NCV7446MW0R2G

NCV7446MW0R2G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    VDFN14

  • 描述:

    NCV7446 是一个双通道 CAN FD 物理层收发器,允许与两个独立的 CAN 物理总线和两个独立的 CAN 协议控制器进行接口。

  • 数据手册
  • 价格&库存
NCV7446MW0R2G 数据手册
Dual CAN FD Transceiver, High Speed, Low Power NCV7446 Description NCV7446 is a dual CAN FD physical layer transceiver. It allows interfacing of two independent CAN physical buses and two independent CAN protocol controllers. The transceivers provide differential transmit capability to the bus and differential receive capability to the CAN controllers. It is consisted of two fully independent NCV7344 transceivers. The NCV7446 guarantees additional timing parameters to ensure robust communication at data rates beyond 1 Mbps to cope with CAN flexible data rate requirements (CAN FD). These features make the NCV7446 an excellent choice for all types of HS−CAN networks, in nodes that require a low−power mode with wake−up capability via the CAN bus. Features • • • • Quality • Wettable Flank Package for Enhanced Optical Inspection • AEC−Q100 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM NV74 46−0 ALYW G 1 DFNW14 CASE 507AC NV7446−0 = Specific Device Code A = Assembly Site L = Wafer Lot Y = Year of Production, Last Number W = Work Week Number G = Pb−Free Package PIN CONNECTIONS TxD1 1 14 STB1 GND1 2 13 CANH1 VCC1 3 12 CANL1 RxD1 4 11 STB2 TxD2 5 10 CANH2 GND2 6 9 CANL2 VCC2 7 8 RxD2 NCV7446 • • • • • • • Compliant with the ISO 11898−2:2016 CAN FD Timing Specified up to 5 Mbps Very Low Current Standby Mode with Wake−up via the Bus Low Electromagnetic Emission (EME) and High Electromagnetic Immunity No Disturbance of the Bus Lines with an Un−powered Node Transmit Data (TxD) Dominant Timeout Function Under All Supply Conditions the Chip Behaves Predictably Very High ESD Robustness of Bus Pins Thermal Protection Bus Pins Short Circuit Proof to Supply Voltage and Ground Bus Pins Protected Against Transients in an Automotive Environment www.onsemi.com ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet. Typical Applications • Automotive • Industrial Networks © Semiconductor Components Industries, LLC, 2018 December, 2019 − Rev. 2 1 Publication Order Number: NCV7446/D NCV7446 BLOCK DIAGRAM VCC1 3 NCV7446 V CC1 13 Thermal TxD1 shutdown 1 CANH1 Timer VCC 1 STB1 14 Mode & Wake − up 12 Driver control CANL1 control RxD1 GND1 4 Wake − up Filter COMP 2 COMP Channel 1 TxD2 5 GND2 6 V CC2 7 Channel2 Figure 1. NCV7446 Block Diagram www.onsemi.com 2 11 STB2 10 9 CANH 2 CANL2 8 RxD2 NCV7446 TYPICAL APPLICATION DIAGRAM VBAT IN 5V −reg OUT VCC VCC1 VCC2 3 STB1 TxD1 RxD1 . STB2 TxD2 RxD2 13 14 CANH1 CAN BUS 1 4 12 NCV7446 Micro− controller 7 11 10 CANL1 CANH2 CAN BUS 5 8 9 2 6 GND1 GND CANL2 GND2 Figure 2. NCV7446 Application Diagram Table 1. PIN FUNCTION DESCRIPTION Pin Number Pin Name 1 TxD1 Transmit data input for channel 1; low input Ù dominant driver; internal pull−up current Description 2 GND1 Ground for channel 1 3 VCC1 Supply voltage for channel 1 4 RxD1 Receive data output for channel 1; dominant transmitter Ù low output 5 TxD2 Transmit data input for channel 2; low input Ù dominant driver; internal pull−up current 6 GND2 Ground for channel 2 7 VCC2 Supply voltage for channel 2 8 RxD2 Receive data output for channel 2; dominant transmitter Ù low output 9 CANL2 Low−level CAN bus line channel 2 (low in dominant mode) 10 CANH2 High−level CAN bus line