NCS199A2SQT2G

NCS199A1, NCS199A2, NCS199A3 Current-Shunt Monitor, Voltage Output, Bi-Directional Zero-Drift www.onsemi.com Features • • • • • • • • • Wide Common−Mode Input Range −0.3 V to 26 V Supply Voltage Range from 2.7 V to 26 V Low Offset Voltage ±150 mV Max Low Offset Drift (0.5 mV/°C) Low Gain Error (max 1.5%) Rail−to−rail Input and Output Capability Low Current Consumption (typ 65 mA, 100 mA max) NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These are Pb−free Devices Typical Applications • • • • Current Sensing (High−Side/Low−Side) Automotive Telecom Sensors SC70−6 SQ SUFFIX CASE 419B PIN CONNECTIONS REF 1 GND 2 VS 3 − + The NCS199A1, NCS199A2 and NCS199A3 are voltage output current shunt monitors that can measure voltage across shunts at common−mode voltages from −0.3 V to 26 V, independent of supply voltage. Three fixed gains are available: 50 V/V, 100 V/V or 200 V/V. The low offset of the zero−drift architecture enables current sensing with maximum drops across the shunt as low as 10 mV full−scale. The devices can operate from a single +2.7 V to +26 V power supply, drawing a maximum of 100 mA of supply current. All versions are specified over the extended operating temperature range (–40°C to +125°C). 6 OUT 5 IN− 4 IN+ MARKING DIAGRAM 6 XXXMG G 1 XXX = Specific Device Code (See page 4) M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Product Gain R3−R4 R1−R2 NCS199A1 50 20 kW 1 MW NCS199A2 100 10 kW 1 MW NCS199A3 200 5 kW 1 MW V OUT + ǒI LOAD R SHUNTǓGAIN ) V REF ORDERING INFORMATION See detailed ordering, marking and shipping information on page 4 of this data sheet. This document contains information on some products that are still under development. ON Semiconductor reserves the right to change or discontinue these products without notice. © Semiconductor Components Industries, LLC, 2016 July, 2016 − Rev. 1 1 Publication Order Number: NCS199/D NCS199A1, NCS199A2, NCS199A3 RSHUNT Supply Load NCS199Ax R1 R3 IN− − IN+ + Output OUT Reference Voltage R4 REF VS +2.7 V to +26 V GND R2 0.01 mF To 0.1 mF Figure 1. Application Schematic Table 1. MAXIMUM RATINGS Rating Symbol Supply Voltage (Note 1) Analog Inputs Differential (VIN+)−(VIN−) Value Unit VS +26 V VIN+,VIN− −26 to +26 V Common−Mode (Note 2) GND−0.3 to +26 REF Input VREF GND−0.3 to ( Vs) +0.3 V Output (Note 2) VOUT GND−0.3 to ( Vs) +0.3 V 5 mA Maximum Junction Temperature TJ(max) +150 °C Storage Temperature Range TSTG −65 to +150 °C ESD Capability, Human Body Model (Note 3) HBM ±3000 V ESD Capability, Machine Model (Note 3) MM ±100 V CDM ±1000 V Input Current into Any Pin (Note 2) Charged Device Model (Note 3) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe operating parameters. 2. Input voltage at any pin may exceed the voltage shown if current at that pin is limited to 5 mA. 3. This device series incorporates ESD protection and is tested by the following methods ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115) ESD Charged Device Model tested per AEC−Q100−011. Latchup Current Maximum Rating: 50 mA per JEDEC standard: JESD78 Table 2. THERMAL CHARACTERISTICS Rating Thermal Characteristics, SC70 (Note 4) Thermal Resistance, Junction−to−Air (Note 5) Symbol Value Unit RqJA 250 °C/W 4. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe operating parameters. 