ecoSWITCHt
Advanced Load Management
Controlled Load Switch with Low RON
NCP45560
The NCP45560 load switch provides a component and
area-reducing solution for efficient power domain switching with
inrush current limit via soft−start. In addition to integrated control
functionality with ultra low on−resistance, this device offers system
safeguards and monitoring via fault protection and power good
signaling. This cost effective solution is ideal for power management
and hot-swap applications requiring low power consumption in a
small footprint.
Features
•
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•
•
•
•
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RON TYP
VCC
VIN
4.1 mW
3.3 V
1.8 V
4.3 mW
3.3 V
5.0 V
4.9 mW
3.3 V
12 V
1
DFN12, 3x3
CASE 506CD
MARKING DIAGRAM
NCP45
560−x
ALYWG
G
x = H for NCP45560−H
= L for NCP45560−L
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
Portable Electronics and Systems
Notebook and Tablet Computers
Telecom, Networking, Medical, and Industrial Equipment
Set−Top Boxes, Servers, and Gateways
Hot−Swap Devices and Peripheral Ports
VCC
EN
17 A
*IMAX_DC is defined as the maximum steady state
current the load switch can pass at room ambient
temperature without entering thermal lockout.
Advanced Controller with Charge Pump
Integrated N-Channel MOSFET with Ultra Low RON
Input Voltage Range 0.5 V to 13.5 V
Soft-Start via Controlled Slew Rate
Adjustable Slew Rate Control
Power Good Signal
Thermal Shutdown
Undervoltage Lockout
Short-Circuit Protection
Extremely Low Standby Current
Load Bleed (Quick Discharge)
This is a Pb−Free Device
Typical Applications
•
•
•
•
•
IMAX_DC*
VIN
PG
PIN CONFIGURATION
Bandgap
&
Biases
Charge
Pump
Thermal,
Undervoltage
&
Short−Circuit
Protection
Control
Logic
Delay and
Slew Rate
Control
VIN
1
12
VOUT
EN
2
11
VOUT
VCC
3
10
VOUT
GND
4
9
VOUT
SR
5
8
VOUT
PG
6
7
BLEED
13: VIN
(Top View)
SR
GND
BLEED
VOUT
© Semiconductor Components Industries, LLC, 2015
May, 2020 − Rev. 7
ORDERING INFORMATION
See detailed ordering and shipping information on page 13 of
this data sheet.
Figure 1. Block Diagram
1
Publication Order Number:
NCP45560/D
NCP45560
Table 1. PIN DESCRIPTION
Pin
Name
Function
1, 13
VIN
Drain of MOSFET (0.5 V – 13.5 V), Pin 1 must be connected to Pin 13
2
EN
NCP45560−H − Active−high digital input used to turn on the MOSFET, pin has an internal
pull down resistor to GND
NCP45560−L − Active−low digital input used to turn on the MOSFET, pin has an internal pull
up resistor to VCC
3
VCC
Supply voltage to controller (3.0 V − 5.5 V)
4
GND
Controller ground
5
SR
Slew rate adjustment; float if not used
6
PG
Active−high, open−drain output that indicates when the gate of the MOSFET is fully charged,
external pull up resistor ≥ 1 kW to an external voltage source required; tie to GND if not used.
7
BLEED
8−12
VOUT
Load bleed connection, must be tied to VOUT either directly or through a resistor
≤ 1 kW
Source of MOSFET connected to load
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage Range
VCC
−0.3 to 6
V
Input Voltage Range
VIN
−0.3 to 18
V
VOUT
−0.3 to 18
V
EN Digital Input Range
VEN
−0.3 to (VCC + 0.3)
V
PG Output Voltage Range (Note 1)
VPG
−0.3 to 6
V
Thermal Resistance, Junction−to−Ambient, Steady State (Note 2)
RθJA
28.6
°C/W
Thermal Resistance, Junction−to−Ambient, Steady State (Note 3)
RθJA
49.7
°C/W
Thermal Resistance, Junction−to−Case (VIN Paddle)
RθJC
1.7
°C/W
Continuous MOSFET Current @ TA = 25°C (Notes 3 and 4)
IMAX
17
A
Output Voltage Range
Continuous MOSFET Current @ TA = 25°C (Notes 2 and 4)
IMAX
18.3
A
Transient MOSFET Current (for up to 500 ms)
IMAX_TRANS
40
A
Total Power Dissipation @ TA = 25°C (Note 2)
Derate above TA = 25°C
PD
3.49
34.9
W
mW/°C
Total Power Dissipation @ TA = 25°C (Note 3)
Derate above TA = 25°C
PD
2.01
20.1
W
mW/°C
TSTG
−40 to 150
°C
Storage Temperature Range
Lead Temperature, Soldering (10 sec.)
