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NCS213RMUTAG

NCS213RMUTAG

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    UFQFN10

  • 描述:

    IC CURR SENSE 1 CIRCUIT 10UQFN

  • 数据手册
  • 价格&库存
NCS213RMUTAG 数据手册
DATA SHEET www.onsemi.com Current-Shunt Monitors, Voltage Output, Bidirectional Zero-Drift, Low- or High-Side Current Sensing NCS210R, NCS211R, NCS213R, NCS214R, SC70−6 SQ SUFFIX CASE 419B MARKING DIAGRAM 6 XXMG G XXXMG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS REF GND OUT REF Features *NC 1 *NC IN+ Vs IN− IN− IN+ Wide Common Mode Input Range: −0.3 V to 26 V Supply Voltage Range: 2.2 V to 26 V Low Offset Voltage: ±35 mV max Low Offset Drift: 0.5 mV/°C Low Gain Error: 1% max Low Gain Error Drift: 10 ppm/°C max Rail−to−Rail Output Capability Low Current Consumption: 40 mA typ, 80 mA max NCV Prefix for Automotive and Other Applications Requiring Unique Site Qualified and PPAP Capable 1 OUT GND IN− Vs IN+ (Top Views) *NC denotes no internal connection. These pins can be left floating or connected to any voltage between VS and GND. ORDERING INFORMATION See detailed ordering, marking and shipping information on page 2 of this data sheet. Typical Applications • • • • • 1 UQFN10 MU SUFFIX CASE 488AT NCV210R, NCV211R, NCV213R, NCV214R The NCS210R, NCS211R, NCS213R and NCS214R are voltage output, current shunt monitors (also called current sense amplifiers) which can measure voltage across shunts at common−mode voltages from −0.3 V to 26 V, independent of supply voltage. The low offset of the zero−drift architecture enables current sensing across the shunt with maximum voltage drop as low as 10 mV full−scale. These devices can operate from a single +2.2 V to +26 V power supply, drawing a maximum of 80 mA of supply current, and are specified over the extended operating temperature range (–40°C to +125°C). Available in the SC70−6 and UQFN10 packages. • • • • • • • • • 1 Current Sensing (High−Side/Low−Side) Automotive Telecom Power Management Battery Charging and Discharging © Semiconductor Components Industries, LLC, 2018 August, 2021 − Rev. 8 1 Publication Order Number: NCS210R/D NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R Supply R SHUNT Load NCS21xR R1 R3 - IN- Output OUT + IN+ Reference Voltage R4 VS GND REF R2 +2.2 V to +26 V 0.01 uF To 0.1 uF V OUT + ǒI LOAD R SHUNTǓGAIN ) V REF Figure 1. Example Application Schematic of High−Side Current Sensing ORDERING INFORMATION Gain R3 and R4 R1 and R2 Marking Package Shipping† NCS210RSQT2G 200 5 kW 1 MW AVY SC70−6 3000 / Tape and Reel NCV210RSQT2G* 200 5 kW 1 MW AVY SC70−6 3000 / Tape and Reel NCS210RMUTAG 200 5 kW 1 MW CP UQFN10 3000 / Tape and Reel NCS211RSQT2G 500 2 kW 1 MW AVZ SC70−6 3000 / Tape and Reel NCV211RSQT2G* 500 2 kW 1 MW AVZ SC70−6 3000 / Tape and Reel NCS213RSQT2G 50 20 kW 1 MW AV3 SC70−6 3000 / Tape and Reel NCV213RSQT2G* 50 20 kW 1 MW AV3 SC70−6 3000 / Tape and Reel NCS214RSQT2G 100 10 kW 1 MW AV4 SC70−6 3000 / Tape and Reel NCV214RSQT2G* 100 10 kW 1 MW AV4 SC70−6 3000 / Tape and Reel NCS214RMUTAG 100 10 kW 1 MW CR UQFN10 3000 / Tape and Reel NCS211RMUTAG 500 2 kW 1 MW CM UQFN10 3000 / Tape and Reel NCS213RMUTAG 50 20 kW 1 MW CQ UQFN10 3000 / Tape and Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. www.onsemi.com 2 NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R Table 1. MAXIMUM RATINGS Parameter Supply Voltage (Note 1) Analog Inputs Differential (VIN+)−(VIN−) Symbol Value Unit VS +30 V VIN+, VIN− −30 to +30 V Common−Mode (Note 2) (GND−0.3) to +30 REF Input VREF (GND−0.3) to (Vs +0.3) V Output (Note 2) VOUT (GND−0.3) to (Vs +0.3) V 5 mA Input Current into Any Pin (Note 2) Maximum Junction Temperature TJ(max) +150 °C Storage Temperature Range TSTG −65 to +150 °C ESD Capability, Human Body Model (Note 3) HBM ±2000 V Charged Device Model (Note 3) CDM ±2000 V ILU 100 mA Latch−Up Current (Note 4) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe operating parameters. 