DATA SHEET
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Current-Shunt Monitors,
Voltage Output,
Bidirectional Zero-Drift,
Low- or High-Side Current
Sensing
NCS210R,
NCS211R,
NCS213R,
NCS214R,
SC70−6
SQ SUFFIX
CASE 419B
MARKING DIAGRAM
6
XXMG
G
XXXMG
G
1
XXX
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
REF
GND
OUT
REF
Features
*NC
1
*NC
IN+
Vs
IN−
IN−
IN+
Wide Common Mode Input Range: −0.3 V to 26 V
Supply Voltage Range: 2.2 V to 26 V
Low Offset Voltage: ±35 mV max
Low Offset Drift: 0.5 mV/°C
Low Gain Error: 1% max
Low Gain Error Drift: 10 ppm/°C max
Rail−to−Rail Output Capability
Low Current Consumption: 40 mA typ, 80 mA max
NCV Prefix for Automotive and Other Applications Requiring
Unique Site Qualified and PPAP Capable
1
OUT
GND
IN−
Vs
IN+
(Top Views)
*NC denotes no internal connection. These pins can
be left floating or connected to any voltage between
VS and GND.
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 2 of this data sheet.
Typical Applications
•
•
•
•
•
1
UQFN10
MU SUFFIX
CASE 488AT
NCV210R,
NCV211R,
NCV213R,
NCV214R
The NCS210R, NCS211R, NCS213R and NCS214R are voltage
output, current shunt monitors (also called current sense amplifiers)
which can measure voltage across shunts at common−mode voltages
from −0.3 V to 26 V, independent of supply voltage. The low offset of
the zero−drift architecture enables current sensing across the shunt
with maximum voltage drop as low as 10 mV full−scale. These
devices can operate from a single +2.2 V to +26 V power supply,
drawing a maximum of 80 mA of supply current, and are specified over
the extended operating temperature range (–40°C to +125°C).
Available in the SC70−6 and UQFN10 packages.
•
•
•
•
•
•
•
•
•
1
Current Sensing (High−Side/Low−Side)
Automotive
Telecom
Power Management
Battery Charging and Discharging
© Semiconductor Components Industries, LLC, 2018
August, 2021 − Rev. 8
1
Publication Order Number:
NCS210R/D
NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R
Supply
R SHUNT
Load
NCS21xR
R1
R3
-
IN-
Output
OUT
+
IN+
Reference
Voltage
R4
VS
GND
REF
R2
+2.2 V to +26 V
0.01 uF
To
0.1 uF
V OUT + ǒI LOAD
R SHUNTǓGAIN ) V REF
Figure 1. Example Application Schematic of High−Side Current Sensing
ORDERING INFORMATION
Gain
R3 and R4
R1 and R2
Marking
Package
Shipping†
NCS210RSQT2G
200
5 kW
1 MW
AVY
SC70−6
3000 / Tape and Reel
NCV210RSQT2G*
200
5 kW
1 MW
AVY
SC70−6
3000 / Tape and Reel
NCS210RMUTAG
200
5 kW
1 MW
CP
UQFN10
3000 / Tape and Reel
NCS211RSQT2G
500
2 kW
1 MW
AVZ
SC70−6
3000 / Tape and Reel
NCV211RSQT2G*
500
2 kW
1 MW
AVZ
SC70−6
3000 / Tape and Reel
NCS213RSQT2G
50
20 kW
1 MW
AV3
SC70−6
3000 / Tape and Reel
NCV213RSQT2G*
50
20 kW
1 MW
AV3
SC70−6
3000 / Tape and Reel
NCS214RSQT2G
100
10 kW
1 MW
AV4
SC70−6
3000 / Tape and Reel
NCV214RSQT2G*
100
10 kW
1 MW
AV4
SC70−6
3000 / Tape and Reel
NCS214RMUTAG
100
10 kW
1 MW
CR
UQFN10
3000 / Tape and Reel
NCS211RMUTAG
500
2 kW
1 MW
CM
UQFN10
3000 / Tape and Reel
NCS213RMUTAG
50
20 kW
1 MW
CQ
UQFN10
3000 / Tape and Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
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2
NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R
Table 1. MAXIMUM RATINGS
Parameter
Supply Voltage (Note 1)
Analog Inputs
Differential (VIN+)−(VIN−)
Symbol
Value
Unit
VS
+30
V
VIN+, VIN−
−30 to +30
V
Common−Mode (Note 2)
(GND−0.3) to +30
REF Input
VREF
(GND−0.3) to (Vs +0.3)
V
Output (Note 2)
VOUT
(GND−0.3) to (Vs +0.3)
V
5
mA
Input Current into Any Pin (Note 2)
Maximum Junction Temperature
TJ(max)
+150
°C
Storage Temperature Range
TSTG
−65 to +150
°C
ESD Capability, Human Body Model (Note 3)
HBM
±2000
V
Charged Device Model (Note 3)
CDM
±2000
V
ILU
100
mA
Latch−Up Current (Note 4)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe
operating parameters.
