NCP583
Ultra-Low Iq 150 mA CMOS
LDO Regulator with Enable
The NCP583 series of low dropout regulators are designed for
portable battery powered applications which require precise output
voltage accuracy and low quiescent current. These devices feature an
enable function which lowers current consumption significantly and
are offered in two small packages; SC−82AB and the SOT−563.
A 1.0 mF ceramic capacitor is the recommended value to be used
with these devices on the output pin.
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MARKING
DIAGRAMS
Features
•
•
•
Ultra−Low Dropout Voltage of 250 mV at 150 mA
Excellent Line Regulation of 0.05%/V
Excellent Load Regulation of 20 mV
High Output Voltage Accuracy of "2%
Ultra−Low Iq Current of 1.0 mA
Very Low Shutdown Current of 0.1 mA
Wide Output Voltage Range of 1.5 V to 3.3 V
Low Temperature Drift Coefficient on the Output Voltage of
"100 ppm/°C
Fold Back Protection Circuit
Input Voltage up to 6.5 V
These are Pb−Free Devices
SC−82AB
SQ SUFFIX
CASE 419C
4
XX
TT
•
•
•
•
•
•
•
•
1
1
6
1
SOT−563
XV SUFFIX
CASE 463A
XXX
XTT
1
X
T
= Device Code
= Traceability Information
ORDERING INFORMATION
Typical Applications
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
• Portable Equipment
• Hand−Held Instrumentation
• Camcorders and Cameras
Vin
Vout
+
Vref
Current Limit
CE
GND
Figure 1. Simplified Block Diagram
© Semiconductor Components Industries, LLC, 2016
January, 2016 − Rev. 15
1
Publication Order Number:
NCP583/D
NCP583
PIN FUNCTION DESCRIPTION
SOT−563 Pin
SC−82AB Pin
Symbol
Description
1
4
Vin
2
2
GND
Power supply ground.
3
3
Vout
Regulated output voltage.
4
−
NC
No connect.
5
−
GND
6
1
CE
Power supply input voltage.
Power supply ground.
Chip enable pin.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input Voltage
Vin
6.5
V
Input Voltage (CE Pin)
VCE
6.5
V
Output Voltage
Vout
−0.3 to Vin +0.3
V
Output Current
Iout
180
mA
Thermal Junction Resistance
SC−82AB
SOT−563
°C/W
RqJA
263
200
ESD Capability, Human Body Model, C = 100 pF, R = 1.5 kW
ESDHBM
2000
V
ESD Capability, Machine Model, C = 200 pF, R = 0 W
ESDMM
200
V
TA
−40 to +85
°C
TJ(max)
125
°C
Tstg
−55 to +150
°C
Operating Ambient Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (Vin = Vout + 1.0 V, TA = −40°C to +85°C, unless otherwise noted.)