channel 2 (high in dominant mode) 11 STB2 Standby mode control input for channel 2; internal pull−up current 12 CANL1 Low−level CAN bus line channel 1 (low in dominant mode) 13 CANH1 High−level CAN bus line channel 1 (high in dominant mode) 14 STB1 EP Exposed Pad Standby mode control input for channel 1; internal pull−up current Recommended to connect to GND or left floating in application www.onsemi.com 3 NCV7446 FUNCTIONAL DESCRIPTION Operating Modes Standby Mode NCV7446 provides two modes of operation per transceiver as illustrated in Table 2. These modes are selectable through pins STB1 and STB2 independently for each transceiver. In standby mode both the transmitter and receiver are disabled and a very low−power differential receiver monitors the bus lines for CAN bus activity. The bus lines are biased to ground and supply current is reduced to a minimum. When a wake−up request is detected by the low−power differential receiver, the signal is first filtered and then verified as a valid wake signal after a time period of twake_filt, the corresponding RxDx pin is driven low by the transceiver (following the bus) to inform the controller of the wake−up request. Table 2. OPERATING MODES Pins STBx Mode Low Normal Low when bus dominant High when bus recessive High Standby Follows the bus when wake−up detected High when no wake−up request detected Pins RxDx Wake−up When a valid wake−up pattern (phase in order dominant − recessive − dominant) is detected during the standby mode the RxDx pins follows the bus. Minimum length of each phase is twake_filt – see Figure 3. Pattern must be received within twake_to to be recognized as valid wake−up otherwise internal logic is reset. Normal Mode In the normal mode, the selected transceiver is able to communicate via the bus lines. The signals are transmitted and received to the CAN controller via the pins TxDx and RxDx. The slopes on the bus lines outputs are optimized to give low EME. twake_filt twake_filt twake_filt CANHx CANLx < twake_to tdwakerd tdwakedr RxDx Figure 3. NCV7446 Wake−up behavior www.onsemi.com 4 NCV7446 Overtemperature Detection This TxD dominant timeout time tdom(TxD) defines the minimum possible bit rate to 17 kbps. A thermal protection circuit protects the IC from damage by switching off the affected transmitter if the junction temperature exceeds a value of approximately 170°C. Because the transmitter dissipates most of the power, the power dissipation and temperature of the IC is reduced. All other IC functions continue to operate. The transmitter off−state resets when the temperature decreases below the shutdown threshold and pins TxDx goes high. The thermal protection circuit is particularly needed when a bus line short circuits. Fail Safe Features A current−limiting circuit protects the transmitter output stage from damage caused by accidental short circuit to either positive or negative supply voltage, although power dissipation increases during this fault condition. Undervoltage on VCC1 or VCC2 pins prevents the chip sending data on the bus when there is not enough VCC supply voltage. After supply is recovered, corresponding TxD pin must be first released to high to allow sending dominant bits again. Recovery time from undervoltage detection is equal to td(stb−nm) time. The pins CANHx and CANLx are protected from automotive electrical transients (according to ISO 7637; see Figure 