2. Input voltage at any pin may exceed the voltage shown if current at that pin is limited to 5 mA.
3. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per JEDEC standard JS−001−2017 (AEC−Q100−002).
ESD Charged Device Model tested per JEDEC standard JS−002−2014 (AEC−Q100−011).
4. Latch−up Current tested per JEDEC standard JESD78E (AEC−Q100−004)
Table 2. RECOMMENDED OPERATING RANGES
Parameter
Symbol
Min
Typ
Max
Unit
VCM
−0.3
12
26
V
Supply Voltage
VS
2.2
5
26
V
Ambient Temperature
TA
−40
125
°C
Common−mode input voltage
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Table 3. THERMAL CHARACTERISTICS (Note 5)
Parameter
Thermal Resistance, Junction−to−Air (Note 6)
SC70
UQFN10
Symbol
Value
Unit
RqJA
250
150
°C/W
5. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe
operating parameters.
6. Values based on copper area of 645 mm2 (or 1 in2) of 1 oz copper thickness and FR4 PCB substrate.
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NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R
Table 4. ELECTRICAL CHARACTERISTICS At TA = +25°C, VSENSE = VIN+ − VIN−;
NCS210R, NCS213R and NCS214R: VS = +5 V, VIN+ = 12 V, and VREF = VS/2, unless otherwise noted.
NCS211R: VS = +12 V, VIN+ = 12 V, and VREF = VS/2, unless otherwise noted.
Boldface limits apply over the specified temperature range of TA = −40°C to 125°C, guaranteed by characterization and/or design.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
INPUT
VCM
CMRR
Common−Mode Input Voltage Range
Common−Mode Rejection
Ratio
NCx210R,
NCx211R,
NCx214R
−0.3
VIN+ = 0 V to +26 V,
VSENSE = 0 mV
TA = −40°C to 125°C)
NCx213R
VOS
dVOS/dT
PSRR
Offset Voltage RTI
(Note 7)
RTI vs Temperature
(Note 7)
NCx210R,
NCx211R
26
105
125
100
120
VSENSE = 0 mV
V
dB
±0.55
±35
NCx213R
±5
±100
NCx214R
±1
±60
VSENSE = 0 mV
TA = –40°C to +125°C
0.1
0.5
mV/°C
VS = +2.7 V to +26 V,
VIN+ =18 V, VSENSE = 0 mV
±0.1
±10
mV/V
60
mA
NCx21xR
RTI vs Power Supply Ratio (Note 7)
mV
IIB
Input Bias Current
VSENSE = 0 mV
39
IIO
Input Offset Current
VSENSE = 0 mV
±0.1
mA
NCx210R
200
V/V
NCx211R
500
NCx213R
50
OUTPUT
G
Gain
NCx214R
EG
Gain Error
NCx21xR
EG
Gain Error vs Temperature
NCx21xR
Nonlinearity Error
CL
Maximum Capacitive Load
100
VSENSE = −5 mV to 5 mV,
TA = −40°C to 125°C
±0.2
+1
%
10
ppm/°C
TA = −40°C to 125°C
3
VSENSE = −5 mV to 5 mV
±0.01
%
No sustained oscillation
1
nF
RL = 10 kW to GND
TA = –40°C to +125°C (Note 8)
VS −
0.075
VS − 0.2
V
RL = 10 kW to GND
TA = –40°C to +125°C
VGND
+0.005
VGND
+0.05
V
CLOAD = 10 pF
40
VOLTAGE OUTPUT
VOH
Swing to VS Power Supply Rail
VOL
Swing to GND
FREQUENCY RESPONSE
BW
SR
Bandwidth (f−3dB)
NCx210R
NCx211R
25
NCx213R
90
NCx214R
60
Slew Rate
kHz
1
V/ms
NOISE
en
Voltage Noise Density
f = 1 kHz
45
POWER SUPPLY
VS
Operating Voltage Range
IQ
Quiescent Current
Quiescent Current over Temperature
TA = –40°C to +125°C
VSENSE = 0 mV
TA = –40°C to +125°C
2.2
40
26
V
80
mA
100
mA
7. RTI = referenced−to−input
8. VS = 5 V for NCx211R
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R
TYPICAL CHARACTERISTICS (TA = 25°C, VS = 5 V, VIN+ = 12 V and VREF = VS/2 unless otherwise noted.)
