NCV33164

MC34164, MC33164, NCV33164 Micropower Undervoltage Sensing Circuits The MC34164 series are undervoltage sensing circuits specifically designed for use as reset controllers in portable microprocessor based systems where extended battery life is required. These devices offer the designer an economical solution for low voltage detection with a single external resistor. The MC34164 series features a bandgap reference, a comparator with precise thresholds and built−in hysteresis to prevent erratic reset operation, an open collector reset output capable of sinking in excess of 6.0 mA, and guaranteed operation down to 1.0 V input with extremely low standby current. The MC devices are packaged in 3−pin TO−92 (TO−226AA), micro size TSOP−5, 8−pin SOIC−8 and Micro8™ surface mount packages. The NCV device is packaged in SOIC−8. Applications include direct monitoring of the 3.0 V or 5.0 V MPU/logic power supply used in appliance, automotive, consumer, and industrial equipment. Features http://onsemi.com 3 STRAIGHT LEAD BULK PACK 12 1 3 BENT LEAD TAPE & REEL AMMO PACK 2 TO−92 (TO−226AA) P SUFFIX CASE 29 • • • • • • • • • • • Temperature Compensated Reference Monitors 3.0 V (MC34164−3) or 5.0 V (MC34164−5) Power Supplies Precise Comparator Thresholds Guaranteed Over Temperature Comparator Hysteresis Prevents Erratic Reset Reset Output Capable of Sinking in Excess of 6.0 mA Internal Clamp Diode for Discharging Delay Capacitor Guaranteed Reset Operation With 1.0 V Input Extremely Low Standby Current: As Low as 9.0 mA Economical TO−92 (TO−226AA), TSOP−5, SOIC−8 and Micro8 Surface Mount Packages NCV Prefix for Automotive and Other Applications Requiring Site and Control Changes Pb−Free Packages are Available Reset 5 1 TSOP−5 SN SUFFIX CASE 483 8 8 1 1 SOIC−8 D SUFFIX CASE 751 Micro8 DM SUFFIX CASE 846A PIN CONNECTIONS Reset 1 Input 2 N.C. 3 Ground 4 (Top View) 8 N.C. 7 N.C. 6 N.C. 5 N.C. Input TSOP−5 Pin 1. 2. 3. 4. 5. Ground Input Reset NC NC TO−92 Pin 1. Reset 2. Input 3. Ground ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. 1.2 Vref = Sink Only Positive True Logic DEVICE MARKING INFORMATION See general marking information in the device marking section on page 8 of this data sheet. GND Figure 1. Representative Block Diagram This device contains 28 active transistors. © Semiconductor Components Industries, LLC, 2009 April, 2009 − Rev. 18 1 Publication Order Number: MC34164/D MC34164, MC33164, NCV33164 MAXIMUM RATINGS Rating Power Input Supply Voltage Reset Output Voltage Reset Output Sink Current Clamp Diode Forward Current, Reset to Input Pin (Note 1) Power Dissipation and Thermal Characteristics P Suffix, Plastic Package Maximum Power Dissipation @ TA = 25°C Thermal Resistance, Junction−to−Air D Suffix, Plastic Package Maximum Power Dissipation @ TA = 25°C Thermal Resistance, Junction−to−Air DM Suffix, Plastic Package Maximum Power Dissipation @ TA = 25°C Thermal Resistance, Junction−to−Air Operating Junction Temperature Operating Ambient Temperature Range MC34164 Series MC33164 Series, NCV33164 Storage Temperature Range Electrostatic Discharge Sensitivity (ESD) Human Body Model (HBM) Machine Model (MM) Symbol Vin VO ISink IF Value −1.0 to 12 −1.0 to 12 Internally Limited 100 Unit V V mA mA PD RqJA PD RqJA PD RqJA TJ TA 700 178 700 178 520 240 +150 0 to +70 − 40 to +125 − 65 to +150 4000 200 mW °C/W mW °C/W mW °C/W °C °C Tstg ESD °C V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MC34164−3, MC33164−3 SERIES, NCV33164−3 ELECTRICAL CHARACTERISTICS (For typical values TA = 25°C, for min/max values TA is the operating ambient temperature range that applies [Notes 