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NCP508MT18TBGEVB

NCP508MT18TBGEVB

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    -

  • 描述:

    BOARD EVAL NCP508 1.8V WDFN

  • 数据手册
  • 价格&库存
NCP508MT18TBGEVB 数据手册
NCP508 Very Low Noise, Fast Turn On, 50 mA Low Dropout Voltage Regulator Very Low Noise at 39 mVrms without a Bypass Capacitor High Ripple Rejection of 70 dB at 1 kHz Low Dropout Voltage of 140 mV (typ) at 30 mA Tight Load Regulation, typically 6 mV for DIout = 50 mA Fast Enable Turn−On time of 20 msec Logic Level Enable ESR can vary from a few mW to 3 W These are Pb−Free Devices C1 1m ON 5 3 5 SC70−5/SC−88A/SOT−353 SQ SUFFIX CASE 419A xxx MG G 1 1 X MG G PIN CONNECTIONS Vout C2 1m 2 3 X = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) • RF Subsystems in Handsets • Noise Sensitive Circuits; VCOs, PLL 1 12 MARKING DIAGRAM WDFN6 MN SUFFIX CASE 511BJ Typical Applications Battery or Unregulated Voltage 4 5 XXX = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. Features • • • • • • • • http://onsemi.com M The NCP508 is a 50 mA low noise voltage regulator, designed to exhibit fast turn on time and high ripple rejection. Each device contains a voltage reference unit, an error amplifier, a PMOS power transistor, resistors for setting output voltage, current limit, and temperature limit protection circuits. The NCP508 has been designed for use with ceramic capacitors. The device is housed in SC−88A and WDFN6 1.5x1.5 packages. Standard voltage versions are 1.5, 1.8, 2.5, 2.8, 3.0, and 3.3. Other voltages are available in 100 mV steps. Vin 1 GND 2 Enable 3 5 Vout 4 NC 4 OFF SC−88A (Top View) Figure 1. Typical Application Diagram Vout 1 6 Vin NC 2 5 NC GND 3 4 Enable WDFN6 (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 13 of this data sheet. © Semiconductor Components Industries, LLC, 2011 January, 2011 − Rev. 5 1 Publication Order Number: NCP508/D NCP508 PIN FUNCTION DESCRIPTION Pin No. Pin Name 1 Vin Description 2 GND 3 Enable 4 N/C Not connected pin 5 Vout Regulated output voltage Positive power supply input voltage Power supply ground This input is used to place the device into low−power stand by. When this input is pulled low, the device is disabled. If this function is not used, Enable should be connected to Vin. MAXIMUM RATING Rating Symbol Value Unit Input Voltage Vin(max) 13.0 V Enable Voltage Enable −0.3 to Vin(max) + 0.3 V Output Voltage Vout −0.3 to Vin(max) + 0.3 V Power Dissipation and Thermal Characteristics (SC−88A) Power Dissipation Thermal Resistance, Junction−to−Ambient (Note 4) PD RqJA Internally Limited 200 W °C/W Power Dissipation and Thermal Characteristics (WDFN6) Power Dissipation Thermal Resistance, Junction−to−Ambient (Note 4) PD RqJA Internally Limited 313 W °C/W Maximum Junction Temperature TJ +125 °C Operating Ambient Temperature TA −40 to +85 °C Tstg −55 to +150 °C Tsolder 10 sec Storage Temperature Lead Soldering Temperature @ 260°C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL−STD−883, Method 3015. Machine Model Method 200 V 2. Latch up Capability (85°C) $ 100 mA DC with trigger voltage 3. Maximum package power dissipation limits must be observed. PD + T J(max) * T A R qJA 4. RqJA on a 30 x 30 mm PCB Cu