(The NCS210R is used for Typical Characteristics)
100
1800
80
INPUT OFFSET VOLTAGE (mV)
2000
POPULATION
1600
1400
1200
1000
800
600
400
200
0
−35 −30 −25 −20 −15 −10 −5
0
10 15 20 25 30 35
5
20
0
−20
−40
−60
−80
−100
−50
−10
0
25
85
125
150
Figure 2. Input Offset Voltage Production
Distribution
Figure 3. Input Offset Voltage vs. Temperature
4500
5
4000
4
3000
2500
2000
1500
1000
500
0
−5
−40
TEMPERATURE (°C)
COMMON−MODE REJECTION
RATIO (mV/V)
POPULATION
40
INPUT OFFSET VOLTAGE (mV)
3500
−4
−3
−2
−1
0
1
2
3
4
5
3
2
1
0
−1
−2
−3
−4
−5
−50
−40
−10
0
25
85
125
150
COMMON−MODE REJECTION RATIO (mV/V)
TEMPERATURE (°C)
Figure 4. Common−Mode Rejection
Production Distribution
Figure 5. Common−Mode Rejection Ratio vs.
Temperature
9000
1.0
8000
0.8
7000
0.6
GAIN ERROR (%)
POPULATION
60
6000
5000
4000
3000
0.4
0.2
0
−0.2
−0.4
2000
−0.6
1000
−0.8
−1.0
−50
0
−1.0 −0.8 −0.6 −0.4 −0.2
0
0.2
0.4
0.6
0.8
1.0
−40
−10
0
25
85
125
GAIN ERROR (%)
TEMPERATURE (°C)
Figure 6. Gain Error Production Distribution
Figure 7. Gain Error vs. Temperature
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5
150
NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R
TYPICAL CHARACTERISTICS (TA = 25°C, VS = 5 V, VIN+ = 12 V and VREF = VS/2 unless otherwise noted.)
70
60
40
30
20
NCS210R
NCS211R
NCS213R
NCS214R
10
0
COMMON−MODE REJECTION RATIO (dB)
−10
10
100
1k
10k
100k
1M
10M
140
120
100
80
60
VS = 5 V + 250 mVpp
VCM = 0 V
VREF = 2.5 V
VDIF = shorted
CL = 15 pF
40
20
0
10
100
1k
10k
100k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 9. Power Supply Rejection Ratio vs.
Frequency
160
V+
140
V(+)−0.5
120
100
80
60
VS = 5 V
Sine Disturbance = 1 Vpp
VCM = 12 V
VREF = 2.5 V
CL = 15 pF
40
20
0
160
Figure 8. Gain vs. Frequency
OUTPUT VOLTAGE (V)
GAIN (dB)
50
POWER SUPPLY REJECTION RATIO (dB)
(The NCS210R is used for Typical Characteristics)
10
100
1k
V(+)−1.0
V(+)−1.5
−40°C
V(+)−2.0
125°C
25°C
V(+)−2.5
10k
100k
V(+)−3.0
1M
0
2
4
6
8
10
12
FREQUENCY (Hz)
OUTPUT CURRENT (mA)
Figure 10. Common−Mode Rejection Ratio vs.
Frequency
Figure 11. Positive Output Voltage Swing vs.
Output Current, VS = 2.2 V
14
V+
GND+3.0
OUTPUT VOLTAGE (V)
125°C
25°C
OUTPUT VOLTAGE (V)
V(+)−0.5
GND+2.5
−40°C
GND+2.0
GND+1.5
GND+1.0
V(+)−1.0
V(+)−1.5
V(+)−2.0
GND+0.5
V(+)−2.5
GND
V(+)−3.0
0
2
4
6
8
10
12
14
−40°C
125°C
0
2
4
6
8
10
25°C
12
14
16
18
OUTPUT CURRENT (mA)
OUTPUT CURRENT (mA)
Figure 12. Negative Output Voltage Swing vs.
Output Current, VS = 2.2 V
Figure 13. Positive Output Voltage Swing vs.
Output Current, VS = 2.7 V
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20
NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R
TYPICAL CHARACTERISTICS (TA = 25°C, VS = 5 V, VIN+ = 12 V and VREF = VS/2 unless otherwise noted.)
