NCP81103AMNTXG

Dual-Edge & Flex-Mode Modulation Vcore Controllers for VR11.0 to VR12.6+ Designs Multi-phase buck controllers from ON Semiconductor combine differential voltage and current sensing, and adaptive voltage positioning to power the latest generation of microprocessors. Dual-edge and flex mode PWM, combined with inductor current sensing, reduces system cost by providing the fastest initial response to a transient, thereby requiring fewer bulk and ceramic output capacitors to satisfy transient load-line requirements. An integrated, high performance operational error amplifier enables easy compensation of the system. The proprietary Dynamic Reference Injection method makes the error amplifier compensation virtually independent of the system response to VID changes, eliminating tradeoffs between overshoot and dynamic VID performance. Features • Meet VR11.0, 11.1, 12.0, 12.5, 12.6, 12.6+ specifications • Pin programmable phase count configuration • Current mode dual edge modulation for fast initial response to transient loading • Phase-to-phase dynamic current balancing • Dual high performance operational error amplifier • Temperature compensated inductor current sensing • Power saving phase shedding • VIN feed forward ramp slope • Programmable switching frequency range • Startup into pre-charged loads while avoiding false OVP • Over voltage, under voltage, and over current protection (OVP & UVP & OCP) Device NCP81101 NCP81105 NCP81108 NCP81109 NCP81110 NCP81118 NCP81102 NCP81103 NCP81106 NCP81116 NCP81119 NCP6121 NCP6151 NCP6153 NCP5395 NCP6133 NCP4206 NCP4208 NCP81022 NCP81128 VR Spec VR12.6+ VR12.6 VR12.6 VR12.6 VR12.6 VR12.6 VR12.5 VR12.5 VR12.5 VR12.5 VR12.5 VR12 VR12 VR11.1 VR11.1 VR11.1 VR11.1 VR11.1 SV12 SV12 Controller Architecture RPM Dual Edge Dual Edge RPM RPM Dual Edge Dual Edge Dual Edge Dual Edge Dual Edge Dual Edge Flex Mode + Dual Edge Flex Mode + Dual Edge Dual Edge Dual Edge Flex Mode Dual Edge Dual Edge Dual Edge Dual Edge CPU Phases 1 2/3 2/3 1 1 2/3 2/3/4 2/3 2/3 2/3 2/3/4 2/3 3/4 2/3/4 2/3/4 2/3/4 1/2/3/4/5/6 1/2/3/4/5/6/7/8 4 2 GPU Phases — — — — — — — — — — — 1 1 — — — — — 1 2 Integrated Drivers 1x5V — 2 1 + FETs 1 + FETs 2x5V — 2x5V 2 x 12 V 2 x 12 V — — — — 3 CPU — — — — 2x5V Interface SVID SVID SVID SVID SVID SVID SVID SVID SVID SVID SVID SVID SVID PVID PVID PVID PVID PVID SVI2 SVI2 SM-Bus — — — — — — — — — Y — — — — — — Y Y — — Package QFN-28 QFN-36 QFN-36 QFN-48 QFN-48 QFN-36 QFN-32 QFN-36 QFN-40 QFN-36 QFN-32 QFN-56 QFN-56 QFN-40 QFN-48 LFCSP-40 QFN-48 QFN-48 QFN-52 QFN-52 Please contact ON Semiconductor for product datasheets. Page 2 Computing Solutions Desktop Solutions Server Solutions NCP81102 1/2/3/4-phase controller • Dual edge modulation for fast transient response • Constant on-time for light load efficiency • Supports all MLCC output capacitor solutions • VR12.5 compliant NCP4206 1/2/3/4/5/6-phase controller • Highly efficient, multiphase, synchronous buck switching regulator controller • Supports PSI, to reduce the number of operating phases at light loads • SMBus interface enables digital programming of key system parameters to optimize system performance and provide feedback • NCP4206 has built in shunt regulator, enabling it to be powered from +12 V system supply through series resistor +12V NTMFS4C10N NCP81161 12 V Driver NTMFS4C06N +12V +12V NTMFS4C10N NCP81102 NCP81161 12 V Driver 4-Phase Controller NCP81161 12 V Driver NTMFS4C06N +12V CPU +12V NCP81161 12 V Driver NTMFS4C10N NCP81161 12 V Driver NTMFS4C06N Dual FET* +12V +12V NCP4206 NTMFS4C10N NCP81161 12 V Driver Dual FET* NCP81161 12 V Driver 6-Phase Controller NTMFS4C06N CPU Dual FET* +12V * Dual FET = NTMFD4C85N or NTMFD4H84NF (Both Pending 2H14) NCP81161 12 V Driver Dual FET* +12V NCP81161 12 V Driver Dual FET* +12V NCP81161 12 V Driver Dual FET* Notebook Solutions Integrated Ultrabook/Notebook Solution NCP81103/8 1/2/3-phase controller with drivers • High performance notebook solutions • Dual edge modulation for fast transient response • Features 2 integrated 5 V drivers • VR12.5 (NCP81103) & VR12.6 (NCP81108) compliant NCP81110 1-phase converter • Integrated solution with drivers and 14 A TDC MOSFETs • Smallest solution footprint for compact design • Higher efficiency for longer battery life • VR12.6 compliant VIN NTMFS4C10N NCP81110 NTMFS4C06N VIN NCP81103 NTMFS4C10N 3-Phase Controller NTMFS4C06N CPU 1-Phase Controller + FETs CPU VIN NTMFS4C10N NCP81151 5 V Driver ON Semiconductor NTMFS4C06N Page 3 VR12.5/6 Multiphase Controllers for Embedded Applications