NCP59744MN2ADJTBG

NCP59744MN2ADJTBG

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    VQFN20

  • 描述:

    800MV~3.6V 3A 5.5V

  • 数据手册
  • 价格&库存
NCP59744MN2ADJTBG 数据手册
DATA SHEET www.onsemi.com Linear Regulator Dual-Rail, Very Low-Dropout, Programmable Soft-Start WLCSP10 CASE 567ZC MARKING DIAGRAMS 3.0 A 1 NCP59744 The NCP59744 is dual−rail very low dropout voltage regulator that is capable of providing an output current in excess of 3.0 A with a dropout voltage of 75 mV typ. at full load current. The devices are stable with ceramic and other low ESR output capacitors. This series contains adjustable output voltage version with output voltage down to 0.8 V. Internal protection features consist of built−in thermal shutdown and output current limiting protection. User−programmable Soft−Start and Power Good pins are available. The NCP59744 is offered in DFN10 3x3, QFN20 5x5 and WLCSP10 packages. Features • • • • • • • • • • • DFN10 CASE 485C QFN20 CASE 485DB Output Current in Excess of 3.0 A 0.25% Typical Accuracy Over Line and Load VIN Range: 0.8 V to 5.5 V VBIAS Range: 2.2 V to 5.5 V Output Voltage Range: 0.8 V to 3.6 V Dropout Voltage: 75 mV at 3 A Programmable Soft Start Open Drain Power Good Output Excellent Transient Response Current Limit and Thermal Shutdown Protection These Devices are Pb−Free and are RoHS Compliant 1 NCP59744 AWLYYWWG G QFN20 NCP 59744 AYWG G DFN10 59744 ALYWW WLCSP10 A WL YY, Y WW, W G = Assembly Location = Wafer Lot = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering, marking and shipping information on page 13 of this data sheet. Applications • • • • Telecom and Industrial Equipment Point of Load Regulation FPGA, DSP and Logic Power Supplies Switching Power Supply Post Regulation Applications with Specific Start−up Time or Sequencing Requirements NCP59744 Figure 1. Typical Application Schematic © Semiconductor Components Industries, LLC, 2015 January, 2022 − Rev. 7 1 Publication Order Number: NCP59744/D IN NC NC NC OUT NCP59744 5 4 3 2 1 6 20 7 19 GND 8 9 18 17 10 16 11 12 13 14 15 EN GND NC NC SS IN IN IN PG BIAS QFN20−5y5−0.65P (Top View) OUT OUT OUT NC FB IN 1 IN PG BIAS EN 2 3 4 Thermal Pad 10 OUT 9 OUT FB SS GND 8 7 6 5 OUT A1 A2 IN OUT B1 B2 IN FB C1 C2 PG SS D1 D2 BIAS GND E1 E2 EN DFN10−3y3−0.5P (Top View) Figure 2. Pin Connections Figure 3. Simplified Schematic Block Diagram www.onsemi.com 2 WLCSP10 (Top View) NCP59744 Table 1. PIN FUNCTION DESCRIPTION Name DFN10 QFN20 WLCSP10 Description IN 1, 2 5−8 A2, B2 EN 5 11 E2 Enable pin. Driving this pin high enables the regulator. Driving this pin low puts the regulator into shutdown mode. This pin must not be left floating. SS 7 15 D1 Soft−Start pin. A capacitor connected on this pin to ground sets the start−up time. If this pin is left floating, the regulator output soft−start ramp time is typically 200 ms. BIAS 4 10 D2 Bias input voltage for error amplifier, reference, and internal control circuits. PG 3 9 C2 Power−Good (PG) is an open−drain, active−high output that indicates the status of VOUT. When VOUT exceeds the PG trip threshold, the PG pin goes into a high−impedance state. When VOUT is below this threshold the pin is driven to a low−impedance state. A pull−up resistor from 10 kW to 1 MW should be connected from this pin to a supply up to 5.5 V. The supply can be higher than the input voltage. Alternatively, the PG pin can be left floating if output monitoring is not necessary. FB 8 16 C1 This pin is the feedback connection to the center tap of an external resistor divider network that sets the output voltage. This pin must not be left floating. OUT 9, 10 1, 18−20 A1, B1 NC N/A 2−4, 13, 14, 17 N/A No connection. This pin can be left floating or connected to GND to allow better thermal contact to the top−side plane. GND 6 12 E1 Ground PAD/TAB Unregulated input to the device. Regulated output voltage. It is recommended that the output capacitor ≥ 2.2 mF. Should be soldered to the ground plane for increased thermal performance Table 2. ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Input Voltage Range Parameter VIN −0.3 to +6 V Input Voltage Range VBIAS −0.3 to +6 V Enable Voltage Range VEN −0.3 to +6 V Power−Good Voltage Range VPG −0.3 to +6 V PG Sink Current IPG 0 to +1.5 mA SS Pin Voltage Range VSS −0.3 to +6 V Feedback Pin Voltage Range VFB −0.3 to +6 V Output Voltage Range VOUT −0.3 to (VIN + 0.3) ≤ 6 V Maximum Output Current IOUT Internally Limited PD See Thermal Characteristics Table and Formula TJMAX +150 °C Output Short Circuit Duration Continuous Total Power Dissipation Maximum Junction Temperature Storage Junction Temperature Range Indefinite TSTG −55 to +150 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22−A114 ESD Machine Model tested per EIA/JESD22−A115 Latch−up Current Maximum Rating tested per JEDEC standard: JESD78. www.onsemi.com 3 NCP59744 Table 3. THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance, Junction−to−Ambient (Note 5) RqJA 41.5 °C/W Thermal Resistance, Junction−to−Case (bottom) (Note 7) RqJC 6.6 °C/W Thermal Resistance, Junction−to−Ambient (Note 5) RqJA 35.4 °C/W Thermal Resistance, Junction−to−Board (Note 6) RqJB 14.7 °C/W Thermal Resistance, Junction−to−Case (bottom) (Note 7) RqJC 3.9 °C/W Thermal Resistance, Junction−to−Ambient (Note 5) RqJA 72 °C/W Thermal Characterization Parameter, Junction−to−Case (top) YJT 0.9 °C/W Thermal Characteristics, DFN10, 3x3, 0.5P package Thermal Characteristics, QFN20, 5x5, 0.65P package Thermal Characteristics, WLCSP10 package 3. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 4. Thermal data are derived by thermal simulations based on methodology specified in the JEDEC JESD51 series standards. The following assumptions are used in the simulations: − These data were generated with only a single device at the center of a high−K (2s2p) board with 3 in x 3 in copper area which follows the JEDEC51.7 guidelines. Top and Bottom layer 2 oz. copper, inner planes 1 oz. copper. − DFN10: The exposed pad is connected to the PCB ground inner layer through a 3x2 thermal via array. Vias are 0.3 mm diameter, plated. Each of top and bottom copper layers are assumed to have thermal conductivity representing 20% copper coverage. − QFN20: The exposed pad is connected to the PCB ground inner layer through a 4x4 thermal via array. Vias are 0.3 mm diameter, plated. Each of top and bottom copper layers has a dedicated pattern for 20% copper coverage. 5. The junction−to−ambient thermal resistance under natural convection is obtained in a simulation on a high−K board, following the JEDEC51.7 guidelines with assumptions as above, in an environment described in JESD51−2a. 6. The junction−to−board thermal resistance is simulated in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51−8. 7. The junction−to−case (bottom) thermal resistance is obtained by simulating a cold plate test on the IC exposed pad. Test description can be found in the ANSI SEMI standard G30−88. Table 4. RECOMMENDED OPERATING CONDITIONS (Note 8) Rating Symbol Min Max Unit Input Voltage VIN VOUT + VDO 5.5 V Bias Voltage VBIAS 2.2 5.5 V TJ −40 125 °C Junction Temperature Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 8. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. www.onsemi.com 4 NCP59744 Table 5. ELECTRICAL CHARACTERISTICS − NCP59744FCTCADJT2G − WLCSP10 (At VEN = 1.1 V, VIN = VOUT + 0.3 V, CBIAS = CIN = 0.1 mF, COUT = 10 mF, IOUT = 50 mA, VBIAS = 5.0 V, TJ = −40°C to +125°C, unless otherwise noted. Typical values are at TJ = +25°C.) Symbol VIN Parameter Test Conditions Input voltage range Min Typ VOUT +VDO VBIAS Bias pin voltage range UVLO Undervoltage Lock−out VBIAS Rising Hysteresis VREF Internal reference (Adj.) VOUT Output voltage range Unit 5.5 V 5.5 V 1.2 − 1.6 0.4 1.9 − V TJ = +25°C 0.796 0.8 0.804 V VIN = 5 V, IOUT = 1.5 A, VBIAS = 5 V VREF Accuracy (Note 9) 2.97 V ≤ VBIAS ≤ 5.25 V, VOUT + 1.62 V ≤ VBIAS 50 mA ≤ IOUT ≤ 3.0 A −1.0 VOUT/VIN Line regulation VOUT(NOM) + 0.3 ≤ VIN ≤ 5.5 V 0.0006 %/V VOUT/IOUT Load regulation 0 mA ≤ IOUT ≤ 50 mA 0.005 %/mA 50 mA ≤ IOUT ≤ 3.0 A 0.01 VDO ICL 2.2 Max VIN dropout voltage (Note 10) IOUT = 3.0 A, VBIAS – VOUT(NOM) ≥ 1.62 V VBIAS dropout voltage (Note 10) IOUT = 3.0 A, VIN = VBIAS 1.13 1.5 V 4.6 7 A 1.3 2 mA 1 15 mA 95 250 nA VOUT = 80% x VOUT(NOM) 0 mA ≤ IOUT ≤ 3.0 A ISHDN Shutdown supply current VEN ≤ 0.4 V Feedback pin current 0 mA ≤ IOUT ≤ 3.0 A Power−supply rejection (VIN to VOUT) 1 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 72 1 MHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 50 1 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 80 1 MHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 48 Power−supply rejection (VBIAS to VOUT) Noise Output noise voltage 100 Hz to 100 kHz, lOUT = 3 A Css = 1.0 nF VTRAN %VOUT droop during load transient tSTRT ISS %/A mV Bias pin current −250 % 140 Current limit IFB V +1.0 75 IBIAS PSRR 3.8 ±0.25 3.6 dB dB 18 x VOUT mVrms IOUT = 50 mA to 3.0 A at 1 A/ms, COUT = 10 mF, VOUT = 3.3 V ±1.5 %VOUT Minimum startup time IOUT = 1.5 A, CSS = open 200 ms Soft−start charging current VSS = 0.4 V 0.45 mA VEN, HI Enable input high level 1.1 5.5 V VEN, LO Enable input low level 0 0.4 V VEN,HYS Enable pin hysteresis 100 mV VEN,DG Enable pin deglitch time 20 ms IEN Enable pin current VEN = 5 V VIT PG trip threshold VOUT decreasing VHYS PG trip hysteresis 86.5 0.3 1 mA 90 93.5 %VOUT 3 VPG, LO PG output low voltage IPG = 1 mA (sinking), VOUT < VIT IPG, LKG PG leakage current VPG = 5.25 V, VOUT > VIT 0.03 Thermal shutdown temperature Shutdown, temperature increasing Reset, temperature decreasing +165 +140 TSD %VOUT 0.3 V 1 mA °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 9. Adjustable devices tested at 0.8 V; external resistor tolerance is not taken into account. 10. Dropout is defined as the voltage from the input to VOUT when VOUT is 2% below nominal. www.onsemi.com 5 NCP59744 Table 6. ELECTRICAL CHARACTERISTICS − NCP59744MN1ADJTBG − DFN10 (At VEN = 1.1 V, VIN = VOUT + 0.3 V, CBIAS = CIN = 0.1 mF, COUT = 10 mF, IOUT = 50 mA, VBIAS = 5.0 V, TJ = −40°C to +125°C, unless otherwise noted. Typical values are at TJ = +25°C.) Symbol VIN Parameter Test Conditions Input voltage range Min Typ VOUT +VDO VBIAS Bias pin voltage range UVLO Undervoltage Lock−out VBIAS Rising Hysteresis VREF Internal reference (Adj.) VOUT Output voltage range Unit 5.5 V 5.5 V 1.2 − 1.6 0.4 1.9 − V TJ = +25°C 0.796 0.8 0.804 V VIN = 5 V, IOUT = 1.5 A, VBIAS = 5 V VREF Accuracy (Note 11) 2.97 V ≤ VBIAS ≤ 5.25 V, VOUT + 1.62 V ≤ VBIAS 50 mA ≤ IOUT ≤ 3.0 A −1.0 VOUT/VIN Line regulation VOUT(NOM) + 0.3 ≤ VIN ≤ 5.5 V 0.0006 %/V VOUT/IOUT Load regulation 0 mA ≤ IOUT ≤ 50 mA 0.005 %/mA 50 mA ≤ IOUT ≤ 3.0 A 0.01 VDO ICL 2.2 Max VIN dropout voltage (Note 12) IOUT = 3.0 A, VBIAS – VOUT(NOM) ≥ 1.62 V VBIAS dropout voltage (Note 