(The NCS210R is used for Typical Characteristics)
V+
GND+3.0
125°C
−40°C
V(+)−0.5
OUTPUT VOLTAGE (V)
GND+2.5
OUTPUT VOLTAGE (V)
25°C
GND+2.0
GND+1.5
GND+1.0
0
2
4
8
6
10
12
14
16
18
V(+)−3.0
20
0
2
4
6
8
10
12
25°C
14 16
−40°C
18
20
22 24
Figure 14. Negative Output Voltage Swing vs.
Output Current, VS = 2.7 V
Figure 15. Positive Output Voltage Swing vs.
Output Current, VS = 5 V
25°C
125°C
V+
−40°C
V(+)−0.5
OUTPUT VOLTAGE (V)
GND+2.0
GND+1.5
GND+1.0
V(+)−1.0
V(+)−1.5
V(+)−2.0
GND+0.5
V(+)−2.5
GND
V(+)−3.0
0
2
4
6
8
10
12
14
16
18
20
22 24
125°C
0
2
4
6
8
10
12
25°C
14 16
−40°C
18
20
22 24
OUTPUT CURRENT (mA)
OUTPUT CURRENT (mA)
Figure 16. Negative Output Voltage Swing vs.
Output Current, VS = 5 V
Figure 17. Positive Output Voltage Swing vs.
Output Current, VS = 26 V
GND+3.0
25°C
70
−40°C
INPUT BIAS CURRENT (mA)
125°C
GND+2.5
GND+2.0
GND+1.5
GND+1.0
GND+0.5
GND
125°C
OUTPUT CURRENT (mA)
GND+2.5
OUTPUT VOLTAGE (V)
V(+)−2.0
OUTPUT CURRENT (mA)
GND+3.0
OUTPUT VOLTAGE (V)
V(+)−1.5
V(+)−2.5
GND+0.5
GND
V(+)−1.0
0
2
4
6
8
10
12
14
16
18
20
22 24
60
IB+, IB−, VREF = 0 V
50
IB+, IB−, VREF = 2.5 V
40
30
20
10
0
−10
0
5
10
15
20
25
OUTPUT CURRENT (mA)
COMMON−MODE VOLTAGE (V)
Figure 18. Negative Output Voltage Swing vs.
Output Current, VS = 26 V
Figure 19. Input Bias Current vs.
Common−Mode Voltage with VS = 5 V
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30
NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R
TYPICAL CHARACTERISTICS (TA = 25°C, VS = 5 V, VIN+ = 12 V and VREF = VS/2 unless otherwise noted.)
(The NCS210R is used for Typical Characteristics)
45
IB+, IB−, VREF = 0 V
25
INPUT BIAS CURRENT (mA)
INPUT BIAS CURRENT (mA)
30
20
IB+, VREF = 2.5 V
15
IB−, VREF = 2.5 V
10
5
0
−5
0
5
10
15
20
25
25
20
15
10
0
−50
−40
−10
0
25
85
125
150
COMMON−MODE VOLTAGE (V)
TEMPERATURE (°C)
Figure 20. Input Bias Current vs. Common−Mode
Voltage with VS = 0 V (Shutdown)
Figure 21. Input Bias Current vs. Temperature
VOLTAGE NOISE DENSITY (nV/√Hz)
QUIESCENT CURRENT (mA)
30
30
90
80
70
60
50
40
30
20
10
0
−50
−40
−10
0
25
85
125
10
NCS210R
NCS211R
NCS213R
NCS214R
1
1
10
VS = ±2.5 V
VREF = 0 V
VIN−, VIN+ = 0 V
RL = 10 kW
100
1k
10k
100k
TEMPERATURE (°C)
FREQUENCY (Hz)
Figure 22. Quiescent Current vs. Temperature
Figure 23. Voltage Noise Density vs.
Frequency
OUTPUT VOLTAGE
(0.5 V/div)
VS = ±2.5 V
VREF = 0 V
VIN−, VIN+ = 0 V
RL = 10 kW
800
600
400
200
0
INPUT VOLTAGE
(5 mV/div)
−200
−400
−600
0
100
150
1000
VOLTAGE (nV)
35
5
100
−800
−1000
40
1
2
3
4
5
6
7
8
9
10
−0.2 −0.1 0
OUTPUT
INPUT
0.1
0.2
0.3
0.4
0.5
TIME (s)
TIME (s)
Figure 24. 0.1 Hz to 10 Hz Voltage Noise
(Referred to Input)
Figure 25. Step Response
(10 mVpp Input Step)
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0.6
0.7 0.8
NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R
TYPICAL CHARACTERISTICS (TA = 25°C, VS = 5 V, VIN+ = 12 V and VREF = VS/2 unless otherwise noted.)
