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NCP4300ADR2G

NCP4300ADR2G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOIC8_150MIL

  • 描述:

    IC OPAMP GP 700KHZ 8SOIC

  • 数据手册
  • 价格&库存
NCP4300ADR2G 数据手册
NCP4300A Dual Operational Amplifier and Voltage Reference The NCP4300A is a monolithic integrated circuit specifically designed to control the output current and voltage levels of switch mode battery chargers and power supplies. This device contains a precision 2.6 V shunt reference and two operational amplifiers. Op−Amp 1 is designed to perform voltage control and has its non−inverting input internally connected to the reference. Op−Amp 2 is designed for current control and has both inputs uncommitted. The NCP4300A offers the power converter designer a control solution that features increased precision with a corresponding reduction in system complexity and cost. This device is available in an 8−lead surface mount package. http://onsemi.com MARKING DIAGRAM 8 SOIC−8 D SUFFIX CASE 751 8 1 1 A L Y W A G Features • This is a Pb−Free Device Operational Amplifier • • • • • • Low Input Offset Voltage: 0.5 mV Input Common Mode Voltage Range Includes Ground Low Supply Current: 210 mA/Op−Amp (@VCC = 5.0 V) Medium Unity Gain Bandwidth: 0.7 MHz Large Output Voltage Swing: 0 V to VCC − 1.5 V Wide Power Supply Voltage Range: 3.0 V to 35 V • Fixed Output Voltage Reference: 2.60 V • High Precision Over Temperature: 1.0% • Wide Sink Current Range: 80 mA to 80 mA Out 1 1 8 VCC In 1− 2 7 Out 2 In 1+ 3 6 In 2− GND 4 5 In 2+ (Top View) ORDERING INFORMATION Typical Applications • Battery Charger • Switch Mode Power Supply 8 - 1 + 3 Device Package Shipping† NCP4300ADG SOIC−8 (Pb−Free) 98 Units / Rail NCP4300ADR2G SOIC−8 (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Output 2 - 7 Inputs 1 VCC + 2 6 2.6 V GND = Assembly Location = Wafer Lot = Year = Work Week = Option Code = Pb−Free Package PIN CONNECTIONS Voltage Reference Output 1 N4300 ALYWA G 4 Inputs 2 5 Figure 1. Functional Block Diagram © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 4 1 Publication Order Number: NCP4300A/D NCP4300A ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Supply Voltage (VCC to GND) Rating VCC 36 V ESD Protection Voltage at any Pin (Human Body Model) VESD 2.0 K (min) V Op−Amp 1 and 2 Input Voltage Range (Pins 2, 5, 6) VIR −0.6 to VCC +0.6 V Op−Amp 2 Input Differential Voltage Range (Pins 5, 6) VIDR VCC to GND V Voltage Reference Cathode Current (Pin 3) IK 100 mA Maximum Junction Temperature TJ 150 °C Operating Ambient Temperature Range TA 0 to 105 °C Storage Temperature Range Tstg −55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance, Junction−to−Ambient RqJA 155 °C/W Thermal Resistance, Junction−to−Case RqJC 45 °C/W TYPICAL ELECTRICAL CHARACTERISTICS Characteristic Total Supply Current, excluding Current in the Voltage Reference VCC = 5.0 V, no load; 0°C v TA v 105°C Symbol Min Typ Max Unit ICC − 0.42 0.8 mA − − 0.5 − 2.0 3.0 − 7.0 − − − −50 − −150 −150 50 25 100 − − − Op−Amp 1 (Op−amp