12) IOUT = 3.0 A, VIN = VBIAS 1.13 1.5 V 4.6 7 A 1.3 2 mA 1 15 mA 95 250 nA VOUT = 80% x VOUT(NOM) 0 mA ≤ IOUT ≤ 3.0 A ISHDN Shutdown supply current VEN ≤ 0.4 V Feedback pin current 0 mA ≤ IOUT ≤ 3.0 A Power−supply rejection (VIN to VOUT) 1 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 72 1 MHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 50 1 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 80 1 MHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 48 Power−supply rejection (VBIAS to VOUT) Noise Output noise voltage 100 Hz to 100 kHz, lOUT = 3 A Css = 1.0 nF VTRAN %VOUT droop during load transient tSTRT ISS %/A mV Bias pin current −250 % 160 Current limit IFB V +1.0 95 IBIAS PSRR 3.8 ±0.25 3.6 dB dB 18 x VOUT mVrms IOUT = 50 mA to 3.0 A at 1 A/ms, COUT = 10 mF, VOUT = 3.3 V ±1.5 %VOUT Minimum startup time IOUT = 1.5 A, CSS = open 200 ms Soft−start charging current VSS = 0.4 V 0.45 mA VEN, HI Enable input high level 1.1 5.5 V VEN, LO Enable input low level 0 0.4 V VEN,HYS Enable pin hysteresis 100 mV VEN,DG Enable pin deglitch time 20 ms IEN Enable pin current VEN = 5 V VIT PG trip threshold VOUT decreasing VHYS PG trip hysteresis 86.5 0.3 1 mA 90 93.5 %VOUT 3 VPG, LO PG output low voltage IPG = 1 mA (sinking), VOUT < VIT IPG, LKG PG leakage current VPG = 5.25 V, VOUT > VIT 0.03 Thermal shutdown temperature Shutdown, temperature increasing Reset, temperature decreasing +165 +140 TSD %VOUT 0.3 V 1 mA °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 11. Adjustable devices tested at 0.8 V; external resistor tolerance is not taken into account. 12. Dropout is defined as the voltage from the input to VOUT when VOUT is 2% below nominal. www.onsemi.com 6 NCP59744 Table 7. ELECTRICAL CHARACTERISTICS − NCP59744MN2ADJTBG − QFN20 (At VEN = 1.1 V, VIN = VOUT + 0.3 V, CBIAS = CIN = 0.1 mF, COUT = 10 mF, IOUT = 50 mA, VBIAS = 5.0 V, TJ = −40°C to +125°C, unless otherwise noted. Typical values are at TJ = +25°C.) Symbol VIN Parameter Test Conditions Input voltage range Min Typ VOUT +VDO VBIAS Bias pin voltage range UVLO Undervoltage Lock−out VBIAS Rising Hysteresis VREF Internal reference (Adj.) VOUT Output voltage range Unit 5.5 V 5.5 V 1.2 − 1.6 0.4 1.9 − V TJ = +25°C 0.796 0.8 0.804 V VIN = 5 V, IOUT = 1.5 A, VBIAS = 5 V VREF Accuracy (Note 13) 2.97 V ≤ VBIAS ≤ 5.25 V, VOUT + 1.62 V ≤ VBIAS 50 mA ≤ IOUT ≤ 3.0 A −1.0 VOUT/VIN Line regulation VOUT(NOM) + 0.3 ≤ VIN ≤ 5.5 V 0.0006 %/V VOUT/IOUT Load regulation 0 mA ≤ IOUT ≤ 50 mA 0.005 %/mA 50 mA ≤ IOUT ≤ 3.0 A 0.01 VIN dropout voltage (Note 14) IOUT = 3.0 A, VBIAS – VOUT(NOM) ≥ 1.62 V 115 195 mV VBIAS dropout voltage (Note 14) IOUT = 3.0 A, VIN = VBIAS 1.13 1.5 V 4.6 6 A 1.3 2 mA 1 10 mA 95 250 nA VDO ICL 2.2 Max Current limit VOUT = 80% x VOUT(NOM) IBIAS Bias pin current 0 mA ≤ IOUT ≤ 3.0 A ISHDN Shutdown supply current VEN ≤ 0.4 V Feedback pin current 0 mA ≤ IOUT ≤ 3.0 A Power−supply rejection (VIN to VOUT) 1 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 72 1 MHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 50 1 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 80 1 MHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 48 IFB PSRR Power−supply rejection (VBIAS to VOUT) Noise Output noise voltage 100 Hz to 100 kHz, lOUT = 3 A Css = 1.0 nF VTRAN %VOUT droop during load transient tSTRT ISS 3.8 ±0.25 −250 3.6 V +1.0 % %/A dB dB 18 x VOUT mVrms IOUT = 50 mA to 3.0 A at 1 A/ms, COUT = 10 mF, VOUT = 3.3 V ±1.5 %VOUT Minimum startup time IOUT = 1.5 A, CSS = open 200 ms Soft−start charging current VSS = 0.4 V 0.45 mA VEN, HI Enable input high level 1.1 5.5 V VEN, LO Enable