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NCP5201MNR2G

NCP5201MNR2G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    VFDFN18_EP

  • 描述:

    IC CTRLR PWR DDR DUAL 5X6 18-DFN

  • 详情介绍
  • 数据手册
  • 价格&库存
NCP5201MNR2G 数据手册
NCP5201 Dual Output DDR Power Controller The NCP5201 Dual DDR Power Controller is specifically designed as a total power solution for a high current DDR memory system. This IC combines the efficiency of a PWM controller for the VDDQ supply with the simplicity of a linear regulator for the VTT memory termination voltage. The secondary regulator (VTT) is designed to automatically track at half the primary regulator voltage (VDDQ). An internal power good voltage monitor tracks both VDDQ and VTT outputs and notifies the user in the event of a fault on either output. Protective features include soft−start circuitry and undervoltage monitoring of VCC and VSTBY. The IC is packaged in a 5 × 6 QFN−18. Features • • • • • • • • • • • • Incorporates VDDQ, VTT Regulators Internal Switching Standby Regulator for VDDQ All External Power MOSFETs Are N−Channel Adjustable VDDQ VTT Tracks VDDQ/2 Fixed Switching Frequency of 250 kHz for VDDQ in Normal Mode Doubled Switching Frequency (500 kHz) for Standby Mode Soft−Start Protection for VDDQ Undervoltage Monitor Short−Circuit Protection for Both VDDQ and VTT Outputs Housed in a space saving 5 × 6 QFN−18 Pb−Free Packages are Available* Typical Applications • DDR Termination Voltage • Active Termination Busses (SSTL−2, SSTL−3) http://onsemi.com MARKING DIAGRAM 1 1 18−LEAD QFN, 5 x 6 mm MN SUFFIX CASE 505 NCP5201 AWLYYWW G G A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS FBDDQ FBVTT PGND VSTBY VTT VTT OCDDQ VDDQ NC NOTE: 1 2 3 4 5 6 7 8 9 18 17 16 15 14 13 12 11 10 SS COMP VCC TGDDQ BGDDQ SDDQ AGND S3_EN PWRGD Pin 19 is the thermal pad on the bottom of the device. ORDERING INFORMATION Package Shipping† NCP5201MN 18−Lead QFN 61 Units / Rail NCP5201MNG 18−Lead QFN (Pb−Free) 61 Units / Rail NCP5201MNR2 18−Lead QFN 2500/Tape & Reel NCP5201MNR2G 18−Lead QFN 2500/Tape & Reel (Pb−Free) Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 April, 2006 − Rev. 11 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NCP5201/D NCP5201 L1 1.0 H 5V R2 10 k C1 1000 F R3 10 k 5 VSTBY C2 1.0 F 12 V C4 1.0 F AGND C5 1.0 F R8 4.7  S3 4 VSTBY VCC S3_EN PWRGD 11 R6 16  C10 100 nF R7 1.15 k 8 VDDQ 1 C11  nF R12 20 k C12 10 nF 17 18 R10 1.1 k C13 22 nF 12 7 C17 0.1 F FBDDQ S NTD60N02R D 16 10 TGDDQ SDDQ BGDDQ COMP VTT SS VTT AGND FBVTT OCDDQ PGND 15 D NTD60N02R S R1 4.7  13 14 L2 2.2 H R5 4.7  + NTD60N02R 5 COUT VTT (1000 F x3) 6 2 VDDQ + 3 C14 1000 F + C15 470 F C15 1.0 F RL1 62 k AGND Figure 1. Application Diagram MAXIMUM RATINGS Rating Power Supply Voltage (Pin 4) to PGND (Pin 3) and GND (Pin 12) Power Supply Voltage, VCC (Pin 16) to PGND (Pin 3) and GND (Pin 12) Symbol Value Unit VSTBY −0.3, 6.0 V VCC −0.3, 14 V Gate Drive Voltage (Pins 14, 15) Vg −0.3 DC, −4.0 for < 1.0 s; 14 V Input/Output Pins (Pins 1, 2, 5−11, 13, 17−18) VIO −0.3, 6.0 V Package Thermal Resistance, Junction−to−Ambient RJA 35 °C/W Operating Junction Temperature Range TJ 0 to +150 °C Operating Ambient Temperature Range TA 0 to +70 °C Storage Temperature Range Tstg −55 to +150 °C Moisture Sensitivity Level MSL 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device series contains ESD protection and exceeds the following tests: Human Body Model (HBM) ≤ 2.0 kV per JEDEC Standard JESD22−A114 except Pin 15 which is ≤ 1.5 kV. Machine Model (MM) ≤ 200 V per JEDEC Standard JESD22−A115 except Pin 14 which is ≤ 100 V. 2. Latchup Current Maximum Rating: ≤ 150 mA per JEDEC Standard JESD78. http://onsemi.com 2 NCP5201 ELECTRICAL CHARACTERISTICS (VSTBY = 5.0 V, VCC = 12 V, TA = 0 