(The NCS210R is used for Typical Characteristics)
200
INPUT VOLTAGE (V)
6
150
INPUT
5
100
4
50
3
0
OUTPUT
2
−50
1
−100
0
−150
−1
−2
−100 −50
0
50
12
8
6
4
2
Output
0
−200
−250
100 150 200 250 300 350 400
−2
−200
0
200
400
600
800
1000 1200 1400
TIME (ms)
TIME (ms)
Figure 26. Common−Mode Voltage Transient
Response
Figure 27. Inverting Differential Input Overload
6
12
Noninverting Input
10
VOLTAGE (V)
4
6
Output
4
3
1
0
0
0
200
400
600
800
1000
Output Voltage
2
2
VDIFF = 0 V
VREF = 0 V
−1
−200 −100 0
1200 1400
100 200 300 400 500 600 700 800
TIME (ms)
TIME (ms)
Figure 28. Noninverting Differential Input
Overload
Figure 29. Start−Up Response
6
Supply Voltage
5
VOLTAGE (V)
−2
−200
Supply Voltage
5
8
VOLTAGE (V)
Inverting Input
10
VOLTAGE (V)
250
OUTPUT VOLTAGE (mV)
8
7
4
3
Output Voltage
2
1
0
−200 −100 0
VDIFF = 0 V
VREF = 2.5 V
100 200 300 400 500 600 700
TIME (ms)
Figure 30. Brownout Recovery
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800
NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R
Basic Connections
Current Sensing Techniques
current monitoring. Figure 31 shows the NCS21xR circuit
implementation for unidirectional operation using
high−side current sensing.
Basic connections for unidirectional operation include
connecting the load power supply, connecting a current
shunt to the differential inputs of the NCS21xR, grounding
the REF pin, and providing a power supply for the
NCS21xR. The NCS21xR can be connected to the same
power supply that it is monitoring current from, or it can be
connected to a separate power supply. If it is necessary to
detect short circuit current on the load power supply, which
may cause the load power supply to sag to near zero volts,
a separate power supply must be used on the NCS21xR.
When using multiple supplies, there are no restrictions on
power supply sequencing.
When no current is flowing though the RSHUNT, and the
REF pin is connected to ground, the NCS21xR output is
expected to be within 50 mV of ground. When current is
flowing through RSHUNT, the output will swing positive, up
to within 200 mV of the applied supply voltage, VS.
The NCS21xR current−sense amplifiers can be
configured for both low−side and high−side current sensing.
Low−side sensing appears to have the advantage of being
straightforward, inexpensive, and can be implemented with
a simple op amp circuit. However, the NCS21xR series of
devices provides the full differential input necessary to get
accurate shunt connections, while also providing a built−in
gain network with precision difficult to obtain with external
resistors. While at times the application requires low−side
sensing, only high−side sensing can detect a short from the
positive supply line to ground. Furthermore, high−side
sensing avoids adding resistance to the ground path of the
load being measured. The sections below focus primarily on
high−side current sensing.
Unidirectional Operation
In unidirectional current sensing, the current always flows
in the same direction. Common applications for
unidirectional operation include power supplies and load
Supply
RSHUNT
Load
NCS21xR
R1
R3
-
IN-
OUT
Output
+
IN+
R4
VS
GND
REF
R2
+2.2 V to +26 V
0.01uF
To
0.1uF
Figure 31. Basic Unidirectional Connection
Bidirectional Operation
REF pin. The voltage applied to the REF pin depends on the
application. However, most often it is biased to either half of
the supply voltage or to half the value of the measurement
system reference. Figure 32 shows bidirectional operation
with three different circuit choices that can be connected to
the REF pin to provide a voltage reference to the NCS21xR.
In bidirectional current sensing, the current
measurements are taken when current is flowing in both
directions. For example, in fuel gauging, the current is
measured when the battery is being charged or discharged.
Bidirectional operation requires the output to swing both
positive and negative around a bias voltage applied to the
www.onsemi.com
10
NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R
Supply
R SHUNT
Load
NCS21xR
R1
R3
IN-
-
IN+
+
Output
OUT
R4
REF
Vs
+2.2 V to +26 V
0.01uF
To
0.1uF
Connect to any one of 3 possible circuits shown
GND
R2
Supply
Supply
Supply
(a)
-
Series
Reference
Shunt
Reference
or zener
+
Op Amp
(e.g. NCS2003, NCS20071)
(b)
(c)
(d)
Figure 32. Bidirectional Current Sensing with Three Example Voltage Reference Circuits
Input and Output Filtering
The REF pin must always be connected to a low
impedance circuit, such as in the Figure 32(b), (c), and (d).