Characteristic
Input Voltage
Output Voltage (1.0 mA ≤ Iout ≤ 30 mA)
Symbol
Min
Typ
Max
Unit
Vin
1.7
−
6.0
V
Vout
Vout x 0.98
−
Vout x 1.02
V
Line Regulation (Iout = 30 mA)
(Vout + 0.5 V v Vin v 6.0 V)
Regline
−
0.05
0.20
%/V
Load Regulation (1.0 mA ≤ Iout ≤ 150 mA)
Regload
−
20
40
mV
−
−
−
−
0.60
0.50
0.35
0.25
0.90
0.75
0.55
0.40
1.0
1.5
mA
Dropout Voltage (Iout = 150 mA)
Vout = 1.5 V
1.7 V v Vout v 1.9 V
2.1 V v Vout v 2.7 V
2.8 V v Vout v 3.3 V
VDO
V
Quiescent Current (Iout = 0 mA)
Iq
−
Output Current
Iout
150
−
−
mA
Shutdown Current (VCE = Gnd)
ISD
−
0.1
1.0
mA
Output Short Circuit Current (Vout = 0)
Ilim
−
40
−
mA
Enable Input Threshold Voltage − High
Enable Input Threshold Voltage − Low
Vthenh
Vthenl
1.2
0
−
−
6.0
0.3
V
Output Voltage Temperature Coefficient
(Iout = 30 mA, −40°C ≤ TA ≤ 85°C)
DVout/DT
−
±100
−
ppm/°C
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2
NCP583
TYPICAL CHARACTERISTICS
2.9
2.8
2.5
Vin = 3.1 V
OUTPUT VOLTAGE Vout (V)
OUTPUT VOLTAGE Vout (V)
3.0
2.0
3.3 V
3.5 V
1.5
1.0
0.5
Vout = 2.8 V
0
0
100
300
200
400
2.7
2.6
2.5
2.4
Iout = 1.0 mA
2.3
Iout = 30 mA
2.2
Iout = 50 mA
2.1
2.0
1.0
500
Vout = 2.8 V
2.0
OUTPUT CURRENT Iout (mA)
5.0
6.0
Figure 3. Output Voltage vs. Input Voltage
1.2
2.86
1.0
OUTPUT VOLTAGE, Vout (V)
QUIESCENT CURRENT, Iq (mA)
4.0
INPUT VOLTAGE Vin (V)
Figure 2. Output Voltage vs. Output Current
0.8
0.6
0.4
0.2
2.84
2.82
2.80
2.78
2.76
Vout = 2.8 V
0.0
0
1.0
2.0
4.0
3.0
5.0
Vout = 2.8 V
2.74
−40
6.0
−15
INPUT VOLTAGE Vin (V)
35
60
85
Figure 5. Output Voltage vs. Temperature
1.4
QUIESCENT CURRENT, Iq (mA)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Vout = 1.5 V
0.0
−40
10
TEMPERATURE (°C)
Figure 4. Quiescent Current vs. Input Voltage
QUIESCENT CURRENT, Iq (mA)
3.0
−15
10
35
60
1.2
1.0
0.8
0.6
0.4
0.2
Vout = 2.8 V
0.0
−40
85
TEMPERATURE (°C)
−15
10
35
60
TEMPERATURE (°C)
Figure 6. Quiescent Current vs. Temperature
Figure 7. Quiescent Current vs. Temperature
www.onsemi.com
3
85
NCP583
TYPICAL CHARACTERISTICS
0.40
Vout = 1.5 V
0.9
85°C
0.35
DROPOUT VOLTAGE, VDO (V)
DROPOUT VOLTAGE, VDO (V)
1.0
0.8
0.30
25°C
0.7
85°C
25°C
0.25
0.6
−40°C
0.5
0.20
0.4
0.15
0.3
−40°C
0.10
0.2
0.05
0.1
Vout = 1.8 V
0.0
0
25
50
75
100
0.00
0
150
125
25
OUTPUT CURRENT Iout (mA)
100
125
150
Figure 9. Dropout Voltage vs. Output Current
0.40
70
RIPPLE REJECTION, RR (dB)
0.35
0.30
0.25
85°C
25°C
0.20
0.15
−40°C
0.10
0.05
Vout = 2.8 V
25
50
75
100
125
Vout = 2.8 V
Vin = 3.8 V + 0.5 Vp−p
Cout = 0.1 mF
60
50
40
30
Iout = 1.0 mA
20
Iout = 30 mA
10
Iout = 50 mA
0
0.1
150
10
1
OUTPUT CURRENT Iout (mA)
FREQUENCY, f (kHz)
Figure 11. Ripple Rejection vs. Frequency
Figure 10. Dropout Voltage vs. Output Current
