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NCS20072DR2G

NCS20072DR2G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOIC8_150MIL

  • 描述:

    通用放大器 2.7V~36V 3MHz SOIC8_150MIL

  • 数据手册
  • 价格&库存
NCS20072DR2G 数据手册
NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074 Operational Amplifier, Railto-Rail Output, 3 MHz BW The NCx2007x series operational amplifiers provide rail−to−rail output operation, 3 MHz bandwidth, and are available in single, dual, and quad configurations. Rail−to−rail operation enables the user to make optimal use of the entire supply voltage range while taking advantage of 3 MHz bandwidth. The NCx2007x can operate on supply voltages as low as 2.7 V over the temperature range of −40°C to 125°C. At a 2.7 V supply, the high bandwidth provides a slew rate of 2.8 V/ms while only consuming 405 mA of quiescent current per channel. The wide supply range allows the NCx2007x to run on supply voltages as high as 36 V, making it ideal for a broad range of applications. Since this is a CMOS device, high input impedance and low bias currents make it ideal for interfacing to a wide variety of signal sensors. The NCx2007x devices are available in a variety of compact packages. Automotive qualified options are available under the NCV prefix. www.onsemi.com 5 1 TSOP−5 CASE 483 SOT−553 CASE 463B 8 1 Micro8] CASE 846A SOIC−8 CASE 751 Features • • • • • • • • • • Rail−To−Rail Output Wide Supply Range: 2.7 V to 36 V Wide Bandwidth: 3 MHz typical at VS = 2.7 V High Slew Rate: 2.8 V/ms typical at VS = 2.7 V Low Supply Current: 405 mA per channel at VS = 2.7 V Low Input Bias Current: 5 pA typical Wide Temperature Range: −40°C to 125°C Available in a variety of packages NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 14 1 TSSOP−14 CASE 948G TSSOP−8 CASE 948S 14 1 SOIC−14 NB CASE 751A DEVICE MARKING INFORMATION See general marking information in the device marking section on page 2 of this data sheet. Applications • Current Sensing • Signal Conditioning • Automotive ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. End Products • Notebook Computers • Portable Instruments • Power Supplies © Semiconductor Components Industries, LLC, 2017 September, 2018 − Rev. 14 1 Publication Order Number: NCS20071/D NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074 MARKING DIAGRAMS Single Channel Configuration NCS20071, NCV20071 5 AEAAYWG G ALMG G 1 TSOP−5 CASE 483 SOT−553 CASE 463B Dual Channel Configuration NCS20072, NCV20072 8 8 NCS20072 ALYW G 0072 AYWG G K72 YWW AG 1 1 Micro8] CASE 846A SOIC−8 CASE 751 TSSOP−8 CASE 948S Quad Channel Configuration NCS20074, NCV20074 14 14 NCS2 0074 ALYWG G NCS20074G AWLYWW 1 1 TSSOP−14 CASE 948G XXXXX A WL, L Y WW, W G or G SOIC−14 NB CASE 751A = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) www.onsemi.com 2 NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074 Single Channel Configuration NCS20071, NCV20071 OUT 1 5 IN+ VDD 1 5 VDD 4 OUT + IN+ 3 VSS 2 IN− 3 − − 2 + VSS 4 IN− SOT23−5 (TSOP−5) SOT553−5 Quadruple Channel Configuration NCS20074, NCV20074 Dual Channel Configuration NCS20072, NCV20072 OUT 1 1 IN− 1 2 − IN+ 1 3 + VSS 4 OUT 1 1 14 OUT 4 8 VDD IN− 1 2 − − 13 IN− 4 7 OUT 2 IN+ 1 3 + + 12 IN+ 4 − 6 IN− 2 + 5 IN+ 2 11 VSS VDD 4 IN+ 2 5 + + 10 IN+ 3 IN− 2 6 − − OUT 2 7 Figure 1. Pin Connections www.onsemi.com 3 9 IN− 3 8 OUT 3 NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074 ORDERING INFORMATION Device Configuration Automotive NCS20071SN2T1G No NCS20071XV53T2G NCV20071SN2T1G* Single Yes NCV20071XV53T2G* NCS20072DMR2G NCS20072DR2G No NCS20072DTBR2G NCV20072DMR2G* Dual NCV20072DR2G* Yes NCV20072DTBR2G* NCS20074DR2G No NCS20074DTBR2G NCV20074DR2G* NCV20074DTBR2G* Quad Yes Marking Package Shipping† AEA TSOP−5 (Pb−Free) 3000 / Tape and Reel AL SOT553−5 (Pb−Free) 4000 / Tape and Reel AEA TSOP−5 (Pb−Free) 3000 / Tape and Reel AL SOT553−5 (Pb−Free) 4000 / Tape and Reel 0072 Micro8 (MSOP8) (Pb−Free) 4000 / Tape and Reel NCS20072 SOIC−8 (Pb−Free) 2500 / Tape and Reel K72 TSSOP−8 (Pb−Free) 2500 / Tape and Reel 0072 Micro8 (MSOP8) (Pb−Free) 4000 / Tape and Reel NCS20072 SOIC−8 (Pb−Free) 2500 / Tape and Reel K72 TSSOP−8 (Pb−Free) 2500 / Tape and Reel NCS20074 SOIC−14 (Pb−Free) 2500 / Tape and Reel NCS2 0074 TSSOP−14 (Pb−Free) 2500 / Tape and Reel NCS20074 SOIC−14 (Pb−Free) 2500 / Tape and Reel NCS2 0074 TSSOP−14 (Pb−Free) 2500 / Tape and Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. www.onsemi.com 4 NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074 ABSOLUTE MAXIMUM RATINGS (Note 1) Rating Symbol Supply Voltage (VDD – VSS) (Note 4) Limit Unit VS 40 V Input Voltage VCM VSS − 0.2 to VDD + 0.2 V Differential Input Voltage (Note 2) VID ±Vs V Maximum Input Current IIN ±10 mA Maximum Output Current (Note 3) IO ±100 mA Continuous Total Power Dissipation (Note 4) PD 200 mW Maximum Junction Temperature TJ 150 °C TSTG −65 to 