NCP4687DSN28T1G

NCP4687 Linear Voltage Regulator, LDO, High PSRR, 500 mA The NCP4687 is a CMOS 500 mA LDO linear voltage regulator with high output voltage accuracy which features a high ripple rejection, low supply current with low dropout and chip enable with built−in low RDS(on) NMOS transistor for fast output capacitor discharging as option. The device is composed of the voltage reference unit, error amplifier, resistor divider for output voltage sensing or precise output voltage setting. The current limit and thermal shutdown makes the device very suitable for industrial applications and portable communication equipments. Features • • • • • • • • • • Operating Input Voltage Range: 2.5 V to 5.25 V Output Voltage Range: 0.7 to 3.6 V (available in 0.1 V steps) ±0.8% Output Voltage Accuracy @ Vout > 1.8 V Output noise : 40 mVrms Line Regulation: 0.02%/V Current Limit Circuit High PSRR: 75 dB at 1 kHz, 70 dB at 10 kHz Thermal Shutdown Available in SOT−23−5, SOT−89−5 and uDFN 1.2 x 1.2 mm Packages These Devices are Pb−Free and are RoHS Compliant Typical Applications • • • • Home Appliances, Industrial Equipment DVB−T and DVB−S Receivers Car Audio Equipment, Navigation Systems Notebook Adaptors, LCD TVs, Cordless Phones and Private LAN Systems NCP4687x VIN VOUT CE SENSE GND MARKING DIAGRAMS 1 XXX XZZ SOT89−5 CASE 528AB XDFN6 CASE 711AH 1 XX MM XXXMM SOT−23−5 CASE 1212 1 XX, XXX= Specific Device Code ZZ = Lot Code MM = Date Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 15 of this data sheet. VOUT VIN C1 1.0 mF http://onsemi.com C2 1.0 mF Figure 1. Typical Application Schematic © Semiconductor Components Industries, LLC, 2014 December, 2014 − Rev. 3 1 Publication Order Number: NCP4687/D NCP4687 NCP4687xxx NCP4687Dxx Vin Vout Vin Vout SENSE SENSE Vref Vref CE CE Current Limit & Thermal Protection Current Limit & Thermal Protection GND GND Figure 2. Simplified Schematic Block Diagram PIN FUNCTION DESCRIPTION Pin No. SOT−23−5 Pin No. SOT−89−5 Pin No. DFN1212 1 4 6 VIN Input pin 2 2 3 GND Ground pin 3 3 4 CE 4 1 2 SENSE 5 5 1 VOUT 5 NC Non Connected *EP EP Exposed Pad (leave floating or connect to GND) Pin Name Description Chip enable pin (“H” active) Output Voltage Sensing Output pin http://onsemi.com 2 NCP4687 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VIN 0−6 V Output Voltage VOUT −0.3 to VIN − 0.3 V Chip Enable Input VCE −0.3 − 6 V Power Dissipation SOT−23−5 PD 420 mW Input Voltage Power Dissipation uDFN 1.2 x 1.2 mm 600 Power Dissipation SOT−89−5 900 Junction Temperature TJ −40 to 150 °C Storage Temperature TSTG −55 to 125 °C ESD Capability, Human Body Model (Note 1) ESDHBM 2000 V ESD Capability, Machine Model (Note 1) ESDMM 200 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115) Latchup Current Maximum Rating tested per JEDEC standard: JESD78 THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Characteristics, SOT−23−5 Thermal