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NCV5501DT33RKG

NCV5501DT33RKG

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO252

  • 描述:

    IC REG LINEAR 3.3V 500MA DPAK

  • 数据手册
  • 价格&库存
NCV5501DT33RKG 数据手册
NCP5500, NCV5500, NCP5501, NCV5501 LDO Voltage Regulator 500 mA These linear low drop voltage regulators provide up to 500 mA over a user−adjustable output range of 1.25 V to 5.0 V, or at a fixed output voltage of 1.5 V, 3.3 V or 5.0 V, with typical output voltage accuracy better than 3%. An internal PNP pass transistor permits low dropout voltage and operation at full load current at the minimum input voltage. NCV versions are qualified for demanding automotive applications that require extended temperature operation and site and change control. NCP5500 and NCV5500 versions include an Enable/Shutdown function and are available in a DPAK 5 and SOIC 8 packages. NCP5501 and NCV5501 versions are available in DPAK 3 for applications that do not require logical on/off control. This regulator family is ideal for applications that require a broad input voltage range, and low dropout performance up to 500 mA load using low cost ceramic capacitors. Integral protection features include short circuit current and thermal shutdown. Features • • • • • • • • • • • Output Current up to 500 mA 2.9% Output Voltage Accuracy Low Dropout Voltage (230 mV at 500 mA) Enable Control Pin (NCP5500 / NCV5500) Reverse Bias Protection Short Circuit Protection Thermal Shutdown Wide Operating Temperature Range NCV5500 / NCV5501; −40°C to +125°C Ambient Temperature NCP5500 / NCP5501; −40°C to +85°C Ambient Temperature NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable Stable with Low Cost Ceramic Capacitors These are Pb−Free Devices MARKING DIAGRAMS DPAK 5 CENTER LEAD CROP CASE 175AA 1 5 Pin 1. EN 2. Vin TAB,3. GND 4. Vout 5. NC/ADJ 4 1 2 3 Pin 1. Vin TAB,2. GND 3. Vout Automotive Industrial and Consumer Post SMPS Regulation Point of Use Regulation x5500yG ALYWW 1 DPAK 3 SINGLE GAUGE CASE 369C 5 x5501yG ALYWW 1 3 x = P (NCP), V (NCV) 5500/1 = Device Code y = Output Voltage = L = 1.5 V = T = 3.3 V = U = 5.0 V = W = Adjustable A = Assembly Location L = Wafer Lot Y = Year WW = Work Week G = Pb−Free Package 8 SOIC−8 CASE 751 8 1 Pin 1. Vin 2. GND 3. GND 4. Vout 5. NC/ADJ 6. GND 7. GND 8. EN Typical Applications • • • • http://onsemi.com 1 5500x ALYW G x = Output Voltage, NCP/NCV A = Adjustable, NCV B = Adjustable, NCP A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. © Semiconductor Components Industries, LLC, 2013 September, 2019 − Rev. 12 1 Publication Order Number: NCP5500/D NCP5500, NCV5500, NCP5501, NCV5501 NCP5500 NCV5500 NCP5501 NCV5501 Vout Vin Input Output Cin 10 mF Enable Cout 4.7 mF EN* OFF ON GND R1 * NC/ADJ* RL R2 * GND *Applicable to NCP5500/NCV5500 only. Figure 1. Typical Application Circuit PIN FUNCTION DESCRIPTIONS DPAK 3 DPAK 5 SOIC−8 Pin No. Pin No. Pin No. Pin Name − 1 8 EN Enable. This pin allows for on/off control of the regulator. High level turns on the output. To disable the device, connect to ground. If this function is not in use, connect to Vin. Positive power supply input voltage. Description 1 2 1 Vin 2, Tab 3, Tab 2, 3, 6, 7 GND Ground. This pin is internally connected to the Tab heat sink. 3 4 4 Vout Regulated output voltage. − 5 5 NC/ADJ No connection (Fixed output versions). Voltage−adjust input (Adjustable output version). Use an external voltage divider to set the output voltage over a range of 1.25 V to 5.0 V. Vin Vout Bandgap Reference Error Amplifier Current Limit and Saturation Sense − + Thermal Shutdown Connection for Fixed Output EN* Enable Block* GND Connection for Adjustable Output NC / ADJ* *Applicable to NCP5500/NCV5500 only. Figure 2. Block Diagram