The REF pin can be connected directly to any voltage supply
or voltage reference (shunt or series). However, if a resistor
divider network is used to provide the reference voltage, a
unity gain buffer circuit must be used, as shown in
Figure 32(d).
In bidirectional applications, any voltage that exceeds
VS+0.3 V applied to the REF pin will forward bias an ESD
diode between the REF pin and the VS pin. Note that this
exceeds the Absolute Maximum Ratings for the device.
Filtering at the input or output may be required for several
different reasons. In this section we will discuss the main
considerations with regards to these filter circuits.
In some applications, the current being measured may be
inherently noisy. In the case of a noisy signal, filtering after
the output of the current sense amplifier is often simpler,
especially where the amplifier output is fed into high
impedance circuitry. The amplifier output node provides the
greatest freedom when selecting components for the filter
and is very straightforward to implement, although it may
require subsequent buffering.
Other applications may require filtering at the input of the
current sense amplifier. Figure 33 shows the recommended
schematic for input filtering.
www.onsemi.com
11
NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R
NCS21xR
RFILT1
10W
RSHUNT
200mW
1nH
CFILT
0.25mF
IN-
-
IN+
+
OUT
Reference
Voltage
RFILT2
10W
GND
REF
VS
Figure 33. Input filtering compensates for shunt inductance on shunts
less than 1 mW, as well as high frequency noise in any application
high frequency spike transient events on the current sensing
line that can overload the front end of any shunt current
sensing IC. This problem must be solved by filtering at the
input of the amplifier. Note that all current sensing IC’s are
vulnerable to this problem, regardless of manufacturer
claims. Filtering is required at the input of the device to
resolve this problem, even if the spike frequencies are above
the rated bandwidth of the device.
Input filtering is complicated by the fact that the added
resistance of the filter resistors and the associated resistance
mismatch between them can adversely affect gain, CMRR,
and VOS. The effect on VOS is partly due to input bias
currents as well. As a result, the value of the input resistors
should be limited to 10 W or less. Ideally, select the capacitor
to exactly match the time constant of the shunt resistor and
its inductance; alternatively, select the capacitor to provide
a pole below that point. As an example, a filtering frequency
of 100 kHz would require an 80 nF capacitor. The capacitor
can have a low voltage rating, but should have good high
frequency characteristics.
Make the input filter time constant equal to or larger than
the shunt and its inductance time constant:
Advantages When Used for Low−Side Current Sensing
The NCS21xR series offer many advantages for low−side
current sensing. The true differential input is ideal for
connection to either Kelvin Sensing shunts or conventional
shunts. Additionally, the true differential input rejects the
common−mode noise often present even in low−side current
sensing. The NCS21xR also provides a reference pin to set
the output offset from an external reference. Providing all of
these features in a tiny package makes the NCS21xR very
competitive when compared to discrete op amp solutions.
L SHUNT
v 2 @ R FILT @ C FILT
R SHUNT
This simplifies to determine the value of CFILT based on
using 10 W resistors for each RFILT:
C FILT w
L SHUNT
20R SHUNT
Designing for Input Transients Exceeding 30 Volts
For applications that have transient common−mode
voltages greater than 30 volts, external input resistors of
10 W provide a convenient location to add either Zener
diodes or transient voltage suppression diodes (also known
as TVS diodes). There are two possible configurations: one
using a single TVS diode with diodes across the amplifier
inputs as shown in Figure 34, and the second configuration
using two TVS diodes as shown in Figure 35.
If the main purpose is to filter high frequency noise, the
capacitor should be increased to a value that provides the
desired filtering.
As the shunt resistors decrease in value, shunt inductance
can significantly affect frequency response. At values below
1 mW, the shunt inductance causes a zero in the transfer
function that often results in corner frequencies in the low
100’s of kHz. This inductance increases the amplitude of
www.onsemi.com
12
NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R
NCS21xR
RFILT1
10W
RSHUNT
200mW
1nH
D1, D2
1N4148
IN-
-
IN+
+
OUT
Reference
Voltage
RFILT2
10W
GND
REF
VS
TVS1
onsemi
SMBJ18(C)A
Figure 34. Single TVS transient common−mode protection
TVS1
onsemi
SMBJ18(C)A
NCS21xR
RFILT1
10W
RSHUNT
200mW
1nH
IN-
-
IN+
+
OUT
Reference
Voltage
RFILT2
10W
GND
REF
VS
TVS2
onsemi
SMBJ18(C)A
Figure 35. Dual TVS Transient Common−mode Protection
Selecting the Shunt Resistor
Use Zener diodes or unidirectional TVS diodes with
clamping voltage ratings up to a maximum of 30 volts.
