NCP45520IMNTWG-H

ecoSWITCHt Advanced Load Management Controlled Load Switch with Low RON NCP45520, NCP45521 The NCP4552x series of load switches provide a component and area-reducing solution for efficient power domain switching with inrush current limit via soft start. In addition to integrated control functionality with ultra low on−resistance, these devices offer system safeguards and monitoring via fault protection and power good signaling. This cost effective solution is ideal for power management and hot-swap applications requiring low power consumption in a small footprint. Features • • • • • • • • • • • • Advanced Controller with Charge Pump Integrated N-Channel MOSFET with Low RON Input Voltage Range 0.5 V to 13.5 V Soft-Start via Controlled Slew Rate Adjustable Slew Rate Control (NCP45521) Power Good Signal (NCP45520) Thermal Shutdown Undervoltage Lockout Short-Circuit Protection Extremely Low Standby Current Load Bleed (Quick Discharge) This is a Pb−Free Device www.onsemi.com RON TYP VCC VIN 9.5 mW 3.3 V 1.8 V 10.1 mW 3.3 V 5.0 V 12.8 mW 3.3 V 12 V 1 DFN8, 2x2 CASE 506CC MARKING DIAGRAM 1 XX MG G XX = PH for NCP45520−H = PL for NCP45520−L = SH for NCP45521−H = SL for NCP45521−L M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Portable Electronics and Systems Notebook and Tablet Computers Telecom, Networking, Medical, and Industrial Equipment Set−Top Boxes, Servers, and Gateways Hot Swap Devices and Peripheral Ports VCC EN 10.5 A *IMAX_DC is defined as the maximum steady state current the load switch can pass at room ambient temperature without entering thermal lockout. Typical Applications • • • • • IMAX_DC* VIN PG* PIN CONFIGURATION Bandgap & Biases Thermal, Undervoltage & Short−Circuit Protection Control Logic VIN 1 8 VOUT EN 2 7 VOUT VCC 3 6 PG or SR GND 4 5 BLEED 9: VIN Charge Pump Delay and Slew Rate Control (Top View) SR* GND BLEED VOUT ORDERING INFORMATION Figure 1. Block Diagram (*Note: either PG or SR available for each part) © Semiconductor Components Industries, LLC, 2014 March, 2020 − Rev. 5 See detailed ordering and shipping information on page 14 of this data sheet. 1 Publication Order Number: NCP45520/D NCP45520, NCP45521 Table 1. PIN DESCRIPTION Pin Name Function 1, 9 VIN Drain of MOSFET (0.5 V – 13.5 V), Pin 1 must be connected to Pin 9 2 EN NCP45520−H & NCP45521−H − Active−high digital input used to turn on the MOSFET, pin has an internal pull down resistor to GND NCP45520−L & NCP45521−L − Active−low digital input used to turn on the MOSFET, pin has an internal pull up resistor to VCC 3 VCC Supply voltage to controller (3.0 V − 5.5 V) 4 GND Controller ground 5 BLEED 6 PG NCP45520 − Active−high, open−drain output that indicates when the gate of the MOSFET is fully charged, external pull up resistor ≥ 1 kW to an external voltage source required; tie to GND if not used SR NCP45521 − Slew rate adjustment; float if not used 7, 8 VOUT Load bleed connection, must be tied to VOUT either directly or through a resistor ≤ 1 kW Source of MOSFET connected to load Table 2. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VCC −0.3 to 6 V Supply Voltage Range Input Voltage Range VIN −0.3 to 18 V Output Voltage Range VOUT −0.3 to 18 V EN Digital Input Range VEN −0.3 to (VCC + 0.3) V PG Output Voltage Range (Note 1) VPG −0.3 to 6 V Thermal Resistance, Junction−to−Ambient, Steady State (Note 2) RθJA 40.0 °C/W Thermal Resistance, Junction−to−Ambient, Steady State (Note 3) RθJA 72.7 °C/W Thermal Resistance, Junction−to−Case (VIN Paddle) RθJC 5.3 °C/W Continuous MOSFET Current @ TA = 25°C (Notes 2 and 4) IMAX 10.5 A Continuous MOSFET Current @ TA = 25°C (Notes 3 and 4) IMAX 7.8 A Transient MOSFET Current (for up to 500 ms) IMAX_TRANS 24 A Total Power Dissipation @ TA = 25°C (Note 2) Derate above TA = 25°C PD 2.50 24.9 W mW/°C Total Power Dissipation @ TA = 25°C (Note 3) Derate above TA = 25°C PD 1.37 13.8 W mW/°C Storage Temperature Range TSTG −40 to 150 °C Lead Temperature, Soldering (10 sec.) TSLD 260 °C ESD Capability, Human Body Model (Notes 5 and 6) ESDHBM 3.0 kV ESD Capability, Machine Model (Note 5) ESDMM 200 V ESD Capability, Charged Device Model (Note 5) ESDCDM 1.0 kV LU 100 mA Latch−up Current Immunity (Notes 5 and 6) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. NCP45520 only. PG is an open−drain output that requires an external pull up resistor ≥ 1 kW to an external voltage source. 2. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. 4. Ensure that the expected operating MOSFET current will not cause the Short−Circuit Protection to turn the MOSFET off undesirably. 5. Tested by the following methods @ TA = 25°C: ESD Human Body Model tested per JESD22−A114 ESD Machine Model tested per JESD22−A115 ESD Charged Device Model tested per JESD22−C101 Latch−up Current tested per JESD78 6. Rating is for all pins except for VIN and VOUT which are tied to the internal MOSFET’s Drain and Source. Typical MOSFET ESD performance for VIN and VOUT should be expected and these devices should be treated as ESD sensitive. www.onsemi.com 2 NCP45520, NCP45521 Table 3. OPERATING RANGES Rating Symbol Min Max Unit Supply Voltage VCC 3 5.5 V Input Voltage VIN 0.5 13.5 V Ground 0 V Ambient Temperature GND TA −40 85 °C Junction Temperature TJ −40 125 °C ETRANS 0 100 mJ OFF to ON Transition Energy Dissipation Limit (See application section) Table 4. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Conditions (Note 7) Symbol Min Typ Max Unit 9.5 12.7 mW 10.1 13.9 MOSFET On−Resistance VCC = 3.3 V; VIN = 1.8 V RON VCC = 3.3 V; VIN = 5 V VCC = 3.3 V; VIN = 12 V Leakage Current (Note 8) 12.8 22.5 VEN = 0 V; VIN = 13.5 V ILEAK 0.1 1 mA VEN = 0 V; VCC = 3 V ISTBY 0.65 2 mA 3.2 4.5 280 400 CONTROLLER Supply Standby Current (Note 9) VEN = 0 V; VCC = 5.5 V Supply Dynamic Current (Note 10) VEN = VCC = 3 V; VIN = 12 V IDYN VEN = VCC = 5.5 V; VIN = 1.8 V Bleed Resistance RBLEED VEN = 0 V; VCC = 3 V VEN = 0 V; VCC = 5.5 V Bleed Pin Leakage Current VEN = VCC = 3 V, VIN = 1.8 V 530 750 86 115 144 72 97 121 6 10 60 70 IBLEED VEN = VCC = 3 V, VIN = 12 V EN Input High Voltage VCC = 3 V − 5.5 V VIH EN Input Low Voltage VCC = 3 V − 5.5 V VIL EN Input Leakage Current NCP45520−H; NCP45521−H; VEN = 0 V IIL NCP45520−L; NCP45521−L; VEN = 5.5 V IIH 2 mA W mA V 0.8 V 90 500 nA 90 500 EN Pull Down Resistance NCP45520−H; NCP45521−H RPD 76 100 124 kW EN Pull Up Resistance NCP45520−L; NCP45521−L RPU 76 100 124 kW PG Output Low Voltage (Note 11) NCP45520; VCC = 3 V; ISINK = 5 mA VOL 0.2 V PG Output Leakage Current (Note 12) NCP45520; VCC = 3 V; VTERM = 3.3 V IOH 5 100 nA Slew Rate Control Constant (Note 13) NCP45521; VCC = 3 V KSR 31 38 mA Thermal Shutdown Threshold (Note 14) VCC = 3 V − 5.5 V TSDT Thermal Shutdown Hysteresis (Note 14) VCC = 3 V − 5.5 V THYS VIN Undervoltage Lockout Threshold VCC = 3 V VUVLO VIN Undervoltage Lockout Hysteresis VCC = 3 V VHYS 20 Short−Circuit Protection Threshold VCC = 3 V; VIN = 0.5 V VSC 200 100 285 500 24 FAULT PROTECTIONS VCC = 3 V; VIN = 13.5 V °C 145 °C 20 0.25 0.35 0.45 V 50 70 mV 265 350 mV Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. VEN shown only for NCP45520−H, NCP45521−H (EN Active−High) unless otherwise specified. 