NCP361SNT1G

NCP361, NCV361 USB Positive Overvoltage Protection Controller with Internal PMOS FET and Overcurrent Protection The NCP361 disconnects systems at its output when wrong VBUS operating conditions are detected at its input. The system is positive over−voltage protected up to +20 V. Thanks to an integrated PMOS FET, no external device is necessary, reducing the system cost and the PCB area of the application board. The NCP361 is able to instantaneously disconnect the output from the input if the input voltage exceeds the overvoltage threshold (5.675 V). Thanks to an overcurrent protection, the integrated PMOS is turning off when the charge current exceeds current limit (see options in ordering information). The NCP361 provides a negative going flag (FLAG) output, which alerts the system that voltage, current or overtemperature faults have occurred. In addition, the device has ESD−protected input (15 kV Air) when bypassed with a 1 mF or larger capacitor. Features • • • • • • • • • • • • • Overvoltage Protection up to 20 V On−chip PMOS Transistor Overvoltage Lockout (OVLO) Undervoltage Lockout (UVLO) Overcurrent Protection Alert FLAG Output EN Enable Pin Thermal Shutdown Compliance to IEC61000−4−2 (Level 4) 8 kV (Contact) 15 kV (Air) ESD Ratings: Machine Model = B ESD Ratings: Human Body Model = 2 UDFN6 2x2 mm and TSOP−5 3x3 mm Packages NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable This is a Pb−Free Device February, 2019 − Rev. 5 6 PIN UDFN CASE 517AB 1 xx M G 5 1 xxx AYWG G TSOP−5 CASE 483 1 xxx = Specific Device Code M = Date Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS EN 1 6 FLAG GND 2 5 OUT IN 3 4 OUT UDFN IN 1 GND 2 EN 3 5 OUT 4 FLAG (Top View) USB Devices Mobile Phones Peripheral Personal Digital Applications MP3 Players Set Top Boxes © Semiconductor Components Industries, LLC, 2012 MARKING DIAGRAMS TSOP−5 Applications • • • • • • www.onsemi.com ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. 1 Publication Order Number: NCP361/D NCP361, NCV361 INPUT OUTPUT 3 1 mF 25 V X5R 0603 C1 4 OUT 5 OUT IN EN FLAG GND 1 mF 25 V X5R 0603 C2 NCP361 1 FLAG Power 6 FLAG 2 R1 1M J2 2 1 FLAG_State Figure 1. Typical Application Circuit (UDFN Pinout) OUTPUT INPUT (2 out pins in UDFN package) Thermal Shutdown Soft Start FLAGV EN LDO UVLO OVLO VREF Figure 2. Functional Block Diagram PIN FUNCTION DESCRIPTION (UDFN Package) Pin No. Name Type Description 1 EN INPUT 2 GND POWER Ground 3 IN POWER Input Voltage Pin. This pin is connected to the VBUS. A 1 mF low ESR ceramic capacitor, or larger, must be connected between this pin and GND. 4, 5 OUT OUTPUT Output Voltage Pin. The output is disconnected from the VBUS power supply when the input voltage is above OVLO threshold or below UVLO threshold. A 1 mF capacitor must be connected to these pins. The two OUT pins must be hardwired to common supply. 6 FLAG OUTPUT Fault Indication Pin. This pin allows an external system to detect a fault on VBUS pin. The FLAG pin goes low when input voltage exceeds OVLO threshold. Since the FLAG pin is open drain functionality, an external pull up resistor to VCC must be added. Enable Pin. The device enters in shutdown mode when this pin is tied to a high level. In this case the output is disconnected from the input. To allow normal functionality, the EN pin shall be connected to GND or to a I/O pin. This pin does not have an impact on the fault detection. PIN FUNCTION DESCRIPTION (TSOP−5 Package) Pin No. Name Type 1 IN POWER Input Voltage Pin. This pin is connected to the VBUS. A 1 mF low ESR ceramic capacitor, or larger, must be connected between this pin and GND. 2 GND POWER Ground 3 EN INPUT 4 FLAG OUTPUT Fault Indication Pin. This pin allows an external system to detect a fault on VBUS pin. The FLAG pin goes low when input voltage exceeds OVLO threshold. Since the FLAG pin is open drain functionality, an external pull up resistor to VCC must be added. 