TSLD
260
°C
ESD Capability, Human Body Model (Notes 5 and 6)
ESDHBM
3.0
kV
ESD Capability, Machine Model (Note 5)
ESDMM
200
V
ESD Capability, Charged Device Model (Note 5)
ESDCDM
1.0
kV
LU
100
mA
Latch−up Current Immunity (Notes 5 and 6)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. PG is an open−drain output that requires an external pull up resistor ≥ 1 kW to an external voltage source.
2. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
4. Ensure that the expected operating MOSFET current will not cause the Short−Circuit Protection to turn the MOSFET off undesirably.
5. Tested by the following methods @ TA = 25°C:
ESD Human Body Model tested per JESD22−A114
ESD Machine Model tested per JESD22−A115
ESD Charged Device Model per ESD STM5.3.1
Latch−up Current tested per JESD78
6. Rating is for all pins except for VIN and VOUT which are tied to the internal MOSFET’s Drain and Source. Typical MOSFET ESD performance
for VIN and VOUT should be expected and these devices should be treated as ESD sensitive.
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NCP45560
Table 3. OPERATING RANGES
Rating
Symbol
Min
Max
Unit
Supply Voltage
VCC
3
5.5
V
Input Voltage
VIN
0.5
13.5
V
Ground
0
V
Ambient Temperature
GND
TA
−40
85
°C
Junction Temperature
TJ
−40
125
°C
ETRANS
0
210
mJ
OFF to ON Transition Energy Dissipation Limit (See application section)
Table 4. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Conditions (Note 7)
Parameter
Symbol
Min
Typ
Max
Unit
4.1
5.0
mW
4.3
5.3
MOSFET
On−Resistance
VCC = 3.3 V; VIN = 1.8 V
RON
VCC = 3.3 V; VIN = 5 V
VCC = 3.3 V; VIN = 12 V
Leakage Current (Note 8)
4.9
6.8
VEN = 0 V; VIN = 13.5 V
ILEAK
0.1
1.0
mA
VEN = 0 V; VCC = 3 V
ISTBY
0.65
2.0
mA
3.2
4.5
280
400
530
750
115
144
CONTROLLER
Supply Standby Current (Note 9)
VEN = 0 V; VCC = 5.5 V
Supply Dynamic Current (Note 10)
VEN = VCC = 3 V; VIN = 12 V
IDYN
VEN = VCC = 5.5 V; VIN = 1.8 V
Bleed Resistance
RBLEED
VEN = 0 V; VCC = 3 V
VEN = 0 V; VCC = 5.5 V
Bleed Pin Leakage Current
VEN = VCC = 3 V, VIN = 1.8 V
86
72
IBLEED
VEN = VCC = 3 V, VIN = 12 V
EN Input High Voltage
VCC = 3 V − 5.5 V
VIH
EN Input Low Voltage
VCC = 3 V − 5.5 V
VIL
EN Input Leakage Current
NCP45560−H; VEN = 0 V
IIL
NCP45560−L; VEN = VCC
IIH
97
121
6.0
10
60
70
2.0
mA
W
mA
V
0.8
V
90
500
nA
90
500
EN Pull Down Resistance
NCP45560−H
RPD
76
100
124
kW
EN Pull Up Resistance
NCP45560−L
RPU
76
100
124
kW
PG Output Low Voltage (Note 11)
VCC = 3 V; ISINK = 5 mA
VOL
0.2
V
PG Output Leakage Current (Note 12)
VCC = 3 V; VTERM = 3.3 V
IOH
5.0
100
nA
Slew Rate Control Constant (Note 13)
VCC = 3 V
KSR
33
40
mA
Thermal Shutdown Threshold (Note 14)
VCC = 3 V − 5.5 V
TSDT
Thermal Shutdown Hysteresis (Note 14)