2. Input voltage at any pin may exceed the voltage shown if current at that pin is limited to 5 mA. 3. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per JEDEC standard JS−001−2017 (AEC−Q100−002). ESD Charged Device Model tested per JEDEC standard JS−002−2014 (AEC−Q100−011). 4. Latch−up Current tested per JEDEC standard JESD78E (AEC−Q100−004) Table 2. RECOMMENDED OPERATING RANGES Parameter Symbol Min Typ Max Unit VCM −0.3 12 26 V Supply Voltage VS 2.2 5 26 V Ambient Temperature TA −40 125 °C Common−mode input voltage Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Table 3. THERMAL CHARACTERISTICS (Note 5) Parameter Thermal Resistance, Junction−to−Air (Note 6) SC70 UQFN10 Symbol Value Unit RqJA 250 150 °C/W 5. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe operating parameters. 6. Values based on copper area of 645 mm2 (or 1 in2) of 1 oz copper thickness and FR4 PCB substrate. www.onsemi.com 3 NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R Table 4. ELECTRICAL CHARACTERISTICS At TA = +25°C, VSENSE = VIN+ − VIN−; NCS210R, NCS213R and NCS214R: VS = +5 V, VIN+ = 12 V, and VREF = VS/2, unless otherwise noted. NCS211R: VS = +12 V, VIN+ = 12 V, and VREF = VS/2, unless otherwise noted. Boldface limits apply over the specified temperature range of TA = −40°C to 125°C, guaranteed by characterization and/or design. Symbol Parameter Test Conditions Min Typ Max Unit INPUT VCM CMRR Common−Mode Input Voltage Range Common−Mode Rejection Ratio NCx210R, NCx211R, NCx214R −0.3 VIN+ = 0 V to +26 V, VSENSE = 0 mV TA = −40°C to 125°C) NCx213R VOS dVOS/dT PSRR Offset Voltage RTI (Note 7) RTI vs Temperature (Note 7) NCx210R, NCx211R 26 105 125 100 120 VSENSE = 0 mV V dB ±0.55 ±35 NCx213R ±5 ±100 NCx214R ±1 ±60 VSENSE = 0 mV TA = –40°C to +125°C 0.1 0.5 mV/°C VS = +2.7 V to +26 V, VIN+ =18 V, VSENSE = 0 mV ±0.1 ±10 mV/V 60 mA NCx21xR RTI vs Power Supply Ratio (Note 7) mV IIB Input Bias Current VSENSE = 0 mV 39 IIO Input Offset Current VSENSE = 0 mV ±0.1 mA NCx210R 200 V/V NCx211R 500 NCx213R 50 OUTPUT G Gain NCx214R EG Gain Error NCx21xR EG Gain Error vs Temperature NCx21xR Nonlinearity Error CL Maximum Capacitive Load 100 VSENSE = −5 mV to 5 mV, TA = −40°C to 125°C ±0.2 +1 % 10 ppm/°C TA = −40°C to 125°C 3 VSENSE = −5 mV to 5 mV ±0.01 % No sustained oscillation 1 nF RL = 10 kW to GND TA = –40°C to +125°C (Note 8) VS − 0.075 VS − 0.2 V RL = 10 kW to GND TA = –40°C to +125°C VGND +0.005 VGND +0.05 V CLOAD = 10 pF 40 VOLTAGE OUTPUT VOH Swing to VS Power Supply Rail VOL Swing to GND FREQUENCY RESPONSE BW SR Bandwidth (f−3dB) NCx210R NCx211R 25 NCx213R 90 NCx214R 60 Slew Rate kHz 1 V/ms NOISE en Voltage Noise Density f = 1 kHz 45 POWER SUPPLY VS Operating Voltage Range IQ Quiescent Current Quiescent Current over Temperature TA = –40°C to +125°C VSENSE = 0 mV TA = –40°C to +125°C 2.2 40 26 V 80 mA 100 mA 7. RTI = referenced−to−input 8. VS = 5 V for NCx211R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R TYPICAL CHARACTERISTICS (TA = 25°C, VS = 5 V, VIN+ = 12 V and VREF = VS/2 unless otherwise noted.) (The NCS210R is used for Typical Characteristics) 100 1800 80 INPUT OFFSET VOLTAGE (mV) 2000 POPULATION 1600 1400 1200 1000 800 600 400 200 0 −35 −30 −25 −20 −15 −10 −5 0 10 15 20 25 30 35 5 20 0 −20 −40 −60 −80 −100 −50 −10 0 25 85 125 150 Figure 2. Input Offset Voltage Production Distribution Figure 3. Input Offset Voltage vs. Temperature 4500 5 4000 4 3000 2500 2000 1500 1000 500 0 −5 −40 TEMPERATURE (°C) COMMON−MODE REJECTION RATIO (mV/V) POPULATION 40 INPUT OFFSET VOLTAGE (mV) 3500 −4 −3 −2 −1 0 1 2 3 4 5 3 2 1 0 −1 −2 −3 −4 −5 −50 −40 −10 0 25 85 125 150 COMMON−MODE REJECTION RATIO (mV/V) TEMPERATURE (°C) Figure 4. Common−Mode Rejection Production Distribution Figure 5. Common−Mode Rejection Ratio vs. Temperature 9000 1.0 8000 0.8 7000 0.6 GAIN ERROR (%) POPULATION 60 6000 5000 4000 3000 0.4 0.2 0 −0.2 −0.4 2000 −0.6 1000 −0.8 −1.0 −50 0 −1.0 −0.8 −0.6 −0.4 −0.2 0 0.2 0.4 0.6 0.8 1.0 −40 −10 0 25 85 125 GAIN ERROR (%) TEMPERATURE (°C) Figure 6. Gain Error Production Distribution Figure 7. Gain Error vs. Temperature www.onsemi.com 5 150 NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R TYPICAL CHARACTERISTICS (TA = 25°C, VS = 5 V, VIN+ = 12 V and VREF = VS/2 unless otherwise noted.) 70 60 40 30 20 NCS210R NCS211R NCS213R NCS214R 10 0 COMMON−MODE REJECTION RATIO (dB) −10 10 100 1k 10k 100k 1M 10M 140 120 100 80 60 VS = 5 V + 250 mVpp VCM = 0 V VREF = 2.5 V VDIF = shorted CL = 15 pF 40 20 0 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure 9. Power Supply Rejection Ratio vs. Frequency 160 V+ 140 V(+)−0.5 120 100 80 60 VS = 5 V Sine Disturbance = 1 Vpp VCM = 12 V VREF = 2.5 V CL = 15 pF 40 20 0 160 Figure 8. Gain vs. Frequency OUTPUT VOLTAGE (V) GAIN (dB) 50 POWER SUPPLY REJECTION RATIO (dB) (The NCS210R is used for Typical Characteristics) 10 100 1k V(+)−1.0 V(+)−1.5 −40°C V(+)−2.0 125°C 25°C V(+)−2.5 10k 100k V(+)−3.0 1M 0 2 4 6 8 10 12 FREQUENCY (Hz) OUTPUT CURRENT (mA) Figure 10. Common−Mode Rejection Ratio vs. Frequency Figure 11. Positive Output Voltage Swing vs. Output Current, VS = 2.2 V 14 V+ GND+3.0 OUTPUT VOLTAGE (V) 125°C 25°C OUTPUT VOLTAGE (V) V(+)−0.5 GND+2.5 −40°C GND+2.0 GND+1.5 GND+1.0 V(+)−1.0 V(+)−1.5 V(+)−2.0 GND+0.5 V(+)−2.5 GND V(+)−3.0 0 2 4 6 8 10 12 14 −40°C 125°C 0 2 4 6 8 10 25°C 12 14 16 18 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 12. Negative Output Voltage Swing vs. Output Current, VS = 2.2 V Figure 13. Positive Output Voltage Swing vs. Output Current, VS = 2.7 V www.onsemi.com 6 20 NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R TYPICAL CHARACTERISTICS (TA = 25°C, VS = 5 V, VIN+ = 12 V and VREF = VS/2 unless otherwise noted.) (The NCS210R is used for Typical Characteristics) V+ GND+3.0 125°C −40°C V(+)−0.5 OUTPUT VOLTAGE (V) GND+2.5 OUTPUT VOLTAGE (V) 25°C GND+2.0 GND+1.5 GND+1.0 0 2 4 8 6 10 12 14 16 18 V(+)−3.0 20 0 2 4 6 8 10 12 25°C 14 16 −40°C 18 20 22 24 Figure 14. Negative Output Voltage Swing vs. Output Current, VS = 2.7 V Figure 15. Positive Output Voltage Swing vs. Output Current, VS = 5 V 25°C 125°C V+ −40°C V(+)−0.5 OUTPUT VOLTAGE (V) GND+2.0 GND+1.5 GND+1.0 V(+)−1.0 V(+)−1.5 V(+)−2.0 GND+0.5 V(+)−2.5 GND V(+)−3.0 0 2 4 6 8 10 12 14 16 18 20 22 24 125°C 0 2 4 6 8 10 12 25°C 14 16 −40°C 18 20 22 24 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 16. Negative Output Voltage Swing vs. Output Current, VS = 5 V Figure 17. Positive Output Voltage Swing vs. Output Current, VS = 26 V GND+3.0 25°C 70 −40°C INPUT BIAS CURRENT (mA) 125°C GND+2.5 GND+2.0 GND+1.5 GND+1.0 GND+0.5 GND 125°C OUTPUT CURRENT (mA) GND+2.5 OUTPUT VOLTAGE (V) V(+)−2.0 OUTPUT CURRENT (mA) GND+3.0 OUTPUT VOLTAGE (V) V(+)−1.5 V(+)−2.5 GND+0.5 GND V(+)−1.0 0 2 4 6 8 10 12 14 16 18 20 22 24 60 IB+, IB−, VREF = 0 V 50 IB+, IB−, VREF = 2.5 V 40 30 20 10 0 −10 0 5 10 15 20 25 OUTPUT CURRENT (mA) COMMON−MODE VOLTAGE (V) Figure 18. Negative Output Voltage Swing vs. Output Current, VS = 26 V Figure 19. Input Bias Current vs. Common−Mode Voltage with VS = 5 V www.onsemi.com 7 30 NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R TYPICAL CHARACTERISTICS (TA = 25°C, VS = 5 V, VIN+ = 12 V and VREF = VS/2 unless otherwise noted.) (The NCS210R is used for