VCC PVCC VRPM SDIO Alert SCLK BST HG SW VRHOT TTSENSE VCORE LG Features BST • Dual-edge pulse width modulation • Fastest initial response to dynamic load events • True differential voltage sensing • Differential inductor DCR current sensing • Input voltage feed forward • Adaptive voltage positioning • Pin-programmable controller configuration • Integrated OVP, UVP, OCP • Operating temperature range: -40°C to +125°C NCP81143 3PH HG VCORE SW SCLK SDA Alert LG NCP81145 BST PWM2 HG VCORE SW LG VR_RDY DIFFOUT FB COMP INTSEL ILIM ROSC IMAX CSCOMP CSSUM IOUT CSREF PGND Device GND CSP1 CSP2 CSP3 Description Driver / MOSFETs Package NCP81140 4-Phase Controller — QFN-32 NCP81141 1-Phase VR12.6 Controller Integrated 5 V Driver QFN-28 NCP81142 4-Phase VR12.5 Controller — QFN-32 NCP81143 3-Phase VR12.5 Controller 2x Integrated 5 V Drivers QFN-36 NCP81145 5 V Driver — DFN-8 NCP81146 12 V Driver — DFN-8 NCP81147* 1-Phase Buck 0.8 V / 3.3 V — QFN-16 NCP81148 Dual Buck with LDOs — QFN-28 NCP81149* 1-Phase VR12.6 Controller Integrated MOSFETs — * Pending 2H14 Page 4 Computing Solutions System Power System power management devices provide additional rails in computing applications, beyond Vcore and graphics. They are available with single or dual channel operation, and also in multi-phase configurations. 1 F VIN = 2.5 V − 13.2 V 3x22 F VBST = 4.5 V − 15 V 1500 F VCC = 4.5 V − 13.2 V 2x0.22 F 1500 F 0.1 F C3 0.014 F R3 74.2 FB LG GND VOS R9 R10 NTD4806 LX ROCSET R1 4.12k C2 0.007 F VOUT 1.65 V 1 H 2x1800 F 4.7nF 1.02k R4 3.878k R2 17.08k UG 1.02k C1 0.0015 F COMP/EN 2.2 BOOT NTD4809 VCC PGOOD GND NCP1589A Application Diagram Device NCP1579 Description Synchronous Buck Controller, Low Voltage Topology Step-Down VCC Min (V) 4.5 VCC Max (V) 13.2 fSW Typ (MHz) 275 Package SOIC-8 NCP1587 Synchronous Buck Controller, Low Voltage Step-Down 4.5 13.2 250 - 300 SOIC-8 NCP1587A Synchronous Buck Controller, Low Voltage Step-Down 4.5 13.2 180 - 220 SOIC-8 NCP1589A Synchronous Buck Controller, Low Voltage Step-Down 4.5 13.2 — DFN-10 NCP1589D Snychronous Buck Controller Step-Down 4.5 13.2 — DFN-10 NCP1589L Synchronous Buck Controller, Low Voltage, with Light Load Efficiency and Transient Enhancement Step-Down 4.5 13.2 — DFN-10 NCP5212 Single Synchronous Step Down Controller Step-Down 4.5 27 300 QFN-16 NCP5212T Single Synchronous Step Down Controller Step-Down 4.5 27 300 QFN-16 NCP5217 Synchronous Buck Controller, Single Step-Down 4.5 27 300 QFN-14 NCP5222 Synchronous Buck Controller, 2-Channel, 2-Phase Step-Down 4.5 27 300 QFN-28 NCP5230 Low Voltage Synchronous Buck Controller Step-Down 4.5 13.2 — QFN-16 NCP5269 System Agent Controller with 2-bit VID Step-Down 3.3 28 300 - 600 QFN-20 ON Semiconductor Page 5 Thermal Management and System Monitoring 8 GPIOs Extensive Portfolio SMBus Interface RESET I/O Local Sensors provide temperature information at the device location Remote Sensors provide temperature information of a transistor located at a different position on the board; also includes local sensor capability 4 PWM O/Ps System Voltages +12 V +5 V +3.3 V 8 Tach Inputs +2.5 V +1.8 V Fan Controllers integrate the temperature sensor with a fan controller/monitor System Monitors integrate combinations of remote and/or local temperature sensing, voltage monitoring, fan control & monitoring, reset control, and GPIO functions Fan Drive and Control • 4 PWM Fan Drive Outputs • 8 Tach Inputs Fan2Max +1.5 V +1.25 V +0.9 V TDM1 Temperature • Measures 4 Temp Zones TDM2 VBatt TDM3 1 Local 3 Remote THERM I/O Bi-directional THERM Pins Chassis Intrusion ALERT O/P Supply Range (V) 3 - 5.5 3 - 5.5 2.8 - 5.75 3 - 3.6 3 - 3.6 3 - 3.6 3 - 3.6 3 - 3.6 2.8 - 3.6 1.4 - 2.75 3 - 5.5 3 - 5.5 3 - 5.5 3 - 3.6 3 - 3.6 Temperature Range (°C ) -40 to +120 -40 to +125 -40 to +125 -40 to +120 -40 to +120 -40 to +120 -40 to +120 -40 to +120 -40 to +125 -40 to +125 -55 to +125 -40 to +125 -40 to +125 -40 to +125 -40 to +125 Local Accuracy (°C) ±3 ±2.25 ±2 ±1.5 ±1.5 ±1.5 ±1 ±1 ±1 ±1.75 ±1 ±3 ±3 ±1 ±1 Interface I2C/SMBUS I2C/SMBUS I2C/SMBUS I2C/SMBUS I2C/SMBUS I2C/SMBUS I2C/SMBUS I2C/SMBUS I2C/SMBUS I2C/SMBUS I2C/SMBUS I2C/SMBUS I2C/SMBUS I2C/SMBUS I2C/SMBUS Number of Addresses 3 2 8 3 3 1 8 8 2 2 9 2 2 2 9 NCT75 3 - 5.5 -55 to +125 ±1 I2C/SMBUS 8 NCT275* 3 - 5.5 -55 to +125 ±1 I2C/SMBUS 4 NCT203 1.4 - 2.75 -40 to +125 ±1.75 I2C/SMBUS 1 Device ADM1026 System ADT7462 Monitors NCT80 ADT7476 ADT7473 ADT7475 Fan Controllers ADM1033 ADM1034 NCT72 NCT218 NCT210 Remote ADM1032 Sensors ADT7461 ADT7481 ADT7483 Local Sensors SRC (Ω) — 2k — — 3k — 