VCC = 3 V − 5.5 V
THYS
VIN Undervoltage Lockout Threshold
VCC = 3 V
VUVLO
VIN Undervoltage Lockout Hysteresis
VCC = 3 V
VHYS
25
Short−Circuit Protection Threshold
VCC = 3 V; VIN = 0.5 V
VSC
200
100
285
500
26
FAULT PROTECTIONS
VCC = 3 V; VIN = 13.5 V
145
°C
20
0.25
0.35
°C
0.45
V
40
60
mV
265
350
mV
7. VEN shown only for NCP45560−H, (EN Active−High) unless otherwise specified.
8. Average current from VIN to VOUT with MOSFET turned off.
9. Average current from VCC to GND with MOSFET turned off.
10. Average current from VCC to GND after charge up time of MOSFET.
11. PG is an open-drain output that is pulled low when the MOSFET is disabled.
12. PG is an open-drain output that is not driven when the gate of the MOSFET is fully charged, requires an external pull up resistor ≥ 1 kW to
an external voltage source, VTERM.
13. See Applications Information section for details on how to adjust the slew rate.
14. Operation above TJ = 125°C is not guaranteed.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NCP45560
Table 5. SWITCHING CHARACTERISTICS (TJ = 25°C unless otherwise specified) (Notes 15 and 16)
Parameter
Conditions
Output Slew Rate
Symbol
SR
VCC = 3.3 V; VIN = 1.8 V
Output Turn−on Delay
Min
12.4
VCC = 5.0 V; VIN = 1.8 V
12.6
VCC = 3.3 V; VIN = 12 V
13.7
VCC = 5.0 V; VIN = 12 V
14.0
TON
VCC = 3.3 V; VIN = 1.8 V
195
VCC = 5.0 V; VIN = 1.8 V
180
VCC = 3.3 V; VIN = 12 V
280
VCC = 5.0 V; VIN = 12 V
Output Turn−off Delay
4.1
VCC = 5.0 V; VIN = 1.8 V
3.5
VCC = 3.3 V; VIN = 12 V
1.4
VCC = 5.0 V; VIN = 12 V
0.8
TPG,ON
VCC = 3.3 V; VIN = 1.8 V
Power Good Turn−off Time
1.71
VCC = 5.0 V; VIN = 1.8 V
1.08
VCC = 3.3 V; VIN = 12 V
2.15
VCC = 5.0 V; VIN = 12 V
1.35
TPG,OFF
VCC = 3.3 V; VIN = 1.8 V
28
VCC = 5.0 V; VIN = 1.8 V
21
VCC = 3.3 V; VIN = 12 V
28
VCC = 5.0 V; VIN = 12 V
21
15. See below figure for Test Circuit and Timing Diagram.
16. Tested with the following conditions: VTERM = VCC; RPG = 100 kW; RL = 10 W; CL = 0.1 mF.
OFF ON
RPG
EN
VIN
VCC
NCP45560−H
BLEED
Dt
CL
TOFF
10%
DV
SR =
TPG,ON
VPG
RL
SR
50%
90%
VOUT
VOUT
50%
TON
VTERM
PG
GND
VEN
Max
Unit
kV/s
ms
265
TOFF
VCC = 3.3 V; VIN = 1.8 V
Power Good Turn−on Time
Typ
DV
90%
Dt
TPG,OFF
50%
50%
Figure 2. Switching Characteristics Test Circuit and Timing Diagrams
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4
ms
ms
ns
NCP45560
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
7.5
5.3
5.1
4.9
4.7
4.5
4.3
4.1
3.9
0.5
2.5
4.5
6.5
8.5
10.5
5.0
VIN = 1.8 V
4.5
4.0
3.5
0
15
30
45
60
75
90 105 120
VIN, INPUT VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On−Resistance vs. Input Voltage
Figure 4. On−Resistance vs. Temperature
2.5
2.0
1.5
1.0
3.5
4.0
4.5
5.0
5.5
7
6
5
4
VCC = 5.5 V
3
2
1
VCC = 3 V
0
−45 −30 −15
0
15
30
45
60
75
90 105 120
VCC, SUPPLY VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Supply Standby Current vs. Supply
Voltage
Figure 6. Supply Standby Current vs.
