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NCP3335ADM330R2G

NCP3335ADM330R2G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TSSOP8

  • 描述:

    IC REG LINEAR 3.3V 500MA MICRO8

  • 数据手册
  • 价格&库存
NCP3335ADM330R2G 数据手册
NCP3335A Low Dropout Regulator Ultra High Accuracy, Low Iq 500 mA http://onsemi.com The NCP3335A is a high performance, low dropout regulator with accuracy of ±0.9% over line and load. This device features ultra−low quiescent current and noise which encompasses all necessary characteristics demanded by today’s consumer electronics. This unique device is guaranteed to be stable without a minimum load current requirement and stable with any type of capacitor as small as 1.0 mF. The NCP3335A also comes equipped with sense and noise reduction pins to increase the overall utility of the device and offers reverse bias protection. Micro8t DM SUFFIX CASE 846A DFN10 MN SUFFIX CASE 485C Features • • • • • • • • • • • • • High Accuracy Over Line and Load (±0.9% at 25°C) Ultra−Low Dropout Voltage at Full Load (260 mV typ.) No Minimum Output Current Required for Stability Low Noise (31 mVrms w/10 nF Cnr and 51 mVrms w/out Cnr) Low Shutdown Current (0.07 mA) Reverse Bias Protected 2.6 V to 12 V Supply Range Thermal Shutdown Protection Current Limitation Requires Only 1.0 mF Output Capacitance for Stability Stable with Any Type of Capacitor (including MLCC) Available in 1.5 V, 1.8 V, 2.5 V, 2.8 V, 2.85 V, 3.0 V, 3.3 V, 5.0 V and Adjustable Output Voltages These are Pb−Free Devices Applications • • • • • • • • PCMCIA Card Cellular Phones Camcoders and Cameras Networking Systems, DSL/Cable Modems Cable Set−Top Box MP3/CD Players DSP Supply Displays and Monitors © Semiconductor Components Industries, LLC, 2013 October, 2019 − Rev. 5 MARKING DIAGRAMS 8 XXXX AYWG G 1 1 3335A XXX ALYWG G Fixed Version Pin 1, 2. Vout 3. Sense 4. GND 5. NR 6. SD 7, 8. Vin Adj Version Pin 1, 2. Vout 3. Adj 4. GND 5. NR 6. SD 7, 8. Vin Fixed Version Pin 1, 2. Vout 3. Sense 4. GND 5, 6. NC 7. NR 8. SD 9, 10. Vin Adj Version Pin 1, 2. Vout 3. Adj 4. GND 5, 6. NC 7. NR 8. SD 9, 10. Vin XXX = Specific Device Marking A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 19 of this data sheet. 1 Publication Order Number: NCP3335A/D NCP3335A Cnr (Optional) 5 NR SENSE 7 8 Vin IN OUT IN OUT + Cin 1.0 mF 2 Vout 1 Cout 1.0 mF GND SD 6 3 4 + ON OFF Figure 1. Typical Fixed Version Application Schematic (Micro8 Package) Cnr 10 nF (Optional) 5 NR OUT 7 8 Vin Cin 1.0 mF OUT IN ADJ IN + SD 6 2 1 3 R1 CADJ 68 pF Vout Cout 1.0 mF + R2 GND 4 ON OFF Figure 2. Typical Adjustable Version Application Schematic (Micro8 Package) http://onsemi.com 2 NCP3335A Figure 3. Block Diagram, Fixed Output Version Figure 4. Block Diagram, Adjustable Output Version http://onsemi.com 3 NCP3335A PIN FUNCTION DESCRIPTION Fixed Version Micro8 Pin No. DFN10 Pin No. Pin Name 1, 2 1, 2 Vout 3 3 SENSE 4 4 GND 5 7 NR Noise Reduction Pin. This is an optional pin used to further reduce noise. Description Regulated output voltage. Bypass to ground with Cout w 1.0 mF. For output voltage sensing, connect to Pins 1 and 2. Power Supply Ground 6 8 SD Shutdown pin. When not in use, this pin should be connected to the input pin. 7, 8 9, 10 Vin Power Supply Input Voltage − 5, 6 NC Not Connected − EPAD EPAD Exposed thermal pad should be connected to ground. Adjustable Version 1, 2 1, 2 Vout Regulated output voltage. Bypass to ground with Cout w 1.0 mF. 3 3 Adj Adjustable pin; reference voltage = 1.25 V. 4 4 GND 5 7 NR Noise Reduction Pin. This is an optional pin used to further reduce noise. 