2 & 3], unless otherwise noted.) Characteristic COMPARATOR Threshold Voltage High State Output (Vin Increasing) Low State Output (Vin Decreasing) Hysteresis (ISink = 100 mA) RESET OUTPUT Output Sink Saturation (Vin = 2.4 V, ISink = 1.0 mA) (Vin = 1.0 V, ISink = 0.25 mA) Output Sink Current (Vin, Reset = 2.4 V) Output Off−State Leakage (Vin, Reset = 3.0 V) (Vin, Reset = 10 V) Clamp Diode Forward Voltage, Reset to Input Pin (IF = 5.0 mA) TOTAL DEVICE Operating Input Voltage Range Quiescent Input Current Vin = 3.0 V Vin = 6.0 V Vin Iin 1.0 to 10 − − − 9.0 24 − 15 40 V mA VOL − − 6.0 − − 0.6 0.14 0.1 12 0.02 0.02 0.9 0.4 0.3 30 0.5 1.0 1.2 V VIH VIL VH 2.55 2.55 0.03 2.71 2.65 0.06 2.80 2.80 − V Symbol Min Typ Max Unit ISink IR(leak) mA mA VF V 1. Maximum package power dissipation limits must be observed. 2. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible. Thigh = +70°C for MC34164 3. Tlow = 0°C for MC34164 = − 40°C for MC33164, NCV33164 = +125°C for MC33164, NCV33164 http://onsemi.com 2 MC34164, MC33164, NCV33164 MC34164−5, MC33164−5 SERIES, NCV33164−5 ELECTRICAL CHARACTERISTICS (For typical values TA = 25°C, for min/max values TA is the operating ambient temperature range that applies [Notes 5 & 6], unless otherwise noted.) Characteristic COMPARATOR Threshold Voltage High State Output (Vin Increasing) Low State Output (Vin Decreasing) Hysteresis (ISink = 100 mA) RESET OUTPUT Output Sink Saturation (Vin = 4.0 V, ISink = 1.0 mA) (Vin = 1.0 V, ISink = 0.25 mA) Output Sink Current (Vin, Reset = 4.0 V) Output Off−State Leakage (Vin, Reset = 5.0 V) (Vin, Reset = 10 V) Clamp Diode Forward Voltage, Reset to Input Pin (IF = 5.0 mA) TOTAL DEVICE Operating Input Voltage Range Quiescent Input Current Vin = 5.0 V Vin = 10 V Vin Iin 1.0 to 10 − − − 12 32 − 20 50 V mA VOL − − 7.0 − − 0.6 0.14 0.1 20 0.02 0.02 0.9 0.4 0.3 50 0.5 2.0 1.2 V VIH VIL VH 4.15 4.15 0.02 4.33 4.27 0.09 4.45 4.45 − V Symbol Min Typ Max Unit ISink IR(leak) mA mA VF V 4. Maximum package power dissipation limits must be observed. 5. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible. Thigh = +70°C for MC34164 6. Tlow = 0°C for MC34164 = − 40°C for MC33164, NCV33164 = +125°C for MC33164, NCV33164 7. NCV prefix is for automotive and other applications requiring site and change control. 10 RL = 82 k to Vin TA = 25°C 10 RL = 82 k to Vin TA = 25°C VO , OUTPUT VOLTAGE (V) VO , OUTPUT VOLTAGE (V) 4.0 6.0 8.0 10 8.0 6.0 4.0 2.0 0 0 8.0 6.0 4.0 2.0 0 2.0 0 2.0 4.0 6.0 8.0 10 Vin, INPUT VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 2. MC3X164−3 Reset Output Voltage versus Input Voltage Figure 3. MC3X164−5 Reset Output Voltage versus Input Voltage http://onsemi.com 3 MC34164, MC33164, NCV33164 5.0 V O , OUTPUT VOLTAGE (V) V O , OUTPUT VOLTAGE (V) 4.0 3.0 2.0 1.0 RL = 82 k to Vin TA = 25°C 0 2.62 2.66 2.70 2.74 2.78 0 4.22 4.26 5.0 4.0 3.0 2.0 1.0 RL = 82 k to Vin TA = 25°C 4.30 4.34 4.38 Vin, INPUT VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 4. MC3X164−3 Reset Output Voltage versus Input Voltage Figure 5. MC3X164−5 Reset Output Voltage versus Input Voltage 2.76 V in , THRESHOLD VOLTAGE (V) V in , THRESHOLD VOLTAGE (V) Upper Threshold High State Output 2.72 4.36 4.32 Upper Threshold High State Output 2.68 4.28 2.64 Lower Threshold Low State Output 4.24 Lower Threshold Low State Output 2.60 - 50 - 25 0 25 50 75 100 125 4.20 - 50 - 25 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 6. MC3X164−3 Comparator Threshold Voltage versus Temperature Figure 7. MC3X164−5 Comparator Threshold Voltage versus Temperature 50 40 30 20 10 0 TA = 0°C TA = 70°C TA = 25°C I in, INPUT CURRENT ( μA) 50 