Temperature
550
500
450
400
350
300
VCC = 5.5 V
250
VCC = 3 V
200
150
VIN = 5.0 V
5.5
3.0
−45 −30 −15
3.0
3.0
6.0
12.5
3.5
0.5
VIN = 12 V
VCC = 3.3 V
6.5
ISTBY, SUPPLY STANDBY CURRENT (mA)
3.7
3.5
7.0
RON, ON−RESISTANCE (mW)
VCC = 3 V
VCC = 5.5 V
IDYN, SUPPLY DYNAMIC CURRENT (mA)
IDYN, SUPPLY DYNAMIC CURRENT (mA)
ISTBY, SUPPLY STANDBY CURRENT (mA)
RON, ON−RESISTANCE (mW)
5.5
0.5
2.5
4.5
6.5
8.5
10.5
12.5
600
550
500
VIN = 1.8 V
450
400
350
300
VIN = 12 V
250
200
150
3.0
3.5
4.0
4.5
5.0
5.5
VIN, INPUT VOLTAGE (V)
VCC, SUPPLY VOLTAGE (V)
Figure 7. Supply Dynamic Current vs. Input
Voltage
Figure 8. Supply Dynamic Current vs. Supply
Voltage
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NCP45560
TYPICAL CHARACTERISTICS
115
700
600
550
500
450
400
350
300
250
200
−45
VCC = 3.0 V, VIN = 12 V
−15
15
45
75
110
105
100
95
105
3.0
3.5
4.0
4.5
5.0
5.5
TJ, JUNCTION TEMPERATURE (°C)
VCC, SUPPLY VOLTAGE (V)
Figure 9. Supply Dynamic Current vs.
Temperature
Figure 10. Bleed Resistance vs. Supply
Voltage
70
135
60
IBLEED, BLEED PIN LEAKAGE
CURRENT (mA)
145
VCC = 3 V
125
115
VCC = 5.5 V
105
95
85
−45
IBLEED, BLEED PIN LEAKAGE CURRENT (mA)
RBLEED, BLEED RESISTANCE (W)
VCC = 5.5 V, VIN = 1.8 V
650
−15
15
45
75
VCC = 3 V
50
VCC = 5.5 V
40
30
20
10
0
105
0.5
2.5
4.5
6.5
8.5
10.5
12.5
TJ, JUNCTION TEMPERATURE (°C)
VIN, INPUT VOLTAGE (V)
Figure 11. Bleed Resistance vs. Temperature
Figure 12. Bleed Pin Leakage Current vs. Input
Voltage
IPD/PU, EN PULL DOWN/UP RESISTANCE (kW)
RBLEED, BLEED RESISTANCE (W)
IDYN, SUPPLY DYNAMIC CURRENT (mA)
(TJ = 25°C unless otherwise specified)
80
70
VCC = 3 V, VIN = 12 V
60
50
40
30
20
VCC = 3 V, VIN = 1.8 V
10
0
−45
−15
15
45
75
105
120
115
110
105
100
95
90
85
−45
−15
15
45
75
105
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Bleed Pin Leakage Current vs.
Temperature
Figure 14. EN Pull Down/Up Resistance vs.
Temperature
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NCP45560
TYPICAL CHARACTERISTICS
VOL, PG OUTPUT LOW VOLTAGE (V)
0.140
ISINK = 5 mA
0.135
0.130
0.125
0.120
0.115
3.5
4.0
4.5
5.0
5.5
VCC = 3 V
0.16
0.14
VCC = 5.5 V
0.12
0.10
0.08
−45
−15
15
45
75
105
Figure 15. PG Output Low Voltage vs. Supply
Voltage
Figure 16. PG Output Low Voltage vs.
