NCS213SQT2G

NCS210, NCS211, NCS212, NCS213, NCS214, NCS215 Current-Shunt Monitor, Voltage Output, Bi-Directional Zero-Drift www.onsemi.com The NCS210, NCS211, NCS212, NCS213, NCS214, and NCS215 are voltage output current shunt monitors that can measure voltage across shunts at common−mode voltages from −0.3 V to 26 V, independent of supply voltage. Six fixed gains are available: 50 V/V, 75 V/V, 100 V/V, 200 V/V, 500 V/V, or 1000 V/V. The low offset of the zero−drift architecture enables current sensing with maximum drops across the shunt as low as 10 mV full−scale. The devices can operate from a single +2.7 V to +26 V power supply, drawing a maximum of 100 mA of supply current. All versions are specified over the extended operating temperature range (–40°C to +125°C). Available in SC−70 and thin UQFN space−saving packages. PIN CONNECTIONS 1 GND 2 VS 3 • Wide Common−Mode Input Range −0.3 V to 26 V Supply Voltage Range from 2.7 V to 26 V Low Offset Voltage ±60 mV Max Low Offset Drift (0.1 mV/°C) Low Gain Error (max 1%) Rail−to−rail Input and Output Capability Low Current Consumption (typ 65 mA, 100 mA max) NCV Prefix for Automotive and Other Applications Requiring Unique Site Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant REF 8 GND 9 7 OUT 10 5 IN− 4 IN+ 1 6 5 IN− 4 IN− 2 3 IN+ *NC IN+ *NC denotes no internal connection. These pins can be left floating or connected to any voltage between Vs and GND. MARKING DIAGRAMS 6 XXMG G XXXMG G Product Gain R3−R4 R1−R2 NCS213 NCS215 50 20 kW 1 MW 75 13.3 kW 1 MW NCS214 100 10 kW 1 MW NCS210 200 5 kW 1 MW NCS211 500 2 kW 1 MW NCS212 1000 1 kW 1 MW V OUT + ǒI LOAD This document contains information on some products that are still under development. ON Semiconductor reserves the right to change or discontinue these products without notice. October, 2016 − Rev. 6 OUT 1 XXX = Specific Device Code (See page 4) M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Current Sensing (High−Side/Low−Side) Automotive Telecom Sensors © Semiconductor Components Industries, LLC, 2016 6 *NC VS Typical Applications • • • • − + REF Features • • • • • • • • 1 UQFN10 MU SUFFIX CASE 488AT SC70−6 SQ SUFFIX CASE 419B 1 R SHUNTǓGAIN ) V REF ORDERING INFORMATION See detailed ordering, marking and shipping information on page 4 of this data sheet. Publication Order Number: NCS210/D NCS210, NCS211, NCS212, NCS213, NCS214, NCS215 RSHUNT Supply Load NCS21x R1 R3 IN− − IN+ + Output OUT Reference Voltage R4 REF VS GND R2 +2.7 V to +26 V 0.01 mF To 0.1 mF Figure 1. Application Schematic Table 1. MAXIMUM RATINGS Rating Supply Voltage (Note 1) NCS21x NCV21x Analog Inputs Differential (VIN+)−(VIN−) Symbol Value Unit VS +26 +28 V VIN+,VIN− −26 to +26 V Common−Mode (Note 2) NCS21x NCV21x GND−0.3 to +26 GND−0.3 to +28 REF Input VREF GND−0.3 to ( Vs) +0.3 V Output (Note 2) VOUT GND−0.3 to ( Vs) +0.3 V 5 mA Maximum Junction Temperature TJ(max) +150 °C Storage Temperature Range TSTG −65 to +150 °C ESD Capability, Human Body Model (Note 3) HBM ±3000 V ESD Capability, Machine Model (Note 3) MM ±100 V CDM ±1000 V Input Current into Any Pin (Note 2) Charged Device Model (Note 3) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe operating parameters. 