150 °C Storage Temperature Range Mounting Temperature (Infrared or Convection – 20 sec) Tmount 260 °C ESD Capability (Note 5) HBM MM MM CDM CDM 2000 200 150 2000 (C6) 1000 (C6) V ILU 100 mA MSL Level 1 Human Body Model Machine Model − NCx20071 Machine Model − NCx20072, NCx20074 Charged Device Model − NCx20071, NCx20072 Charged Device Model − NCx20074 Latch−Up Current (Note 6) Moisture Sensitivity Level (Note 7) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. Maximum input current must be limited to ±10 mA. Series connected resistors of at least 500 W on both inputs may be used to limit the maximum input current to ±10 mA. 3. Total power dissipation must be limited to prevent the junction temperature from exceeding the 150°C limit. 4. Continuous short circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of the maximum output current rating over the long term may adversely affect reliability. Shorting output to either VDD or VSS will adversely affect reliability. 5. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per JEDEC standard JS-001 (AEC−Q100−002) ESD Machine Model tested per JEDEC standard JESD22−A115 (AEC−Q100−003) ESD Charged Device Model tested per JEDEC standard JESD22−C101 (AEC−Q100−011) 6. Latch−up Current tested per JEDEC standard JESD78 (AEC−Q100−004) 7. Moisture Sensitivity Level tested per IPC/JEDEC standard J−STD−020A THERMAL INFORMATION Parameter Symbol qJA Junction−to−Ambient Package Single Layer Board (Note 8) Multi−Layer Board (Note 9) SOT23−5 / TSOP5 265 195 SOT553−5 325 244 Micro8 / MSOP8 236 167 SOIC−8 190 131 TSSOP−8 253 194 SOIC−14 142 101 TSSOP−14 179 Unit °C/W 128 mm2 8. Values based on a 1S standard PCB according to JEDEC51−3 with 1.0 oz copper and a 300 copper area 9. Values based on a 1S2P standard PCB according to JEDEC51−7 with 1.0 oz copper and a 100 mm2 copper area OPERATING RANGES Parameter Symbol Min Max Unit VS 2.7 36 V Operating Supply Voltage (Split Supply) VS ±1.35 ±18 V Differential Input Voltage (Note 10) VID VS V Input Common Mode Voltage Range VCM VSS VDD − 1.35 V TA −40 125 °C Operating Supply Voltage (Single Supply) Ambient Temperature Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 10. Maximum input current must be limited to ±10 mA. See Absolute Maximum Ratings for more information. www.onsemi.com 5 NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074 ELECTRICAL CHARACTERISTICS AT VS = 2.7 V TA = 25°C; RL ≥ 10 kW; VCM = VOUT = mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis. Boldface limits apply over the specified temperature range, TA = −40°C to 125°C. (Notes 11, 12) Parameter Symbol Conditions Min Typ Max 1.3 ±3.5 Unit INPUT CHARACTERISTICS NCx20071 Input Offset Voltage +4.5 VOS 1.3 NCx20072, NCx20074 Offset Voltage Drift DVOS/DT IIB 2 NCx20074 DC pA 75 500 IOS XTLK 200 1500 2 Channel Separation mV/°C 2 NCx20071, NCx20072 Input Offset Current (Note 12) mV +4 TA = 25°C to 125°C 5 Input Bias Current (Note 12) ±3 75 pA 200 NCx20072 100 NCx20074 115 dB Differential Input Resistance RID 5 GW Common Mode Input Resistance RIN 5 GW Differential Input Capacitance CID 1.5 pF Common Mode Input Capacitance CCM 3.5 pF 90 Common Mode Rejection Ratio CMRR VCM = VSS + 0.2 V to VDD − 1.35 V 110 dB 69 OUTPUT CHARACTERISTICS 96 Open Loop Voltage Gain Output Current Capability (Note 13) AVOL IO 118 dB 86 Op amp sinking current 70 Op amp sourcing current 50 0.006 mA 0.15 Output Voltage High VOH Voltage output swing from positive rail Output Voltage Low VOL Voltage output swing from negative rail UGBW CL = 25 pF 3 MHz SR CL = 20 pF, RL = 2 kW 2.8 V/ms Phase Margin öm CL = 25 pF 50 ° Gain Margin Am CL = 25 pF 14 dB Settling Time tS 0.22 0.005 V 0.15 0.22 V AC CHARACTERISTICS Unity Gain Bandwidth Slew Rate at Unity Gain VO = 1 Vpp, Gain = 1, CL = 20 pF Settling time to 0.1% 0.6 Settling time to 0.01% 1.2 ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 11. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 12. Performance guaranteed over the indicated operating temperature range by design and/or characterization. 13. Power dissipation must be limited to prevent junction temperature from exceeding 150°C. See Absolute Maximum Ratings for more information. www.onsemi.com 6 NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074 ELECTRICAL CHARACTERISTICS AT VS = 2.7 V TA = 25°C; RL ≥ 10 kW; VCM = VOUT = mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis. Boldface limits apply over the specified temperature range, TA = −40°C to 125°C. (Notes 11, 12) Parameter Symbol Conditions Min Typ THD+N VIN = 0.5 Vpp, f = 1 kHz, Av = 1 0.05 Max Unit NOISE CHARACTERISTICS Total Harmonic Distortion plus Noise f = 1 kHz 30 f = 10 kHz 20 in f = 1 kHz 90 PSRR No Load Input Referred Voltage Noise en Input Referred Current Noise % nV/√Hz fA/√Hz SUPPLY CHARACTERISTICS 114 Power Supply Rejection Ratio 135 dB 100 420 NCx20071 Power Supply Quiescent Current No load 625 765 IDD 405 NCx20072, NCx20074 Per channel, no load mA 525 625 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 11. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 12. Performance guaranteed over the indicated operating temperature range by design and/or characterization. 13. Power dissipation must be limited to prevent junction temperature from exceeding 150°C. See Absolute Maximum Ratings for more information. ELECTRICAL CHARACTERISTICS AT VS = 5 V TA = 25°C; RL ≥ 10 kW; VCM = VOUT = mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis. Boldface limits apply over the specified temperature range, TA = −40°C to 125°C. (Notes 14, 15) Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS 1.3 NCx20071 Input Offset Voltage VOS 1.3 NCx20072, NCx20074 Offset Voltage Drift TA = 25°C to 125 °C DVOS/DT IIB 2 XTLK 2 Differential Input Resistance RID Common Mode Input Resistance Differential Input Capacitance Common Mode Input Capacitance DC pA 75 500 NCx20074 Channel Separation 200 1500 IOS mV mV/°C 2 NCx20071, NCx20072 Input Offset Current (Note 15) ±3 +4 5 Input Bias Current (Note 15) ±3.5 +4.5 75 pA 200 NCx20072 100 NCx20074 115 dB 5 GW RIN 5 GW CID 1.5 pF CCM 3.5 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 14. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 15. Performance guaranteed over the indicated operating temperature range by design and/or characterization. 16. Power dissipation must be limited to prevent junction temperature from exceeding 150°C. See Absolute Maximum Ratings for more information. www.onsemi.com 7 NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074 ELECTRICAL CHARACTERISTICS AT VS = 5 V TA = 25°C; RL ≥ 10 kW; VCM = VOUT = mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis. Boldface limits apply over the specified temperature range, TA = −40°C to 125°C. (Notes 14, 15) Parameter Symbol Conditions CMRR VCM = VSS + 0.2 V to VDD − 1.35 V Min Typ 102 125 Max Unit INPUT CHARACTERISTICS Common Mode Rejection Ratio dB 80 OUTPUT CHARACTERISTICS Open Loop Voltage Gain Output Current Capability (Note 16) 96 AVOL IO 120 dB 86 Op amp sinking current 50 Op amp sourcing current 60 0.013 mA 0.20 Output Voltage High VOH Voltage output swing from positive rail Output Voltage Low VOL Voltage output swing from negative rail UGBW CL = 25 pF 3 MHz Slew Rate at Unity Gain SR CL = 20 pF, RL = 2 kW 2.7 V/ms Phase Margin öm CL = 25 pF 50 ° Gain Margin Am CL = 25 pF 14 dB 0.25 0.01 V 0.10 0.15 V AC CHARACTERISTICS Unity Gain Bandwidth Settling Time tS VO = 3 Vpp, Gain = 1, CL = 20 pF Settling time to 0.1% 1.2 Settling time to 0.01% 5.6 ms NOISE CHARACTERISTICS Total Harmonic Distortion plus Noise THD+N VIN = 2.5 Vpp, f = 1 kHz, Av = 1 0.009 f = 1 kHz 30 f = 10 kHz 20 90 Input Referred Voltage Noise en Input Referred Current Noise in f = 1 kHz PSRR No Load % nV/√Hz fA/√Hz SUPPLY CHARACTERISTICS 114 Power Supply Rejection Ratio 135 dB 100 430 NCx20071 Power Supply Quiescent Current No load IDD 775 410 NCx20072, NCx20074 Per channel, no load 635 530 mA 630 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 14. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 15. Performance guaranteed over the indicated operating temperature range by design and/or characterization. 16. Power dissipation must be limited to prevent junction temperature from exceeding 150°C. See Absolute Maximum Ratings for more information. www.onsemi.com 8 NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074 ELECTRICAL CHARACTERISTICS AT VS = 10 V TA = 25°C; RL ≥ 10 kW; VCM = VOUT = mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis. Boldface limits apply over the specified temperature range, TA = −40°C to 125°C. (Notes 17, 18) Parameter Symbol Conditions VOS NCx20071 Min Typ Max Unit 1.3 ±3.5 mV +4.5 mV ±3 mV INPUT CHARACTERISTICS Input Offset Voltage 1.3 Input Offset Voltage VOS NCx20072, NCx20074 Offset Voltage Drift DVOS/DT TA = 25°C to 125°C +4 5 Input Bias Current (Note 18) IIB 2 Input Offset Current (Note 18) XTLK 2 DC pA 75 500 IOS NCx20074 Channel Separation 200 1500 NCx20071, NCx20072 mV mV/°C 2 75 pA 200 NCx20072 100 NCx20074 115 dB Differential Input Resistance RID 5 GW Common Mode Input Resistance RIN 5 GW Differential Input Capacitance CID 1.5 pF Common Mode Input Capacitance CCM 3.5 pF 110 Common Mode Rejection Ratio CMRR VCM = VSS + 0.2 V to VDD − 1.35 V 130 dB 87 OUTPUT CHARACTERISTICS 98 Open Loop Voltage Gain Output Current Capability (Note 19) AVOL IO 120 dB 88 Op amp sinking current 50 Op amp sourcing current 65 0.023 mA 0.08 Output Voltage High VOH Voltage output swing from positive rail Output Voltage Low VOL Voltage output swing from negative rail UGBW CL = 25 pF 3 MHz SR CL = 20 pF, RL = 2 kW 2.6 V/ms Phase Margin öm CL = 25 pF 50 ° Gain Margin Am CL = 25 pF 14 dB Settling Time tS 0.10 0.022 V 0.3 0.35 V AC CHARACTERISTICS Unity Gain Bandwidth Slew Rate at Unity Gain VO = 8.5 Vpp, Gain = 1, CL = 20 pF Settling time to 0.1% 3.4 Settling time to 0.01% 6.8 ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 17. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 18. Performance guaranteed over the indicated operating temperature range by design and/or characterization. 19. Power dissipation must be limited to prevent junction temperature from exceeding 150°C. See Absolute Maximum Ratings for more information. www.onsemi.com 9 NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074 ELECTRICAL CHARACTERISTICS AT VS = 10 V TA = 25°C; RL ≥ 10 kW; VCM = VOUT = mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis. Boldface limits apply over the specified temperature range, TA = −40°C to 125°C. (Notes 17, 18) Parameter Symbol Conditions Min Typ THD+N VIN = 7.5 Vpp, f = 1 kHz, Av = 1 0.004 Max Unit NOISE CHARACTERISTICS Total Harmonic Distortion plus Noise f = 1 kHz 30 f = 10 kHz 20 in f = 1 kHz 90 PSRR No Load Input Referred Voltage Noise en Input Referred Current Noise % nV/√Hz fA/√Hz SUPPLY CHARACTERISTICS 114 Power Supply Rejection Ratio 135 dB 100 430 NCx20071 Power Supply Quiescent Current No load 645 785 IDD 416 NCx20072, NCx20074 Per channel, no load mA 540 640 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 17. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 18. Performance guaranteed over the indicated operating temperature range by design and/or characterization. 19. Power dissipation must be limited to prevent junction temperature from exceeding 150°C. See Absolute Maximum Ratings for more information. ELECTRICAL CHARACTERISTICS AT VS = 36 V TA = 25°C; RL ≥ 10 kW; VCM = VOUT = mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis. Boldface limits apply over the specified temperature range, TA = −40°C to 125°C. (Notes 20, 21) Parameter Symbol Conditions Min Typ Max Unit 1.3 ±3.5 mV +4.5 mV ±3 mV +4 mV INPUT CHARACTERISTICS NCx20071 Input Offset Voltage VOS 1.3 NCx20072, NCx20074 Offset Voltage Drift DVOS/DT TA = 25°C to 125°C 5 Input Bias Current (Note 21) IIB NCx20071, NCx20072 NCx20071, NCx20072 XTLK 2 DC 75 1000 NCx20074 Channel Separation pA 1500 2 IOS 200 2000 NCx20074 Input Offset Current (Note 21) mV/°C 2 75 pA 200 NCx20072 100 NCx20074 115 dB Differential Input Resistance RID 5 GW Common Mode Input Resistance RIN 5 GW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 20. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 21. Performance guaranteed over the indicated operating temperature range by design and/or characterization. 22. Power dissipation must be limited to prevent junction temperature from exceeding 150°C. See Absolute Maximum Ratings for more information. www.onsemi.com 10 NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074 ELECTRICAL CHARACTERISTICS AT VS = 36 V TA = 25°C; RL ≥ 10 kW; VCM = VOUT = mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis. Boldface limits apply over the specified temperature range, TA = −40°C to 125°C. (Notes 20, 21) Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Differential Input Capacitance CID Common Mode Input Capacitance CCM Common Mode Rejection Ratio CMRR NCx20071 VCM = VSS + 0.2 V to VDD − 1.35 V 118 VCM = VSS + 0.2 V to VDD − 1.35 V 120 NCx20072 VCM = VSS + 0.2 V to VDD − 1.35 V 120 NCx20074 1.5 pF 3.5 pF 135 95 145 dB 95 145 85 OUTPUT CHARACTERISTICS 98 Open Loop Voltage Gain Output Current Capability (Note 22) AVOL IO 120 dB 88 Op amp sinking current 50 Op amp sourcing current 65 0.074 NCx20071 Output Voltage High VOH Voltage output swing from positive rail 0.15 0.22 0.074 NCx20072 0.10 0.15 0.074 NCx20074 V 0.10 0.12 0.065 Output Voltage Low mA 0.3 VOL Voltage output swing from negative rail UGBW CL = 25 pF 3 MHz Slew Rate at Unity Gain SR CL = 20 pF, RL = 2 kW 2.4 V/ms Phase Margin öm CL = 25 pF 50 ° Gain Margin Am CL = 25 pF 14 dB Settling Time tS 0.35 V AC CHARACTERISTICS Unity Gain Bandwidth VO = 10 Vpp, Gain = 1, CL = 20 pF Settling time to 0.1% 3.2 Settling time to 0.01% 7 ms NOISE CHARACTERISTICS Total Harmonic Distortion plus Noise THD+N Input Referred Voltage Noise en Input Referred Current Noise in VIN = 28.5 Vpp, f = 1 kHz, Av = 1 0.001 f = 1 kHz 30 f = 10 kHz 20 f = 1 kHz 90 % nV/√Hz fA/√Hz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 20. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 21. Performance guaranteed over the indicated operating temperature range by design and/or characterization. 22. Power dissipation must be limited to prevent junction temperature from exceeding 150°C. See Absolute Maximum Ratings for more information. www.onsemi.com 11 NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074 ELECTRICAL CHARACTERISTICS AT VS = 36 V TA = 25°C; RL ≥ 10 kW; VCM = VOUT = mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis. Boldface limits apply over the specified temperature range, TA = −40°C to 125°C. (Notes 20, 21) Parameter Symbol Conditions PSRR No Load Min Typ 114 135 Max Unit SUPPLY CHARACTERISTICS Power Supply Rejection Ratio dB 100 480 NCx20071 No load NCx20072 Per channel, no load NCx20074 Per channel, no load 840 465 Power Supply Quiescent Current IDD 700 570 700 465 mA 600 700 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 20. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 21. Performance guaranteed over the indicated operating temperature range by design and/or characterization. 22. Power dissipation must be limited to prevent junction temperature from exceeding 150°C. See Absolute Maximum Ratings for more information. www.onsemi.com 12 NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074 0.7 0.6 SUPPLY CURRENT (mA) T = 125°C T = 85°C 0.5 T = 25°C 0.4 T = −40°C 0.3 0.2 0.6 VS = 36 V 0.5 VS = 2.7 V 0.4 VS = 5 V VS = 10 V 0.3 0.2 0 6 12 18 24 SUPPLY VOLTAGE (V) 30 36 −40 −20 Figure 2. Quiescent Current Per Channel vs. Supply Voltage 20 40 60 80 TEMPERATURE (°C) 5 VCM = mid−supply OFFSET VOLTAGE (mV) OFFSET VOLTAGE (mV) −0.4 T = −40°C T = 85°C T = 25°C T = 125°C −0.8 120 VS = ±18 V 10 units 4 −0.2 −0.6 100 Figure 3. Quiescent Current vs. Temperature 0 −1 3 2 1 0 −1 −2 −3 −4 −5 −18 −1.2 0 6 12 18 24 SUPPLY VOLTAGE (V) 30 36 −14 Figure 4. Offset Voltage vs. Supply Voltage 2.5 −10 −6 −2 2 6 10 COMMON MODE VOLTAGE (V) 14 125 Normal operation VS = ±18 V 10 units −2.5 50 GAIN (dB) 75 −7.5 180 VS = 2.7 V, Gain VS = 36 V, Gain VS = 2.7 V, Phase VS = 36 V, Phase 100 0 −5 18 Figure 5. Input Offset Voltage vs. Common Mode Voltage 5 OFFSET VOLTAGE (mV) 0 −10 GAIN 135 90 45 25 0 0 RL = 10 kW CL = 15 pF −45 −25 PHASE (°) SUPPLY CURRENT (mA) 0.7 −90 PHASE −12.5 −15 15.5 −50 16 16.5 17 17.5 COMMON MODE VOLTAGE (V) 18 18.5 −75 10 Figure 6. Input Offset Voltage vs. Common Mode Voltage −135 100 1k 10k 100k 1M FREQUENCY (Hz) 10M −180 100M Figure 7. Gain and Phase vs. Frequency www.onsemi.com 13 NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074 60 1E+1 VS = 5 V RL = 10 kW TA = 25°C 1E+0 40 THD+N (%) PHASE MARGIN (°) 50 VS = 36 V fIN = 1 kHz AV = 1 30 1E−1 1E−2 20 1E−3 10 0 1E−4 0 100 200 300 CAPACITIVE LOAD (pF) 400 500 0 Figure 8. Phase Margin vs. Capacitive Load 1E+1 275 AV = 1 VS = 2.7 V VS = 5 V VS = 10 V 1E−3 30 36 VS = 2.7 V VS = 5 V VS = 10 V VS = 36 V 250 VOLTAGE NOISE (nV/√Hz) THD+N (%) 1E−2 12 18 24 OUTPUT VOLTAGE (Vpp) Figure 9. THD+N vs. Output Voltage 1E+0 1E−1 6 VS = 36 V 225 200 175 150 125 100 75 50 25 INPUT REFERRED CURRENT NOISE (fA/√Hz) 1E−4 10 100 1k 0 10 10k 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure 10. THD+N vs. Frequency Figure 11. Input Voltage Noise vs. Frequency 10000 140 VS = 2.7 V VS = 5 V VS = 10 V VS = 36 V 100 PSRR (dB) 1000 VS = 2.7 V, VDD VS = 2.7 V, VSS VS = 36 V, VDD VS = 36 V VSS 120 100 10 80 60 40 1 0.1 10 20 0 100 1k 10k 100k 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure 12. Input Current Noise vs. Frequency Figure 13. PSRR vs. Frequency www.onsemi.com 14 1M NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074 120 1.4 100 OUTPUT VOLTAGE RELATIVE TO VDD (V) VS = 2.7 V VS = 5 V VS = 10 V VS = 36 V CMRR (dB) 80 60 40 20 RL = 10 kW TA = 25°C 0 10 1k 10k 100k 0.6 0.4 0.2 VS = 36 V 1M 0 2 4 6 8 10 12 14 16 18 OUTPUT CURRENT (mA) Figure 14. CMRR vs. Frequency Figure 15. High Level Output vs. Output Current 18.1 Input Output 20 VS = 36 V AV = +1 RL = 10 kW 18.05 VOLTAGE (V) OUTPUT VOLTAGE RELATIVE TO VSS (V) 0.8 FREQUENCY (Hz) T = −40°C T = 25°C T = 85°C T = 125°C 0.8 1 0 100 1 T = −40°C T = 25°C T = 85°C T = 125°C 1.2 0.6 0.4 18 17.95 0.2 VS = 36 V 0 0 2 4 6 8 10 12 14 16 18 17.9 −20 20 0 20 40 OUTPUT CURRENT (mA) TIME (ms) Figure 16. Low Level Output vs. Output Current Figure 17. Non−inverting Small Signal Transient Response 18.075 60 25 Input Output 18.025 VOLTAGE (V) VOLTAGE (V) 18.05 18 VS = 36 V AV = +1 RL = 10 kW 17.975 20 15 VS = 36 V AV = +1 RL = 10 kW 17.95 17.925 −20 0 20 40 60 10 −20 Input Output 0 20 40 TIME (ms) TIME (ms) Figure 18. Inverting Small Signal Transient Response Figure 19. Non−inverting Large Signal Transient Response www.onsemi.com 15 60 NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074 24 1200 VS = 36 V 22 CURRENT (pA) 20 VOLTAGE (V) 1000 VS = 36 V AV = −1 RL = 10 kW 18 16 14 12 10 −20 IIB+ IIB− IOS 800 600 400 200 0 Input Output 0 20 40 −200 −25 60 0 25 50 75 100 125 TIME (ms) TEMPERATURE (°C) Figure 20. Inverting Large Signal Transient Response Figure 21. Input Bias and Offset Current vs. Temperature 30 VS = 36 V 20 2 mV/div CURRENT (pA) 0.1 Hz to 10 Hz noise VS = ±18 V, VCM = VS/2 RL = 10 kW, CL = 100 pF AV = −1, VIN = 0 V IIB+ IIB− IOS 25 15 10 5 0 −5 0 6 18 12 24 30 36 0 4 5 6 7 8 TIME (s) Figure 23. 