NCS2535DTR2G

NCS2535 Product Preview Triple 1.0 GHz Current Feedback Op Amp with Enable Feature NCS2535 is a triple 1.0 GHz current feedback monolithic operational amplifier featuring high slew rate and low differential gain and phase error. The current feedback architecture allows for a superior bandwidth and low power consumption. This device features an enable pin. Features http://onsemi.com MARKING DIAGRAM • • • • • • • • • • • • 16 −3.0 dB Small Signal BW (AV = +2.0, VO = 0.5 Vp−p) 1.0 GHz Typ Slew Rate 1500 V/ms Supply Current 8.5 mA Input Referred Voltage Noise 6.0 nV/ Hz THD −60 dBc (f = 5.0 MHz, VO = 2.0 Vp−p) Output Current 150 mA Enable Pin Available These are Pb−Free Devices* High Resolution Video Line Driver High−Speed Instrumentation Wide Dynamic Range IF Amp 3 2 Gain = +2 VS = ±5V RF = 400W RL = 150W TSSOP−16 DT SUFFIX CASE 948F 1 2535 A L Y W NCS 2535 ALYW = NCS2535 = Assembly Location = Wafer Lot = Year = Work Week Applications −IN1 +IN1 VEE1 −IN2 +IN2 VEE2 −IN3 +IN3 TSSOP−16 PINOUT 1 2 3 4 5 6 7 8 − + (Top View) VOUT = 2.0V − + − + 16 15 14 13 12 11 10 9 EN1 OUT1 VCC1 EN2 OUT2 VCC2 OUT3 EN3 NORMAILIZED GAIN(dB) 1 0 −1 −2 −3 ORDERING INFORMATION VOUT = 1.0V Device VOUT = 0.5V 0.1 10 100 1 FREQUENCY (MHz) 1000 10k NCS2535DTG NCS2535DTR2G Package TSSOP−16 Shipping † 96 Units/Rail −4 −5 −6 0.01 TSSOP−16 2500 Tape & Reel Figure 1. Frequency Response: Gain (dB) vs. Frequency Av = +2.0 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. © Semiconductor Components Industries, LLC, 2005 1 July, 2005 − Rev. P0 Publication Order Number: NCS2535/D NCS2535 PIN FUNCTION DESCRIPTION Pin 9, 12, 15 Symbol OUTx Function Output Equivalent Circuit VCC ESD OUT VEE 3, 6 2, 5, 8 VEE +INx Negative Power Supply Non−inverted Input ESD +IN VCC ESD −IN VEE 1, 4, 7 11, 14 10, 13, 16 −INx VCC EN Inverted Input Positive Power Supply Enable EN See Above VCC ESD VEE ENABLE PIN TRUTH TABLE High Enable *Default open state VCC Low* Enabled Disabled +IN −IN OUT CC VEE Figure 2. Simplified Device Schematic http://onsemi.com 2 NCS2535 ATTRIBUTES Characteristics ESD Human Body Model Machine Model Charged Device Model Moisture Sensitivity (Note 2) Flammability Rating Oxygen Index: 28 to 34 Value 2.0 kV (Note 1) 200 V 1.0 kV Level 1 UL 94 V−0 @ 0.125 in 1. 0.8 kV between the input pairs +IN and −IN pins only. All other pins are 2.0 kV. 2. For additional information, see Application Note AND8003/D. MAXIMUM RATINGS Parameter Power Supply Voltage Input Voltage Range Input Differential Voltage Range Output Current Maximum Junction Temperature (Note 3) Operating Ambient Temperature Storage Temperature Range Power Dissipation Thermal Resistance, Junction−to−Air Symbol VS VI VID IO TJ TA Tstg PD RqJA Rating 11 vV S vV S 100 150 −40 to +85 −60 to +150 (See Graph) 156 Unit Vdc Vdc Vdc mA °C °C °C mW °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded. MAXIMUM POWER DISSIPATION 1800 Maximum Power Dissapation (mW) 1600 1400 1200 The maximum power that can be safely dissipated is limited by the associated rise in junction temperature. For the plastic packages, the maximum safe junction temperature is 150°C. If the maximum is exceeded momentarily, proper circuit operation will be restored as soon as the die temperature is reduced. Leaving the device in the “overheated’’ condition for an extended period can result in device damage. To ensure proper operation, it is important to observe the derating curves. 1000 800 600 400 200 0 −50 −25 0 25 50 75 100 Ambient Temperature (C) 125 150 Figure 3. Power Dissipation vs. Temperature http://onsemi.com 3 NCS2535 AC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 400 W, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit FREQUENCY DOMAIN PERFORMANCE BW Bandwidth 3.0 dB Small Signal 3.0 dB Large Signal 0.1 dB Gain Flatness Bandwidth Differential Gain Differential Phase MHz AV = +2.0, VO = 0.5 Vp−p AV = +2.0, VO = 2.0 Vp−p AV = +2.0 AV = +2.0, RL = 150 W, f = 3.58 MHz AV = +2.0, RL = 150 W, f = 3.58 MHz 1000 450 120 0.01 0.01 MHz % ° GF0.1dB dG dP TIME DOMAIN RESPONSE SR ts Slew Rate Settling Time 0.01% 0.1% Rise and Fall Time Turn−on Time Turn−off Time AV = +2.0, Vstep = 2.0 V AV = +2.0, Vstep = 2.0 V AV = +2.0, Vstep = 2.0 V (10%−90%) AV = +2.0, Vstep = 2.0 V 1500 9.0 7.0 1.5 55 55 ns ns ns V/ms ns tr tf tON tOFF HARMONIC/NOISE PERFORMANCE THD HD2 HD3 IP3 SFDR eN iN Total Harmonic Distortion 2nd Harmonic Distortion 3rd Harmonic Distortion Third−Order Intercept Spurious−Free Dynamic Range Input Referred Voltage Noise Input Referred Current Noise f = 5.0 MHz, VO = 2.0 Vp−p f = 5.0 MHz, VO = 2.0 Vp−p f = 5.0 MHz, VO = 2.0 Vp−p f = 10 MHz, VO = 1.0 Vp−p f = 5.0 MHz, VO = 2.0 Vp−p f = 1.0 MHz f = 1.0 MHz, Inverting f = 1.0 MHz, Non−Inverting −60 −62 −66 34 55 6.0 10 3.0 dBc dBc dBc dBm dBc nV pA Hz Hz http://onsemi.com 4 NCS2535 DC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit DC PERFORMANCE VIO DVIO/DT IIB DIIB/DT VIH VIL Input Offset Voltage Input Offset Voltage Temperature Coefficient Input Bias Current Input Bias Current Temperature Coefficient Input High Voltage (Enable) (Note 4) Input Low Voltage (Enable) (Note 4) +Input (Non−Inverting), VO = 0 V −Input (Inverting), VO = 0 V (Note 4) +Input (Non−Inverting), VO = 0 V −Input (Inverting), VO = 0 V 2.5 −2.5 0 6.0 "3.0 "6.0 +40 −10 "5.0 mV mV/°C mA nA/°C V V INPUT CHARACTERISTICS VCM CMRR RIN CIN Input Common Mode Voltage Range Common Mode Rejection Ratio Input Resistance Differential Input Capacitance (See Graph) +Input (Non−Inverting) −Input (Inverting) "3.0 55 100 50 1.0 V dB MW W pF OUTPUT CHARACTERISTICS ROUT VO IO Output Resistance Output Voltage Range Output Current "90 0.1 "3.0 "120 W V mA POWER SUPPLY VS IS,ON IS,OFF Operating Voltage Supply Range Power Supply Current − Enabled per amplifier Power Supply Current − Disabled per amplifier Crosstalk PSRR Power Supply Rejection Ratio VO = 0 V VO = 0 V Channel to Channel, f = 5.0 MHz (See Graph) 10 8.5 0.11 60 40 V mA mA dB dB 4. Guaranteed by design and/or characterization. http://onsemi.com 5 NCS2535 AC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 400 W, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit FREQUENCY DOMAIN PERFORMANCE BW Bandwidth 3.0 dB Small Signal 3.0 dB Large Signal 0.1 dB Gain Flatness Bandwidth Differential Gain Differential Phase MHz AV = +2.0, VO = 0.5 Vp−p AV = +2.0, VO = 1.0 Vp−p AV = +2.0 AV = +2.0, RL = 150 W, f = 3.58 MHz AV = +2.0, RL = 150 W, f = 3.58 MHz 600 300 100 0.01 0.01 MHz % ° GF0.1dB dG dP TIME DOMAIN RESPONSE SR ts Slew Rate Settling Time 0.01% 0.1% Rise and Fall Time Turn−on Time Turn−off Time AV = +2.0, Vstep = 1.0 V AV = +2.0, Vstep = 1.0 V AV = +2.0, Vstep = 1.0 V (10%−90%) AV = +2.0, Vstep = 1.0 V 1000 12 9.0 2.0 55 55 ns ns ns V/ms ns tr tf tON tOFF HARMONIC/NOISE PERFORMANCE THD HD2 HD3 IP3 SFDR eN iN Total Harmonic Distortion 2nd Harmonic Distortion 3rd Harmonic Distortion Third−Order Intercept Spurious−Free Dynamic Range Input Referred Voltage Noise Input Referred Current Noise f = 5.0 MHz, VO = 1.0 Vp−p f = 5.0 MHz, VO = 1.0 Vp−p f = 5.0 MHz, VO = 1.0 Vp−p f = 10 MHz, VO = 0.5 Vp−p f = 5.0 MHz, VO = 1.0 Vp−p f = 1.0 MHz f = 1.0 MHz, Inverting f = 1.0 MHz, Non−Inverting −60 −62 −66 28 55 6.0 10 3.0 dBc dBc dBc dBm dBc nV pA Hz Hz http://onsemi.com 6 NCS2535 DC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit DC PERFORMANCE VIO DVIO/DT IIB DIIB/DT VIH VIL Input Offset Voltage Input Offset Voltage Temperature Coefficient Input Bias Current Input Bias Current Temperature Coefficient Input High Voltage (Enable) (Note 5) Input Low Voltage (Enable) (Note 5) +Input (Non−Inverting), VO = 0 V −Input (Inverting), VO = 0 V (Note 5) +Input (Non−Inverting), VO = 0 V −Input (Inverting), VO = 0 V 1.875 −1.875 0 6.0 "3.0 "6.0 +40 −10 "5.0 mV mV/°C mA nA/°C V V INPUT CHARACTERISTICS VCM CMRR RIN CIN Input Common Mode Voltage Range Common Mode Rejection Ratio Input Resistance Differential Input Capacitance (See Graph) +Input (Non−Inverting) −Input (Inverting) "1.0 55 100 50 1.0 V dB MW W pF OUTPUT CHARACTERISTICS ROUT VO IO Output Resistance Output Voltage Range Output Current "90 0.1 "1.2 "120 W V mA POWER SUPPLY VS IS,ON IS,OFF Operating Voltage Supply Range Power Supply Current − Enabled per amplifier Power Supply Current − Disabled per amplifier Crosstalk PSRR Power Supply Rejection Ratio VO = 0 V VO = 0 V Channel to Channel, f = 5.0 MHz (See Graph) 5.0 8.0 0.09 60 40 V mA mA dB dB 5. Guaranteed by design and/or characterization. VIN + − VOUT RF RF RL Figure 4. Typical Test Setup (AV = +2.0, RF = 400 W, RL = 150 W) http://onsemi.com 7 NCS2535 3 2 NORMAILIZED GAIN(dB) NORMAILIZED GAIN(dB) 1 0 −1 −2 −3 −4 −5 −6 0.01 Gain = +2 VS = ±5V RF = 400W RL = 150W 0.1 VOUT = 2.0V 5 4 3 2 1 0 −1 −2 −3 −4 1000 10k Gain = +2 VS = ±5V RF = 400W RL = 150W 0.1 VOUT = 2.0V VOUT = 1.0V VOUT = 0.5V 100 1 10 FREQUENCY (MHz) 1000 10k VOUT = 1.0V VOUT = 0.5V 1 10 100 FREQUENCY (MHz) −5 0.01 Figure 5. Frequency Response: Gain (dB) vs. Frequency Av = +2.0 Figure 6. Frequency Response: Gain (dB) vs. Frequency Av = +1.0 3 2 NORMAILIZED GAIN(dB) NORMAILIZED GAIN(dB) 1 0 −1 −2 −3 −4 −5 Gain = +2 VS = ±5V VOUT = 2V RF = 400W RL = 150W 0.1 1 10 100 FREQUENCY (MHz) 1000 10k 5 4 3 2 1 0 −1 −2 −3 −4 −5 0.01 VS = ±5V VOUT = 0.5V RF = 400W RL = 150W 0.1 1 10 100 FREQUENCY (MHz) 1000 10k Gain = +2 Gain = +1 −6 0.01 Figure 7. Large Signal Frequency Response Gain (dB) vs. Frequency VS = ±5V Figure 8. Small Signal Frequency Response Gain (dB) vs. Frequency VS = ±5V Figure 9. Small Signal Step Response Vertical: 1V/div Horizontal: 10ns/div Figure 10. Large Signal Step Response Vertical: 2V/div Horizontal: 10ns/div http://onsemi.com 8 NCS2535 0.03 DIFFERENTIAL PHASE (°) DIFFERENTIAL GAIN (%) 0.02 0.01 0 VS = 5V RL = 150W Gain = +2 3.58MHz 4.43MHz 10MHz 20MHz 50MHz 0.02 0.015 0.01 0.005 0 3.58MHz 4.43MHz 10MHz 20MHz 50MHz −0.01 −0.005 −0.01 VS = 5V RL = 150W Gain = +2 −0.6 −0.4 −0.2 0 0.2 0.4 OFFSET VOLTAGE (V) 0.6 0.8 −0.02 −0.03 −0.8 −0.015 −0.6 −0.4 −0.2 0 0.2 0.4 OFFSET VOLTAGE (V) 0.6 0.8 −0.02 −0.8 Figure 11. Differential Gain Figure 12. Differential Phase 11 10.5 85°C CURRENT (mA) 10 9.5 9 8.5 8 4 5 6 7 8 9 POWER SUPPLY VOLTAGE (V) 10 11 −40°C 25°C CURRENT (mA) 0.13 0.125 0.12 0.115 0.11 0.105 0.1 0.095 0.09 0.085 0.08 4 5 6 7 8 9 POWER SUPPLY VOLTAGE (V) 10 11 −40°C 25°C 85°C Figure 13. Supply Current vs. Power Supply (Enabled) Figure 14. Supply Current vs. Power Supply (Disabled) 8 7.5 TRANSIMPEDANCE (W) 10 11 OUPUT VOLTAGE (VPP) 7 6.5 6 5.5 5 4.5 4 3.5 3 4 5 6 7 8 9 POWER SUPPLY VOLTAGE (V) 85°C −40°C 25°C 1M 100k 10k 1k 100 10 1 0.01 0.1 10 1 100 FREQUENCY (MHz) 1000 10k Figure 15. Output Voltage Swing vs. Supply Voltage Figure 16. Transimpedance (ROL) vs. Frequency http://onsemi.com 9 NCS2535 VS = ±5V EN EN OUT VS = ±5V OUT Output Signal: Squarewave, 10MHz, 2VPP Output Signal: Squarewave, 10MHz, 2VPP Figure 17. Turn ON Time Delay Vertical: (EN) 500mV/div (OUT) 1V/div Horizontal: 40ns/div 0 −20 CROSSTALK (dBc) −40 Channel 1 −60 Gain = +2 VS = ±5V Figure 18. Turn OFF Time Delay Vertical: (EN) 500mV/div (OUT) 1V/div Horizontal: 40ns/div Channel 3 −80 −100 −120 0.01 0.1 10 1 100 FREQUENCY (MHz) 1000 10k Figure 19. Crosstalk (dBc) vs. Frequency http://onsemi.com 10 NCS2535 General Design Considerations The current feedback amplifier is optimized for use in high performance video and data acquisition systems. For current feedback architecture, its closed−loop bandwidth depends on the value of the feedback resistor. The closed−loop bandwidth is not a strong function of gain, as is for a voltage feedback amplifier, as shown in Figure 20. 10 5 0 −5 RF = 300 W RF = 400 W RF = 500 W RF = 600 W use a current feedback amplifier with the output shorted directly to the inverting input. Printed Circuit Board Layout Techniques GAIN (dB) Proper high speed PCB design rules should be used for all wideband amplifiers as the PCB parasitics can affect the overall performance. Most important are stray capacitances at the output and inverting input nodes as it can effect peaking and bandwidth. A space (3/16″ is plenty) should be left around the signal lines to minimize coupling. Also, signal lines connecting the feedback and gain resistors should be short enough so that their associated inductance does not cause high frequency gain errors. Line lengths less than 1/4″ are recommended. Video Performance −10 −15 −20 0.1 AV = +2 VCC = +5 V VEE = −5 V 1.0 10 100 1000 10000 FREQUENCY (MHz) This device designed to provide good performance with NTSC, PAL, and HDTV video signals. Best performance is obtained with back terminated loads as performance is degraded as the load is increased. The back termination reduces reflections from the transmission line and effectively masks transmission line and other parasitic capacitances from the amplifier output stage. ESD Protection Figure 20. Frequency Response vs. RF The −3.0 dB bandwidth is, to some extent, dependent on the power supply voltages. By using lower power supplies, the bandwidth is reduced, because the internal capacitance increases. Smaller values of feedback resistor can be used at lower supply voltages, to compensate for this affect. Feedback and Gain Resistor Selection for Optimum Frequency Response A current feedback operational amplifier’s key advantage is the ability to maintain optimum frequency response independent of gain by using appropriate values for the feedback resistor. To obtain a very flat gain response, the feedback resistor tolerance should be considered as well. Resistor tolerance of 1% should be used for optimum flatness. Normally, lowering RF resistor from its recommended value will peak the frequency response and extend the bandwidth while increasing the value of RF resistor will cause the frequency response to roll off faster. Reducing the value of RF resistor too far below its recommended value will cause overshoot, ringing, and eventually oscillation. Since each application is slightly different, it is worth some experimentation to find the optimal RF for a given circuit. A value of the feedback resistor that produces X0.1 dB of peaking is the best compromise between stability and maximal bandwidth. It is not recommended to All device pins have limited ESD protection using internal diodes to power supplies as specified in the attributes table (see Figure 21). These diodes provide moderate protection to input overdrive voltages above the supplies. The ESD diodes can support high input currents with current limiting series resistors. Keep these resistor values as low as possible since high values degrade both noise performance and frequency response. Under closed−loop operation, the ESD diodes have no effect on circuit performance. However, under certain conditions the ESD diodes will be evident. If the device is driven into a slewing condition, the ESD diodes will clamp large differential voltages until the feedback loop restores closed−loop operation. Also, if the device is powered down and a large input signal is applied, the ESD diodes will conduct. NOTE: Human Body Model for +IN and –IN pins are rated at 0.8kV while all other pins are rated at 2.0kV. VCC External Pin VEE Internal Circuitry Figure 21. Internal ESD Protection http://onsemi.com 11 NCS2535 PACKAGE DIMENSIONS TSSOP−16 DT SUFFIX CASE 948F−01 ISSUE O 16X K REF 0.10 (0.004) 0.15 (0.006) T U S M TU S V S K K1 16 9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ 2X L/2 J1 B −U− L PIN 1 IDENT. 1 8 SECTION N−N J N 0.15 (0.006) T U S 0.25 (0.010) M A −V− N F DETAIL E C 0.10 (0.004) −T− SEATING PLANE H D G DETAIL E ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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