8. Average current from VIN to VOUT with MOSFET turned off. 9. Average current from VCC to GND with MOSFET turned off. 10. Average current from VCC to GND after charge up time of MOSFET. 11. PG is an open-drain output that is pulled low when the MOSFET is disabled. 12. PG is an open-drain output that is not driven when the gate of the MOSFET is fully charged, requires an external pull up resistor ≥ 1 kW to an external voltage source, VTERM. 13. See Applications Information section for details on how to adjust the slew rate. 14. Operation above TJ = 125°C is not guaranteed. www.onsemi.com 3 NCP45520, NCP45521 Table 5. SWITCHING CHARACTERISTICS (TJ = 25°C unless otherwise specified) (Notes 15 and 16) Parameter Conditions Symbol Min Typ VCC = 3.3 V; VIN = 1.8 V 12.1 SR VCC = 3.3 V; VIN = 12 V Output Turn−on Delay (Note 17) Output Turn−off Delay (Note 17) Power Good Turn−on Time (Note 18) Power Good Turn−off Time (Note 18) 13.5 VCC = 5.0 V; VIN = 12 V 13.9 VCC = 3.3 V; VIN = 1.8 V 220 VCC = 5.0 V; VIN = 1.8 V 185 TON VCC = 3.3 V; VIN = 12 V 270 VCC = 5.0 V; VIN = 12 V 260 VCC = 3.3 V; VIN = 1.8 V 1.2 VCC = 5.0 V; VIN = 1.8 V 0.9 TOFF VCC = 3.3 V; VIN = 12 V 0.4 VCC = 5.0 V; VIN = 12 V 0.2 VCC = 3.3 V; VIN = 1.8 V 0.91 VCC = 5.0 V; VIN = 1.8 V 1.33 VCC = 5.0 V; VIN = 12 V 1.21 VCC = 3.3 V; VIN = 1.8 V 21 VCC = 5.0 V; VIN = 1.8 V 21 VCC = 5.0 V; VIN = 12 V 15 15. See below figure for Test Circuit and Timing Diagram. 16. Tested with the following conditions: VTERM = VCC; RPG = 100 kW; RL = 10 W; CL = 0.1 mF. 17. Applies to NCP45520 and NCP45521. 18. Applies only to NCP45520. VTERM RPG VIN PG NCP4552x−H GND VEN RL SR 50% TON CL 50% Dt TOFF 90% VOUT VOUT BLEED VCC 10% DV SR = TPG,ON DV 90% Dt TPG,OFF 50% 50% VPG Figure 2. Switching Characteristics Test Circuit and Timing Diagram www.onsemi.com 4 ms ms ms 15 TPG,OFF VCC = 3.3 V; VIN = 12 V EN kV/s 0.93 TPG,ON VCC = 3.3 V; VIN = 12 V OFF ON Unit 11.9 VCC = 5.0 V; VIN = 1.8 V Output Slew Rate (Note 17) Max ns NCP45520, NCP45521 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) 16.5 20 15.5 18 RON, ON−RESISTANCE (mW) RON, ON−RESISTANCE (mW) VIN = 12 V 14.5 13.5 12.5 11.5 VCC = 3 V 10.5 VCC = 5.5 V 9.5 16 6.5 8.5 10.5 12 VIN = 1.8 V 10 8 6 −45 −30 −15 12.5 0 15 30 45 60 75 90 105 120 TJ, JUNCTION TEMPERATURE (°C) Figure 3. On−Resistance vs. Input Voltage Figure 4. On−Resistance vs. Temperature ISTBY, SUPPLY STANDBY CURRENT (mA) VIN, INPUT VOLTAGE (V) 3.0 2.5 2.0 1.5 1.0 0.5 3.5 4.0 4.5 5.0 5.5 7 6 5 4 VCC = 5.5 V 3 2 1 VCC = 3 V 0 −45 −30 −15 0 15 30 45 60 75 90 105 120 VCC, SUPPLY VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Supply Standby Current vs. Supply Voltage Figure 6. Supply Standby Current vs. Temperature IDYN, SUPPLY DYNAMIC CURRENT (mA) ISTBY, SUPPLY STANDBY CURRENT (mA) 4.5 3.5 3.0 IDYN, SUPPLY DYNAMIC CURRENT (mA) 2.5 VIN = 5.0 V 14 8.5 0.5 VCC = 3.3 V 550 500 450 400 350 300 VCC = 5.5 V 250 VCC = 3 V 200 150 0.5 2.5 4.5 6.5 8.5 10.5 600 550 500 VIN = 1.8 V 450 400 350 300 VIN = 12 V 250 200 