Typical Characteristics) 45 IB+, IB−, VREF = 0 V 25 INPUT BIAS CURRENT (mA) INPUT BIAS CURRENT (mA) 30 20 IB+, VREF = 2.5 V 15 IB−, VREF = 2.5 V 10 5 0 −5 0 5 10 15 20 25 25 20 15 10 0 −50 −40 −10 0 25 85 125 150 COMMON−MODE VOLTAGE (V) TEMPERATURE (°C) Figure 20. Input Bias Current vs. Common−Mode Voltage with VS = 0 V (Shutdown) Figure 21. Input Bias Current vs. Temperature VOLTAGE NOISE DENSITY (nV/√Hz) QUIESCENT CURRENT (mA) 30 30 90 80 70 60 50 40 30 20 10 0 −50 −40 −10 0 25 85 125 10 NCS210R NCS211R NCS213R NCS214R 1 1 10 VS = ±2.5 V VREF = 0 V VIN−, VIN+ = 0 V RL = 10 kW 100 1k 10k 100k TEMPERATURE (°C) FREQUENCY (Hz) Figure 22. Quiescent Current vs. Temperature Figure 23. Voltage Noise Density vs. Frequency OUTPUT VOLTAGE (0.5 V/div) VS = ±2.5 V VREF = 0 V VIN−, VIN+ = 0 V RL = 10 kW 800 600 400 200 0 INPUT VOLTAGE (5 mV/div) −200 −400 −600 0 100 150 1000 VOLTAGE (nV) 35 5 100 −800 −1000 40 1 2 3 4 5 6 7 8 9 10 −0.2 −0.1 0 OUTPUT INPUT 0.1 0.2 0.3 0.4 0.5 TIME (s) TIME (s) Figure 24. 0.1 Hz to 10 Hz Voltage Noise (Referred to Input) Figure 25. Step Response (10 mVpp Input Step) www.onsemi.com 8 0.6 0.7 0.8 NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R TYPICAL CHARACTERISTICS (TA = 25°C, VS = 5 V, VIN+ = 12 V and VREF = VS/2 unless otherwise noted.) (The NCS210R is used for Typical Characteristics) 200 INPUT VOLTAGE (V) 6 150 INPUT 5 100 4 50 3 0 OUTPUT 2 −50 1 −100 0 −150 −1 −2 −100 −50 0 50 12 8 6 4 2 Output 0 −200 −250 100 150 200 250 300 350 400 −2 −200 0 200 400 600 800 1000 1200 1400 TIME (ms) TIME (ms) Figure 26. Common−Mode Voltage Transient Response Figure 27. Inverting Differential Input Overload 6 12 Noninverting Input 10 VOLTAGE (V) 4 6 Output 4 3 1 0 0 0 200 400 600 800 1000 Output Voltage 2 2 VDIFF = 0 V VREF = 0 V −1 −200 −100 0 1200 1400 100 200 300 400 500 600 700 800 TIME (ms) TIME (ms) Figure 28. Noninverting Differential Input Overload Figure 29. Start−Up Response 6 Supply Voltage 5 VOLTAGE (V) −2 −200 Supply Voltage 5 8 VOLTAGE (V) Inverting Input 10 VOLTAGE (V) 250 OUTPUT VOLTAGE (mV) 8 7 4 3 Output Voltage 2 1 0 −200 −100 0 VDIFF = 0 V VREF = 2.5 V 100 200 300 400 500 600 700 TIME (ms) Figure 30. Brownout Recovery www.onsemi.com 9 800 NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R Basic Connections Current Sensing Techniques current monitoring. Figure 31 shows the NCS21xR circuit implementation for unidirectional operation using high−side current sensing. Basic connections for unidirectional operation include connecting the load power supply, connecting a current shunt to the differential inputs of the NCS21xR, grounding the REF pin, and providing a power supply for the NCS21xR. The NCS21xR can be connected to the same power supply that it is monitoring current from, or it can be connected to a separate power supply. If it is necessary to detect short circuit current on the load power supply, which may cause the load power supply to sag to near zero volts, a separate power supply must be used on the NCS21xR. When using multiple supplies, there are no restrictions on power supply sequencing. When no current is flowing though the RSHUNT, and the REF pin is connected to ground, the NCS21xR output is expected to be within 50 mV of ground. When current is flowing through RSHUNT, the output will swing positive, up to within 200 mV of the applied supply voltage, VS. The NCS21xR current−sense amplifiers can be configured for both low−side and high−side current sensing. Low−side sensing appears to have the advantage of being straightforward, inexpensive, and can be implemented with a simple op amp circuit. However, the NCS21xR series of devices provides the full differential input necessary to get accurate shunt connections, while