1k 1k 1.5 k 150 — — 3k — — Remote Accuracy ±3 ±2.25 — ±1.5 ±1.5 ±1.5 ±1 ±1 ±1 ±1 ±3 ±1 ±1 ±1 ±1 Remote Channels 2 3 — 2 2 2 1 2 1 1 2 1 1 2 2 Fan Channels 8 4 — 3 3 3 1 2 Voltage TACH Monitoring Channels Channels 8 19 8 13 2 7 4 5 4 4 1 2 GPIOs 17 8 1 — Package LQFP-48 LFCSP-32 TSSOP-24 QSOP-24 QSOP-16 QSOP-16 QSOP-16 QSOP-16 DFN-8, WDFN-8 WDFN-8, WLCSP-8 QSOP-16 SOIC-8, MSOP-8 SOIC-8, MSOP-8 MSOP-10 QSOP-16 DFN-8, SOIC-8, Micro8 CSP-6 DFN-8, SOIC-8, Micro8 * Pending 2H14. Page 6 Computing Solutions Integrated MOSFET and Drivers Features • Integrated high- and low-side MOSFETs • Integrated bootstrap diode • Matched of driver and MOSFETs optimize switching performance • Higher switching frequency enables use of smaller inductor and output capacitors • Low-side MOSFET diode emulation mode provides asynchronous operation • 65% lower BOM; 45% smaller footprint and simplified layout versus discrete solutions VIN 3-Phase 3-Phase Driver DrMOS IA Rail IA Rail Driver DrMOS VIN Driver DrMOS GT Rail 2-Phase 2-Phase GT Rail Driver DrMOS Discrete versus Device PWM Input NCP5369 NCP81081 NCP5338 NCP5368* 5 V Tri-state 3.3 V Tri-state 5 V Tri-state 5 V Tri-state Integrated VIN Max (V) Freq Max (MHz) 25 25 20 15 IOUT Continuous Max (A) Package 40 40 40 35 QFN-40 QFN-40 QFN-40 QFN-40 1 1 1 2 * Pending 2H14. Drivers for Discrete MOSFET Implementations Drivers specifically designed to work with controller solutions, and optimized for 5 V or 12 V gate applications. Device Drivers NCP5901 NCP5901B NCP81161 NCP81151 NCP81253 NCP81061 NCP81152 Single Single Single Single Single Dual Dual VCC Typ (V) Integrated Bootstrap Diode 12 12 12 5 5 12 5 N Y Y Y Y Y Y ZCD* Package Y Y Y Y N Y Y DFN-8 DFN-8 DFN-8 DFN-8 DFN-8 QFN-16 QFN-16 * Zero Crossover Detection. ON Semiconductor Page 7 MOSFETs Provide Optimized Efficiency D1 Asymmetric Dual (2, 3, 4, 9) (1) G1 • Co-packaged Power Stage to minimize board space • Low Side MOSFET with Integrated Schottky • Parasitic Inductances Minimized • Optimized Devices to Reduce Power Losses S1/D2 (10) (8) G2 S2 (5, 6, 7) Device Package Config NTMFD4C85N* PowerPhase Asym Dual NTMFD4H84NF* PhaseFET Asym Dual NTMFD4H85NF* PhaseFET Asym Dual NTMFD4C86N* PowerPhase Asym Dual NTMFD4901NF SO-8FL Asym Dual NTMFD4C87N* PowerPhase Asym Dual NTMFD4C88N* PowerPhase Asym Dual NTMFD4C20N SO-8FL Asym Dual NTMFD4902NF SO-8FL Asym Dual NTLLD4901NF m8-FL/ WDFN-8 Asym Dual Polarity N N N N + Int Sch N N + Int Sch N N N N + Int Sch N N N N N N N N + Int Sch N N + Int Sch VDS (V) 30 30 25 25 25 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 Maximum Rating RDS(ON) (mΩ) VGS VGS = VGS = (V) 10 V 4.5 V 20 3.0 4.3 20 0.8 1.2 20 3.3 4.8 20 0.8 1.3 20 3.6 4.7 20 1.5 2.1 20 5.4 8.1 20 2.1 3.0 20 6.5 10.0 20 2.4 3.5 20 5.0 7.7 20 3.1 4.3 20 5.0 7.7 20 3.4 5.0 20 7.0 10.8 20 3.4 5.2 20 6.5 10.0 20 4.1 6.2 20 20.0 30.0 20 15.0 22.0 Qg (nC) 15.0 45.2 8.9 28.5 8.5 33.9 10.9 21.6 9.7 20.0 10.9 13.8 10.9 11.0 9.3 13.0 9.7 11.5 5.5 5.9 Qgd (nC) 5.2 11.8 2.6 9.0 1.9 7.9 5.4 5.5 3.7 5.3 5.4 3.6 5.4 2.9 4.2 3.0 3.7 3.4 1.4 2.9 Ciss (pF) 1960 6660 1222 3893 1194 4896 1252 3040 1150 2950 1252 1939 1252 1546 970 1950 1150 1510 605 645 Crss (pF) 102 126 36 164 35 180 126 77 105 82 129 49 126 39 125 50 105 83 100 16 RG (Ω) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 0.8 0.8 1.0 1.0 1.0 1.0 1.0 1.0 0.8 0.8 0.8 0.8 Applications Control Side Synchronous Side Control Side Synchronous Side Control Side Synchronous Side Control Side Synchronous Side Control Side Synchronous Side Control Side Synchronous Side Control Side Synchronous Side Control Side Synchronous Side Control Side Synchronous Side Control Side Synchronous Side * Pending 3Q14. Page 8 Computing Solutions MOSFETs Provide Optimized Efficiency SO-8FL 5 x 6 mm µ8FL 3.3 x 3.3 mm DPAK SOIC-8 5 x 6 mm ON Semiconductor Device Package NTMFS4C01N SO-8FL Configuration Polarity VDS (V) Maximum Rating RDS(ON) (mΩ) VGS VGS = VGS = (V) 10 V 4.5 V Single N 30 20 0.9 1.2 Qg (nC) Qgd (nC) Ciss (pF) Crss (pF) RG (Ω) Applications 65.0 18.0 9200 231 1.0 HPPC NTMFS4C03N SO-8FL Single N 30 20 2.1 2.8 43.7 5.3 2850 72 1.0 HPPC NTMFS4983NF SO-8FL Integ Sch N 30 20 2.1 3.1 22.6 6.9 3250 90 1.0 Synchronous Side NTMFS4C35N SO-8FL Single N 30 20 3.2 4.2 15.0 5.5 2300 46 1.0 Synchronous Side NTMFS4985NF SO-8FL Integ Sch N 30 20 3.4 5.0 14.2 4.2 2100 60 1.0 Synchronous Side NTMFS4C05N SO-8FL Single N 30 20 3.4 5.0 13.0 3.0 1950 50 1.0 Synchronous Side NTMFS4C06N SO-8FL Single N 30 20 4.0 6.0 14.5 5.5 1988 71 1.0 Synchronous Side NTMFS4C08N SO-8FL Single N 30 20 5.8 