NCP623DM-30R2G

NCP623 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control The NCP623 low dropout linear regulator can deliver up to 150 mA of output current with a typical dropout voltage of 180 mV. This low dropout feature helps to maintain a regulated output voltage for a longer period of time as the lifetime of the battery decreases. It is the ideal choice for noise sensitive environments like portable applications where noise performance and space are at a premium. The typical output noise voltage specification is 25 mVRMS. The space saving package choices include a Micro8™ or DFN6. An additional noise saving feature of this device is its ability to filter choppy signals on the power supply by providing a typical DC ripple rejection of −90 dB and −70 dB at 1.0 kHz. The NCP623 is designed to work with very low ESR capacitors such as ceramic capacitors which are common in the industry now. Additional features such as thermal shutdown and short−circuit protection provide for a robust system design. Features http://onsemi.com MARKING DIAGRAMS 8 Micro8 DM SUFFIX CASE 846A 1 DFN6, 3X3 MN SUFFIX CASE 488AE NCP6 23yy ALYW G G Lxx AYW G G 1 • Very Low Quiescent Current 170 mA (ON, no load), 100 nA (OFF, no load) • Very Low Dropout Voltage, Typical Value is 137 mV at an Output • Very Low Noise with External Bypass Capacitor (10 nF), • • • • • • • • • Current of 100 mA Typically 25 mVRMS over 100 Hz to 100 kHz Internal Thermal Shutdown Extremely Tight Line Regulation Typically −90 dB Ripple Rejection −70 dB @ 1.0 kHz Line Transient Response: 1.0 mV for DVin = 3.0 V Extremely Tight Load Regulation, Typically 20 mV at DIout = 150 mA Multiple Output Voltages Available Logic Level ON/OFF Control (TTL−CMOS Compatible) Output Capacitor ESR Can Vary from 0 W to 3.0 W Pb−Free Packages are Available ON/OFF Applications Telephones, Radio Control Systems, Toys and Low Voltage Systems VIN 1 2 3 6 5 4 GND VOUT DFN6 (Top View) ORDERING INFORMATION See detailed ordering and shipping information on page 14 of this data sheet. © Semiconductor Components Industries, LLC, 2006 September, 2006 − Rev. 7 1 Publication Order Number: NCP623/D ÇÇ ÇÇ ÇÇ Ç Ç Ç • All Portable Systems, Battery Powered Systems, Cellular Ç Ç Ç 1 = Device Code (Micro8) xx = See Ordering Information NCP623yy = Device Code (DFN6) yy = 25, 28, 30, 33, 40, or 50 A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb Free Package (Note: Microdot may be in either location) Lxx PIN CONNECTIONS Bypass NC NC 1 2 3 4 Micro8 (Top View) 8 7 6 5 VOUT GND GND VIN ON/OFF GND Bypass NCP623 VIN On/Off ON/OFF Thermal Shutdown Bypass Band Gap Reference * Current Limit * Antisaturation * Protection VOUT GND GND Figure 1. NCP623 Block Diagram MAXIMUM RATINGS Rating Power Supply Voltage Power Dissipation and Thermal Resistance Maximum Power Dissipation Case 488AE (DFN6, 3x3) MN Suffix Thermal Resistance, Junction−to−Air Thermal Resistance, Junction−to−Case Case 846A (Micro8) DM Suffix Thermal Resistance, Junction−to−Air Thermal Resistance, Junction−to−Case Operating Ambient Temperature Range Maximum Junction Temperature Storage Temperature Range ESD Protection − Human Body Model − Machine Model Symbol Vin PD RqJA **psi−JC* or