NCP4420DR2

NCP4420, NCP4429 6 A High-Speed MOSFET Drivers The NCP4420/NCP4429 are 6 A (peak), single output, MOSFET drivers. The NCP4429 is an inverting driver while the NCP4420 is a non–inverting driver. These drivers are fabricated in CMOS for lower power and more efficient operation versus bipolar drivers. Both drivers have TTL–compatible inputs, which can be driven as high as VDD + 0.3 V or as low as –5 V without upset or damage to the device. This eliminates the need for external level shifting circuitry and its associated cost and size. The output swing is rail–to–rail ensuring better drive voltage margin, especially during power up/power down sequencing. Propagational delay time is only 55 nsec (typ.) and the output rise and fall times are only 25 nsec (typ.) into 2500 pF across the useable power supply range. Unlike other drivers, the NCP4420/NCP4429 are virtually latch–up proof. They can replace three or more discrete components saving PCB area, costs and improving overall system reliability. Features http://onsemi.com MARKING DIAGRAM 8 8 1 SO–8 D SUFFIX CASE 751 1 8 PDIP–8 P SUFFIX CASE 626 1 x YY, Y WW X Z CO = Device Number (0 or 9) = Year = Work Week = Assembly ID Code = Subcontractor ID Code = Country of Orgin NCP442x YYWWXZ CO NCP 442x YWWXZ • • • • • • • • • • • • • • • • • NCP4420D NCP4429D Latch–Up Protected: Will Withstand 1.5 A Reverse Output Current Logic Input Will Withstand Negative Swing Up to 5 V ESD Protected (4 kV) Matched Rise and Fall Times (25 nsec) High Peak Output Current (6 A Peak) Wide Operating Range (4.5 V to 18 V) High Capacitive Load Drive (10,000 pF) Short Delay Time (55 nsec Typ) Logic High Input, any Voltage (2.4 V to VDD) Low Supply Current with Logic “1’’ Input (450 µA) Low Output Impedance (2.5 Ω) Output Voltage Swing to within 25 mV of Ground or VDD Temperature Range –40°C to +85°C u 8 1 PIN CONNECTIONS 8–Pin SOIC VDD INPUT NC GND 1 2 3 4 8 7 6 5 VDD OUTPUT OUTPUT GND Applications (Top View) Switch–Mode Power Supplies Motor Controls Pulse Transformer Driver Class D Switching Amplifiers ORDERING INFORMATION Device NCP4420DR2 Non–Inverting NCP4429DR2 Inverting NCP4420P Non–Inverting NCP4429P Inverting Package SO–8 SO–8 PDIP–8 PDIP–8 Shipping 2500 Tape & Reel 2500 Tape & Reel 50 Units/Rail 50 Units/Rail © Semiconductor Components Industries, LLC, 2000 1 June, 2000 – Rev. 0 Publication Order Number: NCP4420/D NCP4420, NCP4429 FUNCTIONAL BLOCK DIAGRAM VDD 500 µA 300 mV OUTPUT NCP4429 INPUT 4.7 V GND EFFECTIVE INPUT C = 38 pF NCP4420 ABSOLUTE MAXIMUM RATINGS* Rating Supply Voltage Input Voltage Value +20 –5.0 to VDD 50 470 730 mW/°C 4.0 8.0 –65 to +150 +150 –40 to +85 +300 °C °C °C °C Unit V V mA mW u VDD) Power Dissipation, TA v 70°C Input Current (VIN SOIC PDIP Derating Factors (To Ambient) SOIC PDIP Storage Temperature Range, Tstg Operating Temperature (Chip) Operating