NCP785A
Linear Regulator - Wide
Input Voltage Range,
Ultra-Low Iq, High PSRR
10mA
www.onsemi.com
The NCP785A is a high−performance linear regulator, offering a
very wide operating input voltage range of up to 450 V DC, with an
output current of up to 10 mA.
Ideal for high input voltage applications such as industrial and home
metering, home appliances. The NCP785A family offers ±5% initial
accuracy, extremely high−power supply rejection ratio and ultra−low
quiescent current. The NCP785A is optimized for high−voltage line
and load transients, making this part ideal for harsh environment
applications.
The NCP785A is offered in fixed output voltage options 3.3 V,
5.0 V, 12 V and 15 V.
SOT−89 package offers good thermal performance and help to
minimize the solution size.
MARKING
DIAGRAM
SOT−89
CASE 528AG
A
Y
W
XXXXX
G
Features
• Wide Input Voltage Range:
•
•
•
•
•
•
•
•
DC: Up to 450 V
AC: 85 V to 260 V (half−wave rectifier and 2.2 mF capacitor)
10 mA Guaranteed Output Current
Ultra Low Quiescent Current: Typ. 10 mA (VOUT ≤ 5 V)
±5% Accuracy Over Full Load, Line and Temperature Variations
Ultra−high PSRR: 70 dB at 60 Hz, 90 dB at 100 kHz
Stable with Ceramic Output Capacitor 22 mF MLCC
Thermal Shutdown and Current Limit Protection
Available in Thermally Enhanced SOT89−3 Package
This is a Pb−Free Device
1
Tab
AYW
XXXXXG
G
3
2
(Top Views)
(Tab is connected to Pin 2)
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
Typical Applications
• Industrial Applications, Home Appliances
• Home Metering / Network Application
• Off−line Power Supplies
VIN
25 V − 450 V
CIN
2.2 μF
VIN
VOUT
NCP785A
GND
VOUT
3.3 V, 5 V, 12 V, 15 V
VIN
85 VAC − 260 VAC
COUT
22 μF
CIN
2.2 μF/
450 V
VIN
VOUT
VOUT
3.3 V, 5 V, 12 V, 15 V
NCP785A
COUT
GND
22 μF
Figure 1. Typical Applications
© Semiconductor Components Industries, LLC, 2014
October, 2019 − Rev. 2
1
Publication Order Number:
NCP785A/D
NCP785A
VIN
Thermal
Shutdown
VREF
1.25 V
Current
Limit
+
−
+
−
VOUT
GND
NCP785A
Figure 2. Simplified Internal Block Diagram
Table 1. PIN FUNCTION DESCRIPTION
Pin No.
(SOT−89)
Pin Name
Description
1
VIN
Supply Voltage Input. Connect 2.2 mF capacitor from VIN to GND.
2, Tab
GND
Ground connection.
3
VOUT
Regulator Output. Connect 22 mF or larger MLCC capacitor from VOUT to GND.
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating
Input Voltage (Note 1)
Output Voltage
Maximum Junction Temperature
Storage Temperature
Symbol
Value
Unit
VIN
−0.3 to 700
V
VOUT
−0.3 to 18
V
TJ(MAX)
150
°C
TSTG
−55 to 150
°C
ESD Capability, Human Body Model (All pins except HV pin no.1) (Note 2)
ESDHBM
2000
V
ESD Capability, Machine Model (Note 2)
ESDMM
200
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Peak 650 V max 1 ms non repeated for 1 s
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)
Latch−up Current Maximum Rating tested per JEDEC standard: JESD78.