YJC RqJA RqJC TA TJmax Tstg VESD Value 12 Internally Limited 161 13 240 105 −40 to +85 150 −60 to +150 2000 200 °C °C °C V Unit V W °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *“C’’ (“case’’) is defined as the solder−attach interface between the center of the exposed pad on the bottom of the package, and the board to which it is attached. ** Refer to the JEDEC Specs (51−2, 51−6). http://onsemi.com 2 NCP623 ELECTRICAL CHARACTERISTICS (For typical values TA = 25°C, for min/max values TA = −40°C to +85°C, Max TJ = 150°C) Characteristics CONTROL ELECTRICAL CHARACTERISTICS Input Voltage Range ON/OFF Input Current (All versions) VON/OFF = 2.4 V ON/OFF Input Voltages (All versions) Logic “0”, i.e. OFF State Logic “1”, i.e. ON State CURRENTS PARAMETERS Current Consumption in OFF State (All versions) OFF Mode Current: VIN = Vout +1.0 V, Iout = 0 mA Current Consumption in ON State (All versions) ON Mode Sat Current: Vin = Vout + 1.0 V, Iout = 0 mA Current Consumption in Saturation ON State (All versions) ON Mode Sat Current: VIN = 2.5 V or Vin = Vout − 0.4 V (Whichever is Higher), Iout = 0 mA Current Limit Vin = Vout + 1.0 V, (All versions) Output Short−circuited (Note 1) Vin = Vout + 1.0 V, TA = 25°C, 1.0 mA < Iout < 150 mA 2.5 Suffix 2.8 Suffix 3.0 Suffix 3.3 Suffix 4.0 Suffix 5.0 Suffix Vin = Vout + 1.0 V, −40°C < TA < 85°C 2.5 Suffix 2.8 Suffix 3.0 Suffix 3.3 Suffix 4.0 Suffix 5.0 Suffix LINE AND LOAD REGULATION, DROPOUT VOLTAGES Line Regulation (All versions) Vout + 1.0 V < Vin < 12 V, Iout = 60 mA Load Regulation (All versions) Iout = 1.0 to 60 mA Iout = 1.0 to 100 mA Iout = 1.0 to 150 mA Dropout Voltage (All versions) Iout = 10 mA Iout = 100 mA Iout = 150 mA Vin − Vout mV − − − 30 137 180 90 230 260 Vin = Vout + 1.0 V Regline Regload mV − − − − 2.0 8.0 15 20 10 mV 25 35 45 IQOFF IQON IQSAT IMAX Vout − − − 175 2.45 2.74 2.94 3.23 3.92 4.90 2.41 2.70 2.89 3.18 3.86 4.83 0.1 170 900 210 2.5 2.8 3.0 3.3 4.0 5.0 2.5 2.8 3.0 3.3 4.0 5.0 2.0 200 1400 − V 2.55 2.86 3.06 3.37 4.08 5.1 V 2.59 2.90 3.11 3.42 4.14 5.17 mA mA mA mA VON/OFF ION/OFF VON/OFF 2.5 − − 2.2 − 2.5 − − Vin − 0.3 − V mA V Symbol Min Typ Max Unit Vout http://onsemi.com 3 NCP623 ELECTRICAL CHARACTERISTICS (For typical values TA = 25°C, for min/max values TA = −40°C to +85°C, Max TJ = 150°C) Characteristics DYNAMIC PARAMETERS Ripple Rejection (All versions) Vin = Vout + 1.0 V, Vpp = 1.0 V, f = 1.0 kHz, Iout = 60 mA Line Transient Response Vin = Vout + 1.0 V to Vout + 4.0 V, Iout = 60 mA, d(Vin)/dt = 15 mV/ms Output Noise Voltage (All versions) Cout = 1.0 mF, Iout = 60 mA, f = 100 Hz to 100 kHz Cbypass = 10 nF Cbypass = 1.0 nF Cbypass = 0 nF Output Noise Density Cout = 1.0 mF, Iout = 60 mA, f = 1.0 kHz Output Rise Time (All versions) Cout = 1.0 mF, Iout = 30 mA, VON/OFF = 0 to 2.4 V 1% of ON/OFF Signal to 99% of Nominal Output Voltage Without Bypass Capacitor With Cbypass = 10 nF THERMAL SHUTDOWN Thermal Shutdown (All versions) − 150 − °C 1. Iout (Output Current) is the measured current when the output voltage drops below 0.3 V with respect to Vout at Iout = 30 mA. VN tr − − 40 1.1 − − ms ms − 230 − nV/ √Hz VRMS − − − 25 40 65 − − − dB 60 − 70 1.0 − mV − mVrms Symbol Min Typ Max Unit