP330 PIN FUNCTION DESCRIPTION Pin Name Pin Number Type Description IN 1 POWER Power−switch input voltage; connect a 1 mF or greater ceramic capacitor from IN to GND as close as possible to the IC. GND 2 POWER Ground connection; EN 3 INPUT OUT 4 OUTPUT Power−switch output; connect a 1 mF ceramic capacitor from OUT to GND as close as possible to the IC is recommended. POWER Exposed pad can be connected to GND plane for dissipation purpose or any other thermal plane. PAD1 Enable input, logic high turns on power switch. BLOCK DIAGRAM IN: Pin1 OUT: Pin 4 1 mF Gate driver and soft start control Battery VREF Charge Pump EN: 3 EN block 2 Figure 2. Block Diagram www.onsemi.com 2 NCP330 MAXIMUM RATINGS Rating Symbol Value Unit VEN , VIN , VOUT −0.3 to + 7.0 V From IN to OUT Pins: Input/Output VIN , VOUT −7.0 to + 7.0 V ESD Withstand Voltage (IEC 61000−4−2) (Note 1) (IN and OUT when bypassed with 1.0 mF capacitor minimum) ESD IEC 15 Air, 8 contact kV Human Body Model (HBM) ESD Rating are (Notes 2 and 3) ESD HBM 4000 V Machine Model (MM) ESD Rating are (Notes 2 and 3) ESD MM 200 V LU 100 TJ −40 to + 125 °C Storage Temperature Range TSTG −40 to + 150 °C Moisture Sensitivity (Note 5) MSL Level 1 IN, OUT, EN, Pins: Latch−up protection (Note 4) − Pins IN, OUT, EN mA Maximum Junction Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Guaranteed by design. 2. According to JEDEC standard JESD22−A108. 3. This device series contains ESD protection and passes the following tests: Human Body Model (HBM) ±2.0 kV per JEDEC standard: JESD22−A114 for all pins. Machine Model (MM) ±200 V per JEDEC standard: JESD22−A115 for all pins. 4. Latch up Current Maximum Rating: ±100 mA per JEDEC standard: JESD78 class II. 5. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020. RECOMMENDED OPERATING CONDITIONS Symbol Parameter VIN Operational Power Supply VEN Enable Voltage Conditions Min Typ Max Unit 1.8 5.5 V 0 5.5 TA Ambient Temperature Range − 40 25 + 85 °C TJ Junction Temperature Range − 40 25 + 125 °C CIN Decoupling input capacitor COUT Decoupling output capacitor RqJA Thermal Resistance Junction to Air IOUT Maximum DC current I peak PD Maximum Peak current Power Dissipation Rating (Note 7) USB port per Hub UDFN−4 package (Note 6) 1 mF 1 mF °C/W 170 UDFN−4 package 3 1 ms at 217 Hz (GSM calibration) 5 TA ≤ 25°C UDFN−4 package 0.58 TA = 85°C UDFN−4 package 0.225 A A W Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 6. The RqJA is dependent of the PCB heat dissipation. 7. The maximum power dissipation (PD) is given by the following formula: PD + www.onsemi.com 3 T JMAX * T A R qJA NCP330 ELECTRICAL CHARACTERISTICS Min & Max Limits apply for TA between −40°C to +85°C and TJ up to + 125 °C for VIN between 1.8 V to 5.5 V (Unless otherwise noted). Typical values are referenced to TA = + 25 °C and VIN = 5 V. Symbol Parameter Conditions Min Typ Max Unit POWER SWITCH Static drain−source on−state resistance VIN = 3 V, VIN = 5 V TR Output rise time VIN = 5 V CLOAD = 1 mF, RLOAD = 125 W (Note 8) TF Output fall time VIN = 5 V CLOAD = 100 mF, RLOAD = 40 W (Note 8) Ton Gate turn on VIN = 5 V From Vin applied to VOUT = 10% of fully on VIN = 3 V From Vin applied to VOUT = 