5. Values based on copper area of 645 mm2 (or 1 in2) of 1 oz copper thickness and FR4 PCB substrate. Table 3. RECOMMENDED OPERATING RANGES Rating Symbol Min Max Unit Supply Voltage VS 2.7 26 V Ambient Temperature TA −40 125 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NCS199A1, NCS199A2, NCS199A3 Table 4. ELECTRICAL CHARACTERISTICS Boldface limits apply over the specified temperature range, TA = −40°C to 125°C, guaranteed by characterization and/or design. At TA = +25°C, VSENSE = VIN+ − VIN−, VS = +5 V, VIN+ = 12 V, and VREF = VS/2, unless otherwise noted. Parameter Test Conditions Symbol Min Typ Max Unit GAIN NCS199A1 NCS199A2 NCS199A3 Gain Error VSENSE = −5 mV to 5 mV Gain Error vs. Temperature Nonlinearity Error Maximum Capacitive Load G 50 100 200 V/V Ge +0.2 +1.5 % 20 ppm/°C TA = −10°C to 125°C 7 VSENSE = −5 mV to 5 mV ±0.01 % No sustained oscillation 1 nF VOLTAGE OFFSET Offset Voltage Offset Drift NCS199A1/2/3 NCV199A2 (RTI Note 6), VSENSE = 0 mV NCS199A2, NCS199A3 NCS199A1 VOS ±5.0 ±20 ±150 ±200 mV dV/dT 0.1 0.5 0.6 2.0 mV/°C 60 mA 26 V INPUT Input Bias Current VSENSE = 0 mV Common−Mode Input Voltage Range Common−Mode Rejection Ratio Common−Mode Rejection Ratio Common−Mode Rejection Ratio NCS199A2, NCS199A3 NCS199A1 NCV199A2 IIB VCM −0.3 CMRR 100 115 dB VS = 3.3 V, VIN+ = 3 V to +26 V, VSENSE = 0 mV 100 115 dB VS = 3.3 V, VIN+ = 0 V to +26 V, VSENSE = 0 mV (TA = −10°C to 85°C) 100 120 dB 97 110 dB VS = 3.3 V, VIN+ = 3 V to +26 V, VSENSE = 0 mV 97 110 dB VS = 3.3 V, VIN+ = 0 V to +26 V, VSENSE = 0 mV (TA = −10°C to 85°C) 97 115 dB 95 115 dB VS = 3.3 V, VIN+ = 3 V to +26 V, VSENSE = 0 mV 95 115 dB VS = 3.3 V, VIN+ = 0 V to +26 V, VSENSE = 0 mV (TA = −10°C to 85°C) 95 120 dB VS = 5 V, VIN+ = 2 V to +26 V, VSENSE = 0 mV VS = 5 V, VIN+ = 2 V to +26 V, VSENSE = 0 mV VS = 5 V, VIN+ = 2 V to +26 V, VSENSE = 0 mV CMRR CMRR OUTPUT Output Voltage Low Referenced from GND RL = 10 kΩ to Ground VOL 5 50 mV Output Voltage High Referenced from VS RL = 10 kΩ to Ground VOH 0.05 0.2 V CLOAD = 10 pF, NCS199A1 CLOAD = 10 pF, NCS199A2 CLOAD = 10 pF, NCS199A3 BW 100 60 40 kHz SR 0.4 V/ms en 35 nV/ǠHz DYNAMIC PERFORMANCE Bandwidth (f−3dB) Slew Rate NOISE Spectral Density, 1 kHz (RTI Note 6) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. RTI = referenced−to−input. www.onsemi.com 3 NCS199A1, NCS199A2, NCS199A3 Table 4. ELECTRICAL CHARACTERISTICS Boldface limits apply over the specified temperature range, TA = −40°C to 125°C, guaranteed by characterization and/or design. At TA = +25°C, VSENSE = VIN+ − VIN−, VS = +5 V, VIN+ = 12 V, and VREF = VS/2, unless otherwise noted. Parameter Test Conditions Symbol Min 2.7 Typ Max Unit 26 V 65 100 mA 115 mA ±10 mV/V POWER SUPPLY Operating Voltage Range VSENSE = 0 mV Vs Quiescent Current VSENSE = 0 mV IDD Quiescent Current over Temperature VSENSE = 0 mV Power Supply Rejection Ratio VS = +2.7 V to +26 V, VIN+ =18 V, VSENSE = 0 mV PSRR ±0.1 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. RTI = referenced−to−input. ORDERING INFORMATION Device Gain Marking NCS199A1SQT2G 50 ACQ NCS199A2SQT2G 100 ACR NCS199A3SQT2G 200 ACP NCV199A2SQT2G* (In Development)** 100 TBD NCV199A3SQT2G* (In Development)** 200 TBD Package Shipping † SC70−6 (Pb−Free) 3000 / Tape and Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D *NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. ** Contact local sales office for availability. www.onsemi.com 4 NCS199A1, NCS199A2, NCS199A3 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 2X aaa H D D H A D 6 5 GAGE PLANE 4 1 2 L L2 E1 E DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. e B 6X ddd TOP VIEW DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd b C A-B D M A2 DETAIL A A 6X ccc C A1 SIDE VIEW C SEATING PLANE END VIEW c MILLIMETERS MIN NOM MAX −−− −−− 1.10 0.00 −−− 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 INCHES NOM MAX −−− 0.043 −−− 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN −−− 0.000 0.027 0.006 0.003 0.070 0.078 0.045 RECOMMENDED SOLDERING FOOTPRINT* 6X 6X 0.30 0.66 2.50 0.65 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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