5). Pins TxDx and STBx are pulled high internally should the input become disconnected. Pins TxDx, STBx and RxDx will be floating, preventing reverse supply should the adjacent VCCx supply be removed. TxDx Dominant Timeout Function A TxD dominant timeout timer circuit prevents the bus lines being driven to a permanent dominant state (blocking all network communication) if pins TxDx are forced permanently low by a hardware and/or software application failure. The timer is triggered by a negative edge on pins TxDx. If the duration of the low−level on pins TxDx exceeds the internal timer value tdom(TxD), the transmitter is disabled, driving the bus into a recessive state. The timer is reset by a positive edge on pins TxDx. www.onsemi.com 5 NCV7446 ELECTRICAL CHARACTERISTICS Definitions All voltages are referenced to GNDx (pin 2 or pin 6). Positive currents flow into the IC. Sinking current means the current is flowing into the pin; sourcing current means the current is flowing out of the pin. Table 3. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Conditions Min Max Unit VSUP Supply voltage VCC1, VCC2 −0.3 +6 V VCANH DC voltage at pins CANHx 0 < VCCX < 5.25 V; no time limit −42 +42 V VCANL DC voltage at pins CANLx 0 < VCCX < 5.25 V; no time limit −42 +42 V DC voltage between any two pins (including CANHx and CANLx) −42 +42 V DC Voltage at pins TxDx, STBx −0.3 +6 V DC Voltage at pin RxDx −0.3 VCCx + 0.3 V VCANH−CANL VIN VOUT VesdHBM Electrostatic discharge voltage at all pins, Component HBM (Note 1) −8 +8 kV VesdCDM Electrostatic discharge voltage at all pins, Component CDM (Note 2) −750 +750 V VesdIEC Electrostatic discharge voltage at pins CANHx and CANLx, System HBM (Note 4) Without bus filter (Note 3) −7 +7 kV With bus filter (Note 3) −11 +11 kV Voltage transients, pins CANHx, CANLx. According to ISO7637−3, Class C (Note 4) test pulses 1 Vschaff −100 test pulses 2a +75 test pulses 3a Latch−up V Static latch−up at all pins −150 V V test pulses 3b +100 V (Note 5) 150 mA Tstg Storage temperature −55 +150 °C TJ Maximum junction temperature −40 +170 °C MSL Moisture Sensitivity Level 1 TSLD Lead temperature Soldering − Reflow (Note 11) − − 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Standardized human body model electrostatic discharge (ESD) pulses in accordance to EIA−JESD22. Equivalent to discharging a 100 pF capacitor through a 1.5 kW resistor. 2. Standardized charged device model ESD pulses when tested according to AEC−Q100−011. 3. System human body model electrostatic discharge (ESD) pulses in accordance to IEC 61000−4−2. Equivalent to discharging a 150 pF capacitor through a 330 W resistor referenced to GNDx. 4. Results were verified by external test house. 5. Static latch−up immunity: Static latch−up protection level when tested according to EIA/JESD78. 6. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D Table 4. THERMAL CHARACTERISTICS Symbol Parameter Conditions Value Unit RqJA_1 Thermal Resistance Junction−to−Air, JEDEC 1S0P PCB Free air; (Note 8) 101 K/W RqJA_2 Thermal Resistance Junction−to−Air, JEDEC 2S2P PCB Free air; (Note 9) 53 K/W RqJA_3 Thermal Resistance Junction−to−Air Free air; (Note 10) 76 K/W RqJA_4 Thermal Resistance Junction−to−Air Free air; (Note 11) 46 K/W 7. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. 8. Test board according to EIA/JEDEC Standard JESD51−3, signal layer with 10% trace coverage. 