also providing a built−in gain network with precision difficult to obtain with external resistors. While at times the application requires low−side sensing, only high−side sensing can detect a short from the positive supply line to ground. Furthermore, high−side sensing avoids adding resistance to the ground path of the load being measured. The sections below focus primarily on high−side current sensing. Unidirectional Operation In unidirectional current sensing, the current always flows in the same direction. Common applications for unidirectional operation include power supplies and load Supply RSHUNT Load NCS21xR R1 R3 - IN- OUT Output + IN+ R4 VS GND REF R2 +2.2 V to +26 V 0.01uF To 0.1uF Figure 31. Basic Unidirectional Connection Bidirectional Operation REF pin. The voltage applied to the REF pin depends on the application. However, most often it is biased to either half of the supply voltage or to half the value of the measurement system reference. Figure 32 shows bidirectional operation with three different circuit choices that can be connected to the REF pin to provide a voltage reference to the NCS21xR. In bidirectional current sensing, the current measurements are taken when current is flowing in both directions. For example, in fuel gauging, the current is measured when the battery is being charged or discharged. Bidirectional operation requires the output to swing both positive and negative around a bias voltage applied to the www.onsemi.com 10 NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R Supply R SHUNT Load NCS21xR R1 R3 IN- - IN+ + Output OUT R4 REF Vs +2.2 V to +26 V 0.01uF To 0.1uF Connect to any one of 3 possible circuits shown GND R2 Supply Supply Supply (a) - Series Reference Shunt Reference or zener + Op Amp (e.g. NCS2003, NCS20071) (b) (c) (d) Figure 32. Bidirectional Current Sensing with Three Example Voltage Reference Circuits Input and Output Filtering The REF pin must always be connected to a low impedance circuit, such as in the Figure 32(b), (c), and (d). The REF pin can be connected directly to any voltage supply or voltage reference (shunt or series). However, if a resistor divider network is used to provide the reference voltage, a unity gain buffer circuit must be used, as shown in Figure 32(d). In bidirectional applications, any voltage that exceeds VS+0.3 V applied to the REF pin will forward bias an ESD diode between the REF pin and the VS pin. Note that this exceeds the Absolute Maximum Ratings for the device. Filtering at the input or output may be required for several different reasons. In this section we will discuss the main considerations with regards to these filter circuits. In some applications, the current being measured may be inherently noisy. In the case of a noisy signal, filtering after the output of the current sense amplifier is often simpler, especially where the amplifier output is fed into high impedance circuitry. The amplifier output node provides the greatest freedom when selecting components for the filter and is very straightforward to implement, although it may require subsequent buffering. Other applications may require filtering at the input of the current sense amplifier. Figure 33 shows the recommended schematic for input filtering. www.onsemi.com 11 NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R NCS21xR RFILT1 10W RSHUNT 200mW 1nH CFILT 0.25mF IN- - IN+ + OUT Reference Voltage RFILT2 10W GND REF VS Figure 33. Input filtering compensates for shunt inductance on shunts less than 1 mW, as well as high frequency noise in any application high frequency spike transient events on the current sensing line that can overload the front end of any shunt current sensing IC. This