thickness 1 oz; TA = 25°C. RECOMMENDED OPERATING CONDITIONS Rating Maximum Operating Input Voltage http://onsemi.com 2 Symbol Max Unit Vin 7.0 V NCP508 ELECTRICAL CHARACTERISTICS (Vin = Vout(nom) + 1.0 V, Venable = Vin, Cin = 1.0 mF, Cout = 1.0 mF, TJ = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Output Voltage Tolerance (TA = 25°C, Iout = 10 mA) Vout −2 − +2 % Output Voltage Tolerance (TA = −40°C to 85°C, Iout = 10 mA) Vout −3 − +3 % Regline − 2 20 mV Line Regulation (Vin = Vout + 1 V to 12 V, Iout = 10 mA) (Note 5) Load Regulation (Iout = 1.0 mA to 50 mA) (Note 5) Regload − 6 40 mV Output Current (Vout = Vout(nom) – 0.1 V) Iout(nom) 50 − − mA Dropout Voltage (Vout = 3.0 V, Measured at Vout – 100 mV) Iout = 30 mA Iout = 40 mA Iout = 50 mA Vin−Vout − − − 140 155 180 250 300 − − 0.1 1 − − − − 145 160 300 1100 200 260 500 1900 0.9 − − − − 0.15 Quiescent Current (Enable Input = 0V) IQ Ground Current (Enable Input = Vin, Vin = Vout + 1 V, Iout = 0 mA) (Enable Input = Vin, Iout = 1 mA) (Enable Input = Vin, Iout = 10 mA) (Enable Input = Vin, Iout = 50 mA) IGND mV mA mA Enable Input Threshold Voltage (Voltage Increasing, Output Turns On, Logic High) (Voltage Decreasing, Output Turns Off, Logic Low) Vth(en) Enable Input Current (Venable = 2.4 V) Ienable − 8.0 15 mA − − 20 − ms Iout(max) 100 250 − mA Ripple Rejection (Vin = Vout(nom) + 1 Vdc + 0.5 Vpp, f = 1 kHz, Io = 10 mA) RR − 70 − dB Output Noise Voltage (f = 100 Hz to 100 kHz) (Vout = 1.5 V) Vn − 39 − mVrms Output Turn On Time (Note 6) Output Short Circuit Current Limit (Vout = 0 V) V 5. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 6. Turn on time is defined from Enable at 10% to Vout at 95% nominal value. Min and max values TA = −40°C to 85°C, Tjmax = 125°C. Venable = 0 V to Vin. Cout = 1.0 mF. http://onsemi.com 3 NCP508 TYPICAL CHARACTERISTICS 300 Vin−Vout, DROPOUT VOLTAGE (mV) Vin−Vout, DROPOUT VOLTAGE (mV) 300 Vout = Vout(nom) − 0.1 V Iload = 40 mA 250 200 150 100 50 0 −40 −20 0 20 40 60 80 100 −20 0 20 40 60 80 100 120 TEMPERATURE (°C) 3.32 Vout = Vout(nom) + 1 V Iload = 1 mA Vout, OUTPUT VOLTAGE (V) Vout, OUTPUT VOLTAGE (V) 50 Figure 3. Dropout Voltage vs. Temperature, 3.3 V 1.502 1.5 1.498 1.496 1.494 1.492 −20 0 20 40 60 80 100 3.315 Vout = Vout(nom) + 1 V Iload = 1 mA 3.31 3.305 3.3 3.295 3.29 120 −40 −20 0 20 40 60 80 100 TEMPERATURE (°C) TEMPERATURE (°C) Figure 4. Output Voltage vs. Temperature, 1.5 V Figure 5. Output Voltage vs. Temperature, 3.3 V 120 250 230 Vout = Vout(nom) − 0.1 V 220 Vout = Vout(nom) − 0.1 V Iout, OUTPUT CURRENT (mA) Iout, OUTPUT CURRENT (mA) 100 TEMPERATURE (°C) 1.504 210 200 190 180 170 160 150 −40 150 Figure 2. Dropout Voltage vs. Temperature, 1.5 V 1.506 1.49 −40 200 0 −40 120 Vout = Vout(nom) − 0.1 V Iload = 40 mA 250 −20 0 20 40 60 80 100 120 200 150 100 50 0 −40 −20 0 20 40 60 80 100 TEMPERATURE (°C) TEMPERATURE (°C) Figure 6. Output Current Limit vs. Temperature, 1.5 V Figure 7. Output Current Limit vs. Temperature, 3.3 V http://onsemi.com 4 120 NCP508 TYPICAL CHARACTERISTICS 400 Vout = 0 V 310 Iout(max), SHORT−CIRCUIT CURRENT (mA) Iout(max), SHORT−CIRCUIT CURRENT (mA) 330 290 270 250 230 210 190 170 150 −40 −20 0 20 40 60 80 100 250 200 150 100 50 −20 0 20 40 60 80 100 TEMPERATURE (°C) TEMPERATURE (°C) Figure 8. Short−Circuit Current Limit vs. Temperature, 1.5 V Figure 9. Short−Circuit Current Limit vs. Temperature, 3.3 V 120 450 VEN = 0 V IQ, QUIESCENT CURRENT (nA) IQ, QUIESCENT CURRENT (nA) 300 0 −40 120 300 250 200 150 100 50 0 −40 −20 0 20 40 60 80 100 VEN = 0 V 400 350 300 250 200 150 100 50 0 −40 120 −20 0 20 40 60 80 100 120 TEMPERATURE (°C) TEMPERATURE (°C) Figure 10. Quiescent Current vs. Temperature, 1.5 V Figure 11. Quiescent Current vs. Temperature, 3.3 V 145 146 Vin = Vout + 1 V Iout = 0 mA 140 IGND, GROUND CURRENT (mA) IGND, GROUND CURRENT (mA) Vout = 0 V 350 135 130 125 120 −40 −20 0 20 40 60 80 100 120 Vin = Vout + 1 V Iout = 0 mA 144 142 140 138 136 134 132 130 128 −40 −20 0 20 40 60 80 100 120 TEMPERATURE (°C) TEMPERATURE (°C) Figure 12. Ground Current vs. Temperature, 1.5 V Figure 13. Ground Current vs. Temperature, 3.3 V http://onsemi.com 5 NCP508 TYPICAL CHARACTERISTICS 400 500 350 2V8, No Load 300 3V3, No Load Ishort, (mA) 200 150 100 1V5, No Load 50 0 0 1 2 3 4 5 6 VEN = Vin Vout = 0 mA 450 Voltage Option = 1.5 V Cin = Cout = 1 mF TA = 25°C 400 350 300 7 8 9 250 10 11 12 13 2 3 4 5 6 7 8 9 10 11 12 Vin, INPUT VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 14. Quiescent Current vs. Input Voltage Figure 15. Output Short−Circuit Current vs. Input Voltage 240 DROPOUT VOLTAGE (mV) Iin, (mA) 250 VEN = Vin Iout = 0 mA Cin = Cout = 1 mF TA = 25°C Cin = Cout = 1 mF TA = 25°C 220 200 180 160 140 2V8 120 3V 100 80 1V8 3V3 1V5 2V5 60 40 20 0 0 0.01 0.02 0.03 Iout, OUTPUT CURRENT (A) 0.04 Figure 16. Dropout Voltage vs. Output Current http://onsemi.com 6 0.05 13 NCP508 1.6 3.6 1.4 3.2 1.2 Vout, OUTPUT VOLTAGE (V) Vout, OUTPUT VOLTAGE (V) TYPICAL CHARACTERISTICS Iout = 1.0 mA to 50 mA 1 0.8 0.6 VEN = Vin Vout = 1.5 V Cin = Cout = 1 mF TA = 25°C 0.4 0.2 0 0 2 4 6 8 10 Vin, INPUT VOLTAGE (V) 2.8 2 1.6 1.2 VEN = Vin Vout = 3.3 V Cin = Cout = 1 mF TA = 25°C 0.8 0.4 0 12 Iout = 1.0 mA to 50 mA 2.4 0 2 1.4 3.2 Vout, OUTPUT VOLTAGE (V) 3.6 1.2 Vin = 2.5 V 1 0.8 0.6 VEN = Vin Vout = 1.5 V 0.2 Cin = Cout = 1 mF TA = 25°C 0 0 0.05 0.1 0.4 0.15 0.2 0.25 Vin = 4.3 V 2.8 2.4 2 1.6 1.2 VEN = Vin Vout = 3.3 V Cin = Cout = 1 mF TA = 25°C 0.8 0.4 0 0.3 0 Iout, OUTPUT CURRENT (A) 0.05 0.1 14 12 Region of Instability 8 Region of Stability 4 Cin = Cout = 1 mF TA = 25°C 2 0 0 5 10 15 0.2 0.25 Figure 20. Output Voltage vs. Output Current 16 6 0.15 Iout, OUTPUT CURRENT (A) Figure 19. Output Voltage vs. Output Current 10 12 Figure 18. Output Voltage vs. Input Voltage 1.6 ESR, EQUIVALENT SERIES RESISTANCE (W) Vout, OUTPUT VOLTAGE (V) Figure 17. Output Voltage vs. Input Voltage 4 6 8 10 Vin, INPUT VOLTAGE (V) 20 25 30 35 40 45 Iout, OUTPUT CURRENT (mA) Figure 21. Equivalent Series Resistance vs. Output Current, X7R, MLCC Capacitor http://onsemi.com 7 50 0.3 NCP508 TYPICAL CHARACTERISTICS Input Voltage (V) 3.5 2.5 Vout = 1.5 V Vin = 2.5 V to 3.5 V /rate 1 V/ms Iload = 40 mA Cout = 1 mF MLCC Load Current (mA) 20 mV 10 mV 60 mV 30 mV Vout = 1.5 V Vin = 2.5 V Iload = 1 to 50 mA Cout = 1 uF MLCC Output Voltage Deviation (mV) 0 0 −10 mV −30 mV −20 mV −60 mV Output Voltage Deviation (mV) −30 mV Figure 22. Line Transient Response 1.5 V/40 mA Figure 23. Load Transient