NCS2004AMUTAG

NCS2004, NCS2004A Operational Amplifier, Rail-to-Rail, 3.5 MHz, Wide Supply The NCS2004 operational amplifier provides rail−to−rail output operation. The output can swing within 70 mV to the positive rail and 30 mV to the negative rail. This rail−to−rail operation enables the user to make optimal use of the entire supply voltage range while taking advantage of 3.5 MHz bandwidth. The NCS2004 can operate on supply voltage as low as 2.5 V over the temperature range of −40°C to 125°C. The high bandwidth provides a slew rate of 2.4 V/ms while only consuming a typical 390 mA of quiescent current. Likewise the NCS2004 can run on a supply voltage as high as 16 V making it ideal for a broad range of battery operated applications. Since this is a CMOS device it has high input impedance and low bias currents making it ideal for interfacing to a wide variety of signal sensors. In addition it comes in either a small SC−88A or UDFN package allowing for use in high density PCB’s. Features • • • • • • • • • www.onsemi.com MARKING DIAGRAMS SC−88A (SC−70−5) SN SUFFIX CASE 419A ADK MG G ADK = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1 6 UDFN6 CASE 517AP xx MG G 1 Rail−To−Rail Output Wide Bandwidth: 3.5 MHz High Slew Rate: 2.4 V/ms Wide Power Supply Range: 2.5 V to 16 V Low Supply Current: 390 mA Low Input Bias Current: 45 pA Wide Temperature Range: −40°C to 125°C Small Packages: 5−Pin SC−88A and UDFN6 1.6x1.6 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant xx = Specific Device Code AA for NCS2004 AC for NCS2004A M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS 5 VDD IN+ 1 + − VSS 2 IN− 4 OUT 3 Applications • Notebook Computers • Portable Instruments SC−88A (Top View) VSS 1 NC 2 IN− 3 6 OUT − + 5 VDD 4 IN+ UDFN (Top View) ORDERING INFORMATION Device Package Shipping† NCS2004SQ3T2G SC−88A (Pb−Free) 3000 / Tape & Reel NCS2004MUTAG, NCS2004AMUTAG UDFN6 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 October, 2015 − Rev. 9 1 Publication Order Number: NCS2004/D NCS2004, NCS2004A MAXIMUM RATINGS Symbol Rating Value Unit 16.5 V Input Differential Voltage $Supply Voltage V VI Input Common Mode Voltage Range −0.2 V to (VDD + 0.2 V) V II Maximum Input Current $10 mA IO Output Current Range $100 mA Continuous Total Power Dissipation (Note 1) 200 mW TJ Maximum Junction Temperature 150 °C qJA Thermal Resistance 333 °C/W Tstg Operating Temperature Range (free−air) −40 to 125 °C Tstg Storage Temperature VDD Supply Voltage VID VESD −65 to 150 °C Mounting Temperature (Infrared or Convection − 20 sec) 260 °C Machine Model Human Body Model 300 2000 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Continuous short circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45 mA over long term may adversely affect reliability. Shorting output to either V+ or V− will adversely affect reliability. DC ELECTRICAL CHARACTERISTICS (VDD = 2.5 V, 3.3 V, 5 V and $5 V, TA = 25°C, RL w 10 kW unless otherwise noted) Parameter Symbol Input Offset Voltage (NCS2004) VIO Input Offset Voltage (NCS2004A) VIO Offset Voltage Drift ICVOS VIC = VDD/2, VO = VDD/2, RL = 10 kW, RS = 50 W Common Mode Rejection Ratio CMRR 0 V v VIC v VDD − 1.35 V, RS = 50 W Conditions Min VIC = VDD/2, VO = VDD/2, RL = 10 kW, RS = 50 W 5.0 mV 3.0 TA = −40°C to +125°C 5.0 VDD = 2.5 V 55 mV 2.0 mV/°C 94 dB 52 VDD = 5 V 65 130 62 0 V v VIC v VDD − 1.35 V, RS = 50 W AVD 0.5 7.0 TA = −40°C to +125°C Large Signal Voltage Gain Unit VIC = VDD/2, VO = VDD/2, RL = 10 kW, RS = 50 W 0 V v VIC v VDD − 1.35 V, RS = 50 W PSRR Max TA = −40°C to +125°C TA = −40°C to +125°C Power Supply Rejection Ratio Typ VDD = $5 V 69 TA = −40°C to +125°C 66 VDD = 2.5 V to 16 V, VIC = VDD/2, No Load 70 TA = −40°C to +125°C 65 VDD = 2.5 V VO(pp) = VDD/2, RL = 10 kW TA = −40°C to +125°C 90 140 135 dB 130 dB 76 VDD = 3.3 V VO(pp) = VDD/2, RL = 10 kW TA = −40°C to +125°C 92 123 76 VDD = 5 V VO(pp) = VDD/2, RL = 10 kW TA = −40°C to +125°C 95 127 86 VDD = $5 V VO(pp) = VDD/2, RL = 10 kW TA = −40°C to +125°C 95 90 www.onsemi.com 2 130 NCS2004, NCS2004A DC ELECTRICAL CHARACTERISTICS (VDD = 2.5 V, 3.3 V, 5 V and $5 V, TA = 25°C, RL w 10 kW unless otherwise noted) Parameter Symbol Input Bias Current IB Input Offset Current IIO Conditions VDD = 5 V, VIC = VDD/2, VO = VDD/2, RS = 50 W VDD = 5 V, VIC = VDD/2, VO = VDD/2, RS = 50 W Differential Input Resistance ri(d) Common−mode Input Capacitance CIC f = 21 kHz Output Swing (High−level) VOH VIC = VDD/2, IOH = −1 mA Min TA = 25°C Unit 45 150 pA 1000 TA = 25°C 45 TA = 125°C TA = −40°C to +125°C 150 pA 1000 2.35 1000 GW 8.0 pF 2.43 V 2.28 VDD = 3.3 V TA = −40°C to +125°C 3.15 3.21 3.00 VDD = 5 V VIC = VDD/2, IOH = −1 mA TA = −40°C to +125°C 4.8 4.93 4.75 VDD = $5 V VIC = VDD/2, IOH = −1 mA TA = −40°C to +125°C 4.92 4.96 4.9 VDD = 2.5 V VIC = VDD/2, IOH = −5 mA TA = −40°C to +125°C 1.7 V 2.14 1.5 VDD = 3.3 V VIC = VDD/2, IOH = −5 mA TA = −40°C to +125°C 2.5 2.89 2.1 VDD = 5 V VIC = VDD/2, IOH = −5 mA TA = −40°C to +125°C 4.5 4.68 4.35 VDD = $5 V VIC = VDD/2, IOH = −5 mA TA = −40°C to +125°C VOL Max TA = 125°C VDD = 2.5 V VIC = VDD/2, IOH = −1 mA Output Swing (Low−level) Typ 4.7 4.78 4.65 VDD = 2.5 V VIC = VDD/2, IOL = −1 mA 0.03 TA = −40°C to +125°C 0.15 V 0.22 VDD = 3.3 V VIC = VDD/2, IOL = −1 mA 0.03 TA = −40°C to +125°C 0.15 0.22 VDD = 5 V VIC = VDD/2, IOL = −1 mA 0.03 TA = −40°C to +125°C 0.1 0.15 VIC = VDD/2, IOL = −1 mA VDD = $5 V 0.05 VDD = 2.5 V 0.15 TA = −40°C to +125°C 0.08 0.1 VIC = VDD/2, IOL = −5 mA TA = −40°C to +125°C 0.7 1.1 VDD = 3.3 V VIC = VDD/2, IOL = −5 mA 0.13 TA = −40°C to +125°C 0.7 1.1 VIC = VDD/2, IOL = −5 mA VDD = 5 V 0.13 VDD = $5 V 0.16 TA = −40°C to +125°C 0.4 0.5 VIC = VDD/2, IOL = −5 mA TA = −40°C to +125°C 0.3 0.35 www.onsemi.com 3 V NCS2004, NCS2004A DC ELECTRICAL CHARACTERISTICS (VDD = 2.5 V, 3.3 V, 5 V and $5 V, TA = 25°C, RL w 10 kW unless otherwise noted) Parameter Symbol Output Current IO Conditions VO = 0.5 V from rail, VDD = 2.5 V VO = 0.5 V from rail, VDD = 5 V VO = 0.5 V from rail, VDD = 10 V Power Supply Quiescent Current IDD VO = VDD/2 Min Typ Positive rail 4.0 Negative rail 5.0 Positive rail 7.0 Negative rail 8.0 Positive rail 13 Max mA Negative rail 12 VDD = 2.5 V 380 560 VDD = 3.3 V 385 620 VDD = 5 V 390 660 VDD = 10 V 400 800 TA = −40°C to +125°C Unit mA 1000 AC ELECTRICAL CHARACTERISTICS (VDD = 2.5 V, 5 V, & $5 V, TA = 25°C, and RL w 10 kW unless otherwise noted) Parameter Symbol Unity Gain Bandwidth UGBW Slew Rate at Unity Gain SR Conditions RL = 2 kW, CL = 10 pF VO(pp) = VDD/2, RL = 10 kW, CL = 50 pF Min VDD = 2.5 V 3.2 VDD = 5 V to 10 V 3.5 VDD = 2.5 V TA = −40°C to +125°C VDD = 5 V TA = −40°C to +125°C VDD = $5 V TA = −40°C to +125°C Gain Margin Settling Time to 0.1% Total Harmonic Distortion plus Noise tS THD+N en Input−Referred Current Noise in MHz V/mS 1.45 2.3 1.8 2.6 1.3 RL = 2 kW, CL = 10 pF 45 ° RL = 2 kW, CL = 10 pF 14 dB mS V−step(pp) = 1 V, AV = −1, RL = 2 kW, CL = 10 pF VDD = 2.5 V 2.9 V−step(pp) = 1 V, AV = −1, RL = 2 kW, CL = 68 pF VDD = 5 V, $5 V 2.0 AV = 1 0.004 AV = 10 0.04 AV = 100 0.3 AV = 1 0.004 AV = 10 0.04 AV = 100 0.03 VDD = 2.5 V, VO(pp) = VDD/2, RL = 2 kW, f = 10 kHz VDD = 5 V, $ 5 V, VO(pp) = VDD/2, RL = 2 kW, f = 10 kHz Input−Referred Voltage Noise 2.0 Unit 1.2 VO(pp) = VDD/2, RL = 10 kW, CL = 50 pF qm 1.35 Max 1 VO(pp) = VDD/2, RL = 10 kW, CL = 50 pF Phase Margin Typ f = 1 kHz 30 f = 10 kHz 20 f = 1 kHz 0.6 www.onsemi.com 4 % nV/√Hz fA/√Hz 0 RL = 2 kW 25°C −10 −20 CMRR (dB) −30 −40 −50 2.5 V −60 5V 2.7 V −70 −80 −90 10 V 10 100 1k 10k 100k 1M INPUT BIAS AND OFFSET CURRENT (pA) NCS2004, NCS2004A 250 200 150 100 0 Input Offset −50 −100 −40 −25 −10 20 35 50 65 80 95 110 125 FREE AIR TEMPERATURE (°C) Figure 1. CMRR vs. Frequency Figure 2. Input Bias and Offset Current vs. Temperature 2.5 VDD = 2.5 V HIGH LEVEL OUTPUT VOLTAGE (V) LOW LEVEL OUTPUT VOLTAGE (V) 5 FREQUENCY (Hz) 2.5 25°C 105°C 2 1.5 −40°C 1 0.5 0 10 0 20 30 40 50 60 70 2 −40°C 1.5 25°C 105°C 1 0.5 0 0 10 20 30 40 50 LOW LEVEL OUTPUT CURRENT (mA) Figure 3. 