http://onsemi.com 4 NCP623 DEFINITIONS Load Regulation − The change in output voltage for a change in load current at constant chip temperature. Dropout Voltage − The input/output differential at which the regulator output no longer maintains regulation against further reductions in input voltage. Measured when the output drops 100 mV below its nominal value (which is measured at 1.0 V differential), dropout voltage is affected by junction temperature, load current and minimum input supply requirements. Output Noise Voltage − The RMS AC voltage at the output with a constant load and no input ripple, measured over a specified frequency range. Maximum Power Dissipation − The maximum total dissipation for which the regulator will operate within specifications. Quiescent Current − Current which is used to operate the regulator chip and is not delivered to the load. Line Regulation − The change in input voltage for a change in the input voltage. The measurement is made under conditions of low dissipation or by using pulse techniques such that the average chip temperature is not significantly affected. Line Transient Response − Typical over− and undershoot response when input voltage is excited with a given slope. Thermal Protection − Internal thermal shutdown circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. When activated, typically 150°C, the regulator turns off. This feature is provided to prevent catastrophic failures from accidental overheating. Maximum Package Power Dissipation − The maximum package power dissipation is the power dissipation level at which the junction temperature reaches its maximum value i.e. 125°C. The junction temperature is rising while the difference between the input power (VCC X ICC) and the output power (Vout X Iout) is increasing. Depending on ambient temperature, it is possible to calculate the maximum power dissipation, maximum load current or maximum input voltage (see Application Hints: Protection). The maximum power dissipation supported by the device is a lot increased when using appropriate application design. Mounting pad configuration on the PCB, the board material and also the ambient temperature are affected the rate of temperature rise. It means that when the IC has good thermal conductivity through PCB, the junction temperature will be “low” even if the power dissipation is great. The thermal resistance of the whole circuit can be evaluated by deliberately activating the thermal shutdown of the circuit (by increasing the output current or raising the input voltage for example). Then you can calculate the power dissipation by subtracting the output power from the input power. All variables are then well known: power dissipation, thermal shutdown temperature (150°C for NCP623) and ambient temperature. http://onsemi.com 5 NCP623 APPLICATION HINTS Input Decoupling − As with any regulator, it is necessary to reduce the dynamic impedance of the supply rail that feeds the component. A 1.0 mF capacitor either ceramic or tantalum is recommended and should be connected close to the NCP623 package. Higher values will correspondingly improve the overall line transient response. Output Decoupling − Output capacitors