6 8 SD Shutdown pin. When not in use, this pin should be connected to the input pin. 7, 8 9, 10 Vin Power Supply Input Voltage − 5, 6 NC Not Connected − EPAD EPAD Power Supply Ground Exposed thermal pad should be connected to ground. MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage Vin −0.3 to +16 V Output Voltage Vout −0.3 to Vin +0.3 or 10 V* V Shutdown Pin Voltage Vsh −0.3 to +16 V Junction Temperature Range TJ −40 to +150 °C Storage Temperature Range Tstg −50 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NOTE: This device series contains ESD protection and exceeds the following tests: Human Body Model (HBM) JESD 22−A114−B Machine Model (MM) JESD 22−A115−A *Which ever is less. Reverse bias protection feature valid only if Vout − Vin ≤ 7 V. THERMAL CHARACTERISTICS Test Conditions (Typical Value) Min Pad Board (Note 1) 1, Pad Board (Note 1) Unit Junction−to−Air, qJA 264 174 °C/W Junction−to−Pin, yJL2 110 100 °C/W Junction−to−Air, qJA 215 66 °C/W Junction−to−Pin, yJL2 55 17 °C/W Characteristic Micro 8 10 Lead DFN EPad 1. As mounted on a 35 x 35 x 1.5 mm FR4 Substrate, with a single layer of a specified copper area of 2 oz (0.07 mm thick) copper traces and heat spreading area. JEDEC 51 specifications for a low and high conductivity test board recommend a 2 oz copper thickness. Test conditions are under natural convection or zero air flow. http://onsemi.com 4 NCP3335A ELECTRICAL CHARACTERISTICS – 5.0 V (Vout = 5.0 V typical, Vin = 5.4 V, TA = −40°C to +85°C, unless otherwise noted, Note 2.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 5.4 V to 9.0 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.9% 4.955 5.0 +0.9% 5.045 V Output Voltage (Accuracy) Vin = 5.4 V to 9.0 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.4% 4.930 5.0 +1.4% 5.070 V Output Voltage (Accuracy) Vin = 5.4 V to 9.0 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.5% 4.925 5.0 +1.5% 5.075 V Line Regulation Vin = 5.4 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 5.4 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown TJ Ground Current In Regulation Iload = 500 mA (Note 3) Iload = 300 mA (Note 3) Iload = 50 mA Iload = 0.1 mA 340 230 110 10 500 700 mV 830 mA 930 mA 160 °C IGND In Dropout Vin = 4.9 V, Iload = 0.1 mA In Shutdown SD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Shutdown Threshold Voltage ON Threshold Voltage OFF 9.0 4.6 0.8 − 14 7.5 2.5 190 mA − 500 mA 0.07 1.0 mA 93 58 2.0 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mA mVrms mVrms 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 5.0 V) IOUTR 10 mA 2. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 3. TA must be greater than 0°C. http://onsemi.com 5 NCP3335A ELECTRICAL CHARACTERISTICS – 3.3 V (Vout = 3.3 V typical, Vin = 3.7 V, TA = −40°C to +85°C, unless otherwise noted, Note 4.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.9% 3.270 3.3 +0.9% 3.330 V Output Voltage (Accuracy) Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.4% 3.254 3.3 +1.4% 3.346 V Output Voltage (Accuracy) Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.5% 3.250 3.3 +1.5% 3.350 V Line Regulation Vin = 3.7 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 3.7 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown TJ Ground Current In Regulation Iload = 500 mA (Note 5) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA 340 230 110 10 500 700 mV 800 mA 900 mA 160 °C IGND In Dropout Vin = 3.2 V, Iload = 0.1 mA In Shutdown SD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Shutdown Threshold Voltage ON Threshold Voltage OFF 9.0 4.6 0.8 − 14 7.5 2.5 190 mA − 500 mA 0.07 1.0 mA 69 46 2.0 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mA mVrms mVrms 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 3.3 V) IOUTR 10 mA 4. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 5. TA must be greater than 0°C. http://onsemi.com 6 NCP3335A ELECTRICAL CHARACTERISTICS – 3.0 V (Vout = 3.0 V typical, Vin = 3.4 V, TA = −40°C to +85°C, unless otherwise noted, Note 6.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 3.4 V to 7.0 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.9% 2.973 3.0 +0.9% 3.027 V Output Voltage (Accuracy) Vin = 3.4 V to 7.0 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.4% 2.958 3.0 +1.4% 3.042 V Output Voltage (Accuracy) Vin = 3.4 V to 7.0 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.5% 2.955 3.0 +1.5% 3.045 V Line Regulation Vin = 3.4 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 3.4 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown TJ Ground Current In Regulation Iload = 500 mA (Note 7) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA 340 230 110 10 500 700 800 mA 900 mA 160 °C IGND In Dropout Vin = 2.9 V, Iload = 0.1 mA In Shutdown SD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Shutdown Threshold Voltage ON Threshold Voltage OFF mA 9.0 4.6 0.8 − 14 7.5 2.5 190 − 500 mA 0.07 1.0 mA 56 37 2.0 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mV mA mVrms mVrms 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 3.0 V) IOUTR 10 mA 6. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 7. TA must be greater than 0°C. http://onsemi.com 7 NCP3335A ELECTRICAL CHARACTERISTICS − 2.85 V (Vout = 2.85 V typical, Vin = 3.25 V, TA = −40°C to +85°C, unless otherwise noted, Note 8) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 3.25 V to 6.85 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.9% 2.824 2.85 +0.9% 2.876 V Output Voltage (Accuracy) Vin = 3.25 V to 6.85 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.4% 2.810 2.85 +1.4% 2.890 V Output Voltage (Accuracy) (Note 9) Vin = 3.25 V to 6.85 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.5% 2.807 2.85 +1.5% 2.893 V Line Regulation Vin = 3.25 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 3.25 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1mA VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown TJ Ground Current In Regulation Iload = 500 mA (Note 10) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA 340 230 110 10 500 700 mV 800 mA 900 mA 160 °C IGND In Dropout Vin = 2.75 V, Iload = 0.1 mA In Shutdown SD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Shutdown Threshold Voltage ON Threshold Voltage OFF 9.0 4.6 0.8 − 14 7.5 2.5 190 mA − 500 mA 0.07 1.0 mA 61 40 2.0 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mA mVrms mVrms 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 2.85 V) IOUTR 10 mA 8. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 9. For output current capability for TA < 0°C, please refer to Figure 18. 10. TA must be greater than 0°C. http://onsemi.com 8 NCP3335A ELECTRICAL CHARACTERISTICS − 2.8 V (Vout = 2.8 V typical, Vin = 3.2 V, TA = −40°C to +85°C, unless otherwise noted, Note 11.