150 3.0 12.5 3.5 4.0 4.5 5.0 5.5 VIN, INPUT VOLTAGE (V) VCC, SUPPLY VOLTAGE (V) Figure 7. Supply Dynamic Current vs. Input Voltage Figure 8. Supply Dynamic Current vs. Supply Voltage www.onsemi.com 5 NCP45520, NCP45521 TYPICAL CHARACTERISTICS 115 700 RBLEED, BLEED RESISTANCE (W) IDYN, SUPPLY DYNAMIC CURRENT (mA) (TJ = 25°C unless otherwise specified) VCC = 5.5 V, VIN = 1.8 V 650 600 550 500 450 400 350 300 250 200 −45 VCC = 3.0 V, VIN = 12 V 110 105 100 95 −15 15 45 75 105 3.0 4.5 5.0 5.5 TJ, JUNCTION TEMPERATURE (°C) VCC, SUPPLY VOLTAGE (V) Figure 10. Bleed Resistance vs. Supply Voltage 70 IBLEED, BLEED PIN LEAKAGE CURRENT (mA) 135 VCC = 3 V 125 115 VCC = 5.5 V 105 95 85 −45 60 VCC = 3 V 50 VCC = 5.5 V 40 30 20 10 0 −15 15 45 75 105 0.5 2.5 4.5 6.5 8.5 10.5 12.5 TJ, JUNCTION TEMPERATURE (°C) VIN, INPUT VOLTAGE (V) Figure 11. Bleed Resistance vs. Temperature Figure 12. Bleed Pin Leakage Current vs. Input Voltage IPD/PU, EN PULL DOWN/UP RESISTANCE (kW) RBLEED, BLEED RESISTANCE (W) 4.0 Figure 9. Supply Dynamic Current vs. Temperature 145 IBLEED, BLEED PIN LEAKAGE CURRENT (mA) 3.5 80 70 VCC = 3 V, VIN = 12 V 60 50 40 30 20 VCC = 3 V, VIN = 1.8 V 10 0 −45 −15 15 45 75 105 120 115 110 105 100 95 90 85 −45 −15 15 45 75 105 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 13. Bleed Pin Leakage Current vs. Temperature Figure 14. EN Pull Down/Up Resistance vs. Temperature www.onsemi.com 6 NCP45520, NCP45521 TYPICAL CHARACTERISTICS ISINK = 5 mA 0.135 0.130 0.125 0.120 0.115 0.110 3.0 3.5 4.0 4.5 5.0 5.5 0.20 ISINK = 5 mA 0.18 VCC = 3 V 0.16 0.14 VCC = 5.5 V 0.12 0.10 0.08 −45 −15 15 45 75 105 TJ, JUNCTION TEMPERATURE (°C) Figure 15. PG Output Low Voltage vs. Supply Voltage Figure 16. PG Output Low Voltage vs. Temperature KSR, SLEW RATE CONTROL CONSTANT (mA) VCC, SUPPLY VOLTAGE (V) 34 33 VCC = 5.5 V 32 VCC = 3 V 31 30 29 VSC, SHORT−CIRCUIT PROTECTION THRESHOLD (mV) KSR, SLEW RATE CONTROL CONSTANT (mA) VOL, PG OUTPUT LOW VOLTAGE (V) 0.140 0.5 2.5 4.5 6.5 8.5 10.5 12.5 35 34 VCC = 5.5 V 33 32 31 VCC = 3 V 30 29 28 −45 −15 15 45 75 105 VIN, INPUT VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 17. Slew Rate Control Constant vs. Input Voltage Figure 18. Slew Rate Control Constant vs. Temperature 15 320 SR, OUTPUT SLEW RATE (kV/s) VOL, PG OUTPUT LOW VOLTAGE (V) (TJ = 25°C unless otherwise specified) 310 VCC = 5.5 V 300 290 VCC = 3 V 280 270 260 14 VCC = 5.5 V 13 VCC = 3 V 12 11 10 9 8 250 0.5 2.5 4.5 6.5 8.5 10.5 0.5 12.5 2.5 4.5 6.5 8.5 10.5 12.5 VIN, INPUT VOLTAGE (V) VIN, INPUT VOLTAGE (V) Figure 19. Short−Circuit Protection Threshold vs. Input Voltage Figure 20. Output Slew Rate vs. Input Voltage www.onsemi.com 7 NCP45520, NCP45521 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) 13.0 12.5 12.0 VCC = 5 V, VIN = 1.8 V 11.5 11.0 −20 0 20 40 60 80 100 310 290 270 VCC = 3 V 250 VCC = 5.5 V 230 210 190 170 150 120 0.5 2.5 4.5 6.5 8.5 10.5 12.5 TJ, JUNCTION TEMPERATURE (°C) VIN, INPUT VOLTAGE (V) Figure 21. Output Slew Rate vs. Temperature Figure 22. Output Turn−on Delay vs. Input Voltage 300 TOFF, OUTPUT TURN−OFF DELAY (ms) TON, OUTPUT TURN−ON DELAY (ms) 10.5 −40 TOFF, OUTPUT TURN−OFF DELAY (ms) TON, OUTPUT TURN−ON DELAY (ms) VCC = 3.3 V, VIN = 12 V 13.5 VCC = 3.3 V, VIN = 12 V 275 250 225 200 VCC = 5 V, VIN = 1.8 V 175 150 −40 −20 0 20 40 60 80 100 1.6 1.4 1.2 1.0 VCC = 3 V 0.8 0.6 VCC = 5.5 V 0.4 0.2 0 0.5 2.5 4.5 6.5 8.5 10.5 12.5 