http://onsemi.com 2 NCP5500, NCV5500, NCP5501, NCV5501 ABSOLUTE MAXIMUM RATINGS Symbol Min Max Unit Input Voltage (Note 1) Rating Vin −0.3 (Note 2) +18 V Output, Enable Voltage Vout, EN −0.3 +16 or Vin + 0.3 (Notes 2 and 5) V Maximum Junction Temperature Storage Temperature Moisture Sensitivity Level All Packages TJ − 150 °C TStg −55 +150 °C MSL Lead Temperature Soldering Reflow (SMD Styles Only), Pb−Free Versions (Note 3) 1 Tsld − 265 Peak °C ESD Capability, Human Body Model (Note 4) ESDHBM 4000 − V ESD Capability, Machine Model (Note 4) ESDMM 200 − V ESD Capability, Charged Device Model (Note 4) ESDCDM 1000 − V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *Latchup Current Maximum Rating: ≤ 100 mA per JEDEC standard: JESD78. 1. Refer to Electrical Characteristics and Application Information for Safe Operating Area. 2. Reverse bias protection feature valid only if Vout − Vin v 7 V. 3. Pb−Free, 60 sec –150 sec above 217°C, 40 sec max at peak temperature 4. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115) ESD Charged Device Model tested per EIA/JES D22/C101, Field Induced Charge Model 5. Maximum = +16 V or (Vin + 0.3 V), whichever is lower. THERMAL CHARACTERISTICS Rating Symbol Max Unit PD Internally Limited W Thermal Characteristics, DPAK 3 and DPAK 5 (Note 1) Thermal Resistance, Junction−to−Air (Note 6) Thermal Resistance, Junction−to−Case RqJA RqJC 60 5.2 Thermal Characteristics, SOIC−8 (Note 1) Thermal Resistance, Junction−to−Air (Note 6) Thermal Reference, Junction−to−Lead RqJA RYJL 80 22 Package Dissipation Min °C/W °C/W 6. As measured using a copper heat spreading area of 650 mm2, 1 oz copper thickness. OPERATING RANGES Rating Symbol Min Max Unit Operating Input Voltage (Note 1) Vin Vout + VDO, 2.5 V (Note 7) 16 V Adjustable Output Voltage Range (Adjustable Version Only) Vout 1.25 5.0 V −40 −40 85 125 Operating Ambient Temperature Range NCP5500, NCP5501 NCV5500, NCV5501 TA 7. Minimum Vin = 2.5 V or (Vout + VDO), whichever is higher. http://onsemi.com 3 °C NCP5500, NCV5500, NCP5501, NCV5501 ELECTRICAL CHARACTERISTICS Vin = 2.5 V or Vout + 1.0 V (whichever is higher), Cin = 10 mF, Cout = 4.7 mF, for typical values TA = 25°C, for min/max values TA = −40°C to 85°C (NCP Version), TA = −40°C to 125°C (NCV Version) unless otherwise noted (Note 13). Characteristic Symbol Test Conditions Min Typ Max Unit OUTPUT Output Voltage (Note 14) 5 V Regulator 3.3 V Regulator 1.5 V Regulator ADJ Regulator Output Voltage (Note 8) 5 V Regulator 3.3 V Regulator 1.5 V Regulator ADJ Regulator VNOM±2.9% Vout V V V TA = 25°C, Iout = 50 mA (−4.9%) 4.755 3.138 1.427 1.189 VNOM 5.0 3.3 1.5 1.25 (+4.9%) 5.245 3.462 1.574 1.311 V V V Vout 1.0 mA < Iout < 500 mA Line Regulation REGLINE Iout = 50 mA 2.5 V or (Vout + 1.0 V) < Vin < 16 V −1.0 0.1 1.0 % Load Regulation REGLOAD 1.0 mA < Iout < 500 mA −1.0 0.35 1.0 % Iout = 1.0 mA, DVout = −2% Iout = 500 mA, DVout = −2% Iout = 1.0 mA, DVout = −2% Iout = 500 mA, DVout = −2% Iout = 1.0 mA, DVout = −2% Iout = 500 mA, DVout = −2% Iout = 1.0 mA, DVout = −2% Iout = 500 mA, DVout = −2% − − − − − − − − 5 230 5 230 − − 5 230 90 700 90 700 1073 1073 90 700 Dropout Voltage (Note 9) 5.0 V Version VDO 3.3 V Version 1.5 V Version (Note 10) Adjustable Version (Note 11) Ground Current mV IGND Iout = 100 mA Iout = 500 mA 300 10 500 20 mA mA ISD Adjustable and 1.5 V versions All other versions 30 40 50 50 mA Iout(LIM) Vout = 90% of Vout(nom) 500 700 900 mA Ripple Rejection Ratio (Notes 9 & 14) RR 120 Hz Iout = 100 mA, 1 kHz 10 kHz − − − 75 75 70 − − − dB Output Noise Voltage (Notes 12 & 14) Vn f = 10 Hz to 100 kHz, Vin = 2.5 V Vout = 1.25 V, Iout = 1.0 mA 18 f = 10 Hz to 100 kHz, Vin = 2.5 V Vout = 1.25 V, Iout = 100 mA 35 Disable Current in Shutdown (NCP5500, NCV5500) Current Limit mVrms ENABLE (NCP5500, NCV5500 Only) Enable Voltage Enable Pin Bias Current VENoff VENon OFF (shutdown) State ON (enabled) State IEN VEN = Vin, Iout = 1.0 mA IADJ VEN = Vin, VADJ = 1.25 V, Vout = 1.25 V TSD Iout = 100 mA 0.4 V − 1.0 mA − 60 nA − 210 °C 2.0 ADJUST Adjust Pin Current (Note 14) THERMAL SHUTDOWN Thermal Shutdown Temperature (Note 14) 150 8. Deviation from nominal. For adjustable versions, Pin ADJ connected to Vout. 9. See Typical Characteristics section for additional information. 