10% of fully on (Note 9) RDS(on) TJ = 25°C 26 −40°C < TJ < 125°C mW 50 0.5 2 4 4 0.5 2 ms ms 4 ms 3 ENABLE INPUT EN VIH High−level input voltage VIL Low−level input voltage Rpd En pull−down resistor Rpu En pull−up resistor 1.15 V 0.85 V 1 MW 1.5 MW REVERSE−LEAKAGE PROTECTION IREV Reverse−current protection VIN = 0 V, Vout = 4.2 V (part disable), TJ = 25°C 0.15 1 mA No load 100 200 mA QUIESCENT CURRENT Iq Current consumption Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 8. Parameters are guaranteed for CLOAD and RLOAD connected to the OUT pin with respect to the ground. 9. Guaranteed by characterization. www.onsemi.com 4 NCP330 TYPICAL CHARACTERISTICS 0.35 TA = 85°C 120 IREV, REVERSE CURRENT (mA) Iq, SUPPLY CURRENT (mA) 140 TA = 25°C 100 TA = −40°C 80 60 40 20 0 0.30 0.25 TA = 85°C 0.20 0.15 TA = −40°C 0.10 0.05 TA = 25°C 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1.5 5.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VIN, INPUT VOLTAGE (V) VOUT, OUTPUT VOLTAGE (V) Figure 3. Supply Current vs. Voltage Figure 4. Reverse Current vs. Output Voltage 50 50 45 45 40 40 IOUT = 2 A RDS(on) (mW) RDS(on) (mW) IOUT = 3 A IOUT = 3 A 35 IOUT = 2 A 30 IOUT = 1 A IOUT = 0.5 A 25 IOUT = 1 A 30 25 20 20 1.8 3.0 4.2 5.4 1.8 3.0 4.2 5.4 VIN, INPUT VOLTAGE (V) VIN, INPUT VOLTAGE (V) Figure 5. RDS(on) vs. VIN Voltage at 255C Figure 6. RDS(on) vs. VIN Voltage at 855C 50 50 45 45 40 40 RDS(on) (mW) RDS(on) (mW) IOUT = 0.5 A 35 35 30 IOUT = 2 A VIN = 1.8 V 35 VIN = 3.0 V 30 VIN = 5.5 V IOUT = 3 A 25 VIN = 5.0 V 25 IOUT = 1 A 20 1.8 3.0 IOUT = 0.5 A 4.2 20 5.4 0 0.5 1.0 1.5 2.0 2.5 3.0 VIN, INPUT VOLTAGE (V) IOUT, OUTPUT CURRENT (A) Figure 7. RDS(on) vs. VIN Voltage at −405C Figure 8. RDS(on) vs. IOUT at 255C www.onsemi.com 5 3.5 NCP330 TYPICAL CHARACTERISTICS 50 TJ, JUNCTION TEMPERATURE (°C) 90 RDS(on) (mW) 45 40 35 30 25 20 80 70 60 VIN = 3.0 V 50 VIN = 5.5 V 40 VIN = 5.0 V 30 20 10 0 0 0.5 1.0 2.0 1.5 2.5 3.0 3.5 0 0.5 1.0 1.5 2.0 2.5 IOUT, OUTPUT CURRENT (A) IOUT, OUTPUT CURRENT (A) Figure 9. RDS(on) vs. IOUT at 855C Figure 10. Junction Temperature vs. IOUT 1.02 EN PIN THRESHOLD (V) 1.01 VIH vs. VIN 1.00 VIL vs. VIN 0.99 0.98 0.97 0.96 0.95 0.94 0 1 2 3 4 5 6 VIN, INPUT VOLTAGE (V) Figure 11. Logic Threshold vs. VIN Figure 12. TON Time on 75 mA Load Figure 13. TOFF Time on 75 mA Load Figure 14. TON Time on 800 mA Load www.onsemi.com 6 3.0 NCP330 TYPICAL CHARACTERISTICS Figure 15. TOFF Time on 800 mA Load Figure 16. TON Time on 2 A Load Figure 17. TOFF Time on 2.3 A Load www.onsemi.com 7 NCP330 FUNCTIONAL DESCRIPTION Overview Blocking Control The NCP330 is a high side N−channel MOSFET power distribution switch designed to connect external voltage directly to the system. The high side MOSFET is automatically turned on if the Vin voltage is applied thanks to internal pull up connected between Vin and EN pin. The turned off is obtained by Vin removal. Due to the soft start circuitry, NCP330 is able to limit large voltage surges. The blocking control circuitry switches the bulk of the power NMOS. When the part is off (No VIN or EN tied to GND externally) , the body diode limits the leakage current IREV from OUT to IN. In this mode, anode