9. Test board according to EIA/JEDEC Standard JESD51−7, signal layers with 10% trace coverage. 10. Test board according to EIA/JEDEC Standard JESD51−3 and JESD51−5 , signal layer with 10% trace coverage and with thermal via array under the exposed pad connected to the second copper layer. 11. Test board according to EIA/JEDEC Standard JESD51−5 and JESD51−7, signal layers with 10% trace coverage and thermal via array under the exposed pad connected to the first inner copper layer. www.onsemi.com 6 NCV7446 Table 5. ELECTRICAL CHARACTERISTICS VCC1, VCC2 = 4.75 V to 5.25 V; TJ = −40°C to +150°C; RLT = 60 W, CLT = 100 pF, C1 not used, CRxD = 15 pF, unless specified otherwise. Symbol Parameter Conditions Min Typ Max Unit 4.75 5.0 5.25 V 55 mA SUPPLY (PINS VCCX) VCCx Power supply voltage (Note 12) ICCx Supply current on single channel Dominant; VTxDx = Low 20 45 Recessive; VTxDx = Low 1.9 5.0 10 mA Normal mode, Dominant; VTxDx = 0 V; one of bus wires shorted; −3 V ≤ (VCANHx, VCANLx) ≤ +18 V 2.0 − 105 mA − 10 15 mA ICCSx Supply current in standby mode on single channel TJ ≤ 100°C, (Note 13) VUVD(VCC)(stby) Standby undervoltage detection VCCx pins 3.5 4.0 4.3 V VUVD(VCC)(swoff) Switch−off undervoltage detection VCCx pins 2.0 2.3 2.6 V TRANSMITTER DATA INPUT (Pins TxDx) VIH High−level input voltage Output recessive 2.0 − − V VIL Low−level input voltage Output dominant − − +0.8 V IIH High−level input current VTxDx = VCCx −5.0 0 +5.0 mA IIL Low−level input current VTxDx = 0 V −300 −150 −70 mA Ci Input capacitance (Note 13) − 5 10 pF 2.0 − − V TRANSMITTER MODE SELECT (Pins STBx) VIH High−level input voltage Standby mode VIL Low−level input voltage Normal mode − − +0.8 V IIH High−level input current VSTBx = VCCx −1.0 0 +1.0 mA IIL Low−level input current VSTBx = 0 V −15 − −1.0 mA Ci Input capacitance (Note 13) − 5 10 pF RECEIVER DATA OUTPUT (Pins RxDx) IOH High−level output current Normal mode VRxDx = VCCx – 0.4 V −8.0 −3.0 −1.0 mA IOL Low−level output current VRxDx = 0.4 V 1.0 6.0 12 mA Recessive output current at pins CANHx and CANLx −27 V < VCANHx, VCANLx < +32 V; Normal mode −5.0 − +5.0 mA Input leakage current 0 W < R(VCCx to GNDx) < 1 MW; VCANLx = VCANHx = 5 V −5.0 0 +5.0 mA Vo(rec)(CANH) Recessive output voltage at pins CANHx Normal mode, VTxDx = High; RLT and CLT not used 2.0 2.5 3.0 V Vo(rec)(CANL) Recessive output voltage at pins CANLx Normal mode, VTxDx = High; RLT and CLT not used 2.0 2.5 3.0 V Vo(off)(CANH) Recessive output voltage at pin CANHx Standby mode; RLT and CLT not used −0.1 − +0.1 V Vo(off)(CANL) Recessive output voltage at pin CANLx Standby mode; RLT and CLT not used −0.1 − +0.1 V Vo(off)(CANL) Differential bus output voltage (VCANHx * VCANLx) Standby mode; RLT and CLT not used −0.2 − +0.2 V Vo(dom)(CANH) Dominant output voltage at pins CANHx VTxDx = 0 V; t < tdom(TxD); 50 W < RLT < 65 W 2.75 3.5 4.5 V Vo(dom)(CANL) Dominant output voltage at pins CANLx VTxDx = 0 V; t < tdom(TxD); 50 W < RLT < 65 W 0.5 1.5 2.25 V BUS LINES (Pins CANHx and CANLx) Io(rec) ILI www.onsemi.com 7 NCV7446 Table 5. ELECTRICAL CHARACTERISTICS VCC1, VCC2 = 4.75 V to 5.25 V; TJ = −40°C to +150°C; RLT = 60 W, CLT = 100 pF, C1 not used, CRxD = 15 pF, unless specified otherwise. Symbol Parameter Conditions Min Typ Max Unit BUS LINES (Pins CANHx and CANLx) Vo(dom)(diff) Differential bus output voltage (VCANHx − VCANLx) VTxDx = 0 V; dominant; 45 W < RLT < 65 W 1.5 2.25 