10. VDO is constrained by the minimum input voltage of 2.5 V. 11. Vout is set by external resistor divider to 5 V. 12. Vn for other fixed voltage versions, as well as adjustable versions set to other output voltages, can be calculated from the following formula: Vn = Vn(x) * Vout / 1.25, where Vn(x) is the typical value from the table above. 13. Performance guaranteed over specified operating conditions by design, guard banded test limits, and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 14. Values are based on design and/or characterization. http://onsemi.com 4 NCP5500, NCV5500, NCP5501, NCV5501 TYPICAL CHARACTERISTICS 3.45 5.25 3.42 Vin = 13.2 V RL = 1 kW 5.15 Vout, OUTPUT VOLTAGE (V) Vout, OUTPUT VOLTAGE (V) 5.20 5.10 5.05 5.00 4.95 4.90 4.85 4.80 4.75 −40 Vout(nom) = 5 V 0 40 80 120 3.30 3.27 3.24 3.21 3.18 Vout(nom) = 3.3 V 0 40 80 120 TA, AMBIENT TEMPERATURE (°C) Figure 3. Output Voltage vs. Ambient Temperature Figure 4. Output Voltage vs. Ambient Temperature 1.30 1.29 Vin = 13.2 V RL = 1 kW 1.56 Vout, OUTPUT VOLTAGE (V) Vout, OUTPUT VOLTAGE (V) 3.33 TA, AMBIENT TEMPERATURE (°C) 1.54 1.52 1.50 1.48 1.46 1.44 1.42 −40 0 40 Vin = 13.2 V RL = 1 kW 1.28 1.27 1.26 1.25 1.24 1.23 1.22 Vout(nom) = 1.5 V 1.21 80 1.20 −40 120 Vout(nom) = 1.25 V (ADJ) 0 40 80 120 TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 5. Output Voltage vs. Ambient Temperature Figure 6. Output Voltage vs. Ambient Temperature 500 400 TA = 125°C 300 TA = 25°C TA = −40°C 200 100 Vout(nom) = 5 V 0 100 200 300 400 500 VDO DROPOUT VOLTAGE (mV) 500 VDO, DROPOUT VOLTAGE (mV) 3.36 3.15 −40 1.58 0 Vin = 13.2 V RL = 1 kW 3.39 450 400 350 TA = 25°C 250 200 150 TA = −40°C 100 50 0 600 TA = 125°C 300 Vout(nom) = 3.3 V 0 100 200 300 400 500 600 Iout, OUTPUT CURRENT (mA) Iout, OUTPUT CURRENT (mA) Figure 7. Dropout Voltage vs. Output Current Figure 8. Dropout Voltage vs. Output Current http://onsemi.com 5 NCP5500, NCV5500, NCP5501, NCV5501 TYPICAL CHARACTERISTICS 18 14 12 TA = 25°C 10 TA = 125°C 8 6 4 2 0 Vout(nom) = 5 V 0 100 200 300 400 500 600 TA = 25°C 10 8 TA = 125°C 6 4 2 Vout(nom) = 1.25 V (ADJ) 0 0 700 100 200 300 400 500 600 700 Figure 9. Ground Current vs. Output Current Figure 10. Ground Current vs. Output Current Vout(nom) = 5 V RL = 1 kW 3 2 1 0 1 2 3 4 5 6 Vout(nom) = 3.3 V RL = 1 kW 5 4 3 2 1 0 7 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 11. Ground Current vs. Input Voltage Figure 12. Ground Current vs. Input Voltage 6 RL = 1 kW 5 Vout(nom) = 1.5 V 4 3 2 1 0 1 2 3 4 5 6 IGND, GROUND CURRENT (mA) 6 IGND, GROUND CURRENT (mA) 12 Iout, OUTPUT CURRENT (mA) 4 0 TA = −40°C 14 6 5 0 16 Iout, OUTPUT CURRENT (mA) 6 IGND, GROUND CURRENT (mA) IGND, GROUND CURRENT (mA) TA = −40°C 16 IGND, GROUND CURRENT (mA) IGND, GROUND CURRENT (mA) 18 RL = 1 kW 5 Vout(nom) = 1.25 V (ADJ) 4 3 2 1 0 7 Vin, INPUT VOLTAGE (V) 0 3 4 5 Vin, INPUT VOLTAGE (V) Figure 13. Ground Current vs. Input Voltage Figure 14. Ground Current vs. Input Voltage http://onsemi.com 6 1 2 6 7 NCP5500, NCV5500, NCP5501, NCV5501 TYPICAL CHARACTERISTICS 90 1 mA 80 70 60 500 mA 50 40 100 mA 30 Vin = 6 V, DVin = 0.5 Vpp 20 10 0 RR, RIPPLE REJECTION (dB) RR, RIPPLE REJECTION (dB) 90 Vout(nom) = 1.5 V 0.01 0.1 1 10 100 500 mA 50 40 30 Vin = 6 V, DVin = 0.5 Vpp 