NCP5203MNR2

NCP5203 2−in−1 DDR Power Controller The NCP5203 2−in−1 DDR Power Controller is a complete power solution for an ACPI compliant high current DDR memory system. This IC combines the efficiency of a PWM controller for the VDDQ supply with the simplicity of linear regulator for the VTT termination voltage. The NCP5203 contains a synchronous PWM buck controller for driving two external NFETs to form the DDR memory supply voltage (VDDQ). The
2.0 A user adjustable VTT terminator regulator has short circuit protection. An internal power good function monitors both the VDDQ and VTT outputs and signals if a fault occurs. Protective features include soft−start, undervoltage monitoring of 5VDUAL, over protection current (OCP), and thermal shutdown. The IC is packaged in 18−lead QFN. http://onsemi.com MARKING DIAGRAM 1 18 1 18−LEAD QFN, 5 x 6 mm MN SUFFIX CASE 505 NCP5203 AWLYYWW Features • • • • • • • • • • • • • • • Supports DDR I and DDR II Incorporates VDDQ, VTT Regulators Operates from Single 5 V Supply VTT Regulator includes Integrated Power FETs Sourcing/Sinking up to 2.0 A All External Power MOSFETs are N−Channel Adjustable VDDQ Adjustable VTT Fixed Switching Frequency of 300 kHz for VDDQ in S0 Fixed Switching Frequency of 600 kHz for VDDQ in S3 Soft−Start Protection for VDDQ Undervoltage Monitor of 5VDUAL Short−Circuit Protection for VDDQ and VTT Thermal Shutdown Housed in QFN−18 Pb−Free Package is Available* A WL YY WW = Assembly Location = Wafer Lot = Year = Work Week PIN CONNECTIONS VDDQEN VTTEN PGOOD REFSNS FBVTT AGND SS COMP FBDDQ 1 2 3 4 5 6 7 8 9 18 17 16 15 14 13 12 11 10 VDDQ VTT PGND BST BGDDQ TGDDQ 5VDUAL SWDDQ OCDDQ Typical Applications • DDR Memory Supply and Termination Voltage • Active Termination Busses (SSTL−2, SSTL−3) ORDERING INFORMATION Device Package Shipping† NCP5203MNR2 QFN 2500 Tape & Reel NCP5203MNR2G QFN (Pb−Free) 2500 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2005 January, 2005 − Rev. 1 1 Publication Order Number: NCP5203/D NCP5203 CL1 VTTEN VTTEN RL1 VDDQEN VDDQEN OCDDQ BST 5VDUAL 5VDUAL 5VDUAL PGOOD PGOOD M1 TGDDQ SS L VDDQ 2.5V, 15A NCP5203 CSS COUT1 SWDDQ VTT VTT 1.25 V, 2.0 A Peak M2 BGDDQ FBVTT PGND COUT2 COMP CZ1 RZ1 CP1 CZ2 RZ2 R1 FBDDQ R3 R2 REFSNS AGND VDDQ R4 Figure 1. Typical Application Diagram http://onsemi.com 2 PGOOD R5 5VDUAL CSS SS 5VDUAL VTTEN VDDQEN 5VDUAL Figure 2. Detailed Block Diagram http://onsemi.com 3 GND PGND VREF AGND 5VDUAL R11 R10 5VDUAL − + − + − + SC2GND SC2PWR OSC Control Logic PWM− COMP + AMP A UVLO PGND RZ1 CZ1 COMP PGND 5VDUAL PGND PGND M2 FBVTT VTT VDDQ CP1 RL1 REFSNS M1 PGND BGDDQ SWDDQ TGDDQ OCDDQ BST 5VDUAL R17 R16 VBST PGND VBST VBST 5VDUAL FBDDQ VREF R15 R14 VREF FBDDQ VREF FBDDQ IREF Thermal Shutdown − + − + − OVLO + − + VDDQS0 VDDQS3 VTTS0 VTTS3 TSD INREGDDQ ILIM VTT Regulation Control − VDDQ PWM Logic INREGVTT VTTS0 VTTS3 INREGDDQ INREGVTT VDDQS0 VDDQS3 FAULT 5VDL GD VREFGD VREF 5VDUAL UVLO Voltage and Current Reference M4 M3 VTT RZ2 CZ2 R1 R2 L R4 R3 COUT1 VDDQ 5VDUAL CBST COUT2 CDCPL CBULK LIN NCP5203 NCP5203 PIN FUNCTION DESCRIPTION Pin No. Symbol Description 1 VDDQEN 2 VTTEN VTT regulator enable input. Active high. 3 PGOOD Power good signal open−drain output. 4 REFSNS Reference voltage input of VTT regulator. 5 FBVTT VTT regulator feedback pin for closed loop regulation. 6 AGND Analog ground connection and remote ground sense. 7 SS Soft−start capacitor connection to ground. 8 COMP VDDQ error amplifier compensation node. 9 FBDDQ VDDQ regulator feedback pin for closed loop regulation. 10 OCDDQ Overcurrent sense and program input for the high−side FET of VDDQ regulator. 11 SWDDQ VDDQ regulator inductor driven node and current limit sense input. 12 5VDUAL 5VDUAL supply input. 