input low level 0 0.4 V VEN,HYS Enable pin hysteresis 100 mV VEN,DG Enable pin deglitch time 20 ms IEN Enable pin current VEN = 5 V VIT PG trip threshold VOUT decreasing VHYS PG trip hysteresis 86.5 0.3 1 mA 90 93.5 %VOUT 3 VPG, LO PG output low voltage IPG = 1 mA (sinking), VOUT < VIT IPG, LKG PG leakage current VPG = 5.25 V, VOUT > VIT 0.03 Thermal shutdown temperature Shutdown, temperature increasing Reset, temperature decreasing +165 +140 TSD %VOUT 0.3 V 1 mA °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 13. Adjustable devices tested at 0.8 V; external resistor tolerance is not taken into account. 14. Dropout is defined as the voltage from the input to VOUT when VOUT is 2% below nominal. www.onsemi.com 7 NCP59744 TYPICAL CHARACTERISTICS 0.20 0.5 0.15 0.4 0.10 −40°C +125°C 0.05 0 CHANGE IN VOUT (%) CHANGE IN VOUT (%) At TJ = +25°C, VOUT = 1.5 V, VIN = VOUT(TYP) + 0.3 V, VBIAS = 3.3 V, IOUT = 50 mA, VEN = VIN, CIN = 1 mF, CBIAS = 1 mF, CSS = 0.01 mF, and COUT = 10 mF, unless otherwise noted. +25°C −0.05 −0.10 −0.15 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 4.5 0 −0.1 −0.3 1.5 2.0 2.5 3.0 3.5 Figure 4. VIN Line Regulation Figure 5. VBIAS Line Regulation 0.3 0.2 CHANGE IN VOUT (%) 0.4 +125°C 0.1 +25°C 0 −0.1 −0.2 −0.3 −40°C 10 20 30 40 50 +125°C 0.1 +25°C 0 −0.1 −0.2 −0.3 −40°C 0 0.5 1.0 1.5 2.0 2.5 IOUT, OUTPUT CURRENT (mA) IOUT, OUTPUT CURRENT (A) Figure 6. Load Regulation Figure 7. Load Regulation +125°C 120 100 +25°C 80 60 −40°C 40 20 1.0 1.5 2.0 3.0 2.5 3.0 500 450 IOUT = 3 A 400 350 300 250 200 +25°C 150 +125°C 100 50 0 −40°C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 IOUT, OUTPUT CURRENT (A) VBIAS − VOUT (V) Figure 8. VIN Dropout Voltage vs. IOUT and Temperature TJ Figure 9. VIN Dropout Voltage vs. (VBIAS − VOUT) and Temperature TJ www.onsemi.com 8 4.0 0.2 −0.4 −0.5 140 0.5 1.0 VBIAS − VOUT (V) 0.3 0 0.5 VIN − VOUT (V) 0.4 0 +25°C −0.2 0.5 0 +125°C −40°C 0.1 0.5 −0.4 −0.5 VDO (VIN − VOUT) DROPOUT VOLTAGE (mV) 0 0.2 −0.4 −0.5 VDO (VIN − VOUT) DROPOUT VOLTAGE (mV) CHANGE IN VOUT (%) −0.20 0.3 4.5 NCP59744 TYPICAL CHARACTERISTICS VDO (VBIAS − VOUT) DROPOUT VOLTAGE (mV) VDO (VIN − VOUT) DROPOUT VOLTAGE (mV) At TJ = +25°C, VOUT = 1.5 V, VIN = VOUT(TYP) + 0.3 V, VBIAS = 3.3 V, IOUT = 50 mA, VEN = VIN, CIN = 1 mF, CBIAS = 1 mF, CSS = 0.01 mF, and COUT = 10 mF, unless otherwise noted. 1400 200 180 1300 IOUT = 1.5 A 160 1200 140 120 +25°C 1000 100 80 +125°C 60 +25°C 40 −40°C 20 0 −40°C 1100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VBIAS − VOUT (V) +125°C 900 800 700 600 0 2000 1800 1800 −40°C 1000 800 1200 −40°C 800 600 400 400 200 200 0 0 0.5 1.5 1.0 2.0 2.5 3.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 IOUT, OUTPUT CURRENT (A) VBIAS (V) Figure 12. BIAS Pin Current vs. IOUT and Temperature TJ Figure 13. BIAS Pin Current vs. VBIAS and Temperature TJ 5.5 1.0 VPG,LO, L−LEVEL PG VOLTAGE (V) 0.500 0.475 0.450 ISS (mA) 3.0 +125°C 1000 600 0 2.5 +25°C 1400 IBIAS (mA) 1200 IBIAS (mA) 1600 +25°C +125°C 2.0 Figure 11. VBIAS Dropout Voltage vs. IOUT and Temperature TJ 2000 1400 1.5 1.0 IOUT, OUTPUT CURRENT (A) Figure 10. VIN Dropout Voltage vs. (VBIAS − VOUT) and Temperature TJ 1600 0.5 0.425 0.400 0.375 0.350 0.325 0.300 −50 −25 0 25 50 75 100 125 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 TJ, JUNCTION TEMPERATURE (°C) IPG, PG PIN CURRENT (mA) Figure 14. Soft Start Charging Current ISS vs. Temperature TJ Figure 15. L−level PG Voltage vs. Current www.onsemi.com 9 12 NCP59744 TYPICAL CHARACTERISTICS At TJ = +25°C, VOUT = 1.5 V, VIN = VOUT(TYP) + 0.3 V, VBIAS = 3.3 V, IOUT = 50 mA, VEN = VIN, CIN = 