2. Input voltage at any pin may exceed the voltage shown if current at that pin is limited to 5 mA. 3. This device series incorporates ESD protection and is tested by the following methods ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115) ESD Charged Device Model tested per AEC−Q100−011. Latchup Current Maximum Rating: 50 mA per JEDEC standard: JESD78 Table 2. THERMAL CHARACTERISTICS Rating Thermal Characteristics, SC70 (Note 4) Thermal Resistance, Junction−to−Air (Note 5) Symbol Value Unit RqJA 250 °C/W 4. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe operating parameters. 5. Values based on copper area of 645 mm2 (or 1 in2) of 1 oz copper thickness and FR4 PCB substrate. Table 3. RECOMMENDED OPERATING RANGES Rating Symbol Min Max Unit Supply Voltage VS 2.7 26 V Ambient Temperature TA −40 125 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NCS210, NCS211, NCS212, NCS213, NCS214, NCS215 Table 4. ELECTRICAL CHARACTERISTICS Boldface limits apply over the specified temperature range, TA = −40°C to 125°C, guaranteed by characterization and/or design. At TA = +25°C, VSENSE = VIN+ − VIN−. NCS210, NCS213, NCS214 and NCS215: VS = +5 V, VIN+ = 12 V, and VREF = VS/2, unless otherwise noted. NCS211 and NCS212: VS = +12 V, VIN+ = 12 V, and VREF = VS/2, unless otherwise noted. Parameter Test Conditions Symbol Min Typ Max Unit GAIN NCS210 NCS211 NCS212 NCS213 NCS214 NCS215 Gain Error NCV210 Gain Error vs. Temperature NCV210 Nonlinearity Error Maximum Capacitive Load G 200 500 1000 50 100 75 V/V VSENSE = −5 mV to 5 mV Ge +0.2 +1 VSENSE = −5 mV to 5 mV Ge % +0.2 +1.5 % TA = −10°C to 125°C 7 14 ppm/°C TA = −40°C to 125°C 7 70 ppm/°C VSENSE = −5 mV to 5 mV ±0.01 % No sustained oscillation 1 nF VOLTAGE OFFSET Offset Voltage (RTI Note 6) ±0.55 ±60 mV NCS213 ±5 ±100 mV NCV210 ±0.55 ±90 mV NCS210,NCS211, NCS212, NCS214, NCS215 VSENSE = 0 mV VOS dV/dT 0.1 0.6 mV/°C NCS213 dV/dT 0.5 1.5 mV/°C NCV210 dV/dT 0.1 1.0 mV/°C 60 mA Offset Drift INPUT Input Bias Current VSENSE = 0 mV IIB VCM −0.3 VS = 5 V, VIN+ = 2 V to +26 V, VSENSE = 0 mV CMRR 103 115 dB VS = 3.3 V, VIN+ = 3 V to +26 V, VSENSE = 0 mV 103 115 dB VS = 3.3 V, VIN+ = 0 V to +26 V, VSENSE = 0 mV (TA = −10°C to 85°C) 103 120 dB 97 110 dB VS = 3.3 V, VIN+ = 3 V to +26 V, VSENSE = 0 mV 97 110 dB VS = 3.3 V, VIN+ = 0 V to +26 V, VSENSE = 0 mV (TA = −10°C to 85°C) 97 115 dB 100 115 dB 100 115 dB Common−Mode Input Voltage Range Common−Mode Rejection Ratio Common−Mode Rejection Ratio Common−Mode Rejection Ratio NCS210, NCS211, NCS212, NCS214, NCS215 NCS213 NCV210 VS = 5 V, VIN+ = 2 V to +26 V, VSENSE = 0 mV VS = 5 V, VIN+ = 2 V to +26 V, VSENSE = 0 mV CMRR CMRR VS = 3.3 V, VIN+ = 3 V to +26 V, VSENSE = 0 mV 26 V OUTPUT Output Voltage Low Referenced from GND RL = 10 kΩ to Ground VOL 5 50 mV Output Voltage High Referenced from VS RL = 10 kΩ to Ground VOH 0.05 0.2 V www.onsemi.com 3 NCS210, NCS211, NCS212, NCS213, NCS214, NCS215 Table 4. ELECTRICAL CHARACTERISTICS Boldface limits apply over the specified temperature range, TA = −40°C to 125°C, guaranteed by characterization and/or design. At TA = +25°C, VSENSE = VIN+ − VIN−. NCS210, NCS213, NCS214 and NCS215: VS = +5 V, VIN+ = 12 V, and VREF = VS/2, unless otherwise