NCP4425DWR2

NCP4423, NCP4424, NCP4425 3 A Dual High-Speed MOSFET Drivers The NCP4423/4424/4425 are MOSFET drivers that are capable of giving reliable service in demanding electrical environments. Although primarily intended for driving power MOSFETs, these drivers are well–suited for driving other loads (capacitive, resistive, or inductive) which require a low impedance driver capable of high peak currents and fast switching times. Applications such as heavily loaded clock lines, coaxial cables, or piezoelectric transducers can all be driven with the NCP4423/4424/4425. The only known limitation on loading is that the total power dissipated of the driver must be kept within the maximum power dissipation limits of the package. Features http://onsemi.com MARKING DIAGRAM 16 SO–16 DW SUFFIX CASE 751G 1 1 NCP442x YYWWXZ 16 • • • • • • • • • • High Peak Output Current (3 A) Wide Operating Range (4.5 V to 18 V) High Capacitive Load Drive Capability (1800 pF in 25 nsec) Short Delay Times (t40 nsec Typ) Matched Rise/Fall Times Low Supply Current With Logic “1’’ Input (3.5 mA) With Logic “0’’ Input (350 µA) Low Output Impedance (3.5 Ω Typ) Latch–Up Protected: Will Withstand 1.5 A Reverse Current Logic Input Will Withstand Negative Swing Up to 5 V ESD Protected (4 kV) 8 PDIP–8 P SUFFIX CASE 626 1 NCP442x YYWWXZ CO 8 1 x YY WW X Z CO = Device Number (3, 4, or 5) = Year = Work Week = Assembly ID Code = Subcontractor ID Code = Country of Origin ORDERING INFORMATION Device Package SO–16 SO–16 SO–16 PDIP–8 PDIP–8 PDIP–8 Shipping 1000 Tape & Reel 1000 Tape & Reel 1000 Tape & Reel 50 Units/Rail 50 Units/Rail 50 Units/Rail FUNCTIONAL BLOCK DIAGRAM VDD INVERTING 300 mV OUTPUT INPUT 4.7 V NCP4423 DUAL INVERTING NCP4424 DUAL NONINVERTING NCP4425 ONE INV., ONE NONINV GND EFFECTIVE INPUT C = 20 pF (EACH INPUT) NOTES: 1. NCP4425 has one inverting and one noninverting driver. 2. Ground any unused driver input. © Semiconductor Components Industries, LLC, 2000 NCP4423DWR2 NCP4424DWR2 NCP4425DWR2 NCP4423P NCP4424P NCP4425P NONINVERTING 1 October, 2000 – Rev. 1 Publication Order Number: NCP4423/D NCP4423, NCP4424, NCP4425 PIN CONNECTIONS 4423 4424 NC OUT A OUT A VDD VDD OUT B OUT B NC 4425 NC OUT A OUT A VDD VDD OUT B OUT B NC 1 2 3 4 16–Pin SO Wide NC IN A NC GND GND NC IN B NC 1 2 3 4 5 6 7 8 (Top View) NCP4423 NCP4424 NCP4425 8–Pin DIP NCP4423 NCP4424 NCP4425 8 7 6 5 16 NC 15 OUT A 14 OUT A 13 VDD 12 VDD 11 OUT B 10 OUT B 9 NC NC = NO CONNECTION NOTE: Duplicate pins must both be connected for proper operation. http://onsemi.com 2 NCP4423, NCP4424, NCP4425 ABSOLUTE MAXIMUM RATINGS Rating Supply Voltage Input Voltage, IN A or IN B (VDD + 0.3 V to GND – 5.0 V) Maximum Chip Temperature Storage Temperature Range, Tstg Lead Temperature (Soldering, 10 sec) Package Thermal Resistance SOIC, RθJA PDIP, RθJA PDIP, RθJC Operating Temperature Range Package Power Dissipation (TA v 70°C) SOIC PDIP Value +22 –5 +150 –65 to +150 +300 155 –125 –45 –40 to +85 470 730 °C mW mc Unit V V °C °C °C °C/W ELECTRICAL CHARACTERISTICS (TA = +25°C with 4.5 V v VDD v 18 V, unless otherwise specified.) Characteristic Input Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current Output High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Latch–Up Protection Withstand Reverse Current Switching Time (Note 1.) Rise Time Fall Time Delay Time 1 Delay Time 2 Power Supply Power Supply Current 1. Switching times guaranteed by design. IS VIN = 3.0 V (Both Inputs) VIN = 0 V (Both Inputs) – – 