Temperature
36
VCC = 5.5 V
35
34
VCC = 3 V
33
32
31
30
29
0.5
2.5
4.5
6.5
8.5
10.5
12.5
35.5
35.0
VCC = 5.5 V
34.5
34.0
33.5
VCC = 3 V
33.0
32.5
32.0
−45
−15
15
45
75
105
VIN, INPUT VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 17. Slew Rate Control Constant vs.
Input Voltage
Figure 18. Slew Rate Control Constant vs.
Temperature
14.5
320
310
VCC = 5.5 V
300
290
VCC = 3 V
280
270
260
250
ISINK = 5 mA
0.18
TJ, JUNCTION TEMPERATURE (°C)
37
28
0.20
VCC, SUPPLY VOLTAGE (V)
SR, OUTPUT SLEW RATE (kV/s)
VSC, SHORT−CIRCUIT PROTECTION
THRESHOLD (mV)
3.0
KSR, SLEW RATE CONTROL CONSTANT (mA)
0.110
KSR, SLEW RATE CONTROL CONSTANT (mA)
VOL, PG OUTPUT LOW VOLTAGE (V)
(TJ = 25°C unless otherwise specified)
0.5
2.5
4.5
6.5
8.5
10.5
12.5
VCC = 5.5 V
14.0
13.5
VCC = 3 V
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
0.5
2.5
4.5
6.5
8.5
10.5
12.5
VIN, INPUT VOLTAGE (V)
VIN, INPUT VOLTAGE (V)
Figure 19. Short−Circuit Protection Threshold
vs. Input Voltage
Figure 20. Output Slew Rate vs. Input Voltage
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NCP45560
TYPICAL CHARACTERISTICS
VCC = 3.3 V, VIN = 12 V
13.5
13.0
12.5
VCC = 5 V, VIN = 1.8 V
12.0
TOFF, OUTPUT TURN−OFF DELAY (ms)
−20
0
20
40
60
80
100
120
310
290
VCC = 3 V
270
250
VCC = 5.5 V
230
210
190
170
150
0.5
2.5
4.5
6.5
8.5
10.5
12.5
TJ, JUNCTION TEMPERATURE (°C)
VIN, INPUT VOLTAGE (V)
Figure 21. Output Slew Rate vs. Temperature
Figure 22. Output Turn−on Delay vs. Input
Voltage
300
TOFF, OUTPUT TURN−OFF DELAY (ms)
TON, OUTPUT TURN−ON DELAY (ms)
11.5
−40
VCC = 3.3 V, VIN = 12 V
275
250
225
200
VCC = 5 V, VIN = 1.8 V
175
150
−40
−20
0
20
40
60
80
100
120
6
5
4
VCC = 3 V
3
2
VCC = 5.5 V
1
0
0.5
2.5
4.5
6.5
8.5
10.5
12.5
VIN, INPUT VOLTAGE (V)
Figure 23. Output Turn−on Delay vs.
Temperature
Figure 24. Output Turn−off Delay vs. Input
Voltage
4.5
4.0
4.0
VCC = 5 V, VIN = 1.8 V
3.5
3.0
2.5
2.0
VCC = 3.3 V, VIN = 12 V
1.5
1.0
−40
7
TJ, JUNCTION TEMPERATURE (°C)
TPG,ON, PG TURN−ON TIME (ms)
SR, OUTPUT SLEW RATE (kV/s)
14.0
TON, OUTPUT TURN−ON DELAY (ms)
(TJ = 25°C unless otherwise specified)
−20
0
20
40
60
80
100
3.5
3.0
2.5
2.0
1.5
VCC = 5.5 V
1.0
0.5
120
VCC = 3 V
0.5
2.5
4.5
6.5
8.5
10.5
12.5
TJ, JUNCTION TEMPERATURE (°C)
VIN, INPUT VOLTAGE (V)
Figure 25. Output Turn−off Delay vs.
Temperature
Figure 26. Power Good Turn−on Time vs. Input
Voltage
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NCP45560
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
TPG,OFF, PG TURN−OFF TIME (ns)
32
2.6
2.4
VCC = 3.3 V, VIN = 12 V
2.2
2.0
1.8
1.6
1.4
1.2
VCC = 5 V, VIN = 1.8 V
1.0
0.8
−40
−20
0
20
40
60
80
VIN = 13.5 V
28
26
VIN = 0.5 V
24
22
20
18
120
100
30
3.0
3.5
4.0
4.5
5.0
TJ, JUNCTION TEMPERATURE (°C)
VCC, SUPPLY VOLTAGE (V)
Figure 27. Power Good Turn−on Time vs.