Response 1.5 V Input voltage (V) 3.5 2.5 20 mV 10 mV Vout = 1.5 V Vin = 2.5 V to 3.5 V /rate 1 V/ms Iload = 50 mA Cout = 4.7 mF MLCC Output Voltage Deviation (mV) 0 −10 mV −20 mV Figure 24. Line Transient Response 1.5 V/50 mA http://onsemi.com 8 NCP508 TYPICAL CHARACTERISTICS Load Current (mA) Vout = 3.3 V Vin = 4.3 V Iload = 1 to 40 mA Cout = 1 mF MLCC Input Voltage (V) 5.3 Vout = 3.3 V Vin = 4.3 V to 5.3 V /rate 1 V/ms Iload = 40 mA Cout = 1 mF MLCC 4.3 20 mV 10 mV 0 Output Voltage Deviation (mV) 40 mV −10 mV 20 mV −20 mV 0 Output Voltage Deviation (mV) −20 mV −30 mV −40 mV Figure 25. Load Transient Response 3.3 V Figure 26. Line Transient Response 3.3 V/40 mA Input Voltage (V) 5.3 4.3 Vout = 3.3 V Vin = 4.3 V to 5.3 V /rate 1 V/ms Iload = 50 mA Cout = 4.7 mF MLCC 20 mV Output Voltage Deviation (mV) 10 mV 0 −10 mV −20 mV Figure 27. Line Transient Response 3.3 V/50 mA http://onsemi.com 9 NCP508 TYPICAL CHARACTERISTICS 3.0E−07 2.5E−07 (nV/√HZ) 2.0E−07 1.5E−07 1.0E−07 RMS Noise Value (100 Hz − 100 kHz) = 39 mV 0.5E−07 0.0 10 100 1000 10000 100000 1000000 FREQUENCY (Hz) Figure 28. Output Voltage Noise Vout = 1.5 V, Iout = 40 mA RR, RIPPLE REJECTION (dB) 90 80 70 60 50 1.5 V 2.5 V 3.3 V 40 30 20 10 0 10 100 1000 10000 100000 1000000 fripple, RIPPLE FREQUENCY (Hz) Figure 29. Ripple Rejection vs. Frequency Iout = 40 mA, 0.5 Vpp Iout = No Load Cin = Cout = 1 mF Vin = VEN = 2.8 V Vout = 1.8 V TA = 25°C Iout = 50 mA Cin = Cout = 1 mF Vin = VEN = 2.8 V Vout = 1.8 V TA = 25°C Vin = VEN Vout Vin = VEN Vout Iin Iin Figure 30. Startup, No Load Figure 31. Startup, Iout = 50 mA http://onsemi.com 10 NCP508 0.06 Iout, OUTPUT CURRENT (A) Cin = Cout = 1 mF Vin = VEN = 2.8 V Vout = 2.5 V TA = 25°C Ilimit = 180 mA 50 mA/div 0.05 0.04 0.03 0.02 VEN = Vin Cin = Cout = 1 mF TA = 85°C 0.01 500 ms/div 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 Vin, INPUT VOLTAGE (V) Figure 33. Measured Power Operating Area, 1.5 V, TA = 855C, Vout_drop = max 0.1 V Figure 32. Hard Short−Circuit Current (by Copper Wires) 350 0.25 0.2 PD qJA (°C/W) 250 200 qJA 150 0.15 0.1 100 0.05 50 33 x 26 mm 0 PCB Copper Thickness = 1.0 oz 0 100 200 300 400 500 600 700 800 900 1000 0 COPPER HEAT SPREADER AREA (mm2) Figure 34. Evaluation Board Figure 35. SC70−5 Thermal Resistance vs. Copper Heat Spreader Area 400 350 qJA (°C/W) 300 250 200 150 100 50 PCB Copper Thickness = 1.0 oz 0 100 200 300 400 500 600 700 800 900 PCB COPPER HEAT SPREADER AREA (mm2) Figure 36. WDFN6 Thermal Resistance vs. Copper Heat Spreader Area http://onsemi.com 11 MAX POWER DISSIPATION (W) 300 NCP508 DEFINITIONS Load Regulation Line Regulation The change in output voltage for a change in output current at a constant temperature. The change in output voltage for a change in input voltage. The measurement is made under conditions of low dissipation or by using pulse technique such that the average chip temperature is not significantly affected. Dropout Voltage The input/output differential at which the regulator output no longer maintains regulation against further reductions in input voltage. Measured when the output drops 100 mV below its nominal. The junction temperature, load current, and minimum input supply requirements affect the dropout level. Line