Table 3. THERMAL CHARACTERISTICS
Rating
Thermal Characteristics, SOT−89
Thermal Resistance, Junction−to−Air
www.onsemi.com
2
Symbol
Value
Unit
RqJA
79
°C/W
NCP785A
Table 4. ELECTRICAL CHARACTERISTICS, VOUT = 3.3 V (−40°C ≤ TJ ≤ 85°C; VIN = 340 V; IOUT = 100 mA, CIN = 2.2 mF,
COUT = 22 mF, unless otherwise noted. Typical values are at TJ = +25°C.) (Note 3)
Parameter
Test Conditions
Symbol
Min
VIN
25
TJ = 25°C, Iout = 100 mA, 25 V ≤ Vin ≤ 450 V
VOUT
3.1515
−40°C ≤ TJ ≤ 85°C, Iout = 100 mA,
25 V ≤ Vin ≤ 450 V
VOUT
Line Regulation
25 V ≤ Vin ≤ 450 V, Iout = 100 mA
Load Regulation
100 mA ≤ IOUT ≤ 10 mA, Vin = 35 V
Maximum Output Current (Note 4)
35 V ≤ Vin ≤ 450 V
Quiescent Current
IOUT = 0, 25 V ≤ Vin ≤ 450 V
Ground Current (Note 4)
25 V ≤ Vin ≤ 450 V
0 < IOUT ≤ 10 mA
Power Supply Rejection Ratio
Vin = 340 VDC +1 Vpp
modulation, Iout = 100 mA
Noise
f = 100 Hz to 100 kHz
Vin = 340 VDC, Iout = 100 mA
Thermal Shutdown Temperature
(Note 5)
Thermal Shutdown Hysteresis
(Note 5)
Operating Input Voltage DC
Output Voltage Accuracy
Max
Unit
450
V
3.3
3.4485
V
3.135
3.3
3.465
V
RegLINE
−0.5
0.2
+0.5
%
RegLOAD
−1.0
0.6
+1.0
%
IOUT
10.5
IQ
Typ
mA
7.5
IGND
f = 1 kHz
14
mA
15
mA
PSRR
70
dB
VNOISE
240
mVrms
Temperature increasing from TJ = +25°C
TSD
145
°C
Temperature falling from TSD
TSDH
−
10
−
°C
Table 5. ELECTRICAL CHARACTERISTICS, VOUT = 5.0 V (−40°C ≤ TJ ≤ 85°C; VIN = 340 V; IOUT = 100 mA, CIN = 2.2 mF,
COUT = 22 mF, unless otherwise noted. Typical values are at TJ = +25°C.) (Note 3)
Symbol
Min
VIN
50
TJ = 25°C, Iout = 100 mA, 50 V ≤ Vin ≤ 450 V
VOUT
4.775
−40°C ≤ TJ ≤ 85°C, Iout = 100 mA,
50 V ≤ Vin ≤ 450 V
VOUT
Line Regulation
50 V ≤ Vin ≤ 450 V, Iout = 100 mA
Load Regulation
100 mA ≤ IOUT ≤ 10 mA, Vin = 55 V
Maximum Output Current (Note 4)
55 V ≤ Vin ≤ 450 V
Quiescent Current
IOUT = 0, 50 V ≤ Vin ≤ 450 V
Ground Current (Note 4)
50 V ≤ Vin ≤ 450 V
0 < IOUT ≤ 10 mA
Power Supply Rejection Ratio
Vin = 340 VDC +1 Vpp
modulation, Iout = 100 mA
Noise
f = 100 Hz to 100 kHz
Vin = 340 VDC, Iout = 100 mA
Thermal Shutdown Temperature
(Note 5)
Thermal Shutdown Hysteresis
(Note 5)
Parameter
Test Conditions
Operating Input Voltage DC
Output Voltage Accuracy
Max
Unit
450
V
5.0
5.225
V
4.75
5.0
5.25
V
RegLINE
−0.5
0.2
+0.5
%
RegLOAD
−1.0
0.62
+1.0
%
IOUT
10.5
IQ
Typ
mA
16
IGND
f = 1 kHz
21
mA
23
mA
PSRR
70
dB
VNOISE
300
mVrms
Temperature increasing from TJ = +25°C
TSD
145
°C
Temperature falling from TSD
TSDH
−
10
−
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA =
25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
4. A proper heatsinking and/or low duty cycle pulse techniques are used to operate the device within the Safe Operating Area.