3.0 V Vo(rec)(diff) Differential bus output voltage (VCANHx − VCANLx) VTxDx = High; recessive; no load −50 0 +50 mV Differential bus output voltage during arbitration (VCANHx − VCANLx) RLT = 2.24kW (Note 13) 1.5 − 5.0 V Vo(dom)(sym) Dominant output voltage driver symmetry (VCANHx + VCANLx) RLT = 60W; C1 = 4.7 nF; CLT not used; TxDx = square wave up to 1 MHz 0.9 1.0 1.1 VCCx Io(sc)(CANH) Short circuit output current at pins CANHx −3 V < VCANHx < +18 V −100 − 1.5 mA Io(sc)(CANL) Short circuit output current at pins CANLx −3 V < VCANLx < +36 V −1.5 − 100 mA Vi(rec)(diff)_NM Differential input voltage range recessive state Normal mode; −12 V ≤ VCANHx, VCANLx ≤ +12 V; no load −3.0 − 0.5 V Standby mode; −12 V ≤ VCANHx, VCANLx ≤ +12 V; no load −3.0 0.4 V Normal mode; −12 V ≤ VCANHx, VCANLx ≤ +12 V; no load 0.9 8.0 V Standby mode; −12 V ≤ VCANHx, VCANLx ≤ +12 V; no load 1.05 8.0 V Vo(dom)(diff)_arb Vi(rec)(diff)_LP Vi(dom)(diff)_NM Differential input voltage range dominant state Vi(dom)(diff)_LP − Vi(diff)(th)_NORM Differential receiver threshold voltage in normal mode −12 V ≤ VCANLx ≤ +12 V; −12 V ≤ VCANHx ≤ +12 V 0.5 − 0.9 V Vi(diff)(th)_NORM_H Differential receiver threshold voltage in normal mode, extended range −30 V < VCANLx < +35 V; −30 V < VCANHx < +35 V 0.4 − 1.0 V Vi(diff)(th)_STDBY Differential receiver threshold voltage in standby mode −12 V ≤ VCANLx ≤ +12 V; −12 V ≤ VCANHx ≤ +12 V 0.4 − 1.05 V Ri(cm)(CANH) Common−mode input resistance at pin CANHx −2 V ≤ VCANLx ≤ +7 V; −2 V ≤ VCANHx ≤ +7 V 15 26 37 kW Ri(cm)(CANL) Common−mode input resistance at pin CANLx −2 V ≤ VCANLx ≤ +7 V; −2 V ≤ VCANHx ≤ +7 V 15 26 37 kW Ri(cm)(m) Matching between pin CANHx and pin CANLx common mode input resistance VCANHx = VCANLx = +5 V −1 0 +1 % Differential input resistance −2 V ≤ VCANLx ≤ +7 V; −2 V ≤ VCANHx ≤ +7 V 25 50 75 kW Ci(CANH) Input capacitance at pins CANHx VTxDx = High; (Note 13) − 4.5 20 pF Ci(CANL) Input capacitance at pins CANLx VTxDx = High; (Note 13) − 4.5 20 pF Differential input capacitance VTxDx = High; (Note 13) − 3.75 10 pF 160 180 200 °C Ri(diff) Ci(diff) THERMAL SHUTDOWN TJ(sd) Shutdown junction temperature per channel Junction temperature rising TIMING CHARACTERISTICS (see Figure 4 and Figure 6) td(TxD−BUSon) Delay TxDx to bus active − 75 − ns td(TxD−BUSoff) Delay TxDx to bus inactive − 85 − ns td(BUSon−RxD) Delay bus active to RxDx − 24 − ns td(BUSoff−RxD) Delay bus inactive to RxDx − 32 − ns Propagation delay TxDx to RxDx dominant to recessive transition 50 100 210 ns tpd_dr www.onsemi.com 8 NCV7446 Table 5. ELECTRICAL CHARACTERISTICS VCC1, VCC2 = 4.75 V to 5.25 V; TJ = −40°C to +150°C; RLT = 60 W, CLT = 100 pF, C1 not used, CRxD = 15 pF, unless specified otherwise. Symbol Parameter Conditions Min Typ Max Unit Propagation delay TxDx to RxDx recessive to dominant transition 50 120 210 ns td(stb−nm) Delay standby mode to normal mode 5.0 11 20 ms twake_filt Dominant time for wake−up via bus 0.5 − 5.0 ms tdwakerd Delay to flag wake event (recessive to dominant transitions) Valid bus wake−up event 0.5 2.6 6.0 ms tdwakedr Delay to flag wake event (dominant to recessive transitions) Valid bus wake−up event 0.5 2.6 6.0 ms twake_to Bus time for wake−up timeout Standby mode 1.0 − 10 ms tdom(TxD) TxDx dominant time for timeout VTxDx = 0 V; Normal mode 1.0 − 10 ms tBit(RxD) Bit time on RxDx pin tBit(TxD) = 500 ns 400 − 550 ns tBit(TxD) = 200 ns 120 − 220 ns tBit(TxD) = 500 ns 435 − 530 ns tBit(TxD) = 200 ns 155 − 210 ns tBit(TxD) = 500 ns −65 − +40 ns tBit(TxD) = 200 ns −45 − +15 ns TIMING CHARACTERISTICS (see Figure 4 and Figure 6) tpd_rd tBit(Vi(diff)) DtRec Bit time on bus (CANHx – CANLx pin) Receiver timing symmetry DtRec = tBit(RxD) − tBit(Vi(diff)); 12. In the range of 4.5 V to 4.75 V and from 5.25 V to 5.5 V the chip is fully functional; some parameters may be outside of the specification. 