Temperature
Figure 28. Power Good Turn−off Time vs.
Supply Voltage
35.0
TPG,OFF, PG TURN−OFF TIME (ns)
TPG,ON, PG TURN−ON TIME (ms)
2.8
32.5
VCC = 3.3 V, VIN = 12 V
30.0
27.5
25.0
VCC = 5 V, VIN = 1.8 V
22.5
20.0
17.5
−40 −20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 29. Power Good Turn−off Time vs.
Temperature
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120
5.5
NCP45560
APPLICATIONS INFORMATION
Enable Control
than or equal to 1 kW to an external voltage source, VTERM,
compatible with input levels of other devices connected to
this pin (as shown in Figures 30 and 31).
The power good output can be used as the enable signal for
other active−high devices in the system (as shown in
Figure 32). This allows for guaranteed by design power
sequencing and reduces the number of enable signals needed
from the system controller. If the power good feature is not
used in the application, the PG pin should be tied to GND.
The NCP45560 has two part numbers, NCP45560−H and
NCP45560−L, that only differ in the polarity of the enable
control.
The NCP45560−H device allows for enabling the
MOSFET in an active−high configuration. When the VCC
supply pin has an adequate voltage applied and the EN pin
is at a logic high level, the MOSFET will be enabled.
Similarly, when the EN pin is at a logic low level, the
MOSFET will be disabled. An internal pull down resistor to
ground on the EN pin ensures that the MOSFET will be
disabled when not being driven.
The NCP45560−L device allows for enabling the
MOSFET in an active−low configuration. When the VCC
supply pin has an adequate voltage applied and the EN pin
is at a logic low level, the MOSFET will be enabled.
Similarly, when the EN pin is at a logic high level, the
MOSFET will be disabled. An internal pull up resistor to
VCC on the EN pin ensures that the MOSFET will be
disabled when not being driven.
Slew Rate Control
The NCP45560 devices are equipped with controlled
output slew rate which provides soft start functionality. This
limits the inrush current caused by capacitor charging and
enables these devices to be used in hot swap applications.
The slew rate can be decreased with an external capacitor
added between the SR pin and ground (as shown in
Figures 30 and 31). With an external capacitor present, the
slew rate can be determined by the following equation:
Slew Rate +
Power Sequencing
K SR
[Vńs]
C SR
(eq. 1)
The NCP45560 devices will function with any power
sequence, but the output turn−on delay performance may
vary from what is specified. To achieve the specified
performance, there are two recommended power sequences:
1. VCC → VIN → VEN
2. VIN → VCC → VEN
VCC must be at 2 V or higher when EN is asserted to ensure
that the enable is latched properly for correct operation. If
EN comes up before VCC reaches 2 V, then the EN may not
take effect.
where KSR is the specified slew rate control constant, found
in Table 4, and CSR is the slew rate control capacitor added
between the SR pin and ground. The slew rate of the device
will always be the lower of the default slew rate and the
adjusted slew rate. Therefore, if the CSR is not large enough
to decrease the slew rate more than the specified default
value, the slew rate of the device will be the default value.
The SR pin can be left floating if the slew rate does not need
to be decreased.
Load Bleed (Quick Discharge)
The NCP45560 devices are equipped with short−circuit
protection that is used to help protect the part and the system
from a sudden high−current event, such as the output, VOUT,
being shorted to ground. This circuitry is only active when
the gate of the MOSFET is fully charged.
Once active, the circuitry monitors the difference in the
voltage on the VIN pin and the voltage on the BLEED pin.
In order for the VOUT voltage to be monitored through the
BLEED pin, it is required that the BLEED pin be connected
to VOUT either directly (as shown in Figure 31) or through
a resistor, REXT (as shown in Figure 30), which should not
exceed 1 kW. With the BLEED pin connected to VOUT, the
short−circuit protection is able to monitor the voltage drop
across the MOSFET.
If the voltage drop across the MOSFET is greater than or
equal to the short−circuit protection threshold voltage, the
MOSFET is immediately turned off and the load bleed is
activated. The part remains latched in this off state until EN
is toggled or VCC supply voltage is cycled, at which point the
MOSFET will be turned on in a controlled fashion with the
normal output turn−on delay and slew rate. The current
through the MOSFET that will cause a short−circuit event
Short−Circuit Protection
The NCP45560 devices have an internal bleed resistor,
RBLEED, which is used to bleed the charge off of the load to
ground after the MOSFET has been disabled. In series with
the bleed resistor is a bleed switch that is enabled whenever
the MOSFET is disabled. The MOSFET and the bleed
switch are never concurrently active.
It is required that the BLEED pin be connected to VOUT
either directly (as shown in Figure 31) or through an external
resistor, REXT (as shown in Figure 30). REXT should not
exceed 1 kW and can be used to increase the total bleed
resistance.
Care must be taken to ensure that the power dissipated
across RBLEED is kept at a safe level. The maximum
continuous power that can be dissipated across RBLEED is
0.4 W. REXT can be used to decrease the amount of power
dissipated across RBLEED.
Power Good
The NCP45560 devices have a power good output (PG)
that can be used to indicate when the gate of the MOSFET
is fully charged. The PG pin is an active−high, open−drain
output that requires an external pull up resistor, RPG, greater
www.onsemi.com
10
NCP45560
to the low RON. When the EN signal is asserted high, the load
switch transitions from an OFF state to an ON state. During
this time, the resistance from VIN to VOUT transitions from
high impedance to RON, and additional energy is dissipated
in the device for a short period of time. The worst case
energy dissipated during the OFF to ON transition can be
approximated by the following equation:
can be calculated by dividing the short−circuit protection
threshold by the expected on−resistance of the MOSFET.
Thermal Shutdown
The thermal shutdown of the NCP45560 devices protects
the part from internally or externally generated excessive
temperatures. This circuitry is disabled when EN is not
active to reduce standby current. When an over−temperature
condition is detected, the MOSFET is immediately turned
off and the load bleed is activated.
The part comes out of thermal shutdown when the
junction temperature decreases to a safe operating
temperature as dictated by the thermal hysteresis. Upon
exiting a thermal shutdown state, and if EN remains active,
the MOSFET will be turned on in a controlled fashion with
the normal output turn−on delay and slew rate.
E + 0.5 @ V IN @ ǒI INRUSH ) 0.8 @ I LOADǓ @ dt
Where VIN is the voltage on the VIN pin, IINRUSH is the
inrush current caused by capacitive loading on VOUT, and dt
is the time it takes VOUT to rise from 0 V to VIN. IINRUSH can
be calculated using the following equation:
I INRUSH + dv @ C L
dt
The undervoltage lockout of the NCP45560 devices turns
the MOSFET off and activates the load bleed when the input
voltage, VIN, is less than or equal to the undervoltage
lockout threshold. This circuitry is disabled when EN is not
active to reduce standby current.
If the VIN voltage rises above the undervoltage lockout
threshold, and EN remains active, the MOSFET will be
turned on in a controlled fashion with the normal output
turn−on delay and slew rate.
ecoSWITCH LAYOUT GUIDELINES
Electrical Layout Considerations
Correct physical PCB layout is important for proper low
noise accurate operation of all ecoSWITCH products.
Power Planes: The ecoSWITCH is optimized for extremely
low Ron resistance, however, improper PCB layout can
substantially increase source to load series resistance by
adding PCB board parasitic resistance. Solid connections to
the VIN and VOUT pins of the ecoSWITCH to copper
planes should be used to achieve low series resistance and
good thermal dissipation. The ecoSWITCH requires ample
heat dissipation for correct thermal lockout operation. The
internal FET dissipates load condition dependent amounts
of power in the milliseconds following the rising edge of
enable, and providing good thermal conduction from the
packaging to the board is critical. Direct coupling of VIN to
VOUT should be avoided, as this will adversely affect slew
rates.