13 TGDDQ Gate driver output for DDQ regulator high−side N−Channel power FET. 14 BGDDQ Gate driver output for DDQ regulator low−side N−Channel power FET. 15 BST 16 PGND 17 VTT 18 VDDQ VDDQ regulator enable input. Active high. Supply input of VDDQ regulator and 5 V boost capacitor connection. Power ground. VTT regulator output. Power input for VTT regulator. MAXIMUM RATINGS (Note 1) Symbol Value Unit Power Supply Voltage (Pin 12, 18) Rating 5VDUAL −0.3, 6.5 V Gate Drive Supply/Output Voltage (Pin 13, 14, 15) VBST, Vg −0.3, 14 V Switch DDQ (Pin 11) SWDDQ −1.0, 5VDUAL V Input/Output Pins (Pin 1, 2, 7; 4, 5, 17; 3, 8, 9, 10) VIO −0.3, 6.5 V Thermal Characteristics QFN−18 Plastic Package Thermal Resistance Junction−to−Ambient RJA 35 Operating Junction Temperature Range TJ 0 to +150 °C Operating Ambient Temperature Range TA 0 to +70 °C Storage Temperature Range Tstg −55 to +150 °C Moisture Sensitivity Level MSL 2.0 − Electro Static Discharge (ESD) Human Body Model Machine Model HBM MM 2.0 200 kV V °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. All voltages are with respect to AGND (Pin 6) and PGND (Pin 16). http://onsemi.com 4 NCP5203 ELECTRICAL CHARACTERISTICS (5VDUAL = 5.0 V, TA = 0 to 70°C) Characteristic Test Conditions Min Typ Max Unit Supply Voltage 5VDUAL Operating Voltage − 4.5 5.0 5.5 V BST Operating Voltage − 4.0 10 13.2 V Quiescent Supply Current (5VDUAL) − − 5.0 10 mA Shutdown Current VDDQEN = 0 V, VTTEN = 0 V − − 1.0 mA 3.6 3.95 4.3 V Supply Current Undervoltage Monitor 5VDUAL UVLO Lower Threshold Falling Edge 5VDUAL UVLO Hysteresis − − 0.2 − V (Note 2) − 150 −
C 1.225 1.232 1.25 1.25 1.275 1.268 V − − 1.0 A 262.5 300 337.5 kHz Thermal Shutdown Thermal Trip Point VDDQ Switching Regulator FBDDQ Feedback Voltage, Control Loop in Regulation TA = 0 to 70
C TA = 25
C Feedback Input Current VFBDDQ = 1.25 V Oscillator Frequency in S0 Mode VDDQEN = VTTEN = 5 V Oscillator Frequency in S3 Mode VDDQEN = 5 V, VTTEN = 0 V 500 600 700 kHz Ramp−Amplitude Voltage At Max Duty Cycle − 1.25 − V OCDDQ Pin Current Sink VOCDDQ = 4.0 V, TA = 25
C 23 35 47 A OCDDQ Pin Current Sink Temperature Coefficient (Note 2) − 3200 − ppm/
C Minimum Duty Cycle − 0 − − % Maximum Duty Cycle − − 90 − % Soft−start Current DDQEN = 5.0 V; VSS = 0 V 3.5 5.0 6.5 A Overvoltage Trip Threshold With respect to Error Comparator Threshold 115 130 − % Undervoltage Trip Threshold With respect to Error Comparator Threshold − 65 75 % DC Gain (Note 2) − 70 − dB Unity Gain Bandwidth COMP_GND = 220 nF, 1.0
in series (Note 2) − 2.0 − MHz Slew Rate COMP_GND = 10 pF (Note 2) − 8.0 − V/S TGDDQ Gate Pull−HIGH Resistance IOUT = 400 mA, VBST = 10 V − 3.5 −
TGDDQ Gate Pull−LOW Resistance IOUT = 400 mA, VBST = 10 V − 2.5 −
BGDDQ Gate Pull−HIGH Resistance IOUT = 400 mA, VBST = 10 V − 3.5 −
BGDDQ Gate Pull−LOW Resistance IOUT = 400 mA, VBST = 10 V − 1.3 −
Error Amplifier Gate Drivers 2. Guaranteed by design, not tested in production. http://onsemi.com 5 NCP5203 ELECTRICAL CHARACTERISTICS (continued) (5VDUAL = 5.0 V, TA = 0 to 70°C) Characteristic Test Conditions Min Typ Max −30 − − − − 30 Unit VTT Active Terminator VTT with Respect to REFSNS REFSNS – VTT, IOUT = 0 to 2.0 A (Sink Current) IOUT = 0 to –2.0 A (Source Current) mV Source Current Limit − − −2.5 −2.05 A Sink Current Limit − 2.05 2.75 − A VDDQEN Pin Threshold High − 1.4 − − V VDDQEN Pin Threshold Low − − − 0.5 V VDDQEN Pin Input Current VDDQEN = 5 V − 5.0 − A VTTEN Pin Threshold High − 1.4 − − V VTTEN Pin Threshold Low − − − 0.5 V VTTEN Pin Input Current VDDQEN = VTTEN = 5 V − 5.0 − A PGOOD Pin ON Resistance I_PGOOD = 5.0 mA − 80 −