problem must be solved by filtering at the input of the amplifier. Note that all current sensing IC’s are vulnerable to this problem, regardless of manufacturer claims. Filtering is required at the input of the device to resolve this problem, even if the spike frequencies are above the rated bandwidth of the device. Input filtering is complicated by the fact that the added resistance of the filter resistors and the associated resistance mismatch between them can adversely affect gain, CMRR, and VOS. The effect on VOS is partly due to input bias currents as well. As a result, the value of the input resistors should be limited to 10 W or less. Ideally, select the capacitor to exactly match the time constant of the shunt resistor and its inductance; alternatively, select the capacitor to provide a pole below that point. As an example, a filtering frequency of 100 kHz would require an 80 nF capacitor. The capacitor can have a low voltage rating, but should have good high frequency characteristics. Make the input filter time constant equal to or larger than the shunt and its inductance time constant: Advantages When Used for Low−Side Current Sensing The NCS21xR series offer many advantages for low−side current sensing. The true differential input is ideal for connection to either Kelvin Sensing shunts or conventional shunts. Additionally, the true differential input rejects the common−mode noise often present even in low−side current sensing. The NCS21xR also provides a reference pin to set the output offset from an external reference. Providing all of these features in a tiny package makes the NCS21xR very competitive when compared to discrete op amp solutions. L SHUNT v 2 @ R FILT @ C FILT R SHUNT This simplifies to determine the value of CFILT based on using 10 W resistors for each RFILT: C FILT w L SHUNT 20R SHUNT Designing for Input Transients Exceeding 30 Volts For applications that have transient common−mode voltages greater than 30 volts, external input resistors of 10 W provide a convenient location to add either Zener diodes or transient voltage suppression diodes (also known as TVS diodes). There are two possible configurations: one using a single TVS diode with diodes across the amplifier inputs as shown in Figure 34, and the second configuration using two TVS diodes as shown in Figure 35. If the main purpose is to filter high frequency noise, the capacitor should be increased to a value that provides the desired filtering. As the shunt resistors decrease in value, shunt inductance can significantly affect frequency response. At values below 1 mW, the shunt inductance causes a zero in the transfer function that often results in corner frequencies in the low 100’s of kHz. This inductance increases the amplitude of www.onsemi.com 12 NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R NCS21xR RFILT1 10W RSHUNT 200mW 1nH D1, D2 1N4148 IN- - IN+ + OUT Reference Voltage RFILT2 10W GND REF VS TVS1 onsemi SMBJ18(C)A Figure 34. Single TVS transient common−mode protection TVS1 onsemi SMBJ18(C)A NCS21xR RFILT1 10W RSHUNT 200mW 1nH IN- - IN+ + OUT Reference Voltage RFILT2 10W GND REF VS TVS2 onsemi SMBJ18(C)A Figure 35. Dual TVS Transient Common−mode Protection Selecting the Shunt Resistor Use Zener diodes or unidirectional TVS diodes with clamping voltage ratings up to a maximum of 30 volts. Select TVS diodes with the lowest voltage rating possible for use in the system. There is a wide range between standoff voltage and maximum clamping voltage in TVS diodes. Most diodes rated at a standoff voltage of 18 V have a maximum clamping voltage of 29.2 V. Refer to the TVS data sheet and the parameters of your power supply to make the selection. In general, higher