1.5 0.15 2.5 0.25 mA tR tF tD1 tD2 Figure 1, CL = 1800 pF Figure 1, CL = 1800 pF Figure 1, CL = 1800 pF Figure 1, CL = 1800 pF – – – – 23 25 33 38 35 35 75 75 nsec nsec nsec nsec VOH VOL ROH ROL IPK IREV – – IOUT = 10 mA, VDD = 18 V IOUT = 10 mA, VDD = 18 V – Duty Cycle v 2% t v 300 µs VDD –0.025 – – – – 1.5 – – 2.8 3.5 3.0 – – 0.025 5.0 5.0 – – V V Ω Ω A A VOH VIL IIN – – 0 V v VIN v VDD 2.4 – –1.0 – – – – 0.8 1.0 V V µA Symbol Test Conditions Min Typ Max Unit http://onsemi.com 3 NCP4423, NCP4424, NCP4425 ELECTRICAL CHARACTERISTICS (Over operating temperature range with 4.5 V v VDD v 18 V, unless otherwise specified.) Characteristic Input Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current Output High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Latch–Up Protection Withstand Reverse Current Switching Time (Note 1.) Rise Time Fall Time Delay Time 1 Delay Time 2 Power Supply Power Supply Current 1. Switching times guaranteed by design. IS VIN = 3.0 V (Both Inputs) VIN = 0 V (Both Inputs) – – 2.0 0.2 3.5 0.3 mA tR tF tD1 tD2 Figure 1, CL = 1800 pF Figure 1, CL = 1800 pF Figure 1, CL = 1800 pF Figure 1, CL = 1800 pF – – – – 28 32 32 38 60 60 100 100 nsec nsec nsec nsec VOH VOL RO RO IPK IREV – – IOUT = 10 mA, VDD = 18 V IOUT = 10 mA, VDD = 18 V – Duty Cycle v 2% t v 300 µsec VDD –0.025 – – – – 1.5 – – 3.7 4.3 3.0 – – 0.025 8.0 8.0 – – V V Ω Ω A A VIH VIL IIN – – 0 V v VIN v VDD 2.4 – –10 – – – – 0.8 10 V V µA Symbol Test Conditions Min Typ Max Unit Test Circuit VDD = 16 V 1 µF WIMA MKS–2 0.1 µF CERAMIC OUTPUT CL = 1800 pF Test Circuit VDD = 16 V 1 µF WIMA MKS–2 0.1 µF CERAMIC OUTPUT CL = 1800 pF INPUT INPUT: 100 kHz, square wave, tRISE = tFALL ≤ 10 ns 1 2 NCP4423 (1/2 NCP4425) INPUT INPUT: 100 kHz, square wave, tRISE = tFALL ≤ 10 ns 1 2 NCP4424 (1/2 NCP4425) +5 V INPUT 0V 16 V OUTPUT 0V 10% 10% tD1 90% tF 90% +5 V INPUT 90% 10% 90% tD1 10% tR 90% tD2 10% tD2 0V tR 90% 10% 16 V OUTPUT 0V tF Figure 1. Inverting Driver Switching Time Figure 2. Noninverting Driver Switching Time http://onsemi.com 4 NCP4423, NCP4424, NCP4425 TYPICAL ELECTRICAL CHARACTERISTICS 100 4700 pF 80 1000 pF t RISE (nsec) t FALL (nsec) 60 3300 pF 1500 pF 2200 pF 40 60 3300 pF 2200 pF 40 1500 pF 80 1000 pF 100 4700 pF 20 470 pF 0 4 6 8 10 VDD 12 14 16 18 20 470 pF 0 4 6 8 10 VDD 12 14 16 18 Figure 3. Rise Time vs. Supply Voltage 100 5V 100 Figure 4. Fall Time vs. Supply Voltage 80 t RISE (nsec) 80 t FALL (nsec) 5V 60 10 V 15 V 60 10 V 15 V 40 40 20 0 100 20 0 100 1000 CLOAD (pF) 10000 1000 CLOAD (pF) 10000 Figure 5. Rise Time vs. Capacitive Load 32 CLOAD = 2200 pF 30 28 TIME (ns) 26 24 22 20 18 –55 tRISE tFALL –35 –15 5 25 45 65 85 105 125 tRISE tFALL 80 DELAY TIME (ns) 100 Figure 6. Fall Time vs. Capacitive Load CLOAD = 2200 pF VDD = 10 V tD1 60 40 tD2 20 0 0 1 2 3 4 5 6 7 8 9 10 11 12 TA (°C) INPUT (V) Figure 7. Rise and Fall Times vs. Temperature Figure 8. Propagation Delay vs. Input Amplitude http://onsemi.com 5 NCP4423, NCP4424, NCP4425 TYPICAL ELECTRICAL CHARACTERISTICS 50 CLOAD = 2200 pF 45 DELAY TIME (ns) 40 35 30 25 20 4 6 8 10 VDD 12 14 16 18 tD2 tD2 DELAY TIME (ns) 45 40 35 tD2 30 25 20 –55 50 CLOAD = 2200 pF tD2 –35 –15 5 25 45 TA (°C) 65 85 105 125 Figure 9. Propagation Delay Time vs. Supply Voltage 1.4 1 I QUIESCENT (mA) TA = +25°C BOTH INPUTS = 1 I QUIESCENT (mA) 1.2 1.0 0.8 0.6 0.4 0.2 0.01 4 0.0 –55 Figure 10. Delay Time vs. Temperature INPUTS = 1 0.1 BOTH INPUTS = 0 INPUTS = 0 –35 –15 5 25 45 TA (°C) 65 85 105 125 6 8 10 VDD 12 14 16 18 