Resistance, Junction−to−Air RqJA 238 °C/W Thermal Characteristics, uDFN 1.2x1.2 Thermal Resistance, Junction−to−Air RqJA 167 °C/W Thermal Characteristics, SOT−89−5 Thermal Resistance, Junction−to−Air RqJA 111 °C/W http://onsemi.com 3 NCP4687 ELECTRICAL CHARACTERISTICS −40°C ≤ TA ≤ 85°C; CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TA = +25°C. Parameter Operating Input Voltage Test Conditions Symbol Min VOUT ≤ 1.5 V VIN Max Unit 2.5 5.25 V VOUT + 1 5.25 x0.992 x1.008 −40°C < Ta < 85°C, VOUT > 1.8 V x0.985 x1.015 V Ta = 25°C, VOUT ≤ 1.8 V −18 +18 mV −40°C < Ta < 85°C, VOUT ≤ 1.8 V −55 +55 mV VOUT > 1.5 V Output Voltage Output Voltage Temp. Coefficient Load Regulation Line Regulation Dropout Voltage Ta = 25°C, VOUT > 1.8 V −40°C < Ta < 85°C, VOUT > 1.8 V ±30 −40°C < Ta < 85°C, VOUT ≤ 1.8 V ±100 1 mA < IOUT ≤ 500 mA LoadReg 1 Set VOUT + 0.5 V < VIN < 5.25 V LineReg VDO Quiescent Current 0.02 0.1 %/V 0.58 0.88 V 0.8 V ≤ VOUT < 0.9 V 0.52 0.80 0.9 V ≤ VOUT < 1.0 V 0.45 0.70 1.0 V ≤ VOUT < 1.2 V 0.42 0.64 1.2 V ≤ VOUT < 1.4 V 0.35 0.53 1.4 V ≤ VOUT < 1.8 V 0.31 0.48 1.8 V ≤ VOUT < 2.1 V 0.27 0.41 2.1 V ≤ VOUT < 2.5 V 0.25 0.38 2.5 V ≤ VOUT < 3.0 V 0.23 0.34 3.0 V ≤ VOUT < 3.6 V 0.22 0.32 IOUT VOUT = 0 V IOUT = 0 mA VOUT > 1.5 V 500 VIN = VIN max, VCE = 0 V CE Pin Pull−Down Current CE Pin Threshold Voltage CE Input Voltage “H” 50 IQ 80 Output Noise Voltage VOUT ≤ 2.0 V @ VIN = 3.0 V, VOUT > 2.0 V @ VIN = = Set VOUT + 1.0 V, DVIN_PK−PK = 0.2 V, IOUT = 30 mA 0.1 1.0 mA IPD 0.3 0.6 mA VIN V PSRR f = 10 kHz IOUT = 30 mA , f = 10 Hz to 100 kHz, VOUT > 1.8 V 1.0 VNOISE dB 20 x VOUT mVrms 40 x VOUT Thermal Shutdown / Hysteresis VIN = 4.0 V, VCE = 0.0 V (Note 2) 0.4 75 70 IOUT = 30 mA, f = 10 Hz to 100 kHz, VOUT ≤ 1.8 V Auto−discharge N−MOS Resistance mA ISTB VCEL f = 1 kHz mA 115 75 VCEH CE Input Voltage “L” Power Supply Rejection Ratio mA ISC VOUT ≤ 1.5 V Standby Current ppm/°C mV 0.7 V ≤ VOUT < 0.8 V IOUT = 500 mA V 20 Output Current Short Current Limit VOUT Typ RDS(on) 165/65 °C 60 W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. http://onsemi.com 4 NCP4687 TYPICAL CHARACTERISTICS 3 0.7 VOUT, OUTPUT VOLTAGE (V) VOUT, OUTPUT VOLTAGE (V) 0.8 1.7 V 0.6 2.7 V 0.5 3.5 V 0.4 VIN = 1.4 V 0.3 0.2 0.1 0 100 200 300 400 500 600 700 3.5 V 1 3.0 V 0.5 0 100 200 400 500 600 700 800 IOUT, OUTPUT CURRENT (mA) Figure 3. Output Voltage vs. Output Current 0.7 V Version Figure 4. Output Voltage vs. Output Current 2.5 V Version 900 0.8 3.5 VIN = 4.1 V 3 4.6 V 2.5 2 1.5 1 0.5 0.7 0.6 0.5 0.4 1 mA 0.3 30 mA 0.2 IOUT = 50 mA 0.1 0 0 100 200 300 400 500 600 700 0 800 1 2 3 4 5 6 IOUT, OUTPUT CURRENT (mA) VIN, INPUT VOLTAGE (V) Figure 5. Output Voltage vs. Output Current 3.6 V Version Figure 6. Output Voltage vs. Input Voltage 0.7 V Version 3 VOUT, OUTPUT VOLTAGE (V) 4 2.5 2 1.5 1 1 mA 30 mA 0.5 3.5 3 2.5 2 1.5 1 mA 1 30 mA IOUT = 50 mA 0.5 IOUT = 50 mA 0 300 IOUT, OUTPUT CURRENT (mA) VOUT, OUTPUT