20 10 Vout(nom) = 1.25 V (ADJ) 0.01 0.1 1 10 Figure 15. Ripple Rejection vs. Frequency Figure 16. Ripple Rejection vs. Frequency 100 12 11 10 9 7 8 6 Unstable Region ESR (W) ESR (W) 60 f, FREQUENCY (kHz) 8 5 4 3 50 100 150 200 Unstable Region 6 5 Stable Region 3 2 Cout = 1 mF to 10 mF Vout(nom) = 5 V 0 7 4 Stable Region 2 250 300 350 Cout = 1 mF to 10 mF Vout(nom) = 3.3 V 1 0 400 450 500 0 50 100 150 200 250 300 350 400 450 500 Iout, OUTPUT CURRENT (mA) Iout, OUTPUT CURRENT (mA) Figure 17. Output Capacitor ESR Stability vs. Output Current Figure 18. Output Capacitor ESR Stability vs. Output Current 10 10 9 9 8 8 7 7 Unstable Region 6 ESR (W) ESR (W) 100 mA f, FREQUENCY (kHz) 9 5 4 Unstable Region 6 5 4 3 3 Stable Region 2 1 0 1 mA 70 0 10 1 0 80 0 50 100 150 200 250 300 350 Stable Region 2 Cout = 1 mF to 10 mF Vout(nom) = 1.5 V 1 0 400 450 500 0 Iout, OUTPUT CURRENT (mA) 50 Cout = 1 mF to 10 mF Vout(nom) = 1.25 V (ADJ) 100 150 200 250 300 350 400 450 500 Iout, OUTPUT CURRENT (mA) Figure 19. Output Capacitor ESR Stability vs. Output Current Figure 20. Output Capacitor ESR Stability vs. Output Current NOTE: Typical characteristics were measured with the same conditions as electrical characteristics, unless otherwise noted. http://onsemi.com 7 NCP5500, NCV5500, NCP5501, NCV5501 NCP5500 Iin Input Cin 10 mF NCV5500 Vout Vin Cin2 100 nF Iout Cout Enable EN IEN Output GND ADJ IADJ RL IGND IQ NCP5501 Iin Input Cin 10 mF NCV5501 Vout Vin Cin2 100 nF Iout Output Cout RL GND IGND IQ Figure 21. Measuring Circuits Circuit Description linear regulator: startup delay, load transient response and loop stability. The capacitor value and type should be based on cost, availability, size and temperature constraints. Refer to Typical Operating Characteristics for stability regions. The NCP5500/NCP5501/NCV5500/NCV5501 are integrated linear regulators with a DC load current capability of 500 mA. The output voltage is regulated by a PNP pass transistor controlled by an error amplifier and band gap reference. The choice of a PNP pass element provides the lowest possible dropout voltage, particularly at reduced load currents. Pass transistor base drive current is controlled to prevent oversaturation. The regulator is internally protected by both current limit and thermal shutdown. Thermal shutdown occurs when the junction temperature exceeds 150°C. The NCV5500 includes an enable/shutdown pin to turn off the regulator to a low current drain standby state. Enable Input (NCP5500, NCV5500) The enable pin is used to turn the regulator on or off. By holding the pin at a voltage less than 0.4 V, the output of the regulator will be turned off to a minimal current drain state. When the voltage at the Enable pin is greater than 2.0 V, the output of the regulator will be enabled and rise to the regulated output voltage. The Enable pin may be connected directly to the input pin to provide a constant enable to the regulator. Active Load Protection in Shutdown (NCP5500, Regulator NCV5500) The error amplifier compares the reference voltage to a sample of the output voltage (Vout) and drives the base of a PNP series pass transistor via a buffer. The reference is a bandgap design for enhanced temperature stability. Saturation control of the PNP pass transistor is a function of the load current and input voltage. Oversaturation of the output power device is prevented, and quiescent current in the ground pin is minimized. When a linear regulator is disabled (shutdown), the output (load) voltage should be zero. However, stray PC board leakage paths, output capacitor dielectric absorption, and inductively coupled power sources can cause an undesirable regulator output voltage if load current is low or zero. The NCV5500 features a load