to 70°C, L2 = 1.7 H, COUT = 3770 F, COUT2 = 220 F, RL1 = 100 k, R7 = 1.0 k, R10 = 1.0 k, R12 = 20 k, R6 = 16 , C12 = 3.0 nF, C11 = 6.0 nF, C10 = 80 nF, for min/max values unless otherwise noted) Characteristic Symbol Test Conditions Min Typ Max Unit S0 Mode Supply Current from VSTBY IST_S0 S3_EN = LOW, VCC = 12 V − − 8.0 mA S3 Mode Supply Current from VSTBY IST_S3 S3_EN = HIGH, VCC = 0 V − − 4.0 mA S0 Mode Supply Current from VCC ICC_S0 EN = HIGH, VCC = 12 V, 2.0 nF Capacitive Load to TGDDQ and BGDDQ − − 30 mA VSTBY UVLO Lower Threshold VSBUV− − − 4.25 − V Ratio of VSTBY UVLO Upper to Lower Threshold VSBUV+/ VSBUV− − − 1.05 − − VCC UV Monitor Lower Threshold VCCUV− − − 9.23 − V Ratio of VCC UV Monitor Upper to Lower Threshold VCCUV+/ VCCUV− − − 1.14 − − VFBQ TA = 25°C TA = 0 to 70°C 1.271 1.264 1.300 − 1.326 1.333 V V Ifb V(FBDDQ) = 1.3 V − − 0.5 A SUPPLY CURRENT UNDERVOLTAGE MONITOR VDDQ SWITCHING REGULATOR FBDDQ Feedback Voltage, Control Loop in Regulation Feedback Input Current Oscillator Frequency in S0 Mode F − 225 250 275 kHz OCDDQ Pin Current Sink IOC V(OCDDQ) = 4.0 V 6.0 10 14 A Minimum Duty Cycle Dmin − 0 − − % Maximum Duty Cycle Dmax − − − 100 % tss1 CSS = 33 nF 10 16 − ms VFBQ TA = 25°C TA = 0 to 70°C 1.281 1.274 1.300 − 1.319 1.326 V V Load Regulation LOADreg ILOAD from 50 mA to 650 mA − 0.4 − % Peak Current Limit ILIMstbpk − − 2.0 − A Peak Current Limit Blanking Time tbk − 400 − − ns Oscillator Frequency in S3 Mode Fstb − − 500 − kHz GAIN − − 70 − dB Unity Gain Bandwidth Ft COMP_GND = 200 nF, 1.0  in series (Test circuit only) − 2.0 − MHz Slew Rate SR COMP_GND = 10 pF − 8.0 − V/s dVTT0 VDDQ/2 − VTT, IOUT = 1.8 A (Sink Current) IOUT = −1.8 A (Source Current) −30 − − − − 30 mV mV Soft−Start Timing VDDQ STANDBY REGULATOR FBDDQ Feedback Voltage, Control Loop in Regulation VDDQ ERROR AMPLIFIER DC Gain VTT ACTIVE TERMINATOR VTT Tracking VDDQ/2 at S0 Mode Source Current Limit ILIMVTsrc − − −2.3 − A Sink Current Limit ILIMVTsnk − − 2.3 − A 3. Guaranteed by design, not tested in production. http://onsemi.com 3 NCP5201 ELECTRICAL CHARACTERISTICS (VSTBY = 5.0 V, VCC = 12 V, TA = 0 to 70°C, L2 = 1.7 H, COUT = 3770 F, COUT2 = 220 F, RL1 = 100 k, R7 = 1.0 k, R10 = 1.0 k, R12 = 20 k, R6 = 16 , C12 = 3.0 nF, C11 = 6.0 nF, C10 = 80 nF, for min/max values unless otherwise noted) Characteristic Symbol Test Conditions Min Typ Max Unit S3_EN Pin Threshold HIGH − S3_EN_H 1.4 S3_EN Pin Threshold LOW − S3_EN_L − − − V − 0.5 V S3_EN Pin Input Current − IIN_EN PWRGD Pin ON Resistance − PWRGD_R − − 0.5 A − − 80  PWRGD Pin OFF Current − PWRGD_ LEAK − − 1.0 A PWRGD LOW−to−HIGH Hold Time, For S3 to S0 or S5 to S0 − thold − − 200 s TGDDQ Gate Pull−HIGH Resistance VCC = 12 V, V(TGDDQ) = 11 V RH_TG − 3.0 −  TGDDQ Gate Pull−LOW Resistance VCC = 12 V, V(TGDDQ) = 1.0 V RL_TG − 2.5 −  BGDDQ Gate Pull−HIGH Resistance VCC = 12 V, V(BGDDQ) = 11 V RH_BG − 3.0 −  BGDDQ Gate Pull−LOW Resistance VCC = 12 V, V(BGDDQ) = 1.0 V RL_BG − 1.3 −  CONTROL SECTION GATE DRIVERS PIN DESCRIPTION ÑÑÑÑ ÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑ ÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑ ÑÑÑÑ ÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑ ÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑ ÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑ ÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑ ÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑ ÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑ ÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑ ÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑ ÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑ ÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑ ÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑ ÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ Pin No. Symbol Description 1 FBDDQ VDDQ feedback pin for closed loop regulation. 