0.1 Hz to 10 Hz Noise 500 RL = 10 kW CL = 25 pF 400 −60 −80 −100 VS = 2.7 V VS = 5 V VS = 10 V VS = 36 V −120 −140 100 1k 10k 100k 9 10 VS = 2.7 V VS = 5 V VS = 10 V VS = 36 V 450 IMPEDANCE (W) CHANNEL SEPARATION (dB) 3 COMMON MODE VOLTAGE (V) −40 −160 10 2 Figure 22. Input Bias Current vs. Common Mode Voltage 0 −20 1 350 300 250 200 150 100 50 0 1M 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure 24. Channel Separation vs. Frequency Figure 25. Open Loop Output Impedance www.onsemi.com 16 1M NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074 1000 VS = 36 V 10 V step AV = −1 8 D FROM FINAL VALUE (mV) OFFSET VOLTAGE (mV) 500 10 VS = 36 V 5 Units VCM = mid−supply 0 −500 −1000 −1500 −2000 6 4 2 12−bit Setting 0 ±1/2LSB = ±0.024% −2 −4 −6 −8 −2500 −50 −25 25 0 50 75 125 100 −10 0 15 20 25 30 35 40 Figure 26. Offset Voltage vs. Temperature Figure 27. Large Signal Settling Time SR+ SR− VS = 36 V 4 SLEW RATE (V/ms) 10 TIME (ms) 5 3 2 1 0 −40 5 TEMPERATURE (°C) −20 0 20 40 60 80 100 120 TEMPERATURE (°C) Figure 28. Slew Rate vs. Temperature www.onsemi.com 17 45 50 NCS20071, NCV20071, NCS20072, NCV20072, NCS20074, NCV20074 APPLICATIONS INFORMATION Input Circuit NCS2007x at differential voltages greater than VID = 26 V, series resistors can be added externally to limit the input current flowing between the input pins. Adding 500 W resistors in series with the input prevents the current from exceeding 10 mA over the entire operating range up to 36 V. The NCS2007x input stage has a PMOS input pair and ESD protection diodes. The input pair is internally connected by back−to−back Zener diodes with a reverse voltage of 5.5 V. To protect the internal circuitry, the input current must be limited to 10 mA. When operating the VDD VDD 1k 1k IN− IN+ VSS VSS Figure 29. Differential Input Pair Output listed in the Electrical Characteristics. The junction temperature at a given power dissipation, P, can be calculated using the following formula: TJ = TA + P x qJA The thermal resistance between junction and ambient, qJA, is provided in the Thermal Information section of this datasheet. The NCS2007x has a class AB output stage with rail−to−rail output swing. High output currents can cause the junction temperature to exceed the 150°C absolute maximum rating. In the case of a short circuit where the output is connected to either supply rail, the amount of current the op amp can source and sink is described by the output current capability parameter www.onsemi.com 18 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−553, 5 LEAD CASE 463B ISSUE C SCALE 4:1 D −X− 5 A 4 1 2 3 b e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L E −Y− DATE 20 MAR 2013 HE DIM A b c D E e L HE c 5 PL 0.08 (0.003) M X Y RECOMMENDED SOLDERING FOOTPRINT* INCHES NOM 0.022 0.009 0.005 0.063 0.047 0.020 BSC 0.004 0.008 0.061 0.063 MIN 0.020 0.007 0.003 0.061 0.045 MAX 0.024 0.011 0.007 0.065 0.049 0.012 0.065 GENERIC MARKING DIAGRAM* 0.3 0.0118 XXMG G 0.45 0.0177 XX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1.0 0.0394 1.35 0.0531 MILLIMETERS NOM MAX 0.55 0.60 0.22 0.27 0.13 0.18 1.60 1.65 1.20 1.25 0.50 BSC 0.10 0.20 0.30 1.55 1.60 1.65 MIN 0.50 0.17 0.08 1.55 1.15 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLE 1: PIN 1. BASE 2. EMITTER 3. BASE 4. COLLECTOR 5. COLLECTOR STYLE 2: PIN 1. CATHODE 2. COMMON ANODE 3. CATHODE 2 4. CATHODE 3 5. CATHODE 4 STYLE 3: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. CATHODE 1 STYLE 4: PIN 1. SOURCE 1 2. DRAIN 1/2 3. SOURCE 1 4. GATE 1 5. GATE 2 STYLE 6: PIN 1. EMITTER 2 2. BASE 2 3. EMITTER 1 4. COLLECTOR 1 5. COLLECTOR 2/BASE 1 STYLE 7: PIN 1. BASE 2. EMITTER 3. BASE 4. COLLECTOR 5. COLLECTOR STYLE 8: PIN 1. CATHODE 2. COLLECTOR 3. N/C 4. BASE 5. EMITTER STYLE 9: PIN 1. ANODE 2. CATHODE 3. ANODE 4. ANODE 5. ANODE DOCUMENT NUMBER: STATUS: 98AON11127D ON SEMICONDUCTOR STANDARD 1 © Semiconductor Components Industries, LLC, 2002 January, 2002 − Rev. 01O NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 SOT−553, 5 LEAD http://onsemi.com 1 STYLE 5: PIN 1. ANODE 2. EMITTER 3. BASE 4. COLLECTOR 5. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled exceptCase when stamped Outline Number: 463B “CONTROLLED COPY” in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98AON11127D PAGE 2 OF 2 ISSUE REVISION DATE A ADDED STYLES 3−9. REQ. BY D. BARLOW 11 NOV 2003 B ADDED NOMINAL VALUES AND UPDATED GENERIC MARKING DIAGRAM. REQ. BY HONG XIAO 27 MAY 2005 C UPDATED DIMENSIONS D, E, AND HE. REQ. BY J. LETTERMAN. 