5. Guaranteed by design
www.onsemi.com
3
NCP785A
Table 6. ELECTRICAL CHARACTERISTICS, VOUT = 12 V (−40°C ≤ TJ ≤ 85°C; VIN = 340 V; IOUT = 100 mA, CIN = 2.2 mF,
COUT = 22 mF, unless otherwise noted. Typical values are at TJ = +25°C.) (Note 6)
Parameter
Test Conditions
Symbol
Min
VIN
55
TJ = 25°C, Iout = 100 mA, 55 V ≤ Vin ≤ 450 V
VOUT
11.460
−40°C ≤ TJ ≤ 85°C, Iout = 100 mA,
55 V ≤ Vin ≤ 450 V
VOUT
Line Regulation
55 V ≤ Vin ≤ 450 V, Iout = 100 mA
Load Regulation
100 mA ≤ IOUT ≤ 10 mA, Vin = 65 V
Maximum Output Current (Note 7)
55 V ≤ Vin ≤ 450 V
Quiescent Current
IOUT = 0, 55 V ≤ Vin ≤ 450 V
Ground Current (Note 7)
55 V ≤ Vin ≤ 450 V
0 < IOUT ≤ 10 mA
Power Supply Rejection Ratio
Vin = 340 VDC +1 Vpp
modulation, Iout = 100 mA
Noise
f = 100 Hz to 100 kHz
Vin = 340 VDC, Iout = 100 mA
Thermal Shutdown Temperature
(Note 8)
Thermal Shutdown Hysteresis
(Note 8)
Operating Input Voltage DC
Output Voltage Accuracy
Max
Unit
450
V
12
12.540
V
11.4
12
12.6
V
RegLINE
−0.5
0.1
+0.5
%/V
RegLOAD
−1.0
0.66
+1.0
%
IOUT
10.5
IQ
Typ
mA
17
IGND
f = 1 kHz
22
mA
25
mA
PSRR
70
dB
VNOISE
420
mVrms
Temperature increasing from TJ = +25°C
TSD
145
°C
Temperature falling from TSD
TSDH
−
10
−
°C
Table 7. ELECTRICAL CHARACTERISTICS, VOUT = 15 V (−40°C ≤ TJ ≤ 85°C; VIN = 340 V; IOUT = 100 mA, CIN = 2.2 mF,
COUT = 22 mF, unless otherwise noted. Typical values are at TJ = +25°C.) (Note 6)
Symbol
Min
VIN
60
TJ = 25°C, Iout = 100 mA, 60 V ≤ Vin ≤ 450 V
VOUT
14.325
−40°C ≤ TJ ≤ 85°C, Iout = 100 mA,
60 V ≤ Vin ≤ 450 V
VOUT
Line Regulation
60 V ≤ Vin ≤ 450 V, Iout = 100 mA
Load Regulation
100 mA ≤ IOUT ≤ 10 mA, Vin = 65 V
Maximum Output Current (Note 7)
65 V ≤ Vin ≤ 450 V
Quiescent Current
IOUT = 0, 60 V ≤ Vin ≤ 450 V
Ground Current (Note 7)
60 V ≤ Vin ≤ 450 V
0 < IOUT ≤ 10 mA
Power Supply Rejection Ratio
Vin = 340 VDC +1 Vpp
modulation, Iout = 100 mA
Noise
f = 100 Hz to 100 kHz
Vin = 340 VDC, Iout = 100 mA
Thermal Shutdown Temperature
(Note 8)
Thermal Shutdown Hysteresis
(Note 8)
Parameter
Test Conditions
Operating Input Voltage DC
Output Voltage Accuracy
Max
Unit
450
V
15
15.675
V
14.25
15
15.75
V
RegLINE
−0.5
0.1
+0.5
%/V
RegLOAD
−1.0
0.66
+1.0
%
IOUT
10.5
IQ
Typ
mA
18
IGND
f = 1 kHz
22
mA
25
mA
PSRR
70
dB
VNOISE
500
mVrms
Temperature increasing from TJ = +25°C
TSD
145
°C
Temperature falling from TSD
TSDH
−
10
−
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA =
25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
7. A proper heatsinking and/or low duty cycle pulse techniques are used to operate the device within the Safe Operating Area.