8.5 8.7 2.8 1100 38 1.0 Synchronous Side NTMFS4C09N SO-8FL Single N 30 20 6.0 8.8 10.9 5.4 1252 126 1.0 Control Side Control Side NTMFS4C10N SO-8FL Single N 30 20 7.0 10.8 9.3 4.2 970 125 1.0 NTMFS4C13N SO-8FL Single N 30 20 9.1 13.8 6.6 2.7 720 95 1.0 Control Side NTTFS4C05N µ8-FL Single N 30 20 3.6 5.1 13.0 3.0 1950 50 1.0 Synchronous Side NTTFS4C06N µ8-FL Single N 30 20 4.0 6.0 14.5 5.5 1988 71 1.0 Synchronous Side NTTFS4C08N µ8-FL Single N 30 20 5.8 8.5 8.7 2.8 1100 38 1.0 Synchronous Side NTTFS4C10N µ8-FL Single N 30 20 7.4 11.0 9.3 4.2 970 125 1.0 Control Side NTTFS4C13N µ8-FL Single N 30 20 9.1 13.8 6.6 2.7 720 95 1.0 Control Side NTTFS4C25N µ8-FL Single N 30 20 17.0 26.5 4.0 1.3 455 60 1.0 Control Side NTD4904N DPAK Single N 30 20 3.7 5.5 16.8 3.0 3052 23.0 1.0 Synchronous Side NTD4965N DPAK Single N 30 20 4.7 7.0 17.5 8.5 1684 330 0.8 Synchronous Side NTD4906N DPAK Single N 30 20 5.5 8.0 11.0 1.8 1932 19 1.0 Synchronous Side NTD4969N DPAK Single N 30 20 9.0 12.0 8.7 4.0 835 163 0.7 Control Side NTD4970N DPAK Single N 30 20 11.0 15.0 7.7 3.7 743 330 0.9 Control Side NTMS4937N SOIC-8 Single N 30 20 6.5 8.7 17.4 3.3 2563 25 1.0 Synchronous Side NTMS4939N SOIC-8 Single N 30 20 8.4 11.0 12.4 1.9 2000 16 0.7 Synchronous Side NTMS4916N SOIC-8 Single N 30 20 9.0 12.0 14.0 7.0 1468 280 0.7 Control Side NTMS4917N SOIC-8 Single N 30 20 11.0 15.0 10.8 3.5 1132 216 0.7 Control Side NTMS4800N SOIC-8 Single N 30 20 20.0 27.0 7.7 3.2 940 125 1.5 Control Side NTMS4840N SOIC-8 Single N 30 20 24.0 36.0 4.8 1.9 520 70 2.0 Control Side NTMD4820N SOIC-8 Dual N 30 20 20.0 27.0 7.7 3.2 940 125 1.5 DC-DC, Load Switch NTMD4840N SOIC-8 Dual N 30 20 24.0 36.0 4.8 1.9 520 70 1.0 DC-DC, Load Switch NTMS4177P SOIC-8 Single P -30 20 12.0 19.0 29.0 13.0 3100 370 2.0 Load Switch NTMS4176P SOIC-8 Single P -30 25 18.0 30.0 17.0 8.4 1720 256 2.9 Load Switch Page 9 MOSFETs Provide Optimized Efficiency Trench 6 High Efficiency (T6HE) for Servers and Point-of-Load Modules • High Efficiency DC-DC Conversion • Integrated Schottky Lowsides • Lowest RDS(on) in the industry Maximum Rating RDS(ON) (mΩ) VGS VGS = VGS = (V) 10 V 4.5 V Device Package Config Polarity VDS (V) Qg (nC) Qgd (nC) Ciss (pF) Crss (pF) RG (Ω) Applications NTMFS4H01N SO-8FL Single N 25 20 0.7 1.0 39.0 8.5 5693 212 1.2 Synchronous Side NTMFS4H01NF SO-8FL Integ Sch N 25 20 0.7 1.0 37.8 8.0 5538 175.3 1.3 Synchronous Side NTMFS4H013NF* SO-8FL Integ Sch N 25 20 0.9 1.3 28.0 7.5 3780 150 1.0 Synchronous Side NTMFS4H02N SO-8FL Single N 25 20 1.4 2.2 18.0 4.2 2651 103 1.0 Synchronous Side NTMFS4H02NF SO-8FL Integ Sch N 25 20 1.4 2.3 18.7 4.3 2652 94 1.0 Synchronous Side NTTFS4H05N µ8-FL Single N 25 20 3.3 4.8 8.7 1.9 1205 45 1.0 Control Side NTTFS4H07N µ8-FL Single N 25 20 4.8 7.1 5.7 1.3 771 34 1.0 Control Side * Pending 2H14. Switching Devices ON Semiconductor offers a range of switching devices for high speed interface in servers, desktop computing, notebook and netbook computers. Applications include PCI Express, DisplayPort, Gigabit Ethernet and USB 2.0. 2nd LCD Display LCD Panel Server Implementation TMDS DisplayPort Switch Docking Station Connector VGA Switch HDMI/DVI Switch LAN Switch Internal Graphics Processor Gigabit LAN Transceiver USB Power/ Data Switch Stereo Switch Mic Switch Page 10 External Graphics Processor Audio Amp PCIe Switch Processor North Bridge (ICH) South Bridge (MCH) Codec Device Interface Data Rate NCN3612B NCN3411 NCN2612B NCN2411 NS3L500 NCN7200 NCN1188 NS5S1153 NLAS7242 NLAS52231 NLAS4684 PCIe 3.0, DisplayPort 1.2 PCIe 3.0 PCIe 2.0, DisplayPort 1.1 PCIe 2.0 Gigabit Ethernet Gigabit Ethernet USB 2.0 / MHL USB 2.0 USB 2.0 Audio Audio 8 Gb/s 8 Gb/s 5 Gb/s 5 Gb/s 1 Gb/s 1 Gb/s 2.25 Gb/s 480 Mb/s 480 Mb/s 36 MHz 9.5 MHz No Quiescent Channels Current 12 8 12 8 11 11 2 2 2 2 2 250 μA 200 μA 250 μA 200 μA 250 μA 380 μA 21 μA 21 μA 1 μA 1 μA 180 nA Computing Solutions Advanced Load Switches VCC EN PG Smart Load Switch ecoSWITCH™ Integrated Load Switch NCP45xxx Integrated Load Switch Feature • Simple/clean design • No current consumption in standby power mode • Small PCB footprint • Low RDS(ON) due to charge pump driving NMOS • Adjustable soft-start time (SR) • Adjustable integrated discharge • Fault protection • Power rail monitoring & sequencing Thermal, Undervoltage & Short-Circuit Protection Bandgap & Biases Control Logic Charge Pump Delay and Slew Rate Control SR Type VIN GND BLEED VOUT ron (mW) I Max (A) VI Min (V) VI Max (V) IQ (mA) Discharge Slew Rate (ms) Features Package(s) NCP330  26 at 3.3 V 3 1.8 5.5 100 - 2000 Reverse blocking TDFN-4 NCP333  55 at 3.3 V 1.5 1.2 5.5 1 Auto 95 - WLCSP-4 NCP334  47 at 3.3 V 2 1.2 5.5 1 - 71 - WLCSP-4 NCP335  47 at 3.3 V 2 1.2 5.5 1 Auto 71 - WLCSP-4 NCP336  23 at 3.3 V 3 1.2 5.5 1 - 810 - WLCSP-6 NCP337  23 at 3.3 V 3 1.2 5.5 1 Auto 810 - WLCSP-6 NCP338  27 at 1.8 V 2 1 3.6 0.6 Auto 20 - WLCSP-6 Device NCP339 26 at 3.3 V 3 1.2 5.5 2 - 2700 Reverse blocking WLCSP-6 NCP432 50 at 1.8 V 1.5 1 3.6 0.6 - 20 - WLCSP-4 NCP433 50 at 1.8 V 1.5 1 3.6 0.6 Auto 20 - WLCSP-4 NCP434  43 at 1.8 V 2 1 3.6 0.6 - 61 - WLCSP-4 NCP435  43 at 1.8 V 2 1 3.6 0.6 Auto 61 - WLCSP-4 NCP436 23 at 1.8 V 3 1 3.6 1 - 27 - WLCSP-6 NCP437 23 at 1.8 V 3 1 3.6 1 Auto 27 - WLCSP-6 NCP45524  18.0 6 0.5 13.5 - Adj - Power good DFN-8 NCP45525  18.0 6 0.5 13.5 - Adj Adj - DFN-8 NCP45560  2.4 24 0.5 13.5 - Adj Adj Power good; Fault DFN-12 NCP45540  3.9 20 0.5 13.5 - Adj Adj Power good; Fault DFN-12 NCP4543  10.2 7.3 0.5 6 - Adj Adj - QFN-18 NCP4545  4.7 10.5 0.5 6 - Adj Adj - QFN-18 NCP45520  9.5 10.5 0.5 13.5 - Adj - Power good; Fault DFN-8 NCP45521  9.5 10.5 0.5 13.5 - Adj Adj Fault DFN-8 ON Semiconductor Page 11 Evaluating ESD Protection Effectiveness As the design window for protection shrinks, choosing ESD protection products with low Rdyn becomes more important to ensure that clamping voltages do not exceed the safe protection window of new chipsets. Suppliers of ESD protection products must therefore provide information on the effectiveness of the product for protection, not just self-survival levels. 35 Voltage (V) Competition Industry’s lowest clamping voltage for sensitive chipsets! Lowest Vclamp over ESD current window Figure 2. Typical TLP I-V curves from TLP measurements ESD and EMI solutions protect against unwanted signals that interfere with the overall system performance. During a system’s normal operation, these protection devices must not degrade signal integrity, as they must be completely transparent. As the data rates on serial interfaces increase, it is important to demonstrate that protection products do not degrade signal integrity. ON Semiconductor uses several methods to demonstrate that these products do not degrade signal integrity. 25 20 15 10 5 0 -5 0 50 100 Time (ns) 150 200 Figure 1. ESD clamping screenshot TLP creates I-V curves in which each data point is obtained with a square pulse that closely matches an ESD event in terms of current shape and pulse width. TLP pulse lengths are typically 100 ns, with pulse amplitudes up to 40 A. Sample TLP I-V curves are shown in Figure 2, comparing an ON Semiconductor product with a competitor’s product intended for the same application. The ON Semiconductor product turns on at a lower voltage and has significantly lower dynamic resistance than the competitor’s device. The TLP I-V curves and parameters extracted from them Page 12 ESD8004 Maintaining Signal Integrity 30 -10 -50 IEC6100-4-2 Level 4 Current Range ON Semiconductor demonstrates ESD protection effectiveness using two methods: ESD screen shots and Transmission Line Pulse (TLP) measurements. ESD screen shots capture the voltage across the protector when an IEC 61000-4-2 ESD stress is forced through it; typically for an 8 kV contact stress. The screen shot shown in Figure 1 demonstrates how an ON Semiconductor protection device clamps the voltage to below 20 V within 10 ns for an 8 kV stress. Screen shots provide a graphic and intuitive view of a protection product’s effectiveness, especially when comparing two products intended for the same application. Application Note AND8307/D describes the capture of screen shot data. Screen shots do not, however, allow the extraction of fundamental parameters describing the performance of a protection product. Transmission Line Pulse (TLP) provides a more quantitative measurement of ESD protection device effectiveness. can be used to compare the properties of different ESD protection devices and can be used to predict a circuit’s ESD clamping performance. Parameters that can be extracted from TLP data include clamping voltage values for specified current levels, as well as dynamic resistance and voltage intercepts. Application Note AND9006/D gives a full explanation of the TLP technique, and Application Note AND9007/D describes datasheet parameters extracted from TLP measurements. One way in which to measure signal integrity effects is with the S-parameter return and insertion loss plots, such as the ones in Figures 3 and 4. S11 plots measure signal power return loss over frequency, where a small amount of