TJ, JUNCTION TEMPERATURE (°C) VIN, INPUT VOLTAGE (V) Figure 23. Output Turn−on Delay vs. Temperature Figure 24. Output Turn−off Delay vs. Input Voltage 1.8 1.2 VCC = 5 V, VIN = 1.8 V 1.0 0.8 0.6 VCC = 3.3 V, VIN = 12 V 0.4 0.2 −40 1.8 120 TPG,ON, PG TURN−ON TIME (ms) SR, OUTPUT SLEW RATE (kV/s) 14.0 −20 0 20 40 60 80 100 1.7 1.6 1.5 1.4 VCC = 3 V 1.3 1.2 1.1 VCC = 5.5 V 1.0 0.9 0.8 0.5 120 2.5 4.5 6.5 8.5 10.5 12.5 TJ, JUNCTION TEMPERATURE (°C) VIN, INPUT VOLTAGE (V) Figure 25. Output Turn−off Delay vs. Temperature Figure 26. Power Good Turn−on Time vs. Input Voltage www.onsemi.com 8 NCP45520, NCP45521 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) 24 TPG,OFF, PG TURN−OFF TIME (ns) 1.4 VCC = 3.3 V, VIN = 12 V 1.3 1.2 1.1 1.0 VCC = 5 V, VIN = 1.8 V 0.9 0.8 −40 22 VIN = 13.5 V 20 VIN = 0.5 V 18 16 14 12 −20 0 20 40 60 80 3.0 120 100 3.5 4.0 4.5 5.0 TJ, JUNCTION TEMPERATURE (°C) VCC, SUPPLY VOLTAGE (V) Figure 27. Power Good Turn−on Time vs. Temperature Figure 28. Power Good Turn−off Time vs. Supply Voltage 27.5 TPG,OFF, PG TURN−OFF TIME (ns) TPG,ON, PG TURN−ON TIME (ms) 1.5 25.0 VCC = 3.3 V, VIN = 12 V 22.5 20.0 17.5 VCC = 5 V, VIN = 1.8 V 15.0 12.5 10.0 −40 −20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) Figure 29. Power Good Turn−off Time vs. Temperature www.onsemi.com 9 120 5.5 NCP45520, NCP45521 APPLICATIONS INFORMATION Enable Control than or equal to 1 kW to an external voltage source, VTERM, that is compatible with input levels of all devices connected to this pin (as shown in Figures 30 and 31). The power good output can be used as the enable signal for other active−high devices in the system (as shown in Figure 32). This allows for guaranteed by design power sequencing and reduces the number of enable signals needed from the system controller. If the power good feature is not used in the application, the PG pin should be tied to GND. Both the NCP45520 and the NCP45521 have two part numbers, NCP4552x-H and NCP4552x-L, that only differ in the polarity of the enable control. The NCP4552x-H devices allow for enabling the MOSFET in an active-high configuration. When the VCC supply pin has an adequate voltage applied and the EN pin is at a logic high level, the MOSFET will be enabled. Similarly, when the EN pin is at a logic low level, the MOSFET will be disabled. An internal pull down resistor to ground on the EN pin ensures that the MOSFET will be disabled when not being driven. The NCP4552x-L devices allow for enabling the MOSFET in an active-low configuration. When the VCC supply pin has an adequate voltage applied and the EN pin is at a logic low level, the MOSFET will be enabled. Similarly, when the EN pin is at a logic high level, the MOSFET will be disabled. An internal pull up resistor to VCC on the EN pin ensures that the MOSFET will be disabled when not being driven. Slew Rate Control The NCP4552x devices are equipped with controlled output slew rate which provides soft start functionality. This limits the inrush current caused by capacitor charging and enables these devices to be used in hot swap applications. The slew rate of the NCP45521 can be decreased with an external capacitor added between the SR pin and ground (as shown in Figures 33 and 34). With an external capacitor present, the slew rate can be determined by the following equation: Slew Rate + Power Sequencing K SR [Vńs] C SR (eq. 1) The NCP4552x