Select TVS diodes with the lowest voltage rating possible
for use in the system. There is a wide range between standoff
voltage and maximum clamping voltage in TVS diodes.
Most diodes rated at a standoff voltage of 18 V have a
maximum clamping voltage of 29.2 V. Refer to the TVS data
sheet and the parameters of your power supply to make the
selection. In general, higher power TVS diodes demonstrate
a sharper clamping knee; providing a tighter relationship
between rated breakdown and maximum clamping voltage.
The desired accuracy of the current measurement
determines the precision, shunt size, and the resistor value.
The larger the resistor value, the more accurate the
measurement possible, but a large resistor value also results
in greater current loss.
For the most accurate measurements, use four terminal
current sense resistors, as shown in Figure 36. It provides
two terminals for the current path in the application circuit,
and a second pair for the voltage detection path of the sense
amplifier. This technique is also known as Kelvin Sensing.
This insures that the voltage measured by the sense amplifier
is the actual voltage across the resistor and does not include
the small resistance of a combined connection. When using
non−Kelvin shunts, follow manufacturer recommendations
on how to lay out the sensing traces closely.
www.onsemi.com
13
NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R
Current Output Configuration
In applications where the readout boards are remotely
located, the voltage output of the NCS21xR can be
converted to a precision current output. The precision output
current measurements are read more accurately as it
overcomes the errors due to ground drops between the
boards.
Figure 36. Surface Mount Kelvin Shunt
System Data Readout Board
Current Measurement Circuit Board
RITOV
1kW
NCS21xR
RIOUT
1kW
-
IN-
V=I*R
IIOUT
+
IN+
+
-
OUT
ADC
Line Receiver
(e.g. NCS2003)
GND
REF
VS
Stray ground
resistance between boards
Figure 37. Remote Current Sensing
As shown in Figure 37, the RIOUT resistor is added
between the OUT pin and the REF pin to convert the voltage
output to a current output which is taken from the REF pin
to the readout board. This circuit is intended to function with
low potentials between the boards due to ground drops or
noise. The current output is simply the relationship of the
normal output voltage of the NCS21xR:
I OUT +
overcome most ground voltage drop, stray voltages, and
noise. However, accuracy will degrade if noise or ground
drops exceed 1 V.
Shutting Down the NCS21xR
While the NCS21xR does not provide a shutdown pin, a
simple MOSFET, power switch, or logic gate can be used to
switch off the power to the NCS21xR and eliminate the
quiescent current. Note that the shunt input pins will always
have a current flow via the input and feedback resistors (total
resistance of each leg always equals slightly higher than
1 MW). Also note that when powered, the shunt input pins
will exhibit the specified and well−matched typical bias
current of 39 mA. The shunt input pins support the rated
common mode voltage even when the NCS21xR does not
have power applied.
V OUT
R IOUT
A resistor value of 1 kW for RIOUT is always a convenient
value as it provides 1 mA/V scaling.