Transient Response Typical over and undershoot response when input voltage is excited with a given slope. Thermal Protection Internal thermal shutdown circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. When activated at typically 125°C, the regulator turns off. This feature is provided to prevent failures from accidental overheating. Maximum Power Dissipation The maximum total dissipation for which the regulator will operate within its specifications. Quiescent Current The quiescent current is the current which flows through the ground when the LDO operates without a load on its output: internal IC operation, bias, etc. When the LDO becomes loaded, this term is called the Ground current. It is actually the difference between the input current (measured through the LDO input pin) and the output current. Maximum Package Power Dissipation The maximum power package dissipation is the power dissipation level at which the junction temperature reaches its maximum operating value, i.e. 150°C. Depending on the ambient power dissipation and thus the maximum available output current. APPLICATIONS INFORMATION Hints Typical application circuit for the NCP508 series is shown in Figure 1. Please be sure the Vin and GND lines are sufficiently wide. When the impedance of these lines is high, there is a chance to pick up noise or cause the regulator to malfunction. Set external components, especially the output capacitor, as close as possible to the circuit, and make leads as short as possible. Input Decoupling (C1) An input capacitor of at least 1.0 mF,(ceramic or tantalum) is recommended to improve the transient response of the regulator and/or if the regulator is located more than a few inches from the power source. It will also reduce the circuit’s sensitivity to the input line impedance at high frequencies. The capacitor should be mounted with the shortest possible track length directly across the regular’s input terminals. Higher values and lower ESR will improve the overall line transient response. Thermal Considerations Internal thermal limiting circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material and also the ambient temperature effect the rate of temperature rise for the part. This is stating that when the NCP508 has good thermal conductivity through the PCB, the junction temperature will be relatively low with high power dissipation applications. The maximum dissipation the package can handle is given by: Output Decoupling (C2) The NCP508 is a stable regulator and does not require a minimum output current. Capacitors exhibiting ESRs ranging from a few mW up to 3 W can safely be used. The minimum decoupling value is 1.0 mF and can be augmented to fulfill stringent load transient requirements. The regulator accepts ceramic chip capacitors as well as tantalum devices. Larger values improve noise rejection and load regulation transient response. PD + Enable Operation The enable pin will turn on or off the regulator. The limits of threshold are covered in the electrical specification section of this datasheet. If the enable is not used then the pin should be connected to Vin. T J(max) * T A R qJA (eq. 1) where: − TJ{max) is the maximum allowable junction temperature of the