Temperature Range (Ambient), TA Lead Temperature (Soldering, 10 sec) *Static–sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under “Absolute Maximum Ratings’’ may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (TA = +25°C with 4.5 V Characteristic Input Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Voltage Range Input Current Output High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low VOH VOL ROH ROL VIH VIL VIN (Max) IIN Symbol v VDD v 18 V, unless otherwise specified.) Min Typ Max Unit – – 2.4 – –5.0 –10 1.8 1.3 – – – 0.8 VDD +0.3 10 V V V µA Test Conditions 0V v VIN v VDD – See Figure 1 See Figure 1 IOUT = 10 mA, VDD = 18 V IOUT = 10 mA, VDD = 18 V VDD –0.025 – – – – – 2.1 1.5 – 0.025 2.8 2.5 V V Ω Ω http://onsemi.com 2 NCP4420, NCP4429 Characteristic Output Peak Output Current Latch–Up Protection Withstand Reverse Current Switching Time (Note 1.) Rise Time Fall Time Delay Time 1 Delay Time 2 Power Supply Power Supply Current Operating Input Voltage 1. Switching times guaranteed by design. IS VDD VIN = 3.0 V VIN = 0 V – – – 4.5 0.45 55 – 1.5 150 18 mA µA V tR tF tD1 tD2 Figure 1, CL = 2500 pF Figure 1, CL = 2500 pF Figure 1 Figure 1 – – – – 25 25 55 55 35 35 75 75 nsec nsec nsec nsec IPK IREV VDD = 18 V (See Figure 5) Duty Cycle 2% t 300 µs – 1.5 6.0 – – – A A Symbol Test Conditions Min Typ Max Unit v v ELECTRICAL CHARACTERISTICS (Measured over operating temperature range with 4.5 V specified.) Characteristic Input Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Voltage Range Input Current Output High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Switching Time (Note 1.) Rise Time Fall Time Delay Time 1 Delay Time 2 Power Supply Power Supply Current Operating Input Voltage 1. Switching times guaranteed by design. IS VDD VIN = 3.0 V VIN = 0 V – – – 4.5 tR tF tD1 tD2 Figure 1, CL = 2500 pF Figure 1, CL = 2500 pF Figure 1 Figure 1 – – – – VOH VOL ROH ROL See Figure 1 See Figure 1 IOUT = 10 mA, VDD = 18 V IOUT = 10 mA, VDD = 18 V VIH VIL VIN (Max) IIN 0V – – 2.4 – –5.0 –10 Symbol Test Conditions Min v VDD v 18 V, unless otherwise Typ Max Unit – – – – – 0.8 VDD +0.3 10 V V V µA v VIN v VDD – VDD –0.025 – – – – – 3.0 2.3 – 0.025 5.0 5.0 V V Ω Ω 32 34 50 65 60 60 100 100 nsec nsec nsec nsec 0.45 60 – 3.0 400 18 mA µA V http://onsemi.com 3 NCP4420, NCP4429 VIL = 18 V 1 µF 1 0.1 µF 2 6 7 NCP4429 4 5 8 0.1 µF +5 V INPUT 0V +18 V OUTPUT INPUT OUTPUT CL = 2500 pF 0V 10% INPUT: 100 kHz, square wave, tRISE = tFALL ≤ 10 nS 10% 10% tD1 90% tF tD2 tR 90% 90% Figure 1. Switching Time Test Circuit TYPICAL CHARACTERISTICS 120 100 CL = 10,000 pF 80 TIME (ns) TIME (ns) 60 CL = 4700 pF 60 CL = 4700 pF 40 CL = 220 pF 20 0 20 CL = 220 pF 100 80 CL = 10,000 pF 40 5 7 9 VDD (V) 11 13 15 0 5 7 9 VDD (V) 11 13 15 Figure 2. Rise Time vs. Supply Voltage 50 CL = 2200 pF VDD = 18 V 100 80 60 Figure 3. Fall Time