devices will function with any power sequence, but the output turn−on delay performance may vary from what is specified. To achieve the specified performance, there are two recommended power sequences: 1) VCC → VIN → VEN 2) VIN → VCC → VEN VCC must be at 2 V or higher when EN is asserted to ensure that the enable is latched properly for correct operation. If EN comes up before VCC reaches 2 V, then the EN may not take effect. where KSR is the specified slew rate control constant, found in Table 4, and CSR is the slew rate control capacitor added between the SR pin and ground. The slew rate of the device will always be the lower of the default slew rate and the adjusted slew rate. Therefore, if the CSR is not large enough to decrease the slew rate more than the specified default value, the slew rate of the device will be the default value. The SR pin can be left floating if the slew rate does not need to be decreased. Load Bleed (Quick Discharge) Short−Circuit Protection The NCP4552x devices have an internal bleed resistor, RBLEED, which is used to bleed the charge off of the load to ground after the MOSFET has been disabled. In series with the bleed resistor is a bleed switch that is enabled whenever the MOSFET is disabled. The MOSFET and the bleed switch are never concurrently active. It is required that the BLEED pin be connected to VOUT either directly (as shown in Figures 31 and 34) or through an external resistor, REXT (as shown in Figures 30 and 33). REXT should not exceed 1 kW and can be used to increase the total bleed resistance. Care must be taken to ensure that the power dissipated across RBLEED is kept at a safe level. The maximum continuous power that can be dissipated across RBLEED is 0.4 W. REXT can be used to decrease the amount of power dissipated across RBLEED. The NCP4552x devices are equipped with short−circuit protection that is used to help protect the part and the system from a sudden high−current event, such as the output, VOUT, being shorted to ground. This circuitry is only active when the gate of the MOSFET is fully charged. Once active, the circuitry monitors the difference in the voltage on the VIN pin and the voltage on the BLEED pin. In order for the VOUT voltage to be monitored through the BLEED pin, it is required that the BLEED pin be connected to VOUT either directly (as shown in Figures 31 and 34) or through a resistor, REXT (as shown in Figures 30 and 33), which should not exceed 1 kW. With the BLEED pin connected to VOUT, the short−circuit protection is able to monitor the voltage drop across the MOSFET. If the voltage drop across the MOSFET is greater than or equal to the short−circuit protection threshold voltage, the MOSFET is immediately turned off and the load bleed is activated. The part remains latched in this off state until EN is toggled or VCC supply voltage is cycled, at which point the MOSFET will be turned on in a controlled fashion with the normal output turn−on delay and slew rate. The current Power Good The NCP45520 devices have a power good output (PG) that can be used to indicate when the gate of the MOSFET is fully charged. The PG pin is an active-high, open-drain output that requires an external pull up resistor, RPG, greater www.onsemi.com 10 NCP45520, NCP45521 through the MOSFET that will cause a short−circuit event can be calculated by dividing the short−circuit protection threshold