13. Values based on design and characterization, not tested in production. MEASUREMENT SETUPS AND DEFINITIONS 0.7 × VIO TxDx1 0.3 × VIO 0.3 × VIO tbit(TxD) td(TxD−BUSon) 5 × tbit(TxD) Vi(diff)= VCANHx −VCANLx tpd_rd td(BUSon−RxD) 900 mV 500 mV tbit(Vi(diff)) td(TxD−BUSoff) td(BUSoff−RxD) tpd_dr 0.7 × VIO RxDx 0.3 × VIO 1 TxDx Edge length below 10 ns Figure 4. Transceiver Timing Diagram www.onsemi.com 9 tbit(RxD) NCV7446 +5 V 100 nF VCC1 VCC2 3 TxD1 TxD2 RxD1 5 CANH1 1 nF 13 1 Transient Generator 5 4 NCV7446 1 nF 12 15 pF CANL1 CANH2 1 nF 10 RxD2 Transient Generator 8 15 pF 1 nF 9 14 11 2 CANL2 6 STB1 STB2 GND1 GND2 Figure 5. Test Circuit for Automotive Transients +5 V 100 nF VCC1 V CC2 3 TxD 1 TxD2 RxD1 5 13 R LT /2 4.7 nF 1 5 4 NCV 7446 15 pF C1 R LT /2 12 10 RxD 2 CANH 1 CANL 1 CANH2 8 9 14 11 2 6 C1 R LT /2 CANL 2 2x 30 W STB1 STB2 GND 1 GND2 Figure 6. Test Circuit for Timing Characteristics www.onsemi.com 10 100 pF 2x 30 W R LT /2 4.7 nF 15 pF C LT C LT 100 pF NCV7446 Table 6. ISO 11898−2:2016 PARAMETER CROSS−REFERENCE TABLE ISO 11898−2:2016 Specification Parameter NCV7446 Datasheet Notation Symbol Single ended voltage on CAN_H VCAN_H Vo(dom)(CANH) Single ended voltage on CAN_L Dominant output characteristics VCAN_L Vo(dom)(CANL) Differential voltage on normal bus load VDiff Vo(dom)(diff) Differential voltage on effective resistance during arbitration VDiff Vo(dom)(diff)_arb Differential voltage on extended bus load range (optional) VDiff Vo(dom)(diff) VSYM Vo(dom)(sym) Absolute current on CAN_H ICAN_H Io(SC)(CANH) Absolute current on CAN_L ICAN_L Io(SC)(CANL) Single ended output voltage on CAN_H VCAN_H Vo(rec)(CANH) Single ended output voltage on CAN_L VCAN_L Vo(rec)(CANL) VDiff Vo(rec)(diff) Single ended output voltage on CAN_H VCAN_H Vo(off)(CANH) Single ended output voltage on CAN_L VCAN_L Vo(off)(CANL) VDiff Vo(off)(dif) Transmit dominant timeout, long tdom tdom(TxD) Transmit dominant timeout, short tdom NA Recessive state differential input voltage range VDiff Vi(rec)(diff)_NM Dominant state differential input voltage range VDiff Vi(dom)(diff)_NM Driver symmetry Driver symmetry Driver output current Receiver output characteristics, bus biasing active Differential output voltage Receiver output characteristics, bus biasing inactive Differential output voltage Optional transmit dominant timeout Static receiver input characteristics, bus biasing active Static receiver input characteristics, bus biasing inactive Recessive state differential input voltage range VDiff Vi(rec)(diff)_LP Dominant state differential input voltage range VDiff Vi(dom)(diff)_LP RDiff Ri(diff) RCAN_H RCAN_L Ri(cm)(CANH) Ri(cm)(CANL) mR Ri(cm)(m) tLoop tpd_rd tpd_dr Receiver input resistance Differential internal resistance Single ended internal resistance Receiver input resistance matching Matching a of internal resistance Implementation loop delay requirement Loop delay Optional implementation data signal timing requirements