with non−inverting input connected to the internal Vref) (VCC = 5.0 V, Vout = 1.4 V, TA = 25°C, unless otherwise noted) Input Offset Voltage TA = 25°C TA = 0°C to 105°C VIO Input Offset Voltage Temperature Coefficient TA = 0°C to 105°C DVIO/DT Input Bias Current (Inverting input only) TA = 25°C TA = 0°C to 105°C IIB mV mV/°C nA Large Signal Voltage Gain (VCC = 15 V, RL = 2.0 kW, Vout = 1.4 V to 11.4 V) TA = 25°C TA = 0°C to 105°C AVOL Power Supply Rejection (VCC = 5.0 V to 30 V) PSRR 40 90 − dB IO+ 10 16 − mA Output Sink Current (VCC = 15 V, Vout = 2.0 V, VID = −1.0 V) IO− 10 25 − mA Output Voltage Swing, High (VCC = 30 V, RL = 10 kW, VID = +1.0 V) TA = 25°C TA = 0°C to 105°C VOH 27 27 28 − − − Output Voltage Swing, Low (RL = 10 kW, VID = −1.0 V) TA = 25°C TA = 0°C to 105°C VOL − − 17 − 100 100 Slew Rate (Vin = 0.5 to 2.0 V, VCC = 15 V, RL = 2.0 kW, Av = 1.0, CL = 100 pF) SR 0.3 0.5 − V/ms Unity Gain Bandwidth (VCC = 30 V, RL = 2.0 kW, CL = 100 pF, Vin = 0.5 Vpp @ f = 70 kHz) BW 0.3 0.7 − MHz Total Harmonic Distortion (f = 1.0 kHz, AV = 10, RL = 2.0 kW, VCC = 30 V, Vout = 2.0 VPP) THD − 0.02 − % Output Source Current (VCC = 15 V, Vout = 2.0 V, VID = +1.0 V) http://onsemi.com 2 V/mV V mV NCP4300A TYPICAL ELECTRICAL CHARACTERISTICS (continued) Characteristic Symbol Min Typ Max − − 0.5 − 2.0 3.0 − 7.0 − − − 2.0 − 30 30 − − −50 − −150 −150 − 0 to VCC −1.5 − 50 25 100 − − − 40 90 − 40 30 60 − − − Unit Op−Amp 2 (Independent op−amp) (VCC = 5.0 V, Vout = 1.4 V, TA = 25°C, unless otherwise noted) VIO Input Offset Voltage TA = 25°C TA = 0°C to 105°C Input Offset Voltage Temperature Coefficient TA = 0°C to 105°C DVIO/DT Input Offset Current TA = 25°C TA = 0°C to 105°C IIO Input Bias Current TA = 25°C TA = 0°C to 105°C IIB Input Common Mode Voltage Range (VCC = 0 V to 35 V) VICR Large Signal Voltage Gain (VCC = 15 V, RL = 2.0 kW, Vout = 1.4 V to 11.4 V) TA = 25°C TA = 0°C to 105°C AVOL Power Supply Rejection (VCC = 5.0 V to 30 V) PSRR Common Mode Rejection (VCM = 0 V to 3.5 V) TA = 25°C TA = 0°C to 105°C CMRR mV mV/°C nA nA V V/mV dB dB Output Source Current (VCC = 15 V, Vout = 2.0 V, VID = +1.0 V) IO+ 10 16 − mA Output Sink Current (VCC = 15 V, Vout = 2.0 V, VID = −1.0 V) IO− 10 25 − mA Output Voltage Swing, High (VCC = 30 V, RL = 10 kW, VID = +1.0 V) TA = 25°C TA = 0°C to 105°C VOH 27 27 28 − − − Output Voltage Swing, Low (RL = 10 kW, VID = −1.0 V) TA = 25°C TA = 0°C to 105°C VOL − − 17 − 100 100 V mV Slew Rate (Vin = 0.5 to 3.0 V, VCC = 15 V, RL = 2.0 kW, Av = 1.0, CL = 100 pF) SR 0.3 0.5 − V/ms Unity Gain Bandwidth (VCC = 30 V, RL = 2.0 kW, CL = 100 pF, Vin = 0.5 Vpp @ f = 70 kHz) BW 0.3 0.7 − MHz Total Harmonic Distortion (f = 1.0 KHz, AV = 10, RL = 2.0 kW, VCC = 30 V, Vout = 2.0 VPP) THD − 0.02 − % − 2.574 2.60 2.60 − 2.626 Voltage Reference Reference Voltage (IK = 10 mA) TA = 25°C TA = 0°C to 105°C Vref V Reference Input Voltage Deviation Over Full Temperature Range (IK = 10 mA, TA = 0°C to 105°C) DVref − 5.0 22 mV Minimum Cathode Current for Regulation IK(min) − 55 80 mA Dynamic Impedance TA = 25°C, IK = 1.0 to 80 mA, f t 1.0 KHz TA = 0°C to 125°C, IK = 1.0 mA to 60 mA, f t 1.0 KHz |ZKA| − − 0.3 − 0.5 0.6 http://onsemi.com 3 W TA = 25°C 60 Vref, REFERENCE VOLTAGE (V) IK, CATHODE CURRENT (mA) NCP4300A 40 20 0 −20 −1.0 0 1.0 2.0 2.620 2.610 2.600 2.590 2.580 3.0 100 Figure 3. Reference Voltage vs. Ambient Temperature 10 0.35 0.3 0.25 0 50 TA = 25°C 8.0 Stable 6.0 Unstable 4.0 2.0 Stable 0 100 pF 100 1000 pF 1.0 mF 10 mF 100 mF CL, LOAD CAPACITANCE TA, AMBIENT TEMPERATURE (°C) Figure 5. Reference Stability vs. Load Capacitance Figure 4. Reference Dynamic Impedance vs. Ambient Temperature 0 1.0 VCC = 5.0 V IIB, INPUT BIAS CURRENT (nA) VO, INPUT OFFSET VOLTAGE (mV) 80 Figure 2. Reference Cathode Current vs. Cathode Voltage IK = 1.0 mA to 60 mA Op−Amp 2 0.5 0 Op−Amp 1 −0.5 −1.0 60 40 TA, AMBIENT TEMPERATURE (°C) IK, CATHODE CURRENT (mA) |ZKA|, DYNAMIC IMPEDANCE (W) 20 0 VKA, CATHODE VOLTAGE (V) 0.4 0.2 IK = 10 mA 0 20 40 60 80 VCC = 5.0 V −5.0 −10 −15 Op−Amp 1 −20 −25 100 Op−Amp 2 0 20 40 60 80 TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 6. Input Offset Voltage vs. Ambient Temperature Figure 7. Input Bias Current vs. Ambient Temperature http://onsemi.com 4 100 CMRR, COMMON MODE REJECTION RATIO (dB) NCP4300A 65 VCC = 3.0 V to 35 V 60 105°C 55 25°C 50 0 0°C 10 20 30 40 VCC, SUPPLY VOLTAGE (V) Figure 8. Common Mode Rejection Ratio vs. Supply Voltage DETAILED OPERATING DESCRIPTION INTRODUCTION Power supplies and battery chargers require precise control of output voltage and current in order to prevent catastrophic damage to the system connected. Many present day power sources contain a wide assortment of building blocks and glue devices to perform the required sensing for proper regulation. Typical feedback loop circuits may consist of a voltage and current amplifier, summing circuitry and a reference. The NCP4300A contains all of these basic functions in a manner that is easily adaptable to many of the various power source−load configurations. reference is initially trimmed to a ±0.5% tolerance at TA = 25_C and is guaranteed to be within ±1.0% over an ambient temperature range of 0_C to 105_C. Voltage Sensing Operational Amplifier (Op−Amp 1) The internal Op−Amp 1 is designed to perform the voltage control function. The non−inverting input of the op−amp is connected to the precision voltage reference internally. The inverting input of the op−amp monitors the voltage information derived from the system output. As the control threshold is internally connected to the voltage reference, the voltage regulation threshold is fixed at 2.6 V. For any output voltage from 2.6 V up to the maximum limit can be configurated with an external resistor divider. The output terminal of Op−Amp 1 (pin 1) provides the error signal for output voltage control. The output pin also provides a means for external compensation. OPERATING DESCRIPTION The NCP4300A is an analog regulation control circuit that is designed to simultaneously close the voltage and current feedback loops in power supply and