by the expected on−resistance of the MOSFET. switch transitions from an OFF state to an ON state. During this time, the resistance from VIN to VOUT transitions from high impedance to RON, and additional energy is dissipated in the device for a short period of time. The worst case energy dissipated during the OFF to ON transition can be approximated by the following equation: Thermal Shutdown The thermal shutdown of the NCP4552x devices protects the part from internally or externally generated excessive temperatures. This circuitry is disabled when EN is not active to reduce standby current. When an over-temperature condition is detected, the MOSFET is immediately turned off and the load bleed is activated. The part comes out of thermal shutdown when the junction temperature decreases to a safe operating temperature as dictated by the thermal hysteresis. Upon exiting a thermal shutdown state, and if EN remains active, the MOSFET will be turned on in a controlled fashion with the normal output turn-on delay and slew rate. E + 0.5 @ V IN @ ǒI INRUSH ) 0.8 @ I LOADǓ @ dt Where VIN is the voltage on the VIN pin, IINRUSH is the inrush current caused by capacitive loading on VOUT, and dt is the time it takes VOUT to rise from 0 V to VIN. IINRUSH can be calculated using the following equation: I INRUSH + dv @ C L dt The undervoltage lockout of the NCP4552x devices turns the MOSFET off and activates the load bleed when the input voltage, VIN, is less than or equal to the undervoltage lockout threshold. This circuitry is disabled when EN is not active to reduce standby current. If the VIN voltage rises above the undervoltage lockout threshold, and EN remains active, the MOSFET will be turned on in a controlled fashion with the normal output turn-on delay and slew rate. ecoSWITCH LAYOUT GUIDELINES Electrical Layout Considerations Correct physical PCB layout is important for proper low noise accurate operation of all ecoSWITCH products. Power Planes: The ecoSWITCH is optimized for extremely low Ron resistance, however, improper PCB layout can substantially increase source to load series resistance by adding PCB board parasitic resistance. Solid connections to the VIN and VOUT pins of the ecoSWITCH to copper planes should be used to achieve low series resistance and good thermal dissipation. The ecoSWITCH requires ample heat dissipation for correct thermal lockout operation. The internal FET dissipates load condition dependent amounts of power in the milliseconds following the rising edge of enable, and providing good thermal conduction from the packaging to the board is critical. Direct coupling of VIN to VOUT should be avoided, as this will adversely affect slew rates. The figure below shows an example of correct power plane layout. The number and location of pins for specific ecoSWITCH products may vary. This demonstrates large planes for both VIN and VOUT, while avoiding capacitive coupling between the two planes. Capacitive Load The peak in−rush current associated with the initial charging of the application load capacitance needs to stay below the specified IMAX. CL (capacitive load) should be less than Cmax as defined by the following equation: I max SR typ (eq. 4) Where dv/dt is the programmed slew rate, and CL is the capacitive loading on VOUT. To prevent thermal lockout or damage to the device, the energy dissipated during the OFF to ON