loss shows up as a large –dB value due to the matched impedance of the interconnect. Lower return loss translates into more of the signal, both amplitude and phase, being transferred through the interconnect which can be seen in the S21 plot where the signal power insertion loss is being measured. Both S-parameter plots below show how an ON Semiconductor ESD protection device maintains the lowest loss and best transparency among other top competitor devices. Application Note AND9114/D explains these signal integrity measurements and the ESD device characteristics that affect them in more detail. Computing Solutions Figure 3. Return loss (S11) characteristics of ESD protection solutions Figure 4. Insertion loss (S21) characteristics of ESD protection solutions Surge Protection For lower data-rates (10/100BASE-T, xDSL), ON Semiconductor offers a combination of crowbar devices known as thyristor surge protector devices (TSPD), and transient voltage suppressor (TVS) devices similar to those used in ESD protection. TSPDs offer the advantage of lower clamping voltages and possess higher surge current capability, for both common and differential mode protection. ON Semiconductor 30 25 Voltage (V), Current (A) ON Semiconductor provides solutions for protecting against surge strikes, induced by a lighting strike or power-cross fault. Common interfaces found in a wide variety of consumer and telecommunications/networking equipment are the RJ45 interface for the 10/100BASE-T and 1000BASE-T Ethernet protocols and the RJ11 interface for xDSL protocols. RJ45 consists of four pairs of differential data lines, each carrying a maximum data rate of 250 Mbps in a 1000BASE-T configuration, while RJ11 consists of a single differential data pair. These interfaces are often surge rated to an intra-building standard. Protection for these interfaces mainly consist of ensuring that transverse (metallic or differential) surge strikes do not damage sensitive downstream chips such as PHYs. Differential protection is achieved by connecting shunt protection elements from line-to-line (for each pair of lines) that transfer the incoming hostile surge energy back towards the source. This is different from common mode protection as elements are connected line-to-GND and shunt the surge energy to GND. ESD1014 V(t) ESD1014 I(t) Competitor V(t) Competitor I(t) 20 15 10 5 0 -10 0 10 20 30 40 50 Time (μs) 60 70 80 90 Figure 5. Example of V & I plots in an 8/20 μs surge TVS clamping devices support surge levels for the 8/20 μs pulse and are commonly used on the tertiary or PHY-side to capture and safely dissipate any residual surge pulses. Pictured in Figure 1 is a time-domain plot of the 8/20 μs surge current applied to the ESD1014 TVS from ON Semiconductor. Also shown are timedomain response voltages, clearly showing the superiority of the ON Semiconductor solution in comparison to a competing device. Page 13 USB 3.0/3.1 Two SuperSpeed Pairs, One High Speed Pair, V CC , Low Capacitance ESD Protection Key Requirement • Cap < 0.5 pF (USB 3.0) • Cap < 0.4 pF (USB 3.1) Features • 0.37 pF or less • Flow through routing • Industry leading low clamping voltage versus competitors USB 3.0 Type A Connector USB 3.0 Type A Connector StdA_SSTX+ StdA_SSTX+ Vbus ESD8004/ ESD8104 StdA_SSTX- Vbus ESD8006 D- DGND_DRAIN I/O 1 I/O 2 I/O . . . . . I/O I/O I/O 3 (N-2) (N-1) N ESD7L5.0 Top layer Other layer GND_DRAIN D+ D+ StdA_SSRX+ StdA_SSRX+ GND GND StdA_SSRX- ESD8004/8104 — 0.30 pF, 2 Layer Routing (ESD7L5.0 for D+, D- Lines) = Device ESD8006 ESD8004 ESD8104 ESD7L ESD8351 Without ESD Page 14 Data Lines Capacitance (pF) Package Size (mm) 3 Pair (Tx, Rx, D+, D-) 2 Pair (Tx, Rx) 2 Pair (Tx, Rx) 1 Pair (D+, D-) Single Line 0201 0.25 0.30 0.30 0.50 0.37 UDFN-8 UDFN-10 UDFN-10 SOT-723 X3DFN-2 3.3 x 1.0 2.5 x 1.0 2.5 x 1.0 1.2 x 1.2 0.62 x 0.32 USB 3.1 @ 10 Gb/s StdA_SSTX- StdA_SSRX- ESD8006 — 0.25 pF, 1 Layer Routing With ESD Computing Solutions Thunderbolt Four High Speed Pairs, up to Six Additional Lines, Low Capacitance ESD Key Requirement • Cap < 0.4 pF Thunderbolt Connetctor Top Layer GND Features • 0.25 pF • Flow through routing • Grounds between pairs for reduced cross talk • Industry leading clamping voltage ML0+ ESD8006 ML0– GND ML1+ ML1– GND ML2+ ML2– I/O 1 I/O 2 I/O 4 I/O 5 I/O 7 GND I/O 8 Thunderbolt Connetctor Bottom Layer ESD9X Pins 3, 6, 9, 10 Hot Plug Detect = CONFIG1 ESD8006 ML3+ Device ESD8006 ESD8351 Data Lines Capacitance (pF) Package Size (mm) 3 Pair Single Line 0201 0.25 0.37 UDFN-8 X3DFN2 3.3 x 1.0 0.62 x 0.32 