NCS6433DTBR2G

NCS6433 Wideband Quad 2:1 Video Switch The NCS6433 is a wide bandwidth, bidirectional, Quad 2:1, NMOS−based video switch suitable for dealing with video signals such as RGB, composite, S−Video, and component video (YPbPr). The NCS6433 is controlled by a single switch−enabled (OE) input. When OE is low the switch is enabled and the A port is connected to the B port. When OE is high the switch is disabled and the high−impedance state exists between the A and B ports. The line select (SEL) input controls the data path of the multiplexer/demultiplexer. The NCS6433 has a wide bandwidth, low crosstalk, low on resistance, and fast switching times making it suitable for high−frequency video applications in high definition LCD TV’s. http://onsemi.com MARKING DIAGRAMS 16 16 1 TSSOP−16 DTB SUFFIX CASE 948F 1 Features • • • • • • • • • • • • • Very Wide Frequency Bandwidth: 570 MHz Low Switch Serial Resistance RDS(on), 4 W Typical Power Supply Voltage, 5 V Less Than 0.25 ns Bidirectional Maximum Propagation Delay Through Switch Low Quiescent Current: 3 mA Maximum Very Low Crosstalk, −80 dB Typical at 10 MHz Control Inputs are TTL/CMOS Compatible Ideal for High Definition Video Applications ESD HBM Protection 8 kV Fast Switching − Better Than 10 ns Capable of Driving a High Current at the Output (>100 mA) Available in SOIC−16 or TSSOP−16 Package This is a Pb−Free Device Flat Panel Displays including LCDTV CRT Displays DVD Reader/Writer Set−Top Boxes 16 16 NCS6433G AWLYWW 1 SOIC−16 D SUFFIX CASE 751B 1 A WL, L Y WW, W G or G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS SEL 1B1 1B2 1A 2B1 2B2 2A GND Typical Applications • • • • NCS 6433 ALYWG G 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VCC OE 4B1 4B2 4A 3B1 3B2 3A TRUTH TABLE SEL OE Function X L H H L L Open A = B1 A = B2 PIN NAMES Pin OE SEL Description Bus Switch Enables Select Inputs A Bus A B1, B2 Bus B ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 August, 2008 − Rev. 1 1 Publication Order Number: NCS6433/D NCS6433 1A 1B1 1B2 2A 2B1 2B2 3A 3B1 3B2 4A 4B1 4B2 FLOW CONTROL OE SEL Figure 1. NCS6433 Block Diagram ORDERING INFORMATION Package Shipping† NCS6433DR2G SOIC−16 (Pb−Free) 2500 / Tape & Reel NCS6433DTBR2G TSSOP−16 (Pb−Free) 2500 / Tape & Reel Device Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NCS6433 ATTRIBUTES Characteristics Value ESD Protection Human Body Model, R = 1000 W, C = 100 pF (Note 1) Machine Model Flammability Rating 8 kV 2 kV 100 V I/O Pins 2−7, 9−14 All Pins All Pins Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in. Meets or exceeds JEDEC Spec EIA/JESD78 IC Latch−up Test 1. Meets or exceeds JEDEC spec JESD22−A114−B. 2. For additional information, see Application Note AND8003/D MAXIMUM RATINGS Parameter Symbol Value Unit VCC −0.5 to +5.5 V DC Input Voltage VI −0.5 to +5.5 V DC Output Voltage VO −0.5 to +5.5 V DC Input Diode Current IIK *50 mA DC Output Diode Current IOK *50 mA DC Output Sink Current IO 128 mA DC Supply Current per Supply Pin ICC $100 mA DC Ground Current per Ground Pin IGND $100 mA Storage Temperature Range TSTG −65 to +150 °C TL 260 °C TJ +150 °C qJA 125 170 °C/W DC Supply Voltage Lead Temperature, 1 mm from Case for 10 Seconds Junction Temperature Under Bias (Note 3) Thermal Resistance SOIC−16 TSSOP−16 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3. Maximum electrical ratings are defined as those values beyond which damage to the device may occur at TA = +25°C. RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Supply Voltage VI Input Voltage VO Output Voltage TA Operating Free−Air Temperature Dt/DV Input Transition Rise or Fall Rate Switch I/O Operating, Data Retention Only (Note 4) (HIGH or LOW State) Switch Control Input VCC = 5.0 V ± 0.5 V Min Max Unit 4.75 5.25 V 0 5.25 V 0 5.25 V −40 +85 °C 0 DC 5 ns/V 4. Unused control inputs may not be left open. All control inputs must be tied to a high or low logic input voltage level. http://onsemi.com 3 NCS6433 DC ELECTRICAL CHARACTERISTICS (TA = −40°C to +85°C for Min and Max values, TA = 25°C for Typ values) Symbol Parameter Conditions VCC (V) Min Typ* 4.5 −1.2 −0.8 2.0 IIN = −18 mA Max Unit VIK Clamp Diode Voltage V VIH High−Level Input Voltage 4.0 to 5.5 VIL Low−Level Input Voltage 4.0 to 5.5 0.8 V V ILI Input Leakage Current 0 ≤ VIN ≤ 5.5 V 5.5 ±1.0 mA IOZ Off−State Leakage Current 0 ≤ A, B ≤ VCC 5.5 ±1.0 mA RON Switch On Resistance (Note 5) VIN = 1 V, ION = 13 mA, RL = 75 W 4.5 4.0 7.0 W VIN = 2 V, ION = 26 mA, RL = 75 W 4.5 7.0 10 ICC Quiescent Supply Current VIN = VCC or GND, IOUT = 0 5.5 3.0 mA DICC Increase In ICC per Input One input at 3.4 V, Other inputs at VCC or GND 5.5 2.5 mA *Typical values are at VCC = 5.0 V and TA = 25°C. 5. Measured by the voltage drop between A and B pins at the indicated current through the switch. On resistance is determined by the lower of the voltages on the two (A or B) pins. AC ELECTRICAL CHARACTERISTICS (TA = −40°C to +85°C, CL = 20 pF, RU = RD = 75 W unless otherwise specified) (Note 6) VCC = 4.5−5.5 V Parameter Symbol Conditions Min Typ Max Unit tON Turn On Time RL = 75 W, CL = 20 pF, see Figure 7 2.8 5.0 ns tOFF Turn Off Time RL = 75 W, CL = 20 pF, see Figure 7 1.4 5.0 ns BW −3 dB Bandwidth RL = 150 W, TA = 25°C 570 MHz Xtalk Crosstalk Adjacent Non−Adjacent 10 MHz, CL = 0 pF, RL = 150 W −47 −80 dB Off Isolation 10 MHz, CL = 0 pF, RL = 150 W −48 dB OffISO 6. TA = )25°C, parameters characterized but not tested. CAPACITANCES (Note 7) Symbol CIN Parameter Conditions Min Typ Max Unit Control Pin Input Capacitance VCC = 5.0 V 2.0 pF CI/OA A Port Input/Output Capacitance VCC = OE = 5.0 V 5.0 pF CI/OB B Port Input/Output Capacitance VCC = OE = 5.0 V 5.0 pF 7. TA = )25°C, f = 1 MHz, Capacitance is characterized but not tested. http://onsemi.com 4 NCS6433 TYPICAL CHARACTERISTICS 3 0 −10 0 CROSSTALK (dB) −20 GAIN (dB) −3 −6 −9 −30 −40 −50 −60 −70 −12 −80 −15 −90 −100 0.1 1 10 100 1000 10,000 1 10 100 1000 FREQUENCY (MHz) FREQUENCY (MHz) Figure 2. Gain vs. Frequency Figure 3. Crosstalk vs. Frequency (Non−Adjacent Channels) 10,000 0 0 −10 −10 −20 −20 OFF ISOLATION (dB) CROSSTALK (dB) 0.1 −30 −40 −50 −60 −70 −30 −40 −50 −60 −70 −80 −80 −90 −100 −90 −100 0.1 1 10 100 1000 10,000 0.1 1 10 100 1000 FREQUENCY (MHz) FREQUENCY (MHz) Figure 4. Crosstalk vs. Frequency (Adjacent Channels) Figure 5. Off Isolation vs. Frequency B1 High = 3 V 0V A B2 Low = 0 V 3V NCS6433 VCC SEL GND OE Vout VCC RD 75 W SEL = LOW ≥ A = B1 SEL = HIGH ≥ A = B2 Figure 6. AC Test Circuit for Turn−on and Turn−off Times http://onsemi.com 5 20 pF CL 10,000 NCS6433 Figure 7. Turn−on and Turn−off Times VNA S1 S2 VB 75W Vin (1VPP) DUT B A B A 20pF CL SEL OE 1mF SEL = LOW w A = B1 SEL = HIGH w A = B2 VCC Figure 8. Gain, Crosstalk, Off−Isolation http://onsemi.com 6 NCS6433 Vcc = +5 V Y1 Pb1 Pr1 Pr2 1B1 1B2 1A 2B1 2B2 2A 3B1 3B2 3A Y Pb Pr 4B1 4B2 Vcc = +5 V TV/PC_SEL Y2 Pb2 Flow Control OE SEL 4A 0.1 mF NCS6433 Flow Control OE Y 1B1 VGA_R 1B2 1A Pb 2B1 VGA_R VGA_G VGA_B VGA_G 2B2 2A Pr 3B1 VGA_B 3B2 3A R/Y VIDEO PROCESSING HD_SEL 0.1 mF NCS6433 SEL G / Pb B / Pr 4B1 VGA_Hs 4B2 VGA_Vs 4A VGA_Hs VGA_Vs Figure 9. Example of LCDTV Application Using the Video Switch NCS6433 http://onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−16 CASE 751B−05 ISSUE K DATE 29 DEC 2006 SCALE 1:1 −A− 16 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 −B− 1 P 8 PL 0.25 (0.010) 8 M B S G R K F X 45 _ C −T− SEATING PLANE J M D DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 16 PL 0.25 (0.010) M T B S A S STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE STYLE 3: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR, DYE #1 BASE, #1 EMITTER, #1 COLLECTOR, #1 COLLECTOR, #2 BASE, #2 EMITTER, #2 COLLECTOR, #2 COLLECTOR, #3 BASE, #3 EMITTER, #3 COLLECTOR, #3 COLLECTOR, #4 BASE, #4 EMITTER, #4 COLLECTOR, #4 STYLE 4: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. STYLE 5: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. DRAIN, DYE #1 DRAIN, #1 DRAIN, #2 DRAIN, #2 DRAIN, #3 DRAIN, #3 DRAIN, #4 DRAIN, #4 GATE, #4 SOURCE, #4 GATE, #3 SOURCE, #3 GATE, #2 SOURCE, #2 GATE, #1 SOURCE, #1 STYLE 6: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE STYLE 7: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. SOURCE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE P‐CH SOURCE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE N‐CH COLLECTOR, DYE #1 COLLECTOR, #1 COLLECTOR, #2 COLLECTOR, #2 COLLECTOR, #3 COLLECTOR, #3 COLLECTOR, #4 COLLECTOR, #4 BASE, #4 EMITTER, #4 BASE, #3 EMITTER, #3 BASE, #2 EMITTER, #2 BASE, #1 EMITTER, #1 SOLDERING FOOTPRINT 8X 6.40 16X 1 1.12 16 16X 0.58 1.27 PITCH 8 9 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98ASB42566B SOIC−16 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP−16 CASE 948F−01 ISSUE B 16 DATE 19 OCT 2006 1 SCALE 2:1 16X K REF 0.10 (0.004) 0.15 (0.006) T U M T U S V S K S ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ K1 2X L/2 16 9 J1 B −U− L SECTION N−N J PIN 1 IDENT. N 8 1 0.25 (0.010) M 0.15 (0.006) T U S A −V− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. N F DETAIL E −W− C 0.10 (0.004) −T− SEATING PLANE D H G DETAIL E DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT 7.06 16 XXXX XXXX ALYW 1 1 0.65 PITCH 16X 0.36 DOCUMENT NUMBER: DESCRIPTION: 16X 1.26 98ASH70247A TSSOP−16 DIMENSIONS: MILLIMETERS XXXX A L Y W G or G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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