vs. Supply Voltage 40 VDD = 5 V TIME (ns) 30 TIME (ns) tFALL tRISE 40 VDD = 12 V 20 10 10 1000 CAPACITIVE LOAD (pF) 20 VDD = 18 V 0 –60 –20 20 TA (°C) 60 100 140 10,000 Figure 4. Rise and Fall Times vs. Temperature Figure 5. Rise Time vs. Capacitive Load http://onsemi.com 4 NCP4420, NCP4429 TYPICAL CHARACTERISTICS 100 80 65 60 60 DELAY TIME (ns) TIME (ns) 55 50 45 tD1 40 10 1000 CAPACITIVE LOAD (pF) 35 tD2 40 VDD = 5 V VDD = 12 V 20 VDD = 18 V 10000 4 6 8 10 12 14 SUPPLY VOLTAGE (V) 16 18 Figure 6. Fall Time vs. Capacitive Load Figure 7. Propagation Delay Time vs.Supply Voltage 84 50 CL = 2200 pF VDD = 18 V tD2 30 tD1 20 VDD = 15 V SUPPLY CURRENT (mA) 70 56 42 500 kHz 28 14 0 200 kHz 20 kHz 40 DELAY TIME (ns) 10 0 –60 –20 20 TA (°C) 60 100 140 0 100 1000 CAPACITIVE LOAD (pF) 10,000 Figure 8. Propagation Delay Time vs. Temperature Figure 9. Supply Current vs. Capacitive Load 1000 CL = 220 pF SUPPLY CURRENT (mA) 18 V 100 10 V R OUT ( Ω ) 5V 5 100 mA 4 10 mA 50 mA 10 3 0 2 0 100 1000 FREQUENCY (kHz) 10,000 5 7 9 VDD (V) 11 13 15 Figure 10. Supply Current vs. Frequency Figure 11. High–State Output Resistance http://onsemi.com 5 NCP4420, NCP4429 TYPICAL CHARACTERISTICS 2.5 200 LOAD = 2200 pF 160 DELAY TIME (ns) R OUT ( Ω ) 2 100 mA 50 mA 10 mA 120 INPUT 2.4 V INPUT 3 V INPUT 5 V 80 1.5 40 INPUT 8 V AND 10 V 1 5 7 9 VDD (V) 11 13 15 0 5 6 7 8 9 10 11 VDD (V) 12 13 14 15 Figure 12. Low–State Output Resistance Figure 13. Effect of Input Amplitude on Propagation Delay 4 CROSSOVER AREA (A• S) x 10–9 3 2 1 0 5 6 7 8 9 10 11 12 SUPPLY VOLTAGE (V) 13 14 15 Figure 14. Total nA•S Crossover* * The values on this graph represent the loss seen by the driver during one complete cycle. For a single transition, divide the value by 2. http://onsemi.com 6 NCP4420, NCP4429 PACKAGE DIMENSIONS PDIP–8 P SUFFIX CASE 626–05 ISSUE K NOTES: 1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). 3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. DIM A B C D F G H J K L M N MILLIMETERS MIN MAX 9.40 10.16 6.10 6.60 3.94 4.45 0.38 0.51 1.02 1.78 2.54 BSC 0.76 1.27 0.20 0.30 2.92 3.43 7.62 BSC ––– 10_ 0.76 1.01 INCHES MIN MAX 0.370 0.400 0.240 0.260 0.155 0.175 0.015 0.020 0.040 0.070 0.100 BSC 0.030 0.050 0.008 0.012 0.115 0.135 0.300 BSC ––– 10_ 0.030 0.040 8 5 –B– 1 4 F NOTE 2 –A– L C –T– SEATING PLANE J N D K M M H G 0.13 (0.005) TA M B M SO–8 D SUFFIX CASE 751–06 ISSUE T A 8 D 5 C E 1 4 H 0.25 M B M h B C e A SEATING PLANE X 45 _ NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETER. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A A1 B C D E e H h L MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.19 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ q L 0.10 A1 B 0.25 M CB S A S q http://onsemi.com 7 NCP4420, NCP4429 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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