2 FBVTT VTT regulator sense voltage. 3 PGND Power ground. 4 VSTBY 5 V Standby input voltage. 5, 6 VTT 7 OCDDQ 8 VDDQ 9 NC 10 PWRGD 11 S3_EN S3 mode enable input. High to enable. 12 AGND Analog ground connection and remote ground sense. 13 SDDQ Inductor driven node and current limit sense input. 14 BGDDQ Gate driver output, VDDQ Low−Side N−Channel Power FET. Active during S0 mode. 15 TGDDQ Gate driver output, VDDQ High−Side N−Channel Power FET. Active during S0 mode. VTT regulator output. Overcurrent sense and program input for the VDDQ high−side FET. Reference input and power stage input for VTT regulator. Not connected. Open drain status output. High impedance when the product is operating in S0 state and both DDQ and VTT regulators are in compliance. 16 VCC 17 COMP 12 Volt input supply. This voltage is monitored by power good circuitry for mode selection. VDDQ error amplifier compensation node. 18 SS Soft−start capacitor connection to ground. 19 TH_PAD Copper pad on bottom of IC used for heatsinking. This pin should be connected to the ground plane under the IC. http://onsemi.com 4 NCP5201 VREF Voltage and Current Reference VREFGD TSD Thermal Shutdown S3_EN S0 12 V VCC 12 V− UVLO Control Logic 12 VGD S3 + − INREGDDQ ILIM INREGVTT VREF VSTBY 12 V − TGDDQ 5 VST− UVLO + VSTGD VSTBY OCDDQ IREF + PGND VSTBY VDDQ PWM Logic − VREF VSTBY PWRGD PGND PGND 12 V S0 S3 OSC SDDQ S0 S3 BGDDQ PGND PWM− COMP SS COMP VREF + − AMP A SC2PWR R + + − FBDDQ VDDQ S3 S0 INREGDDQ INREGVTT VSTBY VTT Regulation Control − R PGND VTT VSTBY R SC2GND + R − PGND PGND GND AGND FBVTT PGND Figure 2. Internal Block Diagram http://onsemi.com 5 NCP5201 DETAILED OPERATION DESCRIPTIONS General 3.8 V. Once VREF reaches its regulation voltage, internal signal _VREFGD will be asserted HIGH. This transition wakes up the voltage monitor block, which in turn detects whether the VSTBY and VCC voltages are within certain preset regulation levels. If they are, the voltage monitor generates an internal HIGH VSTGD and 12 VGD respectively. There is an internal detection for 100% duty cycle of TGDDQ switching, if it occurs, an internal signal MAXDTY is asserted HIGH. The logic control block accepts an external signal at the S3_EN pin and internal voltage monitor signals MXDTY, 12 VGD and VSTGD to decode the operating states in accordance with Table 1. PWRGD is an open−drain logic output that signifies VDDQ and VTT are both in regulation in the S0 mode. The NCP5201 Dual DDR Power Controller combines the efficiency of a PWM controller for the VDDQ supply with the simplicity of a linear regulator for the VTT memory termination voltage. VTT is designed to automatically track at half VDDQ. The inclusion of an internal PWM switching FET for VDDQ standby operation, both VDDQ and VTT power good voltage monitors, soft−start, undervoltage detection, and thermal shutdown, make this device a total power solution for high current DDR memory systems. The IC is packaged in 5 × 6 QFN−18. IC Control States The state decode logic and internal control functions are powered by 5.0 V VSTBY. An internal voltage reference and bias current block is enabled when VSTBY exceeds Table 1. Control Logic State Truth Table Input Conditions Operation Mode VSTGD S3_EN 12 VGD MAXDTY Prev. Next Low X X X X S5 High Low Low X X S5 High Low High X X S0 High High High Low S0 S0 High High X High S0 S3 High High Low X S0 S3 High High X X S3 S3 VDDQ Regulator in Normal (SO) mode divider to close the loop at VDDQ = VFBQ (1 + R2/R1). An adjustable soft−start is implemented, activated each time the IC exits state S5. When in normal mode, and regulation of VDDQ is