VOLTAGE (V) VOUT, OUTPUT VOLTAGE (V) 1.5 800 4 VOUT, OUTPUT VOLTAGE (V) VIN = 4.0 V 2 0 0 0 2.5 0 1 2 3 4 VIN, INPUT VOLTAGE (V) 5 0 6 Figure 7. Output Voltage vs. Input Voltage 2.5 V Version 0 1 2 3 4 VIN, INPUT VOLTAGE (V) 5 6 Figure 8. Output Voltage vs. Input Voltage 3.6 V Version http://onsemi.com 5 NCP4687 TYPICAL CHARACTERISTICS 2.55 VOUT, OUTPUT VOLTAGE (V) VOUT, OUTPUT VOLTAGE (V) 0.72 0.71 0.7 0.69 0.68 0.67 −50 −25 0 25 50 75 2.47 −25 0 25 50 75 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Output Voltage vs. Temperature, 0.7 V Version Figure 10. Output Voltage vs. Temperature, 2.5 V Version VDO, DROPOUT VOLTAGE (V) VOUT, OUTPUT VOLTAGE (V) 2.49 100 0.7 3.61 3.6 3.59 3.58 3.57 −50 −25 0 25 50 75 0.6 25°C 0.5 85°C 0.4 0.3 −40°C 0.2 0.1 0 100 0 100 200 300 400 500 TJ, JUNCTION TEMPERATURE (°C) IOUT, OUTPUT CURRENT (mA) Figure 11. Output Voltage vs. Temperature, 3.6 V Version Figure 12. Dropout Voltage vs. Output Current, 0.7 V Version 0.3 0.25 VDO, DROPOUT VOLTAGE (V) VDO, DROPOUT VOLTAGE (V) 2.51 2.45 −50 100 3.62 0.25 25°C 0.2 85°C 0.15 0.1 −40°C 0.05 0 2.53 0 100 200 300 400 IOUT, OUTPUT CURRENT (mA) 500 Figure 13. Dropout Voltage vs. Output Current, 2.5 V Version 0.2 25°C 85°C 0.15 0.1 −40°C 0.05 0 0 100 200 300 400 IOUT, OUTPUT CURRENT (mA) 500 Figure 14. Dropout Voltage vs. Output Current, 3.6 V Version http://onsemi.com 6 NCP4687 TYPICAL CHARACTERISTICS 120 Iq, QUIESCENT CURRENT (mA) Iq, QUIESCENT CURRENT (mA) 100 80 60 40 20 0 1 2 3 4 5 60 40 20 6 0 1 2 3 4 5 VIN, INTPUT VOLTAGE (V) VIN, INTPUT VOLTAGE (V) Figure 15. Quiescent Current vs. Input Voltage, 0.7 V Version Figure 16. Quiescent Current vs. Input Voltage, 2.5 V Version 6 100 140 90 120 150 mA 50 mA 80 100 IOUT = 1 mA 70 PSRR (dB) Iq, QUIESCENT CURRENT (mA) 80 0 0 80 60 60 300 mA 50 40 40 30 20 20 10 0 0 1 2 3 4 5 100 6 1k 10k 100k VIN, INTPUT VOLTAGE (V) FREQUENCY (Hz) Figure 17. Quiescent Current vs. Input Voltage, 3.6 V Version Figure 18. PSRR vs. Frequency, 0.7 V Version 100 1M 100 90 90 150 mA 80 150 mA 80 70 300 mA 60 PSRR (dB) 70 PSRR (dB) 100 IOUT = 1 mA 50 40 30 60 300 mA 50 40 50 mA 30 50 mA 20 IOUT = 1 mA 20 10 100 10 1k 10k FREQUENCY (Hz) 100k 1M 100 Figure 19. PSRR vs. Frequency, 2.5 V Version 1k 10k FREQUENCY (Hz) 100k Figure 20. PSRR vs. Frequency, 3.6 V Version http://onsemi.com 7 1M NCP4687 TYPICAL CHARACTERISTICS 2.0 4.0 1.8 3.5 3.0 VN (mVrms/√Hz) 1.4 1.2 1.0 0.8 0.6 2.5 2.0 1.5 1.0 0.4 0.5 0.2 100 1k 10k 100k 1M 0.0 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure 21. Output Noise vs. Frequency, 0.7 V Version Figure 22. Output Noise vs. Frequency, 2.5 V Version 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10 100 1k 10k FREQUENCY (Hz) 100k 1M Figure 23. Output Noise vs. Frequency, 3.6 V Version 3.2 2.7 2.2 1.7 0.710 VIN (V) 10 VN (mVrms/√Hz) 0.0 VOUT (V) VN (mVrms/√Hz) 1.6 0.705 0.700 0.695 0.690 0.685 0.680 0 4 8 12 16 20 24 28 32 36 t (ms) Figure 24. Line Transients, 0.7 V Version http://onsemi.com 8 40 1M NCP4687 TYPICAL CHARACTERISTICS 5.0 4.5 4.0 2.510 VIN (V) VOUT (V) 3.5 2.505 2.500 2.495 2.490 2.485 2.480 0 4 8 12 16 20 24 28 32 36 40 t (ms) Figure 25. Line Transients, 2.5 V Version 6.1 5.6 5.1 VIN (V) VOUT (V) 4.6 3.610 3.605 3.600 3.595 3.590 3.585 3.580 0 4 8 12 16 20 24 28 32 36 40 t (ms) Figure 26. Line Transients, 3.6 V Version 600 400 200 0.74 IOUT (mA) VOUT (V) 0 0.72 0.70 0.68 0.66 0.64 0.62 0 10 20 30 40 50 60 70 80 90 100 t (ms) Figure 27. Load Transients, 0.7 V Version, Load Step 1 mA to 400 mA http://onsemi.com 9 NCP4687 TYPICAL CHARACTERISTICS 600 400 200 IOUT (mA) VOUT (V) 0 2.54 2.52 2.50 2.48 2.46 2.44 2.42 0 10 20 30 40 50 60 70 80 90 100 t (ms) Figure 28. Load Transients, 2.5 V Version, Load Step 1 mA to 400 mA 600 400 200 3.64 IOUT (mA) VOUT (V) 0 3.62 3.60 3.58 3.56 3.54 3.52 0 10 20 30 40 50 60 70 80 90 100 t (ms) Figure 29. Load Transients, 3.6 V Version, Load Step 1 mA to 400 mA 150 100 50 0 0.710 IOUT (mA) VOUT (V) 0.715 0.705 0.700 0.695 0.690 0.685 0.680 0 10 20 30 40 50 t (ms) 60 70 80 90 100 Figure 30. Load Transients, 0.7 V Version, Load Step 50 mA to 100 mA http://onsemi.com 10 NCP4687 TYPICAL CHARACTERISTICS 150 100 50 0 2.510 IOUT (mA) VOUT (V) 2.515 2.505 2.500 2.495 2.490 2.485 2.480 0 10 20 30 40 50 60 70 80 90 100 t (ms) Figure 31. Load Transients, 2.5 V Version, Load Step 50 mA to 100 mA 150 100 50 0 3.610 IOUT (mA) VOUT (V) 3.615 3.605 3.600 3.595 3.590 3.585 3.580 0 10 20 30 40 50 t (ms) 60 70 80 90 100 Figure 32. Load Transients, 3.6 V Version, Load Step 50 mA to 100 mA 3.75 Chip Enable 2.5 1.25 VCE (V) VOUT (V) 0 0.8 0.6 IOUT = 1 mA 0.4 IOUT = 100 mA 0.2 IOUT = 400 mA 0.0 −0.2 0 50 100 150 t (ms) 200 250 Figure 33. Turn On with CE Behavior, 0.7 V Version http://onsemi.com 11 300 NCP4687 TYPICAL CHARACTERISTICS 5.25 Chip Enable 3.5 1.75 2.0 VCE (V) VOUT (V) 0 2.5 IOUT = 1 mA 1.5 1.0 IOUT = 100 mA 0.5 IOUT = 400 mA 0.0 −0.5 0 50 100 150 t (ms) 200 250 300 Figure 34. Turn On with CE Behavior, 2.5 V Version 6 4 Chip Enable 2 VCE (V) VOUT (V) 0 4.0 3.0 IOUT = 1 mA IOUT = 100 mA 2.0 1.0 IOUT = 400 mA 0.0 −1.0 0 50 100 150 t (ms) 200 250 300 Figure 35. Turn On with CE Behavior, 3.6 V Version 3.75 2.5 1.25 0 VCE (V) VOUT (V) Chip Enable 0.8 IOUT = 1 mA 0.6 0.4 IOUT = 100 mA 0.2 0.0 −0.2 IOUT = 500 mA 0.0 0.1 0.2 0.3 0.4 0.5 0.6 t (ms) 0.7 0.8 0.9 Figure 36. Turn Off with CE Behavior, 0.7 V Version http://onsemi.com 12 1.0 NCP4687 TYPICAL CHARACTERISTICS 5.25 3.5 1.75 0 2.5 2.0 VCE (V) VOUT (V) Chip Enable IOUT = 1 mA 1.5 IOUT = 100 mA 1.0 0.5 0.0 −0.5 IOUT = 500 mA 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t (ms) Figure 37. Turn Off with CE Behavior, 2.5 V Version 6.9 4.6 2.3 4 0.0 VCE (V) VOUT (V) Chip Enable IOUT = 1 mA 3 2 IOUT = 100 mA 1 0 −1 IOUT = 500 mA 0.0 0.1 0.2 0.3 0.4 0.5 0.6 t (ms) 0.7 0.8 0.9 Figure 38. Turn Off with CE Behavior, 3.6 