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NCP4624DSQ33T1G

NCP4624DSQ33T1G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOT-353(SC-88A)

  • 描述:

    IC REG LINEAR 3.3V 150MA SC88A

  • 数据手册
  • 价格&库存
NCP4624DSQ33T1G 数据手册
NCP4624 150 mA, Wide Input Range, LDO Linear Voltage Regulator The NCP4624 is a CMOS 150 mA LDO linear voltage regulator which features high input voltage range while maintaining low quiescent current 2 mA typically. Several protection features like Current Limiting and Reverse Current Protection Circuit are fully integrated to create a versatile device suitable for the power source being in the standby−mode. A high maximum input voltage (11 V) and wide temperature range (−40°C to 85°C) makes the NCP4624 device with output capacitor as low as 0.1 mF an ideal choice for industrial applications also a portable equipments powered by 2−cell Li−ion battery. www.onsemi.com MARKING DIAGRAMS XXXMM SOT−23−5 CASE 1212 1 Features • Operating Input Voltage Range: 2.5 V to Set VOUT + 6.5 V, Max. • • • • • • • • 11 V Output Voltage Range: 1.2 to 5.5 V (available in 0.1 V steps) ±2% Output Voltage Accuracy Output Current: min. 150 mA Line Regulation: 0.02%/V Current Limit Circuit Available in SOT−23−5, UDFN4 1.0 x 1.0 mm and SC−88A Package Built−in Reverse Current Protection Circuit These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • • • • • Home Appliances, Industrial Equipment Cable Boxes, Satellite Receivers, Entertainment Systems Car Audio Equipment, Navigation Systems Notebook Adaptors, LCD TVs, Cordless Phones and Private LAN Systems Battery−Powered Portable Communication Equipments NCP4624x VIN VIN 0.1mF 1 UDFN4 CASE 517BR SC−88A (SC−70−5/SOT−353) CASE 419A XX, XXX, XXXX M, MM A Y W G XXXX MG G 1 = Specific Device Code = Date Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION VOUT See detailed ordering and shipping information in the package dimensions section on page 15 of this data sheet. VOUT C1 XX MM 1 C2 CE GND 0.1mF Figure 1. Typical Application Schematic © Semiconductor Components Industries, LLC, 2014 August, 2017 − Rev. 3 1 Publication Order Number: NCP4624/D NCP4624 NCP4624xxxx NCP4624Dxx Vin Vout Vin Vref Vref Current Limit CE Vout CE Current Limit Reverse Detector Reverse Detector GND GND Figure 2. Simplified Schematic Block Diagram PIN FUNCTION DESCRIPTION Pin No. SOT−23−5 SC−88A UDFN 1x1 Pin Name 1 5 4 VIN Input pin 2 3 2 GND Ground pin 3 1 3 CE Chip enable pin (“H” active) 4 2 NC Non connected 5 4 1 VOUT *EP EP Description Output pin Exposed Pad (leave floating or connect to GND) ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VIN −0.3 to 12 V Output Voltage VOUT −0.3 to VIN ≤ 11 V Chip Enable Input VCE −0.3 to VIN ≤ 11 V Power Dissipation SOT−23−5 PD 420 mW Input Voltage (Note 1) Power Dissipation uDFN 1.0 x 1.0 mm 400 Power Dissipation SC−88A 380 Junction Temperature TJ −40 to 150 °C Storage Temperature TSTG −55 to 125 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to Electrical Characteristics and Application Information for safe operating area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115) Latchup Current Maximum