ML3– GND GND CONFIG2 Aux+ Aux– PWR Top layer Bottom layer ESD9X Without ESD8006 Thunderbolt @ 10 Gb/s ON Semiconductor With ESD8006 Page 15 USB 2.0 One High Speed Pair, V CC , Low Capacitance ESD Protection Key Requirement • Cap < 1.5 pF I/O 1 I/O 2 I/O 3 I/O 4 Features • 0.5 - 0.8 pF • 4 low speed + 1 VBUS integrated – can protect up to 2 USB ports • Industry leading low clamping voltage Device Data Lines Capacitance (pF) NUP4114UCL NUP4114UPX NUP4114H NUP3115 ESD7L5.0 ESD7451 ESD7481 2 Pair + Power 2 Pair + Power 2 Pair + Power 1 Pair + ID + Power (D+, D-, ID, VBUS) 1 Pair (D+, D-) Single Line 0402 Single Line 0201 0.50 0.80 0.80 0.80 0.50 0.25 0.25 GND D+ = DVBUS Package Size (mm) SC-88 SOT-563 TSOP-6 UDFN-6 SOT-723 XDFN-2 X3DFN-2 2.0 x 2.1 1.6 x 1.6 3.0 x 2.75 1.6 x 1.6 1.2 x 1.2 1.0 x 0.6 0.62 x 0.32 NUP4114 One High Speed Pair, V CC , Common Mode Filter + ESD Protection Micro USB Connector Key Requirement • Cap < 1.5 pF • Common Mode Filtering GND EMI2121 D+ Features • 0.5 - 0.8 pF • Integrated EMI suppression with ESD protection • Industry leading low clamping voltage Device EMI2121 EMI2124 Data Lines Capacitance @ 2.5 V (pF) 1 Pair + Power (D+, D-, VBUS) 1 Pair + ID + Power (D+, D-, ID, VBUS) 0.9 0.9 DVBUS Top layer Other layer CM Attenuation DM Bandwidth @ 800 MHz (–dB) F3dB (GHz) Package –25 –25 ID 2.5 2.5 WQFN WQFN Size (mm) 2.2 x 2.0 x 0.75 2.2 x 2.0 x 0.75 0 -5 -10 dB -15 -20 -25 -30 USB 2.0 @ 480 Mb/s Page 16 -35 1.E+06 Suppresses Common Mode Noise Deeper than Competing Passive Solution Common Mode Differential Mode 1.E+07 1.E+08 1.E+09 Frequency Computing Solutions HDMI, Display Port Four High Speed Pairs, Up to Six Additional Interface Lines, Low Capacitance ESD Key Requirement • Cap < 0.5 pF (HDMI 1.3/1.4) • Cap < 0.4 pF (HDMI 2.0) I/O 1 I/O 2 Device ESD8104 Features • 0.3 pF ESD protection • Flow through routing in high speed lines • Industry leading low clamping voltage ESD8104 I/O . . . . . I/O I/O I/O 3 (N-2) (N-1) N ESD8040 ESD7451 ESD7481 = HDMI Type-A Connector Data Lines Capacitance (pF) Package Size (mm) 0.30 UDFN-10 2.5 x 1.0 0.30 UDFN-18 5.5 x 1.5 0.25 0.25 XDFN-2 X3DFN-2 1.0 x 0.6 0.62 x 0.32 2 Pair 4 Pair + CEC, SDL, SDA, 5V,HPD Single Line 0402 Single Line 0201 ESD8040 HDMI Type-A Connector D2+ D2+ GND GND D2- D2- D1+ D1+ GND GND D1- D1- ESD8104 D0+ D0+ GND GND D0- D0- CLK+ CLK+ GND GND CLK- CLK- CEC CEC N/C (or HEC_DAT - HDMI1.4) N/C (or HEC_DAT - HDMI1.4) SCL SCL SDA SDA GND GND 5V 5V HPD (and HEC_DAT - HDMI1.4) HPD (and HEC_DAT - HDMI1.4) • MediaGuard fully integrated solution • Includes ethernet protection (HDMI1.4) • Backdrive current protection NUP4114 Without ESD ON Semiconductor HDMI 2.0 @ 6.0 Gb/s Top layer Other layer With ESD Page 17 Ethernet: 10/100BASE-T, 1000BASE-TX, and Gigabit Four Pairs, Low Capacitance Surge and ESD Protection The 1000BASE-T or Gigabit Ethernet interface operating at higher bitrates is susceptible to ESD strikes, cable-discharge events and lightning-induced transients. Our products help meet IEC 61000-4-5, GR-1089-CORE and other Standards. Features • Line-to-line capacitance < 3 pF • Vclamp (25 A surge) < 11 V • IEC 61000-4-2 rating > 30 kV • No latching danger • Surge rating maintained to 125°C Typical Application RJ45 TRANSFORMER CLC03 8 TPOPD C1 C+ VDD C5 ESD1014 TPOND BLC03 1 1000BASE-T ETHERNET TRANSCEIVER C5 8 TPONC C1 B+ VDD 1 TPOPC 8 TPONB C1 ALC03 ESD1014 TPOPB A+ VDD C5 1 Benefits • Compatible with Gb Ethernet and beyond • Enhanced protection for downstream electronics • Accommodates operating transients above 3.3 V • Small form-factor allows integration into connectors TPONA C1 8 1 TPOPA D+ VDD C5 DLC03 Line Side : LC03-6 (optional) Transformer Side: ESD1014 Protection against metallic (transverse) strikes TD1+ TD2+ MDI0+ MDI0– TD2– MDI1+ MDI1– MDI2+ MDI2– TD3+ MDI3+ MDI3– TD3– TRANSFORMER PHY TD1– Through Board TD4+ Top layer Other layer TD4– With ESD1014 Voltage (V), Current (A) 30 25 8/20 μs Surge Current Competitor Voltage 20 15 ESD1014 Voltage 10 5 0 -10 0 10 20 30 Time (μs) Line-to-Line Surge Page 18 40 50 60 Signal Integrity for Gigabit Ehternet Computing Solutions Serial EEPROMs Features EasyPRO™ is a user-friendly, portable programming tool for ON Semiconductor serial EEPROMs (I2C, SPI, Microwire) • Broad density range: 1 kb to 2 Mb • Wide operating Vcc range: 1.8/1.7 V to 5.5 V • High endurance: 1 million program/erase cycles • Wide temperature range: industrial and extended EEPROMs Data Transmission Standard I2C SPI Microwire Device Density Organization* VCC Min (V) VCC Max (V) fCLK