die, which is 150°C − TA is the ambient operating temperature − Rqja is dependent on the surrounding PCB layout http://onsemi.com 12 NCP508 ORDERING INFORMATION Nominal Output Voltage Marking Package Shipping† NCP508SQ15T1G 1.5 D5A SC−88A (Pb−Free) 3000 / Tape & Reel NCP508SQ18T1G 1.8 D5C SC−88A (Pb−Free) 3000 / Tape & Reel NCP508SQ25T1G 2.5 D5D SC−88A (Pb−Free) 3000 / Tape & Reel NCP508SQ28T1G 2.8 D5E SC−88A (Pb−Free) 3000 / Tape & Reel NCP508SQ30T1G 3.0 D5F SC−88A (Pb−Free) 3000 / Tape & Reel NCP508SQ33T1G 3.3 D5G SC−88A (Pb−Free) 3000 / Tape & Reel NCP508MT15TBG 1.5 B WDFN6 (Pb−Free) 3000 / Tape & Reel NCP508MT18TBG 1.8 A WDFN6 (Pb−Free) 3000 / Tape & Reel NCP508MT25TBG 2.5 C WDFN6 (Pb−Free) 3000 / Tape & Reel NCP508MT28TBG 2.8 D WDFN6 (Pb−Free) 3000 / Tape & Reel NCP508MT30TBG 3.0 E WDFN6 (Pb−Free) 3000 / Tape & Reel NCP508MT33TBG 3.3 F WDFN6 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NOTE: Additional voltages in 100 mV steps are available upon request by contacting your ON Semiconductor representative. http://onsemi.com 13 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE L SCALE 2:1 A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DATE 17 JAN 2013 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) B M M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J GENERIC MARKING DIAGRAM* C K H XXXMG G SOLDER FOOTPRINT 0.50 0.0197 XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. mm Ǔ ǒinches STYLE 1: PIN 1. BASE 2. EMITTER 3. BASE 4. COLLECTOR 5. COLLECTOR STYLE 2: PIN 1. ANODE 2. EMITTER 3. BASE 4. COLLECTOR 5. CATHODE STYLE 3: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. CATHODE 1 STYLE 4: PIN 1. SOURCE 1 2. DRAIN 1/2 3. SOURCE 1 4. GATE 1 5. GATE 2 STYLE 6: PIN 1. EMITTER 2 2. BASE 2 3. EMITTER 1 4. COLLECTOR 5. COLLECTOR 2/BASE 1 STYLE 7: PIN 1. BASE 2. EMITTER 3. BASE 4. COLLECTOR 5. COLLECTOR STYLE 8: PIN 1. CATHODE 2. COLLECTOR 3. N/C 4. BASE 5. EMITTER STYLE 9: PIN 1. ANODE 2. CATHODE 3. ANODE 4. ANODE 5. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42984B STYLE 5: PIN 1. CATHODE 2. COMMON ANODE 3. CATHODE 2 4. CATHODE 3 5. CATHODE 4 Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. SC−88A (SC−70−5/SOT−353) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 1.5x1.5, 0.5P CASE 511BJ ISSUE C DATE 06 OCT 2015 SCALE 4:1 D L A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L1 DETAIL A ÍÍÍÍ ÍÍÍÍ ÍÍÍÍ ALTERNATE TERMINAL CONSTRUCTIONS E PIN ONE REFERENCE ÉÉÉ ÉÉÉ EXPOSED Cu 0.10 C 2X 2X 0.10 C 0.05 C TOP VIEW DETAIL B A3 MOLD CMPD ÉÉ ÉÉ ÇÇ DIM A A1 A3 b D E e L L1 L2 A3 A1 DETAIL B ALTERNATE CONSTRUCTIONS GENERIC MARKING DIAGRAM* A 0.05 C 1 A1 NOTE 4 C SIDE VIEW DETAIL A e 1 SEATING PLANE XXM G XX = Specific Device Code M = Date Code G = Pb−Free Package 5X L 3 MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.20 0.30 1.50 BSC 1.50 BSC 0.50 BSC 0.40 0.60 --0.15 0.50 0.70 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. L2 RECOMMENDED MOUNTING FOOTPRINT* 6 4 6X b 0.10 C A BOTTOM VIEW 0.05 C B 6X 0.35 5X 0.73 NOTE 3 1.80 0.83 0.50 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON50296E WDFN6, 1.5 X 1.5, 0.5 P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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