Rating tested per JEDEC standard: JESD78. www.onsemi.com 2 NCP4624 THERMAL CHARACTERISTICS Symbol Value Unit Thermal Characteristics, SOT−23−5 Thermal Resistance, Junction−to−Air Rating RqJA 238 °C/W Thermal Characteristics, uDFN 1x1 Thermal Resistance, Junction−to−Air RqJA 250 °C/W Thermal Characteristics, SC−88A Thermal Resistance, Junction−to−Air RqJA 263 °C/W ELECTRICAL CHARACTERISTICS −40°C ≤ TA ≤ 85°C; CIN = COUT = 0.1 mF, unless otherwise noted. Typical values are at TA = +25°C. Parameter Operating Input Voltage Test Conditions Symbol Min 1.2 V < VOUT < 4.5 V VIN 2.5 Typ 4.5 V ≤ VOUT < 5.5 V Output Voltage Output Voltage Temp. Coefficient Ta = 25°C, VOUT > 1.5 V Max Unit Vset + 6.5 V 11 VOUT x0.99 x1.01 −40°C < TA < 85°C, VOUT > 1.5V x0.982 x1.018 TA = 25°C, VOUT < 1.5 V −15 +15 −40°C < TA < 85°C, VOUT < 1.5V −28 Line Regulation Set VOUT + 0.5 V < VIN < VIN max, IOUT = 1 mA LineReg Load Regulation VIN = VOUT + 2 V, 0.1mA < IOUT ≤ 150 mA LoadReg 1.2 V ≤ VOUT < 1.3 V IOUT = 150 mA Dropout Voltage −35 VDO ppm/°C 0.02 0.20 %/V −3 35 mV V 1.68 2.59 1.3 V ≤ VOUT < 1.5 V 1.63 2.49 1.5 V ≤ VOUT < 1.8 V 1.48 2.23 1.8 V ≤ VOUT < 2.3 V 1.16 2.19 2.3 V ≤ VOUT < 3.0 V 0.90 1.47 3.0 V ≤ VOUT < 4.0 V 0.61 1.05 4.0 V ≤ VOUT ≤ 5.5 V 0.39 0.76 Output Current IOUT mV +28 ±100 VIN = VOUT + 2 V, IOUT = 100 mA, TA = −40 to 105°C V 150 mA Short Current Limit VOUT = 0 V ISC 45 Quiescent Current Iout = 0 mA IQ 2.0 3.7 mA VIN = VIN max , VCE = 0 V ISTB 0.2 0.6 mA 0.9 mA CE Input Voltage “H” VCEH 1.7 VIN V 0 Standby Current CE Pin Pull−Down Current CE Pin Threshold Voltage IPD 0.3 mA CE Input Voltage “L” VCEL Reverse Current 0 V ≤ VIN < 11 V, VOUT > 1.5 V IREV 0 0.16 mA Reverse Current Detection Offset 0 V ≤ VIN < 11 V, VOUT > 1.5 V VREV_DET 55 100 mV 0 V ≤ VIN < 11 V, VOUT > 1.5 V VREV_REL 70 120 mV PSRR 27 Reverse Current Release Offset Power Supply Rejection Ratio Output Noise Voltage Autodischarge NMOS Resistance VIN = VOUT + 2.5 V, ΔVIN_PK−PK = 0.3 V, IOUT = 50 mA, f = 1 kHz VOUT = 1.2 V 0.8 VOUT = 2.5 V 22 VOUT = 3.3 V 18 VOUT = 5.5 V 15 dB VOUT = 1.2 V, IOUT = 30 mA, f = 100 Hz to 100 kHz VNOISE 105 mVrms VIN = 7.0 V, VCE = 0.0 V (D version only) RDSON 380 W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NCP4624 TYPICAL CHARACTERISTICS 1.4 3.5 1.2 3 0.8 VIN = 2.5 V VOUT (V) VOUT (V) 2.5 7.5 V 1 4.0 V 5.5 V 0.6 2 1.5 0.4 1 0.2 0.5 VIN = 9.8 V 5.8 V 0 0 0 50 100 150 200 250 300 350 0 400 50 300 350 400 1.4 1.2 VIN = 6.5 V VOUT (V) VOUT (V) 250 Figure 4. Output Voltage vs. Output Current 3.3 V Version (TJ = 255C) 1 3 11 V 2 1 mA IOUT = 50 mA 0.8 0.6 30 mA 0.4 1 0.2 0 50 100 150 200 250 300 350 0 400 1 2 3 4 5 6 7 IOUT (mA) VIN (V) Figure 5. Output Voltage vs. Output Current 5.5 V Version (TJ = 255C) Figure 6. Output Voltage vs. Input Voltage 1.2 V Version 4 7 3.5 6 3 5 VOUT (V) 2.5 2 4 3 1 mA 1 mA 2 30 mA 1 30 mA 1 0.5 0 0 200 Figure 3. Output Voltage vs. Output Current 1.2 V Version (TJ = 255C) 4 1.5 150 IOUT (mA) 5 0 0 100 IOUT (mA) 6 VOUT (V) 4.3 V IOUT = 50 mA IOUT = 50 mA 0 1 2 3 4 5 VIN (V) 6 7 8 9 10 0 Figure 7. Output Voltage vs. Input Voltage 3.3 V Version 1 2 3 4 5 6 VIN (V) 7 8 9 10 Figure 8. Output