5 OUT OUTPUT Output Voltage Pin. The output is disconnected from the VBUS power supply when the input voltage is above OVLO threshold or below UVLO threshold. A 1 mF capacitor must be connected to this pin. NOTE: Description Enable Pin. The device enters in shutdown mode when this pin is tied to a high level. In this case the output is disconnected from the input. To allow normal functionality, the EN pin shall be connected to GND or to a I/O pin. This pin does not have an impact on the fault detection. Pin out provided for concept purpose only and might change in the final product www.onsemi.com 2 NCP361, NCV361 MAXIMUM RATINGS Rating Symbol Value Unit Vminin −0.3 V Vmin −0.3 V Vmaxin 21 V Maximum Voltage (All others to GND) Vmax 7.0 V Maximum DC Current from Vin to Vout (PMOS) (Note 1) Imax 600 mA RqJA 305 240 °C/W Operating Ambient Temperature Range TA −40 to +85 °C Storage Temperature Range Tstg −65 to +150 °C Junction Operating Temperature TJ 150 °C ESD Withstand Voltage (IEC 61000−4−2) Human Body Model (HBM), Model = 2 (Note 2) Machine Model (MM) Model = B (Note 3) Vesd 15 Air, 8.0 Contact 2000 200 kV V V Moisture Sensitivity MSL Level 1 − Minimum Voltage (IN to GND) Minimum Voltage (All others to GND) Maximum Voltage (IN to GND) Thermal Resistance, Junction−to−Air TSOP−5 UDFN Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. With minimum PCB area. By decreasing RqJA, the current capability increases. See PCB recommendation page 9. 2. Human Body Model, 100 pF discharged through a 1.5 kW resistor following specification JESD22/A114. 3. Machine Model, 200 pF discharged through all pins following specification JESD22/A115. www.onsemi.com 3 NCP361, NCV361 ELECTRICAL CHARACTERISTICS (Min/Max limits values (−40°C < TA < +85°C) and Vin = +5.0 V. Typical values are TA = +25°C, unless otherwise noted.) Characteristic Input Voltage Range Symbol Vin Undervoltage Lockout Threshold UVLO Uvervoltage Lockout Hysteresis UVLOhyst Overvoltage Lockout Threshold OVLO Overvoltage Lockout Hysteresis OVLOhyst Vin versus Vout Dopout Conditions Min Typ 1.2 Vin falls down UVLO threshold Vin rises up OVLO threshold Max Unit 20 V 2.85 3.0 3.15 V 50 70 90 mV 5.43 5.675 5.9 V 50 100 125 mV 150 200 mV 750 950 mA Vdrop Vin = 5 V, I charge = 500 mA Overcurrent Limit Ilim Vin = 5 V Supply Quiescent Current Idd No Load, Vin = 5.25 V 20 35 mA Standby Current Istd Vin = 5 V, EN = 1.2 V 26 37 mA IDSS VDS = 20 V, VGS = 0 V 0.08 Volflag Vin > OVLO Sink 1 mA on FLAG pin Zero Gate Voltage Drain Current FLAG Output Low Voltage FLAG Leakage Current 550 mA 400 5.0 mV FLAGleak FLAG level = 5 V EN Voltage High Vih Vin from 3.3 V to 5.5 V nA EN Voltage Low Vil Vin from 3.3 V to 5.5 V EN Leakage Current ENleak EN = 5.5 V or GND 170 ton From Vin > UVLO to Vout = 0.8xVin, See Fig 3 & 9 4.0 tstart From Vin > UVLO to FLAG = 1.2 V, See Fig 3 & 10 3.0 toff From Vin > OVLO to Vout ≤ 0.3 V, See Fig 4 & 11 Vin increasing from 5 V to 8 V at 3 V/ms. No output capacitor. 0.7 Alert Delay tstop From Vin > OVLO to FLAG ≤ 0.4 V, See Fig 4 & 12 Vin increasing from 5 V to 8 V at 3 V/ms 1.0 ms Disable Time tdis From EN 0.4 to 1.2V to Vout ≤ 0.3 V, See Fig 5 & 13 Vin = 4.75 V. No output capacitor. 3.0 ms Thermal Shutdown Temperature Tsd 150 °C Tsdhyst 30 °C 1.2 V 0.55 V nA TIMINGS Start Up Delay FLAG going up Delay Output Turn Off Time Thermal Shutdown Hysteresis www.onsemi.com 4 15 ms ms 1.5 ms NCP361, NCV361 OVLO or VIN < UVLO Voltage, Current and Thermal Detection Figure 7. CONDITIONS IN OUT Voltage, Current and Thermal Detection Figure 8. TYPICAL OPERATING CHARACTERISTICS www.onsemi.com 5 UVLO < VIN < OVLO NCP361, NCV361 Figure 9. Start Up. Vin=Ch1, Vout=Ch2 Figure 10. FLAG Going Up Delay. Vin=Ch1, FL:AG=Ch3 Figure 12. Alert Delay. Vout=Ch1, FLAG=Ch3 Figure 11. Output Turn Off time. Vin=Ch1, Vout=Ch2 Figure 13. Disable Time. EN=Ch4, Vin=Ch1, Vout=Ch2 Figure 14. Thermal Shutdown. Vin=Ch1, Vout=Ch2, FLAG=Ch3 www.onsemi.com 6 