for use with bit rates above 1 Mbit/s and up to 2 Mbit/s Transmitted recessive bit width @ 2 Mbit/s tBit(Bus) tBit(Vi(diff)) Received recessive bit width @ 2 Mbit/s tBit(RXD) tBit(RxD) DtRec DtRec Receiver timing symmetry @ 2 Mbit/s www.onsemi.com 11 NCV7446 Table 6. ISO 11898−2:2016 PARAMETER CROSS−REFERENCE TABLE ISO 11898−2:2016 Specification Parameter NCV7446 Datasheet Notation Symbol Optional implementation data signal timing requirements for use with bit rates above 2 Mbit/s and up to 5 Mbit/s Transmitted recessive bit width @ 5 Mbit/s tBit(Bus) tBit(Vi(diff)) Transmitted recessive bit width @ 5 Mbit/s tBit(RXD) tBit(RxD) DtRec DtRec VDiff VCANH−CANL General maximum rating VCAN_H and VCAN_L VCAN_H VCAN_L VCANH VCANL Optional: Extended maximum rating VCAN_H and VCAN_L VCAN_H VCAN_L NA ICAN_H ICAN_L ILI CAN activity filter time, long tFilter twake_filt CAN activity filter time, short tFilter NA Wake−up timeout, short tWake NA Wake−up timeout, long tWake twake_to tSilence NA tBias NA Received recessive bit width @ 5 Mbit/s Maximum ratings of VCAN_H, VCAN_L and VDiff Maximum rating VDiff Maximum leakage currents on CAN_H and CAN_L, unpowered Leakage current on CAN_H, CAN_L Bus biasing control timings Timeout for bus inactivity (Required for selective wake−up implementation only) Bus Bias reaction time (Required for selective wake−up implementation only) ORDERING INFORMATION Device Description Package Shipping† NCV7446MW0R2G Dual CAN FD Transceiver, High Speed, Low Power DFNW14 (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 12 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFNW14 4.5x3, 0.65P CASE 507AC ISSUE D 1 DATE 03 JUL 2018 SCALE 2:1 L ÇÇÇÇ ÇÇÇÇ PIN ONE REFERENCE L3 A B D L3 L ALTERNATE CONSTRUCTION E DETAIL A EXPOSED COPPER TOP VIEW A DETAIL B 0.10 C 0.08 C NOTE 4 PLATING A1 A4 C C DETAIL B A3 SIDE VIEW SEATING PLANE C A4 DETAIL A D2 14X 1 L 7 PLATED SURFACES L3 SECTION C−C NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMESNION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. THIS DEVICE CONTAINS WETTABLE FLANK DESIGN FEATURES TO AID IN FILLET FORMATION ON THE LEADS DURING MOUNTING. DIM A A1 A3 A4 b D D2 E E2 e K L L3 MILLIMETERS MIN NOM MAX 0.80 0.85 0.90 −−− −−− 0.05 0.20 REF 0.10 −−− −−− 0.25 0.30 0.35 4.40 4.50 4.60 4.13 4.20 4.27 2.90 3.00 3.10 1.53 1.60 1.67 0.65 BSC 0.30 REF 0.35 0.40 0.45 0.00 0.05 0.10 GENERIC MARKING DIAGRAM* E2 K 8 14 14X e BOTTOM VIEW b 0.10 M C A B 0.05 M C NOTE 3 RECOMMENDED SOLDERING FOOTPRINT* 14X 4.35 4.23 14 0.75 8 3.60 1.75 1 7 0.65 PITCH XXXXX XXXXX AYWWG G XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (*Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. PACKAGE OUTLINE 14X 0.33 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14979G DFNW14 4.5x3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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NCV7446MW0R2G 价格&库存

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NCV7446MW0R2G

    库存:0

    NCV7446MW0R2G

      库存:0

      NCV7446MW0R2G

        库存:322

        NCV7446MW0R2G
        •  国内价格 香港价格
        • 1+19.214361+2.49305
        • 10+14.2110310+1.84387
        • 25+12.9520025+1.68051
        • 100+11.56780100+1.50092
        • 250+10.90854250+1.41538
        • 500+10.54838500+1.36865

        库存:1043

        NCV7446MW0R2G
        •  国内价格 香港价格
        • 5000+9.349995000+1.21316

        库存:1043