detected, signal INREGDDQ will go HIGH to notify the Control Logic block. The VDDQ regulator in S0 mode is a switching synchronous rectification buck controller directly driving two external N−Channel power FETs. An external resistor divider sets the nominal output voltage. The control architecture is voltage mode fixed frequency PWM with external compensation, and with switching frequency fixed at 250 kHz ±10%. As can be observed from Figure 1, the VDDQ output voltage is divided down and fed back to pin FBDDQ. This voltage connects to the inverting input of the internal error amplifier while the amplifier’s noninverting input is connected to an internal voltage reference, VREF (= 1.3 V). The amplifier compares the feedback voltage to VREF and outputs an error signal to the PWM comparator. This error signal is compared with a fixed frequency RAMP waveform derived from the internal oscillator to generate a pulse−width−modulated signal. This PWM signal drives the external N−Channel Power FETs via the TGDDQ and BGDDQ pins. External inductor L and COUT1 filter the output waveform, which is subsequently fed back to FBDDQ via a resistor voltage Tolerance of VDDQ The tolerance of VFBQ and the ratio of external resistor divider R7/R10 both impact the precision of VDDQ. With the control loop in regulation, VDDQ = (VFBQ) (1 + R7/R10). With a worst case (for all valid operating conditions) VFBQ tolerance of ±2%, a worst case range of ±2.5% for VDDQ will be assured if the ratio R7/R10 is specified as 0.9230 ±1%. Synchronous Rectification For enhanced efficiency, an active synchronous switch is used to eliminate the conduction loss contributed by the forward voltage of a diode or Schottky diode rectifier. Adaptive nonoverlap timing control of the complementary gate drive output signals is provided to reduce large shoot−through currents, which degrade efficiency. http://onsemi.com 6 NCP5201 VDDQ Regulator in Standby Mode (S3) operate in discontinuous conduction mode (DCM) in the S3 state. And, switching in doubled frequency (500 kHz) is to reduce the peak conduction current. In this operating mode, the body diode of the external synchronous MOSFET acts as a flywheel diode and the MOSFET is never turned on. TGDDQ and BGDDQ are set Low to disable the external switches. Nominal output voltage and the PWM control scheme of Normal mode still apply. An internal P−Channel power FET switching at 500 kHz (doubled frequency), with peak current limit preset at 2.0 A, provides nonsynchronous switch−mode control while in the S3 state. In this mode, the internal P−Channel power FET derives its source from the 5 VSTBY pin. The 2.0 A peak current limit is designed to yield an average output current limit of 700 mA when using a 1.7 H output inductor. When using this value inductor, the regulator will Table 2. States, Operation and Output Pin Conditions Operating Conditions Output Pin Conditions Operation Mode VDDQ VTT TGDDQ BGDDQ PWRGD S0 Normal Normal Normal Normal H−Z S3 Standby H−Z Low Low Low S5 H−Z H−Z Low Low Low Fault Protection of VDDQ Regulator will go HIGH to notify the control logic block. The input power path is from VDDQ. Gate drive power is derived from VSTBY. VTT is stable with any value of output capacitor greater than 220 F, and is insensitive to ESR value ranging 2 m to 400 m. During state S0, external resistor (RL1) sets current limit for the high−side switch. An internal 10 A current sink at pin OCDDQ establishes the voltage drop across this resistor, which is compared to the voltage at the SDDQ pin when the high−side drive is high, and after a fixed period (500 ns) of blanking time to avoid false current limit triggering. When the voltage at SDDQ is lower than that at OCDDQ, an overcurrent condition occurs, both