20 MAR 2013 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. © Semiconductor Components Industries, LLC, 2013 March, 2013 − Rev. C Case Outline Number: 463B MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOP−5 CASE 483 ISSUE N 5 1 SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. D 5X NOTE 5 2X DATE 12 AUG 2020 0.20 C A B 0.10 T M 2X 0.20 T 5 B 1 4 2 B S 3 K DETAIL Z G A A TOP VIEW DIM A B C D G H J K M S DETAIL Z J C 0.05 H C SIDE VIEW SEATING PLANE END VIEW GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 0.95 0.037 MILLIMETERS MIN MAX 2.85 3.15 1.35 1.65 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 1.9 0.074 5 5 XXXAYWG G 1 1 Analog 2.4 0.094 XXX = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package 1.0 0.039 XXX MG G Discrete/Logic XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ARB18753C TSOP−5 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK 8 1 SCALE 1:1 −X− DATE 16 FEB 2011 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S 8 8 1 1 IC 4.0 0.155 XXXXX A L Y W G IC (Pb−Free) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package XXXXXX AYWW 1 1 Discrete XXXXXX AYWW G Discrete (Pb−Free) XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 1.270 0.050 SCALE 6:1 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 8 8 XXXXX ALYWX G XXXXX ALYWX 1.52 0.060 0.6 0.024 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 7.0 0.275 DIM A B C D G H J K M N S mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−8 NB CASE 751−07 ISSUE AK DATE 16 FEB 2011 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER STYLE 2: PIN 1. COLLECTOR, DIE, #1 2. COLLECTOR, #1 3. COLLECTOR, #2 4. COLLECTOR, #2 5. BASE, #2 6. EMITTER, #2 7. BASE, #1 8. EMITTER, #1 STYLE 3: PIN 1. DRAIN, DIE #1 2. DRAIN, #1 3. DRAIN, #2 4. DRAIN, #2 5. GATE, #2 6. SOURCE, #2 7. GATE, #1 8. SOURCE, #1 STYLE 4: PIN 1. ANODE 2. ANODE 3. ANODE 4. ANODE 5. ANODE 6. ANODE 7. ANODE 8. COMMON CATHODE STYLE 5: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. DRAIN 5. GATE 6. GATE 7. SOURCE 8. SOURCE STYLE 6: PIN 1. SOURCE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. GATE 7. GATE 8. SOURCE STYLE 7: PIN 1. INPUT 2. EXTERNAL BYPASS 3. THIRD STAGE SOURCE 4. GROUND 5. DRAIN 6. GATE 3 7. SECOND STAGE Vd 8. FIRST STAGE Vd STYLE 8: PIN 1. COLLECTOR, DIE #1 2. BASE, #1 3. BASE, #2 4. COLLECTOR, #2 5. COLLECTOR, #2 6. EMITTER, #2 7. EMITTER, #1 8. COLLECTOR, #1 STYLE 9: PIN 1. EMITTER, COMMON 2. COLLECTOR, DIE #1 3. COLLECTOR, DIE #2 4. EMITTER, COMMON 5. EMITTER, COMMON 6. BASE, DIE #2 7. BASE, DIE #1 8. EMITTER, COMMON STYLE 10: PIN 1. GROUND 2. BIAS 1 3. OUTPUT 4. GROUND 5. GROUND 6. BIAS 2 7. INPUT 8. GROUND STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 14: PIN 1. N−SOURCE 2. N−GATE 3. P−SOURCE 4. P−GATE 5. P−DRAIN 6. P−DRAIN 7. N−DRAIN 8. N−DRAIN STYLE 15: PIN 1. ANODE 1 2. ANODE 1 3. ANODE 1 4. ANODE 1 5. CATHODE, COMMON 6. CATHODE, COMMON 7. CATHODE, COMMON 8. CATHODE, COMMON STYLE 16: PIN 1. EMITTER, DIE #1 2. BASE, DIE #1 3. EMITTER, DIE #2 4. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE #1 8. COLLECTOR, DIE #1 STYLE 17: PIN 1. VCC 2. V2OUT 3. V1OUT 4. TXE 5. RXE 6. VEE 7. GND 8. ACC STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE STYLE 19: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. MIRROR 2 7. DRAIN 1 8. MIRROR 1 STYLE 20: PIN 1. SOURCE (N) 2. GATE (N) 3. SOURCE (P) 4. GATE (P) 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 21: PIN 1. CATHODE 1 2. CATHODE 2 3. CATHODE 3 4. CATHODE 4 5. CATHODE 5 6. COMMON ANODE 7. COMMON ANODE 8. CATHODE 6 STYLE 22: PIN 1. I/O LINE 1 2. COMMON CATHODE/VCC 3. COMMON CATHODE/VCC 4. I/O LINE 3 5. COMMON ANODE/GND 6. I/O LINE 4 7. I/O LINE 5 8. COMMON ANODE/GND STYLE 23: PIN 1. LINE 1 IN 2. COMMON ANODE/GND 3. COMMON ANODE/GND 4. LINE 2 IN 5. LINE 2 OUT 6. COMMON ANODE/GND 7. COMMON ANODE/GND 8. LINE 1 OUT STYLE 24: PIN 1. BASE 2. EMITTER 3. COLLECTOR/ANODE 4. COLLECTOR/ANODE 5. CATHODE 6. CATHODE 7. COLLECTOR/ANODE 8. COLLECTOR/ANODE STYLE 25: PIN 1. VIN 2. N/C 3. REXT 4. GND 5. IOUT 6. IOUT 7. IOUT 8. IOUT STYLE 26: PIN 1. GND 2. dv/dt 3. ENABLE 4. ILIMIT 5. SOURCE 6. SOURCE 7. SOURCE 8. VCC STYLE 29: PIN 1. BASE, DIE #1 2. EMITTER, #1 3. BASE, #2 4. EMITTER, #2 5. COLLECTOR, #2 6. COLLECTOR, #2 7. COLLECTOR, #1 8. COLLECTOR, #1 STYLE 30: PIN 1. DRAIN 1 2. DRAIN 1 3. GATE 2 4. SOURCE 2 5. SOURCE 1/DRAIN 2 6. SOURCE 1/DRAIN 2 7. SOURCE 1/DRAIN 2 8. GATE 1 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB STYLE 27: PIN 1. ILIMIT 2. OVLO 3. UVLO 4. INPUT+ 5. SOURCE 6. SOURCE 7. SOURCE 8. DRAIN STYLE 28: PIN 1. SW_TO_GND 2. DASIC_OFF 3. DASIC_SW_DET 4. GND 5. V_MON 6. VBULK 7. VBULK 8. VIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−14 NB CASE 751A−03 ISSUE L 14 1 SCALE 1:1 D DATE 03 FEB 2016 A B 14 8 A3 E H L 1 0.25 B M DETAIL A 7 13X M b 0.25 M C A S B S 0.10 X 45 _ M A1 e DETAIL A h A C SEATING PLANE DIM A A1 A3 b D E e H h L M MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.19 0.25 0.35 0.49 8.55 8.75 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ INCHES MIN MAX 0.054 0.068 0.004 0.010 0.008 0.010 0.014 0.019 0.337 0.344 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.019 0.016 0.049 0_ 7_ GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 6.50 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 14 14X 1.18 XXXXXXXXXG AWLYWW 1 1 1.27 PITCH XXXXX A WL Y WW