2.5 V VOL vs. Iout Figure 4. 2.5 V VOH vs. Iout 3.3 HIGH LEVEL OUTPUT VOLTAGE (V) 25°C 2.7 105°C 2.4 2.1 1.8 −40°C 1.5 1.2 0.9 0.6 0.3 0 60 LOW LEVEL OUTPUT CURRENT (mA) VDD = 3.3 V 3 0 VDD = 2.5 V 80 3.3 LOW LEVEL OUTPUT VOLTAGE (V) Input Bias 50 10 20 30 40 50 60 70 80 90 80 VDD = 3.3 V 3 2.7 2.4 105°C 2.1 1.8 1.5 25°C 1.2 0.9 −40°C 0.6 0.3 0 0 10 20 30 40 50 60 70 HIGH LEVEL OUTPUT CURRENT (mA) LOW LEVEL OUTPUT CURRENT (mA) Figure 5. 3.3 V VOL vs. Iout Figure 6. 3.3 V VOH vs. Iout www.onsemi.com 5 70 80 90 NCS2004, NCS2004A 5 VDD = 5.0 V HIGH LEVEL OUTPUT VOLTAGE (V) LOW LEVEL OUTPUT VOLTAGE (V) 5 105°C 4 3 −40°C 25°C 2 1 0 0 10 20 30 40 50 60 70 3 −40°C 2 25°C 105°C 1 0 0 10 20 30 40 50 60 70 LOW LEVEL OUTPUT CURRENT (mA) HIGH LEVEL OUTPUT CURRENT (mA) Figure 7. VOL vs. Iout Figure 8. VOH vs. Iout 80 10 VDD = 10 V 9 HIGH LEVEL OUTPUT VOLTAGE (V) LOW LEVEL OUTPUT VOLTAGE (V) 4 80 10 8 7 6 105°C 5 4 25°C 3 2 1 −40°C 0 0 10 20 30 40 50 60 70 80 VDD = 10 V 9 8 7 6 25°C 5 4 −40°C 3 105°C 2 1 0 0 10 20 30 40 50 60 70 80 90 100 110 120 LOW LEVEL OUTPUT CURRENT (mA) HIGH LEVEL OUTPUT CURRENT (mA) Figure 9. 10 V VOL vs. Iout Figure 10. 10 V VOH vs. Iout 12 600 AV = 10 RL = 2k CL = 10 pF TA = 25°C THD = 5% VDD = 10 V 10 9 8 105°C SUPPLY CURRENT / Ch (mA) 11 Vout P−P (V) VDD = 5.0 V 7 6 VDD = 5 V 5 4 3 VDD = 2.7 V 2 VDD = 2.5 V 1 0 0.01 0.1 1 10 100 1k 500 −40°C 300 200 100 0 0 10k 25°C 400 2 4 6 8 10 12 14 16 FREQUENCY (kHz) SUPPLY VOLTAGE (V) Figure 11. Peak−to−Peak Output vs. Supply vs. Frequency Figure 12. Supply Current vs. Supply Voltage www.onsemi.com 6 18 NCS2004, NCS2004A 0 RL = 2 kW, Input = 200 mVpp, AV = 1, VDD = 2.5 V to 10 V, TA = 25°C −10 −20 PSRR (dB) −30 −40 −50 −60 −70 −80 −90 −100 −110 100 1k 10k 100k FREQUENCY (Hz) Figure 13. PSRR vs. Frequency 140 180 OPEN LOOP GAIN (dB) 100 80 Gain 10 V 60 40 Gain 5V 20 135 Phase 5V 90 Phase 10 V 45 Gain 2.7 V 0 PHASE MARGIN (°C) Phase 2.7 V 120 −20 1 10 100 1k 10k 100k 0 10M 1M FREQUENCY (Hz) Figure 14. Open Loop Gain and Phase vs. Frequency 4.5 4 10 V 5V 3.5 3 2.7 V SR+ @ 105°C SR− @ 105°C SLEW RATE (V/ms) FREQUENCY (MHz) 4 SR+ @ 25°C 2.5 V 2.5 3 2 SR− @ 25°C SR− @ −40°C 1 SR+ @ −40°C RL = 2k CL = 10 pF 2 −40 0 −20 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 