1 mF, CBIAS = 1 mF, CSS = 0.01 mF, and COUT = 10 mF, unless otherwise noted. ICL, CURRENT LIMIT (A) 6.0 +25°C −40°C 5.0 +125°C 4.0 3.0 2.0 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Figure 16. Current Limit vs. (VBIAS − VOUT) Figure 17. Start by Enable at CSS = 0 Figure 18. Start by Enable at CSS = 1 nF Figure 19. Start by Enable at CSS = 10 nF 700 VIN = 1.3 V VBIAS = 5 V VOUTNOM = 0.8 V ILOAD = 1500 mA CBIAS = 1 mF CIN = COUT = 10 mF 600 500 NOISE SPECTRAL DENSITY (nV/√Hz) NOISE SPECTRAL DENSITY (nV/√Hz) VBIAS − VOUT (V) Resistive load 400 300 Css=0 200 100 0 Css=1nF Css=10nF 10 100 1,000 10,000 100,000 106 1,200 VIN = 2.0 V VBIAS = 5 V VOUTNOM = 1.5 V ILOAD = 1500 mA CBIAS = 1 mF CIN = COUT = 10 mF 1,000 800 Resistive load 600 Css=0 400 Css=1nF 200 0 Css=10nF 10 100 1,000 10,000 100,000 FREQUENCY (Hz) FREQUENCY (Hz) Figure 20. Output Voltage Noise Spectral Density at VOUT = 0.8 V Figure 21. Output Voltage Noise Spectral Density at VOUT = 1.5 V www.onsemi.com 10 106 NCP59744 TYPICAL CHARACTERISTICS 2,400 90 VIN = 3.5 V VBIAS = 5 V VOUTNOM = 3.0 V ILOAD = 1500 mA CBIAS = 1 mF CIN = COUT = 10 mF 2,000 1,600 80 70 Resistive load PSRR (dB) NOISE SPECTRAL DENSITY (nV/√Hz) At TJ = +25°C, VOUT = 1.5 V, VIN = VOUT(TYP) + 0.3 V, VBIAS = 3.3 V, IOUT = 50 mA, VEN = VIN, CIN = 1 mF, CBIAS = 1 mF, CSS = 0.01 mF, and COUT = 10 mF, unless otherwise noted. 1,200 Css=0 800 Css=1nF 400 0 10 50 40 30 20 Css=10nF 100 60 10 1,000 10,000 100,000 106 0 10 FREQUENCY (Hz) 80 PSRR (dB) 70 60 50 40 20 10 0 10 100 1,000 10,000 1,000 10,000 Figure 23. VBIAS PSRR 90 VIN = 1.8 V + 100 mVpp Modulation VOUTNOM = 1.5 V VBIAS = 5 V CBIAS = 4.7 mF COUT = 10 mF CSS = 1 nF 100 FREQUENCY (Hz) Figure 22. Output Voltage Noise Spectral Density at VOUT = 3.0 V 30 VBIAS = 5 V + 100 mVpp Modulation VIN = 1.8 V VOUTNOM = 1.5 V CIN = 10 mF COUT = 10 mF IOUT = 100 mA IOUT = 500 mA IOUT = 1.5 A 100,000 106 FREQUENCY (Hz) Figure 24. VIN PSRR www.onsemi.com 11 IOUT = 100 mA IOUT = 500 mA IOUT = 1.5 A 100,000 106 NCP59744 APPLICATIONS INFORMATION greater. In order to avoid any excessive input voltage transients caused i.e. by a sudden output short circuit conditions the input capacitor value should be sized properly for each particular application to counteract any input inductance. For Vin of 5.5 V the recommended input capacitance is 22 mF or greater. Ceramic or other low ESR capacitors are recommended. For the best performance all capacitors should be connected to the NCP59744 respective pins directly in the device PCB copper layer, not through vias having not negligible impedance. The NCP59744 dual−rail very low dropout voltage regulator is using NMOS pass transistor for output voltage regulation from VIN voltage. All the low current internal controll circuitry is powered from the VBIAS voltage. The use of an NMOS pass transistor offers several advantages in applications. Unlike a PMOS topology devices, the output capacitor has reduced impact on loop stability. Vin to Vout operating voltage difference can be very low compared with standard PMOS regulators in very low Vin applications. The NCP59744 offers programmable smooth monotonic start-up. The controlled voltage rising limits the inrush current what is advantageous in applications with large capacitive loads. The Voltage Controlled Soft Start timing is programmable by external Css capacitor value. The Enable (EN) input is equipped with internal hysteresis and deglitch filter. Open Drain type Power Good (PG) output is available for Vout monitoring and sequencing of other devices. NCP59744 is a Adjustable linear regulator. The