transition should be limited to ETRANS listed in operating ranges table. Undervoltage Lockout C max + (eq. 3) (eq. 2) Where IMAX is the maximum load current, and SRtyp is the typical default slew rate when no external load capacitor is added to the SR pin. OFF to ON Transition Energy Dissipation The energy dissipation due to load current traveling from VIN to VOUT is very low during steady state operation due to the low RON. When the EN signal is asserted high, the load www.onsemi.com 11 NCP45520, NCP45521 VTERM = 3.3 V RPG 100 kW 3.0 V − 5.5 V Power Supply or Battery 0.5 V − 13.5 V Controller VCC EN VIN PG Bandgap & Biases Control Logic Charge Pump Delay and Slew Rate Control Thermal, Undervoltage & Short−Circuit Protection GND BLEED VOUT REXT Load Figure 30. NCP45520 Typical Application Diagram − Load Switch VCC 3.0 V − 5.5 V PG VTERM EN GND VIN 0.5 V − 13.5 V RPG BACKPLANE REMOVABLE CARD VCC EN Bandgap & Biases Control Logic Charge Pump Delay and Slew Rate Control VIN PG Thermal, Undervoltage & Short−Circuit Protection GND BLEED VOUT Load Figure 31. NCP45520 Typical Application Diagram − Hot Swap www.onsemi.com 12 NCP45520, NCP45521 VTERM = 3.3 V EN PG EN PG RPG 10 kW Controller RPD 100 kW RPD 100 kW PG PG NCP45520−H NCP45520−H Figure 32. NCP45520 Simplified Application Diagram − Power Sequencing with PG Output Power Supply or Battery 3.0 V − 5.5 V Controller VCC 0.5 V − 13.5 V EN VIN Thermal, Undervoltage & Short−Circuit Protection Bandgap & Biases Control Logic Charge Pump Delay and Slew Rate Control SR GND BLEED CSR VOUT REXT Load Figure 33. NCP45521 Typical Application Diagram − Load Switch www.onsemi.com 13 NCP45520, NCP45521 VCC 3.0 V − 5.5 V GND EN VIN 0.5 V − 13.5 V BACKPLANE REMOVABLE CARD VCC EN Bandgap & Biases Control Logic Charge Pump Delay and Slew Rate Control VIN Thermal, Undervoltage & Short−Circuit Protection SR GND BLEED VOUT CSR Load Figure 34. NCP45521 Typical Application Diagram − Hot Swap ORDERING INFORMATION Device Pin 6 Functionality EN Polarity NCP45520IMNTWG−H PG Active−High NCP45520IMNTWG−L PG Active−Low NCP45521IMNTWG−H SR Active−High NCP45521IMNTWG−L SR Active−Low Package Shipping† DFN8 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ecoSWITCH is a trademark of Semiconductor Components Industries, LLC (SCILLC). www.onsemi.com 14 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8 2x2, 0.5P CASE 506CC ISSUE A 1 SCALE 2:1 A D PIN ONE REFERENCE 2X B L ÇÇ ÇÇ 0.10 C DETAIL A ALTERNATE CONSTRUCTIONS TOP VIEW DETAIL B EXPOSED Cu A A3 A1 A1 SIDE VIEW NOTE 4 DETAIL A 1 D2 4 C 8 5 0.10 C A B 0.05 C 1.70 XX MG G (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. NOTE 3 RECOMMENDED SOLDERING FOOTPRINT* PACKAGE OUTLINE MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.20 0.30 2.00 BSC 1.50 1.70 2.00 BSC 0.80 1.00 0.50 BSC 0.20 REF 0.18 0.38 −−− 0.15 0.14 REF XX = Specific Device Code M = Date Code G = Pb−Free Package K b BOTTOM VIEW DIM A A1 A3 b D D2 E E2 e K L L1 M 1 8X e e/2 A3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. GENERIC MARKING DIAGRAM* L 8X DETAIL B ALTERNATE CONSTRUCTION SEATING PLANE E2 M ÇÇ ÇÇ ÉÉ MOLD CMPD 0.10 C 0.08 C L L1 E 0.10 C 2X DATE 24 JUN 2014 8X 0.50 0.20 2.30 1.00 1 8X 0.50 PITCH 0.30 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON67172E DFN8 2X2, 0.5P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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