power TVS diodes demonstrate a sharper clamping knee; providing a tighter relationship between rated breakdown and maximum clamping voltage. The desired accuracy of the current measurement determines the precision, shunt size, and the resistor value. The larger the resistor value, the more accurate the measurement possible, but a large resistor value also results in greater current loss. For the most accurate measurements, use four terminal current sense resistors, as shown in Figure 36. It provides two terminals for the current path in the application circuit, and a second pair for the voltage detection path of the sense amplifier. This technique is also known as Kelvin Sensing. This insures that the voltage measured by the sense amplifier is the actual voltage across the resistor and does not include the small resistance of a combined connection. When using non−Kelvin shunts, follow manufacturer recommendations on how to lay out the sensing traces closely. www.onsemi.com 13 NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R Current Output Configuration In applications where the readout boards are remotely located, the voltage output of the NCS21xR can be converted to a precision current output. The precision output current measurements are read more accurately as it overcomes the errors due to ground drops between the boards. Figure 36. Surface Mount Kelvin Shunt System Data Readout Board Current Measurement Circuit Board RITOV 1kW NCS21xR RIOUT 1kW - IN- V=I*R IIOUT + IN+ + - OUT ADC Line Receiver (e.g. NCS2003) GND REF VS Stray ground resistance between boards Figure 37. Remote Current Sensing As shown in Figure 37, the RIOUT resistor is added between the OUT pin and the REF pin to convert the voltage output to a current output which is taken from the REF pin to the readout board. This circuit is intended to function with low potentials between the boards due to ground drops or noise. The current output is simply the relationship of the normal output voltage of the NCS21xR: I OUT + overcome most ground voltage drop, stray voltages, and noise. However, accuracy will degrade if noise or ground drops exceed 1 V. Shutting Down the NCS21xR While the NCS21xR does not provide a shutdown pin, a simple MOSFET, power switch, or logic gate can be used to switch off the power to the NCS21xR and eliminate the quiescent current. Note that the shunt input pins will always have a current flow via the input and feedback resistors (total resistance of each leg always equals slightly higher than 1 MW). Also note that when powered, the shunt input pins will exhibit the specified and well−matched typical bias current of 39 mA. The shunt input pins support the rated common mode voltage even when the NCS21xR does not have power applied. V OUT R IOUT A resistor value of 1 kW for RIOUT is always a convenient value as it provides 1 mA/V scaling. On the readout board, for simplicity, RITOV can be equal to RIOUT to provide identical voltage drops across both. It is important to take into consideration that RITOV and RIOUT add additional voltage drops in the current measurement path. The current source can provide enough compliance to www.onsemi.com 14 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 1 SCALE 2:1 DATE 11 DEC 2012 2X aaa H D D H A D 6 5 GAGE PLANE 4 1 2 L L2 E1 E DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS e B 6X b ddd TOP VIEW C A-B D M A2 DETAIL A A 6X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. ccc C A1 SIDE VIEW C SEATING PLANE END VIEW c RECOMMENDED SOLDERING FOOTPRINT* 6X DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd MILLIMETERS MIN NOM MAX −−− −−− 1.10 0.00 −−− 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 GENERIC MARKING DIAGRAM* 6 XXXMG G 6X 0.30 INCHES NOM MAX −−− 0.043 −−− 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN −−− 0.000 0.027 0.006 0.003 0.070 0.078 0.045 0.66 1 2.50 0.65 PITCH XXX = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *Date Code orientation and/or position may vary depending upon manufacturing location. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC−88/SC70−6/SOT−363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y DATE 11 DEC 2012 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 2: CANCELLED STYLE 3: CANCELLED STYLE 4: PIN 1. CATHODE 2. CATHODE 3. COLLECTOR 4. EMITTER 5. BASE 6. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 6: PIN 1. ANODE 2 2. N/C 3. CATHODE 1 4. ANODE 1 5. N/C 6. CATHODE 2 STYLE 7: PIN 1. SOURCE 2 2. DRAIN 2 3. GATE 1 4. SOURCE 1 5. DRAIN 1 6. GATE 2 STYLE 8: CANCELLED STYLE 9: PIN 1. EMITTER 2 2. EMITTER 1 3. COLLECTOR 1 4. BASE 1 5. BASE 2 6. COLLECTOR 2 STYLE 10: PIN 1. SOURCE 2 2. SOURCE 1 3. GATE 1 4. DRAIN 1 5. DRAIN 2 6. GATE 2 STYLE 11: PIN 1. CATHODE 2 2. CATHODE 2 3. ANODE 1 4. CATHODE 1 5. CATHODE 1 6. ANODE 2 STYLE 12: PIN 1. ANODE 2 2. ANODE 2 3. CATHODE 1 4. ANODE 1 5. ANODE 1 6. CATHODE 2 STYLE 13: PIN 1. ANODE 2. N/C 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 14: PIN 1. VREF 2. GND 3. GND 4. IOUT 5. VEN 6. VCC STYLE 15: PIN 1. ANODE 1 2. ANODE 2 3. ANODE 3 4. CATHODE 3 5. CATHODE 2 6. CATHODE 1 STYLE 16: PIN 1. BASE 1 2. EMITTER 2 3. COLLECTOR 2 4. BASE 2 5. EMITTER 1 6. COLLECTOR 1 STYLE 17: PIN 1. BASE 1 2. EMITTER 1 3. COLLECTOR 2 4. BASE 2 5. EMITTER 2 6. COLLECTOR 1 STYLE 18: PIN 1. VIN1 2. VCC 3. VOUT2 4. VIN2 5. GND 6. VOUT1 STYLE 19: PIN 1. I OUT 2. GND 3. GND 4. V CC 5. V EN 6. V REF STYLE 20: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR STYLE 21: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. N/C 6. CATHODE 1 STYLE 22: PIN 1. D1 (i) 2. GND 3. D2 (i) 4. D2 (c) 5. VBUS 6. D1 (c) STYLE 23: PIN 1. Vn 2. CH1 3. Vp 4. N/C 5. CH2 6. N/C STYLE 24: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE STYLE 25: PIN 1. BASE 1 2. CATHODE 3. COLLECTOR 2 4. BASE 2 5. EMITTER 6. COLLECTOR 1 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 27: PIN 1. BASE 2 2. BASE 1 3. COLLECTOR 1 4. EMITTER 1 5. EMITTER 2 6. COLLECTOR 2 STYLE 28: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN STYLE 29: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE/ANODE 6. CATHODE STYLE 30: PIN 1. SOURCE 1 2. DRAIN 2 3. DRAIN 2 4. SOURCE 2 5. GATE 1 6. DRAIN 1 Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC−88/SC70−6/SOT−363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UQFN10 1.4x1.8, 0.4P CASE 488AT−01 ISSUE A DATE 01 AUG 2007 1 SCALE 5:1 EDGE OF PACKAGE D ÉÉÉ ÉÉÉ ÉÉÉ PIN 1 REFERENCE 2X 2X A 0.10 C L1 E 0.10 C B TOP VIEW A1 0.05 C A1 C SIDE VIEW 3 9X EXPOSED Cu A 0.05 C 10X DETAIL A Bottom View (Optional) 5 ÉÉÉ ÉÉÉ SEATING PLANE DETAIL B Side View (Optional) 6 e 1 10 10 X L3 b A3 DIM A A1 A3 b D E e L L1 L3 MILLIMETERS MIN MAX 0.45 0.60 0.00 0.05 0.127 REF 0.15 0.25 1.40 BSC 1.80 BSC 0.40 BSC 0.30 0.50 0.00 0.15 0.40 0.60 GENERIC MARKING DIAGRAM* XXMG G e/2 L MOLD CMPD NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. XX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 0.10 C A B 0.05 C *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. NOTE 3 BOTTOM VIEW MOUNTING FOOTPRINT 1.700 0.0669 0.663 0.0261 0.200 0.0079 9X 0.563 0.0221 1 2.100 0.0827 0.400 0.0157 PITCH DOCUMENT NUMBER: DESCRIPTION: 10 X 0.225 0.0089 SCALE 20:1 98AON22493D mm Ǔ ǒinches Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 10 PIN UQFN, 1.4 X 1.8, 0.4P PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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