NCP361, NCV361 TYPICAL OPERATING CHARACTERISTICS 450 400 RDS(on) (mW) 350 300 Vin = 3.6 V 250 200 150 Vin = 5 V 100 50 0 −50 0 50 100 150 TEMPERATURE (°C) Figure 16. Output Short Circuit 900 OVERCURRENT THRESHOLD (mA) 180 160 140 120 100 80 25°C 125°C 60 40 −40°C 20 0 1 3 5 7 9 11 13 15 17 19 880 Vin = 3.25 V 860 Vin = 3.6 V 840 820 Vin = 4.2 V 800 Vin = 5 V 780 760 Vin = 5.25 V 740 720 −50 21 0 Vin, INPUT VOLTAGE (V) 50 Figure 18. Overcurrent Protection Threshold vs. Temperature 900 25°C 880 860 840 85°C 820 125°C 800 780 760 0°C −25°C 740 720 −40°C 3 100 TEMPERATURE (°C) Figure 17. Quiescent Current vs. Input Voltage OVERCURRENT THRESHOLD (mA) SUPPLY QUIESCENT CURRENT (mA) Figure 15. RDS(on) vs. Temperature (Load = 500 mA) 3.5 4 4.5 5 5.5 INPUT VOLTAGE (V) Figure 19. Overcurrent Protection Threshold vs. Input Voltage www.onsemi.com 7 150 NCP361, NCV361 Operation Vout NCP361 provides overvoltage protection for positive voltage, up to 20 V. A PMOS FET protects the systems (i.e.: VBUS) connected on the Vout pin, against positive overvoltage. The Output follows the VBUS level until OVLO threshold is overtaken. Undervoltage Lockout (UVLO) Overload Iload To ensure proper operation under any conditions, the device has a built−in undervoltage lock out (UVLO) circuit. During Vin positive going slope, the output remains disconnected from input until Vin voltage is above 3.0 V nominal. The FLAGV output is pulled to low as long as Vin does not reach UVLO threshold. This circuit has a 70 mV hysteresis to provide noise immunity to transient condition. Retrieve normal operation Ilim ton Vin (V) Figure 21. Overcurrent Event Example 20 V FLAG Output OVLO NCP361 provides a FLAG output, which alerts external systems that a fault has occurred. This pin is tied to low as soon as: 1.2 V < Vin < UVLO, Vin > OVLO, Icharge > Ilimit, TJ > 150°C. When NCP361 recovers normal condition, FLAG is held high. The pin is an open drain output, thus a pull up resistor (typically 1 MW − Minimum 10 kW) must be provided to VCC. FLAG pin is an open drain output. UVLO 0 Vout OVLO UVLO EN Input 0 To enable normal operation, the EN pin shall be forced to low or connected to ground. A high level on the pin disconnects OUT pin from IN pin. EN does not overdrive an OVLO or UVLO fault. Figure 20. Output Characteristic vs. Vin Overvoltage Lockout (OVLO) To protect connected systems on Vout pin from overvoltage, the device has a built−in overvoltage lock out (OVLO) circuit. During overvoltage condition (OVLO exceeds), the output remains disabled and FLAG is tied low, as long as the input voltage is higher than OVLO − hysteresis. This circuit has a 100 mV hysteresis to provide noise immunity to transient conditions. Internal PMOS FET The NCP361 includes an internal PMOS FET to protect the systems, connected on OUT pin, from positive overvoltage. Regarding electrical characteristics, the RDS(on), during normal operation, will create low losses on Vout pin, characterized by Vin versus Vout dropout. Overcurrent Protection (OCP) ESD Tests The NCP361 integrates overcurrent protection to prevent system/battery overload or defect. The current limit threshold is internally set at 750 mA. This value can be changed from 150 mA to 750 mA by a metal tweak, please contact your ON Semiconductor representative for availability. During current fault, the internal PMOS FET is automatically turned off (5 ms) if the charge current exceeds Ilim. NCP361 goes into turn on and turn off mode as long as defect is present. The internal ton delay (4 ms typical) allows limiting thermal dissipation. The Flag pin goes to low level when an overcurrent fault appears. That allows the microcontroller to count defect events and turns off the PMOS with EN pin. The NCP361 fully supports the IEC61000−4−2, level 4 (Input pin, 1 mF mounted on board). That means, in Air condition, Vin has a ±15 kV ESD protected input. In Contact condition, Vin has ±8 