G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 14X 0.58 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−14 CASE 751A−03 ISSUE L DATE 03 FEB 2016 STYLE 1: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. NO CONNECTION 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. NO CONNECTION 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 2: CANCELLED STYLE 3: PIN 1. NO CONNECTION 2. ANODE 3. ANODE 4. NO CONNECTION 5. ANODE 6. NO CONNECTION 7. ANODE 8. ANODE 9. ANODE 10. NO CONNECTION 11. ANODE 12. ANODE 13. NO CONNECTION 14. COMMON CATHODE STYLE 4: PIN 1. NO CONNECTION 2. CATHODE 3. CATHODE 4. NO CONNECTION 5. CATHODE 6. NO CONNECTION 7. CATHODE 8. CATHODE 9. CATHODE 10. NO CONNECTION 11. CATHODE 12. CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 5: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. NO CONNECTION 7. COMMON ANODE 8. COMMON CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 6: PIN 1. CATHODE 2. CATHODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE 7. CATHODE 8. ANODE 9. ANODE 10. ANODE 11. ANODE 12. ANODE 13. ANODE 14. ANODE STYLE 7: PIN 1. ANODE/CATHODE 2. COMMON ANODE 3. COMMON CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. ANODE/CATHODE 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. COMMON CATHODE 12. COMMON ANODE 13. ANODE/CATHODE 14. ANODE/CATHODE STYLE 8: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. ANODE/CATHODE 7. COMMON ANODE 8. COMMON ANODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. NO CONNECTION 12. ANODE/CATHODE 13. ANODE/CATHODE 14. COMMON CATHODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS Micro8 CASE 846A−02 ISSUE K DATE 16 JUL 2020 SCALE 2:1 GENERIC MARKING DIAGRAM* 8 XXXX AYWG G 1 XXXX A Y W G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB14087C MICRO8 STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1 STYLE 3: PIN 1. 2. 3. 4. 5. 6. 7. 8. N-SOURCE N-GATE P-SOURCE P-GATE P-DRAIN P-DRAIN N-DRAIN N-DRAIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP−14 WB CASE 948G ISSUE C 14 DATE 17 FEB 2016 1 SCALE 2:1 14X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S S S N 2X 14 L/2 0.25 (0.010) 8 M B −U− L PIN 1 IDENT. N F 7 1 0.15 (0.006) T U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. S DETAIL E K A −V− K1 J J1 ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ SECTION N−N −W− C 0.10 (0.004) −T− SEATING PLANE H G D DETAIL E DIM A B C D F G H J J1 K K1 L M MILLIMETERS INCHES MIN MAX MIN MAX 4.90 5.10 0.193 0.200 4.30 4.50 0.169 0.177 −−− 1.20 −−− 0.047 0.05 0.15 0.002 0.006 0.50 0.75 0.020 0.030 0.65 BSC 0.026 BSC 0.50 0.60 0.020 0.024 0.09 0.20 0.004 0.008 0.09 0.16 0.004 0.006 0.19 0.30 0.007 0.012 0.19 0.25 0.007 0.010 6.40 BSC 0.252 BSC 0_ 8_ 0_ 8_ GENERIC MARKING DIAGRAM* 14 SOLDERING FOOTPRINT XXXX XXXX ALYWG G 7.06 1 1 0.65 PITCH 14X 0.36 14X 1.26 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: 98ASH70246A DESCRIPTION: TSSOP−14 WB A L Y W G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP−8 CASE 948S−01 ISSUE C DATE 20 JUN 2008 SCALE 2:1 K REF 8x 0.20 (0.008) T U 0.10 (0.004) S 2X L/2 8 0.20 (0.008) T U T U B −U− 1 J J1 4 V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. S ÇÇÇÇ ÉÉÉÉ ÉÉÉÉ ÇÇÇÇ ÉÉÉÉ ÇÇÇÇ K1 K A −V− S S 5 L PIN 1 IDENT M SECTION N−N −W− C 0.076 (0.003) D −T− SEATING DETAIL E G PLANE 0.25 (0.010) N M DIM A B C D F G J J1 K K1 L M N F MILLIMETERS MIN MAX 2.90 3.10 4.30 4.50 --1.10 0.05 0.15 0.50 0.70 0.65 BSC 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.114 0.122 0.169 0.177 --0.043 0.002 0.006 0.020 0.028 0.026 BSC 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ GENERIC MARKING DIAGRAM* XXX YWW AG G DETAIL E XXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: STATUS: 98AON00697D ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 TSSOP−8 http://onsemi.com 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98AON00697D PAGE 2 OF 2 ISSUE REVISION DATE O RELEASED FOR PRODUCTION. 18 APR 2000 A ADDED MARKING DIAGRAM INFORMATION. REQ. BY V. BASS. 13 JAN 2006 B CORRECTED MARKING DIAGRAM PIN 1 LOCATION AND MARKING. REQ. BY C. REBELLO. 13 MAR 2006 C REMOVED EXPOSED PAD VIEW AND DIMENSIONS P AND P1. CORRECTED MARKING INFORMATION. REQ. BY C. REBELLO. 20 JUN 2008 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. © Semiconductor Components Industries, LLC, 2008 June, 2008 − Rev. 01C Case Outline Number: 948S onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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NCS20072DR2G 价格&库存

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NCS20072DR2G
  •  国内价格 香港价格
  • 1+11.158371+1.38419
  • 10+6.6830610+0.82903
  • 25+5.5770125+0.69183
  • 100+4.36329100+0.54127
  • 250+3.78206250+0.46917
  • 500+3.43080500+0.42559
  • 1000+3.140711000+0.38961

库存:15105

NCS20072DR2G
  •  国内价格
  • 1+2.28800
  • 30+2.20800
  • 100+2.04800
  • 500+1.88800
  • 1000+1.80800

库存:1