exhibiting ESRs ranging from a few mW up to 3.0 W can safely be used. The minimum decoupling value is 1.0 mF and can be augmented to fulfill stringent load transient requirements. The regulator works with ceramic chip capacitors as well as tantalum devices. Noise Performances − Unlike other LDOs, the NCP623 is a true low−noise regulator. With a 10 nF bypass capacitor, it typically reaches 25 mVRMS overall noise between 100 Hz and 100 kHz. Spectral density graphics as well as noise dependency versus bypass capacitor information is included in this datasheet. The bypass capacitor impacts the startup phase of the NCP623 as depicted by the data−sheet curves. A typical 1.0 ms settling time is achieved with a 10 nF bypass capacitor. However, due to its low−noise architecture, the NCP623 can operate without bypass and thus offers a typical 20 ms startup phase. In that case, the typical output noise stays lower than 65 mVRMS between 100 Hz − 100 kHz. Protections − The NCP623 includes several protections functions. The output current is internally limited to a minimum of 175 mA while temperature shutdown occurs if the die heats up beyond 150°C. These value lets you assess the maximum differential voltage the device can sustain at a given output current before its protections come into play. The maximum dissipation the package can handle is given by: T –T A P max + Jmax R qJA If a 150 mA output current is needed, the ground current is extracted from the data−sheet curves: 6.5 mA @ 150 mA. For a NCP623NW28R2 (2.8 V), the maximum input voltage will then be 6.48 V, a rather comfortable margin. Typical Application − The following figure portraits the typical application for the NCP623 where both input/output decoupling capacitors appear. On/Off 6 C3 1.0 mF 1 5 4 C1 10 nF NCP623 C2 1.0 mF 3 2 Input Output Figure 2. A Typical NCP623 Application with Recommended Capacitor Values (DFN6) Output Input 8 C2 1.0 mF 1 C1 10 nF 7 6 5 C3 1.0 mF 4 On/Off NCP623 If TJmax is internally limited to 150°C, then the NCP623 can dissipate up to 595 mW @ 25°C. The power dissipated by the NCP623 can be calculated from the following formula: Ptot + V @ I (I ) ) V * Vout @ I out in gnd out in 2 3 NC NC or Vin max + Ptot ) Vout @ I out I ) I out gnd Figure 3. A Typical NCP623 Application with Recommended Capacitor Values (Micro8) http://onsemi.com 6 NCP623 NCP623 Wake−up Improvement − In portable applications, an immediate response to an enable signal is vital. If noise is not a concern, the NCP623 without a bypass capacitor settles in nearly 20 ms and typically delivers 65 mVRMS between 100 Hz and 100 kHz. In ultra low−noise systems, the designer needs a 10 nF bypass capacitor to decrease the noise down to 25 mVRMS between 100 Hz and 100 kHz. With the addition of the 10 nF capacitor, the wake−up time expands up to 1.0 ms as shown on the data−sheet curves. If an immediate response is wanted, Figure 5 provides a solution to charge the bypass capacitor with the enable signal without degrading the noise response of the NCP623. At power−on, C4 is discharged. When the control logic sends its wake−up signal by going high, the PNP base is momentarily tied to ground. The PNP switch closes and immediately