noted. NCS211 and NCS212: VS = +12 V, VIN+ = 12 V, and VREF = VS/2, unless otherwise noted. Parameter Test Conditions Symbol Min Typ Max Unit CLOAD = 10 pF, NCS210 CLOAD = 10 pF, NCS211 CLOAD = 10 pF, NCS212 CLOAD = 10 pF, NCS213 CLOAD = 10 pF, NCS214 CLOAD = 10 pF, NCS215 BW 40 25 10 100 60 50 kHz SR 0.4 V/ms en 35 nV/ǠHz DYNAMIC PERFORMANCE Bandwidth (f−3dB) Slew Rate NOISE Spectral Density, 1 kHz (RTI Note 6) POWER SUPPLY Operating Voltage Range VSENSE = 0 mV Vs 26 V Quiescent Current VSENSE = 0 mV IDD 65 100 mA 115 mA PSRR ±0.1 ±10 mV/V Quiescent Current over Temperature Power Supply Rejection Ratio 2.7 VSENSE = 0 mV VS = +2.7 V to +26 V, VIN+ =18 V, VSENSE = 0 mV 6. RTI = referenced−to−input. ORDERING INFORMATION Device Gain Marking 200 AAP NCS211SQT2G 500 AAM NCS212SQT2G (In Development)** 1000 AAN NCS213SQT2G (In Development)** 50 AAQ NCS214SQT2G (In Development)** 100 AAR NCS215SQT2G (In Development)** 75 AAT NCV210SQT2G * 200 VAP NCV211SQT2G * (In Development)** 500 VAM NCV212SQT2G * (In Development)** 1000 VAN NCV213SQT2G * (In Development)** 50 VAQ NCV214SQT2G * (In Development)** 100 VAR NCS210SQT2G NCV215SQT2G * (In Development)** 75 VAT NCS210MUTAG (In Development)** 200 TBD NCS211MUTAG (In Development)** 500 TBD NCS212MUTAG (In Development)** 1000 TBD NCS213MUTAG (In Development)** 50 TBD NCS214MUTAG (In Development)** 100 TBD NCS215MUTAG (In Development)** 75 TBD Package Shipping † SC70−6 (Pb−Free) 3000 / Tape and Reel UQFN10 (Pb−Free) 3000 / Tape and Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D *NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. ** Contact local sales office for availability. www.onsemi.com 4 NCS210, NCS211, NCS212, NCS213, NCS214, NCS215 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 2X aaa H D D H A D 6 5 GAGE PLANE 4 L L2 E1 E 1 2 DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. e B 6X ddd TOP VIEW DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd b A2 M C A-B D DETAIL A A 6X ccc C A1 SIDE VIEW C SEATING PLANE c MILLIMETERS MIN NOM MAX −−− −−− 1.10 0.00 −−− 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 END VIEW RECOMMENDED SOLDERING FOOTPRINT* 6X 6X 0.30 0.66 2.50 0.65 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5 INCHES NOM MAX −−− 0.043 −−− 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN −−− 0.000 0.027 0.006 0.003 0.070 0.078 0.045 NCS210, NCS211, NCS212, NCS213, NCS214, NCS215 PACKAGE DIMENSIONS UQFN10 1.4x1.8, 0.4P CASE 488AT ISSUE A EDGE OF PACKAGE D ÉÉ ÉÉ ÉÉ PIN 1 REFERENCE 2X 2X 0.10 C L1 E DETAIL A Bottom View (Optional) 0.10 C B TOP VIEW A1 0.05 C A1 C SIDE VIEW 3 9X EXPOSED Cu A 0.05 C 10X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A 5 SEATING PLANE ÉÉ ÉÉ DIM A A1 A3 b D E e L L1 L3 MOLD CMPD A3 DETAIL B Side View (Optional) MOUNTING FOOTPRINT 1.700 0.0669 e/2 L 0.663 0.0261 6 e 1 MILLIMETERS MIN MAX 0.45 0.60 0.00 0.05 0.127 REF 0.15 0.25 1.40 BSC 1.80 BSC 0.40 BSC 0.30 0.50 0.00 0.15 0.40 0.60 9X 0.563 0.0221 0.200 0.0079 10 10 X L3 b 1 0.10 C A B 0.05 C 2.100 0.0827 NOTE 3 BOTTOM VIEW 0.400 0.0157 PITCH 10 X 0.225 0.0089 SCALE 20:1 mm Ǔ ǒinches ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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