8. Guaranteed by design
www.onsemi.com
4
NCP785A
TYPICAL CHARACTERISTICS
3.310
OUTPUT VOLTAGE (V)
3.308
VIN = 450 V
VIN = 250 V
3.307
NCP785AH33T1G
3.306
CIN = 2.2 mF
COUT = 22 mF
IOUT = 100 mA
3.305
3.304
−40
−20
0
20
40
CIN = 2.2 mF
COUT = 22 mF
IOUT = 100 mA
5.035
−20
0
20
40
60
80
Figure 4. Output Voltage vs. Temperature
15.060
VIN = 250 V
VIN = 50 V
VIN = 450 V
VIN = 350 V
NCP785AH12T1G
CIN = 2.2 mF
COUT = 22 mF
IOUT = 100 mA
11.96
−20
0
20
40
VIN = 350 V
15.055
11.97
VIN = 150 V
15.045
VIN = 60 V
15.040
15.035
15.030
NCP785A150T1G
15.025
CIN = 2.2 mF
COUT = 22 mF
IOUT = 100 mA
15.020
60
VIN = 250 V
VIN = 450 V
15.050
15.015
−40
80
−20
0
20
40
60
80
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 5. Output Voltage vs. Temperature
Figure 6. Output Voltage vs. Temperature
3.3088
5.0485
3.3087
5.0475
3.3086
5.0465
3.3085
NCP785AH33T1G
3.3084
CIN = 2.2 mF
COUT = 22 mF
IOUT = 100 mA
3.3083
3.3082
NCP785AH50T1G
Figure 3. Output Voltage vs. Temperature
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
5.040
TEMPERATURE (°C)
11.99
11.95
−40
VIN = 50 V
5.045
5.030
−40
80
VIN = 150 V
11.98
5.050
TEMPERATURE (°C)
12.00
OUTPUT VOLTAGE (V)
60
VIN = 100 V − 450 V
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
3.309
5.055
VIN = 350 V
0
50
100
150
200
250
300
350
5.0455
NCP785AH50T1G
5.0445
CIN = 2.2 mF
COUT = 22 mF
TA = 25°C
IOUT = 100 mA
5.0435
400 450
5.0425
50
100
150
200
250
300
350
400
INPUT VOLTAGE (V)
INPUT VOLTAGE (V)
Figure 7. Output Voltage vs. Input Voltage
Figure 8. Output Voltage vs. Input Voltage
www.onsemi.com
5
450
NCP785A
11.985
15.050
11.980
15.048
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
TYPICAL CHARACTERISTICS
11.975
11.970
NCP785AH120T1G
CIN = 2.2 mF
COUT = 22 mF
TA = 25°C
IOUT = 100 mA
11.965
11.960
50
100
150
250
200
300
350
450
400
15.046
NCP785AH150T1G
15.044
CIN = 2.2 mF
COUT = 22 mF
TA = 25°C
IOUT = 100 mA
15.042
15.040
50
100
150
200
250
400
450
Figure 10. Output Voltage vs. Input Voltage
Figure 9. Output Voltage vs. Input Voltage
8.0
18
QUIESCENT CURRENT (mA)
7.8
QUIESCENT CURRENT (mA)
350
INPUT VOLTAGE (V)
INPUT VOLTAGE (V)
7.6
7.4
TA = 85°C
TA = 25°C
7.2
TA = −40°C
7.0
6.8
NCP785AH33T1G
6.6
CIN = 2.2 mF
COUT = 22 mF
IOUT = 0
6.4
6.2
6.0
300
0
50
100
150
200
250
300
350
400
17
TA = 85°C
16
TA = 25°C
15
14
CIN = 2.2 mF
COUT = 22 mF
IOUT = 0
13
12
450
TA = −40°C
50
100
150
200
NCP785AH50T1G
250
300
350
400
450
INPUT VOLTAGE (V)
INPUT VOLTAGE (V)
Figure 11. Quiescent Current vs. Input Voltage
Figure 12. Quiescent Current vs. Input Voltage
www.onsemi.com
6