required Output voltage can be adjusted by two external resistors. Typical application schematics is shown in Figure 25. Enable Operation The enable pin will turn the regulator on or off. The threshold limits are covered in the electrical characteristics table in this data sheet. If the enable function is not to be used then the pin should be connected to VIN or VBIAS. To get the full functionality of Soft−Start, it is recommended to turn on the VIN and VBIAS supply voltages first and activate the Enable pin no sooner than when VIN and VBIAS are on their nominal levels. The NCP59744 device is equipped with Output Active Discharge transistor that is pulling the output to GND through a 1.2 kW (typ.) resistor when the device is disabled. NCP59744 Output Noise When the NCP59744 device reaches the end of the Soft−Start cycle, the Soft Start capacitor is switched to serve as a Noise filtering capacitor. Output Voltage Adjust V OUT + 0.8 The output voltage can be adjusted from 0.8 V to 3.6 V using resistors divider between the output and the FB input. Recommended resistor values for frequently used voltages can be found in the Table 8. ǒ1 ) R 1ńR 2Ǔ Figure 25. Typical Application Schematics Programmable Soft−Start Dropout Voltage The Soft-Start ramp time depends on the Soft Start charging current ISS, Soft-Start capacitor value CSS and internal reference voltage VREF. The Soft –Start time can be calculated using following equations: tss = CSS x (VREF / ISS) [s, F,V,A] or in more practical units tSS = CSS x 0.8V / 0.45 = CSS x 1.78 where tss = Soft−Start time in miliseconds CSS = Soft−Start capacitor value in nano Farads Capacitor values for frequently used Soft-Start times can be found in the Table 9. The maximal recommended value of CSS capacitor is 15 nF. For higher CSS values the capacitor full discharging before new Soft-Start cycle is not guaranteed. Because of two power supply inputs VIN and VBIAS and one VOUT regulator output, there are two Dropout voltages specified. The first, the VIN Dropout voltage is the voltage difference (VIN – VOUT) when VOUT starts to decrease by percents specified in the Electrical Characteristics table. VBIAS is high enough, specific value is published in the Electrical Characteristics table. The second, VBIAS dropout voltage is the voltage difference (VBIAS – VOUT) when VIN and VBIAS pins are joined together and VOUT starts to decrease. Input and Output Capacitors The device is designed to be stable for all available types and values of output capacitors ≥ 2.2 mF. The device is also stable with multiple capacitors in parallel, which can be of any type or value. In applications where no low input supply impedance is available (PCB inductance in Vin and/or Vbias inputs as an example) the recommended Cin and Cbias value is 1 mF or www.onsemi.com 12 NCP59744 Power Good Table 8. RESISTOR VALUES FOR PROGRAMMING THE OUTPUT VOLTAGE Power−Good (PG) is an open−drain, active−high output that indicates the status of VOUT. When VOUT exceeds the PG trip threshold, the PG pin goes into a high−impedance state. When VOUT is below this threshold the pin is driven to a low−impedance state. A pull−up resistor from 10 kW to 1 MW should be connected from this pin to a supply up to 5.5 V. The supply can be higher than the input voltage. Alternatively, the PG pin can be left floating if output monitoring is not necessary. VOUT (V) R1 (kW) R2 (kW) 0.8 Short Open 0.9 0.619 4.99 1.0 1.13 4.53 1.05 1.37 4.33 1.1 1.87 4.99 1.2 2.49 4.99 The internal Current Limitation circuitry allows the device to supply the full nominal current and surges but protects the device against Current Overload or Short. 