On the readout board, for simplicity, RITOV can be equal
to RIOUT to provide identical voltage drops across both. It is
important to take into consideration that RITOV and RIOUT
add additional voltage drops in the current measurement
path. The current source can provide enough compliance to
www.onsemi.com
14
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
1
SCALE 2:1
DATE 11 DEC 2012
2X
aaa H D
D
H
A
D
6
5
GAGE
PLANE
4
1
2
L
L2
E1
E
DETAIL A
3
aaa C
2X
bbb H D
2X 3 TIPS
e
B
6X
b
ddd
TOP VIEW
C A-B D
M
A2
DETAIL A
A
6X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
ccc C
A1
SIDE VIEW
C
SEATING
PLANE
END VIEW
c
RECOMMENDED
SOLDERING FOOTPRINT*
6X
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
GENERIC
MARKING DIAGRAM*
6
XXXMG
G
6X
0.30
INCHES
NOM MAX
−−− 0.043
−−− 0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
0.66
1
2.50
0.65
PITCH
XXX = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
*Date Code orientation and/or position may
vary depending upon manufacturing location.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
6. ANODE
STYLE 5:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 6:
PIN 1. ANODE 2
2. N/C
3. CATHODE 1
4. ANODE 1
5. N/C
6. CATHODE 2
STYLE 7:
PIN 1. SOURCE 2
2. DRAIN 2
3. GATE 1
4. SOURCE 1
5. DRAIN 1
6. GATE 2
STYLE 8:
CANCELLED
STYLE 9:
PIN 1. EMITTER 2
2. EMITTER 1
3. COLLECTOR 1
4. BASE 1
5. BASE 2
6. COLLECTOR 2
STYLE 10:
PIN 1. SOURCE 2
2. SOURCE 1
3. GATE 1
4. DRAIN 1
5. DRAIN 2
6. GATE 2
STYLE 11:
PIN 1. CATHODE 2
2. CATHODE 2
3. ANODE 1
4. CATHODE 1
5. CATHODE 1
6. ANODE 2
STYLE 12:
PIN 1. ANODE 2
2. ANODE 2
3. CATHODE 1
4. ANODE 1
5. ANODE 1
6. CATHODE 2
STYLE 13:
PIN 1. ANODE
2. N/C
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 14:
PIN 1. VREF
2. GND
3. GND
4. IOUT
5. VEN
6. VCC
STYLE 15:
PIN 1. ANODE 1
2. ANODE 2
3. ANODE 3
4. CATHODE 3
5. CATHODE 2
6. CATHODE 1
STYLE 16:
PIN 1. BASE 1
2. EMITTER 2
3. COLLECTOR 2
4. BASE 2
5. EMITTER 1
6. COLLECTOR 1
STYLE 17:
PIN 1. BASE 1
2. EMITTER 1
3. COLLECTOR 2
4. BASE 2
5. EMITTER 2
6. COLLECTOR 1
STYLE 18:
PIN 1. VIN1
2. VCC
3. VOUT2
4. VIN2
5. GND
6. VOUT1
STYLE 19:
PIN 1. I OUT
2. GND
3. GND
4. V CC
5. V EN
6. V REF
STYLE 20:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
STYLE 21:
PIN 1. ANODE 1
2. N/C
3. ANODE 2
4. CATHODE 2
5. N/C
6. CATHODE 1
STYLE 22:
PIN 1. D1 (i)
2. GND
3. D2 (i)
4. D2 (c)
5. VBUS
6. D1 (c)
STYLE 23:
PIN 1. Vn
2. CH1
3. Vp
4. N/C
5. CH2
6. N/C
STYLE 24:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
STYLE 25:
PIN 1. BASE 1
2. CATHODE
3. COLLECTOR 2
4. BASE 2
5. EMITTER
6. COLLECTOR 1
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
STYLE 27:
PIN 1. BASE 2
2. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. EMITTER 2
6. COLLECTOR 2
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
STYLE 29:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
STYLE 30:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UQFN10 1.4x1.8, 0.4P
CASE 488AT−01
ISSUE A
DATE 01 AUG 2007
1
SCALE 5:1
EDGE OF PACKAGE
D
ÉÉÉ
ÉÉÉ
ÉÉÉ
PIN 1 REFERENCE
2X
2X
A
0.10 C
L1
E
0.10 C
B
TOP VIEW
A1
0.05 C
A1
C
SIDE VIEW
3
9X
EXPOSED Cu
A
0.05 C
10X
DETAIL A
Bottom View
(Optional)
5
ÉÉÉ
ÉÉÉ
SEATING
PLANE
DETAIL B
Side View
(Optional)
6
e
1
10
10 X
L3
b
A3
DIM
A
A1
A3
b
D
E
e
L
L1
L3
MILLIMETERS
MIN
MAX
0.45
0.60
0.00
0.05
0.127 REF
0.15
0.25
1.40 BSC
1.80 BSC
0.40 BSC
0.30
0.50
0.00
0.15
0.40
0.60
GENERIC
MARKING DIAGRAM*
XXMG
G
e/2
L
MOLD CMPD
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.25 AND 0.30 MM
FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED PAD
AS WELL AS THE TERMINALS.
XX
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
0.10 C A B
0.05 C
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
NOTE 3
BOTTOM VIEW
MOUNTING FOOTPRINT
1.700
0.0669
0.663
0.0261
0.200
0.0079
9X
0.563
0.0221
1
2.100
0.0827
0.400
0.0157
PITCH
DOCUMENT NUMBER:
DESCRIPTION:
10 X
0.225
0.0089
SCALE 20:1
98AON22493D
mm Ǔ
ǒinches
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
10 PIN UQFN, 1.4 X 1.8, 0.4P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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