Max (MHz) Package(s) CAT24M01 CAT24C512 CAT24C256 CAT24C128 CAT24C64 CAT24C32 CAT24C16 CAT24C08 CAT24C04 CAT24C02 CAT25M02 CAT25M01 CAT25512 CAT25256 CAT25128 CAT25640 CAT25320 CAT25160 CAT25080 CAT25040 CAT25020 CAT25010 CAT93C86 CAT93C86B CAT93C76 CAT93C76B CAT93C66 CAT93C56 CAT93C46 CAT93C46B 1 Mb 512 kb 256 kb 128 kb 64 kb 32 kb 16 kb 8 kb 4 kb 2 kb 2 Mb 1 Mb 512 kb 256 kb 128 kb 64 kb 32 kb 16 kb 8 kb 4 kb 2 kb 1 kb 16 kb 16 kb 8 kb 8 kb 4 kb 2 kb 1 kb 1 kb 128k x 8 64k x 8 32k x 8 16k x 8 8k x 8 4k x 8 2k x 8 1k x 8 512 x 8 256 x 8 256k x 8 128k x 8 64k x 8 32k x 8 16k x 8 8k x 8 4k x 8 2k x 8 1k x 8 512 x 8 256 x 8 128 x 8 2k x 8 / 1k x 16 2k x 8 / 1k x 16 1k x 8 / 512 x 16 1k x 8 / 512 x 16 512 x 8 / 256 x 16 256 x 8 / 128 x 16 128 x 8 / 64 x 16 128 x 8 / 64 x 16 1.8 1.8 1.8 1.8 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 / 1.65 1.8 1.8 / 1.65 1.8 1.8 1.8 1.8 / 1.65 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 1 1 1 1 1 1 0.4 0.4 0.4 0.4 10 10 20 20 20 20 20 20 20 20 20 20 3 4 3 4 2 2 2 4 SOIC-8, TSSOP-8, UDFN-8 SOIC-8, TSSOP-8, UDFN-8 SOIC-8, TSSOP-8, UDFN-8 SOIC-8, TSSOP-8, UDFN-8 SOIC-8, TSSOP-8, UDFN-8 SOIC-8, TSSOP-8, UDFN-8; WLCSP-5 SOIC-8, TSSOP-8, UDFN-8, TSOT23-5, WLCSP-4, WLCSP-5 SOIC-8, TSSOP-8, UDFN-8, TSOT23-5, WLCSP-4, WLCSP-5 SOIC-8, TSSOP-8, UDFN-8, TSOT23-5, WLCSP-4, WLCSP-5 SOIC-8, TSSOP-8, UDFN-8, TSOT23-5, WLCSP-4, WLCSP-5 SOIC-8 SOIC-8, TSSOP-8 SOIC-8, TSSOP-8, UDFN-8 SOIC-8, TSSOP-8, UDFN-8 SOIC-8, TSSOP-8, UDFN-8 SOIC-8, TSSOP-8, UDFN-8 SOIC-8, TSSOP-8, UDFN-8 SOIC-8, TSSOP-8, UDFN-8 SOIC-8, TSSOP-8, UDFN-8 SOIC-8, TSSOP-8, UDFN-8 SOIC-8, TSSOP-8, UDFN-8 SOIC-8, TSSOP-8, UDFN-8 SOIC-8 SOIC-8, TSSOP-8, UDFN-8 SOIC-8, TSSOP-8 SOIC-8, TSSOP-8, UDFN-8 SOIC-8, TSSOP-8 SOIC-8, TSSOP-8 SOIC-8, TSSOP-8 SOIC-8, TSSOP-8, UDFN-8 * Organization for Microwire devices is selectable. Application Specific EEPROMs Data Transmission Standard Device Density Organization VCC Min (V) VCC Max (V) fCLK Max (MHz) I2C I2C 2 I C/SMBus CAT24C208 CAT34C04* CAT34TS04 8 kb 4 kb 4 kb 1024 x 8 512 x 8 512 x 8 2.5 1.7 2.2 5.5 5.5 5.5 0.4 1 1 I2C CAT34C02 2 kb 256 x 8 1.7 5.5 0.4 I2C/SMBus CAT34TS02 2 kb 256 x 8 3.0 3.6 0.4 Package(s) Notes SOIC-8 UDFN-8 TDFN-8, UDFN-8 UDFN-8, TDFN-8, TSSOP-8 TDFN-8, UDFN-8 VESA™ dual-port serial EEPROM Serial Presence Detect (SPD) I2C EEPROM for DDR4 DIMM 4 kb SPD EEPROM w/ Temperature Sensor for DDR4 DIMM Serial Presence Detect (SPD) I2C EEPROM for DDR3 DIMM 2 kb SPD EEPROM w/ Temperature Sensor for DDR3 DIMM * Pending 3Q14. ON Semiconductor Page 19 Clock Synthesizers for High Performance Computing Features • Uses 25 MHz fundamental mode parallel resonant crystal • PCI-e Gen 1,2 & 3 jitter complaint HCSL differential outputs • NB3N50134 features configurable spread spectrum outputs • NB3N51044 features individual OE control signal for each output, PLL bypass mode and an Input multiplexer • NB3N51054 features I2C interface for OE control and configurable spread spectrum outputs • 3.3 V supply VDD X1/CLK 25 MHz Clock or Crystal X2 Clock Buffer Crystal Oscillator Charge Pump Phase Detector HSCL Output VCO HSCL Output M GND S0 S1 OE CLK0 CLK0 CLK1 CLK1 IREF NB3N5573 Simplified Logic Diagram Number of Inputs Input Type fin Typ (MHz) Number of Outputs Output Type fout Typ (MHz) Spread Spectrum Outputs Package NB3N3002 1 Crystal; LVCMOS; LVTTL 25 1 HCSL 25; 100; 125; 200 No TSSOP-16 NB3N5573 1 Crystal; LVCMOS; LVTTL 25 2 HCSL 25; 100; 125; 200 No TSSOP-16 NB3N51032 1 Crystal; LVCMOS; LVTTL 25 2 HCSL 25; 100; 125; 200 No TSSOP-16 NB3N51034 1 Crystal; LVCMOS; LVTTL 25 4 HCSL 100: 200 Yes TSSOP-20 NB3N51044 2 Crystal; LVCMOS; LVTTL 25 4 HCSL 100: 125 No TSSOP-28 NB3N51054 1 Crystal; LVCMOS; LVTTL 25 4 HCSL 100 Yes TSSOP-24 Device Page 20 Computing Solutions Fanout Buffers for High Performance Computing Features • DC to 400 MHz • Single ended input: LVPECL, LVDS, HCSL • Typical input clock frequencies: 100, 133, 166, or 400 MHz • Typical propagation delay: 800 ps • HCSL differential outputs • Integrated 50 Ω input termination resistors • IREF pin enables setting of output drive • Additive phase jitter 0.1 ps typical @ 100 MHz; PCI-e Gen 3 jitter complaint Q0 Q0 VTCLK Q1 Q1 CLK CLK Q19 Q19 VTCLK Q20 VCC IREF GND Q20 RREF NB3N121K Logic Diagram Ratio Additive tJitter(RMS) Typ (ps) tskew(o-o) Max (ps) tpd Typ (ns) tR & tF Max (ps) fmaxClock Typ (MHz) Package NB3N106K 1:6 0.1 100 0.8 400 400 QFN-24 NB3N108K 1:8 0.1 100 0.8 400 400 QFN-32 NB3N111K 1:10 0.1 100 0.8 400 400 QFN-32 NB3N121K 1:21 0.1 100 0.8 700 400 QFN-52 NB4N111K 1:10