Figure 11. Quiescent Current vs. Supply Voltage 14 12 WORST CASE @ TJ = +150°C RDS(ON) ( Ω ) RDS(ON) ( Ω ) 10 8 6 4 2 TYP @ TA = +25°C 10 8 6 4 2 14 12 Figure 12. Quiescent Current vs. Temperature WORST CASE @ TJ = +150°C TYP @ TA = +25°C 4 6 8 10 VDD 12 14 16 18 4 6 8 10 VDD 12 14 16 18 Figure 13. Output Resistance (Output High) vs. Supply Voltage Figure 14. Output Resistance (Output Low) vs. Supply Voltage http://onsemi.com 6 NCP4423, NCP4424, NCP4425 TYPICAL ELECTRICAL CHARACTERISTICS 60 VDD = 18 V 50 I SUPPLY (mA) 634 kHz 40 30 355 kHz 20 10 200 kHz 112.5 kHz 10 0 1000 CLOAD (pF) 10000 10 100 FREQUENCY (kHz) 1000 ISUPPLY (mA) 63.4 kHz 35.5 kHz 20 kHz 50 40 30 20 10,000 pF 100 pF 60 VDD = 18 V 3300 pF 1000 pF 0 100 Figure 15. Supply Current vs. Capacitive Load Figure 16. Supply Current vs. Frequency 90 90 80 70 ISUPPLY (mA) 60 50 40 30 634 kHz 20 10 0 100 1000 CLOAD (pF) 10000 355 kHz 1.125 MHz 20 kHz VDD = 12 V 2 MHz 200 kHz ISUPPLY (mA) 112.5 kHz 63.4 kHz 80 70 60 50 40 30 20 10 0 0 VDD = 12 V 3300 pF 1000 pF 10,000 pF 100 pF 100 FREQUENCY (kHz) 1000 Figure 17. Supply Current vs. Capacitive Load 120 VDD = 6 V 100 ISUPPLY (mA) 80 60 355 kHz 40 2 MHz 20 1.125 MHz 20 100 634 kHz ISUPPLY (mA) 355 kHz 112.5 kHz 20 kHz 80 60 40 Figure 18. Supply Current vs. Frequency 120 VDD = 6 V 4700 pF 10,000 pF 2200 pF 1000 pF 100 pF 100 pF 1000 CLOAD (pF) 10000 0 10 100 FREQUENCY (kHz) 1000 0 100 Figure 19. Supply Current vs. Capacitive Load Figure 20. Supply Current vs. Frequency http://onsemi.com 7 NCP4423, NCP4424, NCP4425 TYPICAL ELECTRICAL CHARACTERISTICS 10–8 8 6 4 2 A • sec 10–9 8 6 4 2 10–10 0 2 4 6 8 VIN 10 12 14 16 18 MAX. POWER (mA) 1400 1200 16 Pin SOIC 1000 800 600 400 200 0 0 20 40 60 80 100 120 140 AMBIENT TEMPERATURE (°C) Figure 21. NCP4423 Crossover Energy NOTE: The values on this graph represent the loss seen by both drivers in a package during one complete cycle. For a single driver, divide the stated values by 2. For a single transition of a single driver, divide the stated value by 4. Figure 22. Thermal Derating Curves Static–sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings (See page 2) may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability. http://onsemi.com 8 NCP4423, NCP4424, NCP4425 PACKAGE DIMENSIONS PDIP–8 P SUFFIX CASE 626–05 ISSUE K NOTES: 1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). 3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. DIM A B C D F G H J K L M N MILLIMETERS MIN MAX 9.40 10.16 6.10 6.60 3.94 4.45 0.38 0.51 1.02 1.78 2.54 BSC 0.76 1.27 0.20 0.30 2.92 3.43 7.62 BSC --10_ 0.76 1.01 INCHES MIN MAX 0.370 0.400 0.240 0.260 0.155 0.175 0.015 0.020 0.040 0.070 0.100 BSC 0.030 0.050 0.008 0.012 0.115 0.135 0.300 BSC --10_ 0.030 0.040 8 5 –B– 1 4 F NOTE 2 –A– L C –T– SEATING PLANE J N D K M M TA M H G 0.13 (0.005) B M SO–16 DW SUFFIX CASE 751G–03 ISSUE B D 16 M 9 A q NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS D AND E DO NOT INLCUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A A1 B C D E e H h L q MILLIMETERS MIN MAX 2.35 2.65 0.10 0.25 0.35 0.49 0.23 0.32 10.15 10.45 7.40 7.60 1.27 BSC 10.05 10.55 0.25 0.75 0.50 0.90 0_ 7_ H B 1 16X 8 B TA S B B S 0.25 M A h X 45 _ SEATING PLANE M 8X 0.25 E A1 14X e T C http://onsemi.com 9 L NCP4423, NCP4424, NCP4425 Notes http://onsemi.com 10 NCP4423, NCP4424, NCP4425 Notes http://onsemi.com 11 NCP4423, NCP4424, NCP4425 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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