NCP785A
TYPICAL CHARACTERISTICS
23
19
18
TA = 25°C
17
16
TA = −40°C
15
CIN = 2.2 mF
COUT = 22 mF
IOUT = 0
14
13
NCP785AH120T1G
50
100
150
250
200
300
350
19
TA = −40°C
18
CIN = 2.2 mF
COUT = 22 mF
IOUT = 0
17
16
450
TA = 25°C
20
0
50
100
150
NCP785AH150T1G
250
200
300
350
400 450
Figure 13. Quiescent Current vs. Input Voltage
Figure 14. Quiescent Current vs. Input Voltage
VIN = 150 V
5.15
VIN = 50 V
VIN = 25 V
3.30
3.29
VIN = 250 V
3.28
VIN = 350 V
NCP785AH33T1G
3.27
VIN = 450 V
CIN = 2.2 mF
COUT = 22 mF
TA = 25°C
3.26
0
1
2
3
4
5
6
7
8
9
5.10
5.05
VIN = 350 V
VIN = 50 V
NCP785AH50T1G
5.00
4.95
10
VIN = 100 V
VIN = 200 V
VIN = 450 V
CIN = 2.2 mF
COUT = 22 mF
TA = 25°C
0
1
2
3
4
5
6
7
8
OUTPUT CURRENT (mA)
Figure 15. Output Voltage vs. Output Current
Figure 16. Output Voltage vs. Output Current
11.99
10
9
OUTPUT CURRENT (mA)
15.10
VIN = 150 V
11.98
VIN = 100 V
VIN = 100 V
15.05
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
11.97
11.96
VIN = 55 V
11.95
11.94
11.93
VIN = 200 V
NCP785AH120T1G
11.92
CIN = 2.2 mF
COUT = 22 mF
TA = 25°C
11.91
11.90
11.89
21
INPUT VOLTAGE (V)
3.31
3.25
400
TA = 85°C
22
INPUT VOLTAGE (V)
3.32
OUTPUT VOLTAGE (V)
QUIESCENT CURRENT (mA)
TA = 85°C
OUTPUT VOLTAGE (V)
QUIESCENT CURRENT (mA)
20
0
1
2
VIN = 300 V
VIN = 350 V
3
4
5
6
7
9
VIN = 60 V
15.00
14.95
NCP785AH150T1G
14.90
14.80
10
VIN = 300 V
CIN = 2.2 mF
COUT = 22 mF
TA = 25°C
14.85
VIN = 450 V
8
VIN = 200 V
0
2
VIN = 350 V
4
6
VIN = 450 V
8
OUTPUT CURRENT (mA)
OUTPUT CURRENT (mA)
Figure 17. Output Voltage vs. Output Current
Figure 18. Output Voltage vs. Output Current
www.onsemi.com
7
10
NCP785A
TYPICAL CHARACTERISTICS
8
5.0
NCP785AH33T1G
4.0
CIN = 2.2 mF
COUT = 22 mF
IOUT = 100 mA
VIN = 340 V
TA = 25°C
(mV/√Hz)
3.5
3.0
2.5
1.5
5
4
3
2
1.0
1
10
100
1K
10K
100K
0
1M
10
100
1K
10K
100K
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 19. Output Noise Density vs. Frequency
Figure 20. Output Noise Density vs. Frequency
8
25
7
NCP785AH50T1G
6
NCP785AH150T1G
20
CIN = 2.2 mF
COUT = 22 mF
IOUT = 100 mA
VIN = 340 V
TA = 25°C
5
4
(mV/√Hz)
(mV/√Hz)
CIN = 2.2 mF
COUT = 22 mF
IOUT = 100 mA
VIN = 340 V
TA = 25°C
6
2.0
0.5
0
NCP785AH50T1G
7
(mV/√Hz)
4.5
3
2
CIN = 2.2 mF
COUT = 22 mF
IOUT = 100 mA
VIN = 340 V
TA = 25°C
15
10
5
1
0
10
100
1K
10K
100K
0
1M
10
100
1K
10K
100K
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 21. Output Noise Density vs. Frequency
Figure 22. Output Noise Density vs. Frequency
www.onsemi.com
8
NCP785A
APPLICATION INFORMATION
The typical application circuit for the NCP785A device is shown below.