charges the bypass capacitor C1 toward its operating value. After a few ms, the PNP opens and becomes totally transparent to the regulator. This circuit improves the response time of the regulator which drops from 1.0 ms down to 30 ms. The value of C4 needs to be tweaked in order to avoid any bypass capacitor overload during the wake−up transient. C4 470 pF MMBT2902LT1 Q1 C1 10 nF Output Input 8 R2 220 k On/Off C2 1.0 mF 1 7 6 5 C3 1.0 mF + 6 5 4 C2 + 1.0 mF 3 NCP623 2 3 4 On/Off R2 220 k + + C3 1.0 mF 1 NCP623 2 C1 10 nF MMBT2902LT1 Q1 C4 470 pF Input Output Figure 4. A PNP Transistor Drives the Bypass Pin when Enable Goes High (DFN6) Figure 5. A PNP Transistor Drives the Bypass Pin when Enable Goes High (Micro8) http://onsemi.com 7 NCP623 NCP623 Without Wake−up Improvement (Typical Response) 1 ms NCP623 With Wake−up Improvement (Typical Response) 30 ms Figure 6. NCP623 Wake−up Improvement with Small PNP Transistor The PNP connected to the bypass pin does not degrade the noise response of the NCP623. Figure 7 displays the noise 350 300 nV/sqrt (Hz) 250 200 150 100 50 0 Cbyp = 10 nF density using the setup in Figure 5. The typical noise level is 26 mVRM (100 Hz to 25 kHz) at IOUT = 60 mA. Vin = 3.8 V Vout = 2.8 V Co = 1.0 mF Iout = 60 mA Tamb = 25°C Output Noise = 26 mVrms C = 10 nF @ 100 Hz − 100 kHz 100 1,000 10,000 Frequency (Hz) 100,000 1,000,000 Figure 7. Noise Density of the NCP623 with a 10 nF Bypass Capacitor and a Wake−up Improvement Network http://onsemi.com 8 NCP623 TYPICAL PERFORMANCE CHARACTERISTICS 350 300 250 nV/Hz 200 150 100 50 Vn = 65 mVrms @ Cbypass = 0 Vn = 30 mVrms @ Cbypass = 3.3 nF Vn = 25 mVrms @ Cbypass = 10 nF 0 over 100 Hz to 100 kHz 100 1000 10,000 100,000 FREQUENCY (Hz) Cbyp = 10 nF 3.3 nF 0 nF 70 60 RMS NOISE (mA) 50 40 30 20 10 0 1,000,000 0 Vin = 3.8 V Vout = 2.8 V CO = 1.0 mF Iout = 60 mA Tamb = 25°C 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 BYPASS CAPACITOR (nF) 9.0 10 Vin = 3.8 V Vout = 2.8 V CO = 1.0 mF Iout = 60 mA Tamb = 23°C Figure 8. Noise Density versus Bypass Capacitor Figure 9. RMS Noise versus Bypass Capacitor (100 Hz − 100 kHz) 2.805 2.800 OUTPUT VOLTAGE (V) 2.795 2.790 2.785 2.780 2.775 2.770 −40 −20 0 20 40 60 80 100 60 mA 100 mA 150 mA 1 mA 2.860 2.840 OUTPUT VOLTAGE (V) 2.820 2.800 2.780 85°C 2.760 2.740 0 20 40 60 80 100 120 140 160 25°C −40°C TEMPERATURE (°C) OUTPUT CURRENT (mA) Figure 10. Output Voltage (2.8 V) versus Temperature 3.015 3.010 OUTPUT VOLTAGE (V) 3.000 2.995 2.990 2.985 2.980 2.975 2.970 2.965 −40 2.94 −20 0 20 40 60 80 100 0 150 mA 100 mA 60 mA OUTPUT VOLTAGE (V) 3.005 1 mA 3.06 3.04 3.02 3.00 2.98 2.96 Figure 11. Output Voltage (2.8 V) versus Iout 25°C −40°C 85°C 20 40 60 80 100 120 140 160 TEMPERATURE (°C) TEMPERATURE (°C) Figure 12. Output Voltage (3.0 V) versus Temperature Figure 13. Output Voltage (3.0 V) versus Iout http://onsemi.com 9 NCP623 TYPICAL PERFORMANCE CHARACTERISTICS 250 200 DROPOUT (mV) 85°C 150 100 50 0 25°C −40°C DROPOUT (mV) 150 100 50 0 −40 60 mA 250 200 150 mA 100 mA 10 mA 10 60 IO (mA) 100 150 −20 0 20 40 60 80 100 TEMPERATURE (°C) Figure 14. Dropout Voltage versus Iout Figure 15. Dropout Voltage versus Temperature 7.0 GROUND CURRENT (mA) 6.0 5.0 4.0 3.0 