70
RIPPLE REJECTION, RR (dB)
DROPOUT VOLTAGE, VDO (V)
75
OUTPUT CURRENT Iout (mA)
Figure 8. Dropout Voltage vs. Output Current
0.00
0
50
Vout = 2.8 V
Vin = 3.8 V + 0.5 Vp−p
Cout = 1.0 mF
60
50
40
30
Iout = 1.0 mA
20
Iout = 30 mA
10
Iout = 50 mA
0
0.1
10
1
100
FREQUENCY, f (kHz)
Figure 12. Ripple Rejection vs. Frequency
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4
100
NCP583
TYPICAL CHARACTERISTICS
Cout = 0.1 mF
6
5
5.0
Input Voltage
4.5
4
4.0
3
3.5
2
Output Voltage
3.0
1
INPUT VOLTAGE, Vin (V)
OUTPUT VOLTAGE, Vout (V)
5.5
0
2.5
2.0
0
20
40
60
80
100
120
140
160
180
−1
200
TIME, T (ms)
6
5.0
5
Input Voltage
4.5
4
4.0
3
3.5
2
Output Voltage
3.0
1
INPUT VOLTAGE, Vin (V)
OUTPUT VOLTAGE, Vout (V)
Cout = 0.47 mF
5.5
0
2.5
2.0
0
20
40
60
80
100
120
140
160
180
−1
200
TIME, T (ms)
Cout = 1.0 mF
6
5
5.0
Input Voltage
4.5
4
4.0
3
3.5
2
Output Voltage
3.0
1
0
2.5
2.0
0
20
40
60
80
100
120
140
160
TIME, T (ms)
Figure 13. Input Transient Response
(Vout = 2.8 V, Iout = 30 mA, tr = tf = 5.0 ms, Cin = 0)
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5
180
−1
200
INPUT VOLTAGE, Vin (V)
OUTPUT VOLTAGE, Vout (V)
5.5
NCP583
TYPICAL CHARACTERISTICS
Cout = 1.0 mF
20
4.5
10
Output Current
4.0
0
3.5
−10
Output Voltage
3.0
2.5
OUTPUT CURRENT, Iout (mA)
OUTPUT VOLTAGE, Vout (V)
5.0
2.0
0
100
200
300
400
500
600
700
800
900
1000
TIME, T (ms)
Cout = 10 mF
20
4.5
10
Output Current
4.0
0
3.5
−10
Output Voltage
3.0
2.5
2.0
0
100
200
300
400
500
600
700
800
TIME, T (ms)
Figure 14. Load Transient Response
(Vout = 2.8 V, tr = tf = 5.0 ms, Vin = 3.8 V)
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6
900
1000
OUTPUT CURRENT, Iout (mA)
OUTPUT VOLTAGE, Vout (V)
5.0
NCP583
TYPICAL CHARACTERISTICS
Cout = 0.1 mF
150
4.5
100
Output Current
4.0
50
3.5
0
Output Voltage
3.0
2.5
OUTPUT CURRENT, Iout (mA)
OUTPUT VOLTAGE, Vout (V)
5.0
2.0
0
20
40
60
80
100
120
140
160
180
200
TIME, T (ms)
Cout = 0.47 mF
150
4.5
100
Output Current
4.0
50
3.5
0
Output Voltage
3.0
2.5
OUTPUT CURRENT, Iout (mA)
OUTPUT VOLTAGE, Vout (V)
5.0
2.0
0
20
40
60
80
100
120
140
160
180
200
TIME, T (ms)
150
4.5
100
Output Current
4.0
50
3.5
0
Output Voltage
3.0
2.5
2.0
0
20
40
60
80
100
120
140
160
TIME, T (ms)
Figure 15. Load Transient Response
(Vout = 2.8 V, tr = tf = 5.0 ms, Vin = 3.8 V)
www.onsemi.com
7
180
200
OUTPUT CURRENT, Iout (mA)
OUTPUT VOLTAGE, Vout (V)
Cout = 1.0 mF
5.0
NCP583
APPLICATION INFORMATION
Input Decoupling
Output Decoupling
A 1.0 mF ceramic capacitor is the recommended value to
be connected between Vin and GND. For PCB layout
considerations, the traces of Vin and GND should be
sufficiently wide in order to minimize noise and prevent
unstable operation.