VIN
25 V − 450 V
VIN
VOUT
3.3 V, 5 V, 15 V
VOUT
NCP785A
CIN
2.2 μF
COUT
22 μF
GND
Figure 23. Typical Application Schematic
Input Decoupling (C1)
Layout Recommendations
A 1 mF capacitor either ceramic or electrolytic is
recommended and should be connected close to the input pin
of NCP785A. Higher value 2.2 mF is necessary to sustain the
required minimum input voltage at full load for AC voltage
as low as 85 V with half wave rectifier.
Please be sure the VIN and GND lines are sufficiently
wide. When the impedance of these lines is high, there is a
chance to pick up noise or to cause the malfunction of
regulator.
Set external components, especially the output capacitor,
as close as possible to the circuit, and make leads as short as
possible.
Output Decoupling (C2)
The NCP785A Regulator does not require any specific
Equivalent Series Resistance (ESR). Thus capacitors
exhibiting ESRs ranging from a few mW up to 0.5 W can be
used safely. The minimum decoupling value is 22 mF. The
regulator accepts ceramic chip capacitors as well as
tantalum devices or low ESR electrolytic capacitors. Larger
values improve noise rejection and load transient response.
Thermal
As power across the NCP785A increases, it might become
necessary to provide some thermal relief. The maximum
power dissipation supported by the device is dependent
upon board design layout and used package. Mounting pad
configuration on the PCB, the board material, and also the
ambient temperature affect the rate of temperature rise for
the part. This is stating that when the NCP785A has good
thermal conductivity through the PCB, the junction
temperature will be relatively low with high power
dissipation applications.
ORDERING INFORMATION
Part Number
Output Voltage
Marking
NCP785AH33T1G
3.3 V
AA
NCP785AH50T1G
5V
AC
NCP785AH120T1G
12 V
AJ
NCP785AH150T1G
15 V
AD
Package
Shipping†
SOT−89
(Pb−Free)
1000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−89, 3 LEAD
CASE 528AG
ISSUE O
DATE 04 MAR 2014
SCALE 2:1
A
D
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS INCLUDES LEAD FINISH.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
5. DIMENSIONS L, L2, D2, AND H ARE MEASURED AT
DATUM PLANE C.
6. CENTER LEAD CONTOUR MAY VARY WITHIN THE
REGION DEFINED BY DIMENSION E.
7. DIMENSION D2 IS DEFINED AT ITS WIDEST POINT.
H
1
2
3
DIM
A
b
b1
c
D
D2
E
e
H
L
TOP VIEW
c
A
0.10 C
C
SIDE VIEW
e
b1
1
GENERIC
MARKING DIAGRAM*
e
b
2
MILLIMETERS
MIN
MAX
1.40
1.60
0.38
0.47
0.46
0.55
0.40
0.44
4.40
4.60
1.60
1.90
2.40
2.60
1.50 BSC
4.05
4.25
0.89
1.20
L2
Y W
3
L
X X
Y
= Year
W = Work Week
XX = Specific Device Code
D2
B
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present.
BOTTOM VIEW
RECOMMENDED
MOUNTING FOOTPRINT*
2.00
PACKAGE
OUTLINE
4.45
1.57
2X
1
0.50
2X
1.50
0.86
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON82692F
SOT−89, 3 LEAD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative