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NCS2200SQLT1

NCS2200SQLT1

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    VDFN6

  • 描述:

    IC COMPARATOR LV LP COMPL 6-DFN

  • 数据手册
  • 价格&库存
NCS2200SQLT1 数据手册
NCS2200, NCS2200A, NCS2202, NCS2202A Comparators, 0.85 V to 6 V, 10 mA, 1 ms, Rail-to-Rail, Open Drain and Push-Pull Outputs The NCS2200 series is an industry first sub−one volt, low power comparator family. These devices consume only 10 mA of supply current. They are guaranteed to operate at a low voltage of 0.85 V which allows them to be used in systems that require less than 1.0 V and are fully operational up to 6.0 V which makes them convenient for use in both 3.0 V and 5.0 V systems. Additional features include no output phase inversion with overdriven inputs, internal hysteresis, which allows for clean output switching, and rail−to−rail input and output performance. The NCS2200 Series is available in complementary push−pull and open drain outputs and a variety of packages. There are two industry standard pinouts for SOT−23−5 and SC70−5 packages. The NCS2200 is also available in the tiny DFN 2x2.2 package. The NCS2200A and NCS2202A are available in a UDFN 1.2x1.0 package. See package option information in Table 1 on page 2 for more information. www.onsemi.com 5 1 SOT−23−5 (TSOP−5) SN SUFFIX CASE 483 DFN 2x2.2 SQL SUFFIX CASE 488 1 6 5 1 SC70−5 SQ SUFFIX CASE 419A Features • • • • • • • • • • Operating Voltage of 0.85 V to 6.0 V Rail−to−Rail Input/Output Performance Low Supply Current of 10 mA No Phase Inversion with Overdriven Input Signals Glitchless Transitioning in or out of Tri−State Mode Complementary or Open Drain Output Configuration Internal Hysteresis Propagation Delay of 1.0 ms for NCS2200 NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant UDFN 1.2x1.0 MU SUFFIX CASE 517AA 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 13 of this data sheet. DEVICE MARKING INFORMATION Typical Applications See general marking information in the device marking section on page 14 of this data sheet. • Single Cell NiCd/NiMH Battery Powered Applications • Automotive End Products • Cellphones, Smart Phones • Alarm and Security Systems • Personal Digital Assistants © Semiconductor Components Industries, LLC, 2015 March, 2018 − Rev. 20 1 Publication Order Number: NCS2200/D NCS2200, NCS2200A, NCS2202, NCS2202A Table 1. COMPARATOR SELECTOR GUIDE Output Type Package Pinout Style Automotive Device N/A No NCS2200AMUT1G N/A Yes NCV2200AMUTBG* No NCS2200SN1T1G Yes NCV2200SN1T1G* UDFN, 1.2x1.0 1 SOT−23−5 Complementary Push−Pull 2 No NCS2200SQ2T2G NCV2200SQ2T2G* N/A No NCS2200SQLT1G 1 No NCS2202SN1T1G No NCS2202SN2T1G 2 DFN, 2x2.2 SOT−23−5 2 SC70−5 UDFN, 1.2 x 1.0 NCS2200SN2T1G NCV2200SN2T1G* Yes SC70−5 Open Drain No Yes Yes NCV2202SN2T1G* 1 No NCS2202SQ1T2G 2 No NCS2202SQ2T2G N/A No NCS2202AMUTBG *NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. PIN CONNECTIONS 1 Output 2 VCC Non−Inverting Input 5 + - 3 4 Output 1 VEE Non−Inverting Input 2 VEE Inverting Input 3 5 VCC 4 Inverting Input + - Style 2 Pinout (SN2T1, SQ2T2) Style 1 Pinout (SN1T1) Figure 1. SOT−23−5 (NCS2200, NCS2202), SC70−5 (NCS2200, NCS2202) VEE 1 6 VOUT VEE 1 6 VOUT VCC 2 5 NC NC 2 5 VCC IN− 3 4 IN+ IN− 3 4 IN+ Top View Top View Figure 2. DFN 2x2.2 (NCS2200) Figure 3. UDFN 1.2x1.0 (NCS2200A/NCS2202A) www.onsemi.com 2 NCS2200, NCS2200A, NCS2202, NCS2202A MAXIMUM RATINGS Symbol Value Unit Supply Voltage Range (VCC to VEE) Rating VS 6.0 V Non−inverting/Inverting Input to VEE VCM −0.2 to (VCC + 0.2) V Operating Junction Temperature TJ 150 °C Operating Ambient Temperature Range NCS2200, NCS2202, NCS2200A, NCS2202A NCV2200, NCV2202, NCV2200A TA Storage Temperature Range Tstg −65 to +150 °C tS Indefinite s Output Short Circuit Duration Time (Note 1) ESD Tolerance (Note 2) NCS2200 Human Body Model Machine Model NCS2202 Human Body Model Machine Model NCS2200A Human Body Model Machine Model NCS2202A Human Body Model − all pins except output Human Body Model − output pin Machine Model °C −40 to +105 −40 to +125 ESD Thermal Resistance, Junction−to−Ambient TSOP−5 DFN (Note 3) SC70−5 UDFN V HBM MM 2000 200 HBM MM 2000 200 HBM MM 1900 200 HBM HBM MM 1500 500 150 RqJA °C/W 238 215 283 350 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The maximum package power dissipation limit must not be exceeded. TJ(max) * TA PD + RqJA 2. ESD data available upon request. 3. For more information, refer to application note, AND8080/D. www.onsemi.com 3 NCS2200, NCS2200A, NCS2202, NCS2202A NCS2200 ELECTRICAL CHARACTERISTICS (For all values VCC = 0.85 V to 6.0 V, VEE = 0 V, TA = 25°C, unless otherwise noted.) (Note 4) Symbol VHYS VIO Parameter Conditions Min Typ Max Unit mV Input Hysteresis TA = 25°C 2.0 8.0 20 Input Offset Voltage VCC = 0.85 V TA = 25°C TA = TLow to THigh (Note 5) −10 −12 0.5 − +10 +12 VCC = 3.0 V TA = 25°C TA = TLow to THigh −6.0 −8.0 0.5 − +6.0 +8.0 VCC = 6.0 V TA = 25°C TA = TLow to THigh −5.0 −7.0 0.5 − +5.0 +7.0 − VEE to VCC − VCM Common Mode Voltage Range ILEAK mV V Output Leakage Current VCC = 6.0 V − 3.3 − nA ISC Output Short−Circuit Sourcing or Sinking Vout = GND − 70 − mA CMRR Common Mode Rejection Ratio VCM = VCC 53 65 − dB − 1.0 − pA dB IIB PSRR ICC VOH VOL Input Bias Current Power Supply Rejection Ratio DVS = 2.575 V 45 55 − Supply Current VCC = 0.85 V TA = 25°C TA = TLow to THigh (Note 5) − 10 − 15 17 VCC = 3.0 V TA = 25°C TA = TLow to THigh − 10 − 15 17 VCC = 6.0 V TA = 25°C TA = TLow to THigh − 10 − 15 17 VCC = 0.85 V, Isource = 0.5 mA TA = 25°C TA = TLow to THigh (Note 5) VCC − 0.2 VCC − 0.225 VCC − 0.10 − − VCC = 3.0 V, Isource = 3.0 mA TA = 25°C TA = TLow to THigh VCC − 0.2 VCC − 0.25 VCC − 0.12 − − VCC = 6.0 V, Isource = 5.0 mA TA = 25°C TA = TLow to THigh VCC − 0.2 VCC − 0.25 VCC − 0.12 − − VCC = 0.85 V, Isink = 0.5 mA TA = 25°C TA = TLow to THigh (Note 5) − VEE + 0.10 − VEE + 0.2 VEE + 0.225 VCC = 3.0 V, Isink = 3.0 mA TA = 25°C TA = TLow to THigh − VEE + 0.12 − VEE + 0.2 VEE + 0.25 VCC = 6.0 V, Isink = 5.0 mA TA = 25°C TA = TLow to THigh − VEE + 0.12 − VEE + 0.2 VEE + 0.25 Output Voltage High Output Voltage Low mA V V tPHL Propagation Delay, High−to−Low 20 mV Overdrive, CL = 15 pF − 1080 − ns tPLH Propagation Delay, Low−to−High 20 mV Overdrive, CL = 15 pF − 900 − ns tFALL Output Fall Time VCC = 6.0 V, CL = 50 pF − 13 − ns tRISE Output Rise Time VCC = 6.0 V, CL = 50 pF − 8.0 − ns − 35 − ms tPU Powerup Time Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The limits over the extended temperature range are guaranteed by design only. 5. NCS2200: TLow = −40°C, THigh = +105°C; NCV2200: TLow = −40°C, THigh = +125°C www.onsemi.com 4 NCS2200, NCS2200A, NCS2202, NCS2202A NCS2202 ELECTRICAL CHARACTERISTICS (For all values VCC = 0.85 V to 6.0 V, VEE = 0 V, TA = 25°C, Rpullup = 10 kW, unless otherwise noted.) (Note 6) Symbol VHYS VIO Parameter Conditions Min Typ Max Unit mV Input Hysteresis TA = 25°C 2.0 8.0 20 Input Offset Voltage VCC = 0.85 V TA = 25°C TA = TLow to THigh (Note 7) −10 −12 0.5 − +10 +12 VCC = 3.0 V TA = 25°C TA = TLow to THigh −6.0 −8.0 0.5 − +6.0 +8.0 VCC = 6.0 V TA = 25°C TA = TLow to THigh −5.0 −7.0 0.5 − +5.0 +7.0 − VEE to VCC − VCM Common Mode Voltage Range ILEAK mV V Output Leakage Current VCC = 6.0 V − 3.3 − nA ISC Output Short−Circuit Sourcing or Sinking Vout = GND − 70 − mA CMRR Common Mode Rejection Ratio VCM = VCC 53 65 − dB − 1.0 − pA dB IIB PSRR ICC VOL Input Bias Current Power Supply Rejection Ratio DVS = 2.575 V 45 55 − Supply Current VCC = 0.85 V TA = 25°C TA = TLow to THigh (Note 7) − 10 − 15 17 VCC = 3.0 V TA = 25°C TA = TLow to THigh − 10 − 15 17 VCC = 6.0 V TA = 25°C TA = TLow to THigh − 10 − 15 17 VCC = 0.85 V, Isink = 0.5 mA TA = 25°C TA = TLow to THigh (Note 7) − VEE + 0.10 − VEE + 0.2 VEE + 0.225 VCC = 3.0 V, Isink = 3.0 mA TA = 25°C TA = TLow to THigh − VEE + 0.12 − VEE + 0.2 VEE + 0.25 VCC = 6.0 V, Isink = 5.0 mA TA = 25°C TA = TLow to THigh − VEE + 0.12 − VEE + 0.2 VEE + 0.25 Output Voltage Low mA V tPHL Propagation Delay, High−to−Low 20 mV Overdrive, CL = 15 pF − 1000 − ns tPLH Propagation Delay, Low−to−High 20 mV Overdrive, CL = 15 pF − 800 − ns tFALL Output Fall Time VCC = 6.0 V, CL = 50 pF − 6.0 − ns tRISE Output Rise Time VCC = 6.0 V, CL = 50 pF − 260 − ns − 35 − ms tPU Powerup Time Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. The limits over the extended temperature range are guaranteed by design only. 7. NCS2202: TLow = −40°C, THigh = +105°C; NCV2202: TLow = −40°C, THigh = +125°C www.onsemi.com 5 NCS2200, NCS2200A, NCS2202, NCS2202A NCS2200A ELECTRICAL CHARACTERISTICS (For all values VCC = 0.85 V to 6.0 V, VEE = 0 V, TA = 25°C, unless otherwise noted.) (Note 8) Symbol VHYS VIO Parameter Input Hysteresis Input Offset Voltage VCM ISC Common Mode Voltage Range Output Short−Circuit Sourcing or Sinking CMRR IIB PSRR Common Mode Rejection Ratio Input Bias Current Power Supply Rejection Ratio ICC VOH VOL tPHL tPLH tFALL tRISE Supply Current Output Voltage High Output Voltage Low Propagation Delay, High−to−Low Propagation Delay, Low−to−High Output Fall Time Output Rise Time Conditions TA = 25°C VCC = 0.85 V TA = 25°C TA = TLOW to THIGH VCC = 3.0 V TA = 25°C TA = TLOW to THIGH VCC = 6.0 V TA = 25°C TA = TLOW to THIGH Vout = GND VCM = VCC DVS = 2.575 V VCC = 0.85 V TA = 25°C TA = TLOW to THIGH VCC = 3.0 V TA = 25°C TA = TLOW to THIGH VCC = 6.0 V TA = 25°C TA = TLOW to THIGH VCC = 0.85 V, Isource = 0.5 mA TA = 25°C TA = TLOW to THIGH VCC = 3.0 V, Isource = 3.0 mA TA = 25°C TA = TLOW to THIGH VCC = 6.0 V, Isource = 5.0 mA TA = 25°C TA = TLOW to THIGH VCC = 0.85 V, Isink = 0.5 mA TA = 25°C TA = TLOW to THIGH VCC = 3.0 V, Isink = 3.0 mA TA = 25°C TA = TLOW to THIGH VCC = 6.0 V, Isink = 5.0 mA TA = 25°C TA = TLOW to THIGH 20 mV Overdrive, CL = 15 pF, VCC = 2.85 V VCC = 6.0 V, CL = 50 pF (Note 9) VCC = 6.0 V, CL = 50 pF (Note 9) Min Typ Max Unit 2.0 4.5 20 mV −10 −12 0.5 − +10 +12 −6.0 −8.0 0.5 − +6.0 +8.0 −5.0 −7.0 − − 0.5 − VEE to VCC 60 +5.0 +7.0 − − V mA 53 − 45 70 1.0 80 − − − dB pA dB − 7.5 − 15 17 − 8.0 − 15 17 − 9.0 − 15 17 VCC − 0.25 VCC − 0.275 VCC − 0.10 − − VCC − 0.3 VCC − 0.35 VCC − 0.12 − − VCC − 0.3 VCC − 0.35 VCC − 0.12 − − − VEE + 0.10 − VEE + 0.25 VEE + 0.275 − VEE + 0.12 − VEE + 0.3 VEE + 0.35 − VEE + 0.12 − 625 750 22 20 VEE + 0.3 VEE + 0.35 − − − − mV mA V V − − − − ns ns ns ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 8. The limits over the extended temperature range are guaranteed by design only. 9. Input signal: 1 kHz, squarewave signal with 10 ns edge rate. 10. NCS2200A: TLOW = −40°C, THIGH = +105°C; NCV2200A: TLOW = −40°C, THIGH = +125°C. www.onsemi.com 6 NCS2200, NCS2200A, NCS2202, NCS2202A NCS2202A ELECTRICAL CHARACTERISTICS (For all values VCC = 0.85 V to 6.0 V, VEE = 0 V, TA = 25°C, Rpullup = 10 kW, unless otherwise noted.) (Note 11) Symbol VHYS VIO Parameter Input Hysteresis Input Offset Voltage VCM ISC Common Mode Voltage Range Output Short−Circuit Sourcing or Sinking CMRR IIB PSRR Common Mode Rejection Ratio Input Bias Current Power Supply Rejection Ratio ICC VOL tPHL tPLH Supply Current Output Voltage Low Propagation Delay − High to Low Propagation Delay − Low to High Conditions Min Typ Max Unit TA = 25°C VCC = 0.85 V TA = 25°C TA = −40°C to 105°C VCC = 3.0 V TA = 25°C TA = −40°C to 105°C VCC = 6.0 V TA = 25°C TA = −40°C to 105°C 2.0 4.5 20 mV −10 −12 0.3 − +10 +12 −6.0 −8.0 0.4 − +6.0 +8.0 −5.0 −7.0 − − 0.4 − VEE to VCC 60 +5.0 +7.0 − − V mA 53 − 45 80 1.0 80 − − − dB pA dB − 7.5 − 15 17 − 8.0 − 15 17 − 9.0 − 15 17 − VEE + 0.14 − VEE + 0.25 VEE + 0.275 − VEE + 0.18 − VEE + 0.3 VEE + 0.35 − − VEE + 0.20 − 580 VEE + 0.3 VEE + 0.35 − 50 mV Overdrive, CL = 15 pF, VCC = 2.85 V − 350 − 100 mV Overdrive, CL = 15 pF, VCC = 2.85 V − 220 − 20 mV Overdrive, CL = 15 pF, VCC = 2.85 V − 550 − 50 mV Overdrive, CL = 15 pF, VCC = 2.85 V − 400 − 100 mV Overdrive, CL = 15 pF, VCC = 2.85 V − 340 − Vout = GND VCM = VCC DVS = 2.575 V VCC = 0.85 V TA = 25°C TA = −40°C to 105°C VCC = 3.0 V TA = 25°C TA = −40°C to 105°C VCC = 6.0 V TA = 25°C TA = −40°C to 105°C VCC = 0.85 V, Isink = 0.5 mA TA = 25°C TA = −40°C to 105°C VCC = 3.0 V, Isink = 3.0 mA TA = 25°C TA = −40°C to 105°C VCC = 6.0 V, Isink = 5.0 mA TA = 25°C TA = −40°C to 105°C 20 mV Overdrive, CL = 15 pF, VCC = 2.85 V mV mA V ns ns tFALL Output Fall Time VCC = 6.0 V, CL = 50 pF (Note 12) − 5.0 − ns tRISE Output Rise Time VCC = 6.0 V, CL = 50 pF (Note 12) − 235 − ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 11. The limits over the extended temperature range are guaranteed by design only. 12. Input signal: 1 kHz, squarewave signal with 10 ns edge rate. www.onsemi.com 7 NCS2200, NCS2200A, NCS2202, NCS2202A 1000 TA = 25°C VCC = 5.0 V ICC, SUPPLY CURRENT (mA) ICC, SUPPLY CURRENT (mA) 12 11 10 9.0 8.0 7.0 6.0 −50 0 −25 25 50 75 VCC = 2.7 V 0.1 10 1.0 100 TA, AMBIENT TEMPERATURE (°C) FREQUENCY (kHz) Figure 1. NCS2200 Series Supply Current versus Temperature Figure 2. NCS2200 Series Supply Current versus Output Transition Frequency 300 1000 VCC − VOH, OUTPUT VOLTAGE HIGH STATE (mV) ICC, SUPPLY CURRENT (mA) VCC = 5.0 V 10 1.0 0.01 100 12 10 8.0 6.0 4.0 TA = 85°C TA = 25°C 2.0 TA = −40°C 0 2.0 1.0 3.0 4.0 5.0 100 10 1.0 0.1 1.0 10 VCC, SUPPLY VOLTAGE (V) Isource, OUTPUT SOURCE CURRENT (mA) Figure 3. NCS2200 Series Supply Current versus Supply Voltage Figure 4. NCS2200 Output Voltage High State versus Output Source Current 1000 VCC = 5.0 V TA = 25°C 100 10 1.0 0.1 0.01 VCC = 5.0 V TA = 25°C 0.1 0.01 6.0 VOL, OUTPUT VOLTAGE LOW STATE (mV) 0 VOL, OUTPUT VOLTAGE LOW STATE (mV) 100 0.1 1.0 10 160 140 VCC = 5.0 V ILOAD = 4.0 mA 120 100 80 60 40 20 0 −100 −50 0 50 100 Isink, OUTPUT SINK CURRENT, (mA) TA, AMBIENT TEMPERATURE (°C) Figure 5. NCS2200 Series Output Voltage Low State versus Output Sink Current Figure 6. NCS2200 Series Output Voltage Low State versus Temperature www.onsemi.com 8 150 1.0 4.95 VCC = 5.0 V ILOAD = 4.0 mA 4.94 PROPAGATION DELAY (ms) VOH, OUTPUT VOLTAGE HIGH STATE (mV) NCS2200, NCS2200A, NCS2202, NCS2202A 4.93 4.92 4.91 4.90 4.89 4.88 −100 −50 0 50 100 0.8 tPLH 0.6 tPHL 0.4 0.2 VCC = 5.0 V Input Overdrive = 50 mV 0 −50 150 Figure 7. NCS2200 Series Output Voltage High State versus Temperature 25 50 75 600 tLH 500 400 tHL 300 200 TA = 25°C Input Overdrive = 100 mV 100 VCC = 2.7 V TA = 25°C 1.0 0.8 0.6 tPLH 0.4 tPHL 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 0 50 VCC, SUPPLY VOLTAGE (V) 100 150 Figure 10. NCS2200 Series Propagation Delay versus Input Overdrive 0.8 VCC = 5.0 V TA = 25°C 0.7 tPLH 0.6 VCC 2 V/Div 0.5 0.4 0.3 tPHL Output 0.2 0.1 Input Overdrive = 50 mV 0 0 50 100 200 INPUT OVERDRIVE (mV) Figure 9. NCS2200 Series Output Response Time versus Supply Voltage PROPAGATION DELAY (ms) 100 1.2 PROPAGATION DELAY (ms) OUTPUT RESPONSE TIME (ns) 0 Figure 8. NCS2200 Series Propagation Delay versus Temperature 700 0 −25 TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) 150 200 INPUT OVERDRIVE (mV) 10 ms/Div Figure 12. NCS2200 Series Powerup Delay Figure 11. NCS2200 Series Propagation Delay versus Input Overdrive www.onsemi.com 9 3.0 TA = 25°C 2.0 1.0 0 −1.0 −2.0 −3.0 1.0 2.0 3.0 5.0 4.0 6.0 ILEAK, OUTPUT LEAKAGE CURRENT (nA) VCM, INPUT COMMON MODE VOLTAGE RANGE (V) NCS2200, NCS2200A, NCS2202, NCS2202A 180 160 140 120 100 TA = 85°C 80 60 40 TA = 25°C 20 TA = −40°C 0 0 1.0 2.0 VS, SUPPLY VOLTAGE (V) 3.0 Figure 13. NCS2200 Series Input Common Mode Voltage Range versus Supply Voltage INPUT BIAS CURRENT (pA) 3500 2500 1500 500 −500 −20 5.0 6.0 7.0 Figure 14. NCS2202 Output Leakage Current versus Output Voltage 4500 −40 4.0 VOUT, OUTPUT VOLTAGE (V) 0 20 40 60 80 100 TEMPERATURE (°C) Figure 15. Input Bias Current versus Temperature www.onsemi.com 10 120 8.0 NCS2200, NCS2200A, NCS2202, NCS2202A OPERATING DESCRIPTION The NCS2200 series is an industry first sub−one volt, low power comparator family. This series is designed for rail−to−rail input and output performance. These devices consume only 10 mA of supply current while achieving a typical propagation delay of 1.1 ms at a 20 mV input overdrive. Figures 10 and 11 show propagation delay with various input overdrives. This comparator family is guaranteed to operate at a low voltage of 0.85 V up to 6.0 V. This is accomplished by the use of a modified analog CMOS process that implements depletion MOSFET devices. The common−mode input voltage range extends 0.1 V beyond the upper and lower rail without phase inversion or other adverse effects. This series is available in the SOT−23−5 package. Additionally, the NCS2200 device is available in the tiny DFN 2x2.2 package and the SC70−5 package. NCS2200A is available in UDFN package. Output Stage The NCS2200 has a complementary P and N Channel output stage that has capability of driving a rail−to−rail output swing with a load ranging up to 5.0 mA. It is designed such that shoot−through current is minimized while switching. This feature eliminates the need for bypass capacitors under most circumstances. The NCS2202 has an open drain N−channel output stage that can be pulled up to 6.0 V (max) with an external resistor. This facilitates mixed voltage system applications. VCC VCC IN (+) IN (+) Output Output IN (−) IN (−) VEE VEE Figure 16. NCS2200/NCS2200A Complementary Push−Pull Output Configuration Figure 17. NCS2202/NCS2202A Open Drain Output Configuration VCC Rx Cx IN (−) NCS 2200 IN (+) VO OUT R2 R1 The oscillation frequency can be programmed as follows: 1 f+1+ T 2.2 RxCx Figure 18. Schmitt Trigger Oscillator www.onsemi.com 11 NCS2200, NCS2200A, NCS2202, NCS2202A VCC 1 MW R1 100 pF t0 R2 1 MW IN (−) NCS 2200 IN (+) VCC VO OUT t0 C1 R3 The resistor divider R1 and R2 can be used to set the magnitude of the input pulse. The pulse width is set by adjusting C1 and R3. Figure 19. One−Shot Multivibrator +5 V +3 V 100 kW R pullup IN (−) NCS 2202 IN (+) 100 kW +3 V Logic Output OUT +5 V Logic Input This circuit converts 5 V logic to 3 V logic. Using the NCS2202/A allows for full 5 V logic swing without creating overvoltage on the 3 V logic input. Figure 20. Logic Level Translator VCC IN (−) NCS 2200 IN (+) OUT 100 mV Figure 21. Zero−Crossing Detector www.onsemi.com 12 t1 0 NCS2200, NCS2200A, NCS2202, NCS2202A ORDERING INFORMATION Pinout Style Output Type Package Shipping† NCS2200AMUT1G N/A Complementary Push−Pull UDFN (Pb−Free) 3000 / Tape & Reel NCV2200AMUTBG* N/A Complementary Push−Pull UDFN (Pb−Free) 3000 / Tape & Reel NCS2200SN1T1G 1 Complementary Push−Pull SOT−23−5 (TSOP−5) (Pb−Free) 3000 / Tape & Reel NCV2200SN1T1G* 1 Complementary Push−Pull SOT−23−5 (TSOP−5) (Pb−Free) 3000 / Tape & Reel NCS2200SN2T1G 2 Complementary Push−Pull SOT−23−5 (TSOP−5) (Pb−Free) 3000 / Tape & Reel NCV2200SN2T1G* 2 Complementary Push−Pull SOT−23−5 (TSOP−5) (Pb−Free) 3000 / Tape & Reel NCS2200SQ2T2G 2 Complementary Push−Pull SC70−5 (Pb−Free) 3000 / Tape & Reel NCV2200SQ2T2G* 2 Complementary Push−Pull SC70−5 (Pb−Free) 3000 / Tape & Reel NCS2200SQLT1G N/A Complementary Push−Pull DFN, 2x2.2 (Pb−Free) 3000 / Tape & Reel NCS2202SN1T1G 1 Open Drain SOT−23−5 (TSOP−5) (Pb−Free) 3000 / Tape & Reel NCS2202SN2T1G 2 Open Drain SOT−23−5 (TSOP−5) (Pb−Free) 3000 / Tape & Reel NCV2202SN2T1G* 2 Open Drain SOT−23−5 (TSOP−5) (Pb−Free) 3000 / Tape & Reel NCS2202SQ1T2G 1 Open Drain SC70−5 (Pb−Free) 3000 / Tape & Reel NCS2202SQ2T2G 2 Open Drain SC70−5 (Pb−Free) 3000 / Tape & Reel NCS2202AMUTBG N/A Open Drain UDFN (Pb−Free) 3000 / Tape & Reel Device This device contains 93 active transistors. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. www.onsemi.com 13 NCS2200, NCS2200A, NCS2202, NCS2202A MARKING DIAGRAMS SOT−23−5 (TSOP−5) SN SUFFIX CASE 483 SC70−5 SQ SUFFIX CASE 419A 5 5 CBx MG G CAx AYWG G 1 1 x = I for NCS2200SN1T1 J for NCS2200SN2T1 M for NCS2202SN1T1 N for NCS2202SN2T1 A = Assembly Location Y = Year W = Work Week G = Pb−Free Package CBx x = Specific Device Code = A for NCS2200SQ2T2 D for NCS2202SQ1T2G E for NCS2202SQ2T2G M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation, position, and underbar may vary depending upon manufacturing location. (Note: Microdot may be in either location) DFN6 2x2.2 SQL SUFFIX CASE 488 UDFN6 1.2x1.0 MU SUFFIX CASE 517AA 1 CB MG G 1 xM G (Top View) x CB = Specific Device Code M = Date Code* G = Pb−Free Package M G (Note: Microdot may be in either location) *Date Code overbar and underbar may vary depending upon manufacturing location. www.onsemi.com 14 S for Specific Device Code V for NCS2202A (V with 180° Rotation) = Date Code = Pb−Free Package MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE L SCALE 2:1 A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DATE 17 JAN 2013 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) B M M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J GENERIC MARKING DIAGRAM* C K H XXXMG G SOLDER FOOTPRINT 0.50 0.0197 XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. mm Ǔ ǒinches STYLE 1: PIN 1. BASE 2. EMITTER 3. BASE 4. COLLECTOR 5. COLLECTOR STYLE 2: PIN 1. ANODE 2. EMITTER 3. BASE 4. COLLECTOR 5. CATHODE STYLE 3: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. CATHODE 1 STYLE 4: PIN 1. SOURCE 1 2. DRAIN 1/2 3. SOURCE 1 4. GATE 1 5. GATE 2 STYLE 6: PIN 1. EMITTER 2 2. BASE 2 3. EMITTER 1 4. COLLECTOR 5. COLLECTOR 2/BASE 1 STYLE 7: PIN 1. BASE 2. EMITTER 3. BASE 4. COLLECTOR 5. COLLECTOR STYLE 8: PIN 1. CATHODE 2. COLLECTOR 3. N/C 4. BASE 5. EMITTER STYLE 9: PIN 1. ANODE 2. CATHODE 3. ANODE 4. ANODE 5. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42984B STYLE 5: PIN 1. CATHODE 2. COMMON ANODE 3. CATHODE 2 4. CATHODE 3 5. CATHODE 4 Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. SC−88A (SC−70−5/SOT−353) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOP−5 CASE 483 ISSUE N 5 1 SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. D 5X NOTE 5 2X DATE 12 AUG 2020 0.20 C A B 0.10 T M 2X 0.20 T 5 B 1 4 2 B S 3 K DETAIL Z G A A TOP VIEW DIM A B C D G H J K M S DETAIL Z J C 0.05 H C SIDE VIEW SEATING PLANE END VIEW GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 0.95 0.037 MILLIMETERS MIN MAX 2.85 3.15 1.35 1.65 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 1.9 0.074 5 5 XXXAYWG G 1 1 Analog 2.4 0.094 XXX = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package 1.0 0.039 XXX MG G Discrete/Logic XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ARB18753C TSOP−5 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN6 2x2.2 mm CASE 488−03 ISSUE G DATE 06 FEB 2006 SCALE 4:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. TERMINAL b MAY HAVE MOLD COMPOUND MATERIAL ALONG SIDE EDGE. 6. DETAILS A AND B SHOW OPTIONAL VIEWS FOR END OF TERMINAL LEAD AT EDGE OF PACKAGE AND SIDE EDGE OF PACKAGE. B A ÍÍÍ ÍÍÍ ÍÍÍ E PIN ONE REFERENCE 0.10 C 2X DIM A A1 A3 b b1 D D2 E e L L1 TOP VIEW 2X 0.10 C A3 DETAIL B 0.10 C A 6X 0.08 C A1 SIDE VIEW 0.10 C A 0.05 C C B b1 0.20 0.30 0.40 0.30 0.00 MILLIMETERS NOM MAX 0.90 1.00 0.03 0.05 0.20 REF 0.25 0.30 0.35 0.40 2.00 BSC 0.50 0.60 2.20 BSC 0.65 BSC 0.35 0.40 0.05 0.10 GENERIC MARKING DIAGRAM* e 3 1 NOTE 3 SEATING PLANE MIN 0.80 0.00 xxM DETAIL A D2 xx M 4 6 6X L b *This information is generic. Please refer to device data sheet for actual part marking. 5X 0.10 C A 0.05 C BOTTOM VIEW EDGE OF PACKAGE MOLD CMPD L1 A1 DETAIL A Bottom View (Optional) ÉÉ ÉÉ = Specific Device Code = Date Code B SOLDERING FOOTPRINT* NOTE 3 0.50 0.020 EXPOSED Cu DETAIL B Side View (Optional) A3 0.65 0.025 0.40 0.016 0.50 0.020 1.9 0.075 0.65 0.025 SCALE 10:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON04199D DFN6 2 X 2.2 X 0.9 X 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN6, 1.2x1.0, 0.4P CASE 517AA−01 ISSUE D 1 SCALE 8:1 EDGE OF PACKAGE 2X 0.10 C ÉÉ ÉÉ ÉÉ L1 E DETAIL A Bottom View (Optional) TOP VIEW 2X EXPOSED Cu 0.10 C (A3) 0.10 C A1 A 10X 0.08 C ÉÉÉ ÉÉÉ A3 DETAIL B Side View (Optional) 5X XM L 3 X M L2 b 0.10 C A B 0.05 C 6 = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 4 e NOTE 3 MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.127 REF 0.15 0.25 1.20 BSC 1.00 BSC 0.40 BSC 0.30 0.40 0.00 0.15 0.40 0.50 GENERIC MARKING DIAGRAM* C A1 6X DIM A A1 A3 b D E e L L1 L2 MOLD CMPD SEATING PLANE SIDE VIEW 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B D PIN ONE REFERENCE DATE 03 SEP 2010 MOUNTING FOOTPRINT* BOTTOM VIEW 6X 6X 0.42 0.40 PITCH 0.22 1.07 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON22068D 6 PIN UDFN, 1.2X1.0, 0.4P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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