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 3.2 V to 6.8 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.9% 2.774 2.8 +0.9% 2.826 V Output Voltage (Accuracy) Vin = 3.2 V to 6.8 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.4% 2.760 2.8 +1.4% 2.840 V Output Voltage (Accuracy) (Note 12) Vin = 3.2 V to 6.8 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.5% 2.758 2.8 +1.5% 2.842 V Line Regulation Vin = 3.2 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 3.2 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1mA VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown TJ Ground Current In Regulation Iload = 500 mA (Note 13) Iload = 300 mA (Note 13) Iload = 50 mA Iload = 0.1 mA 340 230 110 10 500 700 mV 800 mA 900 mA 160 °C IGND In Dropout Vin = 2.7 V, Iload = 0.1 mA In Shutdown SD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Shutdown Threshold Voltage ON Threshold Voltage OFF 9.0 4.6 0.8 − 14 7.5 2.5 190 mA − 500 mA 0.07 1.0 mA 52 36 2.0 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mA mVrms mVrms 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 2.8 V) IOUTR 10 mA 11. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 12. For output current capability for TA < 0°C, please refer to Figure 19. 13. TA must be greater than 0°C. http://onsemi.com 9 NCP3335A ELECTRICAL CHARACTERISTICS − 2.5 V (Vout = 2.5 V typical, Vin = 2.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 14.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.9% 2.477 2.5 +0.9% 2.523 V Output Voltage (Accuracy) Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.4% 2.465 2.5 +1.4% 2.535 V Output Voltage (Accuracy), (Note 15) Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.5% 2.462 2.5 +1.5% 2.538 V Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA (Note 16) Iload = 300 mA (Note 16) Iload = 50 mA Iload = 0.1mA VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown TJ Ground Current In Regulation Iload = 500 mA (Note 16) Iload = 300 mA (Note 16) Iload = 50 mA Iload = 0.1 mA 340 230 110 10 500 700 mV 800 mA 900 mA 160 °C IGND 9.0 4.6 0.8 − In Dropout Vin = 2.4 V, Iload = 0.1 mA In Shutdown SD = 0 V 0.07 IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Shutdown Threshold Voltage ON Threshold Voltage OFF mA 500 mA 1.0 mA 56 35 2.0 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin 14 7.5 2.5 190 mA mVrms mVrms 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 2.5 V) IOUTR 10 mA 14. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 15. For output current capability for TA < 0°C, please refer to Figure 20. 16. TA must be greater than 0°C. http://onsemi.com 10 NCP3335A ELECTRICAL CHARACTERISTICS − 1.8 V (Vout = 1.8 V typical, Vin = 2.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 17.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 2.9 V to 5.8 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.9% 1.783 1.8 +0.9% 1.817 V Output Voltage (Accuracy) Vin = 2.9 V to 5.8 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.4% 1.774 1.8 +1.4% 1.826 V Output Voltage (Accuracy), (Note 18) Vin = 2.9 V to 5.8 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.5% 1.773 1.8 +1.5% 1.827 V Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA (Notes 19, 20) Iload = 300 mA (Notes 19, 20) Iload = 50 mA (Notes 19, 20) VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown TJ Ground Current In Regulation Iload = 500 mA (Note 19) Iload = 300 mA (Note 19) Iload = 50 mA Iload = 0.1 mA 500 mV 620 230 95 1130 1130 1130 700 830 mA 900 mA 160 °C IGND 9.0 4.6 0.8 − In Dropout Vin = 2.2 V, Iload = 0.1 mA In Shutdown SD = 0 V 0.07 IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Shutdown Threshold Voltage ON Threshold Voltage OFF mA 500 mA 1.0 mA 52 33 2.0 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin 14 7.5 2.5 190 mA mVrms mVrms 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 1.8 V) IOUTR 10 mA 17. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 18. For output current capability for TA < 0°C, please refer to Figure 21. 19. TA must be greater than 0°C. 20. Maximum dropout voltage is limited by minimum input voltage Vin = 2.9 V recommended for guaranteed operation. http://onsemi.com 11 NCP3335A ELECTRICAL CHARACTERISTICS − 1.5 V (Vout = 1.5 V typical, Vin = 2.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 21.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 2.9 V to 5.5 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.9% 1.486 1.5 +0.9% 1.514 V Output Voltage (Accuracy) Vin = 2.9 V to 5.5 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.4% 1.479 1.5 +1.4% 1.521 V Output Voltage (Accuracy), (Note 22) Vin = 2.9 V to 5.5 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.5% 1.477 1.5 +1.5% 1.523 V Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA (Notes 23, 24) Iload = 300 mA (Notes 23, 24) Iload = 50 mA (Notes 23, 24) VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown TJ Ground Current In Regulation Iload = 500 mA (Note 23) Iload = 300 mA (Note 23) Iload = 50 mA Iload = 0.1 mA 500 mV 940 500 350 1430 1430 1430 700 860 mA 900 mA 160 °C IGND 9.0 4.6 0.8 − In Dropout Vin = 2.2 V, Iload = 0.1 mA In Shutdown SD = 0 V 0.07 IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Shutdown Threshold Voltage ON Threshold Voltage OFF mA 500 mA 1.0 mA 51 31 2.0 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin 14 7.5 2.5 190 mA mVrms mVrms 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 1.5 V) IOUTR 10 mA 21. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 22. For output current capability for TA < 0°C, please refer to Figure 22. 23. TA must be greater than 0°C. 24. Maximum dropout voltage is limited by minimum input voltage Vin = 2.9 V recommended for guaranteed operation. http://onsemi.com 12 NCP3335A ELECTRICAL CHARACTERISTICS – Adjustable (Vout = 1.25 V typical, Vin = 2.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 25) Characteristic Symbol Min Typ Max Unit Reference Voltage (Accuracy) Vin = 2.9 V to Vout + 4.0 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vref −0.9% 1.239 1.25 +0.9% 1.261 V Reference Voltage (Accuracy) Vin = 2.9 V to Vout + 4.0 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vref −1.4% 1.233 1.25 +1.4% 1.268 V Reference Voltage (Accuracy) (Note 26) Vin = 2.9 V to Vout + 4.0 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vref −1.5% 1.231 1.25 +1.5% 1.269 V Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note), Vout = 2.5 V to 10 V Iload = 500 mA (Note 27) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA VDO Peak Output Current (Note 27) (See Figure 16) Ipk Short Output Current (See Figure 16) Vout ≤ 3.3 V Vout > 3.3 V Thermal Shutdown 340 230 110 10 500 Isc TJ Ground Current In Regulation Iload = 500 mA (Note 27) Iload = 300 mA (Note 27) Iload = 50 mA Iload = 0.1 mA 700 mV 860 mA 900 990 mA 160 °C IGND In Dropout Vin = Vout −0.1 V or 2.2 V (whichever is higher), Iload = 0.1 mA In Shutdown SD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Shutdown Threshold Voltage ON Threshold Voltage OFF 9.0 4.6 0.8 − 14 7.5 2.5 190 mA − 500 mA 0.07 1.0 mA 38 26 2.0 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin Vin ≤ 5.4 V Vin > 5.4 V mA mVrms mVrms 0.4 V V ISD 0.07 1.0 5.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = Vout (nom) ≤ 7 V) (Note 28) IOUTR 1.0 mA 25. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 26. For output current capability for TA < 0°C, please refer to Figures 18 to 22. 27. TA must be greater than 0°C. 28. Reverse bias protection feature valid only if Vout − Vin ≤ 7 V. http://onsemi.com 13 NCP3335A 3.04 5.05 VOUT (V) 5.00 VOUT = 5.0 V 4.95 3.01 3.00 VOUT = 3.0 V 2.99 2.98 2.97 4.90 2.96 −15 10 35 60 85 110 2.95 −40 135 150 20 40 60 80 100 120 140 Figure 5. Output Voltage vs. Temperature 5.0 V Version Figure 6. Output Voltage vs. Temperature 3.0 V Version 2.550 2.84 2.540 2.83 2.530 2.82 2.520 2.81 2.510 2.80 VOUT = 2.8 V 2.79 2.500 2.480 2.77 2.470 2.76 2.460 −20 0 20 40 60 80 100 120 2.450 −40 140 VOUT = 2.5 V 2.490 2.78 −20 0 20 40 60 80 100 120 140 TA, TEMPERATURE (°C) TA, TEMPERATURE (°C) Figure 7. Output Voltage vs. Temperature 2.8 V Version Figure 8. Output Voltage vs. Temperature 2.5 V Version 1.85 1.55 1.84 1.54 1.83 1.53 1.82 1.52 1.81 1.51 1.80 VOUT = 1.8 V 1.79 1.50 1.48 1.77 1.47 1.76 1.46 −20 0 20 40 60 80 100 120 1.45 −40 140 VOUT = 1.5 V 1.49 1.78 1.75 −40 0 TA, TEMPERATURE (°C) 2.85 2.75 −40 −20 TA, TEMPERATURE (°C) VOUT (V) VOUT (V) 3.03 3.02 4.85 −40 VOUT (V) 3.05 VOUT (V) OUTPUT VOLTAGE, VOUT (V) 5.10 −20 0 20 40 60 80 100 120 140 TA, TEMPERATURE (°C) TA, TEMPERATURE (°C) Figure 9. Output Voltage vs. Temperature 1.8 V Version Figure 10. Output Voltage vs. Temperature 1.5 V Version http://onsemi.com 14 NCP3335A 400 400 350 350 500 mA 250 300 mA 200 150 50 mA 100 250 200 150 0 20 40 60 80 100 120 0 140 60 80 100 120 140 TA, TEMPERATURE (°C) 500 mA 900 800 500 mA VDO (mV) 700 600 300 mA 300 200 700 300 mA 600 500 400 50 mA 300 200 100 0 50 mA 0 40 Figure 12. Dropout Voltage vs. Temperature 2.5 V Version 1100 1000 500 400 20 TA, TEMPERATURE (°C) 1200 900 800 0 Figure 11. Dropout Voltage vs. Temperature 2.8 V Version 1100 1000 VDO (mV) 50 mA 50 1200 100 0 300 mA 100 50 0 500 mA 300 VDO (mV) VDO (mV) 300 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 TA, TEMPERATURE (°C) TA, TEMPERATURE (°C) Figure 13. Dropout Voltage vs. Temperature 1.8 V Version Figure 14. Dropout Voltage vs. Temperature 1.5 V Version 1000 900 700 Ipk 600 Vout (V) Ipk (mA), Isc (mA) 0.97 Vout Isc 800 500 400 300 200 100 0 0 20 40 60 80 100 120 Ipk Isc Iout (mA) (For specific values of Ipk and Isc, please refer to Figure 15) 140 TA, TEMPERATURE (°C) Figure 15. Peak and Short Current vs. Temperature Figure 16. Output Voltage vs. Output Current http://onsemi.com 15 NCP3335A 0.8 12 0.7 10 500 mA −20°C 0.5 IOUT (A) 8 IGND (mA) 0°C 0.6 6 300 mA 4 0.4 0.3 0.2 2 0.1 50 mA 0 3.85 3.75 3.65 3.55 3.45 3.35 3.25 3.15 3.05 2.95 2.85 0 0 20 40 60 80 100 TA, TEMPERATURE (°C) 120 140 VIN (V) Figure 18. Output Current Capability for the 2.85 V Version Figure 17. Ground Current vs. Temperature 800 0.8 700 0°C 0.7 −40°C 500 −20°C 400 IOUT (A) −30°C −10°C 300 0.5 100 0.1 3.6 3.5 3.4 3.3 3.2 3.1 3.0 2.9 0 2.8 3.5 3.4 3.3 3.2 −20°C 3.1 3.0 2.9 2.8 2.7 2.6 2.5 VIN (V) VIN (V) Figure 19. Output Current Capability for the 2.8 V Version Figure 20. Output Current Capability for the 2.5 V Version 800 800 125°C 700 85°C 600 500 −40°C 500 −30°C −20°C 400 300 −10°C 200 0°C 125°C 700 600 400 85°C −40°C −30°C −20°C 300 −10°C 200 25°C 100 0 −30°C 0.3 0.2 3.7 −40°C 0.4 200 0 3.8 −10°C 0°C 0.6 IOUT (mA) IOUT (mA) 600 IOUT (mA) −40°C 0°C 100 3.2 3.0 2.8 2.6 2.4 2.2 2.0 1.8 0 3.2 3.0 2.8 2.6 25°C 2.4 2.2 2.0 VIN (V) VIN (V) Figure 21. Output Current Capability for the 1.8 V Version Figure 22. Output Current Capability for the 1.5 V Version http://onsemi.com 16 1.8 NCP3335A 450 80 400 70 50 mA 250 mA 60 NOISE DENSITY (nV/ǠHz) 500 90 RR, RIPPLE REJECTION (dB) 100 50 500 mA 40 30 Vout = 2.5 V Cout = 10 mF TJ = 25°C 20 10 0 0.01 250 200 10 Cout = 1.0 mF Cnr = 10 nF 150 Vout = 2.5 V Iout = 500 mA TJ = 25°C 100 0 1.0 100 0.01 Cout = 10 mF Cnr = 10 nF 0.1 1.0 F, FREQUENCY (kHz) Figure 23. Ripple Rejection vs. Frequency Figure 24. Output Noise Density 300 300 250 qJA (°C/W) 1 oz CF 200 2 oz CF 150 100 100 200 150 1 oz CF 100 2 oz CF 50 50 0 100 200 300 400 500 COPPER HEAT SPREADING AREA 600 0 700 0 (mm2) 100 200 300 400 500 COPPER HEAT SPREADING AREA 600 700 (mm2) Figure 26. DFN 10 Self Heating Thermal Characteristic as a Function of Copper Area on the PCB Figure 25. Micro 8 Self Heating Thermal Characteristic as a Function of Copper Area on the PCB 15 15 5 V, 0.1 mF Vin at Data Sheet Test Conditions, 25°C, 1 mF Capacitance 5 V, 10 mF 5 V, 1.0 mF 10 10 ESR (W) MAXIMUM ESR (W) 10 F, FREQUENCY (kHz) 250 qJA (°C/W) 300 50 0.1 Cout = 10 mF Cnr = 0 nF 350 350 0 Cout = 1.0 mF Cnr = 0 nF Unstable Area 5.0 1.25 V, M8 5.0 Min ESR Stable Area 0 0 100 200 300 400 500 0 0 100 200 300 400 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 27. Stability with ESR vs. Iout Figure 28. Output Current vs. ESR NOTE: Typical characteristics were measured with the same conditions as electrical characteristics. http://onsemi.com 17 500 NCP3335A APPLICATIONS INFORMATION Reverse Bias Protection is recommended to further reduce output noise and improve stability. Reverse bias is a condition caused when the input voltage goes to zero, but the output voltage is kept high either by a large output capacitor or another source in the application which feeds the output pin. Normally in a bipolar LDO all the current will flow from the output pin to input pin through the PN junction with limited current capability and with the potential to destroy the IC. Due to an improved architecture, the NCP3335A can withstand up to 7.0 V on the output pin with virtually no current flowing from output pin to input pin, and only negligible amount of current (tens of mA) flowing from the output pin to ground for infinite duration. The output voltage can be set by using a resistor divider as shown in Figure 2 with a range of 1.25 to 10 V. The appropriate resistor divider can be found by solving the equation below. The recommended current through the resistor divider is from 10 mA to 100 mA. This can be accomplished by selecting resistors in the kW range. As result, the Iadj*R2 becomes negligible in the equation and can be ignored. Input Capacitor Example: For Vout = 2.9 V, can use R1 = 36 kW and R2 = 27 kW. Adjustable Operation ǒ Ǔ Vout + 1.25 * 1 ) R1 ) Iadj * R2 R2 An input capacitor of at least 1.0 mF, any type, is recommended to improve the transient response of the regulator and/or if the regulator is located more than a few inches from the power source. It will also reduce the circuit’s sensitivity to the input line impedance at high frequencies. The capacitor should be mounted with the shortest possible track length directly across the regular’s input terminals. ǒ 1.25 * 1 ) Ǔ 36 kW + 2.91 V 27 kW (eq. 1) (eq. 2) Dropout Voltage The voltage dropout is measured at 97% of the nominal output voltage. Thermal Considerations Output Capacitor Internal thermal limiting circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. This feature provides protection from a catastrophic device failure due to accidental overheating. This protection feature is not intended to be used as a substitute to heat sinking. The maximum power that can be dissipated, can be calculated with the equation below: The NCP3335A remains stable with any type of capacitor as long as it fulfills its 1.0 mF requirement. There are no constraints on the minimum ESR and it will remain stable up to an ESR of 5.0 W. Larger capacitor values will improve the noise rejection and load transient response. Noise Reduction Pin Output noise can be greatly reduced by connecting a 10 nF capacitor (Cnr) between the noise reduction pin and ground (see Figure 1). In applications where very low noise is not required, the noise reduction pin can be left unconnected. For the adjustable version, in addition to the 10 nF Cnr, a 68 pF capacitor connected in parallel with R1 (see Figure 2) PD + TJ(max) * TA RqJA (eq. 3) For improved thermal performance, contact the factory for the DFN package option. The DFN package includes an exposed metal pad that is specifically designed to reduce the junction to air thermal resistance, RqJA. http://onsemi.com 18 NCP3335A ORDERING INFORMATION Nominal Output Voltage Marking Package Shipping† NCP3335ADM150R2G 1.5 V LKI Micro8 (Pb−Free) 4000 / Tape & Reel NCP3335ADM180R2G 1.8 V LKJ Micro8 (Pb−Free) 4000 / Tape & Reel NCP3335ADM250R2G 2.5 V LIQ Micro8 (Pb−Free) 4000 / Tape & Reel NCP3335ADM280R2G 2.8 V LKK Micro8 (Pb−Free) 4000 / Tape & Reel NCP3335ADM285R2G 2.85 V LIR Micro8 (Pb−Free) 4000 / Tape & Reel NCP3335ADM300R2G 3.0 V LKL Micro8 (Pb−Free) 4000 / Tape & Reel NCP3335ADM330R2G 3.3 V LIS Micro8 (Pb−Free) 4000 / Tape & Reel NCP3335ADM500R2G 5.0 V LIT Micro8 (Pb−Free) 4000 / Tape & Reel NCP3335ADMADJR2G Adj. LIO Micro8 (Pb−Free) 4000 / Tape & Reel NCP3335AMN150R2G 1.5 V 15 DFN10 (Pb−Free) 3000 / Tape & Reel NCP3335AMN180R2G 1.8 V 18 DFN10 (Pb−Free) 3000 / Tape & Reel NCP3335AMN250R2G 2.5 V 25 DFN10 (Pb−Free) 3000 / Tape & Reel NCP3335AMN280R2G 2.8 V 28 DFN10 (Pb−Free) 3000 / Tape & Reel NCP3335AMN285R2G 2.85 V 285 DFN10 (Pb−Free) 3000 / Tape & Reel NCP3335AMN300R2G 3.0 V 30 DFN10 (Pb−Free) 3000 / Tape & Reel NCP3335AMN330R2G 3.3 V 33 DFN10 (Pb−Free) 3000 / Tape & Reel NCP3335AMN500R2G 5.0 V 50 DFN10 (Pb−Free) 3000 / Tape & Reel NCP3335AMNADJR2G Adj. ADJ DFN10 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Please contact factory for other voltage options. Micro8 is a trademark of International Rectifier. http://onsemi.com 19 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN10, 3x3, 0.5P CASE 485C ISSUE F SCALE 2:1 DATE 16 DEC 2021 GENERIC MARKING DIAGRAM* XXXXX XXXXX ALYWG G XXXXX = Specific Device Code A = Assembly Location L = Wafer Lot *This information is generic. Please refer to Y = Year device data sheet for actual part marking. W = Work Week Pb−Free indicator, “G” or microdot “G”, may G = Pb−Free Package or may not be present. Some products may (Note: Microdot may be in either location) not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON03161D Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFN10, 3X3 MM, 0.5 MM PITCH PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS Micro8 CASE 846A−02 ISSUE K DATE 16 JUL 2020 SCALE 2:1 GENERIC MARKING DIAGRAM* 8 XXXX AYWG G 1 XXXX A Y W G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB14087C MICRO8 STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1 STYLE 3: PIN 1. 2. 3. 4. 5. 6. 7. 8. N-SOURCE N-GATE P-SOURCE P-GATE P-DRAIN P-DRAIN N-DRAIN N-DRAIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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