Voltage vs. Input Voltage 5.5 V Version www.onsemi.com 4 11 NCP4624 TYPICAL CHARACTERISTICS 1.22 3.33 3.32 1.21 VOUT (V) VOUT (V) 3.31 1.2 3.3 3.29 1.19 3.28 1.18 −40 −20 0 20 40 60 3.27 −40 80 20 40 60 80 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 10. Output Voltage vs. Temperature, 3.3 V Version QUIESCENT CURRENT (mA) 2 5.5 5.49 VOUT (V) 0 Figure 9. Output Voltage vs. Temperature, 1.2 V Version 5.51 5.48 5.47 5.46 5.45 −40 1.6 1.2 0.8 0.4 0 −20 0 20 40 60 0 80 1 2 3 4 5 6 7 TJ, JUNCTION TEMPERATURE (°C) VIN (V) Figure 11. Output Voltage vs. Temperature, 5.5 V Version Figure 12. Quiescent Current vs. Input Voltage, 1.2 V Version 2.5 8 2.5 QUIESCENT CURRENT (mA) QUIESCENT CURRENT (mA) −20 2 1.5 1 0.5 0 2 1.5 1 0.5 0 0 1 2 3 4 5 6 VIN (V) 7 8 9 10 0 Figure 13. Quiescent Current vs. Input Voltage, 3.3 V Version 2 4 6 VIN (V) 8 10 Figure 14. Quiescent Current vs. Input Voltage, 5.5 V Version www.onsemi.com 5 12 NCP4624 TYPICAL CHARACTERISTICS 0.8 1.6 DROPOUT VOLTAGE (V) DROPOUT VOLTAGE (V) 2 TA = 85°C TA = −40°C 1.2 TA = 25°C 0.8 0.4 0 0.6 0.4 TA = −40°C 0.2 0 0 30 60 90 120 150 0 30 60 90 120 150 IOUT (mA) IOUT (mA) Figure 16. Dropout Voltage vs. Output Current, 3.3 V Version 6 VN, OUTPUT VOLTAGE NOISE (mVrms/√Hz) DROPOUT VOLTAGE (V) TA = 25°C Figure 15. Dropout Voltage vs. Output Current, 1.2 V Version 0.5 0.4 0.3 TA = 85°C 0.2 TA = −40°C TA = 25°C 0.1 0 0 30 60 90 IOUT (mA) 120 150 5 4 3 2 1 0 10 Figure 17. Dropout Voltage vs. Output Current, 5.5 V Version 100 1k 10k FREQUENCY (Hz) 100k 1M Figure 18. Output Voltage Noise, 1.2 V Version, VIN = 2.5 V, IOUT = 30 mA, Cin = Cout = 0.1 mF 12 14 VN, OUTPUT VOLTAGE NOISE (mVrms/√Hz) VN, OUTPUT VOLTAGE NOISE (mVrms/√Hz) TA = 85°C 10 8 6 4 2 0 10 12 10 8 6 4 2 0 100 1k 10k 100k 1M 10 100 1k 10k 100k 1M FREQUENCY (Hz) FREQUENCY (Hz) Figure 19. Output Voltage Noise, 3.3 V Version, VIN = 4.3 V, IOUT = 30 mA, Cin = Cout = 0.1 mF Figure 20. Output Voltage Noise, 5.5 V Version, VIN = 6.5 V, IOUT = 30 mA, Cin = Cout = 0.1 mF www.onsemi.com 6 NCP4624 TYPICAL CHARACTERISTICS 70 60 60 50 PSRR (dB) 1 mA 40 30 30 mA 1 mA 30 30 mA IOUT = 50 mA 10 10 IOUT = 50 mA 100 1k 10k 100k 0 1M 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure 21. PSRR vs. Frequency, 1.2 V Version Figure 22. PSRR vs. Frequency, 3.3 V Version 60 50 1 mA 40 30 30 mA 20 10 IOUT = 50 mA 0 10 100 1k 10k FREQUENCY (kHz) 100k 1M Figure 23. PSRR vs. Frequency, 5.5 V Version 4.0 3.5 3.0 2.5 1.8 VIN (V) 10 PSRR (dB) 0 40 20 20 VOUT (V) PSRR (dB) 50 1.6 1.4 1.2 1.0 0.8 0.60 0.1 0.2 0.3 0.4 0.5 0.6 t (ms) 0.7 0.8 0.9 Figure 24. Line Transients, 1.2 V Version, IOUT = 1 mA www.onsemi.com 7 1.0 1M NCP4624 TYPICAL CHARACTERISTICS 5.8 5.3 4.8 VIN (V) VOUT (V) 4.3 3.9 3.7 3.5 3.3 3.1 2.9 2.7 0 0.1 0.2 0.3 0.4 0.5 0.6 t (ms) 0.7 0.8 0.9 1.0 Figure 25. Line Transients, 3.3 V Version, IOUT = 1 mA 8.0 7.5 7.0 6.1 VIN (V) VOUT (V) 6.5 5.9 5.7 5.5 5.3 5.1 4.9 0 0.1 0.2 0.3 0.4 0.5 0.6 t (ms) 0.7 0.8 0.9 1.0 Figure 26. Line Transients, 5.5 V Version, IOUT = 1 mA 15 10 5 IOUT (mA) VOUT (V) 0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 40 80 120 160 200 240 t (ms) 280 320 360 400 Figure 27. Load Transients, 1.2 V Version, Load Step 1 mA to 10 mA, VIN = 2.5 V www.onsemi.com 8 NCP4624 TYPICAL CHARACTERISTICS 15 10 5 IOUT (mA) VOUT (V) 0 3.9 3.7 3.5 3.3 3.1 2.9 2.70 40 80 120 160 200 240 t (ms) 280 320 360 400 Figure 28. Load Transients, 3.3 V Version, Load Step 1 mA to 10 mA, VIN = 4.3 V 15 10 5 IOUT (mA) VOUT (V) 0 6.1 5.9 5.7 5.5 5.3 5.1 4.90 40 80 120 160 200 240 t (ms) 280 320 360 400 Figure 29. Load Transients, 5.5 V Version, Load Step 1 mA to 10 mA, VIN = 6.5 V 150 100 50 IOUT (mA) VOUT (V) 0 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 40 80 120 160 200 240 t (ms) 280 320 360 400 Figure 30. Load Transients, 1.2 V Version, Load Step 50 mA to 100 mA, VIN = 2.5 V www.onsemi.com 9 NCP4624 TYPICAL CHARACTERISTICS 150 100 50 0 IOUT (mA) VOUT (V) 4.5 4.1 3.7 3.3 2.9 2.5 2.1 0 40 80 120 160 200 240 280 320 360 400 t (ms) Figure 31. Load Transients, 3.3 V Version, Load Step 50 mA to 100 mA, VIN = 4.3 V 150 100 50 0 IOUT (mA) VOUT (V) 6.7 6.3 5.9 5.5 5.1 4.7 4.3 0 40 80 120 160 200 240 280 320 360 400 t (ms) Figure 32. Load Transients, 5.5 V Version, Load Step 50 mA to 100 mA, VIN = 6.5 V 4.5 Chip Enable 3.0 1.5 VCE (V) VOUT (V) 0.0 IOUT = 1 mA 1.2 0.9 IOUT = 30 mA 0.6 0.3 IOUT = 150 mA 0.0 −0.3 0 40 80 120 160 200 240 280 320 360 400 t (ms) Figure 33. Turn−on Behavior, 1.2 Version, VIN = 3 V www.onsemi.com 10 NCP4624 TYPICAL CHARACTERISTICS 6.6 Chip Enable 4.4 2.2 VCE (V) VOUT (V) 0.0 4.0 3.0 IOUT = 1 mA 2.0 IOUT = 30 mA 1.0 IOUT = 150 mA 0.0 1.0 0 40 80 120 160 200 240 280 320 360 400 t (ms) Figure 34. Turn−on Behavior, 3.3 Version, VIN = 4.3 V 9.75 Chip Enable 6.50 3.25 VCE (V) VOUT (V) 0.00 6.0 4.5 IOUT = 1 mA 3.0 IOUT = 30 mA 1.5 IOUT = 150 mA 0.0 −1.5 0 40 80 120 160 200 240 280 320 360 400 t (ms) Figure 35. Turn−on Behavior, 5.5 Version, VIN = 6.5 V 4.5 3.0 1.5 0.0 1.2 IOUT = 30 mA 0.9 0.6 IOUT = 150 mA 0.3 IOUT = 1 mA 0.0 −0.3 0 40 80 120 160 200 240 280 320 360 400 t (ms) Figure 36. Turn−off Behavior, 1.2 Version, VIN = 3 V www.onsemi.com 11 VCE (V) VOUT (V) Chip Enable NCP4624 TYPICAL CHARACTERISTICS 6.6 4.4 4.0 2.2 0.0 VCE (V) VOUT (V) Chip Enable IOUT = 30 mA 3.0 2.0 IOUT = 150 mA 1.0 IOUT = 1 mA 0.0 −1.0 0 40 80 120 160 200 240 280 320 360 400 t (ms) Figure 37. Turn−off Behavior, 3.3 Version, VIN = 4.3 V 9.75 6.50 3.25 0.00 IOUT = 30 mA 6.0 4.5 3.0 IOUT = 150 mA 1.5 IOUT = 1 mA 0.0 −1.5 0 40 80 120 160 200 240 280 320 360 400 t (ms) Figure 38. Turn−off Behavior, 5.5 Version, VIN = 6.5 V www.onsemi.com 12 VCE (V) VOUT (V) Chip Enable NCP4624 APPLICATION INFORMATION down current source which assure off state of LDO in case the CE pin will stay floating. If the enable function is not needed connect CE pin to VIN. The D version of the NCP4624 includes a transistor between VOUT and GND that is used for faster discharging of the output capacitor. This function is activated when the IC goes into disable mode. A typical application circuit for NCP4624 series is shown in the Figure 39. NCP4624x VIN VIN VOUT VOUT C1 C2 CE GND 0.1mF 0.1mF Thermal Consideration As a power across the IC increase, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and also the ambient temperature affect the rate of temperature increase for the part. When the device has good thermal conductivity through the PCB the junction temperature will be relatively low in high power dissipation applications. Figure 39. Typical Application Schematic Input Decoupling Capacitor (C1) A 100 nF ceramic input decoupling capacitor should be connected as close as possible to the input and ground pin of the NCP4624. Higher values and lower ESR improves line transient response. Reverse Current Protection Circuit Internal Reverse Current Circuitry stops the reverse current from VOUT pin to GND pin and VIN pin when VOUT goes higher than VIN voltage or VSET voltage. VSET means voltage given by voltage version. The parasitic diode of PMOS pass device is internally switched to reverse direction before VIN becomes lower than VOUT. The operation coverage of the Reverse Current Protection Circuit is VOUT > 1.5 V. In order to avoid unstable behavior a hysteresis is created by different threshold of detecting voltage VREV_DET and releasing voltage VREV_REL. See Figures 40 and 41 for details of configuration. Output Decoupling Capacitor (C2) A 100 nF ceramic output decoupling capacitor is sufficient to achieve stable operation of the IC. If tantalum capacitor is used, and its ESR is high, the loop oscillation may result. The capacitor should be connected as close as possible to the output and ground pin. Larger values and lower ESR improves dynamic parameters. Enable Operation The enable pin CE may be used for turning the regulator on and off. The IC is switched on when a high level voltage is applied to the CE pin. The enable pin has an internal pull Vin Vin Vout Vout Vref CE Vref Current Limit Current Limit CE Reverse Detector Reverse Detector GND GND Figure 40. Normal Operating Mode Figure 41. Reverse Current Protection Mode www.onsemi.com 13 NCP4624 • The conditions when the device performs stable ESR versus Output Current When using the NCP4624 devices, consider the following points: • The relation between Output Current IOUT and ESR of the output capacitor are shown below in Figures 42, 43 and 44. operation are marked as the hatched area in the charts. NCP4624xxx12xx, VIN = 2.5 V, CIN = COUT = 0.1 mF, TA = 25°C NCP4624xxx33xx, VIN = 4.3 V, CIN = COUT = 0.1 mF, TA = 25°C Figure 42. ESR vs. Load Current Figure 43. ESR vs. Load Current NCP4624xxx55xx, VIN = 6.5 V, CIN = COUT = 0.1 mF, TA = 25°C Figure 44. ESR vs. Load Current www.onsemi.com 14 NCP4624 ORDERING INFORMATION Device NCP4624DMU12TCG Marking Nominal Output Voltage Feature Package Shipping 5A 1.2 V Enable High, UDFN4 (Pb−Free) 10000 / Tape & Reel UDFN4 (Pb−Free) 10000 / Tape & Reel UDFN4 (Pb−Free) 10000 / Tape & Reel UDFN4 (Pb−Free) 10000 / Tape & Reel SOT−23−5 (Pb−Free) 3000 / Tape & Reel SOT−23−5 (Pb−Free) 3000 / Tape & Reel SOT−23−5 (Pb−Free) 3000 / Tape & Reel SOT−23−5 (Pb−Free) 3000 / Tape & Reel SC−88A (Pb−Free) 3000 / Tape & Reel SC−88A (Pb−Free) 3000 / Tape & Reel Auto discharge NCP4624DMU30TCG 5X 3.0 V NCP4624DMU33TCG 6A 3.3 V Enable High, Auto discharge Enable High, Auto discharge NCP4624DMU50TCG 6T 5.0 V Enable High, Auto discharge NCP4624DSN12T1G F12 1.2 V NCP4624DSN18T1G F18 1.8 V Enable High, Auto discharge Enable High, Auto discharge NCP4624DSN33T1G F33 3.3 V Enable High, Auto discharge NCP4624DSN50T1G F50 5.0 V NCP4624DSQ12T1G AT12 1.2. V Enable High, Auto discharge Enable High, Auto discharge NCP4624DSQ33T1G AT33 3.3 V Enable High, Auto discharge †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 15 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 5−LEAD CASE 1212−01 ISSUE A DATE 28 JAN 2011 SCALE 2:1 A 5 E 1 A2 0.05 S B D A1 4 2 L 3 L1 5X e E1 b 0.10 C M C B A S S C RECOMMENDED SOLDERING FOOTPRINT* 3.30 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DESCRIPTION: 98ASH70518A SOT−23 5−LEAD MILLIMETERS MIN MAX --1.45 0.00 0.10 1.00 1.30 0.30 0.50 0.10 0.25 2.70 3.10 2.50 3.10 1.50 1.80 0.95 BSC 0.20 --0.45 0.75 XXX MG G 0.85 0.56 DIM A A1 A2 b c D E E1 e L L1 GENERIC MARKING DIAGRAM* 5X 5X DOCUMENT NUMBER: NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSIONS: MILLIMETERS. 3. DATUM C IS THE SEATING PLANE. A *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE L SCALE 2:1 A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DATE 17 JAN 2013 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) B M M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J GENERIC MARKING DIAGRAM* C K H XXXMG G SOLDER FOOTPRINT 0.50 0.0197 XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. mm Ǔ ǒinches STYLE 1: PIN 1. BASE 2. EMITTER 3. BASE 4. COLLECTOR 5. COLLECTOR STYLE 2: PIN 1. ANODE 2. EMITTER 3. BASE 4. COLLECTOR 5. CATHODE STYLE 3: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. CATHODE 1 STYLE 4: PIN 1. SOURCE 1 2. DRAIN 1/2 3. SOURCE 1 4. GATE 1 5. GATE 2 STYLE 6: PIN 1. EMITTER 2 2. BASE 2 3. EMITTER 1 4. COLLECTOR 5. COLLECTOR 2/BASE 1 STYLE 7: PIN 1. BASE 2. EMITTER 3. BASE 4. COLLECTOR 5. COLLECTOR STYLE 8: PIN 1. CATHODE 2. COLLECTOR 3. N/C 4. BASE 5. EMITTER STYLE 9: PIN 1. ANODE 2. CATHODE 3. ANODE 4. ANODE 5. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42984B STYLE 5: PIN 1. CATHODE 2. COMMON ANODE 3. CATHODE 2 4. CATHODE 3 5. CATHODE 4 Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. SC−88A (SC−70−5/SOT−353) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN4 1.0x1.0, 0.65P CASE 517BR−01 ISSUE O 1 SCALE 4:1 PIN ONE REFERENCE 2X 0.05 C 4X A B D ÉÉ ÉÉ typ DETAIL A 0.05 C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L3 c 0.18 L2 E 3X TOP VIEW 0.43 4X (A3) 0.05 C A 3X 0.05 C NOTE 4 A1 SIDE VIEW e DETAIL A e/2 1 3X 2 DATE 27 OCT 2010 C SEATING PLANE DETAIL B 0.10 0.23 DIM A A1 A3 b D D2 E e L L2 L3 GENERIC MARKING DIAGRAM* L 1 D2 4 3 4X b 0.05 XX MM XX = Specific Device Code MM = Date Code D2 45 5 MILLIMETERS MIN MAX −−− 0.60 0.00 0.05 0.10 REF 0.20 0.30 1.00 BSC 0.43 0.53 1.00 BSC 0.65 BSC 0.20 0.30 0.27 0.37 0.02 0.12 M C A B NOTE 3 BOTTOM VIEW *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. RECOMMENDED MOUNTING FOOTPRINT* 0.65 PITCH DETAIL B 2X 0.52 PACKAGE OUTLINE 1.30 0.53 4X 0.30 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON53254E UDFN4, 1.0X1.0, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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