kV ESD protected input. Please refer to Figure 22 to see the IEC61000−4−2 electrostatic discharge waveform. www.onsemi.com 8 NCP361, NCV361 from an application standpoint. Of course, in any case, this pad shall be not connected to any other potential. By increasing PCB area, the RqJA of the package can be decreased, allowing higher charge current to fill the battery. Taking into account that internal bondings (wires between package and silicon) can handle up to 1 A (higher than thermal capability), the following calculation shows two different example of current capability, depending on PCB area: • With 305°C/W (without PCB area), allowing DC current is 500 mA • With 260°C/W (200 mm2), the charge DC current allows with a 85°C ambient temperature is: I = √(TJ-TA)/(RqJA x RDSON) I = 625 mA In every case, we recommend to make thermal measurement on final application board to make sure of the final Thermal Resistance. Figure 22. PCB Recommendations The NCP361 integrates a 500 mA rated PMOS FET, and the PCB rules must be respected to properly evacuate the heat out of the silicon. The UDFN PAD1 must be connected to ground plane to increase the heat transfer if necessary 380 50% 45% TSOP−5 1.0 oz TSOP−5 2.0 oz DFN 2x2.2 1.0 oz DFN 2x2.2 2.0 oz % Delta DFN vs TSOP−5 Theta JA (C/W) 280 230 40% 35% 30% 25% 20% 180 15% % Delta DFN vs TSOP−5 330 10% 130 5% 80 0 100 200 300 400 500 600 0% 700 Copper heat spreader area (mm^2) Figure 23. Thermal Resistance of UDFN 2x2 and TSOP Packages as a Function of PCB Area and Thickness www.onsemi.com 9 NCP361, NCV361 ORDERING INFORMATION Marking Package Shipping† NCP361MUTBG AD UDFN6 (Pb−Free) 3000 / Tape & Reel NCP361SNT1G ACD TSOP−5 (Pb−Free) 3000 / Tape & Reel NCV361SNT1G* VET TSOP−5 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SELECTION GUIDE Part number is designated as follows: NCP361xxxxxTxG a b cd e Code Contents a Overcurrent Threshold −: 750 mA b Package MU: UDFN SN: TSOP−5 c UVLO Typical Threshold −: 3.00 V d OVLO Typical Threshold −: 5.675 V e Tape & Reel Type B: = 3000 1: = 3000 www.onsemi.com 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOP−5 CASE 483 ISSUE N 5 1 SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. D 5X NOTE 5 2X DATE 12 AUG 2020 0.20 C A B 0.10 T M 2X 0.20 T 5 B 1 4 2 B S 3 K DETAIL Z G A A TOP VIEW DIM A B C D G H J K M S DETAIL Z J C 0.05 H C SIDE VIEW SEATING PLANE END VIEW GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 0.95 0.037 MILLIMETERS MIN MAX 2.85 3.15 1.35 1.65 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 1.9 0.074 5 5 XXXAYWG G 1 1 Analog 2.4 0.094 XXX = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package 1.0 0.039 XXX MG G Discrete/Logic XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ARB18753C TSOP−5 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN6 2x2, 0.65P CASE 517AB ISSUE C DATE 10 APR 2013 SCALE 4:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25MM FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. TIE BARS MAY BE VISIBLE IN THIS VIEW AND ARE CONNECTED TO THE THERMAL PAD. A B D NOTE 5 PIN ONE REFERENCE 0.10 C 0.10 C ÍÍ ÍÍ ÍÍ E END VIEW TOP VIEW ÉÉÉ ÉÉÉ ÇÇÇ A3 DETAIL B 0.10 C EXPOSED Cu A 6X 0.08 C A1 NOTE 4 C SIDE VIEW DETAIL A D2 1 SEATING PLANE L 3 4 6X L DETAIL A ALTERNATE TERMINAL CONSTRUCTIONS b e BOTTOM VIEW 0.10 M C A B 0.05 M C A1 GENERIC MARKING DIAGRAM* ALTERNATE CONSTRUCTIONS L1 6 A3 DETAIL B L E2 ÉÉ ÉÉ ÇÇ MOLD CMPD MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.127 REF 0.25 0.35 2.00 BSC 1.50 1.70 2.00 BSC 0.80 1.00 0.65 BSC 0.25 0.35 --0.15 DIM A A1 A3 b D D2 E E2 e L L1 XXMG G XX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. RECOMMENDED SOLDERING FOOTPRINT* PACKAGE OUTLINE 1.70 6X 0.47 2.30 0.95 1 0.65 PITCH 6X 0.40 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON22162D UDFN6 2X2, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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