V Version http://onsemi.com 13 1.0 NCP4687 APPLICATION INFORMATION down current source which assure off state of LDO in case the CE pin will stay floating. If the enable function is not needed connect CE pin to VIN. The D version of the NCP4687 device includes a transistor between VOUT and GND that is used for faster discharging of the output capacitor. This function is activated when the IC goes into disable mode. A typical application circuit for NCP4687 series is shown in the Figure 39. NCP4687x VOUT VIN VOUT VIN SENSE CE C1 1.0 mF GND C2 1.0 mF Thermal Consideration As a power across the IC increase, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and also the ambient temperature affect the rate of temperature increase for the part. When the device has good thermal conductivity through the PCB the junction temperature will be relatively low in high power dissipation applications. The IC includes internal thermal shutdown circuit that stops operation of regulator, if junction temperature is higher than 165°C. After that, when junction temperature decreases below 100°C, the operation of voltage regulator would restart. While high power dissipation condition is, the regulator starts and stops repeatedly and protects itself against overheating. Figure 39. Typical Application Schematic Input Decoupling Capacitor (C1) A 1.0 mF ceramic input decoupling capacitor should be connected as close as possible to the input and ground pin of the NCP4687 device. Higher values and lower ESR improves line transient response. Output Decoupling Capacitor (C2) A 1.0 mF ceramic output decoupling capacitor is sufficient to achieve stable operation of the device. If tantalum capacitor is used, and its ESR is high, the loop oscillation may result. The capacitor should be connected as close as possible to the output and ground pin. Larger values and lower ESR improves dynamic parameters. Sense Pin The SENSE pin improves significantly the load regulation. The connection resistance between the LDO and the load given by PCB parameters has reduced impact to load regulation. If possible, use wide PCB traces as short as possible. Enable Operation The enable pin CE may be used for turning the regulator on and off. The IC is switched on when a high level voltage is applied to the CE pin. The enable pin has an internal pull http://onsemi.com 14 NCP4687 ORDERING INFORMATION Marking Nominal Output Voltage Feature Package Shipping† NCP4687DH12T1G A12D 1.2 V Auto discharge SOT−89 (Pb−Free) 1000 / Tape & Reel NCP4687DH15T1G A15D 1.5 V Auto discharge SOT−89 (Pb−Free) 1000 / Tape & Reel NCP4687DH18T1G A18D 1.8 V Auto discharge SOT−89 (Pb−Free) 1000 / Tape & Reel NCP4687DH25T1G A25D 2.5 V Auto discharge SOT−89 (Pb−Free) 1000 / Tape & Reel NCP4687DH33T1G A33D 3.3 V Auto discharge SOT−89 (Pb−Free) 1000 / Tape & Reel NCP4687DMX18TCG 9P 1.8 V Auto discharge XDFN6 (Pb−Free) 5000 / Tape & Reel NCP4687DMX25TCG 