protection network that is active only during Shutdown mode. This network switches in a shunt current path (~500 mA) from Vout to Ground. This feature also provides a controlled (“soft”) discharge path for the output capacitor after a transition from Enable to Shutdown. Regulator Stability Considerations The input capacitor is necessary to stabilize the input impedance to reduce transient line influences. The output capacitor helps determine three main characteristics of a http://onsemi.com 8 NCP5500, NCV5500, NCP5501, NCV5501 Ripple Rejection: The ratio of the peak−to−peak input ripple voltage to the peak−to−peak output ripple voltage. Current Limit: Peak current that can be delivered to the output. Calculating Resistors for the ADJ Versions The adjustable version uses feedback resistors to adjust the output to the desired output voltage. With Vout connected to ADJ, the adjustable version will regulate at 1.25 V 4.9% (1250  61.25 mV). Output voltage formula with an external resistor divider: V out + ǒ ƪ 1.25 V * 60E−9 @ (R 1 @ R 2) (R 1 ) R 2) ƫǓ ǒ @ (R1 ) R2) R2 Calculating Power Dissipation The maximum power dissipation for a single output regulator (Figure 21) is: Ǔ (eq. 1) P D(max) + ƪV in(max) * V out(min)ƫI out(max) ) V in(max)I GND Where R1 = value of the divider resistor connected between Vout and ADJ, R2 = value of the divider resistor connected between ADJ and GND, The term “1.25 V” has a tolerance of 4.9%; the term “60E−9” can vary in the range 15E−9 to 60E−9. For values of R2 less than 15 KW, the term within brackets ( [ ] ) will evaluate to less than 1 mV and can be ignored. This simplifies the output voltage formula to: Vout = 1.25 V * ((R1 + R2) / R2)) with a tolerance of 4.9%, which is the tolerance of the 1.25 V output when delivering up to 500 mA of output current. Where Vin(max) is the maximum input voltage, Vout(min) is the minimum output voltage, Iout(max) is the maximum output current for the application, IGND is the ground current at Iout(max). Once the value of PD(max) is known, the maximum permissible value of RqJA can be calculated: R qJA + ǒ150°C * T AǓ PD (eq. 2) The value of RqJA can then be compared with those in the Thermal Characteristics table. Those packages with RqJA less than the calculated value in Equation 2 will keep the die temperature below 150°C. In some cases, none of the packages will be sufficient to dissipate the heat generated by the IC, and an external heat sink will be required. DEFINITION OF TERMS Dropout Voltage: The input−to−output voltage differential at which the circuit ceases to regulate against further reduction input voltage. Measured when the output voltage has dropped 2% relative to the value measured at nominal input voltage. Dropout voltage is dependent upon load current and junction temperature. Input Voltage: The DC voltage applied to the input terminals with respect to ground. Line Regulation: The change in output voltage for a change in the input voltage. The measurement is made under conditions of low dissipation or by using pulse techniques such that the average chip temperature is not significantly affected. Load Regulation: The change in output voltage for a change in load current at constant chip temperature. Pulse loading techniques are employed such that the average chip temperature is not significantly affected. Quiescent and Ground Current: The quiescent current is the current which flows through the ground when the LDO operates without a load on its output: internal IC operation, bias, etc. When the LDO becomes loaded, this term is called the Ground current. It is actually the difference between the input current (measured through the LDO input pin) and the output current. Heat Sinks A heat sink effectively increases the