2.0 1.0 0 0 20 40 60 80 100 120 140 160 180 200 Vin = 3.8 V Vout = 2.8 V CO = 1.0 mF Tamb = 25°C GROUND CURRENT (mA) 2.1 2.05 2.0 1.95 1.9 1.85 1.8 −40 −20 0 20 40 60 80 Vin = 3.8 V Vout = 2.8 V CO = 1.0 mF Iout = 60 mA OUTPUT CURRENT (mA) AMBIENT TEMPERATURE (°C) Figure 16. Ground Current versus Output Current Figure 17. Ground Current versus Ambient Temperature QUIESCENT CURRENT ON MODE (mA) 200 190 180 170 160 150 140 130 120 110 100 −40 −20 0 20 40 60 80 100 TEMPERATURE (°C) Figure 18. Quiescent Current versus Temperature http://onsemi.com 10 NCP623 TYPICAL PERFORMANCE CHARACTERISTICS 1200 SETTLINE TIME (mA) 1000 800 600 400 200 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 Vin = 3.8 V Vout = 2.8 V CO = 1.0 mF Iout = 60 mA Tamb = 25°C 200 ms/div 500 mV/div Cbyp = 10 nF Vin = 3.8 V Vout = 2.8 V Cout = 1.0 mF Iout = 50 mA Tamb = 25°C BYPASS CAPACITOR (nF) Figure 19. Output Voltage Settling Time versus Bypass Capacitor Figure 20. Output Voltage Settling Shape Cbypass = 10 nF 100 ms/div 500 mV/div Cbyp = 3.3 nF Vin = 3.8 V Vout = 2.8 V Cout = 1.0 mF Iout = 50 mA Tamb = 25°C 10 ms/div 500 mV/div Cbyp = 0 nF Vin = 3.8 V Vout = 2.8 V Cout = 1.0 mF Iout = 50 mA Tamb = 25°C Figure 21. Output Voltage Settling Shape Cbypass = 3.3 nF Figure 22. Output Voltage Settling Shape without Bypass Capacitor http://onsemi.com 11 NCP623 TYPICAL PERFORMANCE CHARACTERISTICS Y1 Vin = 3.8 to 7.0 V Y1 = 1.0 mV/div Y2 = 1.0 V/div X = 1.0 ms Iout = 60 mA Tamb = 25°C dVin = 3.2 V Y2 Figure 23. Line Transient Response Y1 Y2 Vin = 3.8 V Y1 = 100 mV/div Y2 = 20 mV/div X = 200 ms/div Tamb = 25°C Y1 Vin = 3.8 V Y1 = 50 mA/div Y2 = 20 mV/div X = 20 ms Tamb = 25°C Y2 Y1: OUTPUT CURRENT, Y2: OUTPUT VOLTAGE Y1: OUTPUT CURRENT, Y2: OUTPUT VOLTAGE Figure 24. Iout = 3.0 mA to 150 mA Figure 25. ISlope = 100 mA/ms (Large Scale) Iout = 3.0 mA to 150 mA Y1 Y1 Vin = 3.8 V Y1 = 50 mA/div Y2 = 20 mV/div X = 100 ms Tamb = 25°C Y2 Vin = 3.8 V Y1 = 50 mA/div Y2 = 20 mV/div X = 200 ms Tamb = 25°C Y2 Y1: OUTPUT CURRENT, Y2: OUTPUT VOLTAGE Y1: OUTPUT CURRENT, Y2: OUTPUT VOLTAGE Figure 26. ISlope = 6.0 mA/ms (Large Scale) Iout = 3.0 mA to 150 mA Figure 27. ISlope = 2.0 mA/ms (Large Scale) Iout = 3.0 mA to 150 mA http://onsemi.com 12 NCP623 100 UNSTABLE OUTPUT CAPACITOR ESR 10 25°C STABLE 85°C −40°C OUTPUT CAPACITOR ESR 1000 100 150 mF 10 UNSTABLE 1.0 mF 1.0 0.10 Cout = 1.0 mF Vout = 3.0 V 0 10 20 30 40 50 60 70 80 90 100110 120130140150 OUTPUT CURRENT (mA) 0.1 mF STABLE 0.01 1.0 0 10 20 30 40 50 60 70 80 90 100110 120130140150 OUTPUT CURRENT (mA) Figure 28. Output Stability versus Output Current Over Temperature (1.0 mF, 3.0 V) 100 UNSTABLE OUTPUT CAPACITOR ESR 10 85°C −40°C 0 −10 −20 −30 −40 (dB) −50 −60 0.1 Cout = 150 mF Vout = 3.0 V 0 10 20 30 40 50 60 70 80 90 100110 120130140150 OUTPUT CURRENT (mA) −70 −80 −90 −100 Figure 29. Output Stability with Output Capacitor Change 25°C STABLE Vin = 3.8 V Vout = 2.8 V CO = 1.0 mF Iout = 60 mA Tamb = 25°C 1.0 0.01 100 1000 10,000 FREQUENCY (Hz) 100,000 Figure 30. Output Stability versus Output Current Over Temperature (150 mF, 3.0 V) Figure 31. Ripple Rejection versus Frequency with 10 nF Bypass Capacitor 100 UNSTABLE 85°C −40°C (dB) 25°C −40°C OUTPUT CAPACITOR ESR 10 STABLE 25°C Vin = 3.8 V Vout = 2.8 V −20 C = 1.0 mF O Iout = 60 mA −40 Tamb = 25°C −60 −80 0 1.0 85°C 0.10 UNSTABLE 0.01 0 Cout = 0.0 mF Vout = 3.0 V −100 −120 10 100 1000 10,000 100,000 1,000,000 10 20 30 40 50 60 70 80 90 100110120130140150 OUTPUT CURRENT (mA) FREQUENCY (Hz) Figure 33. Output Stability versus Output Current Over Temperature (0.1 mF, 3.0 V) Figure 32. Ripple Rejection versus Frequency without Bypass Capacitor http://onsemi.com 13 NCP623 ORDERING INFORMATION Device NCP623DM−28R2G NCP623DM−30R2G NCP623DM−33R2 Version 2.8 V 3.0 V 3.3 V 3.3 V 4.0 V 4.0 V 5.0 V 5.0 V 2.5 V 2.8 V 3.0 V 3.3 V 4.0 V 4.0 V 5.0 V Marking LJA LBJ LFW LFW LGN LGN LFX LFX 25 28 30 33 40 40 50 Package Micro8 (Pb−Free) Micro8 (Pb−Free) Micro8 Shipping † NCP623DM−33R2G NCP623DM−40R2 NCP623DM−40R2G NCP623DM−50R2 NCP623DM−50R2G NCP623MN−25R2G NCP623MN−28R2G NCP623MN−30R2G NCP623MN−33R2 NCP623MN−40R2 NCP623MN−40R2G NCP623MN−50R2 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 14 Á Á Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Micro8 (Pb−Free) Micro8 4000 Tape & Reel Micro8 (Pb−Free) Micro8 Micro8 (Pb−Free) DFN6, 3x3 (Pb−Free) DFN6, 3x3 (Pb−Free) DFN6, 3x3 (Pb−Free) DFN6, 3x3 DFN6, 3x3 DFN6, 3x3 (Pb−Free) DFN6, 3x3 3000 Tape & Reel ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á Á ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ NCP623 PACKAGE DIMENSIONS Micro8t CASE 846A−02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. 846A−01 OBSOLETE, NEW STANDARD 846A−02. DIM A A1 b c D E e L HE MILLIMETERS NOM MAX −− 1.10 0.08 0.15 0.33 0.40 0.18 0.23 3.00 3.10 3.00 3.10 0.65 BSC 0.40 0.55 0.70 4.75 4.90 5.05 MIN −− 0.05 0.25 0.13 2.90 2.90 INCHES NOM −− 0.003 0.013 0.007 0.118 0.118 0.026 BSC 0.021 0.016 0.187 0.193 MIN −− 0.002 0.010 0.005 0.114 0.114 MAX 0.043 0.006 0.016 0.009 0.122 0.122 0.028 0.199 D HE E PIN 1 ID e b 8 PL 0.08 (0.003) M TB S A S −T− PLANE 0.038 (0.0015) A1 SEATING A c L SOLDERING FOOTPRINT* 8X 1.04 0.041 0.38 0.015 8X 3.20 0.126 4.24 0.167 5.28 0.208 6X 0.65 0.0256 SCALE 8:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 15 NCP623 PACKAGE DIMENSIONS 6 PIN DFN, 3x3x0.9 CASE 488AE−01 ISSUE B EDGE OF PACKAGE D A L1 PIN ONE REFERENCE 2X E DETAIL A BOTTOM VIEW 0.15 C MOLD COMPOUND 2X 0.15 C TOP VIEW DETAIL B 0.10 C A 6X A1 DETAIL B SIDE VIEW 0.08 C SEATING PLANE A1 (A3) SIDE VIEW D2 1 3 C e DETAIL A 3.31 0.130 6X L E2 6X K 6 4 6X b NOTE 3 BOTTOM VIEW 0.10 C A B 0.05 C 0.63 0.025 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Micro8 is a trademark of International Rectifier. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 16 ÇÇÇ Ç ÇÇÇÇ ÇÇÇ Ç ÇÇÇÇ ÇÇ ÇÇÇÇ ÇÇ ÇÇÇ ÇÇÇ ÇÇÇ EXPOSED Cu B NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. TERMINAL b MAY HAVE MOLD COMPOUND MATERIAL ALONG SIDE EDGE. MOLD FLASHING MAY NOT EXCEED 30 MICRONS ONTO BOTTOM SURFACE OF TERMINAL b. DIM A A1 A3 b D D2 E E2 e K L L1 MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 0.25 0.18 0.30 3.00 BSC 2.25 2.55 3.00 BSC 1.55 1.85 0.65 BSC 0.20 −−− 0.30 0.50 0.00 0.021 ÇÇÇ ÇÇÇ ÇÇÇ ÇÇÇ (A3) ÇÇÇ ÇÇÇ ÇÇÇ ÇÇÇ ÇÇÇ ÇÇÇ SOLDERING FOOTPRINT* 2.45 0.964 Exposed Pad SMD Defined 1.700 0.685 0.65 0.025 0.35 0.014 mm inches SCALE 10:1 NCP623/D