3 TEMPERATURE (°C) SUPPLY VOLTAGE (V) Figure 15. Gain Bandwidth Product vs. Temperature Figure 16. Slew Rate vs. Supply Voltage www.onsemi.com 7 3.5 NCS2004, NCS2004A 4 10k SR+ 10 V VOLTAGE NOISE (nV√Hz) SLEW RATE (V/ms) SR− 10 V 3 SR+ 2.7 V VS = ±2.5 V Vin = GND, Av = 22 RTI SR+ 5 V SR− 5 V SR− 2.7 V 2 1k 100 10 1 1 −60 −40 −20 0 20 40 60 80 100 120 1 10 100 1k 10k FREE AIR TEMPERATURE (°C) FREQUENCY (Hz) Figure 17. Slew Rate vs. Temperature Figure 18. Voltage Noise vs. Frequency VS = ±1.25 V Av = −1 RL = 2 kW 100k 250 mV/div 250 mV/div VS = +2.5 V Av = +1 RL = 2 kW VS = ±1.25 V Av = −1 RL = 2 kW VS = +2.5 V Av = +1 RL = 2 kW 25 mV/div 500 ns/div Figure 20. 2.5 V Non−Inverting Large Signal Pulse Response 25 mV/div 500 ns/div Figure 19. 2.5 V Inverting Large Signal Pulse Response 500 ns/div 500 ns/div Figure 21. 2.5 V Inverting Small Signal Pulse Response Figure 22. 2.5 V Non−Inverting Small Signal Pulse Response www.onsemi.com 8 NCS2004, NCS2004A VS = +3 V Av = +1 RL = 2 kW 250 mV/div 250 mV/div VS = ±1.5 V Av = −1 RL = 2 kW Figure 23. 3 V Inverting Large Signal Pulse Response Figure 24. 3 V Non−Inverting Large Signal Pulse Response VS = ±1.5 V Av = −1 RL = 2 kW VS = +3 V Av = +1 RL = 2 kW 25 mV/div 500 ns/div 25 mV/div 500 ns/div 500 ns/div 500 ns/div Figure 25. 3 V Inverting Small Signal Pulse Response Figure 26. 3 V Non−Inverting Small Signal Pulse Response VS = ±3 V Av = −1 RL = 2 kW 500 mV/div 500 mV/div VS = +6 V Av = +1 RL = 2 kW 500 ns/div 500 ns/div Figure 27. 6 V Inverting Large Signal Pulse Response Figure 28. 6 V Non−Inverting Large Signal Pulse Response www.onsemi.com 9 NCS2004, NCS2004A VS = +6 V Av = +1 RL = 2 kW 25 mV/div 25 mV/div VS = +6 V Av = −1 RL = 2 kW 500 ns/div 500 ns/div Figure 29. 6 V Inverting Small Signal Pulse Response Figure 30. 6 V Non−Inverting Small Signal Pulse Response www.onsemi.com 10 NCS2004, NCS2004A APPLICATIONS 50 k R1 5.0 k VDD VDD R2 10 k MC1403 VO NCS2004 + VO NCS2004 VDD − Vref − + fO + 1 V ref + V DD 2 2.5 V R R1 V O + 2.5 V(1 ) ) R2 R Figure 31. Voltage Reference C C 1 2pRC For: fo = 1.0 kHz R = 16 kW C = 0.01 mF Figure 32. Wien Bridge Oscillator VDD C R1 R3 C − Vin CO VO NCS2004 + R2 CO = 10 C R2 Vref Hysteresis VOH R1 Vref Given: fo = center frequency A(fo) = gain at center frequency VO + NCS2004 Vin VO − VOL VinL Choose value fo, C Q Then : R3 + pf O C VinH Vref R1 + R1 (V OL * V ref) ) V ref R1 ) R2 R1 V inH + (V OH * V ref) ) V ref R1 ) R2 R1 H+ (V OH * V OL) R1 ) R2 V inL + R2 + R3 2 A(f O) R1 R3 4Q 2 R1 * R3 For less than 10% error from