It is recommended to use a 0.1 mF ceramic capacitor on
the Vout pin. For better performance, select a capacitor with
low Equivalent Series Resistance (ESR). For PCB layout
considerations, place the output capacitor close to the
output pin and keep the leads short as possible.
ORDERING INFORMATION
Device
Output Type / Features
Nominal
Output Voltage
Marking
Package
Shipping†
NCP583SQ15T1G
Active High w/Enable
1.5
A5
SC−82AB
(Pb−Free)
3000 / Tape & Reel
NCP583SQ18T1G
Active High w/Enable
1.8
A8
SC−82AB
(Pb−Free)
3000 / Tape & Reel
NCP583SQ25T1G
Active High w/Enable
2.5
B5
SC−82AB
(Pb−Free)
3000 / Tape & Reel
NCP583SQ27T1G
Active High w/Enable
2.7
B7
SC−82AB
(Pb−Free)
3000 / Tape & Reel
NCP583SQ28T1G
Active High w/Enable
2.8
B8
SC−82AB
(Pb−Free)
3000 / Tape & Reel
NCP583SQ30T1G
Active High w/Enable
3.0
C0
SC−82AB
(Pb−Free)
3000 / Tape & Reel
NCP583SQ33T1G
Active High w/Enable
3.3
C3
SC−82AB
(Pb−Free)
3000 / Tape & Reel
NCP583XV15T2G
Active High w/Enable
1.5
G15B
SOT−563
(Pb−Free)
4000 / Tape & Reel
NCP583XV18T2G
Active High w/Enable
1.8
G18B
SOT−563
(Pb−Free)
4000 / Tape & Reel
NCP583XV25T2G
Active High w/Enable
2.5
G25B
SOT−563
(Pb−Free)
4000 / Tape & Reel
NCP583XV26T2G
Active High w/Enable
2.6
G26B
SOT−563
(Pb−Free)
4000 / Tape & Reel
NCP583XV28T2G
Active High w/Enable
2.8
G28B
SOT−563
(Pb−Free)
4000 / Tape & Reel
NCP583XV29T2G
Active High w/Enable
2.9
G29B
SOT−563
(Pb−Free)
4000 / Tape & Reel
NCP583XV30T2G
Active High w/Enable
3.0
G30B
SOT−563
(Pb−Free)
4000 / Tape & Reel
NCP583XV31T2G
Active High w/Enable
3.1
G31B
SOT−563
(Pb−Free)
4000 / Tape & Reel
NCP583XV33T2G
Active High w/Enable
3.3
G33B
SOT−563
(Pb−Free)
4000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Other voltages are available. Consult your ON Semiconductor representative.
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−82AB
CASE 419C−02
ISSUE F
DATE 22 JUN 2012
SCALE 4:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. 419C−01 OBSOLETE. NEW STANDARD IS
419C−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
A
G
C
D 3 PL
N
3
4
K
B
S
1
2
H
J
F
L
0.05 (0.002)
0.90
0.035
0.70
0.028
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.008
0.016
0.012
0.020
0.043
0.059
0.000
0.004
0.004
0.010
0.004
−−−
0.002 BSC
0.008 REF
0.07
0.09
XXX M
G
0.65
0.026
0.95
0.037
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.20
0.40
0.30
0.50
1.10
1.50
0.00
0.10
0.10
0.26
0.10
−−−
0.05 BSC
0.20 REF
1.80
2.40
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
1.30
0.0512
DIM
A
B
C
D
F
G
H
J
K
L
N
S
1
XXX = Specific Device Code
M
= Month Code
G
= Pb−Free Package
1.90
0.075
SCALE 10:1
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98ARB18939C
SC−82AB
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE H
6
1
SCALE 4:1
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
DATE 26 JAN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOT−563, 6 LEAD
CASE 463A
ISSUE H
DATE 26 JAN 2021
GENERIC
MARKING DIAGRAM*
XX MG
1
XX = Specific Device Code
M = Month Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
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