PGOOD Pin OFF Current − − − 1.0 A Control Section http://onsemi.com 6 NCP5203 DETAILED OPERATING DESCRIPTION General fixed frequency Ramp waveform derived from the internal oscillator to generate a pulse−width−modulated signal. This PWM signal drives the external N−Channel Power FETs via the TGDDQ and BGDDQ pins. External inductor L and capacitor COUT1 filter the output. The VDDQ output voltage ramps up at a pre−defined soft−start rate each time the IC exits S5. When in normal mode, and regulation of VDDQ is detected, signal INREGDDQ will go high to notify the control logic block. For enhanced efficiency, an active synchronous switch is used to eliminate the conduction loss contributed by the forward voltage of a diode or Schottky diode rectifier. Adaptive non−overlap timing control of the complementary gate drive output signals is provided to reduce shoot−through current. The NCP5203 2−in−1 DDR Power Controller combines the efficiency of a VDDQ PWM controller with the simplicity of a linear regulator for VTT termination. Both VDDQ and VTT outputs can be user adjusted. The inclusion of both VDDQ and VTT power good voltage monitors, soft−start, VDDQ overvoltage and undervoltage detection, supply undervoltage monitors, and thermal shutdown, makes this device a total power solution for high current DDR memory systems. VDDQ Switching Regulator in Normal (S0) Mode The VDDQ regulator is a switching synchronous rectification buck controller directly driving two external N−Channel power FETs. An external resistor divider sets the nominal output voltage. The control architecture is voltage mode fixed frequency PWM (300 kHz ± 12.5%) with external compensation. The VDDQ output voltage is divided down and fed back to the inverting input of an internal amplifier through the FBDDQ pin to close the loop at VDDQ = VFBDDQ × (1 + R2/R1). This amplifier compares the feedback voltage with an internal VREF1 (= 1.25 V) to generate an error signal for the PWM comparator. This error signal is further compared with a Tolerance of VDDQ The tolerance of VFBDDQ and the ratio of the external resistor divider R2/R1 both impact the precision of VDDQ. When the control loop is in regulation, VDDQ = VFBDDQ × (1 + R2/R1). With a worst case (overtemperature) VFBDDQ tolerance of ±2%, a worst case range of 2.5% for VDDQ will be assured if the ratio R2/R1 is specified as 0.98985 ±1%. Table 1. State, Operation, Input and Output Condition Table USER INPUTS OPERATING CONDITIONS OUTPUT CONDITIONS MODE 5VDUAL UVLO VDDQEN VTTEN VDDQ VTT TGDDQ BGDDQ PGOOD S5 Low X X H−Z H−Z Low Low Low S0 High High High Normal Normal Normal (300 kHz) Normal (300 kHz) H−Z S3 High High Low Standby H−Z Normal (600 kHz) Low Low S5 High Low X H−Z H−Z Low Low Low VDDQ Regulator in Standby Mode (S3) During S3, the VDDQ regulator operates in asynchronous switch mode. The switching frequency is increased to 600 kHz, the low−side FET is disabled, and the body diode of the low side FET is used. The regulator will operate in discontinuous conduction mode (DCM) and the switching frequency is doubled to reduce peak conduction current. across this resistor. This voltage is compared to the voltage at SWDDQ pin when the TGDDQ is high after a fixed blanking period of 500 ns to avoid false current limit triggering. When the voltage at SWDDQ is lower than OCDDQ, an overcurrent condition occurs, upon which all outputs will be latched off to protect against a short−to−ground condition on SWDDQ or VDDQ. The IC will be reset once 5VDUAL or VDDQEN is cycled. VDDQ Regulator Fault Protection VDDQ Regulator Feedback Compensation During S0 and S3, the external resistor (RL1) sets the current limit for the high−side switch. An internal 35 A current sink at OCDDQ pin establishes a voltage drop The recommended compensation network is shown in Figure 2. http://onsemi.com 7 NCP5203 VTT Active Terminator in Normal Mode (S0) VTT Active Terminator Thermal Consideration The VTT active terminator is a two−quadrant linear regulator with two internal N−channel power FETs to provide transient current sink and source capability up to 2.0 A. It is activated in normal mode in S0 when the VTTEN pin is high and VDDQ is in regulation. When in the S0 state and VTT is in regulation, signal INREGVTT will go high to notify the control logic block. The VTT regulator is powered from VDDQ with the internal FET’s gate drive power derived from 5VDUAL. The VTT output voltage can be adjusted by using an external resistor divider connected to the REFSNS pin. This regulator is stable with any value of output capacitor greater than 470 F, and is insensitive to ESR ranging from 2.0 m
to 400 m
. The VTT terminator is designed to handle large transient output currents. If large currents are required for very long duration, then care should be taken to ensure the maximum junction temperature is not exceed. The 5x6 QFN−18 has a thermal resistance of 35
C/W (dependent on air flow, grade of copper, and number of vias). In order to take full advantage of this thermal capability, the thermal pad underneath must be soldered directly to a PCB metal substrate. Supply Voltages Undervoltage Monitor The IC continuously monitors 5VDUAL through the 5VDUAL pin. 5VDLGD is set high if 5VDUAL is higher than its preset threshold (derived from VREF with hysteresis). The IC will later latch off if 5VDUAL is in S0 providing both VDDQEN and VTTEN remain high. VTT Active Terminator in Normal Mode (S3) VTT output is high−impedance in S3 mode. VTT Active Terminator Fault Protection Thermal Shutdown To provide protection for the internal FETs, bi−directional current limit is implemented, preset at 2.4 A magnitude. This current limit is also used as constant current source during VTT startup. If the chip junction temperature exceeds 150
C, the entire IC will shutdown. The IC resumes normal operation only after 5VDUAL or VDDQEN is cycled. http://onsemi.com 8 NCP5203 5VDUAL VDDQEN VTTEN VTTEN IS DON’T CARE IN S5 Soft Start VDDQ 10ms VTT in H−Z VTT thold ∼ 200 s thold ∼ 200 s PGOOD OPERATING MODE S0 S5 5VDUAL comes out of UVLO S3 PGOOD goes HIGH. INREGVTT goes HIGH. INREGDDQ goes HIGH, VTT goes into normal mode. VDDQEN goes HIGH, VDDQ is activated. VTTEN goes HIGH, VTT is not activated until VDDQ is Good. S0 VTTEN goes LOW to activate S3 mode and to turn off VTT, then INREGVTT goes LOW, PGOOD goes LOW. PGOOD goes HIGH. INREGVTT goes HIGH. VTTEN goes HIGH, VTT goes into normal mode. Figure 3. Powerup and Powerdown Timing Diagram http://onsemi.com 9 S5 Both VDDQEN and VTTEN go LOW to trigger S5 mode; VDDQ and VTT is disabled, then INREGDDQ and INREGVTT go LOW, PGOOD goes LOW. MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN18 6x5, 0.5P CASE 505−01 ISSUE D 18 1 SCALE 2:1 NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS IN MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A D B PIN 1 LOCATION E 2X DIM A A1 A3 b D D2 E E2 e K L 0.15 C 2X TOP VIEW 0.15 C (A3) 0.10 C A 18X 0.08 C A1 C SIDE VIEW 18X L e 1 1 9 XXXXXXXX XXXXXXXX AWLYYWW E2 K 18 10 MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.18 0.30 6.00 BSC 3.98 4.28 5.00 BSC 2.98 3.28 0.50 BSC 0.20 −−− 0.45 0.65 GENERIC MARKING DIAGRAM* SEATING PLANE D2 18X DATE 17 NOV 2006 18X BOTTOM VIEW b 0.10 C A B 0.05 C NOTE 3 SOLDERING FOOTPRINT 5.30 = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 18X 0.75 1 XXXXX A WL YY WW G 0.50 PITCH 4.19 18X 0.30 3.24 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98AON11920D Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 18 PIN DFN, 6X5 MM. 0.5 MM PITCH PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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