surface area of the package to improve the flow of heat away from the IC and into the surrounding air. Each material in the heat flow path between the IC and the outside environment will have a thermal resistance. Like series electrical resistances, these resistances are summed to determine the value of RqJA: R qJA + R qJC ) R qCS ) R qSA (eq. 3) where RqJC is the junction−to−case thermal resistance, RqCS is the case−to−heatsink thermal resistance, RqSA is the heatsink−to−ambient thermal resistance. RqJC appears in the Thermal Characteristics table. Like RqJA, it too is a function of package type. RqCS and RqSA are functions of the package type, heat sink and the interface between them. These values appear in data sheets of heat sink manufacturers. Thermal, mounting, and heat sink considerations are further discussed in ON Semiconductor Application Note AN1040/D. http://onsemi.com 9 NCP5500, NCV5500, NCP5501, NCV5501 ORDERING INFORMATION Device Nominal Output Voltage* Package Marking Package Shipping† NCP5500DT15RKG P5500LG DPAK 5 (Pb−Free) 2500 / Tape & Reel NCV5500DT15RKG** V5500LG DPAK 5 (Pb−Free) 2500 / Tape & Reel NCP5501DT15RKG P5501LG DPAK 3 (Pb−Free) 2500 / Tape & Reel V5501LG DPAK 3 (Pb−Free) 2500 / Tape & Reel NCP5501DT15G P5501LG DPAK 3 (Pb−Free) 75 Units / Rail NCV5501DT15G** V5501LG DPAK 3 (Pb−Free) 75 Units / Rail NCP5500DT33RKG P5500TG DPAK 5 (Pb−Free) 2500 / Tape & Reel NCV5500DT33RKG** V5500TG DPAK 5 (Pb−Free) 2500 / Tape & Reel NCP5501DT33RKG P5501TG DPAK 3 (Pb−Free) 2500 / Tape & Reel V5501TG DPAK 3 (Pb−Free) 2500 / Tape & Reel NCP5501DT33G P5501TG DPAK 3 (Pb−Free) 75 Units / Rail NCV5501DT33G** V5501TG DPAK 3 (Pb−Free) 75 Units / Rail NCP5500DT50RKG P5500UG DPAK 5 (Pb−Free) 2500 / Tape & Reel NCV5500DT50RKG** V5500UG DPAK 5 (Pb−Free) 2500 / Tape & Reel NCP5501DT50RKG P5501UG DPAK 3 (Pb−Free) 2500 / Tape & Reel V5501UG DPAK 3 (Pb−Free) 2500 / Tape & Reel NCP5501DT50G P5501UG DPAK 3 (Pb−Free) 75 Units / Rail NCV5501DT50G** V5501UG DPAK 3 (Pb−Free) 75 Units / Rail NCP5500DTADJRKG P5500WG DPAK 5 (Pb−Free) 2500 / Tape & Reel V5500WG DPAK 5 (Pb−Free) 2500 / Tape & Reel 5500B SO−8 (Pb−Free) 2500 / Tape & Reel 5500A SO−8 (Pb−Free) 2500 / Tape & Reel NCV5501DT15RKG** NCV5501DT33RKG** NCV5501DT50RKG** NCV5500DTADJRKG** NCP5500DADJR2G NCV5500DADJR2G** 1.5 3.3 5.0 Adjustable Adjustable Adjustable †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Contact ON Semiconductor for other fixed voltages. **NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable http://onsemi.com 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK−5, CENTER LEAD CROP CASE 175AA ISSUE B DATE 15 MAY 2014 SCALE 1:1 −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R R1 Z A S 12 3 4 5 U K F J L H D G 5 PL 0.13 (0.005) M T 2.2 0.086 0.34 5.36 0.013 0.217 5.8 0.228 10.6 0.417 0.8 0.031 SCALE 4:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON12855D INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.020 0.028 0.018 0.023 0.024 0.032 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.045 BSC 0.170 0.190 0.185 0.210 0.025 0.040 0.020 −−− 0.035 0.050 0.155 0.170 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.51 0.71 0.46 0.58 0.61 0.81 4.56 BSC 0.87 1.01 0.46 0.58 2.60 2.89 1.14 BSC 4.32 4.83 4.70 5.33 0.63 1.01 0.51 −−− 0.89 1.27 3.93 4.32 GENERIC MARKING DIAGRAMS* RECOMMENDED SOLDERING FOOTPRINT* 6.4 0.252 DIM A B C D E F G H J K L R R1 S U V Z XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete XXXXXX A L Y WW G = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DPAK−5 CENTER LEAD CROP PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK 8 1 SCALE 1:1 −X− DATE 16 FEB 2011 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S 8 8 1 1 IC 4.0 0.155 XXXXX A L Y W G IC (Pb−Free) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package XXXXXX AYWW 1 1 Discrete XXXXXX AYWW G Discrete (Pb−Free) XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 1.270 0.050 SCALE 6:1 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 8 8 XXXXX ALYWX G XXXXX ALYWX 1.52 0.060 0.6 0.024 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 7.0 0.275 DIM A B C D G H J K M N S mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−8 NB CASE 751−07 ISSUE AK DATE 16 FEB 2011 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER STYLE 2: PIN 1. COLLECTOR, DIE, #1 2. COLLECTOR, #1 3. COLLECTOR, #2 4. COLLECTOR, #2 5. BASE, #2 6. EMITTER, #2 7. BASE, #1 8. EMITTER, #1 STYLE 3: PIN 1. DRAIN, DIE #1 2. DRAIN, #1 3. DRAIN, #2 4. DRAIN, #2 5. GATE, #2 6. SOURCE, #2 7. GATE, #1 8. SOURCE, #1 STYLE 4: PIN 1. ANODE 2. ANODE 3. ANODE 4. ANODE 5. ANODE 6. ANODE 7. ANODE 8. COMMON CATHODE STYLE 5: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. DRAIN 5. GATE 6. GATE 7. SOURCE 8. SOURCE STYLE 6: PIN 1. SOURCE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. GATE 7. GATE 8. SOURCE STYLE 7: PIN 1. INPUT 2. EXTERNAL BYPASS 3. THIRD STAGE SOURCE 4. GROUND 5. DRAIN 6. GATE 3 7. SECOND STAGE Vd 8. FIRST STAGE Vd STYLE 8: PIN 1. COLLECTOR, DIE #1 2. BASE, #1 3. BASE, #2 4. COLLECTOR, #2 5. COLLECTOR, #2 6. EMITTER, #2 7. EMITTER, #1 8. COLLECTOR, #1 STYLE 9: PIN 1. EMITTER, COMMON 2. COLLECTOR, DIE #1 3. COLLECTOR, DIE #2 4. EMITTER, COMMON 5. EMITTER, COMMON 6. BASE, DIE #2 7. BASE, DIE #1 8. EMITTER, COMMON STYLE 10: PIN 1. GROUND 2. BIAS 1 3. OUTPUT 4. GROUND 5. GROUND 6. BIAS 2 7. INPUT 8. GROUND STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 14: PIN 1. N−SOURCE 2. N−GATE 3. P−SOURCE 4. P−GATE 5. P−DRAIN 6. P−DRAIN 7. N−DRAIN 8. N−DRAIN STYLE 15: PIN 1. ANODE 1 2. ANODE 1 3. ANODE 1 4. ANODE 1 5. CATHODE, COMMON 6. CATHODE, COMMON 7. CATHODE, COMMON 8. CATHODE, COMMON STYLE 16: PIN 1. EMITTER, DIE #1 2. BASE, DIE #1 3. EMITTER, DIE #2 4. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE #1 8. COLLECTOR, DIE #1 STYLE 17: PIN 1. VCC 2. V2OUT 3. V1OUT 4. TXE 5. RXE 6. VEE 7. GND 8. ACC STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE STYLE 19: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. MIRROR 2 7. DRAIN 1 8. MIRROR 1 STYLE 20: PIN 1. SOURCE (N) 2. GATE (N) 3. SOURCE (P) 4. GATE (P) 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 21: PIN 1. CATHODE 1 2. CATHODE 2 3. CATHODE 3 4. CATHODE 4 5. CATHODE 5 6. COMMON ANODE 7. COMMON ANODE 8. CATHODE 6 STYLE 22: PIN 1. I/O LINE 1 2. COMMON CATHODE/VCC 3. COMMON CATHODE/VCC 4. I/O LINE 3 5. COMMON ANODE/GND 6. I/O LINE 4 7. I/O LINE 5 8. COMMON ANODE/GND STYLE 23: PIN 1. LINE 1 IN 2. COMMON ANODE/GND 3. COMMON ANODE/GND 4. LINE 2 IN 5. LINE 2 OUT 6. COMMON ANODE/GND 7. COMMON ANODE/GND 8. LINE 1 OUT STYLE 24: PIN 1. BASE 2. EMITTER 3. COLLECTOR/ANODE 4. COLLECTOR/ANODE 5. CATHODE 6. CATHODE 7. COLLECTOR/ANODE 8. COLLECTOR/ANODE STYLE 25: PIN 1. VIN 2. N/C 3. REXT 4. GND 5. IOUT 6. IOUT 7. IOUT 8. IOUT STYLE 26: PIN 1. GND 2. dv/dt 3. ENABLE 4. ILIMIT 5. SOURCE 6. SOURCE 7. SOURCE 8. VCC STYLE 29: PIN 1. BASE, DIE #1 2. EMITTER, #1 3. BASE, #2 4. EMITTER, #2 5. COLLECTOR, #2 6. COLLECTOR, #2 7. COLLECTOR, #1 8. COLLECTOR, #1 STYLE 30: PIN 1. DRAIN 1 2. DRAIN 1 3. GATE 2 4. SOURCE 2 5. SOURCE 1/DRAIN 2 6. SOURCE 1/DRAIN 2 7. SOURCE 1/DRAIN 2 8. GATE 1 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB STYLE 27: PIN 1. ILIMIT 2. OVLO 3. UVLO 4. INPUT+ 5. SOURCE 6. SOURCE 7. SOURCE 8. DRAIN STYLE 28: PIN 1. SW_TO_GND 2. DASIC_OFF 3. DASIC_SW_DET 4. GND 5. V_MON 6. VBULK 7. VBULK 8. VIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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NCV5501DT33RKG 价格&库存

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NCV5501DT33RKG
  •  国内价格 香港价格
  • 2500+2.886392500+0.34965
  • 5000+2.872915000+0.34802
  • 7500+2.872847500+0.34801
  • 10000+2.8727810000+0.34800
  • 12500+2.8727112500+0.34800

库存:15000

NCV5501DT33RKG
  •  国内价格 香港价格
  • 1+8.887361+1.07660
  • 10+7.9329210+0.96098
  • 25+7.5282025+0.91195
  • 100+5.78024100+0.70021
  • 250+5.10758250+0.61872
  • 500+4.83887500+0.58617
  • 1000+3.763601000+0.45592

库存:11865

NCV5501DT33RKG
  •  国内价格 香港价格
  • 2500+3.575422500+0.43312
  • 5000+3.441025000+0.41684
  • 12500+3.3334912500+0.40381
  • 25000+3.3270925000+0.40304

库存:11865

NCV5501DT33RKG
    •  国内价格
    • 1+6.79815
    • 10+5.25630
    • 50+4.73943
    • 100+3.94223
    • 200+3.79330
    • 500+3.73197
    • 1000+3.39032

    库存:2275

    NCV5501DT33RKG
    •  国内价格 香港价格
    • 2500+3.430652500+0.41558
    • 5000+3.324415000+0.40271
    • 7500+3.238147500+0.39226
    • 12500+3.1509712500+0.38170

    库存:2500