Capacitive Load
The peak in−rush current associated with the initial
charging of the application load capacitance needs to stay
below the specified IMAX. CL (capacitive load) should be
less than Cmax as defined by the following equation:
I max
SR typ
(eq. 4)
Where dv/dt is the programmed slew rate, and CL is the
capacitive loading on VOUT. To prevent thermal lockout or
damage to the device, the energy dissipated during the OFF
to ON transition should be limited to ETRANS listed in
operating ranges table.
Undervoltage Lockout
C max +
(eq. 3)
(eq. 2)
Where IMAX is the maximum load current, and SRtyp is the
typical default slew rate when no external load capacitor is
added to the SR pin.
OFF to ON Transition Energy Dissipation
The energy dissipation due to load current traveling from
VIN to VOUT is very low during steady state operation due
www.onsemi.com
11
NCP45560
VTERM = 3.3 V
Power Supply
or Battery
RPG
100 kW
3.0 V − 5.5 V
0.5 V − 13.5 V
VIN
PG
EN
Thermal,
Undervoltage
&
Short−Circuit
Protection
Charge
Pump
Delay and
Slew Rate
Control
SR
CSR
VOUT
Control
Logic
GND
Bandgap
&
Biases
BLEED
VCC
Controller
REXT
Load
Figure 30. Typical Application Diagram − Load Switch
www.onsemi.com
12
NCP45560
VCC
3.0 V − 5.5 V
EN
VTERM
PG
GND
VIN
0.5 V − 13.5 V
RPG
BACKPLANE
VIN
PG
EN
Delay and
Slew Rate
Control
CSR
VOUT
Charge
Pump
SR
Control
Logic
GND
Thermal,
Undervoltage
&
Short−Circuit
Protection
Bandgap
&
Biases
BLEED
VCC
REMOVABLE
CARD
Load
Figure 31. Typical Application Diagram − Hot Swap
VTERM = 3.3 V
EN
PG
EN
PG
RPG
10 kW
Controller
RPD
100 kW PG
RPD
100 kW PG
NCP45560−H
NCP45560−H
Figure 32. Simplified Application Diagram − Power Sequencing with PG Output
ORDERING INFORMATION
Device
EN Polarity
Package
Shipping†
NCP45560IMNTWG−H
Active−High
NCP45560IMNTWG−L
Active−Low
DFN12
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ecoSWITCH is a trademark of Semiconductor Components Industries, LLC (SCILLC).
www.onsemi.com
13
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN12 3x3, 0.5P
CASE 506CD
ISSUE A
DATE 18 FEB 2014
1
SCALE 4:1
PIN ONE
INDICATOR
0.10 C
2X
2X
0.10 C
L1
ÇÇÇ
ÇÇÇ
ÇÇÇ
DETAIL A
ALTERNATE
CONSTRUCTIONS
E
MOLD CMPD
A3
DETAIL B
A1
A
0.05 C
NOTE 4
SIDE VIEW
D2
6
1
DETAIL B
A3
ALTERNATE
CONSTRUCTION
A1
SEATING
PLANE
C
0.10
DETAIL A
ÇÇÇ
ÇÇÇ
ÉÉÉ
DIM
A
A1
A3
b
D
D2
E
E2
e
L
L1
L2
K
EXPOSED Cu
TOP VIEW
0.05 C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 MM FROM TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
L
L
A B
D
M
GENERIC
MARKING DIAGRAM*
C A B
L
12X
0.10
M
XXXXX
XXXXX
ALYWG
G
C A B
L2
E2
K
7
12
e
e/2
BOTTOM VIEW
12X
b
0.10
M
C A-B B
0.05
M
C
NOTE 3
A
L
Y
W
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
RECOMMENDED
SOLDERING FOOTPRINT*
2.86
MILLIMETERS
MIN
MAX
0.80
1.00
0.00
0.05
0.20 REF
0.20
0.30
3.00 BSC
2.60
2.80
3.00 BSC
1.90
2.10
0.50 BSC
0.20
0.40
−−−
0.15
0.10 REF
0.15 MIN
11X
0.32
12X
0.48
2.10
PACKAGE
OUTLINE
3.30
1
0.50
PITCH
0.45
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON67174E
DFN12 3X3, 0.5P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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