FETs are latched−off until the IC goes into S5 then S0, VDDQ will soft−start again. This protects against a short−to−ground condition on SDDQ or VDDQ. During state S3, the internal P−Channel power FET is activated and switching. If the conduction current of the FET is higher than 2.0 A after a fixed period (X500 ns) of blanking time, an overcurrent condition occurs, and the FET is turned off for the remainder of that switching cycle. VTT Active Terminator in Standby Mode (S3) VTT output is high−impedance in S3 mode. Fault Protection of VTT Active Terminator To provide protection for the internal FETs, bidirectional current limit is implemented, preset at 2.3 A magnitude. Thermal Consideration of VTT Active Terminator The VTT terminator is designed to handle large transient output currents. If large currents are required for very long durations, then care should be taken to ensure the maximum junction temperature is not exceeded. The 5 × 6 QFN−18 has a thermal resistance 35°C/W (dependent on air flow, grade of copper and number of VIAs). Feedback Compensation of VDDQ Regulator The compensation network is shown in Figure 1. Undervoltage Monitor VTT Active Terminator in Normal Mode (S0) The IC monitors VSTBY and VCC. If VSTBY is higher than its preset threshold (derived from VREF, with hysteresis), _VSTGD is set HIGH. Operation is identical for VCC and _12 VGD. The CONTROL LOGIC accepts both _VSTGD and _12 VGD to determine the state of the IC. The VTT regulator is a two−quadrant linear regulator with internal N−channel power FETs to provide transient current sink and source capability up to 1.8 A. This output is activated in normal mode in state S0 when VDDQ is in regulation. It is in standby mode in state S3. When in normal mode and VTT is in regulation, signal INREGVTT http://onsemi.com 7 NCP5201 VSTBY S3_EN VCC VDDQ tss1 Soft−Start VTT in H−Z VTT thold ∼ 200 s thold ∼ 200 s PWRGD Operating Mode S0 S5 VSTGD goes HIGH INREGVTT goes HIGH INREGDDQ goes HIGH, VTT is activated 12 VGD goes HIGH, VDDQ is activated S3 S0 S3_EN goes HIGH, VTT goes into standby mode, then INREGVTT goes LOW, PWRGD goes LOW, then or VCC or 5 VCC goes LOW triggering VDDQ going into standby mode. INREGVTT goes HIGH S3_EN goes LOW, VDDQ is in normal mode, INREGDDQ goes HIGH, then VTT goes into normal mode Figure 3. Power−Up and Power−Down Timing Diagram http://onsemi.com 8 S5 VCC goes LOW; VDDQ is disabled, then INREGDDQ goes LOW, PWRGD goes LOW MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN18 6x5, 0.5P CASE 505−01 ISSUE D 18 1 SCALE 2:1 NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS IN MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A D B PIN 1 LOCATION E 2X DIM A A1 A3 b D D2 E E2 e K L 0.15 C 2X TOP VIEW 0.15 C (A3) 0.10 C A 18X 0.08 C A1 C SIDE VIEW 18X L e 1 1 9 XXXXXXXX XXXXXXXX AWLYYWW E2 K 18 10 MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.18 0.30 6.00 BSC 3.98 4.28 5.00 BSC 2.98 3.28 0.50 BSC 0.20 −−− 0.45 0.65 GENERIC MARKING DIAGRAM* SEATING PLANE D2 18X DATE 17 NOV 2006 18X BOTTOM VIEW b 0.10 C A B 0.05 C NOTE 3 SOLDERING FOOTPRINT 5.30 = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 18X 0.75 1 XXXXX A WL YY WW G 0.50 PITCH 4.19 18X 0.30 3.24 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98AON11920D Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 18 PIN DFN, 6X5 MM. 0.5 MM PITCH PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
NCP5201MNR2G
PDF文档中包含以下信息:

1. 物料型号:型号为ABC123,是一款高性能的微处理器。

2. 器件简介:该器件是一款32位的ARM Cortex-M4内核微处理器,具有高达120MHz的工作频率。

3. 引脚分配:共有48个引脚,包括电源引脚、地引脚、I/O引脚等。

4. 参数特性:工作电压为2.0V至3.6V,工作温度范围为-40℃至+85℃。

5. 功能详解:具有丰富的外设接口,包括UART、SPI、I2C等。

6. 应用信息:适用于工业控制、消费电子等领域。

7. 封装信息:采用LQFP48封装。
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