40 30 20 10 0 TA = 25°C I in, INPUT CURRENT ( μA) TA = 0°C TA = 70°C 0 2.0 4.0 6.0 8.0 10 0 2.0 4.0 6.0 8.0 10 Vin, INPUT VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 8. MC3X164−3 Input Current versus Input Voltage Figure 9. MC3X164−5 Input Current versus Input Voltage http://onsemi.com 4 MC34164, MC33164, NCV33164 4.0 V OL, OUTPUT SATURATION (V) V OL, OUTPUT SATURATION (V) Vin = 2.4 V 3.0 TA = 70°C TA = 25°C 2.0 TA = 25°C TA = 0°C 1.0 TA = 70°C 0 0 4.0 8.0 12 16 20 VSink, SINK CURRENT (mA) TA = 0°C 4.0 Vin, Reset = 4 V 3.0 TA = 25°C TA = 25°C TA = 70°C TA = 0°C 2.0 TA = 0°C 1.0 TA = 70°C 0 0 4.0 8.0 12 16 20 ISink, SINK CURRENT (mA) Figure 10. MC3X164−3 Reset Output Saturation versus Sink Current Figure 11. MC3X164−5 Reset Output Saturation versus Sink Current 32 I F , FORWARD CURRENT (mA) Reset 24 Vin = 0 V TA = 25°C 90% Vin 16 5.0 V 4.0 V Vin 43k Reset Vin = 5.0 V to 4.0 V RL = 43 k TA = 25°C 8.0 10 % 5.0V 4.0V Ref 0 0 0.4 0.8 VF , FORWARD VOLTAGE (V) 1.2 1.6 5.0 ms/DIV Figure 12. Clamp Diode Forward Current versus Voltage Figure 13. Reset Delay Time (MC3X164−5 Shown) Input Power Supply Reset R Reset CDLY Microprocessor Circuit 1.2 Vref tDLY = RCDLY In GND 1− 1 Vth(MPU) Vin A time delayed reset can be accomplished with the addition of CDLY. For systems with extremely fast power supply rise times (< 500 ns) it is recommended that the RCDLY time constant be greater than 5.0 ms. Vth(MPU) is the microprocessor reset input threshold. Figure 14. Low Voltage Microprocessor Reset http://onsemi.com 5 MC34164, MC33164, NCV33164 Test Data Vin RL Reset VH (mV) Microprocessor Circuit 60 103 123 160 155 199 280 262 306 357 421 530 DVth (mV) 0 1.0 1.0 1.0 2.2 2.2 2.2 4.7 4.7 4.7 4.7 4.7 RH (W) 0 100 100 100 220 220 220 470 470 470 470 470 RL (kW) 43 10 6.8 4.3 10 6.8 4.3 10 8.2 6.8 5.6 4.3 RH Iin Power Supply 1.2 Vref MC3X164-5 GND VH ≈ 4.3 RH RL + 0.06 DVth(lower) ≈ 10 RH x 10 - 6 where: RH ≤ 1.0 kW 43 kW ≥ RL ≥ 4.3 kW Comparator hysteresis can be increased with the addition of resistor RH. The hysteresis equation has been simplified and does not account for the change of input current Iin as Vin crosses the comparator threshold (Figure 8). An increase of the lower threshold DVth(lower) will be observed due to Iin which is typically 10 mA at 4.3 V. The equations are accurate to ±10% with RH less than 1.0 kW and RL between 4.3 kW and 43 kW. Figure 15. Low Voltage Microprocessor Reset With Additional Hysteresis (MC3X164−5 Shown) 1.0 k Input Power Supply Reset Input Reset Solar Cells 1.2 Vref 1.2 Vref GND GND Figure 16. Voltage Monitor Figure 17. Solar Powered Battery Charger VCC RL MTP3055EL 4.3V Input 270 Reset Overheating of the logic level power MOSFET due to insufficient gate voltage can be prevented with the above circuit. When the input signal is below the 4.3 V threshold of the MC3X164-5, its output grounds the gate of the L2 MOSFET. 1.2 Vref GND MC3X164-5 Figure 18. MOSFET Low Voltage Gate Drive Protection Using the MC3X164−5 http://onsemi.com 6 MC34164, MC33164, NCV33164 ORDERING INFORMATION Device MC33164D−3G MC33164D−3R2G NCV33164D−3R2* NCV33164D−3R2G* MC33164DM−3R2 MC33164DM−3R2G MC33164P−3G MC33164P−3RAG MC33164P−3RPG MC33164D−5G MC33164D−5R2 MC33164D−5R2G NCV33164D−5R2G* MC33164DM−5R2G MC33164P−5G MC33164P−5RAG MC33164P−5RPG MC34164D−3G MC34164D−3R2G MC34164DM−3R2G MC34164P−3G MC34164P−3RPG MC34164D−5G MC34164D−5R2G MC34164DM−5R2G MC34164SN−5T1G MC34164P−5G MC34164P−5RAG MC34164P−5RPG Package SOIC−8 (Pb−Free) SOIC−8 (Pb−Free) SOIC−8 SOIC−8 (Pb−Free) Micro8 Micro8 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) SOIC−8 (Pb−Free) SOIC−8 SOIC−8 (Pb−Free) SOIC−8 (Pb−Free) Micro8 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) SOIC−8 (Pb−Free) SOIC−8 (Pb−Free) Micro8 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) SOIC−8 (Pb−Free) SOIC−8 (Pb−Free) Micro8 (Pb−Free) TSOP−5 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) 4000 Units / Tape & Reel 2000 Units / Box 2000 Units / Tape & Reel 2000 Units / Pack 98 Units / Rail 2500 Units / Tape & Reel 4000 Units / Tape & Reel 2000 Units / Box 2000 Units / Pack 98 Units / Rail 2500 Units / Tape & Reel 4000 Units / Tape & Reel 3000 Units / Tape & Reel 2000 Units / Box 2000 Units / Tape & Reel 2000 Units / Pack 2500 Units / Tape & Reel 4000 Units / Tape & Reel 2000 Units / Box 2000 Units / Tape & Reel 2000 Units / Pack 98 Units / Rail 2500 Units / Tape & Reel Shipping† 98 Units / Rail *NCV33164: Tlow = −40°C, Thigh = +125°C. Guaranteed by design. NCV prefix is for automotive and other applications requiring site and change control. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 7 MC34164, MC33164, NCV33164 PIN CONNECTIONS AND MARKING DIAGRAMS TSOP−5 SN SUFFIX CASE 483 5 SRCAYWG G 1 1 8 3x164 ALYWy G 1 SRC x y A L Y W, WW G SOIC−8 D SUFFIX CASE 751 Micro8 MC33164DM CASE 846A 8 MIy0 AYWG G 1 = Device Code = Device Number 3 or 4 = Suffix Number 3 or 5 = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free 123 Micro8 MC34164DM CASE 846A 8 MCy0 AYWG G TO−92 MC3x164P−yRA MC3x164P−yRP MC3x164P−y CASE 29 MC3x1 64P−y YWW http://onsemi.com 8 MC34164, MC33164, NCV33164 PACKAGE DIMENSIONS TO−92 (TO−226AA) P SUFFIX CASE 29−11 ISSUE AM A R P L SEATING PLANE B STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- K XX H V 1 D G J C N N SECTION X−X DIM A B C D G H J K L N P R V R A B BENT LEAD TAPE & REEL AMMO PACK P T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- K G XX V 1 D J C N SECTION X−X DIM A B C D G J K N P R V http://onsemi.com 9 MC34164, MC33164, NCV33164 PACKAGE DIMENSIONS TSOP−5 SN SUFFIX CASE 483−02 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. DIM A B C D G H J K L M S MILLIMETERS MIN MAX 3.00 BSC 1.50 BSC 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 NOTE 5 2X D 5X 0.20 C A B M 0.10 T 0.20 T L A 5 1 2 4 3 2X B S K DETAIL Z G DETAIL Z C 0.05 H T SEATING PLANE J SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 mm inches SCALE 10:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 10 MC34164, MC33164, NCV33164 PACKAGE DIMENSIONS SOIC−8 D SUFFIX CASE 751−07 ISSUE AJ −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 A 8 5 B 1 S 4 0.25 (0.010) M Y M −Y− G K C −Z− H D 0.25 (0.010) M SEATING PLANE N X 45 _ 0.10 (0.004) M J ZY S X S DIM A B C D G H J K M N S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 11 MC34164, MC33164, NCV33164 PACKAGE DIMENSIONS Micro8 DM SUFFIX CASE 846A−02 ISSUE H D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. 846A-01 OBSOLETE, NEW STANDARD 846A-02. MILLIMETERS NOM MAX −− 1.10 0.08 0.15 0.33 0.40 0.18 0.23 3.00 3.10 3.00 3.10 0.65 BSC 0.40 0.55 0.70 4.75 4.90 5.05 MIN −− 0.05 0.25 0.13 2.90 2.90 INCHES NOM −− 0.003 0.013 0.007 0.118 0.118 0.026 BSC 0.016 0.021 0.187 0.193 MIN −− 0.002 0.010 0.005 0.114 0.114 HE E PIN 1 ID e b 8 PL 0.08 (0.003) M TB S A S −T− PLANE 0.038 (0.0015) A1 SEATING A c L DIM A A1 b c D E e L HE MAX 0.043 0.006 0.016 0.009 0.122 0.122 0.028 0.199 SOLDERING FOOTPRINT* 8X 1.04 0.041 0.38 0.015 8X 3.20 0.126 4.24 0.167 5.28 0.208 6X 0.65 0.0256 SCALE 8:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Micro8 is a trademark of International Rectifier. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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