operational amplifier, ((QO fO)/BW) < 0.1 where fo and BW are expressed in Hz. If source impedance varies, filter may be preceded with voltage follower buffer to stabilize filter parameters. Figure 33. Comparator with Hysteresis Figure 34. Multiple Feedback Bandpass Filter www.onsemi.com 11 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE L SCALE 2:1 A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DATE 17 JAN 2013 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) B M M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J GENERIC MARKING DIAGRAM* C K H XXXMG G SOLDER FOOTPRINT 0.50 0.0197 XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. mm Ǔ ǒinches STYLE 1: PIN 1. BASE 2. EMITTER 3. BASE 4. COLLECTOR 5. COLLECTOR STYLE 2: PIN 1. ANODE 2. EMITTER 3. BASE 4. COLLECTOR 5. CATHODE STYLE 3: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. CATHODE 1 STYLE 4: PIN 1. SOURCE 1 2. DRAIN 1/2 3. SOURCE 1 4. GATE 1 5. GATE 2 STYLE 6: PIN 1. EMITTER 2 2. BASE 2 3. EMITTER 1 4. COLLECTOR 5. COLLECTOR 2/BASE 1 STYLE 7: PIN 1. BASE 2. EMITTER 3. BASE 4. COLLECTOR 5. COLLECTOR STYLE 8: PIN 1. CATHODE 2. COLLECTOR 3. N/C 4. BASE 5. EMITTER STYLE 9: PIN 1. ANODE 2. CATHODE 3. ANODE 4. ANODE 5. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42984B STYLE 5: PIN 1. CATHODE 2. COMMON ANODE 3. CATHODE 2 4. CATHODE 3 5. CATHODE 4 Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. SC−88A (SC−70−5/SOT−353) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN6 1.6x1.6, 0.5P CASE 517AP ISSUE O 6 1 SCALE 4:1 A B D 2X 0.10 C PIN ONE REFERENCE 2X 0.10 C ÉÉ ÉÉ ÉÉ DETAIL A OPTIONAL CONSTRUCTION (A3) DETAIL B A 0.05 C A1 0.05 C SIDE VIEW DETAIL A 6X ÉÉÉ ÉÉÉ EXPOSED Cu TOP VIEW 6X C A1 SEATING PLANE 1 OPTIONAL CONSTRUCTION K 6 A3 DIM A A1 A3 b D E e D2 E2 K L L1 MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.20 0.30 1.60 BSC 1.60 BSC 0.50 BSC 1.10 1.30 0.45 0.65 0.20 −−− 0.20 0.40 0.00 0.15 GENERIC MARKING DIAGRAM* 1 XX MG G 3 E2 6X MOLD CMPD DETAIL B D2 L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L L1 E DATE 26 OCT 2007 4 6X XX = Specific Device Code M = Date Code G = Pb−Free Package b e (Note: Microdot may be in either location) 0.10 C A B BOTTOM VIEW 0.05 C *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. NOTE 3 SOLDERMASK DEFINED MOUNTING FOOTPRINT* 1.26 6X 0.52 0.61 1.90 1 0.50 PITCH 6X 0.32 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON25711D 6 PIN UDFN, 1.6X1.6, 0.5P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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