battery charger applications. This device can control the feedback loop in either constant−voltage (CV) or constant−current (CC) mode with smooth crossover. A concise description of the integrated circuit blocks is given in below. The functional block diagram of the IC is shown in Figure 1. Independent Operational Amplifier (Op−Amp 2) The internal Op−Amp 2 is configurated as a general purpose op−amp with all terminals available for the user. With the low offset voltage provided, 0.5 mV, this op−amp can be used for current sensing in a constant current regulator. Internal Reference An internal precision band gap reference is used to set the 2.6 V voltage threshold and current threshold setting. The http://onsemi.com 5 NCP4300A Opto Isolator 8 6 - AC Line 7 SMPS Iout + + 2.6 V + 2 Battery Pack R1 Vout 1 5 − 3 4 R3 R2 R4 R5 Current Sense The above circuit demonstrates the use of the NCP4300A in a constant−current constant−voltage switch mode battery charger application. The charging current level is set by resistors R3, R4, and R5. The reference voltage is divided down by resistors R3 and R4 to create an offset voltage at pin 6. This results in a high state at the op amp output, pin 7. As the battery pack charge current increases, a proportional increasing voltage is developed across R5 that will eventually cancel out the pin 6 offset voltage. This will cause the op amp output to sink current from the opto isolator diode, and control the SMPS block in a constant−current mode. Resistors R1 and R2 divide the battery pack voltage down to the 2.6 V reference level. As the battery pack voltage exceeds the desired programmed level, the voltage at pin 2 will become slightly greater than pin 3. This will cause the op amp output to sink current from the opto isolator diode, and control the SMPS block in a constant−voltage mode. The formulas for programming the output current and voltage are given below. Iout + ǒ Vref R3 ) 1 R5 R4 ǒ Ǔ Vout + R1 ) 1 Vref R2 Ǔ With : R3 + 30 k R4 + 1.2 k R5 + 0.1 Iout + 1.0 A With : R1 + 4.7 k R2 + 3.6 k Vout + 6.0 V Figure 9. Constant−Current Constant−Voltage Switch Mode Battery Charger http://onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK 8 1 SCALE 1:1 −X− DATE 16 FEB 2011 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S 8 8 1 1 IC 4.0 0.155 XXXXX A L Y W G IC (Pb−Free) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package XXXXXX AYWW 1 1 Discrete XXXXXX AYWW G Discrete (Pb−Free) XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 1.270 0.050 SCALE 6:1 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 8 8 XXXXX ALYWX G XXXXX ALYWX 1.52 0.060 0.6 0.024 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 7.0 0.275 DIM A B C D G H J K M N S mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−8 NB CASE 751−07 ISSUE AK DATE 16 FEB 2011 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER STYLE 2: PIN 1. COLLECTOR, DIE, #1 2. COLLECTOR, #1 3. COLLECTOR, #2 4. COLLECTOR, #2 5. BASE, #2 6. EMITTER, #2 7. BASE, #1 8. EMITTER, #1 STYLE 3: PIN 1. DRAIN, DIE #1 2. DRAIN, #1 3. DRAIN, #2 4. DRAIN, #2 5. GATE, #2 6. SOURCE, #2 7. GATE, #1 8. SOURCE, #1 STYLE 4: PIN 1. ANODE 2. ANODE 3. ANODE 4. ANODE 5. ANODE 6. ANODE 7. ANODE 8. COMMON CATHODE STYLE 5: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. DRAIN 5. GATE 6. GATE 7. SOURCE 8. SOURCE STYLE 6: PIN 1. SOURCE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. GATE 7. GATE 8. SOURCE STYLE 7: PIN 1. INPUT 2. EXTERNAL BYPASS 3. THIRD STAGE SOURCE 4. GROUND 5. DRAIN 6. GATE 3 7. SECOND STAGE Vd 8. FIRST STAGE Vd STYLE 8: PIN 1. COLLECTOR, DIE #1 2. BASE, #1 3. BASE, #2 4. COLLECTOR, #2 5. COLLECTOR, #2 6. EMITTER, #2 7. EMITTER, #1 8. COLLECTOR, #1 STYLE 9: PIN 1. EMITTER, COMMON 2. COLLECTOR, DIE #1 3. COLLECTOR, DIE #2 4. EMITTER, COMMON 5. EMITTER, COMMON 6. BASE, DIE #2 7. BASE, DIE #1 8. EMITTER, COMMON STYLE 10: PIN 1. GROUND 2. BIAS 1 3. OUTPUT 4. GROUND 5. GROUND 6. BIAS 2 7. INPUT 8. GROUND STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 14: PIN 1. N−SOURCE 2. N−GATE 3. P−SOURCE 4. P−GATE 5. P−DRAIN 6. P−DRAIN 7. N−DRAIN 8. N−DRAIN STYLE 15: PIN 1. ANODE 1 2. ANODE 1 3. ANODE 1 4. ANODE 1 5. CATHODE, COMMON 6. CATHODE, COMMON 7. CATHODE, COMMON 8. CATHODE, COMMON STYLE 16: PIN 1. EMITTER, DIE #1 2. BASE, DIE #1 3. EMITTER, DIE #2 4. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE #1 8. COLLECTOR, DIE #1 STYLE 17: PIN 1. VCC 2. V2OUT 3. V1OUT 4. TXE 5. RXE 6. VEE 7. GND 8. ACC STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE STYLE 19: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. MIRROR 2 7. DRAIN 1 8. MIRROR 1 STYLE 20: PIN 1. SOURCE (N) 2. GATE (N) 3. SOURCE (P) 4. GATE (P) 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 21: PIN 1. CATHODE 1 2. CATHODE 2 3. CATHODE 3 4. CATHODE 4 5. CATHODE 5 6. COMMON ANODE 7. COMMON ANODE 8. CATHODE 6 STYLE 22: PIN 1. I/O LINE 1 2. COMMON CATHODE/VCC 3. COMMON CATHODE/VCC 4. I/O LINE 3 5. COMMON ANODE/GND 6. I/O LINE 4 7. I/O LINE 5 8. COMMON ANODE/GND STYLE 23: PIN 1. LINE 1 IN 2. COMMON ANODE/GND 3. COMMON ANODE/GND 4. LINE 2 IN 5. LINE 2 OUT 6. COMMON ANODE/GND 7. COMMON ANODE/GND 8. LINE 1 OUT STYLE 24: PIN 1. BASE 2. EMITTER 3. COLLECTOR/ANODE 4. COLLECTOR/ANODE 5. CATHODE 6. CATHODE 7. COLLECTOR/ANODE 8. COLLECTOR/ANODE STYLE 25: PIN 1. VIN 2. N/C 3. REXT 4. GND 5. IOUT 6. IOUT 7. IOUT 8. IOUT STYLE 26: PIN 1. GND 2. dv/dt 3. ENABLE 4. ILIMIT 5. SOURCE 6. SOURCE 7. SOURCE 8. VCC STYLE 29: PIN 1. BASE, DIE #1 2. EMITTER, #1 3. BASE, #2 4. EMITTER, #2 5. COLLECTOR, #2 6. COLLECTOR, #2 7. COLLECTOR, #1 8. COLLECTOR, #1 STYLE 30: PIN 1. DRAIN 1 2. DRAIN 1 3. GATE 2 4. SOURCE 2 5. SOURCE 1/DRAIN 2 6. SOURCE 1/DRAIN 2 7. SOURCE 1/DRAIN 2 8. GATE 1 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB STYLE 27: PIN 1. ILIMIT 2. OVLO 3. UVLO 4. INPUT+ 5. SOURCE 6. SOURCE 7. SOURCE 8. DRAIN STYLE 28: PIN 1. SW_TO_GND 2. DASIC_OFF 3. DASIC_SW_DET 4. GND 5. V_MON 6. VBULK 7. VBULK 8. VIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
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