1.5 4.12 4.75 1.8 3.57 2.87 2.5 3.57 1.69 Thermal Protection 3.3 3.57 1.15 Current Limitation Internal thermal shutdown (TSD) circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. When TSD activated , the regulator output turns off. When cooling down under the low temperature threshold, device output is activated again. This TSD feature is provided to prevent failures from accidental overheating. NOTE: VOUT = 0.8 x (1 + R1/R2) Resistors in the table are standard 1% types Table 9. CAPACITOR VALUES FOR PROGRAMMING THE SOFT−START TIME Soft−Start Time CSS 0.2 ms Open 0.5 ms 270 pF 1 ms 560 pF 5 ms 2.7 nF 10 ms 5.6 nF 18 ms 10 nF Table 10. ORDERING INFORMATION Output Current Output Voltage Junction Temp. Range NCP59744MN1ADJTBG 3.0 A ADJ NCP59744MN2ADJTBG 3.0 A NCP59744FCTCADJT2G 3.0 A Device Package Shipping† −40°C to +125°C DFN10 (Pb−Free) 3000 / Tape & Reel ADJ −40°C to +125°C QFN20 (Pb−Free) 3000 / Tape & Reel ADJ −40°C to +125°C WLCSP10 (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 13 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN10, 3x3, 0.5P CASE 485C ISSUE F SCALE 2:1 DATE 16 DEC 2021 GENERIC MARKING DIAGRAM* XXXXX XXXXX ALYWG G XXXXX = Specific Device Code A = Assembly Location L = Wafer Lot *This information is generic. Please refer to Y = Year device data sheet for actual part marking. W = Work Week Pb−Free indicator, “G” or microdot “G”, may G = Pb−Free Package or may not be present. Some products may (Note: Microdot may be in either location) not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON03161D Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFN10, 3X3 MM, 0.5 MM PITCH PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS QFN20 5x5, 0.65P CASE 485DB ISSUE O 1 20 SCALE 2:1 PIN ONE REFERENCE ÉÉ ÉÉ A B D L L1 E DETAIL A ALTERNATE TERMINAL CONSTRUCTIONS 0.15 C 0.15 C L NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. OPTIONAL FEATURES. DIM A A1 A3 b D D2 E E2 e L L1 TOP VIEW A (A3) DETAIL B 0.10 C DATE 02 APR 2013 DETAIL B 0.08 C A1 NOTE 5 NOTE 4 ALTERNATE CONSTRUCTION C SIDE VIEW 0.10 DETAIL A 6 D2 SEATING PLANE GENERIC MARKING DIAGRAM* C A B 20X L M 1 0.10 M XXXXXXXX XXXXXXXX AWLYYWWG G C A B 11 E2 1 16 20X e BOTTOM VIEW b 0.10 M C A B 0.05 M C XXXXX A WL YY WW G NOTE 3 PACKAGE OUTLINE *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 20X 0.78 3.30 = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) RECOMMENDED SOLDERING FOOTPRINT* 5.30 3.30 MILLIMETERS MIN MAX 0.80 1.00 −−− 0.05 0.20 REF 0.25 0.35 5.00 BSC 3.05 3.25 5.00 BSC 3.05 3.25 0.65 BSC 0.45 0.65 −−− 0.15 5.30 20X 0.65 PITCH 0.40 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON88183E QFN20 5x5, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WLCSP10, 2.075x1.025x0.35 CASE 567ZC ISSUE O GENERIC MARKING DIAGRAM* XXXXX ALYWW DOCUMENT NUMBER: DESCRIPTION: 98AON19872H XXXX A L Y WW = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week DATE 29 APR 2020 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. WLCSP10, 2.075x1.025x0.35 PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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      NCP59744MN2ADJTBG
      •  国内价格 香港价格
      • 1+15.679971+2.02636
      • 10+11.5251610+1.48942
      • 25+10.4784525+1.35416
      • 100+9.32310100+1.20485
      • 250+8.77307250+1.13377
      • 500+8.44129500+1.09089
      • 1000+8.400651000+1.08564

      库存:6628

      NCP59744MN2ADJTBG
      •  国内价格
      • 1+13.34880
      • 10+11.46960
      • 30+10.29240
      • 100+9.08280
      • 500+8.54280
      • 1000+8.30520

      库存:2726