of the body diode is connected to IN pin and cathode is connected to OUT pin. In operating condition, anode of the body diode is connected to OUT pin and cathode is connected to IN pin preventing the discharge of the power supply. Enable input Enable pin is an active high. The part is off when Vin is not present, limiting current consumption from battery to OUT pin. In the other side, the part is automatically turned on when VIN is applied. Cin Capacitor A IN capacitor, 1 mF, at least, capacitor must be placed as close as possible the part to be Compliant with IEC61000−4−2 (Level 4). Cout Capacitor Depending on the sinking current during system start up and system turn off, a capacitor must be placed on the output. A 1 mF is strongly recommended but can be decreased down to 100 nF if the above two sequences are well controlled and parasitic inductance connected on the Vout line is negligible. APPLICATION INFORMATION Power Dissipation PCB Recommendations The device’s junction temperature depends on different contributor factor such as board layout, ambient temperature, device environment, etc... Yet, the main contributor in term of junction temperature is the power dissipation of the power MOSFET. Assuming this, the power dissipation and the junction temperature in normal mode can be calculated with the following equations: The NCP330 integrates an up to 3 A rated NMOS FET, and the PCB design rules must be respected to properly evacuate the heat out of the silicon. The mDFN4 PAD1 must be connected to ground plane to increase the heat transfer if necessary. By increasing PCB area, the RqJA of the package can be decreased, allowing higher power dissipation. P D + R DS(on) ǒIOUTǓ 2 PD = Power dissipation (W) RDS(on) IOUT = Power MOSFET on resistance (W) = Output current (A) TJ + PD R qJA ) T A TJ = Junction temperature (°C RqJA TA = Package thermal resistance (°C/W) = Ambient temperature (°C) ORDERING INFORMATION Marking Package Shipping† NCP330MUTBG 3A 3V UDFN4 (Pb−Free) 3000 / Tape & Reel NCV330MUTBG* Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN4 1.2x1.6, 0.5P CASE 517CE ISSUE B 1 SCALE 4:1 L L A B D L1 ÉÉ ÉÉ PIN ONE REFERENCE 2X DETAIL A ALTERNATE TERMINAL CONSTRUCTIONS E 0.05 C 2X ÉÉ ÉÉ 0.05 C TOP VIEW EXPOSED Cu (A3) DETAIL B A 0.05 C MOLD CMPD DETAIL B ALTERNATE CONSTRUCTION 0.05 C SIDE VIEW A1 C SEATING PLANE D2 DETAIL A 1 b 0.05 4X 2 M NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 mm FROM THE TERMINAL TIPS. 4. PACKAGE DIMENSIONS EXCLUSIVE OF BURRS AND MOLD FLASH. DIM A A1 A3 b D D2 E E2 e L L1 MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.05 0.00 −−− 0.13 REF 0.35 0.25 0.30 1.20 BSC 0.96 0.76 0.86 1.60 BSC 0.60 0.40 0.50 0.50 BSC 0.40 0.20 0.30 −−− −−− 0.15 GENERIC MARKING DIAGRAM* XX M NOTE 3 E2 e C A B DATE 03 APR 2012 4 3 4X e/2 L BOTTOM VIEW RECOMMENDED MOUNTING FOOTPRINT* 0.86 XX = Specific Device Code M = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 4X 0.25 PACKAGE OUTLINE 1.90 0.50 1 0.50 PITCH 4X 0.45 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON66552E UDFN4, 1.2X1.6, 0.5P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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