9X 2.5 V Auto discharge XDFN6 (Pb−Free) 5000 / Tape & Reel NCP4687DMX33TCG 0G 3.3 V Auto discharge XDFN6 (Pb−Free) 5000 / Tape & Reel NCP4687DSN18T1G J18 1.8 V Auto discharge SOT−23 (Pb−Free) 3000 / Tape & Reel NCP4687DSN25T1G J25 2.5 V Auto discharge SOT−23 (Pb−Free) 3000 / Tape & Reel NCP4687DSN28T1G J28 2.8 V Auto discharge SOT−23 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 15 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 5−LEAD CASE 1212−01 ISSUE A DATE 28 JAN 2011 SCALE 2:1 A 5 E 1 A2 0.05 S B D A1 4 2 L 3 L1 5X e E1 b 0.10 C M C B A S S C RECOMMENDED SOLDERING FOOTPRINT* 3.30 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DESCRIPTION: 98ASH70518A SOT−23 5−LEAD MILLIMETERS MIN MAX --1.45 0.00 0.10 1.00 1.30 0.30 0.50 0.10 0.25 2.70 3.10 2.50 3.10 1.50 1.80 0.95 BSC 0.20 --0.45 0.75 XXX MG G 0.85 0.56 DIM A A1 A2 b c D E E1 e L L1 GENERIC MARKING DIAGRAM* 5X 5X DOCUMENT NUMBER: NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSIONS: MILLIMETERS. 3. DATUM C IS THE SEATING PLANE. A *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−89, 5 LEAD CASE 528AB−01 ISSUE O DATE 23 NOV 2009 SCALE 2:1 D E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS INCLUDES LEAD FINISH. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 5. DIMENSIONS L, L2, L3, L4, L5, AND H ARE MEASURED AT DATUM PLANE C. H DIM A b b1 c D D2 E e H L L2 L3 L4 L5 1 TOP VIEW c A 0.10 C C SIDE VIEW e b1 L GENERIC MARKING DIAGRAM* e b MILLIMETERS MIN MAX 1.40 1.60 0.32 0.52 0.37 0.57 0.30 0.50 4.40 4.60 1.40 1.80 2.40 2.60 1.40 1.60 4.25 4.45 1.10 1.50 0.80 1.20 0.95 1.35 0.65 1.05 0.20 0.60 L2 1 1 2 3 XXX XMM L5 5 L3 4 D2 L4 RECOMMENDED MOUNTING FOOTPRINT* BOTTOM VIEW 4X 0.57 1.75 2.79 XXXX MM G = Specific Device Code = Lot Number = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. 1.50 0.45 4.65 1.30 1 1.65 2X 2X 1.50 0.62 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON47037E SOT−89, 5 LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS XDFN6 1.20x1.20, 0.40P CASE 711AH ISSUE O DATE 14 SEP 2011 SCALE 4:1 PIN ONE REFERENCE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25mm FROM TERMINAL TIPS. 4. COPLANARITY APPLIES TO ALL OF THE TERMINALS. A B D ÍÍÍ ÍÍÍ ÍÍÍ E DIM A A1 b D D2 E E2 e L L1 0.05 C 2X 2X 0.05 C TOP VIEW A 0.05 C 0.05 C A1 SIDE VIEW NOTE 4 C GENERIC MARKING DIAGRAM* SEATING PLANE XX MM D2 1 3 XX = Specific Device Code MM = Date Code E2 6X MILLIMETERS MIN MAX --0.40 0.00 0.05 0.13 0.23 1.20 BSC 0.89 0.99 1.20 BSC 0.25 0.35 0.40 BSC 0.15 0.25 0.05 BSC *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. L 6 4 6X e b 0.05 BOTTOM VIEW M C A B NOTE 3 RECOMMENDED MOUNTING FOOTPRINT* 1.00 PACKAGE OUTLINE 6X 0.40 1.40 0.36 0.40 PITCH 6X 0.24 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON59261E XDFN6, 1.20 X 1.20, 0.40P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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