NCS2005SN1T1G

NCS2005 Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output The NCS2005 provides high performance in a wide range of applications. The NCS2005 offers beyond rail−to−rail input range, full rail−to−rail output swing, large capacitive load driving ability, and low distortion. The inputs can be driven by voltages that exceed both power supply rails, thus eliminating concerns over exceeding the common−mode voltage range. The rail−to−rail output swing capability provides the maximum possible dynamic range at the output. This is particularly important when operating on low supply voltages. Operating on supplies of 2.2 V to 32 V, the NCS2005 is excellent for a very wide range of applications in low power systems. With a supply current of 1.3 mA, the 8 MHz gain−bandwidth of this device supports applications where faster speeds are required. Placing the amplifier right at the signal source reduces board size and simplifies signal routing. The NCS2005 is available in a space−saving 5−pin SOT−23 package. www.onsemi.com 5 1 SOT23−5 SN SUFFIX CASE 483 MARKING DIAGRAM 5 JFKAYWG G 1 Features JFK A Y W G • Wide Power Supply Range: 2.2 V to 32 V • Common Mode Voltage Range Wider than Rail−to−Rail: • • • • • VCM = −0.1 V to 5.1 V @ VS = 5 V Wide Gain−bandwidth: 8 MHz typical Low Supply Current: 1.3 mA typical Stable with a 1 nF Capacitor Load with a Phase Margin over 25° @ VS = 10 V Available in a Space−saving 5−pin SOT23 Package These devices are Pb−free, Halogen free/BFR Free and are RoHS Compliant Typical Applications • • • • • • • = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) PIN DIAGRAM OUT 1 V− 2 + Active Filters Voltage Referenced Buffers Sensors and Instrumentation Microphone Amplifiers ASIC Input Drivers Portable Communications PCMCIA Cards IN+ 5 V+ 4 IN − − 3 (Top View) ORDERING INFORMATION Device NCS2005SN1T1G Package Shipping† SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 March, 2019 − Rev. 2 1 Publication Order Number: NCS2005/D NCS2005 Table 1. PIN DESCRIPTION Pin Name Type Description 1 OUT Output Amplifier output 2 V− Power Negative power supply 3 IN+ Input Non−inverting input of amplifier 4 IN− Input Inverting input of amplifier 5 V+ Power Positive power supply Table 2. ABSOLUTE MAXIMUM RATINGS (Note 1) Symbol Value Units VS 0 to 35 V Input Voltage Range VCM (V−) − 0.3 V to (V+) + 0.3 V V Differential Input Voltage Range Vdiff 0 to 15 V rating Supply Voltage Range (V+ − V−) Input Pin Current IIN ±10 mA IOUT ±20 mA Is 25 mA TJ(max) +150 °C Tstg −65 to +150 °C ESD Capability (Note 4) Human Body Model Charged Device Model HBM CDM 4000 400 Moisture Sensitivity Level (Note 5) MSL Level 1 Output Pin Current (Note 2) Supply Current Maximum Junction Temperature (Note 3) Storage Temperature Range V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. Applies to both single supply and split supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. 3. The maximum power dissipation is a function of TJ(MAX), TJA, and TA. The maximum allowable dissipation at any ambient temperature is Pd = (TJ(max) – TA)/TJA. All numbers apply for packages soldered directly to a PC board. 4. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per JESD22−A114 ESD Charged Device Model tested per ANSI/ESD S5.3.1−2009 5. Moisture Sensitivity Level tested per IPC/JEDEC standard: J−STD−020A Table 3. THERMAL CHARACTERISTICS Parameter Symbol Package Single Layer Board Multi Layer Board Units Thermal Resistance Junction−to−Ambient (Note 6) qJA SOT−23−5 408 (Note 6) 355 (Note 7) °C/W 6. Values based on a 1S standard PCB according to JEDEC51−3 with 1.0 oz copper and a 300 mm2 copper area 7. Values based on a 1S2P standard PCB according to JEDEC51−7 with 1.0 oz copper and a 100 mm2 copper area Table 4. OPERATING RANGES Parameter Power Supply Voltage Common Mode Input Voltage Ambient Temperature Symbol Min Max Units VS 2.2 32 V VCM (V−) − 0.1 (V+) + 0.1 V TA −40 125 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NCS2005 Table 5. ELECTRICAL CHARACTERISTICS AT 10 V SUPPLY Unless otherwise noted, values are referenced to TA = 25°C, V+ = 10 V, V− = 0 V, VCM = V+/2, and RL > 1 MW to V+/2. Boldface limits apply from TA = −40°C to 125°C. (Notes 8, 9) Parameter Test Conditions Symbol Min Typ Max Units IS 1.30 1.5 mA PSRR 113 SUPPLY CHARACTERISTICS Quiescent Supply Current No load Power Supply Rejection Ratio VS = 2.7 V to 30 V 1.7 dB 70 INPUT CHARACTERISTICS Input Offset Voltage VOS 0.2 DV/DT 1 IIB 50 6 mV 6 Input Offset Voltage Drift Input Bias Current VCM = 0 V mV/°C 200 nA 200 VCM = 10 V 50 200 200 Input Offset Current VCM = 0 V IOS 2 70 nA 80 VCM = 10 V 2 70 80 Input Resistance RIN 95 MW Input Capacitance CIN 3 pF dB Common Mode Rejection Ratio VCM = V− to V+ CMRR 73 84 9.65 9.80 OUTPUT CHARACTERISTICS High−level output voltage IL = 10 mA VOH Low−Level Output Voltage IL = 10 mA VOL 176 Output Current Capability Sourcing current IOUT 12 Sinking current V 300 mV mA 20 DYNAMIC PERFORMANCE Open Loop Voltage Gain RL = 10 kW AVOL 107 dB Gain−Bandwidth Product RL = 10 kW GBWP 8.5 MHz Gain Margin RL = 10 kW AM 5.5 dB Phase Margin RL = 10 kW yM 65 ° Slew Rate RL = 10 kW Total Harmonic Distortion Plus Noise fIN = 1 kHz, AV = 2, RL = 2 kW 83 SR 2.8 V/ms THD+n 0.0015 % eN 45 nV/√Hz NOISE PERFORMANCE Voltage Noise Density f = 1 kHz 8. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 9. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TJ = TA = 25°C. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NCS2005 Table 6. ELECTRICAL CHARACTERISTICS AT 5 V SUPPLY Unless otherwise noted, values are referenced to TA = 25°C, V+ = 5 V, V− = 0 V, VCM = V+/2, and RL ≥ 1 MW to V+/2. Boldface limits apply from TA = −40°C to 125°C, unless otherwise noted. (Notes 10, 11) Parameter Test Conditions Symbol Min Typ Max Units SUPPLY CHARACTERISTICS Quiescent Supply Current No load Power Supply Rejection Ratio VS = 2.7 V to 30 V IS PSRR 1.25 mA 113 dB 70 INPUT CHARACTERISTICS VOS Input Offset Voltage 0.2 6 mV 6 Input Offset Voltage Drift Input Bias Current VCM = 0 V DV/DT 1 mV/°C IIB 55 nA VCM = 5 V Input Offset Current 55 IOS VCM = 0 V 2 Input Resistance RIN Input Capacitance Common Mode Rejection Ratio nA 2 VCM = 5 V 45 CIN VCM = V− to V+ MW 3 pF CMRR 68 90 dB 4.75 4.83 OUTPUT CHARACTERISTICS High−level Output Voltage IL = 5 mA VOH Low−Level Output Voltage IL = 5 mA VOL 130 Output Current Capability Sourcing current IOUT 12 Sinking current V 200 mV mA 20 DYNAMIC PERFORMANCE Open Loop Voltage Gain RL = 10 kW AVOL Gain−Bandwidth Product RL = 10 kW Gain Margin RL = 10 kW Phase Margin RL = 10 kW Slew Rate RL = 10 kW Total Harmonic Distortion Plus Noise fIN = 1 kHz, AV = 2, RL = 2 kW 83 100 dB GBWP 8.5 MHz AM 5.5 dB yM 65 ° SR 2.7 V/ms THD+n 0.002 % eN 45 nV/√Hz NOISE PERFORMANCE Voltage Noise Density f = 1kHz 10. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 11. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TJ = TA = 25°C. www.onsemi.com 4 NCS2005 Table 7. ELECTRICAL CHARACTERISTICS AT 2.7 V SUPPLY Unless otherwise noted, values are referenced to TA = 25°C, V+ = 2.7 V, V− = 0 V, VCM = V+/2, and RL ≥ 1 MW to V+/2. Boldface limits apply from TA = −40°C to 125°C, unless otherwise noted. (Notes 12, 13) Parameter Test Conditions Symbol Min Typ Max Units SUPPLY CHARACTERISTICS Quiescent Supply Current No load Power Supply Rejection Ratio VS = 2.7 V to 30 V IS PSRR 70 1.25 mA 113 dB INPUT CHARACTERISTICS Input Offset Voltage VOS 0.2 DV/DT 1 mV/°C IIB 45 nA 6 mV 6 Input Offset Voltage Drift Input Bias Current VCM = 0 V VCM = 2.7 V Input Offset Current 45 IOS 2 Input Resistance RIN 90 MW Input Capacitance CIN 3 pF VCM = 0 V VCM = 2.7 V Common Mode Rejection Ratio nA 2 VCM = V− to V+ CMRR 58 96 dB VOH 2.50 2.60 V OUTPUT CHARACTERISTICS High−Level Output Voltage IL = 2.7 mA Low−Level Output Voltage IL = 2.7 mA VOL 100 Output Current Capability Sourcing current IOUT 12 Sinking current 130 mV mA 20 DYNAMIC PERFORMANCE Open Loop Voltage Gain RL = 10 kW AVOL Gain−Bandwidth Product RL = 10 kW GBWP Gain Margin RL = 10 kW Phase Margin RL = 10 kW Slew Rate RL = 10 kW Total Harmonic Distortion Plus Noise fIN = 1 kHz, AV = 2, RL = 2 kW 73 114 dB 8.5 MHz AM 6 dB yM 60 ° SR 2.6 V/ms THD+n 0.05 % eN 45 nV/√Hz NOISE PERFORMANCE Voltage Noise Density f = 1kHz 12. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 13. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TJ = TA = 25°C. www.onsemi.com 5 NCS2005 TYPICAL CHARACTERISTICS 0.35 T = −40°C T = 25°C 1.4 1.3 T = 125°C 1.2 T = 85°C 1.1 1.0 0 5 10 15 20 25 30 35 0.25 0.15 0.10 0.05 0 VS = ±1.35 V −0.10 −0.15 −1.35 −0.85 −0.35 T = 25°C 0.15 0.65 1.15 Figure 1. Quiescent Current Per Channel vs. Supply Voltage Figure 2. Input Offset Voltage vs. Common Mode Input Voltage 0.35 T = 85°C T = 125°C 0.25 0.20 0.15 0.10 0.05 T = −40°C 0 T = 85°C 0.30 0.25 T = 125°C 0.20 T = −40°C T = 25°C 0.15 0.10 0.05 0 −0.05 −0.05 −0.10 −0.15 −2.5 VS = ±2.5 V −0.10 −0.15 −5 T = 25°C −1.5 −0.5 0.5 1.5 2.5 VS = ±5 V −4 −3 −2 −1 0 1 2 3 4 INPUT VOLTAGE (V) INPUT VOLTAGE (V) Figure 3. Input Offset Voltage vs. Common Mode Input Voltage Figure 4. Input Offset Voltage vs. Common Mode Voltage 180 5 120 VS = 5 V RL = 10 kW TA = 25°C 160 140 120 PHASE 100 80 GAIN 60 40 CL = 1 nF CL = 250 pF CL = 25 pF 20 10 100 1K T = 25°C RL = 10 kW 100 CMRR (dB) MAGNITUDE (dB) / PHASE (deg) T = −40°C −0.05 INPUT VOLTAGE (V) 0.30 0 −20 T = 125°C 0.20 SUPPLY VOLTAGE (V) 0.35 INPUT OFFSET VOLTAGE (mV) INPUT OFFSET VOLTAGE (mV) 1.5 T = 85°C 0.30 INPUT OFFSET VOLTAGE (mV) SUPPLY CURRENT (mA) 1.6 80 60 40 VS = 2.7 V VS = 5.0 V VS = 10 V 20 10K 100K 1M 10M 100M 0 10 FREQUENCY (Hz) 100 1K 10K 100K 1M FREQUENCY (Hz) Figure 5. Gain and Phase vs. Frequency Figure 6. CMRR vs. Frequency www.onsemi.com 6 10M 100M NCS2005 TYPICAL CHARACTERISTICS 120 80 170 VOLTAGE NOISE (nV/√Hz) 100 PSRR (dB) 190 VS = ±2.5 V T = 25°C VIN = 100 mVpp PSRR− 60 PSRR+ 40 20 0 −20 10 100 1K 10K 100K 1M 10M 70 50 10 100 1K 10K 100K FREQUENCY (Hz) Figure 7. PSRR vs. Frequency Figure 8. Input Voltage Noise vs. Frequency 1.0 LOW LEVEL OUTPUT VOLTAGE (V) THD+N (%) 90 10 100M AV = 2 RL = 2 kW 0.1 VS = 2.7 V 0.01 VS = 5.0 V 0.001 VS = 10 V 10 100 1K 10K 100K T = 125°C VS = 2.7 V 0.8 T = 85°C 0.6 T = 25°C 0.4 T = −40°C 0.2 0 0 2 4 6 8 10 12 14 16 18 FREQUENCY (Hz) LOW LEVEL OUTPUT CURRENT (mA) Figure 9. THD+N vs. Frequency Figure 10. Low Level Output Voltage vs. Output Current @ Vs = 2.7 V 3.00 2.75 20 1.0 LOW LEVEL OUTPUT VOLTAGE (V) HIGH LEVEL OUTPUT VOLTAGE (V) 110 FREQUENCY (Hz) 1 VS = 2.7 V 2.50 2.25 2.00 1.75 1.50 1.25 T = 85°C 1.00 0.75 T = 25°C 0.50 0.25 0 130 30 10 0.0001 150 T = 125°C 0 −2 −4 −6 −8 T = −40°C −10 −12 −14 −16 −18 −20 0.9 T = 125°C VS = 5 V 0.8 T = 85°C 0.7 0.6 T = 25°C 0.5 0.4 0.3 T = −40°C 0.2 0.1 0 0 2 4 6 8 10 12 14 16 18 HIGH LEVEL OUTPUT CURRENT (mA) LOW LEVEL OUTPUT CURRENT (mA) Figure 11. High Level Output Voltage vs. Output Current @ Vs = 2.7 V Figure 12. Low Level Output Voltage vs. Output Current @ Vs = 5 V www.onsemi.com 7 20 NCS2005 1.0 5 LOW LEVEL OUTPUT VOLTAGE (V) 6 T = −40°C 4 T = 25°C 3 2 T = 85°C VS = 5 V 1 0 −1 T = 125°C 0 −2 −4 −6 −8 −10 −12 −14 −16 −18 −20 T = 125°C 0.9 VS = 10 V 0.8 T = 85°C 0.7 0.6 T = 25°C 0.5 0.4 0.3 T = −40°C 0.2 0.1 0 0 2 4 6 8 10 12 14 16 18 HIGH LEVEL OUTPUT CURRENT (mA) LOW LEVEL OUTPUT CURRENT (mA) Figure 13. Low Level Output Voltage vs. Output Current Figure 14. High Level Output Voltage vs. Output Current 10 20 75 9 8 50 T = −40°C 7 6 VOLTAGE (mV) HIGH LEVEL OUTPUT VOLTAGE (V) HIGH LEVEL OUTPUT VOLTAGE (V) TYPICAL CHARACTERISTICS T = 25°C 5 T = 85°C 4 3 T = 125°C 2 1 0 −1 −2 −4 VS = ±2.5 V AV = +1 RL = 10 kW CL = 24.7 pF 0 −25 Input Output −50 VS = 10 V 0 25 −6 −8 −75 −10 −10 −12 −14 −16 −18 −20 0 10 20 30 40 50 HIGH LEVEL OUTPUT CURRENT (mA) TIME (ms) Figure 15. Low Level Output Voltage vs. Output Current Figure 16. Non−inverting Small Signal Transient Response 100 Input Output 80 60 2 1 40 VOLTAGE (V) VOLTAGE (mV) 60 VS = ±2.5 V AV = −1 RL = 10 kW CL = 24.7 pF 20 0 −20 −40 −60 −80 −100 −10 VS = ±2.5 V AV = +1 RL = 10 kW CL = 24.7 pF 0 −1 Input Output −2 0 10 20 30 40 50 −3 60 −10 0 10 20 30 40 50 TIME (ms) TIME (ms) Figure 17. Inverting Small Signal Transient Response Figure 18. Non−Inverting Large Signal Transient Response www.onsemi.com 8 60 NCS2005 TYPICAL CHARACTERISTICS 0 BIAS CURRENT (nA) VOLTAGE (V) 0 −1 Input Output −2 0 10 20 30 VS = ±2.5 V 0.8 −20 VS = ±2.5 V AV = +1 RL = 10 kW CL = 24.7 pF 1 −3 −10 1.0 −10 0.6 −30 −40 0.4 −50 0.2 −60 0 −70 40 −90 −100 −40 60 50 −0.2 Bias Current + Bias Current − Offset Current −80 −15 10 35 60 −0.4 85 110 TIME (ms) TEMPERATURE (°C) Figure 19. Inverting Large Signal Transient Response Figure 20. Input Bias and Offset Current vs. Temperature www.onsemi.com 9 OFFSET CURRENT (nA) 2 −0.6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOP−5 CASE 483 ISSUE N 5 1 SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. D 5X NOTE 5 2X DATE 12 AUG 2020 0.20 C A B 0.10 T M 2X 0.20 T 5 B 1 4 2 B S 3 K DETAIL Z G A A TOP VIEW DIM A B C D G H J K M S DETAIL Z J C 0.05 H C SIDE VIEW SEATING PLANE END VIEW GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 0.95 0.037 MILLIMETERS MIN MAX 2.85 3.15 1.35 1.65 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 1.9 0.074 5 5 XXXAYWG G 1 1 Analog 2.4 0.094 XXX = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package 1.0 0.039 XXX MG G Discrete/Logic XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ARB18753C TSOP−5 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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